Abstract: To reliably keep an LED board and a heat conductive member in close contact to improve the heat-dissipation efficiency and to reliably position an LED and an optical element, such as a lens part, arranged in a housing are a slim LED board, the housing that has an accommodating concave part to house the LED board, a heat conductive member that is arranged between the LED board and the accommodating concave part, a pressing member that has the lens part and that presses a long side edge part of the LED board against a bottom surface of the accommodating concave part of the housing, a securing mechanism for securing the LED board, the heat conductive member and the pressing member to the housing, and a positioning mechanism for positioning the lens part relative to the LED.

Abstract: A wiring board (10) of the present invention includes: a through hole (11b), provided in a semiconductor chip mounted region (15), penetrating the wiring board (10); and a groove pattern (13), provided on a solder resist (9) formed on the semiconductor chip mounted region (15), leading to the through hole (11b). The foregoing configuration makes it possible to guide, via the groove pattern (13) to the through hole (11b), moisture that collects in the semiconductor chip mounted region (15) and therefore to effectively discharge the moisture from the semiconductor chip mounted region (15). Thus, a semiconductor device (30) that employs the wiring board (10) does not suffer from vaporization and expansion, inside of it, due to heat that is applied at the time of manufacturing the semiconductor device (30) and at the time of mounting the semiconductor device (30) on a mount substrate. It is therefore possible to reduce expansion of the semiconductor device.

Abstract: An LED leadframe package with surface tension function to enable the production of LED package with convex lens shape by using dispensing method is disclosed. The LED leadframe package of the invention is a PPA supported package house for LED packaging with metal base, four identical metal electrodes, and PPA plastic to fix the metal electrodes and the heat dissipation base together, four ring-alike structures with a sharp edge and with a tilted inner surface, and three ring-alike grooves formed between sharp edge ring-alike structures.

Abstract: A rounded square lens is used instead of a hemispherical lens in an LED package to produce a substantially Lambertian light emission pattern. A cross-sectional view of the rounded square lens cut along its diagonal forms a semicircular surface so as to emulate a hemispherical lens in areas close to the diagonal. A cross-sectional view of the lens cut along its width bisecting the lens forms a bullet shaped surface narrower than the semicircular surface but having the same height as the semicircular surface. The four corners of the lens are rounded. The surface of the lens smoothly transitions between the two surface shapes. Since the rounded square lens has a diagonal dimension larger than a maximum allowable diameter of a hemispherical lens in the same package body, a larger LED die may be used with the rounded square lens to output more light without increasing the size of the package while maintaining a Lambertian emission.

Abstract: At a first location on a first portion of a mounting interface, a mounted first light source comprises a first light emitting diode and a mounting surface electrically coupled to an anode of the first light emitting diode; and at a second location on the first portion of the mounting interface, a mounted second light source comprises a second light emitting diode and a mounting surface electrically coupled to a cathode of the second light emitting diode. The mounting connections provide thermal conductivity between the first portion and the mounting surface of the first light source and between the first portion and the mounting surface of the second light source, and provide an electrical connection between the anode of the first light emitting diode and the cathode of the second light emitting diode.

Abstract: The present invention discloses an LED package structure which has a housing, an LED chip and a transparent encapsulant. The housing has a recess and a plurality of protrusions. The LED chip is mounted in the recess of the housing, and covered in the recess by the transparent encapsulant. The protrusions are formed in the recess or on the edge of the housing. The protrusions of the present invention can form the uneven shape of the surface of the transparent encapsulant, so as to increase the diffusion angle of the light and enhance the light extraction efficiency.

Abstract: A LED die and method for bonding, dicing, and forming the LED die are disclosed. In an example, the method includes forming a LED wafer, wherein the LED wafer includes a substrate and a plurality of epitaxial layers disposed over the substrate, wherein the plurality of epitaxial layers are configured to form a LED; bonding the LED wafer to a base-board to form a LED pair; and after bonding, dicing the LED pair, wherein the dicing includes simultaneously dicing the LED wafer and the base-board, thereby forming LED dies.

Abstract: A light emitting device includes a light emitting structure formed from an active layer located between two semiconductor layers. An insulator extends through the active layer and at least partially through the semiconductor layers, and the light emitting structure is located between a first electrode and a second electrode layer. The first electrode and insulator overlap one another and may have the same or different widths.

Abstract: A method of light-emitting diode (LED) packaging includes coupling a number of LED dies to corresponding bonding pads on a sub-mount. A mold apparatus having concave recesses housing LED dies is placed over the sub-mount. The sub-mount, the LED dies, and the mold apparatus are heated in a thermal reflow process to bond the LED dies to the bonding pads. Each recess substantially restricts shifting of the LED die with respect to the bonding pad during the heating.

Abstract: The present invention provides a manufacturing method of an LED chip. First, a device layer is formed on a growth substrate, wherein the device layer has a first surface connected to the growth substrate and a second surface. Next, a plurality of first trenches are formed on the second surface of the device layer. Then, a protection layer is formed on the side walls of the first trenches. After that, the second surface is bonded with a supporting substrate and the device layer is then separated from the growth substrate. Further, a plurality of second trenches corresponding to the first trenches are formed in the device layer to form a plurality of LEDs, wherein the second trenches extend from the first surface to the bottom portions of the first trenches. Furthermore, a plurality of electrodes are formed on the first surface of the device layer.

Abstract: The light emitting device has a substrate, metallization including silver established on the surface of the substrate, a light emitting element mounted on the substrate, conducting wire that electrically connects the metallization and the light emitting element, light reflective resin provided on the substrate to reflect light from the light emitting element, and insulating material that covers at least part of the metallization surfaces. The insulating material is established to come in contact with the side of the light emitting element. This arrangement can suppress the leakage of light emitting element light from the substrate, and can achieve a light emitting device with high light extraction efficiency.

Abstract: A light emitting diode for harsh environments includes a substantially transparent substrate, a semiconductor layer deposited on a bottom surface of the substrate, several bonding pads, coupled to the semiconductor layer, formed on the bottom surface of the substrate, and a micro post, formed on each bonding pad, for electrically connecting the light emitting diode to a printed circuit board. An underfill layer may be provided between the bottom surface of the substrate and the top surface of the printed circuit board, to reduce water infiltration under the light emitting diode substrate. Additionally, a diffuser may be mounted to a top surface of the light emitting diode substrate to diffuse the light emitted through the top surface.

Abstract: A light emitting diode (LED) package includes a substrate, a first LED chip and a second LED chip. The substrate includes first to fourth electrodes, and an interconnection electrode. A mounting area is defined at center of a top surface of the substrate. The first to fourth electrodes are respectively in four corners of the substrate out of the mounting area. The first interconnection electrode is embedded in the substrate to electrically connect the first and the third electrodes. The first LED chip and the second LED chip are arranged in the mounting area. Each LED chip includes an anode pad and a cathode pad. The first to fourth electrodes are respectively connected to the four pads of the first and the second LED chips via a plurality of metal wires, and no metal wire connection is formed between the first and the second LED chips.

Abstract: Provided are a light emitting device. The light emitting device comprises a package body, an insulating layer on a surface of the package body, first and second electrode layers on the insulating layer, a light emitting diode disposed on the package body and electrically connected to the first and second electrode layers, a resistor layer connected to the first electrode layer, a first element part in a first doping region within the package body, a second element part in a second doping region within the package body, and a third electrode layer connected to the first element part and the second element part.

Abstract: A light source that restricts the heat accumulation in the phosphor. The light source includes: a substrate 5; LED elements D21, D22, D23, D41, D42 that have been implemented on a main surface of the substrate 5; projections 11 that have been formed in areas of the main surface of the substrate 5 in which any of the LED elements D21, D22, D23, D41, D42 have not been implemented; and a translucent sealing member 7 that has been formed on the substrate in a state that the LED elements D21, D22, D23, D41, D42 and the projections 11 are covered and sealed with the sealing member 7. The sealing member 7 includes a phosphor 13 that converts light from the LED elements D21, D22, D23, D41, D42 into light of a predetermined color. The heat conductivity of the projections 11 is higher than the heat conductivity of the sealing member 7.

Abstract: A luminous means (1) including at least one optoelectronic semiconductor device (2) which emits electromagnetic radiation during operation at at least one first wavelength (L1) and at at least one second wavelength (L2), wherein the first wavelength (L1) and the second wavelength (L2) differ from one another and are below 500 nm, in particular between 200 nm and 500 nm. Furthermore, the luminous means (1) includes at least one conversion means (3) which converts the first wavelength (L1) at least partly into radiation having a different frequency. The radiation spectrum emitted by the luminous means (1) during operation is metameric with respect to a black body spectrum. Such a luminous means makes it possible to choose the first wavelength and the second wavelength in such a way that a high color rendering quality and a high efficiency of the luminous means can be realized simultaneously.

Abstract: A semiconductor package structure includes a package substrate, at least a chip, solder balls, a light emitting/receiving device, a optical intermediary device and an optical transmission device. The package substrate has a first surface, a second surface, a circuit and solder ball pads, wherein each solder ball pad is electrically connected to the circuit. The chip is disposed on the first surface and electrically connected to the circuit. The solder balls are respectively disposed on the solder ball pads. The light emitting/receiving device is disposed on the package substrate and electrically connected to the circuit. The optical intermediary device is disposed above the light emitting/receiving device. The optical transmission device is inserted in the optical intermediary device, wherein a light emitting by the light emitting/receiving device is emitted to the optical transmission device via the optical intermediary device so that an optical signal is transmitted through the optical transmission device.

Abstract: A multichip package structure includes a substrate unit, a light-emitting unit, a current-limiting unit, a frame unit and a package unit. The substrate unit includes a first chip-placing region and a second chip-placing region. The light-emitting unit includes a plurality of light-emitting chips electrically connected to the first chip-placing region. The current-limiting unit includes at least one current-limiting chip electrically connected to the second chip-placing region and the light-emitting unit. The frame unit includes a first annular colloid frame surrounding the light-emitting chips and a second annular colloid frame surrounding the current-limiting chip. The package unit includes a first package colloid body surrounded by the first annular colloid frame to cover the light-emitting chips and a second package colloid body surrounded by the second annular colloid frame to cover the current-limiting chip.

Abstract: A TFT array substrate including a substrate, a plurality of pixel structures and a plurality of cutting marks is provided. The substrate has a device region and a cutting mark region. The pixel structures are disposed in the device region and each pixel structure includes a TFT, a pixel electrode and a passivation layer covering the TFT. The cutting marks are within the cutting mark region, disposed at two sides of a predetermined cutting position, and are arranged as a row or column perpendicular to a predetermined cutting direction. In particular, the cutting marks are constituted of at least two colors, at least two shapes, at least one color and at least one shape, or a combination thereof.

Abstract: The present invention relates to a light-emitting diode die package having an LED die and an accommodating housing. The LED die has a first doped layer doped with a p- or n-type dopant and a second doped layer doped with a different dopant from that doped in the first doped layer. Each of the first and second doped layers has an electrode-forming surface formed with an electrode, on which an insulation layer is formed. The insulation layer is formed with exposure holes for exposing the electrodes corresponding thereto. Each of the exposure holes is formed inside with an electrically conductive linker. The accommodating housing has an open end through which an accommodating space is accessible. The LED die is positioned within the accommodating space in such a manner that the electrically conductive linker protrudes outwardly from the accommodating space.

Abstract: The present invention relates to a light-emitting diode die package having an LED die and an accommodating housing. The LED die has a first doped layer doped with a p- or n-type dopant and a second doped layer doped with a different dopant from that doped in the first doped layer. Each of the first and second doped layers has an electrode-forming surface formed with an electrode, on which an insulation layer is formed. The insulation layer is formed with exposure holes for exposing the electrodes corresponding thereto. Each of the exposure holes is formed inside with an electrically conductive linker. The accommodating housing has an open end through which an accommodating space is accessible. The LED die is positioned within the accommodating space in such a manner that the electrically conductive linker protrudes outwardly from the accommodating space.

Abstract: The disclosure provides methods and materials for efficiently encapsulating electronic devices such as organic electroluminescent devices. The disclosure also provides electronic devices prepared by such methods. In one embodiment, for example, there is provided a method for preparing an electroluminescent device comprising forming a groove in a substrate and/or forming a groove in an encapsulation layer, depositing a desiccant in the groove or grooves, and bonding the substrate to the encapsulation layer.

Abstract: A semiconductor light emitting device is mounted on a support substrate. The support substrate is disposed in an opening in a carrier. In some embodiments, the support substrate is a ceramic tile and the carrier is a low cost material with a lateral extent large enough to support a lens molded over or attached to the carrier.

Abstract: A package for a light source, a semiconductor device, and methods of manufacturing the same are disclosed. In particular, a Light Emitting Diode (LED) dice is attached to a bonding pad of the light source package by two discrete types of different adhesives. One of the adhesives may be curable under exposure to Ultraviolet (UV) light and the other adhesive may be cured under thermal radiation, but is stable when exposed to UV light.

Abstract: Embodiments provide a light emitting device comprising a support member, a light emitting structure disposed on the support member, the light emitting structure comprising a first semiconductor layer comprises a first and second regions, a second semiconductor layer disposed on the second region, and an active layer between the first and second semiconductor layers, a first electrode disposed on the first semiconductor layer and a second electrode disposed on the second semiconductor layer, wherein the support member includes metal ions to convert light of a first wavelength emitted from the active layer into light of a second wavelength different from the first wavelength.

Abstract: Disclosed are a light emitting device package and a lighting system in which the light emitting device package includes a first cavity in a first region of the body, a second cavity in a second region of the body, first and second lead frames spaced apart from each other in the first cavity, a third lead frame spaced apart from the second lead frame in the second cavity, a first light emitting device on the first and second lead frames in the first cavity, a second light emitting device on the second and third lead frames in the second cavity, and a molding member in the first and second cavities.

Abstract: A system and method for packaging light emitting semiconductors (LESs) is disclosed. An LES device is provided that includes a heatsink and an array of LES chips mounted on the heatsink and electrically connected thereto, with each LES chip comprising connection pads and a light emitting area configured to emit light therefrom responsive to a received electrical power. The LES device also includes a flexible interconnect structure positioned on and electrically connected to each LES chip to provide for controlLES operation of the array of LES chips, with the flexible interconnect structure further including a flexible dielectric film configured to conform to a shape of the heatsink and a metal interconnect structure formed on the flexible dielectric film and that extends through vias formed in the flexible dielectric film so as to be electrically connected to the connection pads of the LES chips.

Abstract: A package (1; 20) for protecting a device (2; 21) from ambient substances, the package comprising an enclosure surrounding the device (2; 21). The enclosure includes a multi-layer barrier (7; 24) and an internal substance binding member (14; 27) which is provided inside the enclosure to bind at least one of said ambient substances having penetrated the enclosure. The package (1; 20) further comprises an intermediate substance binding member (14; 29) which is provided between an inner (11a-b; 25) and an outer (16a-b; 28) barrier layer of the multi-layer barrier (7; 24) to bind a fraction of the substance having penetrated the outer barrier layer (16a-b; 28).

Abstract: A method to fabricate monolithically-integrated optoelectronic module apparatuses (100) comprising at least two series-interconnected optoelectronic components (104, 106, 108). The method includes deposition and scribing on an insulating substrate or superstate (110) of a 3-layer stack in order (a, b, c) or (c, b, a) comprising: (a) back-contact electrodes (122, 124, 126, 128), (b) semiconductive layer (130), and (c) front-contact components (152, 154, 156, 158). Via holes (153, 155, 157) are drilled so that heat of the drilling process causes a metallization at the surface of said via holes that renders conductive the semi-conductive layer's surface (132, 134, 136, 138) of said via holes, thereby establishing series-interconnecting electrical paths between optoelectronic components (104, 106, 108) by connecting first front-contact components (154, 156) to second back-contact electrodes (124, 126).

Abstract: A packaging device for matrix-arrayed semiconductor light-emitting elements of high power and high directivity comprises a metal base, an array chip and a plurality of metal wires. The metal base is of highly heat conductive copper or aluminum, and a first electrode area and at least one second electrode area which are electrically isolated are disposed on the metal base. The array chip is disposed on the first electrode area, on which multiple matrix-arranged semiconductor light-emitting elements and at least one wire bond pad adjacent to the light-emitting elements are disposed. The light-emitting element is a VCSEL element, an HCSEL element or an RCLED element. The metal wires are connected between the wire bond pad and the second electrode area to transmit power signals. Between the bottom surface and the first electrode area is disposed a conductive adhesive to bond and facilitate electrical connection between the two.

Abstract: A buffer layer of zinc telluride (ZnTe) or titanium dioxide (TiO2) is formed directly on a silicon substrate. Optionally, a layer of AlN is then formed as a second layer of the buffer layer. A template layer of GaN is then formed over the buffer layer. An epitaxial LED structure for a GaN-based blue LED is formed over the template layer, thereby forming a first multilayer structure. A conductive carrier is then bonded to the first multilayer structure. The silicon substrate and the buffer layer are then removed, thereby forming a second multilayer structure. Electrodes are formed on the second multilayer structure, and the structure is singulated to form blue LED devices.

Abstract: An optical device for a semiconductor based lamp includes a base and a semiconductor based light-emitting device mounted on the base. A transparent body encapsulates the semiconductor based light-emitting device. A reflective surface is in contact with the transparent body and covers a predetermined region on a top of the transparent body. The reflective surface has an opening. At least a portion of the transparent body protrudes through the opening in the reflective surface. Light emitted from the semiconductor based light-emitting device transmits upwardly through the opening in the reflective surface.

Abstract: A light emitting diode (LED) package includes: an array substrate; a plurality of LEDs mounted on the array substrate and arranged in rows and columns; a plurality of wavelength conversion units disposed in a light path of light emitted from each of the plurality of LEDs to convert the wavelength thereof; a plurality of first inspection terminals formed on the array substrate and electrically connected to LEDs in the same rows, among the plurality of LEDs; and a plurality of second inspection terminals formed on the array substrate and electrically connected to LEDs in the same columns, among the plurality of LEDs.

Abstract: An LED package device having a dam located on a substrate is provided, by which two regions are defined on the substrate. Two LED dies are respectively disposed on the two regions and separated by the dam; therefore, the LED package device has an enhanced intensity of the lateral-emitting light and a wide light emitting angle. The LED package devices can be used in backlight units to prevent mura and hot spot issues.

Abstract: Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.

Abstract: A light emitting device is disclosed. The light emitting device includes a light emitting structure including a first semiconductor layer doped with a first dopant while including a first region and a second region stepped relative to the first region, a second semiconductor layer doped with a second dopant different from the first dopant while disposed over the second region, and an active layer disposed between the first and second semiconductor layers, a first electrode disposed on the first region, and a functional member disposed between one side surface of the light emitting structure adjacent to the first electrode and the first electrode while being disposed at the first region, wherein the functional member has a thickness greater than a thickness of the first electrode and less than a thickness of the light emitting structure, with respect to a surface of the first region.

Abstract: Circuit structures and methods of fabrication are provided for facilitating implementing a complete electronic system in a compact package. The circuit structure includes, in one embodiment, a chips-first multichip base layer with conductive structures extending therethrough. An interconnect layer is disposed over the front surface of the multichip layer and includes interconnect metallization electrically connected to contact pads of the chips and to conductive structures extending through the structural material. A redistribution layer, disposed over the back surface of the multichip layer, includes a redistribution metallization also electrically connected to conductive structures extending through the structural material.

Abstract: A light emitting device 10 includes a light emitting element 11, a package 13 in which the light emitting element 11 is accommodated, and a sealing member 14 configured to seal the light emitting element 11. The package 13 includes a base 13B configured to hold the light emitting element 11 and a frame part 13A vertically standing on the base 13B so as to surround the light emitting element 11. The sealing member 14 is embedded in a region surrounded by the frame part 13A. The frame part 13A includes a protruding wall 15 upwardly protruding from an upper end surface 132a of the frame part 13A and provided so as to surround the light emitting element 11.

Abstract: A lighting system and protection means are disclosed. In particular, a Zener diode with pre-selected characteristics is used in parallel with an LED such that current will continue to flow through the circuit in case of LED failure. This adaptation in turn may be used in a series string combination.

Abstract: A method for manufacturing an optical-semiconductor device, including forming a plurality of first and second electrically conductive members that are disposed separately from each other on a support substrate; providing a base member formed from a light blocking resin between the first and second electrically conductive members; mounting an optical-semiconductor element on the first and/or second electrically conductive member; covering the optical-semiconductor element by a sealing member formed from a translucent resin; and obtaining individual optical-semiconductor devices after removing the support substrate.

Abstract: A light emitting diode (LED) package including a carrier, at least one LED chip, and a light guide element is provided. The LED chip is disposed on the carrier. The light guide element including a light transmissive body, a light integration part, a reflective film, and a support part is disposed on the carrier and above the LED chip. The light integration part connected to the light transmissive body and disposed between the light transmissive body and the LED chip has a light incident surface facing the LED chip and at least one side. The side connects the light transmissive body and the light incident surface. The reflective film is disposed on the side. The support part leaning on the carrier is connected to the light transmissive body and surrounds the light integration part. The light transmissive body, the light integration part, and the support part are integrally formed.

Abstract: Multi-chip light emitting diodes and method for fabricating the same are provided. The multi-chip light emitting diode includes a lead frame including a carrier part. A plurality of chips is disposed on the carrier part, wherein the plurality of chips includes a first chip and a second chip. A first scattering layer is conformally covering the first chip to expose electrodes thereof, wherein the first scattering layer consists of a first scattering material. A second scattering layer is conformally covering the second chip to expose electrodes thereof, wherein the second scattering layer consists of a second scattering material.

Abstract: A display device and a method for manufacturing the same which can improve the reliability of TFTs and provide good contrast characteristics are provided. A display device according to the present invention includes a light-transmissive substrate; an impurity-doped layer provided in a part of the light-transmissive substrate; an insulating film provided on the impurity-doped layer and the light-transmissive substrate; a TFT circuit formed on the insulating film and including a plurality of TFTs; and a shutter array including a plurality of shutters drivable by the TFT circuit.

Abstract: A light emitting diode package includes a heat-dissipating substrate including a reflective groove having a lower bottom surface, an upper opening having a width greater than the lower bottom surface, and an inclined surface formed between the upper opening and the lower bottom surface and mounting grooves, each formed in the reflective groove and having a lower bottom surface, an upper opening having a width greater than the lower bottom surface, and an inclined surface formed between the upper opening and the lower bottom surface; an insulating layer selectively formed on the heat-dissipating substrate; wiring pattern layers formed on the insulating layer and extending to bottom surfaces of the mounting grooves to be selectively formed thereon; a light emitting diode chip mounted in each of the mounting grooves; and a molding layer formed around the light emitting diode chip.

Abstract: The present invention relates to an optical device and a method for manufacturing the same. The technical object of the invention is to realize a surface emitting body which allows heat generated from a light-emitting chip to be easily dissipated, eliminates the need for an additional wiring layer, and allows a singular light emitting chips or a plurality of light emitting chips to be arranged in series, in parallel, or in series-parallel. The present invention discloses an optical device comprising: a substrate; a plurality of light emitting chips disposed on the substrate; a plurality of conductive wires which electrically connect the substrate with the light emitting chips such that the plurality of light emitting chips are connected to each other in series, in parallel or in series-parallel; and a protective layer which covers the plurality of light emitting chips and the plurality of conductive wires on the substrate.

Abstract: A support module (1), comprising a conducting layer (2) having a trough hole (5) and a receiving surface adapted to receive a solid state light source (3) with the electrical contact pad (4) being aligned with the through hole (5). The support module (1) further comprises an electrical insulation element (8) and at least one contact pin (9), extending through the electrical insulation element (8), and protruding through the through hole (5). Furthermore, the electrical insulation element (8) comprises a channel (10) allowing access to the end of the contact pin (9) and the electrical contact pad (4) of the solid state light source (3) received by the surface of the conducting layer (2). Such a channel makes it possible to reach the end of the contact pin and the contact pad through the insulation element with a soldering tool. Thus, it is possible to attach the solid state light source on a metal surface by soldering the contact pin to the contact pad.

Abstract: A light emitting diode package for one or more light emitting diodes mounted on a substrate. A frame is disposed on at least a portion of the substrate and substantially surrounds, but does not contact, the light emitting diode. The frame is substantially transparent to light emitted from the light emitting diode and includes one or more first wavelength converting materials. The wavelength converting materials, which may be one or more phosphors, convert at least a portion of light emitted at the emission wavelength to different wavelength. A cover covers the light emitting diode within the frame. The cover layer includes one or more second wavelength converting materials differing from the first one or more wavelength converting materials in wavelength converting material concentration or in converted light wavelength or in combinations of wavelength converting materials.

Abstract: A sensor device and method. One embodiment provides a first semiconductor chip having a sensing region. A porous structure element is attached to the first semiconductor chip. A first region of the porous structure element faces the sensing region of the first semiconductor chip. An encapsulation material partially encapsulates the first semiconductor chip and the porous structure element.

Abstract: A side view light emitting diode (LED) package structure includes a package housing, a side view LED chip and a thermal conductive member. The side view LED chip is enclosed by the package housing and an emitting direction of the side view LED chip is perpendicular to a thickness direction of a substrate. The thermal conductive member connected with the side view LED chip is disposed inside the package housing and a portion of which extends out of a dissipation opening of the package housing to be exposed so that heat of the side view LED chip is dissipated.

Abstract: A semiconductor light emitting device having a semiconductor stacking structure bonded onto the support member and having excellent characteristics is provided by a preferable electrode structure. The semiconductor light emitting device comprising; a semiconductor stacking structure having a first semiconductor layer and a second semiconductor layer of conductivity types different from each other, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer, wherein one principal surface of the first electrode has a portion that makes contact with the first semiconductor layer so as to establish electrical continuity and an external connection section.