Abstract: A high-frequency module is connected to a transmitting circuit (TX), a receiving circuit (RX) and an antenna (ANT) to control the connections between the transmitting circuit (TX) and the antenna (ANT) and between the receiving circuit (RX) and the antenna (ANT) The module comprises means (2) for controlling transmitted signals, which includes a first phase-shift circuit (5) and a high-frequency amplifier (4) provided between the antenna (ANT) and the transmitting circuit (TX). The high frequency amplifier (4) and the first phase-shift circuit (5) are integrated into a module composed of a plurality of dielectric layers.

Abstract: A power amplifier including: a first amplifier PA2 having an input terminal and an output terminal; a passive circuit PC3 having an input terminal and an output terminal; and a first switch SW2 having a single-pole terminal and two multi-throw terminals, one of the multi-throw terminals of the first switch SW2 being connected to the input terminal of the first amplifier PA2 and the other of the multi-throw terminals of the first switch SW2 being connected to the input terminal of the passive circuit PC3. This makes it possible to provide a power amplifier and a communication unit which can be operated with different frequencies, output powers or modulation types.

Abstract: A microwave crosspoint switch array and a method of minimizing crosstalk and dispersion in such an array are provided. The array includes a substrate lower ground plane, a substrate dielectric, including a material having a first dielectric constant, at least two signal transmission lines which are deposited upon the substrate dielectric with a minimum spacing distance between the lines, and a coverplate, including a material having a second dielectric constant and a metallized upper ground plane. The material having the first dielectric constant is substantially similar to the material having the second dielectric constant. The signal transmission lines may be metallic. The second dielectric constant may differ from the first dielectric constant by less than 50%, or by less than 25%; for example, the material having the first dielectric constant may be gallium arsenide, and the material having the second dielectric constant may be alumina.

Abstract: A radio frequency (RF) switch which is used in an RF unit of a communication apparatus and has a less insertion loss during a transmission. A strip line disposed in the RF switch is formed by combining first and second strip lines having different values of the characteristic impedance from each other.

Abstract: The present invention teaches a power amplifier having two or more output power devices and a combining network for switching the output path between these several power devices. The first output power device is designed for power efficient signal amplification at the power amplifier's highest output power level. The second output power device is designed for power efficient signal amplification at the output power level that the power amplifier is most likely to operate. Either the first or second output power device is enabled depending on the output power level. A combining network is used to transform the output impedance, as required, for the proper operation of the enabled power device. By switching between a range of power devices according to the output power level, a high level of power efficiency can be achieved across a broad range of operating states of the power amplifier.

Abstract: In an amplifier circuit 20A, outputs of two transistors 23A and 23B are connected in parallel through a power superimposition circuit 27, one ends of drain bias transmission lines 29A and 29B each having a length of &lgr;/4, where &lgr; denotes a signal wavelength, are connected to the outputs of the transistors 23A and 23B, respectively, the ends of the drain bias transmission lines 29A and 29B are connected not only to the capacitors 30A and 30B for signal grounding but also to one ends of bias supply lines 32A ad 32B, respectively, a jumper 34 is connected between the other ends of the bias supply lines 32A and 32B, and the one end of the bias supply line 32B is connected to a drain bias input terminal DB. The drain bias transmission lines 29A and 29B and the power superimposition circuit 27 are each disposed in the shape folded in one direction, and the bias supply lines 32A and 32B each extend in a straight line along a direction perpendicular to the folded direction.

Abstract: The present invention provides a method and the apparatus thereof to protect MOS components from antenna effect. Via the bypass PMOS and NMOS transistors, charges with either polarity are conveyed and neutralized. The present invention thus protects the gate oxide layer of the MOS component in the IC circuit from damage or degradation.

Abstract: A high-frequency switch having a greatly reduced occurrence of high harmonic signals includes first and second switches, and each of these two switches includes two diodes and two transmission lines. Besides, one of the two voltage control terminals is connected, via a resistor, to the intermediate connection point between the anode of one of the two diodes of the first switch and one of the two transmission lines of the first switch. The other of the voltage control terminals is connected, via another resistor, to the intermediate connection point between the anode of one of the two diodes of the second switch and one of the two transmission lines of the second switch.

Abstract: A high power PIN diode single pole double throw (SPDT) switch for use in radar systems transmitting at over 50 watts of power. These systems require a switch that will provide adequate isolation for the sensitive amplifier circuits in the receiver subsystem of the radar from the high power transmit pulses in the event there is a bias failure such that the PIN diodes are at zero bias. By utilizing one single pole single throw (SPST) switch assembly between the transmitter and the antenna and at least two SPST switch assemblies between the antenna and the receiver, this isolation is achieved.

Abstract: A composite high frequency component, comprising: a first high frequency switch having a first common port and first, second, and third communication ports, wherein: the first high frequency switch has a transfer characteristic for passing signals between the first common port and the first, second and third communication ports which are in the frequency band of the first and second communication systems as a function of at least one first control signal; a second high frequency switch having a second common port and fourth and fifth communication ports, wherein: the second high frequency switch has a transfer characteristic for passing signals between the second common port and the fourth and fifth communication ports which are in the frequency band of the third communication system as a function of at least one second control signal; a first filter having characteristic for passing signals in of the first and second communication the first filter being coupled to the of the first high frequency switch; a tr

Abstract: To effectively suppress harmonics in a dual band mobile phone with a power amplifier (10) outputting transmitting signals for different frequency bands (GSM; PCS, DCS) via a single output as described a power amplifier output circuit in which harmonics are filtered through impedance transformation of a turn-off impedance of a transmitter/receiver change over unit (36, 38). Hereby the desired filtering of harmonics may be achieved without almost no additional expenditure.

Abstract: An R.F. antenna switch (102) for coupling either a high-loss port (112) or a low-loss port (114) to a common port (110) includes an unequal power splitter (104) with the high-loss port (112), the low-loss port (114), and the common port (110). The unequal power splitter (104) further has at least one high-loss path (120) coupled between the common port (110) and the high-loss port (112) and a low-loss path (122) coupled between the common port (110) and the low-loss port (114). The R.F. antenna switch (102) further comprises a switching element (106) having an input (106A) coupled to the low-loss port (114) and an output (106B) coupled to a terminating element (108). The low-loss port (114) is terminated with the characteristic impedance of the unequal power splitter (104) when the switching element (106) is switched on.

Abstract: An HTS microwave circuit has two layers formed with metallic film on a substrate. One layer has a first circuit and another layer has a second circuit, the two circuits being coupled to one another. The second circuit has elements that are incompatible with HTS material such as MEMS technology and flip-chip technology. A microwave switch has a first layer that can carry an RF signal and a second layer that has switch elements that are controlled by a DC. signal. The RF signal and DC signal are isolated from one another. The switch elements include various technologies including a narrow HTS strip. A single layer HTS microwave switch can also be utilized where the switch element is a narrow HTS line. A method of combing HTS technology with incompatible technologies into one device is provided.

Abstract: A wireless LAN RF module uses parasitic element compensation devices in an antenna select circuit to improve port isolation. In addition, various combinations of RC filter networks and spurious radiation attenuators are incorporated into the Quad Demod/Mod and Synthesizer ;/circuits to provide suppression of EMI susceptibility and radiation throughout the RF module.

Abstract: In a mobile telephone apparatus corresponding to dual-band provided with an RF power module to operate in two kinds of different frequencies, a common harmonics control circuit is provided to the output circuit of such RF power module to realize higher efficiency in view of controlling respective harmonics power for both band frequencies. Moreover, a means for selectively setting the bias is also provided so that the maximum efficiency can be attained depending on the output power required with respective communication systems with the bias control signal output from the CPU of the control unit interlocking with selection of frequency of the mobile telephone apparatus body.

Abstract: The invention provides a filtering device of the transmission-reception switched type which can be constructed in a form with a reduced size at a low cost without having to use circuit elements such as a capacitor, a coil, and a transmission line forming a phase shift circuit which are not essential to the filtering device. Inner conductors serving as distributed-parameter resonance lines are formed in a dielectric block. There is provided a coupling line coupled with particular inner conductors. The open-circuited ends of these particular inner conductors are connected to an outer conductor via corresponding diode switches so that transmission and reception filters are switched from each other when either diode switch is selectively turned on.

Abstract: To make a variable phase shifter at low cost and that is easy to manufacture, two propagation paths for a high frequency signal are provided in parallel between the input and the output of the phase shifter. These two paths are of different lengths. An intermediate node on one of the paths is connected to an intermediate node on the other path by a PIN diode. The diode is connected to the paths by a segment of line further enhancing the length difference. By biasing the diode to a desired level, it is caused to present a particular impedance to propagation. It is shown that by acting in this way the diode can vary the phase shift between the input and the output without needing to use harmful reactive components.

Abstract: An impedance transforming device includes a first port capable of receiving first signals. A first switching device is electrically connected to the first port. The first switching device is electrically and dynamically connected to an input of one of at least two impedance transforming devices. A second switching device is electrically and dynamically connected to an output of the impedance transforming device. A second port, electrically connected to the second switching device, is capable of outputting second signals. The impedance transforming device is determined at least as a function of respective impedance transformations of the impedance transforming devices.

Abstract: A semiconductor switch includes parallel connected FETs, each FET having gate electrodes interleaved with first and second electrodes on a semiconductor substrate. An electrode interconnect connects, in a lengthwise direction of the first electrodes, mutually adjacent first electrodes. A further electrode interconnect connects second electrodes of the FETs in a direction intersecting the first electrode interconnect. A ground line connects to ground at least two of the second electrodes at the outside-most positions of the second electrodes.

Abstract: A high-frequency switch having a greatly reduced occurrence of high harmonic signals includes first and second switches, and each of these two switches includes two diodes and two transmission lines. Besides, one of the two voltage control terminals is connected, via a resistor, to the intermediate connection point between the anode of one of the two diodes of the first switch and one of the two transmission lines of the first switch. The other of the voltage control terminals is connected, via another resistor, to the intermediate connection point between the anode of one of the two diodes of the second switch and one of the two transmission lines of the second switch.

Abstract: A fully monolithic cross-point switch matrix overcomes the isolation problems between unconnected ports of the prior art. An Isolation Enhancement Network (IEN) is connected between each of the input and output transmission lines at each of the cross-points. The switch matrix is comprised of a tiled interconnection of M×N of the 1×1 switch/IEN (SIEN) cells, where N and M are the number of input and output ports respectively. Each of the SIEN cells can be independently configured into one of two operating modes, connected or unconnected. The switching element is configured to provide a high isolation path between the input and output lines in the unconnected mode of operation. In this case, a small fraction of the input signal injected at the input port appears at the output port. This output signal is comprised of two components.

Abstract: An AC signal is switched between two circuit branches using a transformer or at least one directional coupler as a coupling device. Electronically controlled switches shunt one of two terminals of the coupling device to AC ground. The input signal is propagated out of the non-shunted terminal to one of the two circuit branches. The electronically controlled switches may be relays, transistors, or diodes. Diodes prevent the AC signal from being shunted to AC ground when reverse biased and shunt the AC signal to AC ground when forward biased.

Abstract: Broadband RF circuits in which multiple circuit elements are interconnected by microstrips arranged in regular patterns on printed circuit boards have the microstrips laid out in randomly meandering paths such that adjacent paths are non-parallel and non-symmetrical about a common axis, to increase the isolation between adjacent signal paths in broadband splitters, combiners, routers, switching systems and control systems operating up to the GHz frequency range.

Abstract: A switch structure having a base surface; a first high density interconnect (HDI) plastic interconnect layer overlying the base surface layer; a cavity within the HDI plastic interconnect layer; at least one patterned shape memory alloy (SMA) layer overlying the HDI plastic interconnect layer and the cavity, and at least one patterned conductive layer over the at least one patterned SMA layer; a fixed contact pad within the cavity and attached to the base surface and a movable contact pad attached to a portion of the first patterned SMA layer within the cavity such that when the first and second patterned SMA layers and the first and second patterned metallized layers are in a first stable position, the movable contact pad touches the fixed contact pad, thereby providing an electrical connection and forming a closed switch. The structure has a second stable position in which the SMA and metallized layers are flexed away from the cavity so that the contact pads are not in contact and form an open switch.

Abstract: Disclosed is a switching circuit which has: at least one unit circuit connected in series, the unit circuit being composed of two field-effect transistors connected in series and an inductor that has one end connected to a connection point between the two field-effect transistors and another end grounded; wherein the gates of the two field-effect transistors are commonly connected and a bias voltage to control the turning on/off of the two field-effect transistors is equally applied through a resistance to the respective gates.

Abstract: This invention concerns a multi-port switching circuit which may operate at frequencies up to and even beyond 100 GHz. The invention may be implemented as a GaAs based monolithic microwave integrated circuit. The circuit comprises at least three ports arranged in a star configuration around a central ring. A single switching device is associated with each port. Each switching device is connected to two transmission lines to provide impedance matching and an interconnecting path around the ring. The transmission lines are initially chosen to have a length of a quarter wavelength at the center of the band of operation of the switch. The matching lines and the lines which form the interconnecting ring are then subject to an optimization procedures in which each pair of the switching devices is in turn modeled in their ON state which the remainder of the switching devices is modeled in their OFF state. The optimization procedure aims to achieve low transmission and insertion loss, while provide good isolation.

Abstract: A filter 10 (30) includes a laminate body 11 (31), PIN diodes PD1 and PD2 of switching elements and choke coils CC1-CC2 are mounted on a top surface or a principal face of the laminate body 11, and six external electrodes Ta-Tf extend on a side surface from the top surface to the bottom surface of the laminate body 11 (31). Three external electrodes Ta-Tc among the external electrodes Ta-Tf are formed on one side surface of the laminate body 11 (31), and three other external electrodes Td-Tf are formed on the opposing side surface of the laminate body laminate body 11 (31). The external electrode Ta is an input terminal, the external electrodes Tb and Te are control terminals for controlling a voltage supplied to the PIN diode PD, the external electrode Tc is an output terminal, and the external electrodes Td and Tf are ground terminals.

Abstract: A microwave circuit having a coupler with two microstrip conductors on a front surface of a substrate, parallel to each other, and electromagnetically coupled to each other with a coupling coefficient wherein the substrate has a rear surface on which a grounding conductor is formed. A floating conductor is interposed between the microstrip conductors. A first terminal of a switching device is connected to one end of the floating conductor while a second terminal of the switching device is grounded. By selectively turning on and off the switching device, the coupling coefficient is changed.

Abstract: An RF coupler incorporating a pair of branch circuits which combine first and second input signals supplied at the same impedance level, amplitude and phase into an output signal at the same impedance level, twice the amplitude and phase shifted with respect to the input signals when both input signals are present, and which, if only one of the input signals is present, passes that input signal through its branch circuit to the output without loss, while terminating the branch circuit associated with the absent input signal with an equal impedance.

Abstract: A high-frequency switch in which insertion losses can be reduced and a wiring pattern for supplying control voltages can be simplified. The high-frequency switch has first through fourth ports. A transmission line is connected between each pair of the ports, thereby connecting the pairs of ports to each other. A respective capacitor is coupled between each of the ports and a corresponding one of the nodes between the respective transmission lines. A diode is connected between each of said nodes and a reference potential. A capacitor is coupled between the reference potential and each of the diodes. First through fourth control voltage terminals are connected to respective nodes between each of the diodes and the corresponding capacitors.

Abstract: A duplexer includes a high-frequency switch, an LC filter serving as a low-pass filter, and an SAW filter serving as a band-pass filter. The high-frequency switch includes diodes, capacitors, and transmission lines. The LC filter includes capacitors and transmission lines. The high-frequency switch and LC filter are built into a multi-layer ceramic substrate, while the diodes of the high-frequency switch and the SAW filter are mounted on the substrate. The substrate is made of a low-temperature-baked ceramic material.

Abstract: A stand-alone circuit board (3), a packaged surface mount PIN diode (1) and a metal ribbon (9) are mounted together in a new tented diode configuration. The flat end surface of the diode end terminal (4) is attached to a metal trace (5) on the circuit board, positioning the diode in an upstanding position, overlying the metal trace and leaving the other diode end terminal (2) in an elevated position over the circuit board. The metal ribbon wraps over the diode symmetrically extending along opposed sides of the diode to complete an electrical connect on the circuit board. In performance, the configuration emulates that prior configuration employing a thick metal plate backed circuit board. An improved RF switch incorporates the foregoing tented diode configuration.

Abstract: A microstrip switch includes N-input switch arms and an output port formed from a microstrip transmission line. Each input switch arm includes one or more p-i-n diodes. The input switch arms as well as the output port are connected at a radially combined center patch. In order to improve the insertion losses at millimeter wave frequencies, the center patch is air suspended in order to reduce the parasitic shunt capacitance in order to extend the low pass frequency response of the switch.

Abstract: A first FET is connected between first and third nodes, a second FET is connected between second and fourth nodes, a third FET is connected between third and fifth nodes and a fourth FET is connected between fourth and fifth nodes. A fifth FET is connected between first and sixth nodes and a sixth FET is connected between second and sixth nodes. The gates of the first, fourth and sixth FETs are connected to a first control terminal and the gates of the second, third and fifth FETs are connected to a second control terminal. A power-supply terminal is connected to the fifth and sixth nodes. The first and second nodes are connected to a common terminal through first and second capacitors, respectively. The fifth and sixth FETs form a pull-up switching circuit. The pull-up switching circuit pulls up the source of an FET in an OFF state to the power-supply voltage and isolates the source of an FET in an ON state from the power-supply voltage.

Abstract: A transmit/receive switch includes a first quarter-wavelength transmission line coupled between an antenna port and a first variable impedance device. The first variable impedance device is coupled between the first quarter-wavelength transmission line and a signal common node. An impedance of the first variable impedance device is controllable variable between a low impedance value and a high impedance value. A second quarter-wavelength transmission line is coupled between first variable impedance device and a first port. A third quarter-wavelength transmission line is coupled between the antenna port and a second variable impedance device. The second variable impedance device is coupled between the third quarter-wavelength transmission line and the signal common node. Like the first variable impedance device, an impedance of the second variable impedance device is controllable variable between a low impedance value and a high impedance value.

Abstract: A quantum wire switch and a switching method for switching charge carriers between a first output and a second output utilizing quantum interference of the charge carriers. A quantum switch includes a quantum wire extending from an input to a first output, a second quantum wire extending from the input to a second output, and a third quantum wire extending between the first and second outputs, the three quantum wires together defining a ring. A controllable-length quantum wire electron stub tuner is connected to the ring. As charge carriers propagate from the input around the ring the stub tuner is used to control the quantum interference of the charge carriers resulting in local maxima and minima at various points around the ring. Setting the stub to a first length results in a local maximum at the first output and a local minimum at the second output, and the charge carriers can propagate to the first output and not the second output.

Abstract: A transmitting and receiving apparatus including a transmitting system and a receiving system which prevents fluctuations in insertion losses caused by changes in transmission power, while obviating the need for the provision of a battery and a current control circuit for providing a switching current, and suppresses losses in the transmission system so as to improve the power efficiency, and also decreases the cost of parts. The transmitting and receiving apparatus having a transmitter and a receiver sharing a single antenna is configured as follows. A circulator is provided at a feed point of the antenna between the transmitting system and the receiving system. Also, a changeover switch is disposed between a terminating resistor connected to ground and a point where the circulator and the receiver are connected so that the changeover switch can be automatically switched to the terminating resistor in response to input power supplied from the transmitter during transmission.

Abstract: A micro-wave mixing circuit produces producing a stable frequency conversion characteristic against a dispersion of output voltage of a local oscillation signal tapped off from a local oscillator. A micro-wave signal fed into a micro-wave signal input can be converted into an intermediate frequency signal of 1 GHz bandwidth where a stable frequency conversion characteristic is maintained against a dispersion of an output voltage of a local oscillation signal, by supplying bias current from a bias supply circuit to an anode of a Schotkky barrier diode responsive to a local oscillation output which is supplied from a local oscillator.

Abstract: A high frequency switching circuitry comprising the following elements. At least one input signal terminal is provided into which an input signal is inputted. An output signal terminal is also provided, from which an output signal is outputted. A first resistive switching circuit is connected between the input signal terminal and a first node. The first resistive switching circuit has first and second signal transmission channels having first and second resistances. The second resistance of the second channel is much higher than the first resistance of the first channel. The first resistive switching circuit switches the first and second signal transmission channels. A first switching element is connected between the first node and the output terminal. A second switching element is connected in series between the first node and a ground line.

Abstract: A high-frequency switching distributor has a simple construction that is as free of intersections as possible. The distributor includes two or more distributor circuits arranged in two planes on top of one another in a circuit board. Each distributor circuit has an input terminal, and a line connecting the input terminal to a branching circuit. The branching circuit branches into N branch lines, where each branch line has a switch for switchably connecting the branch line to one of N associated output terminals. The output terminals of the two or more distributor circuits are connected to one another.

Abstract: A composite high frequency apparatus includes a high frequency filter and a high frequency switch which have a substantially reduced size and do not require an impedance matching circuit. The apparatus includes a multilayered base having an outer surface with a plurality of diodes, an external ground electrode, an external electrode for a transmission circuit, an external electrode for a receiving circuit, an external electrode for an antenna circuit and external electrodes for control terminals located thereon. A plurality of strip lines, capacitor electrodes and an external grounding electrode are located within the multilayered base.

Abstract: A circuit selection device includes a first terminal, a plurality of transmission lines, a plurality of second terminals, a plurality of loads for impedance matching, and a plurality of switches. An RF signal is input/output to/from the first terminal. Each transmission line has one end connected to the first terminal. Each of the second terminals is arranged in correspondence with the other end of each of the transmission lines to selectively input/output an RF signal input/output to/from the first terminal. Each load is arranged in correspondence with the other end of each of the transmission lines. Each switch is switched/connected to one of the second terminal and the load which correspond to the other end of each of the transmission lines. When one of the switches is switched to the second terminal side, the remaining switches are switched to the load side.

Abstract: The switch attenuator of the invention includes: a first terminal connected to an antenna; a second terminal connected to a transmitter; and a third terminal connected to a receiver, thereby switching a first state and a second state.

Abstract: A radio frequency power combiner includes a plurality of transmission lines connecting a plurality of input terminals to an output terminal. An RF switch is positioned between each of the input terminals and a transmission line connecting the output terminal to the input terminal. The electrical length between each RF switch and the output terminal is preferably one half of a wavelength at a central frequency, which may be realized by two transmission lines of different impedances in each path, each a quarter wavelength long. When the switches are on, the signal power applied to all of the input terminals is combined at the output terminal. When any given switch is turned off, the RF power incident to the switch is reflected, and the transmission lines connected between that switch and the output terminal appear as an open circuit. The power combiner can also operate as a power divider.

Abstract: A microwave mixing circuit of a small size for selecting a signal to be received out of plural microwave signal inputs, and converting it to an intermediate frequency signal, and a down converter comprising it are provided. A microwave input signal within a band of 12 GHz applied to one microwave signal input unit is guided through a bias terminal from a comparator into a mixer diode to which a bias current is supplied, and is converted in frequency by the mixer diode. A microwave input signal applied to other microwave signal input unit is guided through the bias terminal from the comparator into a mixer diode to which bias current is not supplied, and is hence not converted in frequency by the mixer diode. As a result, only an intermediate frequency signal of 1 GHz band corresponding to the former microwave signal appears at the intermediate frequency signal output terminal.

Abstract: A compact high frequency hybrid switch suitably operated in a diversity-type antenna system. A high frequency hybrid switch is comprised of: first to fourth ports; a first high frequency switch circuit for switching a connection established between the first port and the third port; and a second high frequency switch circuit for selecting one from two connections respectively established between the first port and the fourth port, and between the second port and the fourth port. The first and second high frequency switch circuits include respective series and parallel arrangements of diodes, capacitors and distributed constant signal lines which reduce the size and improve the reliability of the switch.

Abstract: A high-frequency switch in which required resistors can be mounted without hampering the characteristics of the switch. The high-frequency switch has a series circuit formed of a first diode and a first transmission line with a node E therebetween. The first diode is connected to a transmitting circuit through a capacitor at a node A. One end of the first transmission line is coupled to a receiving circuit via a capacitor at a node B. A second transmission line and a capacitor with a node C therebetween are connected between the node A and a ground potential, while a second diode and a capacitor with a node D therebetween are coupled between the node B and a ground potential. A series circuit formed of first and second resistors with a node F therebetween is connected between the nodes C and D. A first control voltage terminal Vc1 is coupled to the node C via a resistor, while a second control voltage terminal Vc2 is connected to the node D via another resistor.

Abstract: A high-frequency switch includes first to third high-frequency switch circuits. The first high-frequency switch circuit has a first transmission line connected between a first antenna port and a first receiving circuit port, and a first diode connected between said first receiving circuit port and ground. The second high-frequency switch circuit has a third transmission line connected between a second antenna port and a second receiving circuit port, and a second diode connected between said second receiving circuit port and ground. The third high-frequency switch circuit has a third diode connected between the first antenna port and a transmitting circuit port, and a fourth diode connected between the second antenna port and the transmitting circuit port. With this configuration, ports are connected or disconnected, or connections are switched, by setting the first to fourth diodes to the on state or the off state.

Abstract: Highly reliable, light-weight, and low power-consuming microwave redundancy and re-routing electronic switches suitable for on-board satellite applications permit rearranging of communication paths for up- and down-link communications and re-routing of microwave signals to redundant devices in the event of on-board hardware failures.

Abstract: A switch has a carrier sheet with electrodes formed on an internal side thereof to form switch contacts. An armature is held in slidable contact with the internal side of the carrier and the electrodes by a magnet disposed on the external surface of the carrier. The magnet is carried in a knob mounted on the external side of the membrane carrier for rotary, linear or complex motion. When a user manipulates the knob the magnet drags the armature either into or out of shorting relation with the electrodes. A magnetic detent gear can be incorporated to provide tactile feedback. A pushbutton version of the switch can be made with a pivotable armature normally held spaced from electrodes on the substrate by a magnet. A membrane and spacer may be added to protect and seal the electrodes and armature.