Scattering Means (e.g., Surface Roughening) (epo) Patents (Class 257/E33.074)
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Patent number: 7800122Abstract: A light emitting diode device includes a multi-layer stack of materials including a p-layer, a n-layer, and a light generating region for emission of light in a primary emission direction towards one of the p- and n-layers; a substantially transparent layer located at or adjacent said one of the p- and n-layers, having a first surface facing said one of the p- and n-layers and an opposed second surface; and a reflective surface formed at or adjacent the second surface of the transparent layer for directing at least a portion of the emitted light in a direction away from the primary emission direction so as to enhance light emission from a side of the light emitting diode device.Type: GrantFiled: September 7, 2006Date of Patent: September 21, 2010Assignee: Hong Kong Applied Science and Technology Research Institute Co., ltd.Inventors: Kuo An Chiu, Jian Feng, Huaijun Peng, Hung Shen Chu, Shengmei Zheng
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Publication number: 20100230667Abstract: The present invention is intended to provide an organic LED element in which the extraction efficiency is improved up to 80% of emitted light, and provides a translucent substrate comprising a translucent glass substrate; a scattering layer formed on the glass substrate and comprising a glass which contains a base material having a first refractive index for at least one wavelength of light to be transmitted and a plurality of scattering materials dispersed in the base material and having a second refractive index different from that of the base material; and a translucent electrode formed on the scattering layer and having a third refractive index higher than the first refractive index, wherein distribution of the scattering materials in the scattering layer decreases toward the translucent electrode.Type: ApplicationFiled: May 7, 2010Publication date: September 16, 2010Inventors: Nobuhiro Nakamura, Motoshi Ono, Kenji Imakita, Hidefumi Odaka, Nao Ishibashi, Kazutaka Hayashi
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Publication number: 20100224894Abstract: The present disclosure relates to a III-nitride semiconductor light emitting device, including: a substrate; a plurality of III-nitride semiconductor layers grown over the substrate and including an active layer generating light by recombination of electrons and holes; a scattering surface provided on the substrate to scatter the light generated in the active layer; and a sub-scattering portion ruggedly formed on the scattering surface.Type: ApplicationFiled: December 30, 2009Publication date: September 9, 2010Applicant: WOOREE LST CO., LTDInventors: Keuk KIM, Yu-hang CHOI, Chae-seok LIM, Chi-kwon PARK
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Patent number: 7791094Abstract: Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate, in which concave-convex patterns are in at least a portion of a backside of the substrate, and a light emitting structure on the substrate and comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer.Type: GrantFiled: April 15, 2008Date of Patent: September 7, 2010Assignee: LG Innotek Co., Ltd.Inventor: Ho Sang Yoon
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Publication number: 20100213469Abstract: An illumination device having a plurality of light emitting diodes is provided. The light emitting diode may include a plurality of semiconductor layers at least one of which has a light emitting surface which may include a rough surface pattern having a pre-determined pattern. The pre-determined pattern may include one or more impurity regions with each region having a recess for guiding current across the light emitting surface and maximizing the emission of light (i.e. light intensity) of the illumination device. Each recess may include a lower internal portion having a bottom contact point located on a bottom surface and an upper internal portion integrally connected to the lower internal portion by a plurality of center contact points. The gaps created between the center and bottom contact points in adjacent recesses may act as spark gaps allowing for the current to flow through the entire light emitting surface.Type: ApplicationFiled: December 23, 2009Publication date: August 26, 2010Inventor: Andrew Locke
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Publication number: 20100213488Abstract: Provided are a light emitting device, a light emitting device package and a lighting system comprising the same. The light emitting device comprises a light emitting structure comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and an anti-reflection region on a lateral surface of the light emitting structure.Type: ApplicationFiled: February 19, 2010Publication date: August 26, 2010Inventors: Jeong Hyeon CHOI, Jae Wook Kim, Jeung Mo Kang, Du Hyun Kim
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Publication number: 20100213490Abstract: According to an aspect of the present invention, there is provided a sealing composition for a light emitting device, the sealing composition including: a silicone/epoxy compound resin including a silicone resin having at least one silicon atom-bonded hydroxyl group and an epoxy resin having at least one oxirane group while the hydroxyl group of the silicone resin and the oxirane group of the epoxy resin are chemically bound to each other.Type: ApplicationFiled: February 24, 2010Publication date: August 26, 2010Inventors: Il Woo PARK, Yong Chun Kim, Na Na Park, Bang Won Oh
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Publication number: 20100213869Abstract: An illumination device having one or more light emitting diodes is provided. The illumination device may include an alternate current to direct current converter, a current regulator for receiving an output of the alternate current to direct current converter and a light source, containing the one or more of light emitting diodes, for receiving the regulated current from the current regulator. The regulated current may be applied to the one or more light emitting diodes causing the light emitting diodes to illuminate. The one or more light emitting diodes may be connected in series and each light emitting diode may include a light emitting surface having rough surface pattern for maximizing the light intensity of the light emitting diodes while minimizing the heat dissipating from the light emitting diodes.Type: ApplicationFiled: December 23, 2009Publication date: August 26, 2010Inventor: Andrew Locke
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Publication number: 20100213481Abstract: A light emitting device including a light emitting structure having a first conductive semiconductor layer, an active layer disposed under the active layer and a second conductive semiconductor layer disposed under the active layer; a trench formed in a portion of the light emitting structure; a current barrier layer in the trench and configured to hinder current supply to the active layer at a portion where the trench is located and to block the active layer over the trench from emitting light; and a first electrode on the first conductive semiconductor layer above the portion where the trench is located.Type: ApplicationFiled: December 9, 2009Publication date: August 26, 2010Inventor: Sung Min Hwang
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Patent number: 7781789Abstract: An (Al, Ga, In)N light emitting diode (LED) in which multi-directional light can be extracted from one or more surfaces of the LED before entering a shaped optical element and subsequently being extracted to air. In particular, the (Al, Ga, In)N and transparent contact layers (such as ITO or ZnO) are embedded in or combined with a shaped optical element, which may be an epoxy, glass, silicon or other material molded into a sphere or inverted cone shape, wherein most of the light entering the inverted cone shape lies within a critical angle and is extracted. The present invention also minimizes internal reflections within the LED by eliminating mirrors and/or mirrored surfaces, in order to minimize re-absorption of the LED's light by the emitting layer (or the active layer) of the LED. To assist in minimizing internal reflections, transparent electrodes, such as ITO or ZnO, may be used. Surface roughening by patterning or anisotropically etching (i.e.Type: GrantFiled: November 15, 2007Date of Patent: August 24, 2010Assignee: The Regents of the University of CaliforniaInventors: Steven P. DenBaars, Shuji Nakamura, James S. Speck
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Patent number: 7781783Abstract: Light-emitting diode (LED) devices which can produce a uniform white light with a broad emission spectrum and a high color rendering index (CRI) are provided. For example, the emission spectrum of LED devices as described herein may provide more red light and yield a higher CRI light when compared to conventional white LEDs. For some embodiments, the various lights emitted from different layers of the LED device may mix at a light-scattering encapsulation layer and become a uniform white light.Type: GrantFiled: February 4, 2008Date of Patent: August 24, 2010Assignee: SemiLEDs Optoelectronics Co., Ltd.Inventors: Jui-Kang Yen, Yung-Wei Chen
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Patent number: 7781780Abstract: A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed.Type: GrantFiled: May 13, 2008Date of Patent: August 24, 2010Assignee: Bridgelux, Inc.Inventors: Chao-Kun Lin, Heng Liu
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Publication number: 20100207151Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer below the first conductive semiconductor layer, and a second conductive semiconductor layer below the active layer; a channel layer below the light emitting structure, in which an inner portion of the channel layer is disposed along an outer peripheral portion of the light emitting structure and an outer portion of the channel layer extends out of the light emitting structure; and a second electrode layer below the light emitting structure.Type: ApplicationFiled: February 12, 2010Publication date: August 19, 2010Inventor: Hwan Hee JEONG
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Publication number: 20100207147Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer, in which a patterned roughness is formed on a top surface of the second conductive semiconductor layer.Type: ApplicationFiled: February 16, 2010Publication date: August 19, 2010Inventor: Sung Kyoon Kim
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Publication number: 20100203661Abstract: The present invention provides a method for producing a light-emitting diode, the method comprising a lamination step of forming a laminated semiconductor layer by sequentially laminating an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer onto a substrate, as well as forming a plurality of reflective p-type electrodes on top of the p-type semiconductor layer, a plating step of forming a seed layer that covers the reflective p-type electrodes and the p-type semiconductor layer, and fowling a plating layer on top of the seed layer, a removal step of removing the substrate from the n-type semiconductor layer, thereby exposing a light extraction surface of the n-type semiconductor layer, and an electrode formation step of performing dry etching of the light extraction surface of the n-type semiconductor layer using an etching gas containing the same element as a dopant element within the n-type semiconductor layer, and subsequently forming an n-type electrode on the light extraType: ApplicationFiled: June 26, 2008Publication date: August 12, 2010Applicant: SHOWA DENKO K.K.Inventor: Takashi Hodota
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Patent number: 7772595Abstract: There is provided a method of forming a nitride semiconductor layer, including the steps of firstly providing a substrate on which a patterned epitaxy layer with a pier structure is formed. A protective layer is then formed on the patterned epitaxy layer, exposing a top surface of the pier structure. Next, a nitride semiconductor layer is formed over the patterned epitaxy layer connected to the nitride semiconductor layer through the pier structure, wherein the nitride semiconductor layer, the pier structure, and the patterned epitaxy layer together form a space exposing a bottom surface of the nitride semiconductor layer. Thereafter, a weakening process is performed to remove a portion of the bottom surface of the nitride semiconductor layer and to weaken a connection point between the top surface of the pier structure and the nitride semiconductor layer. Finally, the substrate is separated from the nitride semiconductor layer through the connection point.Type: GrantFiled: October 31, 2006Date of Patent: August 10, 2010Assignee: Industrial Technology Research InstituteInventors: Yih-Der Guo, Chih-Ming Lai, Jenq-Dar Tsay, Po-Chun Liu
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Publication number: 20100197055Abstract: A substrate has at least one recess and/or protrusion formed in and/or on a surface thereof so as to scatter or diffract light generated in an active layer. The recess and/or protrusion is formed in such a shape that can reduce crystalline defects in semiconductor layers.Type: ApplicationFiled: March 3, 2010Publication date: August 5, 2010Inventors: Hisanori TANAKA, Yasunobu Hosokawa, Yuuki Shibutani
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Publication number: 20100193806Abstract: Disclosed are a light emitting diode unit, a display apparatus having the same, and a method of manufacturing the same. The light emitting diode unit includes at least one light emitting diode, a quantum dot layer, and a buffer layer. The light emitting diode emits first light. The quantum dot layer is provided on the light emitting diode and includes a plurality of quantum dots that absorb the first light to emit second light having a wavelength different from a wavelength of the first light. The buffer layer is interposed between the light emitting diode and the quantum dot layer and separates the light emitting diode from the quantum dot layer. The buffer layer includes a scattering agent which is dispersed in resin to diffuse the light emitted from the light emitting diode.Type: ApplicationFiled: July 9, 2009Publication date: August 5, 2010Inventor: Jinseob Byun
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Publication number: 20100193823Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.Type: ApplicationFiled: April 8, 2010Publication date: August 5, 2010Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Tae Jun KIM, Su Yeol Lee, Dong Woo Kim, Hyun Ju Park, Hyoun Soo Shin, In Joon Pyeon
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Publication number: 20100193826Abstract: Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer, and an electrode layer comprising a conductive polymer on the second conductive semiconductor layer.Type: ApplicationFiled: December 12, 2008Publication date: August 5, 2010Applicant: LG INNOTEK LTD.Inventor: Sung Kyoon Kim
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Patent number: 7763907Abstract: A semiconductor light emitting element includes: an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0° to 45° in inclination angle into a <1-100> direction, and which is in a range of 0° to 10° in inclination angle into a <11-20> direction; an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and an concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer.Type: GrantFiled: September 5, 2007Date of Patent: July 27, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Koichi Tachibana, Hajime Nago, Shinji Saito, Shinya Nunoue, Genichi Hatakoshi
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Publication number: 20100183042Abstract: An optical diode structure includes a semiconductor substrate, a luminous layer, a first type semiconductor layer and a second type semiconductor. The luminous layer is disposed over the semiconductor substrate for emitting light. The first type semiconductor layer is formed between the semiconductor substrate and the luminous layer. The second type semiconductor layer has a first surface and a second surface. The first surface is in contact with the luminous layer. A rough-surfaced grating structure is formed in the second surface for modulating the light emitted by the luminous layer, thereby increasing light extraction efficiency of the luminance layer.Type: ApplicationFiled: January 19, 2010Publication date: July 22, 2010Applicant: NATIONAL CENTRAL UNIVERSITYInventors: Mount-Learn Wu, Jenq-Yang Chang, Yun-Chih Lee, Shih-Pu Yang
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Publication number: 20100176415Abstract: A light emitting device having a high degree of light extraction efficiency includes a substrate, and a light emitting structure disposed on one surface of the substrate, the substrate having an internal reformed region where the index of refraction differs from the remainder the substrate. The ratio of the depth of the reformed region (distance between the other surface of the substrate and the reformed region) to the thickness of the substrate is in a range of between 1/8 and 9/11.Type: ApplicationFiled: January 13, 2010Publication date: July 15, 2010Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seung-Jae Lee, Seong-Deok Hwang, Yu-Sik Kim, Sun-Pil Youn
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Publication number: 20100176416Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.Type: ApplicationFiled: March 24, 2010Publication date: July 15, 2010Inventors: Jong Wook KIM, Hyun Kyong Cho, Gyu Chul Yi, Sung Jin An, Jin Kyoung Yoo, Young Joon Hong
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Patent number: 7755097Abstract: A light emitting device having a light extraction structure, which is capable of achieving an enhancement in light extraction efficiency and reliability, and a method for manufacturing the same. The light emitting device includes a semiconductor layer having a multi-layered structure including a light emission layer; and a light extraction structure formed on the semiconductor layer in a pattern having unit structures. Further, the wall of each of the unit structures is sloped at an angle of ?45° to +45° from a virtual vertical line being parallel to a main light emitting direction of the light emitting device.Type: GrantFiled: November 30, 2007Date of Patent: July 13, 2010Assignees: LG Electronics Inc., LG Innotek Co., Ltd.Inventor: Sun Kyung Kim
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Publication number: 20100171136Abstract: The present invention provides a method of fabricating a light emitting diode, which comprises the steps of forming a compound semiconductor layer on a substrate, the compound semiconductor layer including a lower semiconductor layer, an active layer and an upper semiconductor layer; and scratching a surface of the substrate by rubbing the substrate with an abrasive. According to the present invention, the abrasive is used to rub and scratch the surface of the light emitting diode, thereby making it possible to cause the light emitted from the active layer to effectively exit to the outside. Therefore, the light extraction efficiency of the light emitting diode can be improved.Type: ApplicationFiled: May 16, 2008Publication date: July 8, 2010Inventors: Shiro Sakai, Yoshiki Naoi
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Patent number: 7749870Abstract: Provided is a method for producing an SOI substrate comprising a transparent insulating substrate and a silicon film formed on a first major surface of the insulating substrate wherein a second major surface of the insulating substrate which is opposite to the major surface is roughened, the method suppressing the generation of metal impurities and particles in a simple and easy way.Type: GrantFiled: March 27, 2009Date of Patent: July 6, 2010Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Makoto Kawai, Yoshihiro Kubota, Atsuo Ito, Kouichi Tanaka, Yuji Tobisaka, Shoji Akiyama, Hiroshi Tamura
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Publication number: 20100163903Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, and a layer of the plurality of compound semiconductor layers comprising a roughness comprising a sapphire material.Type: ApplicationFiled: December 24, 2009Publication date: July 1, 2010Inventor: Sang Kyun SHIM
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Publication number: 20100163887Abstract: The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.Type: ApplicationFiled: November 23, 2009Publication date: July 1, 2010Applicant: Seoul OPTO device Co., Ltd.Inventors: Kwang Choong KIM, Won Cheol Seo, Dae Won Kim, Dae Sung Kal, Kyung Hee Ye
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Publication number: 20100163902Abstract: Disclosed is a light emitting device. The light emitting device includes a light emitting structure comprising an active layer to generate first light, a first conductive semiconductor layer on the active layer, and a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers, wherein a portion of the light emitting structure is implanted with at least one element which generates second light from the first light.Type: ApplicationFiled: December 18, 2009Publication date: July 1, 2010Inventor: Yong Tae MOON
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Patent number: 7745240Abstract: A manufacturing method of a light-emitting element includes emitting a laser light to a division region for separating a light-emitting element formed on a substrate, physically dividing the substrate along the division region, and removing a surface layer on at least one of the side faces of the substrate that is exposed by the dividing of the substrate.Type: GrantFiled: July 12, 2007Date of Patent: June 29, 2010Assignee: Eudyna Devices Inc.Inventor: Akira Furuya
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Patent number: 7745843Abstract: A light emitting device with an increased light extraction efficiency includes a two-dimensional periodic structure in a surface thereof and has two layers that together form an asymmetric refractive index distribution with respect to the active layer, which is in between the two layers. The light emitting device includes a substrate layer, a first layer, an active layer and a second layer that are stacked sequentially. The first layer includes at least one layer, including a semiconductor cladding layer of a first conductivity type. At least one layer of the first layer has a refractive index that is lower than a refractive index of the active layer and lower than a refractive index of a layer of the second layer that is adjacent to the active layer. Each constituent layer of the second layer has a refractive index that is lower than the refractive index of the active layer.Type: GrantFiled: September 26, 2007Date of Patent: June 29, 2010Assignee: Stanley Electric Co., Ltd.Inventors: Toshihiko Baba, Takuya Kazama, Junichi Sonoda
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Patent number: 7745345Abstract: A manufacture method for a ZnO based semiconductor device includes the steps of: (a) preparing a ZnO based semiconductor wafer including a ZnO based semiconductor substrate having a wurzeit structure with a +C plane on one surface and a ?C plane on an opposite surface, a first ZnO based semiconductor layer having a first conductivity type epitaxially grown above the +C plane of the ZnO based semiconductor substrate, and a second ZnO based semiconductor layer having a second conductivity type opposite to the first conductivity type epitaxially grown above the first semiconductor layer; and (b) wet-etching the ZnO based semiconductor wafer with acid etching liquid to etch the ?C plane of the ZnO based semiconductor substrateType: GrantFiled: November 5, 2008Date of Patent: June 29, 2010Assignee: Stanley Electric Co., Ltd.Inventors: Naochika Horio, Kazufumi Tanaka
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Patent number: 7741134Abstract: A light source and method for fabricating the same are disclosed. The light source includes a substrate and a light emitting structure. The substrate has a first surface and a second surface, the second surface including a curved, convex surface with respect to the first surface of the substrate. The light emitting structure includes a first layer of a material of a first conductivity type overlying the first surface, an active layer overlying the first layer, the active layer generating light when holes and electrons recombine therein, and a second layer includes a material of a second conductivity type overlying the active layer and a second surface opposite to the first surface. A mirror layer overlies the light emitting structure.Type: GrantFiled: September 15, 2008Date of Patent: June 22, 2010Assignee: Bridgelux, Inc.Inventor: Ghulam Hasnain
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Publication number: 20100148197Abstract: A method of texturing a surface within or immediately adjacent to a template layer of a LED is described. The method uses a texturing laser directed through a substrate to decompose and pit a semiconductor material at the surface to be textured. By texturing the surface, light trapping within the template layer is reduced. Furthermore, by patterning the arrangement of pits, metal coating each pit can be arranged to spread current through the template layer and thus through the n-doped region of a LED.Type: ApplicationFiled: December 17, 2008Publication date: June 17, 2010Applicant: Palo Alto Research Center IncorporatedInventors: David P. Bour, Clifford F. Knollenberg, Christopher L. Chua
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Publication number: 20100151608Abstract: Disclosed is a method of manufacturing a substrate for an organic EL device, the method comprising the step of: filling grooves of the optical element with sol-gel coating solution or organic metal cracking solution when a diffraction grating 12 is formed on the glass substrate 11, wherein an encapsulation member 5 is mounted to the glass substrate 11 in order to fill the groove 12a with the coating solution, and the coating solution is injected into a gap between the encapsulation member 5 and the diffraction grating 12, so that the organic EL device can be stably manufactured with low variation between optical properties according to positions of the substrate and with improved luminous efficiency.Type: ApplicationFiled: February 25, 2010Publication date: June 17, 2010Applicant: Samsung Mobile Display Co., Ltd.Inventors: Yasuharu ONISHI, Satoru Toguchi, Junichi Yamanari, Hitoshi Ishikawa, Tomohisa Gotoh, Atsushi Kamijo
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Publication number: 20100140647Abstract: A semiconductor LED and a method manufacturing the semiconductor LED are disclosed. The method can include: forming a light emitting structure, which includes an N-type semiconductor layer, an active layer, and a P-type semiconductor layer stacked together, on a substrate; processing a division groove in the shape of a dotted line from the direction of the substrate or from the direction of the light emitting structure; and dividing the substrate and the light emitting structure along the division groove by applying pressure to at least one of the substrate and the light emitting structure. Embodiments of the invention can prevent total reflection for light emitted through the sides, and as a result, the light emitting efficiency can be improved.Type: ApplicationFiled: December 9, 2009Publication date: June 10, 2010Inventor: Il-Kweon JOUNG
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Publication number: 20100139759Abstract: The present invention relates to an optical device and to a method of fabricating the same. In embodiments, the invention relates to a photovoltaic device or solar cell. The optical device comprises a first electrode and a second electrode and an active element disposed between the first and second electrodes. The active element comprising a plurality of semiconducting structures extending in a lengthwise direction from the first electrode and being in contact with the first and second electrodes; the active element comprises an np-junction. For the semiconducting structures, at least a part of the structures is of a general plate or flake shape. In embodiments, the semiconducting structures have at least one characteristic dimension in the nanometer range.Type: ApplicationFiled: November 23, 2007Publication date: June 10, 2010Applicant: KOBENHAVNS UNIVERSITETInventor: Martin Aagesen
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Publication number: 20100133567Abstract: A semiconductor light emitting device and a method of manufacturing the same are provided. The semiconductor light emitting device comprises a first conductive semiconductor layer comprising a concave portion, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.Type: ApplicationFiled: May 21, 2008Publication date: June 3, 2010Applicant: LG INNOTEK CO., LTDInventor: Hyo Kun Son
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Publication number: 20100133562Abstract: A light emitting device and method for making the same are disclosed. The device includes an active layer disposed between first and second layers. The first layer has top and bottom surfaces. The top surface includes a first material of a first conductivity type, including a plurality of pits in the substantially planar surface. The active layer overlies the top surface of the first layer and conforms to the top surface, the active layer generating light characterized by a wavelength when holes and electrons recombine therein. The second layer includes a second material of a second conductivity type, the second layer overlying the active layer and conforming to the active layer. The device can be constructed on a substrate having a lattice constant sufficiently different from that of the first material to give rise to dislocations in the first layer that are used to form the pits.Type: ApplicationFiled: August 21, 2009Publication date: June 3, 2010Inventors: Ling Zhang, Steven D. Lester, Jeffrey C. Ramer
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Publication number: 20100127276Abstract: A light-emitting device and the method for making the same are disclosed. The device includes a substrate, a light-emitting structure and a light scattering layer. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the active layer emitting light of a predetermined wavelength when electrons and holes from the n-type GaN layer and the p-type GaN layer, respectively, combine therein. The light scattering layer includes a GaN crystalline layer characterized by an N-face surface. The N-face surface includes features that scatter light of the predetermined wavelength. The light-emitting structure is between the N-face surface and the substrate.Type: ApplicationFiled: January 18, 2010Publication date: May 27, 2010Inventor: Steven D. Lester
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Patent number: 7723732Abstract: A semiconductor light-emitting device includes a substrate having two main surfaces; and an active layer forming part, which is made of a compound semiconductor material, formed on one of the main surfaces, and includes an active layer. A plurality of holes, which pass through the active layer, are formed from the upper surface of the active layer forming part; a plurality of hollow parts, each of which corresponds to each hole, are provided between the active layer and the substrate; and the area of each hollow part is larger than that of the corresponding hole in plan view, and spreads on the lower surface of the active layer forming part, so as to expose a part of the lower surface of the active layer forming part, which overlaps the hollow part in plan view.Type: GrantFiled: November 7, 2007Date of Patent: May 25, 2010Assignee: Sanken Electric Co., Ltd.Inventors: Mikio Tazima, Yoshiki Tada
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Publication number: 20100117108Abstract: The invention relates to processes for the production and elements (components) with a nanostructure (2; 4, 4a) for improving the optical behavior of components and devices and/or for improving the behavior of sensors by enlarging the active surface area. The nanostructure (2) is produced in a self-masking fashion by means of RIE etching and its material composition can be modified and it can be provided with suitable cover layers.Type: ApplicationFiled: April 10, 2007Publication date: May 13, 2010Applicant: X-FAB SEMICONDUCTOR FOUNDRIES AGInventors: Daniel Gaebler, Konrad Bach
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Patent number: 7713769Abstract: The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer on carved regions; the carved region is selectively etched to form a plurality of concave zones and form a plurality of convex zones; a semiconductor layer structure is epitaxially grown on the element regions and carved regions of the substrate; the semiconductor layer structure on the element regions is fabricated into a LED element with a photolithographic process.Type: GrantFiled: December 21, 2007Date of Patent: May 11, 2010Assignee: Tekcore Co., Ltd.Inventors: Hung-Cheng Lin, Chia-Ming Lee, Jen-Inn Chyi
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Publication number: 20100109034Abstract: A double-molded lens for an LED includes an outer lens molded around the periphery of an LED die and a collimating inner lens molded over the top surface of the LED die and partially defined by a central opening in the outer lens. The outer lens is formed using silicone having a relatively low index of refraction such as n=1.33-1.47, and the inner lens is formed of a higher index silicone, such as n=1.54-1.76, to cause TIR within the inner lens. Light not internally reflected by the inner lens is transmitted into the outer lens. The shape of the outer lens determines the side emission pattern of the light. The front and side emission patterns separately created by the two lenses may be tailored for a particular backlight or automotive application.Type: ApplicationFiled: November 5, 2008Publication date: May 6, 2010Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V., PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Serge Bierhuizen, Mark Butterworth
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Publication number: 20100102352Abstract: The present disclosure relates to a III-nitride semiconductor light-emitting device including a substrate with a scattering zone formed therein, and a plurality of III-nitride semiconductor layers including a first III-nitride semiconductor layer formed over the substrate and having a first conductivity type, a second III-nitride semiconductor layer formed over the first III-nitride semiconductor layer and having a second conductivity type different from the first conductivity type, and an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes.Type: ApplicationFiled: December 28, 2009Publication date: April 29, 2010Applicant: EPIVALLEY CO., LTD.Inventors: Chang Tae Kim, Min Gyu Na
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Publication number: 20100102341Abstract: A semiconductor light emitting device includes: a transparent substrate including a first principal surface and a second principal surface opposite with the first principal surface, in which side surfaces between the first principal surface and the second principal surface are rough surfaces; and a semiconductor light emitting element that is arranged on the first principal surface of the transparent substrate and is composed by stacking nitride semiconductors on each other.Type: ApplicationFiled: June 3, 2008Publication date: April 29, 2010Applicant: ROHM CO., LTD.Inventors: Kazuaki Tsutsumi, Yohei Ito, Yasuo Nakanishi, Shunji Nakata
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Publication number: 20100102338Abstract: The present disclosure relates to a III-nitride semiconductor light-emitting device including a substrate, a plurality of III-nitride semiconductor layers including a first nitride semiconductor layer formed over the substrate and having a first conductivity type, a second nitride semiconductor layer formed over the first nitride semiconductor layer and having a second conductivity type different from the first conductivity type, and an active layer disposed between the first nitride semiconductor layer and the second nitride semiconductor layer and generating light by recombination of electrons and holes, and an opening formed along the plurality of III-nitride semiconductor layers from the substrate, and including a first scattering surface scattering the light generated in the active layer and a second scattering surface having a different slope from that of the first scattering surface.Type: ApplicationFiled: December 28, 2009Publication date: April 29, 2010Applicant: EPIVALLEY CO., LTD.Inventors: Chang Tae Kim, Min Gyu Na
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Publication number: 20100102351Abstract: The present disclosure relates to a semiconductor light-emitting device and a method of manufacturing the same, and more particularly, to a III-nitride semiconductor light-emitting device which improves external quantum efficiency by forming an irregular portion on a surface of a semiconductor layer by a protrusion formed on a substrate, and a method of manufacturing the same.Type: ApplicationFiled: December 23, 2009Publication date: April 29, 2010Applicant: EPIVALLEY CO., LTD.Inventors: Chang Tae Kim, Tae Hee Lee, Hyun Min Jung, Gi Yeon Nam
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Patent number: 7704883Abstract: A method for manufacturing a semiconductor device. The method comprises depositing a material layer on a semiconductor substrate and patterning the material layer with a patterning material. Patterning forms a patterned structure of a semiconductor device, wherein the patterned structure has a sidewall with a roughness associated therewith. The method also comprises removing the patterning material from the patterned structure and annealing an outer surface of the patterned structure such that the roughness is reduced.Type: GrantFiled: December 22, 2006Date of Patent: April 27, 2010Assignee: Texas Instruments IncorporatedInventors: Stephanie W. Butler, Yuanning Chen