Abstract: In an example embodiment, an image sensor includes a semiconductor layer and isolation regions disposed in the semiconductor layer. The isolation regions define active regions of the semiconductor layer. The image sensor further includes photoelectric converters disposed in the semiconductor layer and at least one wiring layer disposed over a top surface of the semiconductor layer. The image sensor also includes color filters disposed below a bottom surface of the semiconductor layer and lenses disposed below the color filters. Each lens is arranged to concentrate incoming light into an area spanned by a corresponding photoelectric converter.

Abstract: Methods for forming a photovoltaic device include depositing a p-type layer on a substrate and cleaning the p-type layer by exposing a surface of the p-type layer to a plasma treatment to react with contaminants. An intrinsic layer is formed on the p-type layer, and an n-type layer is formed on the intrinsic layer.

Abstract: According to one embodiment, a solid-state imaging element, includes a plurality of impurity regions provided with a prescribed interval, each of the impurity regions acting as a channel for transferring charges, wherein the impurity region has a trapezoid shape in which bases is perpendicularly directed to a charge transfer direction, a width of a first base of the bases at a transferring side is larger than a width of a second base of the bases at a receiving side.

Abstract: Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a work function that falls substantially in a middle of a barrier formed between the transparent electrode and the p-type layer to provide a greater resistance to light induced degradation. An intrinsic layer and an n-type layer are formed over the p-type layer.

Abstract: An embodiment relates to a device comprising a substrate, a nanowire and a doped epitaxial layer surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. Another embodiment relates to a device comprising a substrate, a nanowire and one or more photogates surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire, and wherein the one or more photogates comprise an epitaxial layer.

Abstract: A method for manufacturing a thin-film photoelectric conversion device includes forming a first electrode layer, a photoelectric conversion layer having three conductive semiconductor layers laminated thereon, and a second electrode layer sequentially laminated in this order on a translucent insulating substrate, such that adjacent thin-film photoelectric conversion cells are electrically connected in series, isolating a thin-film photoelectric conversion cell into a plurality of thin-film photoelectric conversion cells by forming isolation trenches that reach from the second electrode layer to the first electrode layer, removing a part of sidewalls at an external periphery of the thin-film photoelectric conversion cells positioned at an external peripheral edge of the thin-film photoelectric conversion device, along with the external periphery, and modifying into insulation layers by performing an oxidation process on all of the sidewalls of the isolation trenches of the photoelectric conversion layer and al

Abstract: A photovoltaic device is presented. The photovoltaic device includes a transparent conductive layer; a window layer disposed on the transparent conductive layer; and an absorber layer disposed on the window layer. The window layer includes a low-diffusivity layer disposed adjacent to the transparent conductive layer and a high-diffusivity layer interposed between the low-diffusivity layer and the absorber layer. Method of making a photovoltaic device is also presented.

Abstract: A photovoltaic device cell comprising a first light transmissive electrical contact, an active region, a second light transmissive electrical contact, and a layered structure enclosing the active region, the layered structure being formed of two parts, a first part underlying the first light transmissive electrical contact and a second part overlying the second electrical contact and wherein the constants of the layers in these layered structures are interdependent such that light is localized within the active region.

Abstract: A solar cell, a solar cell manufacturing device, and a method for manufacturing the solar cell are discussed. The solar cell manufacturing device includes a chamber; an ion implantation unit configured to implant ions into a substrate inside the chamber and a mask positioned between the ion implantation unit and the substrate. The mask includes a first opening to form a lightly doped region having a first concentration at one surface of the substrate, a second opening to form a heavily doped region having a second concentration higher than the first concentration at the one surface of the substrate, and at least one connector formed to cross the second opening. The second opening includes finger openings formed in a first direction, and bus openings formed in a second direction crossing the first direction.

Abstract: A photoelectric device includes a substrate having a generation region and a non-generation region so that the non-generation region is adjacent to the generation region, at least one photoelectric conversion unit in the generation region, and at least one electrode in the non-generation region. The electrode includes an inclined side extending at an acute angle from the substrate.

Abstract: A solar cell system making method includes steps of making a round P-N junction by (a) stacking a P-type silicon layer and a N-type silicon layer on top of each other, and (b) forming a P-N junction near an interface between the P-type silicon layer and the N-type silicon layer; cutting the round P-N junction into a plurality of arc shaped solar cell preforms; forming an arc shaped surface by stacking the plurality of arc shaped solar cell preforms along a first direction and forming an electrode layer between each adjacent two of the plurality of arc shaped solar cell preforms; and forming a first collection electrode and a second collection electrode to form an arc shaped solar cell system having a photoreceptive surface being on the arc shaped surface and being configured to receive incident light beams.

Abstract: A thin film photovoltaic cell and method for forming the same. The thin film photovoltaic cell includes a first electrode layer formed on a substrate. An absorber layer of a first dopant-type is formed on the first electrode layer. The absorber layer has an opening extending partially into the absorber layer from a top surface of the absorber layer. The opening has side walls and a bottom surface. A buffer layer of a second dopant type is formed on the top surface of the absorber layer, the side walls of the opening and the bottom surface of the opening A second electrode layer is formed on the buffer layer.

Abstract: In a method for manufacturing a solar cell where the solar cell includes a dopant layer having a first portion of a first resistance and a second portion of a second resistance lower than the first resistance, the method includes ion-implanting a dopant into the semiconductor substrate to form the dopant layer; firstly activating by heating the second portion and activating the dopant at the second portion; and secondly activating by heating the first portion and the second portion and activating the dopant at the first portion and the second portion.

Abstract: The present invention relates to a solar-cell-marking method. The method comprises providing a substrate for a solar cell, forming an etching mask on the substrate, and carrying out an etching process, wherein an elevated marking structure defined by the etching mask is formed on the substrate. The invention further relates to a solar cell comprising such a marking structure.

Abstract: A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer, wherein the quantum material layer includes a plurality of alternating quantum well layers and barrier layers epitaxially grown on the bulk substrate layer. The method further includes applying at least one frontside common electrical contact to a frontside of the quantum well wafer, bonding a transparent substrate to the frontside of the quantum well wafer, thinning the bulk substrate layer of the quantum well wafer, and etching the quantum material layer to form quantum well facets that define at least one pyramidal quantum well stack. A backside electrical contact may be applied to the pyramidal quantum well stack. In one embodiment, a plurality of quantum well stacks is bonded to a read-out integrated circuit of a focal plane array.

Abstract: A photovoltaic device operable to convert light to electricity, comprising a substrate, one or more structures essentially perpendicular to the substrate, and a wavelength-selective layer disposed on the substrate, wherein the structures comprise a crystalline semiconductor material.

Abstract: Provided are solar cells and methods of manufacturing the same. The solar cell includes a first electrode, a second electrode facing and separated from the first electrode, and a quantum dot-graphine hybrid composite disposed between the first and second electrodes. Quantum dots are combined with graphine in a ?-bond within the quantum dot-graphine hybrid composite.

Abstract: An improved method of fabricating an interdigitated back contact (IBC) solar cell is disclosed. A first mask is used to perform a patterned ion implantation of n-type dopant to create the back surface field. A second mask is then used to create the p-type emitter on the same surface. The second mask may be aligned to the n-type implant, and may be used in a plurality of orientations to create the desired p-type emitter. In some embodiments, a p-type blanket implant is performed as well. In some embodiments, a doping gradient is created.

Abstract: Dopant ink compositions and methods of fabricating solar cells there from are described. A dopant ink composition may include a cross-linkable matrix precursor, a bound dopant species, and a solvent. A method of fabricating a solar cell may include delivering a dopant ink composition to a region above a substrate. The dopant ink composition includes a cross-linkable matrix precursor, a bound dopant species, and a solvent. The method also includes baking the dopant ink composition to remove a substantial portion of the solvent of the dopant ink composition, curing the baked dopant ink composition to cross-link a substantial portion of the cross-linkable matrix precursor of the dopant ink composition, and driving dopants from the cured dopant ink composition toward the substrate.

Abstract: An image sensor comprises a substrate, a plurality of photoelectric transducer devices, an interconnect structure, at least one dielectric isolator and a back-side alignment mark. The substrate has a front-side surface and a back-side surface opposite to the front-side surface. The interconnect structure is disposed on the front-side surface. The photoelectric transducer devices are formed on the front-side surface. The dielectric isolator extends downwards into the substrate from the back-side surface in order to isolate the photoelectric transducer devices. The back-side alignment mark extends downwards into the substrate from the back-side surface and references to a front-side alignment mark previously formed on the front-side surface.

Abstract: Disclosed is a non-planar energy transducer, including a substrate and a switching device disposed thereon. An elastomer having a periodic structure is disposed on the switching device. A bottom electrode is conformally disposed on the elastomer to electrically connect to the switching device. An energy conversion layer is conformally disposed on the bottom electrode, and a top electrode is conformally disposed on the energy conversion layer, wherein the top electrode connects to a positive voltage or a negative voltage.

Abstract: A photovoltaic power generation apparatus includes a first photovoltaic power generation element having a surface in the shape of a triangle, and a second photovoltaic power generation element having a surface in the shape of a trapezoid, which is a polygon not having less sides than a quadrangle. The first photovoltaic power generation element is, for example, an isosceles triangle, and the second photovoltaic power generation element is, for example, an isosceles trapezoid.

Abstract: A solar cell is formed to have a silicon semiconductor substrate of a first conductive type; an emitter layer having a second conductive type opposite the first conductive type and formed on a first surface of the silicon semiconductor substrate; a back surface field layer having the first conductive type and formed on a second surface of the silicon semiconductor substrate opposite to the first surface; and wherein the emitter layer includes at least a first shallow doping area and the back surface field layer includes at least a second shallow doping area, and wherein a thickness of the first shallow doping area of the emitter layer is different from a thickness of the second shallow doping area of the back surface field layer.

Abstract: A multiple-wavelength opto-electronic device may include a substrate and a plurality of active optical devices carried by the substrate and operating at different respective wavelengths. Each optical device may include a superlattice comprising a plurality of stacked groups of layers, and each group of layers may include a plurality of stacked semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon.

Abstract: Hemispheres and spheres are formed and employed for a plurality of applications. Hemispheres are employed to form a substrate having an upper surface and a lower surface. The upper surface includes peaks of pillars which have a base attached to the lower surface. The peaks have a density defined at the upper surface by an array of hemispherical metal structures that act as a mask during an etch to remove substrate material down to the lower surface during formation of the pillars. The pillars are dense and uniform and include a microscale average diameter. The spheres are formed as independent metal spheres or nanoparticles for other applications.

Abstract: Hemispheres and spheres are formed and employed for a plurality of applications. Hemispheres are employed to form a substrate having an upper surface and a lower surface. The upper surface includes peaks of pillars which have a base attached to the lower surface. The peaks have a density defined at the upper surface by an array of hemispherical metal structures that act as a mask during an etch to remove substrate material down to the lower surface during formation of the pillars. The pillars are dense and uniform and include a microscale average diameter. The spheres are formed as independent metal spheres or nanoparticles for other applications.

Abstract: There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

Abstract: A photodetector is provided, comprising: a radiation-absorbing semiconductor region and a collection semiconductor region separated by and each in contact with a barrier semiconductor region; wherein, at least in the absence of an applied bias voltage, the band gap between the valence band energy and the conduction band energy of the barrier semiconductor region is offset from the band gap between the valence band energy and the conduction band energy of the radiation-absorbing semiconductor region so as to form an energy barrier between the radiation-absorbing semiconductor region and the collection semiconductor region which resists the flow of minority carriers from the radiation-absorbing semiconductor region to the collection semiconductor region. Also provided is a method of manufacturing a photodetector.

Abstract: An infrared detector having a hole barrier region adjacent to one side of an absorber region, an electron barrier region adjacent to the other side of the absorber region, and a semiconductor adjacent to the electron barrier.

Abstract: Radiations detectors with angled walls and methods of fabrication are provided. One radiation detector module includes a plurality of sensor tiles configured to detect radiation. The plurality of sensor tiles have (i) top and bottom edges defining top and bottom surfaces of the plurality of sensor tiles, (ii) sidewall edges defining sides of the plurality of sensor tiles, and (iii) corners defined by the top and bottom edges and the sidewall edges. The radiation detector module also has at least one beveled surface having an oblique angle, wherein the beveled surface includes beveling of at least one of top or bottom edges, the side wall edges, or the corners.

Abstract: Solar cell structures that have improved carrier collection efficiencies at a heterointerface are provided by low temperature epitaxial growth of silicon on a III-V base. Additionally, a solar cell structure having improved open circuit voltage includes a shallow junction III-V emitter formed by epitaxy or diffusion followed by the epitaxy of SixGe1-x passivated by amorphous SiyGe1-y:H.

Abstract: A dye-sensitized solar cell can include a plurality of a plasmon-forming nanostructures. The plasmon-forming nanostructures can include a metal nanoparticle and a semiconducting oxide on a surface of the metal nanoparticle.

Abstract: An optoelectronic device and method for fabricating optoelectronic device, comprising: forming a quantum dot layer on a substrate including at least one electronically conductive layer, including a plurality of quantum dots which have organic capping layers; and removing organic capping layers from the quantum dots of the quantum dot layer by physically treating the quantum dot layer, the physical treatment including both thermal treatment and plasma processing.

Abstract: A rod-shaped semiconductor device having a light-receiving or light-emitting function is equipped with a rod-shaped substrate made of p-type or n-type semiconductor crystal, a separate conductive layer which is formed on a part of the surface of the substrate excluding a band-shaped part parallel to the axis of the substrate and has a different conduction type from the conduction type of the substrate, a pn-junction formed with the substrate and separate conductive layer, a band-shaped first electrode which is formed on the surface of the band-shaped part on the substrate and ohmic-connected to the substrate, and a band-shaped second electrode which is formed on the opposite side of the first electrode across the shaft of said substrate and ohmic-connected to the separate conductive layer.

Abstract: An electro-optic device is disclosed. The electro-optic device includes an insulating layer, a first semiconducting region disposed above the insulating layer and being doped with doping atoms of a first conductivity type, a second semiconducting region disposed above the insulating layer and being doped with doping atoms of a second conductivity type and an electro-optic active region disposed above the insulating layer and between the first semiconducting region and the second semiconducting region. The electro-optic active region includes a first partial active region and a second partial active region and an insulating structure in between. The insulating structure extends perpendicular to the surface of the insulating layer such that there is no overlap of the first partial active region and the second partial active region in the direction perpendicular to the surface of the insulating layer. A method for manufacturing is also disclosed.

Abstract: Nanostructures and photovoltaic structures are disclosed. A nanostructure according to one embodiment includes an array of nanocables extending from a substrate, the nanocables in the array being characterized as having a spacing and surface texture defined by inner surfaces of voids of a template; an electrically insulating layer extending along the substrate; and at least one layer overlaying the nanocables. A nanostructure according to another embodiment includes a substrate; a portion of a template extending along the substrate, the template being electrically insulative; an array of nanocables extending from the template, portions of the nanocables protruding from the template being characterized as having a spacing, shape and surface texture defined by previously-present inner surfaces of voids of the template; and at least one layer overlaying the nanocables.

Abstract: Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

Abstract: A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.

Abstract: Disclosed is a solar battery using a silicon semiconductor, having a high quantum-conversion efficiency, requiring few number of production steps during manufacturing, and capable of being recycled in view of environmental load and material recycling. Specifically, the solar battery has a basic structure of P-SN-N junction in which refined silicon clusters are inserted in P-N junction, and includes a quantum dot layer having a multiple energy level structure whose energy level is between an energy level of a valence band and an energy level of a conduction band. The quantum dot layer includes a periodic arrangement of silicon quantum dots formed of silicon clusters of 2.5 nm or less in average particle diameter and the distance between the quantum dots is 1 nm or less.

Abstract: A photovoltaic device is presented including one or more cell units. The photovoltaic device comprises a semiconductor substrate having a patterned light collecting surface defining an array of spaced-apart substantially parallel first grooves. Each of these first grooves has a bottom portion, comprising a bottom surface and side walls extending from the bottom portion and being substantially perpendicular to the surface of the device. A heavily doped semiconductor layer in the form of spaced-apart regions is located at the bottom surfaces of the first grooves respectively. Further improvement of performance is obtained by deposition of thin metal lines on top of the heavily doped spaced apart lines.

Abstract: [The PROBLEMS] A solar cell capable of preventing scratches from occurring on a junction portion between a semiconductor layer and a semiconductor substrate, and capable of suppressing deterioration of conversion efficiency is provided.

Abstract: Disclosed is a method for manufacturing semiconductor devices. Said method includes: a supply step in which a process liquid (19) that oxidizes and dissolves a target substrate (20) to be treated is supplied to the surface of said substrate (20) to be treated; a positioning step in which a mesh-like transferring member (10b) provided with a catalyst material is positioned near or in contact with the surface of the substrate (20) to be treated; and a concave or convex forming step in which a concave or convex is formed on the surface of the substrate (20) to be treated via the aforementioned supply and positioning steps. As opposed to existing manufacturing methods, which manufacture semiconductor devices provided with semiconductor substrates with highly arbitrary (i.e.

Abstract: Provided are an epitaxial wafer, a photodiode, and the like that include an antimony-containing layer and can be efficiently produced such that protruding surface defects causing a decrease in the yield can be reduced and impurity contamination causing degradation of the performance can be suppressed. The production method includes a step of growing an antimony (Sb)-containing layer on a substrate 1 by metal-organic vapor phase epitaxy using only metal-organic sources; and a step of growing, on the antimony-containing layer, an antimony-free layer including a window layer 5, wherein, from the growth of the antimony-containing layer to completion of the growth of the window layer, the growth is performed at a growth temperature of 425° C. or more and 525° C. or less.

Abstract: A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer, wherein the quantum material layer includes a plurality of alternating quantum well layers and barrier layers epitaxially grown on the bulk substrate layer. The method further includes applying at least one frontside common electrical contact to a frontside of the quantum well wafer, bonding a transparent substrate to the frontside of the quantum well wafer, thinning the bulk substrate layer of the quantum well wafer, and etching the quantum material layer to form quantum well facets that define at least one pyramidal quantum well stack. A backside electrical contact may be applied to the pyramidal quantum well stack. In one embodiment, a plurality of quantum well stacks is bonded to a read-out integrated circuit of a focal plane array.

Abstract: A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

Abstract: A thin-film photoelectric conversion device includes a crystalline germanium photoelectric conversion layer having improved open circuit voltage, fill factor, and photoelectric conversion efficiency for light having a longer wavelength. The photoelectric conversion device comprises a first electrode layer, one or more photoelectric conversion units, and a second electrode layer sequentially stacked on a substrate, wherein each of the photoelectric conversion units comprises a photoelectric conversion layer arranged between a p-type semiconductor layer and an n-type semiconductor layer. At least one of the photoelectric conversion units includes a crystalline germanium photoelectric conversion layer comprising a crystalline germanium semiconductor that is substantially intrinsic or weak n-type and is essentially free of silicon.

Abstract: A method for fabricating a dye-sensitized solar cell is provided. The dye-sensitized solar cell includes a photo electrode including (a) mixing a TiO2 powder, a Zn-containing compound and an alkaline aqueous solution to form a mixture and performing a thermal process on the mixture to form a Zn-doped TiO2 powder; (b) mixing a binder solution with the Zn-doped TiO2 powder to form a paste; (c) coating the paste on a first electrode, and the paste is sintered to form a Zn-doped TiO2 porous layer, wherein the Zn-doped TiO2 porous layer and the first electrode construct a photo electrode; (d) disposing a second electrode opposite to the photo electrode after a dye is absorbed by the Zn-doped TiO2 porous layer; and (e) disposing an electrolyte between the photo electrode and the second electrode.

Abstract: A solar cell includes a silicon semiconductor substrate of a first conductivity type. The substrate has a front surface and a rear surface, of which the front surface is arranged for capturing radiation energy. The rear surface includes a plurality of first electric contacts and a plurality of second electric contacts. The first and second electric contacts are arranged in alternation adjacent to each other. Each first electric contact is a heterostructure of a first type as contact for minority charge carriers, and the front surface of the silicon semiconductor substrate includes a highly doped silicon front surface field layer. The conductivity of the front surface field layer is the first conductivity type.

Abstract: An optical semiconductor device is disclosed including an active region including an active layer and a diffraction grating having a ?/4 phase shift; passive waveguide regions each including a passive waveguide and a diffraction grating, disposed on the side of an emission facet and on the side of a rear facet sandwiching the active region between the passive waveguide regions, respectively; and an anti-reflection coating applied on the emission facet, wherein the passive waveguide region on the side of the emission facet has a length shorter than a length of the passive waveguide region on the side of the rear facet side.

Abstract: A method for producing a thin-film solar cell with a cell level integrated bypass diode includes forming at least three series-connected solar cells, each cell being a laminated structure including semiconducting material of first and second types, a front electrode in contact with the material of the first type, and a back electrode in contact with the material of the second type. The bypass diode is formed by total separation from a selected parent cell. The material of the first type of the diode is connected to the material of the second type of any one chosen solar cell in the array. The material of the second type of the diode is connected with the material of the first type of the one chosen solar cell in the array so that the diode is connected in parallel and in opposition to the one chosen solar cell.