Abstract: A method for manufacturing a solid-state imaging device, comprising: a step of forming an imaging portion comprising a photoelectric conversion portion and a charge transfer portion that transfers charges generated in the photoelectric conversion portion; and a step of forming a condensing lens over the imaging portion, wherein the step of forming the condensing lens comprises: a step of forming a lens substrate for forming a lens; a step of forming a first optical film having a lens shape by patterning the lens substrate; and a step of forming a second optical film on the first optical film by controlling a filming condition so as to form the lens having a desired curvature.

Abstract: In a semiconductor device which has through holes in an end face, in which a semiconductor element is fixedly mounted on a face of a substrate which has a wiring pattern, which is conductive to the wiring portion formed in the through hole, in at least one face, in which electrodes of the semiconductor element are electrically connected to the wiring pattern, and in which the face of the substrate which has the semiconductor element is coated with a resin, the through hole has a through hole land with a width of 0.02 mm or more, which is conductive to the wiring portion, in a substrate face, and the wiring portion and the through hole land are exposed.

Abstract: In a back-surface electrode type photoelectric conversion element having electrodes and semiconductor layers for collecting carriers disposed only on a back surface side of a semiconductor substrate, a semiconductor thin film that is larger in band gap than the semiconductor substrate and that contains an element causing a conductivity identical to or different from a conductivity of the semiconductor substrate is provided on a light-receiving surface side of the semiconductor substrate, and a diffusion layer is formed on a surface of the semiconductor substrate.

Abstract: There is disclosed a photovoltaic conversion device constructed using a p-type crystalline silicon substrate 404 doped with boron, which comprises a bulk substrate region 404, regions other than the bulk substrate region including an n-type region 403a joining to a light receiving surface of the bulk surface region, a BSF region 405 joining to a back surface of the bulk surface region, wherein with regions other than the bulk substrate region 404 being removed, when a minority carrier diffusion length of the bulk substrate region 404 is measured from the light receiving surface of the bulk surface region, 0.