Abstract: A display apparatus is discussed, which comprises a substrate including a display area and a non-display area, an inorganic layer provided on the substrate, an organic layer provided on the inorganic layer, a light emitting diode provided in the display area of the substrate and including a first electrode, a light emitting layer and a second electrode, and a ground line provided on the organic layer and provided in at least a portion of the non-display area, wherein the ground line and the second electrode are electrically connected with each other, and the ground line includes at least one concave portion and at least one convex portion, which are arranged to adjoin each other.

Abstract: Provided is a thin film transistor including a highly-textured dielectric layer, an active layer, a gate electrode and a source/drain electrode that are stacked on a base substrate. The source/drain electrode includes a source electrode and a drain electrode. The gate electrode and the active layer are insulated from each other. The source electrode and the drain electrode are electrically connected to the active layer. Constituent particles of the active layer are of monocrystalline silicon-like structures. According to the present disclosure, the highly-textured dielectric layer is adopted to replace an original buffer layer to induce the active layer to grow into a monocrystalline silicon-like structure, such that the performance of the thin film transistor is improved.

Abstract: A display device includes a display area configured to include a plurality of pixels and a plurality of data lines connected to the pixels. A hole area is disposed within the display area. A hole crack detection line is disposed adjacent to the hole area and surrounds the hole area. The device includes first and second detection lines which include first and second detection transfer lines and first and second detection receiving lines, respectively. A test controller electrically connects the first detection receiving line to a first data line and the second detection receiving line to a second data line. Pixels connected to the first data line that is connected to a first bright-line transistor and pixels connected to the second data line that is connected to a second bright-line transistor are configured to emit light when a crack occurs in the hole crack detection line.

Abstract: A display apparatus includes a substrate; a pixel driving circuit on the substrate; and a display unit connected with the pixel driving circuit, wherein the pixel driving circuit includes a first thin film transistor and a second thin film transistor, wherein the first thin film transistor includes, a first gate electrode on the substrate, a first active layer spaced apart from the first gate electrode and overlapping at least a part of the first gate electrode, a first source electrode connected with the first active layer; and a first drain electrode spaced apart from the first source electrode and connected with the first active layer, and wherein the second thin film transistor includes, a second active layer on the substrate, and a second gate electrode spaced apart from the second active layer and partially overlapping at least a part of the second active layer, wherein the first gate electrode is disposed between the substrate and the first active layer, the second active layer is disposed between the

Abstract: An object is to prevent an operation defect and to reduce an influence of fluctuation in threshold voltage of a field-effect transistor. A field-effect transistor, a switch, and a capacitor are provided. The field-effect transistor includes a first gate and a second gate which overlap with each other with a channel formation region therebetween, and the threshold voltage of the field-effect transistor varies depending on the potential of the second gate. The switch has a function of determining whether electrical connection between one of a source and a drain of the field-effect transistor and the second gate of the field-effect transistor is established. The capacitor has a function of holding a voltage between the second gate of the field-effect transistor and the other of the source and the drain of the field-effect transistor.

Abstract: According to one embodiment, a display device includes a display panel and a drive circuit. A transistor provided in a pixel portion or a peripheral portion of the display panel includes a semiconductor layer having a first end and a second end, first and second gate electrodes overlapping the semiconductor layer, a source electrode connected to the first end, and a drain electrode connected to the second end. The first and second gate electrodes are disposed in a first layer. The source electrode and the drain electrode are disposed in a second layer. The source electrode is formed to cover at least a first channel region in planar view. The drain electrode is formed to cover at least a second channel region in planar view.

Abstract: A display device includes a light emitting element including an anode, a cathode, and a light emitting layer between the anode and the cathode, a first transistor connected between the anode and a first power line, the first transistor may be switched by a voltage of a node, a second transistor connected between the first transistor and a data line, the second transistor may be switched by a write scan signal, a third transistor connected between the node and the anode, the third transistor may be switched by a compensation scan signal, a fourth transistor connected between the node and an initialization line, the fourth transistor may be switched by an initialization scan signal, an insulating layer on the first to the fourth transistors, and a light blocking pattern protruding from the insulating layer, the light blocking pattern being adjacent to the third transistor and the fourth transistor.

Abstract: A semiconductor device is manufactured using a transistor in which an oxide semiconductor is included in a channel region and variation in electric characteristics due to a short-channel effect is less likely to be caused. The semiconductor device includes an oxide semiconductor film having a pair of oxynitride semiconductor regions including nitrogen and an oxide semiconductor region sandwiched between the pair of oxynitride semiconductor regions, a gate insulating film, and a gate electrode provided over the oxide semiconductor region with the gate insulating film positioned therebetween. Here, the pair of oxynitride semiconductor regions serves as a source region and a drain region of the transistor, and the oxide semiconductor region serves as the channel region of the transistor.

Abstract: A display device includes a display panel which includes a display area and a non-display area, a plurality of signal wirings arranged in the display area, a plurality of fanout wirings arranged in the non-display area and electrically connected to the signal wirings, and a plurality of connecting wirings connecting the signal wirings to the fanout wirings, where some of the plurality of fanout wirings intersect and are overlapped with each other in a plan view.

Abstract: Provided is a display device including a first sub-pixel, a second sub-pixel adjacent to the first sub-pixel. The first sub-pixel and the second sub-pixel each include a semiconductor film, a gate electrode, a gate insulating film, an interlayer insulating film, and a leveling film and further possesses a light-emitting element located over the leveling film. The display device has a partition wall located between the first sub-pixel and the second sub-pixel and a trench passing through the leveling film.

Abstract: A display device may include a substrate, a buffer layer on the substrate, a first active pattern on the buffer layer, the first active pattern having a first thickness, a second active pattern on the buffer layer spaced from the first active pattern and having a second thickness smaller than the first thickness, a first gate insulating layer on the first active pattern and the second active pattern, a first gate electrode on the first gate insulating layer, the first gate electrode overlapping the first active pattern, and a second gate electrode on the first gate insulating layer, the second gate electrode overlapping the second active pattern.

Abstract: A repairing structure includes a signal line, a first insulation layer and a second insulation layer. The first insulation layer is disposed on the signal line. The second insulation layer is disposed on the first insulation layer. The first insulation layer includes a first hole, and the first hole overlaps a part of the signal line. The second insulation layer includes a second hole, and the first hole and the second hole at least partially overlap. Therefore, the design of the repairing structure is simple, or the repairing time may be decreased, so as to increase the convenience of use.

Abstract: A flexible display device includes a base film, a display panel on the base film, a protective film on a surface of the display panel away from the base film, and an adhesive layer. An area of the base film is substantially identical to that of the display panel. An area of the protective film is less than that of the display panel. The adhesive layer is located on the surface of the display panel away from the base film. The adhesive layer and the protective film include an overlapping portion. The adhesive layer has a thickness and Young's modulus between 10 and 500 ?m and between 0.1 and 10 GPa, respectively. A side edge of the base film, a side edge of the display panel, and a side edge of the adhesive layer are substantially aligned. A manufacturing method of a flexible display device is also provided.

Abstract: A display device includes a substrate that includes a display area and a peripheral area, a transistor in the display area, a pixel electrode connected to the transistor, a common electrode that overlaps the pixel electrode, and an organic insulation layer that is between the common electrode and the substrate, and overlaps at least a part of the peripheral area, wherein a thickness of a portion of the organic insulation layer overlapping the display area, and a thickness of a portion of the organic insulation layer overlapping the peripheral area, are different from each other, and the organic insulation layer includes a valley that penetrates the organic insulation layer, while overlapping the peripheral area.

Abstract: This disclosure relates to the field of display technologies and, in particular to a thin film packaging structure and a display panel. A thin film packaging structure includes a first inorganic packaging layer for covering a device to be packaged; an organic packaging layer formed at a side of the first inorganic packaging layer; a second inorganic packaging layer formed at a side of the organic packaging layer facing away from the first inorganic packaging layer; and at least one first inorganic adjusting layer formed at a side of the first inorganic packaging layer facing away from the device to be packaged. The at least one first inorganic adjusting layer has an elasticity modulus greater than that of the first inorganic packaging layer or the second inorganic packaging layer.

Abstract: A display device is disclosed, which includes: a substrate; a first metal layer, disposed on the substrate and having a first pinhole; a pixel electrode layer, disposed on the substrate; and a light detecting element for detecting a light passing through the first pinhole, wherein the first metal layer is disposed between the substrate and the pixel electrode layer.

Abstract: The present disclosure relates to a module structure of a liquid crystal display, the module structure includes a panel glass assembly, a backlight assembly and a display housing retaining wall; an accommodating space formed by the display housing retaining wall accommodates the panel glass assembly and the backlight assembly; the panel glass assembly includes a front glass sheet, a rear glass sheet and a sealant for sealing a liquid crystal accommodating space between the front glass sheet and the rear glass sheet. The module structure is characterized in that, a filling gap is provided between outer peripheral surfaces of the front glass sheet and the rear glass sheet of the panel glass assembly and an inner peripheral surface of the display housing retaining wall facing the outer peripheral surfaces; and a panel edge protective adhesive is filled in the filling gap. The present disclosure also relates to a manufacturing process of the module structure.

Abstract: A display device including a plurality of thin film transistors. One of the plurality of thin film transistors includes a gate electrode, a semiconductor layer having a region overlapping the gate electrode, a gate insulating layer between the gate electrode and the semiconductor layer, a source electrode and a drain electrode in contact with a surface of the semiconductor layer opposite to the side of the gate insulating layer, and a first shield electrode arranged in a region where the source electrode and the gate electrode overlap, and a second shield electrode arranged in a region where the drain electrode and the gate electrode overlap. The first shield electrode and the second shield electrode are arranged between the gate electrode and the semiconductor layer, and are insulated from the gate electrode, the semiconductor layer, the source electrode, and the drain electrode.

Abstract: A display apparatus including: a first thin-film transistor and a second thin-film transistor on a substrate, wherein the first thin-film transistor includes a first electrode layer, and the second thin-film transistor includes a second electrode layer; an insulating layer having a first contact hole and a second contact hole respectively exposing the first electrode layer and the second electrode layer; a first pixel electrode connected to the first thin-film transistor through the first contact hole; and a second pixel electrode connected to the second thin-film transistor through the second contact hole. A top surface of the first pixel electrode overlapping the first electrode layer in the first contact hole has a first step facing a first direction, and a top surface of the second pixel electrode overlapping the second electrode layer in the second contact hole has a second step facing a second direction opposite to the first direction.

Abstract: A display device comprises a substrate including a display region including a plurality of sub-pixels and a pad region outside the display region; a display element disposed in each of the plurality of sub-pixels; a low potential electrode formed in the pad region to apply a low potential voltage to the display element; a light absorption layer disposed on the low potential electrode in the pad region; and an encapsulation layer formed in the display region and the pad region.

Abstract: A transistor display panel including a substrate, a gate line disposed on the substrate and extending in a first direction, a gate electrode protruding from the gate line, a gate insulating layer disposed on the gate line and the gate electrode, a semiconductor layer and an auxiliary layer disposed on the gate insulating layer and spaced apart from each other, a data line disposed on the gate insulating layer and extending in a second direction which is a direction crossing the gate line, a drain electrode disposed on the gate insulating layer and the semiconductor layer and spaced apart from the data line, and a pixel electrode connected to the drain electrode, in which the auxiliary layer overlaps an edge of the gate electrode in a plan view.

Abstract: A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

Abstract: A method for manufacturing a display module includes preparing a display module comprising a plurality of layers and forming a through-hole in the display module. The forming the through-hole includes performing a first irradiation process of irradiating a first laser beam along a first boundary defining the through-hole, performing a second irradiation process of irradiating a second laser beam along a second boundary after the first irradiation process, and performing a third irradiation process of irradiating a third laser beam along a third boundary after the second irradiation process. A time interval between the first irradiation process and the second irradiation process may be different from a time interval between the second irradiation process and the third irradiation process.

Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

Abstract: A method of making an integrated circuit includes operations to identify reverse signal nets of the circuit layout, determine the parasitic capacitance in conductive lines, and determine how to adjust an integrated circuit layout to reduce the parasitic capacitance of the conductive lines to the reverse signal net. The method further includes an operation to determine whether to move one of the conductive lines in the integrated circuit layout, an operation to determine whether to insert an isolation structure between the conductive lines of the reverse signal net having parasitic capacitance, and operations to adjust the layout by moving a conductive line.

Abstract: An electronic device and a control method are provided. The electronic device includes a sensing pixel. The sensing pixel includes a photosensitive element, a first transistor, a second transistor and a third transistor. The first transistor is coupled to the photosensitive element and for receiving a reset signal. The second transistor is coupled to the photosensitive element. The third transistor is coupled to the second transistor and for receiving a scan signal. During a reset period, a reset signal waveform of the reset signal and a first scan signal waveform of the scan signal are at least partially overlapped.

Abstract: A display panel, including a main display area and a light-transmitting display area; wherein the main display area surrounds the light-transmitting display area; the display panel includes: a substrate; an organic electroluminescent element array, including a plurality of organic electroluminescent elements disposed on the substrate; the driving circuit array is disposed on the substrate and is adapted to be matched with a high voltage source and a low voltage source for driving each of the organic light-emitting electroluminescent elements; wherein in the light-transmitting display area, the driving circuit array includes a passive driving circuit array; the passive driving circuit array is configured to drive the organic electroluminescent element of the light-transmitting display area to display.

Abstract: It is an object to suppress deterioration of characteristics of a transistor in a driver circuit. A first switch for controlling whether to set a potential state of an output signal by being turned on and off in accordance with the first input signal, and a second switch for controlling whether to set a potential state of an output signal by being turned on and off in accordance with the second input signal are included. A first wiring and a second wiring are brought into electrical continuity by turning on and off the first switch or the second switch.

Abstract: An apparatus, comprising: a substrate; a coupling capacitor that is formed over the substrate; and an isolator that is formed between the substrate and the coupling capacitor, the isolator including: (a) an MP-well layer, (b) a first well layer, (c) an epi tub layer that is nested in the MP-well layer and the first well layer, and (d) a second well layer that is nested in the epi tub layer.

Abstract: Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.

Abstract: An organic electroluminescent device includes a first transistor, a power supply line layer connected to one current terminal of the first transistor, a capacitive element including a first capacitive electrode connected to a gate of the first transistor, and a second capacitive electrode, a signal line, and a pixel electrode connected to the other current terminal of the first transistor, the first capacitive electrode is provided on a layer over the gate of the first transistor, and the power supply line layer is provided on a layer between the first capacitive electrode and the signal line.

Abstract: An active matrix substrate includes a plurality of first contact holes extending through an inorganic insulating film, a first protection layer that is a silicon nitride film, and a second protection layer, a plurality of second contact holes extending through the inorganic insulating film and the second protection layer, a first transistor, and a second transistor. A channel region of the second transistor does not overlap the first protection layer.

Abstract: A display device includes a base substrate including a display area and a bending area bent from the display area, the bending area including a central area, and an edge area positioned at a side of the central area, a pixel structure disposed in the display area on the base substrate, an inorganic pattern disposed in the central area on the base substrate, and an organic pattern disposed on the inorganic pattern, overlapping the inorganic pattern, and contacting the base substrate in the edge area.

Abstract: Methods for forming image sensors that leverage cavity profiles and induced stresses. In some embodiments, the method includes forming a cavity in a substrate where the cavity has a cavity profile that is configured to accept a sensor pixel structure for an image sensor, forming at least one passivation layer in the cavity, and forming at least one optical layer in the cavity on at least a portion of one of the at least one passivation layer. The at least one optical layer is configured to provide, at least, pixel-to-pixel optical isolation of the sensor pixel structure. The method further includes forming the sensor pixel structure in the cavity on the at least one optical layer of the sensor pixel structure where the cavity profile is configured to control stress on the sensor pixel structure.

Abstract: The present disclosure discloses an electroluminescent display panel and a display device. The electroluminescent display panel includes a plurality of repeat units, each of the plurality of repeat units includes a plurality of sub-pixels, and each of the plurality of sub-pixels includes: a first conductive layer, located on a substrate; a first insulation layer, located on the first conductive layer and including a first hole, in which the first hole exposes a portion of the first conductive layer; and an anode, located on the first insulation layer and including a main portion and an auxiliary portion which are electrically connected to each other. The auxiliary portion is electrically connected to the first conductive layer through the first hole. In at least one sub-pixel, an orthographic projection of the main portion on the substrate does not overlap an orthographic projection of the first hole on the substrate.

Abstract: A substrate includes a first base, a pixel defining layer and spacers. The pixel defining layer disposes above the first base and has a plurality of openings. The pixel defining layer includes a first pixel defining sub-layer and a second pixel defining sub-layer stacked in a direction away from the first base. The spacers dispose on a surface of the pixel defining layer facing away from the first base. The second pixel defining sub-layer includes a first conductive material doped at least in a surface of the second pixel defining sub-layer facing away from the first base, the spacers include a second conductive material doped at least in surfaces of the spacers facing away from the first base.

Abstract: An organic light-emitting panel, including a substrate, a planarization layer, a reflective layer and a bank layer, is provided. The substrate has a display region and a periphery region beside the display region. The planarization layer is disposed on the substrate and has an indentation. The reflective layer is disposed on the planarization layer. The reflective layer is formed along a sidewall of the indentation. The bank layer is disposed on the planarization layer, covers the indentation, and has a periphery taper surface. The indentation is adjacent to the periphery taper surface and is closer to the display region than the periphery taper surface. A fabrication method of the above organic light-emitting panel is also provided.

Abstract: This liquid crystal display apparatus is provided with: a TFT substrate comprising a thin film transistor and a pixel electrode connected to the thin film transistor; and a counter substrate comprising a common electrode that faces the pixel electrode via a liquid crystal layer. The thin film transistor comprises: a semiconductor layer deposited over a gate electrode via a gate insulating layer, while having a planar shape that has a first side and a second side each overlapping the gate electrode in plan view; and a first electrode which is connected to the pixel electrode and a second electrode which faces the first electrode, said first and second electrodes being formed on the semiconductor layer. The first side and the second side of the semiconductor layer are adjacent to each other at a predetermined angle; and the first electrode at least partially covers the first side and the second side.

Abstract: A display apparatus includes a first signal line and a second signal line that each extend on a substrate in a first direction and are spaced apart in a second direction that crosses the first direction; a plurality of first metal patterns spaced apart from each other in the first direction, wherein at least a portion of the first metal patterns overlaps the first signal line and is electrically connected to the first signal line; and a plurality of second metal patterns spaced apart from each other in the first direction, wherein at least a portion of the second metal patterns overlaps the second signal line and is electrically connected to the second signal line, wherein the plurality of first metal patterns and the plurality of second metal patterns are spaced apart in the first direction in a zigzag arrangement.

Abstract: A light-emitting device including first, second, and third pixels, wherein: the first pixel includes a two-dimensional light-emitting cell including a vertical stack of a first semiconductor layer of a first conductivity type, of an active layer, and of a second semiconductor layer of the second conductivity type; each of the second and third pixels includes a three-dimensional light-emitting cell including a plurality of nanostructures of same dimensions regularly distributed across the surface of the pixel, each nanostructure including a doped pyramidal semiconductor core of the first conductivity type, an active layer coating the lateral walls of the core, and a doped semiconductor layer of the second conductivity type coating the active layer; and the nanostructures of the second and third pixels have different dimensions and/or a different spacing.

Abstract: A display device and a method of the display device are provided. The display device includes a lower metal layer on a substrate, a buffer layer on the lower metal layer, a first semiconductor layer on the buffer layer, a gate insulating layer on the first semiconductor layer, a first gate electrode on the gate insulating layer, an interlayer insulating layer on the first gate electrode, a via layer on the interlayer insulating layer, a pixel electrode on the via layer and electrically connected to the first semiconductor layer, a light emitting layer on the pixel electrode, a common electrode on the light emitting layer, a first contact hole penetrating the buffer layer and the interlayer insulating layer and a second contact hole penetrating the interlayer insulating layer, and a first via hole and a second via hole each penetrating the via layer.

Abstract: A display device includes a plurality of subpixels each including a transmission portion and a light emitting portion on a substrate, wherein the light emitting portion includes a driving transistor and an organic light emitting diode connected to the driving transistor, and an extension line extending from a drain electrode of the driving transistor and a first electrode of the organic light emitting diode are connected to each other in the transmission portion.

Abstract: The present invention provides a display panel, and by means of using a plurality of sub-pixels as a sub-pixel unit, each sub-pixel unit corresponds to one gate fan-out line, such that a number of the gate fan-out lines of a pixel unit can be reduced, a width of a pixel opening area can be increased, and an aperture ratio (AR %) and response time (TR %) of the panel can be improved.

Abstract: An active matrix organic light emitting diode (AMOLED) pixel driving circuit, pixel driving method, and a display panel are provided. All or part of the thin film transistors, which assist to store data voltage stably in the storage capacitor, prevent flickering of the display panel caused by data loss, and thereby improve the display effect and quality of the display panel.

Abstract: A manufacturing method of a display device is provided. The manufacturing method of the display device includes forming a switching structure. The switching structure includes a plurality of switching elements. The manufacturing method of the display device also includes forming a light-emitting structure. The light-emitting structure includes a plurality of light-emitting elements. The manufacturing method of the display device further includes arranging the light-emitting structure on the switching structure, so that each of the light-emitting elements is above each of the switching elements. The manufacturing method of the display device includes connecting each of the light-emitting elements to a corresponding switching element via a laser.

Abstract: The present disclosure provides a thin film transistor, a fabricating method thereof, an array substrate, and a display device. The thin film transistor includes: a substrate; a channel region; a heavily doped first semiconductor pattern located on both sides of the channel region; a second semiconductor pattern disposed on the heavily doped first semiconductor pattern; a gate insulating layer covering the channel region and the second semiconductor pattern; a gate pattern disposed on the gate insulating layer, an orthographic projection of the gate pattern on the substrate being within an orthographic projection of the channel region on the substrate; and a source pattern and a drain pattern in contact with the heavily doped first semiconductor pattern through the first via and the second via, respectively.

Abstract: An electroluminescent display device includes a substrate having an emission region and a bezel region, a bank layer that extends from the emission region to the bezel region, a plurality of signal lines which are disposed on different layers on the substrate, a first metal layer that overlaps the plurality of signal lines and has a step, a second metal layer that is disposed on the first metal layer, and an intermediate layer between the first and second metal layer. A step or curvature above the first electrode may be offset by the first intermediate layer so that incident from the outside is inwardly reflected. Therefore, a failure that a user at the outside recognizes the reflected light may be solved.

Abstract: The embodiments of the present disclosure disclose a pixel circuit and a driving method thereof, a display substrate, and a display device, the present disclosure belongs to the field of displaying. The pixel circuit includes a gate line, a data line, a first charging sub-circuit, a second charging sub-circuit and a display sub-circuit; the first charging sub-circuit is configured to be controllable to output a data signal from the data line to a charging node and to store the data signal from the data line; and the second charging sub-circuit is respectively connected to the charging node, the gate line and the display sub-circuit, and is configured to be controllable to output a data signal from the charging node to the display sub-circuit.

Abstract: A thin film transistor is provided. The thin film transistor includes an active layer, and the active layer includes a plurality of stacked structures, and each of the stacked structures includes: a N-layer indium oxidation layer; a gallium oxidation layer, the gallium oxidation layer is provided on the indium oxidation layer of the N-layer indium oxidation layer; and a zinc oxidation layer is provided on the gallium oxidation layer. These stacked structures improve the performance of the thin film transistor. A preparation method of the thin film transistor and a display panel containing the thin film transistor is also provided.

Abstract: A luminescent display device includes a substrate and a thin-film transistor above the substrate. The thin-film transistor includes a semiconductor layer, a gate insulating film on the semiconductor layer, a gate electrode on the gate insulating film, a source electrode, and a drain electrode. The luminescent display device further includes an interlayer insulating film on the gate electrode, a first capacitor electrode on the interlayer insulating film in a region above the gate electrode, and a luminescent element configured to be driven by a driver to produce luminescence. The driver includes the thin-film transistor, and the first capacitor electrode and the gate electrode constitute a capacitor.