Abstract: A thin-film solar cell and a method for manufacturing the same are presented, in which the dopant concentration turns low in a sloping way. The solar cell includes a substrate, a first contact region, a photoelectric conversion layer, and a second contact region. The first contact region a photoelectric conversion layer, and a second contact region are disposed on the substrate. At least one of the first contact region and the second contact region contains an N-type dopant, and the concentration of the N-type dopant is decreased gradually in a direction towards the photoelectric conversion layer. Through the thin-film solar cell and the method for manufacturing the same, the conversion efficiency of the solar cell is improved, and the thin-film solar cell and the manufacturing method are capable of being integrated with an existing manufacturing process of a solar cell, thereby simplifying the manufacturing process and reducing the cost.

Abstract: A flexible solar cell is assembled by forming a TiO2 patterned layer on a flexible substrate electrode. Quantum dots (QDs) are formed on the TiO2 patterned layer. A gasket is disposed between the flexible substrate electrode and a flexible counter electrode forming a sandwich. Electrolyte and sealant are injected between the substrate electrode and flexible counter electrode to form the flexible solar cell.

Abstract: CdSe-quantum dots are formed on a TiO2 patterned layer by chemical deposition from a solution of aminotriacetic acid/cadmium (NTA/Cd) and sodium selenosulfate. CdSe-quantum dots are useful as sensitizers for solar cells. The conversion efficiency of light of light power to electric power is enhanced by adjusting the ratio of potassium aminotriacetate to cadmium (NTA/Cd) as well as the chemical bath deposition (CBD) temperature and time.

Abstract: A first shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to a photodetector while a second shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to other electrical components in a pixel. The first and second shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer that is filled with a dielectric material. An isolation layer having the second conductivity is disposed only along a portion of a bottom and only along a sidewall of the trench immediately adjacent to the photodetector. The isolation layer is not disposed along the other portion of the bottom and along the other sidewall of the trench adjacent the photodetector. The isolation layer is not disposed along the bottom and sidewalls of the trench adjacent to the other electrical components.

Abstract: Processes for making a solar cell by depositing various layers of components on a substrate and converting the components into a thin film photovoltaic absorber material. Processes of this disclosure can be used to control the stoichiometry of metal atoms in making a solar cell for targeting a particular concentration and providing a gradient of metal atom concentration. A selenium layer can be used in annealing a thin film photovoltaic absorber material.

Abstract: In one example, a method for fabricating a solar cell comprising a first electrode, a first-type layer, an intrinsic layer, a second-type layer and a second electrode is disclosed. The method comprising forming a second-type layer including an amorphous silicon (Si) carbide thin film by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H2) gas, silane (SiH4) gas, diborane (B2H6) and ethylene (C2H4) gas, wherein the ethylene (C2H4) gas includes 60% hydrogen gas diluted ethylene gas, the diborane gas is 97% hydrogen gas diluted diborane gas, the mixed gas includes 1 to 1.2% ethylene gas and 6 to 6.5% diborane gas.

Abstract: An efficient and low-cost method is intended for forming a flexible nanostructured material suitable for use as an active element of a photovoltaic panel. The method consists of evaporating a colloidal solution, which contains nanoparticles of various sizes and/or masses, from a flat surface of a rotating body on which the solution forms a thin and easily vaporizable layer, and simultaneously releasing the nanoparticles from the solution for their free flight through a gaseous medium toward the flexible substrate. As a result, the particles of different sizes and/or types of material are deposited onto the flexible substrate in a predetermined sequence that corresponds to the magnitude of resistance experienced by the nanoparticles during their free flight.

Abstract: The present invention discloses an absorber composition and photovoltaic device (PV) using the composition comprising nanoparticles and/or sintered nanoparticles comprising compounds having the formula MAxMByMCz(LAaLBb)4 where MA, MB and MC comprise elements chosen from the group consisting of Fe, Co, Ni, Cu, Zn, Cd, Sn and Pb, LA and LB are chalcogens and x is between 1.5 and 2.2, y and z are independently the same or different and are between 0.5 and 1.5 and (a+b)=1. Particularly preferred synthetic routes to uniform thin films in PV devices comprising sintered nanoparticles of Cu2ZnSnSe4 and Cu2ZnSnS4 are disclosed.

Abstract: A bispectral detector comprising upper and lower semiconductor layers of a first conductivity type in order to absorb a first and a second electromagnetic spectrum, separated by an intermediate layer that forms a barrier; semiconductor zones of a second conductivity type implanted in upper layer and lower layer and each implanted at least partially in the bottom of an opening that passes through upper layer and intermediate layer; and conductor elements connected to semiconductor zones. At least that part of each opening that passes through upper layer is separated from the latter by a semiconductor cap layer: whereof the concentration of dopants of the second conductivity type is greater than 1017 cm?3; and whereof the thickness is chosen as a function of said concentration so that it exceeds the minority carrier diffusion length in the cap layer.

Abstract: Provided is an infrared light detector 100 wherein a light coupling mechanism 110 is configured by a metal thin film or metal thin plate in which a plurality of windows apart from each other are formed. Each of the windows is formed by multangular shapes in which a part of the internal angles are obtuse angles. The plurality of windows are periodically arrayed in postures having translational symmetry in at least two directions. The array cycle p of the plurality of windows are set according to a wavelength A? of the infrared light of a substrate including a first electronic layer 110 so as to fall within a range with reference to a value at which a perpendicular oscillating electric field component in a first electronic region 10 indicates a peak value.

Abstract: In general, the present invention discloses at least one trench isolation region formed in a semiconductor substrate to electrically and/or optically isolate at least one active region from another active region. The at least one trench isolation region comprises a bottom portion and first and second trench sidewalls. At least one trench sidewall is adjacent a doped region. The at least one sidewall adjacent a doped region has a higher impurity dopant concentration than impurity doped regions surrounding the at least one trench isolation region.

Abstract: Disclosed herein is a method of fabricating a CIS or CIGS thin film, comprising: forming, on a substrate, a seed particle layer comprising copper-indium-compound seed particles comprising copper (Cu); indium (In); and at least one selected from the group consisting of gallium (Ga), sulfur (S) and selenium (Se), applying, on the seed particle layer, a water-soluble precursor solution comprising: a water-soluble copper (Cu) precursor; a water-soluble indium (In) precursor; and at least one selected from the group consisting of a water-soluble gallium (Ga) precursor, a water-soluble sulfur (S) precursor and a water-soluble selenium (Se) precursor, and forming a thin film at high temperature.

Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.

Abstract: A multi-junction group III-V compound semiconductor solar cell and fabrication method thereof forms a 2D photonic crystal structure in the topmost window layer of the stacked solar cell units by etching holes in the window layer. The 2D photonic crystal structure causes omni-directional reflection of the sunlight along any transverse plane of the 2D photonic crystal structure and directs the oblique sunlight to enter the bottom surface of the holes, thereby increasing the amount of incident light. By applying the property that the 2D photonic crystal structure causes a wider range of wavelengths to have higher transmission efficiency at the window layer to the multi-junction group III-V compound semiconductor solar cell, energy conversion efficiency may be effectively increased.

Abstract: A back metal electrode, a bottom cell using microcrystalline silicon for a photoelectric conversion layer, a front cell using amorphous silicon for a photoelectric conversion layer, and a transparent front electrode are formed in this order on a supporting substrate. At least one of the concentration of impurities contained in the front photoelectric conversion layer and the concentration of impurities contained in the bottom photoelectric conversion layer is controlled such that the concentration of impurities in the bottom photoelectric conversion layer is higher than the concentration of impurities in the front photoelectric conversion layer. Impurities do not include a p-type dopant or an n-type dopant but are any one, two, or all of carbon, nitrogen, and oxygen.

Abstract: Techniques for increasing conductivity of graphene films by chemical doping are provided. In one aspect, a method for increasing conductivity of a graphene film includes the following steps. The graphene film is formed from one or more graphene sheets. The graphene sheets are exposed to a solution having a one-electron oxidant configured to dope the graphene sheets to increase a conductivity thereof, thereby increasing the overall conductivity of the film. The graphene film can be formed prior to the graphene sheets being exposed to the one-electron oxidant solution. Alternatively, the graphene sheets can be exposed to the one-electron oxidant solution prior to the graphene film being formed. A method of fabricating a transparent electrode on a photovoltaic device from a graphene film is also provided.

Abstract: Embodiments of the invention also generally provide a solar cell formation process that includes the formation of metal contacts over heavly doped regions that are formed in a desired pattern on a surface of a substrate. Embodiments of the invention also provide an inspection system and supporting hardware that is used to reliably position a similarly shaped, or patterned, metal contact structure on the patterned heavily doped regions to allow an Ohmic contact to be made. The metal contact structure, such as fingers and busbars, are formed on the heavily doped regions so that a high quality electrical connection can be formed between these two regions.

Abstract: An apparatus including a first electrode; a second electrode; a nano-scale channel between the first electrode and the second electrode wherein the nano-scale channel has a first state in which an electrical impedance of the nano-scale channel is relatively high and a second state in which the electrical impedance of the nano-scale channel is relatively low; dielectric adjacent the nano-scale channel; and a gate electrode adjacent the dielectric configured to control a threshold number of quanta of stimulus, wherein the nano-scale channel is configured to switch between the first state and the second state in response to an application of a quantum of stimulus above the threshold number of quanta of stimulus.

Abstract: A photovoltaic device includes a composition modulated semiconductor structure including a p-doped first semiconductor material layer, a first intrinsic compositionally-graded semiconductor material layer, an intrinsic semiconductor material layer, a second intrinsic compositionally-graded semiconductor layer, and an n-doped first semiconductor material layer. The first and second intrinsic compositionally-graded semiconductor material layers include an alloy of a first semiconductor material having a greater band gap width and a second semiconductor material having a smaller band gap with, and the concentration of the second semiconductor material increases toward the intrinsic semiconductor material layer in the first and second compositionally-graded semiconductor material layers.

Abstract: The linear semiconductor substrate 1 or 2 of the present invention comprises at least one desired thin film 4 formed on a linear substrate 3 having a length ten or more times greater than a width, thickness, or diameter of the linear substrate itself. Adopting semiconductor as the thin film 4 forms a linear semiconductor thin film. The linear semiconductor substrate 1 or 2 of the present invention is produced by utilizing a fiber-drawing technique which is a fabricating technique of optical fibers.

Abstract: A germanium (Ge) photodiode array on a glass substrate is provided with a corresponding fabrication method. A Ge substrate is provided that is either not doped or lightly doped with a first dopant. The first dopant can be either an n or p type dopant. A first surface of the Ge substrate is moderately doped with the first dopant and bonded to a glass substrate top surface. Then, a first region of a Ge substrate second surface is heavily doped with the first dopant. A second region of the Ge substrate second surface is heavily doped with a second dopant, having the opposite electron affinity than the first dopant, forming a pn junction. An interlevel dielectric (ILD) layer is formed overlying the Ge substrate second surface and contact holes are etched in the ILD layer overlying the first and second regions of the Ge substrate second surface. The contact holes are filled with metal and metal pads are formed overlying the contact holes.

Abstract: An integrated circuit structure includes a substrate having a top surface; a first conductive layer over and contacting the top surface of the substrate; a dielectric layer over and contacting the first conductive layer, wherein the dielectric layer includes an opening exposing a portion of the first conductive layer; and a proof-mass in the opening and including a second conductive layer at a bottom of the proof-mass. The second conductive layer is spaced apart from the portion of the first conductive layer by an air space. Springs anchor the proof-mass to portions of the dielectric layer encircling the opening. The springs are configured to allow the proof-mass to make three-dimensional movements.

Abstract: A photoelectric conversion semiconductor layer is provided which is capable of providing a potential gradient in the thickness direction, can be manufactured at a lower cost than a layer formed by vacuum film forming, and capable of providing high photoelectric conversion efficiency. The photoelectric conversion semiconductor layer is a layer that generates a current by absorbing light and is formed of a particle layer in which a plurality of particles is disposed in plane and thickness directions. Preferably, the photoelectric conversion semiconductor layer includes, as the plurality of particles, a plurality of types of particles having different band-gaps, and the potential in the thickness direction of the layer is distributed.

Abstract: It is an object to provide an image sensor having a sufficiently-large ratio of a surface area of a light-receiving section to an overall surface area of one pixel.

Abstract: A integrated solar roof tile includes a curved substrate, a silicon-nitride (SiN) film, a first electrode, an amorphous silicon film, a second electrode, a conducting wire layer and a protecting film. The curved substrate includes a top surface and a cross-sectional surface. The SiN film covers the top surface of the curved substrate. The first electrode is disposed on the SiN film. The amorphous silicon film covers the SiN film and the first electrode. The second electrode is disposed on the amorphous silicon film and electrically insulating from the first electrode. The conducting wire layer covers the amorphous silicon film and is electrically connected to the second electrode. The protecting film covers on the conducting wire layer.

Abstract: Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first thickness correlated to the first width; performing an implantation process through the opening using an implantation energy correlated to the first thickness thereby forming a first doped isolation feature; forming a light sensing feature adjacent to the first doped isolation feature, the light sensing feature having a second width; and thinning the substrate from the back side so that the substrate has a second thickness that does not exceed twice a depth of the first doped isolation feature. A pixel size is substantially equal to the first and second widths.

Abstract: Solar cells or photodetectors having one or more single-crystal shell layers conformally deposited on Ge nano-wires are provided. This approach can provide higher efficiency and/or reduced material cost compared to conventional planar approaches for multi-junction solar cells having the same thickness of active solar absorption materials. Shell layers deposited on the Ge nano-wires and including pn junctions can be grown such that they end up with single-crystal faceted tips, which can significantly improve optical collection efficiency and can improve the electron collection efficiency because of the high crystal quality.

Abstract: The solar cell module having a preferable edge space that prevents characteristics of a solar cell such as conversion efficiency from being deteriorated without making processes complicated is provided. In a method for manufacturing a solar cell module including a substrate glass, a first layer formed on the substrate glass and a second layer formed on the first layer, the method includes a step of forming a first edge space having a first width by removing the first layer and the second layer by the first width from an end part of the glass substrate and a step of forming a second edge space by removing only the second layer by a second width from the end part of the glass substrate, and the width of the second edge space is larger than the width of the first edge space.

Abstract: Imager devices, systems including the imager devices and methods of forming the imager devices are provided. The imager device has a substrate with first and second opposing sides. The imager also includes an array of imager pixels at the first side of the substrate, each including a photoconversion device. An antireflective material is on the second side of the substrate and a dielectric material is over the antireflective material. A light guide material is disposed within a plurality of openings in the dielectric material and optically aligned with a respective photoconversion device.

Abstract: A high operating temperature split-off band infrared (SPIP) detector having a double and/or graded barrier on either side of the emitter is provided. The photodetector may include a first and second barrier and an emitter disposed between the first and second barriers so as to form a heterojunction at each interface between the emitter and the first and second barriers, respectively. The emitter may be of a first semiconductor material having a split-off response to optical signals, while one of the first or the second barriers may include a double barrier having a light-hole energy band level that is aligned with the split-off band energy level of the emitter. In addition, the remaining barrier may be graded.

Abstract: In accordance with an example embodiment of the present invention, an apparatus is provided, including a plurality of photon sensing layers arranged on top of each other, and an intermediate layer between each two adjacent sensing layers, the sensing layers being of graphene, and each intermediate layer being configured to prevent a respective color component of light from proceeding into the photon sensing layer next to it.

Abstract: An apparatus and methods for solar conversion using nanoscale cometal structures are disclosed herein. The cometal structures may be coaxial and coplanar. A nanoscale optics apparatus for use as a solar cell comprises a plurality of nanoscale cometal structures each including a photovoltaic material located between a first electrical conductor and a second electrical conductor. A method of fabricating solar cells comprises preparing a plurality of nanoscale planar structures; coating a plurality of planar surfaces of the plurality of planar structures with a photovoltaic semiconductor while leaving space between the plurality of planar surfaces; and coating the photovoltaic semiconductor with an outer electrical conductor layer, wherein a portion of the outer electrical conductor layer is located between the planar structures to form coplanar structures.

Abstract: A Group III-V solar cell and a manufacturing method thereof, wherein, three amorphous silicon layers are formed on a substrate, which includes a first type amorphous silicon layer, an intrinsic amorphous silicon layer, and a second type amorphous silicon layer. The lattice characteristics of amorphous silicon layer are utilized, and a Group III-V polycrystalline semiconductor layer is formed on said amorphous silicon layer, such that amorphous silicon and Group III-V material are able to perform photoelectric conversion simultaneously in raising photoelectric conversion efficiency of said Group III-V solar cell effectively by means of a direct energy gap of said Group III-V material.

Abstract: The invention relates generally to methods of repairing defects in thin films. Void defects in thin films are repaired using methods that take advantage of substrate manufacturing protocols rather than conventional superstrate manufacturing protocols. Methods described herein are simple, robust and compatible with existing processes and equipment used in the manufacture of superstrate devices.

Abstract: A method for manufacturing a solar cell according to an exemplary embodiment includes: forming a first doping film on a substrate; patterning the first doping film so as to form a first doping film pattern and so as to expose a portion of the substrate; forming a diffusion prevention film on the first doping film pattern so as to cover the exposed portion of the substrate; etching the diffusion prevention film so as to form spacers on lateral surfaces of the first doping film pattern; forming a second doping film on the first doping film pattern so as to cover the spacer and exposed substrate; forming a first doping region on the substrate surface by diffusing an impurity from the first doping film pattern into the substrate; and forming a second doping region on the substrate surface by diffusing an impurity from the second doping film pattern into the substrate.

Abstract: Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have one or more intermediate electrical contacts that are physically and electrically connected to sidewalls of the array of nanostructures. The contacts may allow different photo-active regions of the optoelectronic device to be independently controlled. For example, one color light may be emitted or detected independently of another using the same group of one or more nanostructures. The optoelectronic device may be a pixilated device that may serve as an LED display or imaging sensor. The pixilated device may have an array of nanostructures with alternating rows and columns of sidewall electrical contacts at different layers. A pixel may be formed at the intersection of a row contact and a column contact. As one example, a single group of one or more nanostructures has a blue sub-pixel, a green sub-pixel, and a red sub-pixel.

Abstract: A rod-shaped semiconductor device having a light-receiving or light-emitting function is equipped with a rod-shaped substrate made of p-type or n-type semiconductor crystal, a separate conductive layer which is formed on a part of the surface of the substrate excluding a band-shaped part parallel to the axis of the substrate and has a different conduction type from the conduction type of the substrate, a pn-junction formed with the substrate and separate conductive layer, a band-shaped first electrode which is formed on the surface of the band-shaped part on the substrate and ohmic-connected to the substrate, and a band-shaped second electrode which is formed on the opposite side of the first electrode across the shaft of said substrate and ohmic-connected to the separate conductive layer.

Abstract: Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have a top electrical contact that is physically and electrically connected to sidewalls of the array of nanostructures (e.g., nanocolumns). The top electrical contact may be located such that light can enter or leave the nanostructures without passing through the top electrical contact. Therefore, the top electrical contact can be opaque to light having wavelengths that are absorbed or generated by active regions in the nanostructures. The top electrical contact can be made from a material that is highly conductive, as no tradeoff needs to be made between optical transparency and electrical conductivity. The device could be a solar cell, LED, photo-detector, etc.

Abstract: The present invention provides a HPT having high sensitivity and extensive wavelength band characteristics. The collector and barrier layer (5) is formed on the photo-absorption layer (6), wherein the energy level in the conduction band is higher than that of the photo-absorption layer (6), the energy level in the valence band is almost equal to or higher than that of the photo-absorption layer (6) and is a relatively wider gap semiconductor than the photo-absorption layer. The base layer (4) formed on the collector and barrier layer (5), is a relatively narrow gap as compared with the collector and barrier layer (5), wherein the energy level in the conduction band is equal to or higher than that of the collector and barrier layer (5) in the boundary of the collector and barrier layer (5).

Abstract: A detection device comprising a photodetector comprising a first semiconductor layer through which light first enters the photodetector; the first semiconductor layer to semiconductor material crystal lattice which terminates at an interface; the discontinuity of the semiconductor crystal lattice at the interface creating a first interface charge; the first semiconductor layer being an absorption layer in which photons in a predetermined wavelength range are absorbed and create photogenerated carriers; and a second polar semiconductor layer deposited on the crystal lattice of the first semiconductor layer, the second polar semiconductor being substantially transparent to light in the predetermined wavelength range, the second polar semiconductor layer having a total polarization different from the first semiconductor layer so that a second interface charge is induced at the interface between the first and second semiconductor layers; the induced second interface charge reduces or substantially cancels the fir

Abstract: Disclosed is a solar cell and a method for manufacturing the same, which facilitates to improve cell efficiency by smoothly drifting carrier such as hole or electron generated in a semiconductor wafer to first and second electrodes, the solar cell comprising a semiconductor wafer having a predetermined polarity; a first semiconductor layer on one surface of the semiconductor wafer; a first transparent conductive layer on the first semiconductor layer; a first electrode on the first transparent conductive layer; a second semiconductor layer on the other surface of the semiconductor wafer, wherein the second semiconductor layer is different in polarity from the first semiconductor layer; a second transparent conductive layer on the second semiconductor layer; a second electrode on the second transparent conductive layer; and at least one of first and second auxiliary layers, wherein the first auxiliary layer is formed between the first semiconductor layer and the first transparent conductive layer so as to smoo

Abstract: A method of manufacturing an image sensor having a plurality of pixels, each pixel having a photoelectric converter including an accumulation region, and a transfer gate, the accumulation region extending under a corresponding transfer gate, the plurality of pixels including a plurality of pixel groups, each pixel group including N adjacent pixels, and the channels of the N adjacent pixels, in each pixel group, being configured to transfer the charges of the N adjacent pixels away from each other, the method comprising a step of forming a resist pattern having one opening corresponding to each pixel group, and a step of forming a charge accumulation region for each of the N adjacent pixels by implanting ions into a substrate through the one opening of the resist pattern along N ion implantation directions so as to implant the ions under the transfer gate of each of the N adjacent pixels.

Abstract: Disclosed is a solar cell module wherein the stresses exerted on a solar cell module are relaxed. Specifically, disclosed is a solar cell module which comprises: a plurality of solar cell elements each including a light receiving surface and a rear surface positioned on a reverse side oppositely away from the light receiving surface; and leads connecting one of the solar cell elements and another adjacent solar cell element and including a connection portion connected to one surface of the one solar cell element. At least one of the solar cell elements has a wavy shape in a lengthwise direction of the connection portion.

Abstract: A semiconductor epitaxial structure includes a substrate; a semiconductor epitaxial stack layers formed on the substrate; and a plurality of semiconductor buffer layers deposited between the substrate and the semiconductor epitaxial layer with a gradually varied composition along one direction; wherein more than one of the semiconductor buffer layers have a patterned surface.

Abstract: One embodiment of the present invention provides a solar cell. The solar cell includes a photovoltaic structure, a transparent-conductive-oxide (TCO) layer situated above the photovoltaic structure, and a front-side metal grid situated above the TCO layer. The TCO layer is in contact with the front surface of the photovoltaic structure. The metal grid includes at least one of: Cu and Ni.

Abstract: An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

Abstract: A method for improving the overall quantum efficiency and output voltage in solar cells using spontaneous ordered semiconductor alloy absorbers to form a DOH below the front or above the back surface of the cell.

Abstract: A light-receiving element device capable of receiving near infrared to mid-infrared light of 1.7 ?m-3.5 ?m is provided. A substrate is formed of InP, and a superlattice light-receiving layer is formed of a superlattice of a type 2 junction formed by alternately being stacked a falling layer of a Group III-V compound semiconductor including In, Ga, As, N and a rising layer of a Group III-V compound semiconductor including Ga, As, Sb. The film thickness of the falling layer and the rising layer is each 3 nm-10 nm. The entire thickness of the superlattice light-receiving layer is 2 ?m-7 ?m. The lattice mismatch of the constituent film of the superlattice light-receiving layer to InP is ±0.2% or less.

Abstract: A rod-shaped semiconductor device having a light-receiving or light-emitting function is equipped with a rod-shaped substrate made of p-type or n-type semiconductor crystal, a separate conductive layer which is formed on a part of the surface of the substrate excluding a band-shaped part parallel to the axis of the substrate and has a different conduction type from the conduction type of the substrate, a pn-junction formed with the substrate and separate conductive layer, a band-shaped first electrode which is formed on the surface of the band-shaped part on the substrate and ohmic-connected to the substrate, and a band-shaped second electrode which is formed on the opposite side of the first electrode across the shaft of said substrate and ohmic-connected to the separate conductive layer.

Abstract: The optical device includes a waveguide and a light sensor on a base. The light sensor includes a light-absorbing medium configured to receive a light signal from the waveguide. The light sensor also includes field sources for generating an electrical field in the light-absorbing medium. The field sources are configured so the electrical field is substantially parallel to the base.