Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) (42) of the LED and a surface of the N-face (42) is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face (42) is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

Abstract: The disclosure provides a light-emitting device comprising a substrate, an intermediate layer formed on the substrate, a first doped semiconductor layer with first conductivity-type formed on the intermediate layer, a second doped semiconductor layer with second conductivity-type formed on the first doped semiconductor layer, an active layer formed between the first doped semiconductor layer and the second doped semiconductor layer, and a patterned surface having a plurality of ordered pattern units; wherein the patterned surface is substantially not parallel to the corresponding region of the surface of the active layer.

Abstract: A light-emitting device (LED) is described which exhibits high extraction efficiency and an emission profile which is substantially more directional than from a Lambertian source. The device comprises a light generating layer disposed between first and second layers of semiconductor material, each having a different type of doping. An upper surface of the first layer has a tiling arrangement of inverted pyramidal or inverted frustro-pyramidal indentations in the semiconductor material filled by a material of different refractive index and which together comprise a photonic band structure. The indentations and their tiling arrangement are configured for efficient extraction of light from the device via the upper surface of the first layer and in a beam that is substantially more directional than from a Lambertian source. An enhanced device employs a reflector beneath the second layer to utilise the microcavity effect.

Abstract: A nitride semiconductor substrate has a first surface forming a principal surface of the substrate. A first edge is formed by beveling at least a portion of an edge of the first surface of the substrate. A scattering region is formed in at least a portion of the first edge. The scattering region scatters more external incident light than the first surface.

Abstract: To provide a light emitting element that can extract substantially all the light emitted from a luminous layer structure to the outside, a GaN substrate and a luminous layer structure are formed by growing III nitride compound semiconductor on a sapphire substrate that is a growth substrate. Thereafter, the sapphire substrate is lifted off and minute irregularities are formed on the exposed GaN substrate. The pitch of irregularities is shorter than the wavelength of light emitted from the luminous layer structure.

Abstract: The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.

Abstract: A method for manufacturing a surface-emitting semiconductor laser having a structure in which the single horizontal mode of high power is stably maintained is provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed.

Abstract: An integrated multi-layer apparatus and method of producing the same is disclosed. The apparatus comprises an LED, a beam shaping layer, and a refracting layer between the beam shaping layer from the LED. The refracting layer may have an index of refraction lower than the index of refraction of the LED and the beam shaping layer.

Abstract: There is provided a semiconductor light-emitting device having excellent light extraction efficiency and low wavelength unevenness, a manufacturing method thereof, and a lamp. A semiconductor light-emitting device includes an n-type semiconductor layer 12, a light-emitting layer 13, a p-type semiconductor layer 14, and a titanium oxide-based conductive film layer 15 laminated in this order, wherein a random concavo-convex surface 15 is formed on at least a part of the surface of the titanium oxide-based conductive film layer.

Abstract: A light emitting device (A) includes a semiconductor die (100).

Abstract: In accordance with embodiments of the invention, strain is reduced in the light emitting layer of a III-nitride device by including a strain-relieved layer in the device. The surface on which the strain-relieved layer is grown is configured such that strain-relieved layer can expand laterally and at least partially relax. In some embodiments of the invention, the strain-relieved layer is grown over a textured semiconductor layer or a mask layer. In some embodiments of the invention, the strain-relieved layer is group of posts of semiconductor material.

Abstract: A light emitting device chip is obtained by dicing a light emitting device wafer having a light emitting layer section 24 based on a double heterostructure in which a first-conductivity-type cladding layer 6, an active layer 5 and an second-conductivity-type cladding layer 4, each of which being composed of a compound semiconductor having a composition allowing lattice matching with GaAs, out of compound semiconductors expressed by formula (AlxGa1-x)yIn1-yP (where, 0?x?1, 0?y?1), are stacked in this order, and having the (100) surface appeared on the main surface thereof, and GaP transparent semiconductor layers 20, 90 stacked on the light emitting layer section 24 as being agreed with the crystal orientation thereof, so that the {100} surfaces appear on the side faces of the GaP transparent semiconductor layer.

Abstract: Method for fabricating a semiconductor chip which emits electromagnetic radiation, wherein to improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack based on GaN, which comprises an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region which is arranged between these two semiconductor layers. The surface of the p-conducting semiconductor layer which faces away from the radiation-generating region is provided with three-dimensional pyramid-like structures. A mirror layer is arranged over the whole of this textured surface. A textured reflection surface is formed between the mirror layer and the p-conducting semiconductor layer.

Abstract: A dual-scale rough structure, in which a plurality of islands are grown on a semiconductor layer by heavily doping a dopant during epitaxy of a semiconductor layer of an optoelectronics device, is provided. A plurality of pin holes are formed on the islands by lowering the epitaxial temperature. The pin holes are distributed over the top and sidewall surfaces of the islands so that the total internal reflection within the optoelectronics device can be significantly reduced so as to enhance the brightness thereof. Compared with traditional technologies, the process method of the present invention has the advantages of producing less pollution, being able to perform easily, reducing manufactured cost, increasing the efficiency of light extraction, and increasing the effective area of the dual-scale emitting surface, which is not a smooth surface, of the structure.

Abstract: A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.

Abstract: The application relates to a structure of a light emitting device and the manufacturing method thereof. The application discloses a method of forming a bonding pad of the light emitting device by chemical deposition method. The light emitting device includes a substrate, a semiconductor stack deposited on the substrate wherein the semiconductor stack includes at least a p-type semiconductor layer, an n-type semiconductor layer, and an active layer disposed between the p-type semiconductor layer and the n-type semiconductor layer. A bonding pad is formed on at least one of the p-type semiconductor layer and the n-type semiconductor layer wherein the bonding pad includes a seed layer formed by physical deposition method, and a chemically-deposited layer formed by chemical deposition method. The thickness of the seed layer is smaller than that of the chemically-deposited layer.

Abstract: A process for manufacturing an electrical device, the process comprising the steps: providing a substrate; bringing a stamp into contact with the substrate whereby areas of the substrate contacted by the stamp have decreased wettability; and depositing a liquid comprising an electrically active material over areas of the substrate located between the areas of decreased wettability.

Abstract: A method for photoelectrochemical (PEC) etching of a p-type gallium nitride (GaN) layer of a heterostructure, comprising using an internal bias in a semiconductor structure to prevent electrons from reaching a surface of the p-type layer, and to promote holes reaching the surface of the p-type layer, wherein the semiconductor structure includes the p-type layer, an active layer for absorbing PEC illumination, and an n-type layer.

Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

Abstract: A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.

Abstract: To provide a semiconductor light emitting device with a light extraction efficiency increased and a method for manufacturing the semiconductor light emitting device. A semiconductor light emitting device 1 includes a supporting substrate 2 and a semiconductor stack 6 including an MQW active layer 13 emitting light and an n-GaN layer 14 at the top. In the upper surface of the n-GaN layer 14 of the semiconductor attack 6, a plurality of conical protrusions 14a are formed. The protrusions 14a are formed so that an average WA of widths W of bottom surfaces of protrusions 14 satisfies: WA>=?/n, where X is wavelength of light emitted from the active layer and n is a refractive index of the n-GaN layer 14.

Abstract: A packaged light emitting device (LED) includes a light emitting diode configured to emit primary light having a peak wavelength that is less than about 465 nm and having a shoulder emission component at a wavelength that is greater than the peak wavelength, and a wavelength conversion material configured to receive the primary light emitted by the light emitting diode and to responsively emit light having a color point with a ccx greater than about 0.4 and a ccy less than about 0.6.

Abstract: An organic electroluminescent device includes, on a substrate, a pixel having a luminescent functional layer which is sandwiched by a first electrode and a second electrode, and a unit pixel group composed of a plurality of the pixels. A scattering portion which scatters luminescent light of the luminescent functional layer is provided in a pixel selected from the unit pixel group.

Abstract: The present invention discloses a surface roughening method for an LED substrate, which uses a grinding technology and an abrasive paper of from No. 300 to No. 6000 to grind the surface of a substrate to form a plurality of irregular concave zones and convex zones on the surface of the substrate. Next, a semiconductor light emitting structure is formed on the surface of the substrate. The concave zones and convex zones can scatter and diffract the light inside LED, reduce the horizontally-propagating light between the substrate and the semiconductor layer, decrease the probability of total reflection and promote LED light extraction efficiency.

Abstract: The present invention discloses a semiconductor light emitting device including an active layer for generating light by recombination of electron and hole between a first semiconductor layer having first conductivity and a second semiconductor layer having second conductivity different from the first conductivity, the second semiconductor layer being disposed on the active layer. The semiconductor light emitting device comprises first array including a trench having a first inclination angle, and second array including a trench having a second inclination angle different from the first inclination angle.

Abstract: Provided are a semiconductor light emitting device and a method for fabricating the same. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer comprising a dual roughness structure on the active layer.

Abstract: The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer on carved regions; the carved region is selectively etched to form a plurality of concave zones and form a plurality of convex zones; a semiconductor layer structure is epitaxially grown on the element regions and carved regions of the substrate; the semiconductor layer structure on the element regions is fabricated into a LED element with a photolithographic process.

Abstract: A packaged LED device having a textured encapsulant that is conformal with a mount surface on which at least one LED chip is disposed. The textured encapsulant, which can be textured using an additive or subtractive process, is applied to the LED either prior to or during packaging. The encapsulant includes at least one textured surface from which light is emitted. The textured surface helps to reduce total internal reflection within the encapsulant, improving the extraction efficiency and the color temperature uniformity of the output profile. Several chips can be mounted beneath a single textured encapsulant. A mold having irregular surfaces can be used to form multiple encapsulants over many LEDs simultaneously.

Abstract: An organic electroluminescent display device and a method of preparing the same are provided. The organic electroluminescent display device may include a first electrode formed on a substrate. A second electrode may be formed so as to be insulated from the first electrode. One or more organic layers may be interposed between the first electrode and the second electrode and include at least an emission layer. A protective layer may be formed so as to cover the second electrode. The protective layer may have a surface roughness (rms) of about 5 ? to about 50 ?. The organic electroluminescent display device including a protective layer having a low surface roughness may benefit from superior lifespan characteristics.

Abstract: The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. Etched features, such as truncated pyramids, may be formed on the emitting surface, prior to the RIE process, by cutting into the surface using a saw blade or a masked etching technique. Sidewall cuts may also be made in the emitting surface prior to the RIE process. A light absorbing damaged layer of material associated with saw cutting is removed by the RIE process. The surface morphology created by the RIE process may be emulated using different, various combinations of non-RIE processes such as grit sanding and deposition of a roughened layer of material or particles followed by dry etching.

Abstract: There is provided a white light emitting device that prevents a red phosphor from resorbing wavelength-converted light to improve white luminous efficiency. A white light emitting device according to an aspect of the invention includes a package body; at least two LED chips mounted to the package body and emitting excitation light; and a molding unit including phosphors, absorbing the excitation light and emitting wavelength-converted light, in regions of the molding unit divided according to the LED chips and molding the LED chips. According to the aspect of the invention, since the phosphor for converted red light can be prevented from resorbing light generated from other regions of the molding unit, the white light emitting device that can improve white luminous efficiency or control color rendering and color temperature by adjusting a mixing ratio of converted light for white light emission.

Abstract: The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the first light emitter, a p-type nitride semiconductor layer, a first active layer, an n-type nitride semiconductor layer and a conductive substrate are stacked sequentially from bottom to top. In addition, a second light emitter is formed on a partial area of the conductive substrate. In the second light emitter, a p-type AlGaInP-based semiconductor layer, an active layer and an n-type AlGaInP-based semiconductor layer are stacked sequentially from bottom to top. Further, a p-electrode is formed on an underside of the conductive submount substrate and an n-electrode is formed on a top surface of the n-type AlGaInP-based semiconductor layer.

Abstract: A light emitting diode comprising a semiconductor layer, a first electrode, a second electrode and a diamond-like carbon layer is provided. The semiconductor layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. Wherein, the light emitting layer locates between the first type doped semiconductor layer and the second type doped semiconductor layer. The first electrode is electrically connected to the first type doped semiconductor layer. The second electrode is electrically connected to the second type doped semiconductor layer. The diamond-like carbon layer covers on the semiconductor layer and exposes at least a portion of the first electrode. Moreover, the exposed outer surface of the diamond-like carbon layer is a rough surface. Alternatively, other passivation layer with rough surface can be substituted for the diamond-like carbon layer.

Abstract: A technique of ensuring compatibility between the method of improving the light extraction efficiency by roughening the surface of a LED structure, and the method of avoiding the adverse effect of a low-cost electrode pad ((1) forming a current distribution layer by a transparent conductive film made of metal or metal oxide, and (2) forming a flip chip structure). A light emitting diode has at least an n-type semiconducting layer, an active layer composed of 30 or less quantum well layers, and a p-type semiconducting layer provided on a substrate, wherein the surface of the semiconductor lamination structure contains a flat portion and a plurality of bores.

Abstract: An Epi-Structure of light-emitting device, comprising: a first semiconductor conductive layer forming on a substrate; an active layer forming on a first semiconductor conductive layer with Multi-Quantum Well (MQW); and a second semiconductor conductive layer forming on the active layer; wherein a plurality of particles formed by at least one hetero-material are scattered between the first semiconductor conductive layer and the active layer in order to form an uneven Multi-Quantum Well.

Abstract: This invention provides an optoelectronic semiconductor device having a rough surface and the manufacturing method thereof. The optoelectronic semiconductor device comprises a semiconductor stack having a rough surface and an electrode layer overlaying the semiconductor stack. The rough surface comprises a first region having a first topography and a second region having a second topography. The method comprises the steps of forming a semiconductor stack on a substrate, forming an electrode layer on the semiconductor stack, thermal treating the semiconductor stack, and wet etching the surface of the semiconductor stack to form a rough surface.

Abstract: On a GaAs substrate (1), are formed a DBR (Distributed Bragg Reflector) (3), and a light-emitting layer (5) made of a plurality of layers of AlyGazIn1-y-zP (0?y?1, 0?z?1) above the DBR (3). A semiconductor layer or a plurality of semiconductor layers (6)-(10) having a number of layers of 1 or more are formed on the light-emitting layer (5), and a grating pattern for scattering light is formed on a surface of the semiconductor layer (9) by photolithography and by etching with a sulfuric acid/hydrogen peroxide based etchant. Thus, a semiconductor device small in radiation angle dependence of light emission wavelength, as well as a manufacturing method therefor, are provided.

Abstract: A light emitting element comprises a GaP substrate and a mesa portion. The GaP substrate includes a major surface inclined to the <011> direction from the {100} plane and a side surface covered with inequalities substantially. The mesa portion has a light emitting multi-layer of InGaAlP based material provided on the major surface. A part of a light emitted from the light emitting multi-layer is extracted through the side surface of the GaP substrate.

Abstract: Methods are disclosed for forming a vertical semiconductor light-emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer; and securing a plurality of balls on a surface of the n-doped layer of the VLED device.

Abstract: A light emitting device having a simple structure that can be easily manufactured, attaining high light emitting efficiency stably for a long time is obtained, which light emitting device includes: a GaN substrate as a nitride semiconductor substrate and, on a first main surface of the nitride semiconductor substrate, an n-type AlxGa1-xN layer, a p-type AlxGa1-xN layer positioned further than the n-type AlxGa1-xN layer viewed from the nitride semiconductor substrate, and a quantum well positioned between the n-type AlxGa1-xN layer and the p-type AlxGa1-xN layer. In the light emitting device, specific resistance of the nitride semiconductor substrate is at most 0.5 ?·cm, the side of p-type AlxGa1-xN layer is mounted face-down, and the light is emitted from the second main surface 1a that is opposite to the first main surface of the nitride semiconductor substrate. The second main surface 1a of nitride semiconductor substrate has trenches formed therein.

Abstract: A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.

Abstract: Systems and methods are disclosed for fabricating a semiconductor light emitting diode (LED) device by forming an n-gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.

Abstract: There are provided a semiconductor light emitting device that can be manufactured by a simple process and has excellent light extraction efficiency and a method of manufacturing a semiconductor light emitting device that has high reproducibility and high throughput. A semiconductor light emitting device having a substrate and a lamination in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are sequentially laminated onto the substrate according to an aspect of the invention includes a silica particle layer; and an uneven part formed at a lower part of the silica particle layer.

Abstract: A device having a carrier, a light-emitting structure, and first and second electrodes is disclosed. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the active layer emitting light of a predetermined wavelength in the active layer when electrons and holes from the n-type GaN layer and the p-type GaN layer, respectively, combine therein. The first and second electrodes are bonded to the surfaces of the p-type and n-type GaN layers that are not adjacent to the active layer. The n-type GaN layer has a thickness less than 1.25 ?m. The carrier is bonded to the light emitting structure during the thinning of the n-type GaN layer. The thinned light-emitting structure can be transferred to a second carrier to provide a device that is analogous to conventional LEDs having contacts on the top surface of the LED.

Abstract: Systems and methods are disclosed for fabricating a semiconductor light emitting diode (LED) device by forming an n-gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.

Abstract: A semiconductor chip which emits electromagnetic radiation is presented. The chip includes an epitaxially produced semiconductor layer stack based on nitride semiconductor material, which includes an n-conducting semiconductor layer, a p-conducting semiconductor layer, and an electromagnetic radiation generating region, which is arranged between these two semiconductor layers. The chip further includes a base on which the semiconductor layer stack is arranged, and a mirror layer, which is arranged between the semiconductor layer stack and the base. The n-conducting semiconductor layer faces away from the base, and the n-conducting semiconductor layer or an outcoupling layer located on the n-conducting semiconductor layer has a radiation-outcoupling surface which, in turn, includes planar outcoupling sub-surfaces, which are positioned obliquely with respect to a main plane of the radiation-generating region and each form an angle of between 15° and 70° with this plane.

Abstract: The method is disclosed as applied to roughening the light-emitting surface of an LED wafer for reduction of the internal total reflection of the light generated. A masking film of silver is first deposited on the surface of a wafer to be diced into LED chips. Then the masking film is heated to cause its coagulation into discrete particles. Then, using the silver particles as a mask, the wafer surface is dry etched to create pits therein. The deposition of silver on the wafer surface and its thermal coagulation into particles may be either successive or concurrent.

Abstract: The invention discloses a semiconductor light-emitting device and a fabricating method thereof. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, a top-most layer, and at least one electrode. The multi-layer structure is formed on the substrate and includes a light-emitting region. The top-most layer is formed on the multi-layer structure, and the lower part of the sidewall of the top-most layer exhibits a first surface morphology relative to a first pattern. In addition, the upper part of the sidewall of the top-most layer exhibits a second surface morphology relative to a second pattern. The at least one electrode is formed on the top-most layer. Therefore, the sidewall of the semiconductor light-emitting device according to the invention exhibits a surface morphology, which increases the light-extraction area of the sidewall, and consequently enhances the light-extraction efficiency of the semiconductor light-emitting device.

Abstract: A semiconductor light-emitting device includes a light-emitting layer and a light extraction layer formed on the light-emitting layer and made of a resin material containing particles. The maximum size of each of the particles contained in the light extraction layer is smaller than the wavelength of emitted light penetrating through the light extraction layer.

Abstract: A semiconductor light emitting device includes a first semiconductor layer having a bottom surface with uneven patterns, an active layer formed on the first semiconductor layer, a second semiconductor layer formed on the active layer, a second electrode formed on the second semiconductor layer, and a first electrode formed under the first semiconductor layer.