Abstract: A display apparatus includes a substrate; a lower conductive layer including a protective pattern and an auxiliary conductive pattern on the substrate; a buffer layer on the lower conductive layer; an active pattern on the buffer layer and overlapping the protective pattern; a first insulation layer on the active pattern; and a first conductive layer on the first insulation layer, the first conductive layer including a gate electrode overlapping the active pattern and a load matching line overlapping the auxiliary conductive pattern.

Abstract: A display device includes a plurality of pixels disposed in an display area, and a pixel driver connected to at least two of the pixels, wherein the pixel driver drives the at least two pixels, where a portion of the pixel driver is disposed in the display area, and the display device includes the display area, on which an image is displayed, and a non-display area, on which no image is displayed.

Abstract: A display device includes a TFT layer provided with a terminal configured to receive a signal inputted from an external source, and a terminal wiring line in a lower layer underlying the terminal, and a light emitting element layer in an upper layer overlying the TFT layer. The terminal includes a main portion and a peripheral portion surrounding the main portion. The peripheral portion is covered by a cover film, the terminal wiring line and a lower face of the peripheral portion are in contact, and the main portion and the terminal wiring line overlap via at least one terminal base film.

Abstract: An organic light-emitting display apparatus is provided as follows. A thin film transistor is disposed on a substrate. A first insulating layer covers the thin film transistor. The first insulating layer includes a barrier wall and a flat portion. The barrier wall protrudes from the flat portion. A pixel electrode is disposed on the flat portion surrounded by the barrier wall. The pixel electrode is electrically connected to the thin film transistor. A pixel defining layer is disposed on the pixel electrode and partially exposes the pixel electrode.

Abstract: An organic light-emitting diode display may have an array of pixels. The pixels may each have an organic light-emitting diode with a respective anode and may be formed from thin-film transistor circuitry formed on a substrate. A mesh-shaped path may be used to distribute a power supply voltage to the thin-film circuitry. The mesh-shaped path may have intersecting horizontally extending lines and vertically extending lines. The horizontally extending lines may be zigzag metal lines that do not overlap the anodes. The vertically extending lines may be straight vertical metal lines that overlap the anodes. The pixels may include pixels of different colors. Angularly dependent shifts in display color may be minimized by ensuring that the anodes of the differently colored pixels overlap the vertically extending lines by similar amounts.

Abstract: A display device includes a pixel array, multiple data lines, and multiple gate lines. The pixel array includes multiple pixel units. The data lines are coupled to the pixel array. The gate lines are coupled to the pixel array. One of the pixel units includes a switch circuit, a display unit, and a first voltage level shifting circuit. The switch circuit is coupled to one of the data lines and one of the gate lines. The first voltage level shifting circuit is coupled between the switch circuit and the display unit and configured to adjust the voltage level of a data driving signal provided by the data line to the display unit.

Abstract: A flexible display device including a touch sensor is disclosed. In one aspect, the display device includes a flexible substrate, a light emission layer formed over the flexible substrate, and an encapsulation layer formed over the light emission layer and comprising a plurality of encapsulating thin films and a touch detecting layer configured to detect a touch input. The encapsulating thin films include at least one inorganic film and at least one organic film and the touch detecting layer is interposed between a selected one of the at least one inorganic film and a selected one of the at least one organic film that are adjacent to each other.

Abstract: A method of forming an active matrix pixel that includes forming a driver device including contact regions deposited using a low temperature deposition process on a first portion of an insulating substrate. An electrode of an organic light emitting diode is formed on a second portion of the insulating substrate. The electrode is in electrical communication to receive an output from the driver device. At least one passivation layer is formed over the driver device. A switching device comprising at least one amorphous semiconductor layer is formed on the at least one passivation layer over the driver device.

Abstract: An array substrate of display panel comprises a substrate, a first and second transistors disposed on the substrate. The first and second transistors are electrically connected and share a semiconducting layer which comprises a first lateral portion, a turning portion and a bottom portion. The turning portion connects to the first lateral portion. The bottom portion connects to the turning portion. In one embodiment, a first outer edge extending line of the first lateral portion, a second outer edge extending line of the bottom portion and a third outer edge of the turning portion defines a first region. A first inner edge extending line of the first lateral portion, a second inner edge extending line of the bottom portion and a third inner edge of the turning portion defines a second region. The area of the first region is smaller than that of the second region.

Abstract: A flexible display device including a touch sensor is disclosed. In one aspect, the display device includes a flexible substrate, a light emission layer formed over the flexible substrate, and an encapsulation layer formed over the light emission layer and comprising a plurality of encapsulating thin films and a touch detecting layer configured to detect a touch input. The encapsulating thin films include at least one inorganic film and at least one organic film and the touch detecting layer is interposed between a selected one of the at least one inorganic film and a selected one of the at least one organic film that are adjacent to each other.

Abstract: Apparatuses for providing external terminals of a semiconductor device are described. An example apparatus includes: a pad included in a pad formation area that receives a power voltage; a sub-threshold current reduction circuit (SCRC) included in a peripheral circuit area including a via disposed on a first side of the peripheral circuit area, and a wiring that couples the pad to the via. The SCRC further includes: a voltage line coupled to the via; a logic gate circuit that propagates a signal; an SCRC voltage line coupled to the logic gate circuit; and a SCRC switch disposed in proximity to the via and couples the SCRC voltage line to the voltage line.

Abstract: To improve the accuracy of fully controlling the direction of advancing light. The liquid crystal element includes a first substrate and a second substrate, a liquid crystal layer provided between one surface side of the first substrate and one surface side of the second substrate, a pair of electrodes provided on one surface side of the first substrate with a gap therebetween in a planer view, a high-resistance film provided on one surface side of the first substrate and disposed between the pair of electrodes in a planer view and connected thereto, a first alignment film provided on one surface side of the first substrate covering the pair of electrodes and the high-resistance film, a second alignment film provided on one surface side of the second substrate, wherein sheet resistance of the high-resistance film is greater than sheet resistance of the pair of electrodes.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to interrupted small block shape structures (e.g., cut metal lines forming cell boundaries) and methods of manufacture. The structure includes: a plurality of wiring lines with cuts that form a cell boundary; and at least one wiring line extending beyond the cell boundary and which is continuous from cell to cell.

Abstract: A display apparatus includes: a display panel including a gate line, a storage line adjacent to the gate line, and a pixel, the pixel including a pixel transistor coupled to the gate line, a liquid crystal (“LC”) capacitor coupled to the pixel transistor, and a storage capacitor coupled to the LC capacitor; a first gate driver configured to provide a gate signal to the gate line; and a first level switch configured to provide a storage signal to the storage line, the storage signal being synchronized with the gate signal and having a phase opposite to a phase of the gate signal.

Abstract: A backplane for an electro-optic display that includes a data line, a transistor, a pixel electrode connected to the data line via the transistor, the pixel electrode positioned adjacent to part of the data line so as to create a data line/pixel electrode capacitance. The backplane further including a shield electrode disposed adjacent to at least part of the data line so as to reduce the data line/pixel electrode capacitance.

Abstract: A semiconductor device is provided in which, as a result of the number of tap cells being suppressed while the laying out of signal interconnects is made easier, the total layout area can be reduced.

Abstract: A display panel and a display device are provided. The display panel includes a first substrate having a step area; a second substrate disposed opposite to the first substrate, wherein the second substrate has a first surface facing the first substrate and an opposite second surface; a Chip On Flex (COF) disposed on the step area of the first substrate and including at least one ground pad; a conductive layer disposed on the second surface of the second substrate; and a conductive adhesive electrically connected to the conductive layer and the at least one ground pad.

Abstract: An array substrate and a manufacturing method thereof are provided. The method for manufacturing the array substrate includes: forming a passivation layer on a base substrate; forming photoresist on the passivation layer, and forming a first photoresist pattern including a photoresist-completely-retained region, a photoresist-partially-retained region and a photoresist-completely-removed region, by exposure and development processes; forming a first through hole in the passivation layer by etching the passivation layer with the first photoresist pattern as a mask; forming a second photoresist pattern by performing ashing on the first photoresist pattern to remove the photoresist in the photoresist-partially-retained region and reduce a thickness of the photoresist in the photoresist-completely-retained region; and etching the passivation layer with the second photoresist pattern as a mask, so as to reduce a thickness of the passivation layer in the photoresist-partially-retained region.

Abstract: A display panel, a method of manufacturing a display panel, and a display device are provided. The display panel includes an array substrate and a color filter layer on the array substrate. The array substrate includes a display region and a non-display region. The display region includes a photo-sensor.

Abstract: A display device includes a plurality of pixels disposed in an display area, and a pixel driver connected to at least two of the pixels, wherein the pixel driver drives the at least two pixels, where a portion of the pixel driver is disposed in the display area, and the display device includes the display area, on which an image is displayed, and a non-display area, on which no image is displayed.

Abstract: A display device according to the present disclosure includes: a transistor section (100) that includes a gate insulating film (130), a semiconductor layer (140), and a gate electrode layer (120), the semiconductor layer being laminated on the gate insulating film, the gate electrode film being laminated on an opposite side to the semiconductor layer of the gate insulating film; a first capacitor section (200) that includes a first metal film (210) and a second metal film (220), the first metal film being disposed at a same level as wiring layers (161, 162) that are electrically connected to the semiconductor layer and is disposed over the transistor section, the second metal film being disposed over the first metal film with a first interlayer insulating film (152) in between; and a display element that is configured to be controlled by the transistor section.

Abstract: The present invention provides a temperature sensing circuit, which comprises a switching circuit, a charging circuit, and a judging circuit. The switching circuit receives a supply voltage for generating a switching signal. The charging circuit is coupled to the switching circuit and receives the supply voltage. The switching signal controls the charging circuit for generating a voltage signal according to the supply voltage. The judging circuit is coupled to the charging circuit for generating a judging signal according to the level of the voltage signal. The levels of the switching signal and the voltage signal are related to a temperature state; and the judging signal represents the temperature state. The temperature sensing circuit can be applied to the driving circuit of a display panel for detecting the temperature state. Hence, the level of the driving signal of the driving circuit can be adjusted for improving the image quality.

Abstract: A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.

Abstract: Disclosed are a controlling device and method for frequency synchronization as well as a LCD TV. The method is applied to an LCD TV, wherein the LCD TV includes a front-end motherboard chip, a main drive control chip and a plurality of column drive control chips, the method includes: when the main drive control chip recognizes that its operating frequency is unstable, it generates a clock turn-off signal; the main drive control chip transmits fixed data to each column drive control chip according to the clock turn-off signal and receives a clock training request initiated by each column drive control chip according to the fixed data; and when recognizing that the operating frequency synchronizes with a frequency corresponding to front-end data transmitted by the front-end motherboard chip, the main drive control chip responds to the clock training request and transmits clock training data to each column drive control chip.

Abstract: The disclosed technology provides a TFT-LCD pixel electrode layer structure comprising: a pixel electrode pattern corresponding to a display region of a liquid crystal panel; a peripheral region pattern corresponding to a non-display region of the liquid crystal panel; and a periphery filling pattern in a portion of the non-display region where no peripheral region pattern is formed. The disclosed technology may be applied to manufacture of a liquid crystal display. The disclosed technology further provides a method for forming a TFT-LCD pixel electrode layer structure and a mask therefor.

Abstract: Apparatuses for providing external terminals of a semiconductor device are described. An example apparatus includes: a pad included in a pad formation area that receives a power voltage; a sub-threshold current reduction circuit (SCRC) included in a peripheral circuit area including a via disposed on a first side of the peripheral circuit area, and a wiring that couples the pad to the via. The SCRC further includes: a voltage line coupled to the via; a logic gate circuit that propagates a signal; an SCRC voltage line coupled to the logic gate circuit; and a SCRC switch disposed in proximity to the via and couples the SCRC voltage line to the voltage line.

Abstract: A display panel, a display device including the same and a method for making the display panel are disclosed in the embodiments of the disclosure. The display panel includes: a drive module and a plurality of pixel units. Each pixel unit of the plurality of pixel units has a plurality of sub-pixel units and a plurality of image sensing units, each of the plurality of sub-pixel units being corresponding to each of the plurality of image sensing units respectively; each sub-pixel unit of the plurality of pixel units and each image sensing unit of the plurality of image sensing units are connected to the drive module, each sub-pixel unit being arranged to be adjacent to an image sensing unit corresponding thereto; and the drive module is configured to drive the plurality of image sensing units so as to take images, and to drive the plurality of sub-pixel units as so to display the images.

Abstract: A touch panel includes multiple first electrodes, multiple first wiring lines, multiple second electrodes, multiple second wiring lines, a switch electrode, a third wiring line, and a shield section. The first electrodes are disposed parallel to each other in the first direction. The second electrodes intersect with the first electrodes, and are disposed parallel to each other in the second direction. The shield section is insulated from the second wiring lines and the third wiring lines, and is disposed to cover the second wiring lines and the third wiring lines.

Abstract: The present disclosure relates to a process of manufacturing a photomultiplier microcell. The process comprises providing an insulating layer over an active region; and implanting a dopant through the insulating layer to form a photosensitive diode in the active region. The insulating layer once formed is retained over the active region throughout the manufacturing process.

Abstract: A system and method for matching and merging documents from disparate data sources into a single data store for a particular entity are provided. The system and method may be particularly useful for a healthcare system to match and merge data from disparate data sources about a healthcare provider.

Abstract: The present invention provides a manufacturing method of an IPS array substrate and an IPS array substrate.

Abstract: A cholesteric liquid crystal (ChLC) electronic writing device incorporates a dot pattern recognition system. When writing pressure is applied to the writing device an image composed of writing or drawing is displayed by a pressure sensitive ChLC polymer dispersion stacked in a multilayer system of the device. A specialized stylus with sensor and associated electronics is used to form the image on the electronic writing device. The stylus produces electrical information indicating the path or trajectory of the writing that is displayed by the electronic writing device, which can be transferred via wireless signal to any other displaying device. This forms a replica image on the displaying device that is a replica of the image on the electronic writing device.

Abstract: A method of forming a glass substrate includes providing a glass substrate having alumina, translating a pulsed laser beam on the glass substrate to form one or more pilot holes, contacting the glass substrate with an etching solution, and providing agitation. The etching solution has a pH from about 0 to about 2.0, and an etch rate is less than about 3 ?m/min. A glass substrate is disclosed having a first surface and a second surface opposite the first surface in a thickness direction, and at least one hole penetrating the first surface, wherein the at least one hole has been etched by an etching solution. A greatest distance d1 between (1) a first plane that contacts the first surface in regions that do not have the at least one hole or a deviation in a thickness of the substrate surrounding the at least one hole and (2) a surface of the deviation recessed from the first plane is less than or equal to about 0.2 ?m.

Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

Abstract: A display apparatus includes at least one pixel structure, which includes an active device, an electric insulation layer and a pixel electrode. The electric insulation layer is disposed on the active device. The electric insulation layer has a trench and a via. The via is located on a bottom surface of the trench. A portion of the electric insulation layer surrounding the trench is monolithically connected to another portion of the electric insulation layer surrounding the via. A pixel electrode has a first electrode portion and a second electrode portion connected to each other. The first electrode portion is located in the trench. A thickness of the first electrode portion is less than a depth of the trench. The second electrode portion is located in the via and is electrically connected to the active device through the via.

Abstract: A head mounted display (HMD) includes a first display portion included in the HMD, the first display portion having a first pixel density, a second display portion included in the HMD, the second display portion having the first pixel density, a third display portion attached to the HMD, the third display portion having a second pixel density, and at least one image combiner configured to combine two images by reflecting an image projected by the first display portion and the second display portion and allowing an image projected by the third display portion to pass through the at least one image combiner.

Abstract: An oxide semiconductor device and a method for manufacturing the same are provided in the present invention. The oxide semiconductor device includes a back gate, an oxide semiconductor film, a pair of source and drain electrodes, agate insulating film, a gate electrode on the oxide semiconductor film with the gate insulating film therebetween, an insulating layer covering only over the gate electrode and the pair of source and drain electrodes, and a top blocking film over the insulating layer.

Abstract: A radiation treatment collimator having a multilayered linkage structure, the collimator providing various shapes of spaces to form an irradiation area transmitting radioactive rays therethrough, the collimator comprising: a fixed frame disposed on a plate; multiple pixel board layers fixedly stacked at predetermined intervals on top of each other inside the fixed frame, each pixel board layer being configured in a lattice form and having pixel covers disposed correspondingly to the respective lattices in such a manner as to be open and closed individually; control units disposed on both sides of the fixed frame to individually control the operations of the pixel covers of the pixel board layers; and power source units disposed on the front and rear sides of the fixed frame to supply the pixel board layers with operating power.

Abstract: A display device is provided that includes a plurality of pixel circuits that are arranged in a matrix and supplied with power through a first power supply line maintained at a first voltage and a second power supply line maintained at a second voltage having a positive value less than the first voltage. The display device also includes a first power supply circuit of a synchronous rectification type that outputs the first voltage to the first power supply line by chopping an input voltage. The display device further includes a second power supply circuit of the synchronous rectification type that outputs the second voltage to the second power supply line by chopping the first voltage.

Abstract: A display device may include a substrate, a display area, a peripheral region, a driving circuit and a dummy wire. A display area formed on a side of the substrate and in which a plurality of pixels are provided. A peripheral region surrounds the display area. A driving circuit provided in the peripheral region, which provides a driving voltage to the plurality of pixels and includes a driving voltage terminal for receiving the driving voltage. A dummy wire portion provided in the peripheral region, separated from the display area with the driving circuit therebetween, and includes a plurality of dummy wires. The driving voltage terminal of the driving circuit is connected to at least one of the plurality of dummy wires.

Abstract: A display device includes a substrate and first, second and third thin film transistor. The first thin film transistor is disposed over the substrate, and includes a first gate electrode which has a first transmittance. The second thin film transistor is disposed over the substrate, and includes a second gate electrode which has a second transmittance substantially different from the first transmittance. The third thin film transistor is disposed over the substrate, and includes a third gate electrode which has a third transmittance substantially different from the first transmittance.

Abstract: According to one embodiment, a semiconductor device includes first and second gate electrodes, a semiconductor layer, an output electrode, and an insulating layer. The semiconductor layer includes first source and drain areas, a first channel area facing the first gate electrode, second source and drain areas, and a second channel area facing the second gate electrode. The output electrode outputs voltage produced in the first and second drain areas. In the semiconductor device, the first drain area is in contact with the second drain area. The insulating layer includes a hole portion communicating with one of the first and second drain areas. The output electrode is in contact with one of the first and second drain areas via the hole portion.

Abstract: An OLED display is disclosed. A plurality of signal lines are formed over a substrate, and a plurality of pixels are formed over the substrate in a matrix form and electrically connected to corresponding signal lines. The signal lines include a plurality of scan lines configured to transmit a scan signal, a plurality of initialization lines configured to transmit an initialization signal, and a plurality of data lines configured to transmit a data signal. An n-th row pixel includes a switching thin film transistor (TFT) electrically connected to an n-th row scan line and a corresponding data line among the data lines. A driving TFT is electrically connected to a drain of the switching TFT, an OLED is electrically connected to a drain of the driving TFT, and an initialization TFT is configured to be turned on based on an initialization signal transmitted via an n-th row initialization line.

Abstract: An infrared detector includes a substrate, a light blocking layer on the substrate, a lower electrode on the light blocking layer, the lower electrode electrically connected to the light blocking layer, a lower insulating layer on the light blocking layer, a first semiconductor layer on the lower insulating layer, a first source electrode and a first drain electrode on the first semiconductor layer, an upper insulating layer on the first semiconductor layer, and a first gate electrode on the upper insulating layer, the first gate electrode electrically connected to the lower electrode, where the first semiconductor layer includes a zinc and a nitrogen, and the first semiconductor layer is configured to generate electric charges by reacting with an infrared ray.

Abstract: A display panel and manufacturing method. The method includes: forming a source electrode, a drain electrode and a channel on a substrate; depositing a first insulation layer; forming multiple color photoresists on the first insulation layer, and the source electrode, the drain electrode and the channel are located between two adjacent color photoresists; forming a gate electrode and a common electrode by a same process, and the gate electrode is located on the first insulation layer, and the common electrode is located on the photoresist; forming a second insulation layer having a through hole communicated with the source electrode on the gate electrode and the common electrode; forming a pixel electrode on the second insulation layer. The pixel electrode contacts with the source electrode through the through hole, and a storage capacitor is formed. The storage capacitor can be increased and the current leakage of the pixel electrode improved.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region and a second region; forming a gate layer on the substrate; forming a first gate dielectric layer on the gate layer; forming a first channel layer on the first region and a second channel layer on the second region; and forming a first source/drain on the first channel layer and a second source/drain on the second channel layer.

Abstract: A plurality of source signal lines extend parallel to each other. A plurality of gate signal lines extend parallel to each other and intersect the plurality of source signal lines. At least any one of array inspecting terminals is provided. The one array inspecting terminal is connected to two or more signal lines of the plurality of gate signal lines. The other array inspecting terminal is connected to two or more signal lines of the plurality of source signal lines. To perform an inspection for a unit of the two or more signal lines by detecting a value of a voltage or a current generated in the signal lines, the array inspecting terminals are configured to receive an inspection signal for generating the voltage or the current.

Abstract: A display device includes a substrate, a display element, a transistor as a drive element of the display element, and a holding capacitance element holding electric charge corresponding to a video signal, and including a first conductive film, a first semiconductor layer including an oxide semiconductor, an insulating film, and a second conductive film in order of closeness to the substrate. The display element, the transistor, and the holding capacitance element are provided on the substrate.

Abstract: The present invention belongs to the technical field of display, and specifically relates to an OLED pixel structure and an OLED display device. The OLED pixel structure comprises a thin film transistor and an OLED device, the thin film transistor being provided with a driving electrode for controlling whether the OLED device emits light or not, wherein the pixel structure comprises a transmission region and a reflection region in which a reflection layer formed by extending the driving electrode is provided. The beneficial advantages are that the OLED pixel structure can effectively improve the utilization of the light source and the utilization of the display panel.

Abstract: A luminescent display device includes a substrate and a thin-film transistor above the substrate. The thin-film transistor includes a semiconductor layer, a gate insulating film on the semiconductor layer, a gate electrode on the gate insulating film, a source electrode, and a drain electrode. The luminescent display device further includes an interlayer insulating film on the gate electrode, a first capacitor electrode on the interlayer insulating film in a region above the gate electrode, and a luminescent element configured to be driven by a driver to produce luminescence. The driver includes the thin-film transistor, and the first capacitor electrode and the gate electrode constitute a capacitor.