Abstract: The invention provides a light generating system (1000) comprising a LED module (100), a module support (200), and a connector element (300), wherein: the module support (200) comprises a first module support opening (230) for hosting at least part of a first connector element part (310); the LED module (100) comprises a LED support (120) and a plurality of LEDs (10) functionally coupled to the LED support (120), wherein the LED support (120) comprises a LED support opening (130) for hosting at least part of the first connector element part (310); and wherein the plurality of LEDs (10) are configured to generate light source light (11); the connector element (300) comprises the first connector element part (310), and wherein the first connector element part (310) comprises a first spring part (315); at least part of the first connector element part (310) penetrates through the first module support opening 230); and the LED support opening (130), the first connector element part (310), and the module support (

Abstract: A light emitting device including a plurality of element structures each including a submount, a light emitting element, and a light transmissive member, in this order. The light emitting device further includes a first cover member holding the element structures by covering lateral faces of each of the element structures.

Abstract: A display device and a method of fabricating the same are disclosed, the display device includes a first metal layer on a substrate; light emitting elements emitting light of a first color, each of the light emitting elements having a first end contacting the first metal layer; an insulating layer disposed on the first metal layer and including holes exposing a second end of each of the light emitting elements facing the first metal layer; and a light conversion layer disposed in at least one of the holes and overlapping the light emitting elements. The light conversion layer converts the light of the first color emitted from the light emitting elements into light of a second color.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, a p-side electrode, a plurality of n-side electrodes, a first insulating film, a p-side interconnect unit, and an n-side interconnect unit. The p-side interconnect unit is provided on the first insulating film to connect to the p-side electrode through a first via piercing the first insulating film. The n-side interconnect unit is provided on the first insulating film to commonly connect to the plurality of n-side electrodes through a second via piercing the first insulating film. The plurality of n-side regions is separated from each other without being linked at the second surface. The p-side region is provided around each of the n-side regions at the second surface.

Abstract: Disclosed is a light emitting module capable of representing improved heat radiation and improved light collection. there is provided a light emitting module. The light emitting module includes a metallic circuit board formed therein with a cavity, and a light emitting device package including a nitride insulating substrate attached in the cavity of the metallic circuit board, at least one pad part on the nitride insulating substrate, and at least one light emitting device attached on the pad part.

Abstract: In a first aspect of the present invention, a light-emitting diode includes a light-emitting element with a p-n junction, a first light-transmitting member including a phosphor and sealing the light-emitting element, and first and second covers disposed on opposite surfaces of the first light-transmitting member. It is disclosed that the first and second covers extend over edges of the opposite surfaces of the first light-transmitting member. In a second aspect of the present invention, a first cover disposed on a first parallel surface of a first light-transmitting member can be greater in thickness than a second cover. In some embodiments, it is disclosed that a second light-transmitting member with higher diffusion coefficient than the first light-transmitting member is disposed in contact with a first perpendicular surface of the first light-transmitting member.

Abstract: Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

Abstract: A light emitting module is disclosed. The light emitting module includes a lead frame body, lead frame, a heat spreader, an intermediate heat sink, and at least one light emitting element (LED). The lead frame body defines a cavity which accurately registers the heat spreader and includes optical or reflective walls surrounding the light emitting elements soldered on metallized traces of the heat spreader. The lead frame body encases and supports portions of the lead frame. The lead frame extends from outside the body into the cavity to accurately align with solder pads of the heat spreader. All the pre-aligned mechanical, thermal and electrical contacts are then soldered by solder reflow process under tight environmental control to prevent damage to the light emitting element. A robust, healthy 3-dimensional optical-electro-mechanical assembly having a very low thermal resistance in a thermal path from its light emitting element to its intermediate heatsink is created.

Abstract: A housing for supporting a light-emitting diode chip is disclosed. The housing includes a housing body made of non-fluoro-containing polymer and a surface coating layer covering at least a portion of the housing body. The surface coating layer is made of fluoropolymer dispersion and provided for reflecting light emitted from a light-emitting diode chip disposed on the housing body. A structure of light-emitting diode including the housing and a light-emitting diode chip is also disclosed.

Abstract: There is provided a wiring substrate. The wiring substrate includes: a heat sink; a first insulating layer on the heat sink; a wiring pattern on the first insulating layer, wherein the wiring pattern is configured to mount a light emitting element thereon; and a second insulating layer on the first insulating layer such that the wiring pattern is exposed from the second insulating layer.

Abstract: A semiconductor light emitting device is mounted on a support substrate. The support substrate is disposed in an opening in a carrier. In some embodiments, the support substrate is a ceramic tile and the carrier is a low cost material with a lateral extent large enough to support a lens molded over or attached to the carrier.

Abstract: A method for manufacturing a light-emitting case includes forming a flat panel light emitting diode, and covering the flat panel light emitting diode with transparent plastic material. The transparent plastic material has properties of flexibility, high gas-resistance and water-resistance. When the light-emitting case is forced, the shape of the light-emitting case can be changed.

Abstract: Embodiments include a light emitting device package. The light emitting device package comprises a housing including a cavity; a light emitting device positioned in the cavity; a lead frame including a first section electrically connected to the light emitting device in the cavity, a second section, which penetrates the housing, extending from the first section and a third section, which is exposed to outside air, extending from the second section; and a metal layer positioned on an area defined by a distance which is distant from the housing in the second section of the lead frame.

Abstract: Light emitting devices and methods of integrating micro LED devices into light emitting device are described. In an embodiment a light emitting device includes a reflective bank structure within a bank layer, and a conductive line atop the bank layer and elevated above the reflective bank structure. A micro LED device is within the reflective bank structure and a passivation layer is over the bank layer and laterally around the micro LED device within the reflective bank structure. A portion of the micro LED device and a conductive line atop the bank layer protrude above a top surface of the passivation layer.

Abstract: An SMT LED device includes an LED and a circuit board supporting the LED. A pair of first solder pads are formed on the circuit board and spaced from each other. The LED includes two solder slugs extending downwardly from a bottom the LED. A positioning hole is formed at each first solder pad corresponding a position of a corresponding solder slug. A second solder pad is received in the positioning hole. Each solder slug is received in one corresponding positioning hole and electrically connected to corresponding first and second solder pads by a reflow soldering process. The present disclosure also provides a method for manufacturing the SMT LED device.

Abstract: A chip on board light emitting diode (LED) device includes a LED device, a printed circuit board (PCB) and a dissipation unit array. The LED device includes a LED substrate, a first contact pad and a second contact pad above the LED substrate and a thermal layer formed on top surface of the LED device. The thermal layer includes a thermal conductive material. A printed circuit board (PCB) includes a PCB substrate with a thermal projection extending from surface of the PCB substrate, and a first and a second electrode pads above the PCB substrate. The thermal projection and the PCB substrate include the thermal conductive material. The dissipation unit array includes a plurality of dissipation units each disposed between the LED device and the PCB. The thermal layer is thermally coupled to the thermal projection via at least one dissipation unit. Each of the first and second contact pads is electrically coupled to the corresponding electrode pad via at least one dissipation unit.

Abstract: In the present invention, a semiconductor film is formed through a sputtering method, and then, the semiconductor film is crystallized. After the crystallization, a patterning step is carried out to form an active layer with a desired shape. The present invention is also characterized by forming a semiconductor film through a sputtering method, subsequently forming an insulating film. Next, the semiconductor film is crystallized through the insulating film, so that a crystalline semiconductor film is formed. According this structure, it is possible to obtain a thin film transistor with a good electronic property and a high reliability in a safe processing environment.

Abstract: Disclosed herein is a light emitting device module comprising: a heat transfer member having a cavity; first conductive layer and second conductive layer contacting the heat transfer member via an insulating layer, the first conductive layer and the second conductive layer being electrically isolated from each other in accordance with exposure of the insulating layer or exposure of the heat transfer member; and at least one light emitting diode electrically connected to the first conductive layer and second conductive layer, the at least one light emitting device is thermally contacted to an exposed portion of the heat transfer member, wherein the heat transfer member has an exposed portion disposed within the cavity between the first conductive layer and the second conductive layer.

Abstract: A method for manufacturing a solid-state imaging device. A solid-state image sensor is mounted on the semiconductor package support and electrically connected to first terminals and second terminals by bonding wires. The second terminals to which the bonding wires are connected are sealed with a sealing member. The optically-transparent member is thereafter disposed on the support member and the sealing member. The sealing member is cured to fix the optically transparent member.

Abstract: A light emitting device includes a package constituted by a molded article having a light emitting face, a bottom face, and a rear face, and a pair of leads partially embedded in the molded article, protrude from the bottom face, and have ends that bend toward either the light emitting face or the rear face. The molded article has a front protruding part that protrudes from the bottom face and includes a surface continuous with the light emitting face, the front protruding part being spaced apart from the rear face, and a rear protruding part that protrudes from the bottom face and includes a surface continuous with the rear face, the rear protruding part being spaced apart from the light emitting face, between the leads on the bottom face, the front protruding part being spaced apart from the rear protruding part.

Abstract: Disclosed is a light emitting apparatus. The light emitting apparatus includes a package body; first and second electrodes; a light emitting device electrically connected to the first and second electrodes and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers; and a lens supported on the package body and at least a part of the lens including a reflective structure. The package body includes a first cavity, one ends of the first and second electrodes are exposed in the first cavity and other ends of the first and second electrodes are exposed at lateral sides of the package body, and a second cavity is formed at a predetermined portion of the first electrode exposed in the first cavity.

Abstract: A semiconductor light-emitting device includes a lead frame, a semiconductor light-emitting element mounted on the top surface of the bonding region, and a case covering part of the lead frame. The bottom surface of the bonding region is exposed to the outside of the case. The lead frame includes a thin extension extending from the bonding region and having a top surface which is flush with the top surface of the bonding region. The thin extension has a bottom surface which is offset from the bottom surface of the bonding region toward the top surface of the bonding region.

Abstract: Embodiments of the present disclosure are directed towards passivation techniques and configurations for a flexible display. In one embodiment, a flexible display includes a flexible substrate, an array of display elements configured to emit or modulate light disposed on the flexible substrate, and a passivation layer including molecules of silicon (Si) bonded with oxygen (O) or nitrogen (N), the passivation layer being disposed on the array of display elements to protect the array of display elements from environmental hazards.

Abstract: Disclosed is a LED lighting apparatus with one or more swivel connections. The LED lighting apparatus includes a housing with at least one end, at least one light emitting diode extending along the housing and at least one end cap. The end cap has an opening with a sidewall to cap the end of the housing and a surface opposite the opening and spanning the sidewall. At least two pin connectors extend from the surface and are connectable to a standard fluorescent or incandescent light fixture. Various configurations are described such that the housing will rotate within the end caps with application of a rotational force after connection of the pin connectors to the light fixture to adjust the light output direction of the LED lighting apparatus.

Abstract: A light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and a light extraction structure that extracts light from the light emitting structure. The light extraction structure includes at least a first light extraction zone and a second light extraction zone, where a period and/or size of first concave and/or convex structures of the first light extraction zone is different from a period and/or size of second concave and/or convex structures of the second light extraction zone.

Abstract: The present invention relates to a method of forming an ohmic electrode in a semiconductor light emitting element, comprising: forming a semiconductor layer having a light emitting structure on a substrate, sequentially laminating a bonding layer, a reflective layer and a protective layer on the semiconductor layer, and forming an ohmic electrode by performing a heat treatment process to form ohmic bonding between the semiconductor layer and the bonding layer and to form an oxide film on at least a portion of the protective layer; and a semiconductor light emitting element using the ohmic electrode. According to the present invention, since a reflective layer is formed of Ag, Al and an alloy thereof with excellent light reflectivity, the light availability is enhanced. Further, since contact resistance between a semiconductor layer and a bonding layer is small, it is easy to apply large current for high power.

Abstract: A method for manufacturing a lighting device includes the steps of: preparing a substrate having at least one lighting chip, a frame for surrounding the lighting chip, and a cover body for covering one side of the frame; bonding the frame and the substrate so that the lighting chip is located within a region surrounded by the frame; and bonding the cover body and the frame so that the cover body and the frame cooperatively define a receptacle to cover the lighting chip. A bonding force between the cover body and the frame is configured to be smaller than a bonding force between the frame and the substrate so that when the cover body is separated from the frame, the bonding between the frame and the substrate is not destroyed.

Abstract: Embodiments of the present invention provide separate optical devices operable to couple to a separate LED, the separate optical device comprising an entrance surface to receive light from a separate LED when the separate optical device is coupled to the separate LED, an exit surface opposite from and a distance from the entrance surface and a set of sidewalls. The exit surface can have at least a minimum area necessary to conserve brightness for a desired half-angle of light projected from the separate optical device. Furthermore, each sidewall is positioned and shaped so that rays having a straight transmission path from the entrance surface to that sidewall reflect to the exit surface with an angle of incidence at the exit surface at less than or equal to a critical angle at the exit surface.

Abstract: According to one embodiment, in a semiconductor light emitting device, a first electrode is provided on a first surface of the semiconductor laminated body including a light emitting layer. A joint metal layer is provided on a second surface of the semiconductor laminated body opposed to the first surface of the semiconductor laminated body. A bonding metal layer covers a first surface of the joint metal layer on a side opposite to the semiconductor laminated body and is provided on a side of the second surface of the semiconductor laminated body. A substrate provided with a second electrode is bonded to the bonding metal layer. A layer having an etching resistance property to an etchant for etching the semiconductor laminated body is formed on a side of the surface of the bonding metal layer facing to the semiconductor laminated body.

Abstract: Disclosed is a light emitting device package. The light emitting device package includes a substrate including a recess, a light emitting chip on the substrate and a first conductive layer electrically connected to the light emitting chip. And the first conductive layer includes at least one metal layer electrically connected to the light emitting chip on an outer circumference of the substrate.

Abstract: A thin-film semiconductor component having a carrier layer and a layer stack which is arranged on the carrier layer, the layer stack containing a semiconductor material and being provided for emitting radiation, wherein a heat dissipating layer provided for cooling the semiconductor component is applied on the carrier layer. A component assembly is also disclosed.

Abstract: The present invention provides a chip module structure for particles protection. The structure includes a substrate. A chip is configured on the substrate, with a sensing area. A holder is disposed on the substrate, wherein the holder has a first rib. A transparent material is disposed on the holder, substantially aligning to the sensing area. A lens holder is disposed on the holder, and a lens is configured on the lens holder, substantially aligning to the transparent material and the sensing area. The lens has a second rib, wherein the second rib is disposed corresponding to the first rib for blocking particles entering into the chip module structure.

Abstract: A light emitter package having increased feature sizes for improved luminous flux and efficacy. An emitter chip is disposed on a submount with a lens that covers the emitter chip. In some cases, the ratio of the width of the light emitter chip to the width of said lens in a given direction is 0.5 or greater. Increased feature sizes allow the package to emit light more efficiently. Some packages include submounts having square dimensions greater than 3.5 mm used in conjunction with larger emitter chips. Materials having higher thermal conductivities are used to fabricate the submounts, providing the package with better thermal management.

Abstract: The present invention provides a holder on chip module structure including a substrate. A chip is configured on the substrate, with a sensing area. A holder is disposed on the substrate, wherein a portion of the holder is directly contacted to the chip to reduce the tilt between the chip and the holder. A transparent material is disposed on the holder, substantially aligning to the sensing area. A lens holder is disposed on the holder, and a lens is configured on the lens holder, substantially aligning to the transparent material and the sensing area.

Abstract: An embodiment of the present invention provides a light emitting device including: a transparent substrate; a wiring layer disposed on the transparent substrate; a plurality of light emitting diode chips disposed on the transparent substrate and electrically connected to the wiring layer; and an opposite substrate disposed on the transparent substrate to sandwich the light emitting diode chips and the wiring layer, wherein no wiring layer is disposed on a surface of the opposite substrate facing the light emitting diode chips.

Abstract: A light emitting device includes a body having a first recess; a barrier section having a second recess and a third recess, protruding upward over a bottom surface of the first recess, and dividing the bottom surface of the first recess into a first region and a second region; a first light emitting diode disposed in the first region; a second light emitting diode disposed in the second region; a first lead electrode disposed in the first region; a second lead electrode disposed in the second region; a first wire electrically connecting the first lead electrode to the second light emitting diode through the second recess; and a second wire electrically connecting the second lead electrode to the first light emitting diode through the third recess.

Abstract: A reliable semiconductor light-emitting device can include a wavelength converting material in a cavity mounting at least one semiconductor light-emitting chip. The device can also include an encapsulating resin to cover the wavelength converting material so as to emit a wavelength-converted light using light emitted from the chip. The wavelength converting material should include a transparent resin having a large thermal expansion coefficient to maintain a high thermal resistance, and the encapsulating resin is subject to cracks due to a high transparent resin. The semiconductor device can be configured to form a space between the wavelength converting material and the encapsulating resin so that each of the encapsulating resin and the wavelength converting material cannot contact with each other even under a high temperature.

Abstract: A system-in-a-package based flash memory card including an integrated circuit package occupying a small overall area within the card and cut to conform to the shape of a lid for the card. An integrated circuit may be cut from a panel into a shape that fits within and conforms to the shape of lids for a finished memory card, such as for example an SD Card. The integrated circuit package may be a system-in-a-package, a multi-chip module, or other arrangement where a complete electronic system is formed in a single package.

Abstract: A LED module with separate heat-dissipation and electrical conduction paths is disclosed, having a metal substrate; a plastic layer, including one or more hollow regions, and attached to the metal substrate; one or more conducting elements attached to the plastic layer; one or more LED chips positioned in the one or more hollow regions of the plastic layer and directly attached to the metal substrate; and a plurality of conducting wires for electrically connecting the one or more conducting elements and the one or more LED chips; wherein inner sides of the one or more hollow regions include one or more inclined surfaces each having an included angle with an upper surface of the metal substrate, and the included angle is between 90˜180 degrees.

Abstract: An optical semiconductor lighting apparatus includes a light emitting module including a semiconductor optical device, a housing to house the light emitting module, a first sealing body connected to a groove recessed in a polygonal or closed-curve shape of the housing, a first optical cover covering an outer edge of the groove and a top surface of the housing, a first rib formed on a top surface of the first sealing body along a forming direction of the first sealing body, and a pair of second ribs formed in parallel along both edges of a bottom surface of the first sealing body.

Abstract: Example embodiments are directed to a light emitting package having a structure that prevents variance in a depth of a cavity in which a chip is mounted and a method of fabricating the same. A light emitting package includes a package body including a first body including the cavity and a second body bonded to the first body. The cavity penetrates the first body. A first electrode and a second electrode separate from each other are on the package body. A first dielectric layer is between the package body and the first electrode and between the package body and the second electrode. A light emitting element is placed in the cavity and electrically connected to the first electrode and the second electrode. A method of fabricating the light emitting package includes forming the first body and the second body bonded to the first body through a dielectric layer, forming the cavity in the first body and forming the light emitting element in the cavity.

Abstract: A light-emitting device includes an element mounting substrate, a light-emitting element on the element mounting substrate, a case formed around the light-emitting element and having an opening on a light extraction side of the light-emitting device, and a sealing material filled in the opening of the case to seal the light-emitting element. The element mounting substrate includes an uneven portion configured to firmly attach the element mounting substrate to the case or the sealing material.

Abstract: High performance light emitting diode with vias. In accordance with a first embodiment of the present invention, an article of manufacture includes a light emitting diode. The light emitting diode includes a plurality of filled vias configured to connect a doped region on one side of the light emitting diode to a plurality of contacts on the other side of the light emitting diode. The filled vias may comprise less that 10% of a surface area of the light emitting diode.

Abstract: Reducing effects of thermal expansion in electronic components. An electronic device can include a support, such as a leadframe. An electronic component can be supported by the support. A first flexible layer can cover the electronic component. A second more rigid layer can cover the first layer. The first layer can be made from a material that is more flexible than the second layer thereby creating a mechanical buffer layer between the second layer and the electronic component such that the electronic component is protected from thermal expansion of the second portion caused by changes in temperature. The electronic component can be a laser. The first and second materials can be selected to disperse an optical emission from the optical transmitter.

Abstract: There is provided a semiconductor package that includes: a wiring board; a first semiconductor chip mounted on the wiring board; a second semiconductor chip mounted on the first semiconductor chip, wherein a size of second semiconductor chip is larger than that of the first semiconductor chip when viewed from a thickness direction of the semiconductor package; an insulating resin provided between the wiring board and the second semiconductor chip and between the wiring board and the first semiconductor chip so as to cover the first semiconductor chip; a base disposed on the wiring board to face a surface of the second semiconductor chip, wherein the insulating resin is provided between the base and the second semiconductor chip so as to cover the base.

Abstract: An organic light-emitting display apparatus capable of preventing permeation of external impurities such as oxygen or water vapor and enhancing impact resistance, and a method of manufacturing the organic light-emitting display apparatus. The organic light-emitting display apparatus includes a first substrate; a display unit disposed on the first substrate; a second substrate disposed over the display unit; and a sealing member by which the first substrate is combined with the second substrate. The sealant includes a first sealant which includes a filler and is spaced apart from the first substrate and the second substrate, and a second sealant which contacts the first substrate and the second substrate and covers at least a part of the first sealant.

Abstract: To provide a light emitting device that is compact and has high efficiency of extracting light comprising a support body that incorporates a light emitting element. The light emitting device has the protective element 106 mounted on the electrically conductive member 103a and the base 105 mounted on the electrically conductive member 103a, while at least part of the protective element 106 is covered with the base 105, and the light emitting element 104 is mounted on the top surface of the base 105.

Abstract: A system for displaying images and fabricating method thereof are provided. The system includes a thin film transistor substrate including a substrate having a display area and a pad area. The thin film transistor substrate further includes a conductive line disposed on the substrate in the display area. The conductive line includes a lower metal line, an upper metal line and a middle metal line therebetween. The width of the middle metal line is narrower than that of the upper metal line.

Abstract: In a semiconductor device including a semiconductor element and a wiring substrate on which the semiconductor element is mounted. The wiring substrate includes an insulating substrate and conductive wiring formed in the insulating substrate and electrically connected to the semiconductor element. The conductive wiring includes an underlying layer formed on the insulating substrate, a main conductive layer formed on the underlying layer, and an electrode layer covering side surfaces of the underlying layer and side surfaces and an upper surface of the main conductive layer. The underlying layer includes an adhesion layer being formed in contact with the insulating substrate and containing an alloy of Ti.

Abstract: An exemplary LED includes an electrode layer, an LED die, a transparent electrically conductive layer, and an electrically insulating layer. The electrode layer includes a first section and a second section electrically insulated from the first section. The LED die is arranged on and electrically connected to the second section of the electrode layer. The transparent electrically conductive layer is formed on the LED die and electrically connects the LED die to the first section of the electrode layer. The electrically insulating layer is located between the LED die and the transparent electrically conductive layer to insulate the transparent electrically conductive layer from the second section of the electrode layer.