Abstract: A semiconductor switch includes a main line, branch lines branching from the main line at the same branch point, switching devices shunt-connected between one of the branch lines and ground and operated so that the one of the branch lines is connected to and disconnected from ground, a main terminal connected to an end of the main line, and branch terminals connected to an end of one of the branch lines. The impedance of one of the branch lines, as seen from the branch point, is conjugately matched to the combined impedance of the main line and the rest of the branch lines, as seen from the branch point, the one of the branch lines transmitting an RF signal, and the rest of the branch lines blocking the RF signal.

Abstract: Circuitry includes a voltage-controlled switch having a transmitter input, a receiver input, and an output that connects to one of the transmitter input and the receiver input. Passive components form a low-pass filter that is electrically connected to the transmitter input. The passive components are part of a multilayer ceramic passive module that includes a base body made of superimposed dielectric layers and electrically conductive layers. The voltage-controlled switch is on an upper portion or a lower portion of the base body.

Abstract: A high-frequency switch module includes an ESD device, a switch IC, and a SAW filter element that are mounted on the surface of a multilayer substrate. A ground-side land for the ESD device is connected to an external-connection ground electrode for the ESD device by via holes and plane electrode patterns. A ground connection land for the switch IC and a ground connection land for the SAW filter element are connected to a common inner ground electrode by via holes, and are connected to a common external-connection ground electrode by via holes and another common inner ground electrode.

Abstract: Provided is a high-frequency switch formed by a first switch circuit connected in parallel to a first ?/4 signal transmission path for transmitting a transmission signal from a transmission terminal and a second switch circuit connected in parallel to a second ?/4 signal transmission path for transmitting a reception signal to a reception terminal. The high-frequency switch further includes a directivity coupler which has the first ?/4 signal transmission path as a constituent element and detects a reflected wave of the transmission signal. The directivity coupler includes: the first ?/4 signal transmission path; a ?/4 signal line arranged to oppose to the first ?/4 signal transmission path; a reflected wave output terminal connected to one end of the ?/4 signal line; and a terminal resistor connected to the other end of the ?/4 signal line.

Abstract: A transceiver is described that includes a power amplifier (PA), a low noise amplifier (LNA), and an impedance matching circuit having a first and second differential output node. The first and second differential output nodes are coupled to outputs of the PA and to inputs of the LNA. The impedance matching circuit provides a load impedance to the outputs of the PA. The transceiver further includes a first impedance device having an output impedance coupled between the first and second differential output nodes. In this way, the combination of the output impedance and the load impedance matches with an impedance at the inputs of the LNA.

Abstract: Devices and systems for using a Gallium Nitride-based (GaN-based) transistor for selectively switching signals are provided. A first transmission line is configured to connect a common connection and a first connection. A first Gallium-Nitride-based (GaN-based) transistor has a first terminal coupled to the first transmission line at a first point, a second terminal coupled to a relative ground, and a third terminal configured to be coupled to a first control connection. A second GaN-based transistor has a first terminal coupled to the first transmission line at a second point, a second terminal configured to be coupled to the relative ground, and a third terminal configured to be coupled to the first control connection.

Abstract: A transceiver capable of processing signals having wavelengths of less than 1 millimeter and/or more than 1 millimeter comprising a mixer/filter circuit coupled to an IF filter where said mixer/filter circuit is positioned within a mixer block to receive incoming signals guided into one or more feed horn openings of the mixer block by an optical arrangement. The IF filter is also disposed within the mixer block, but is positioned substantially orthogonal with respect to the mixer/filter circuit for efficient use of space.

Abstract: There is provided a high frequency switching circuit that can reduce generation of a harmonic signal without using a boost circuit.

Abstract: A single pole multiple-throw switch for switching an RF signal to one of a plurality of outputs includes coupling the signal to a throw junction, said junction having connected thereto a plurality of switch legs, each leg includes a high voltage shunt diode spaced one quarter-wavelength from the throw junction; each diode mounted at its cathode end to a capacitor and adapted to receive a bias; wherein a controller applies a first DC bias to a selected one of the diodes to cause the selected diode to operate in reverse bias mode, such that the selected diode mounted on the corresponding capacitor provides a low insertion loss to pass the RF signal from the transmission line through the selected leg and to one of the outputs; and applies a second DC bias to the other diodes to cause the other diodes to operate in forward bias mode such that the other diodes mounted onto the corresponding capacitor provides a high insertion loss for blocking the RF signal to the remaining outputs.

Abstract: A radio frequency (RF) front end circuit for connecting an antenna to a transceiver having multiple operating modes is disclosed. The circuit has a first transmit input receptive to signals of a first operating mode and a second operating mode from the transceiver. There is also a second transmit input receptive to signals of a third operating mode from the transceiver. The circuit has a first power amplifier for the first and second operating modes, a second power amplifier for the first operating mode, and a third power amplifier for the second and third operating mode. A first switch network selectively interconnects the first transmit input to a one of the second and third power amplifiers.

Abstract: A high-frequency switch is constructed by connecting a first diode and a second diode that function as switching elements, inductors, capacitors, and resistors. One end of the resistor is connected between the first diode and the second diode, and the other end of the resistor is connected to the ground. Thus, charges accumulated in the diodes in the ON states are immediately released to ground via the resistor. Accordingly, quick switching from the transmission mode to the reception mode by switching of a control power supply terminal from ON to OFF is achieved.

Abstract: A high frequency module for transmitting and receiving, for example, communication signals of GSM/DCS/PCS/WCDMA systems through a single antenna, is provided at a relatively small size and low cost. The high frequency module includes a diplexer arranged to separate communication signals from the antenna into GSM communication signals in lower frequency bands and POS/DOS/WODMA communication signals in higher frequency bands, a diode switch circuit that is connected to a input and output terminal of the GSM communication signal of the diplexer and is arranged to switch transmission and reception of the GSM communication signal, and a multipoint GaAsIC switch that is connected to the GSM/DCS/PCS/WCDMA communication signals of the diplexer and is arranged to switch transmission and reception of these signals. The high frequency module switches the four types of communication signals by changing the patterns of controls signals VcG, VC1, and Vc2 that are applied to the diode switch circuit and the GaAsIC switch.

Abstract: A printed circuit board having a micro strip line, a printed circuit board having a strip line and a method of manufacturing thereof are disclosed. The printed circuit board having a micro strip line in accordance with an embodiment of the present invention includes a first insulation layer, a signal line buried in one surface of the first insulation layer, a plurality of conductors penetrating through the first insulation layer and being disposed on both sides of the signal line in parallel with the signal line, and a ground layer formed to be electrically connected to the conductor on the other surface of the first insulation layer.

Abstract: A single-pole-double-throw switch is provided, which is configured to be integrated with a bandpass filtering function and includes four quarter-wavelength transmission lines connected in series, five resonators connected in parallel to each other, and four transistors connected in parallel to four of the five resonators. When two of the four transistors are turned on and the others are turned off, the single-pole-double-throw switch is equivalent to a third-order quarter-wavelength short-circuited stub bandpass filter.

Abstract: Provided is a switching apparatus connecting a transmission line designated among transmission lines, between input and output terminals, and preventing a signal at the terminal from leaking to a control wiring, becoming a noise, and being superposed onto a signal at the other end. The switching apparatus includes: a plurality of input series switches switching the connection state between one end of the transmission lines and the input terminal according to a control signal; a plurality of output series switches switching the connection state between the other end of the transmission lines and the output terminal according to a control signal; a plurality of control wirings that supply a control signal to the input series switch and the output series switch; and a noise removal section that is provided between the input series switch and the output series switch and that reduces a noise propagated via a control wiring.

Abstract: According to one exemplary embodiment, a switching device with phase selection terminals to select between at least two phase shifting modes to reduce intermodulation distortion in the switching device includes a first phase selection terminal to select a first phase shifting mode of the switching device by enabling a first transmission line in a first phase shifting switching branch coupled to an input of the switching device. The switching device further includes a second phase selection terminal to select a second phase shifting mode of the switching device by enabling a second phase shifting switching branch coupled to the switching device input. The intermodulation distortion in the switching device is reduced by selecting one of the first and second phase shifting modes. The first transmission line is enabled by enabling a FET coupled in series with the first transmission line in the first phase shifting switching branch.

Abstract: A circuit including: at least one radio frequency microstrip conductor; and, a least one vanadium oxide region electrically coupled to the at least one radio frequency microstrip conductor; wherein, the at least one vanadium oxide region is substantially conductive in a first temperature range, and substantially non-conductive in a second temperature range.

Abstract: The present invention provides a high-frequency switch including: a first switching element connected between a first input/output terminal and a second input/output terminal; a second switching element connected between the second input/output terminal and the first switching element; a high-frequency line provided between the first input/output terminal, the first switching element, and a third input/output terminal; and a third switching element connected between the third input/output terminal, the high-frequency line, and a ground. By connecting the first switching element, the second switching element, the high-frequency line, and the third switching element, because there exists no FET through which a large current flows when a state between the first input/output terminal and the third input/output terminal is set to a transmission state which requires high power handling capability, there is no need to use an FET having a large gate width, which is effective in reducing a loss of the switch.

Abstract: Four SP4T switches (31-34) are grouped in twos to form two switch pairs. First conductive lines (411-414, 421-424) are arranged in fours between the SP4T switches (31, 34; 32, 33) constituting the switch pairs. Each of four second conductive lines (51-54) connects to a corresponding one of different conductive lines of the first conductive lines which connect to the respective switch pairs. The first and second conductive lines are arranged on a dielectric layer having a lower surface on which a ground conductor (6) is formed. The dielectric, layer has a two-layer structure. The first conductive lines are arranged on the first dielectric layer as a lower layer. The second conductive lines are arranged on the second dielectric layer as an upper layer. This arrangement makes it possible to attain a reduction in the size of a matrix switch and a reduction in loss and allow broadband operation.

Abstract: The embodiments of the present invention provide a directional coupler switchable between a normal state and a bypass state. In one embodiment, the directional coupler comprises shunt switches for switching between the normal state and the bypass state, and first and second transmission lines each extending between first and second ends, wherein the shunt switches comprises a first switch coupled to the first end of the first transmission line, a second switch coupled to the first end of the first transmission line, and a third switch coupled between the second end of the first transmission line and the second end of the second transmission line.

Abstract: The switch circuit 1 includes a common terminal 10 (common port), a plurality of branch terminals 22, 24, a common path P0 connecting the common terminal 10 and a diverging point N, branch paths P1, P2 connecting the diverging point N and the branch terminals 22, 24 respectively, distributed constant FETs 32, 34 respectively provided in the branch paths P1, P2, and transmission lines 42, 44 provided between the diverging point N on the branch paths P1, P2 and the distributed constant FETs 32, 34 respectively. Here, the transmission lines 42, 44 are longer than 45% of ?/4 but shorter than ?/4, when ? designates a propagation wavelength under an operating frequency.

Abstract: A single-pole-double-throw switch is provided, which is configured to be integrated with a bandpass filtering function and includes four quarter-wavelength transmission lines connected in series, five resonators connected in parallel to each other, and four transistors connected in parallel to four of the five resonators. When two of the four transistors are turned on and the others are turned off, the single-pole-double-throw switch is equivalent to a third-order quarter-wavelength short-circuited stub bandpass filter.

Abstract: A switch circuit includes a balanced line connected between one end of an unbalanced line having another end connected to an input terminal and an output terminal and a balanced line connected between the one end of the unbalanced line and an output terminal. On each of the balanced lines, a plurality of quarter-wave transmission lines are connected in cascade, and each of a plurality of FETs, whose impedance is controllable, is connected between one pair of transmission lines constituting a balanced line for each interconnection point between the transmission lines, so that the power of a signal is distributed to both of the pair of transmission lines, and therefore the inputted power becomes half on each balanced line, thereby making it possible to prevent a DC-like current from flowing when the FET is in an off state even if a high frequency signal with high power is inputted.

Abstract: In a transmission/reception selection switch, a first diode is arranged in series with a transmission signal line and a second diode is arranged in shunt with a reception signal line. A first current route where a direct current passes through the first diode is connected in parallel to a second current route where a direct current passes through the second diode. When a predetermined positive voltage is applied to a control terminal, the diodes are turned ON and a direct current flows through, in order, the control terminal, a resistor, an inductor, the diode, a strip line, and an inductor), and a direct current flows through, in order, the control terminal, the resistor, the second diode, and the inductor.

Abstract: A compact multilayer signal processing system. In the illustrative embodiment, the system is adapted for use with microwave signals. The system includes a first mechanism for receiving an input signal and selectively routing the input signal onto a first signal path. A second mechanism routes the input signal along the first signal path vertically through one or more layers to a first circuit component. The first circuit component outputs an adjusted signal in response to receipt of the input signal. A third mechanism directs the adjusted signal to the output of the system. In a specific embodiment, the one or more layers include one or more groundplane layers. In this embodiment, the first mechanism includes an input switching network in communication with a controller. The switching network is positioned on a switching layer and communicates with one or more controllers to facilitate selectively switching the input signal onto one of plural input signal paths.

Abstract: An on-chip antenna switching scheme for Gigahertz frequencies where for the transmission path a first on-chip switching means is coupled between an on-chip power amplifier and an antenna. In the receiving path a second on-chip switching means at an input to an on-chip low noise amplifier (LNA) connects to ground. Coupled off-chip between the first switching means and antenna and antenna and the second switching means are impedance matching means and a half and a quarter wavelength line, respectively. In transmission mode both switching means are closed, in receiving mode both switching means are open. This allows for optimal transmission of the signal in either direction.

Abstract: A high-frequency switch operating in a millimeter wave band that includes a signal path having a ?/4 transmission path, for part of two or more branch signal paths that branch from an input connection path via a branch point; an FET, which is shunt-connected between a grounding end and the branch signal paths that are positioned between the ?/4 transmission path and a terminal end, as viewed from the branch point, and used to connect or disconnect the branch signal paths and the grounding end; an output matching circuit, which is positioned on the branch signal paths that are positioned between a terminal end and a connection point for the FET as viewed from the branch point, and includes a shunt-connected stub; and a matching FET, which is connected between the stub and the grounding end and used to connect or disconnect the stub and the grounding end in accordance with the FET's connection/disconnection.

Abstract: A high-frequency switch includes a transmission terminal, an antenna terminal, a reception terminal, and a voltage-control terminal; a first diode, the cathode thereof being electrically connected to the transmission terminal, and the anode being electrically connected to the antenna terminal; a first transmission line, electrically connected between the antenna terminal and the reception terminal; a second diode, the cathode thereof being electrically connected to the reception terminal, and the anode being electrically connected to the voltage-control terminal; a second transmission line, one end thereof being electrically connected to the transmission terminal, and the other end being connected to ground; and a capacitor, electrically connected between the voltage-control terminal and ground. The above high-frequency switch can be miniaturized and has superior performance.

Abstract: A front end module comprises a diplexer, a first duplexer, and a second duplexer. The first duplexer is connected to the diplexer through a first high frequency switch and separates transmission signals and reception signals of the N-CDMA from each other. The second duplexer is connected to the diplexer through a second high frequency switch and separates transmission signals and reception signals of the W-CDMA from each other. Each of the duplexers includes acoustic wave elements. A single multi-layer substrate for integration is used to integrate the components of the front end module. The diplexer is made up of a conductor layer located inside or on the surface of the multi-layer substrate.

Abstract: In a circuit for connection of at least two signal sources with at least one signal output, the signal sources are connected with a control unit. The control unit activates or deactivates the signal sources by transmission of control signals. Each signal source is connected with a blocking unit. Each blocking unit is connected with the control unit. The blocking unit can block or enable a connection between the signal source and the signal output, with the connection being automatically enabled when the signal source is activated.

Abstract: High power, high frequency switches include a transmission line having at least three portions that are serially coupled between an input port and an output port to define at least two nodes and to carry a high power, high frequency signal between the input port and the output port. First and second power transistors are provided. At least a third power transistor also is provided. The controlling electrode(s) (gate) of the first, second and/or third power transistor(s) are responsive to a switch control input. The controlled electrodes (source/drain) of a respective one of the first and second power transistors, and of a respective one of the third power transistor(s) are serially coupled between a respective one of the at least two nodes and a reference voltage. The power transistors may be silicon carbide MESFETs.

Abstract: A small-sized, low-cost radio frequency switch circuit, which has good characteristics of isolation between a transmission circuit and a reception circuit, includes a multi-layered substrate; a transmission line provided on the top surface of, or within, the multi-layered substrate; a first diode and a second diode connected respectively to both ends of the transmission line; a resistor, connected to the first diode, to apply a current to the first diode and the second diode; a first capacitor whose one end is connected to the resistor and whose other end is grounded; and a second capacitor connected in parallel to the transmission line.

Abstract: A high-power PIN diode switch for use in applications such as plasma processing systems is described. One illustrative embodiment comprises an input terminal; an output terminal; and first and second transmission-line elements connected in parallel to the input and output terminals, each of the first and second transmission-line elements including a thermoconductive dielectric substrate and a microstrip line disposed on the thermoconductive dielectric substrate, the microstrip line including a plurality of substantially parallel sections that are magnetically coupled, electrically connected in series, and arranged so that electrical current flows in substantially the same direction in adjacent substantially parallel sections to mutually reinforce the magnetic fields associated with the adjacent substantially parallel sections.

Abstract: A RF switch can be used in a wide frequency range and can be manufactured at a low cost. The RF switch changes a signal passing through a waveguide with a variable device that is switchable between the first state in which the variable device has a high resistance and the second state in which the variable device has a low resistance, depending on the direction in which current flows through the variable device. The RF switch includes a high-frequency transmission circuit including the waveguide and at least one variable device, a driver circuit including at least one variable device, and a signal circuit for changing current supplied to the variable devices of the high-frequency transmission circuit and the driver circuit for switching between the first and second states of the variable devices.

Abstract: The first terminals of a plurality of resistor elements are connected to the intermediate connection points of a plurality of FETs connected in series, and a voltage, having a phase opposite to that of the voltage applied to the gate terminals of the plurality of FETs, is applied to the second terminals of the plurality of resistor elements. With this configuration, the potentials at the intermediate connection points of the plurality of FETs connected in series can be prevented from lowering. As a result, the power that can be handled can be increased. Furthermore, since the potentials at the intermediate connection points of the plurality of FETs connected in series can be prevented from lowering, the deterioration of the distortion characteristic and the isolation characteristic owing to the lowering of the potentials at the intermediate connection points of the plurality of field-effect transistors connected in series is prevented, and excellent high-frequency characteristics are obtained.

Abstract: A high frequency switch circuit device includes: at least one distributed element of at least one transmission line; at least two lumped elements of at least one resistor and at least one capacitor; at least one semiconductor device; at least one input terminal; at least two output terminals; and another transmission line, having an open end or a short-circuited end, connected to the input terminal. A total length of the input terminal and said another transmission line is set to be about an integer times ?/2 in case the transmission line has the open end and about an integer times (?/4+?/2) in case the transmission line has the short-circuited end. One of the output terminals is used as an input port to which a signal is inputted, and another one of the output terminals is used as an output port from which a signal is outputted.

Abstract: To provide a high frequency switch capable of dealing with multiple frequency bands without having plurality of switch circuits. A first diode that conducts due to a bias current when a first switch is closed is interposed between a first signal terminal and a second signal terminal. A strip line with the electrical length L1 is connected to the cathode of the first diode, the other end being grounded. At a position with the distance L2 from one end of the strip line, a capacitor and a second switch are connected to be equivalently grounded when a second switch is closed. The strip line resonates with the electrical length L1 when the second switch is opened, and resonates with the electrical length L2 when the second switch is closed.

Abstract: A switch network for switching network inputs to network outputs includes an initial terminal, an intermediate, and a final terminal layer of switches. The initial terminal layer of switches provides fan-out of the network inputs to widely separated locations in the intermediate layer. The intermediate layer of switches includes two sublayers: a first sublayer providing horizontally aligned fan-outs to the final terminal layer of switches and a second sublayer providing vertically aligned fan-outs to the final terminal layer of switches. The final terminal layer of switches includes a left sublayer and a right sublayer. The left sublayer provides fan-in from the vertically aligned fan-outs and the horizontally aligned fan-outs to the network outputs; the right sublayer provides fan-in from the vertically aligned fan-outs and the horizontally aligned fan-outs to the network outputs; and the fan-in provided by the left sublayer is orthogonal to the fan-in provided by the right sublayer.

Abstract: The present invention relates to an electrical space switch matrix having m input ports and n output ports, the switch matrix comprising (m.n)/(i.j) switch blocks, each having i input ports and j output ports, where i is less than m and j is less than n; and a plurality of input elements and a plurality of output elements, the plurality of input elements and plurality of output elements being arranged so as to connect the switch blocks to the input and output ports of the switch matrix. In an embodiment of the invention, the input and output elements can be power splitters and power combiners respectively and are arranged so as to include crossover connection paths therebetween, with the result that crossover of connection paths is distributed between the power dividing/combining function and the switching function.

Abstract: The first terminals of a plurality of resistor elements are connected to the intermediate connection points of a plurality of FETs connected in series, and a voltage, having a phase opposite to that of the voltage applied to the gate terminals of the plurality of FETs, is applied to the second terminals of the plurality of resistor elements. With this configuration, the potentials at the intermediate connection points of the plurality of FETs connected in series can be prevented from lowering. As a result, the power that can be handled can be increased. Furthermore, since the potentials at the intermediate connection points of the plurality of FETs connected in series can be prevented from lowering, the deterioration of the distortion characteristic and the isolation characteristic owing to the lowering of the potentials at the intermediate connection points of the plurality of field-effect transistors connected in series is prevented, and excellent high-frequency characteristics are obtained.

Abstract: The present invention provides a transceiver circuit that includes a transmission amplifier coupled with an antenna input/output node. The transmission amplifier is configured to amplify communications to be transmitted from the transceiver circuit. The transceiver circuit further includes a receiver and a field effect transistor. The receiver includes a receiver input coupled with the antenna input/output node. The field effect transistor is coupled between the receiver input and an electrical reference. The field effect transistor is configured to provide an open circuit when communications are received at the receiver input and to provide a closed circuit when communications are not being received at the receiver input.

Abstract: A multi-layer cross connect having high isolation between signal channels, the multi-layer cross connect comprising: (a) a multi-layer circuit board having a top and bottom orientation and comprising at least a bottom layer and one or more upper layers; (b) a plurality of microstrip launches along the perimeter of the bottom layer; (c) a plurality of striplines on the bottom layer, each stripline being connected to one and only one microstrip launch and comprising a transformer for lowering its impedance and thereby increasing its width, the striplines comprising first striplines and second striplines; (d) a plurality of transition vias, each transition via conductively coupling each of the second striplines to a stripline on an upper layer; and (e) a combiner on each layer for combining signals from multiple striplines to a common stripline.

Abstract: A high frequency switching component for being connected to a transmission circuit, a reception circuit, and an antenna to be used for switching to either a state in which the transmission circuit is connected to the antenna, or a state in which the reception circuit is connected to the antenna, comprising: a multilayer circuit board, on which there is formed a circuit including: a transmission circuit terminal to be connected to the transmission circuit; a reception circuit terminal to be connected to the reception circuit; an antenna terminal to be connected to be the antenna; a ground terminal; a first diode whose anode is connected to the transmission circuit terminal and the cathode thereof is connected to the antenna terminal; a second diode whose anode is connected to the reception circuit terminal and the cathode thereof is connected to the ground terminal; a signal line for connecting the transmission circuit terminal, the reception circuit terminal, and the antenna terminal via the first diode; and

Abstract: Four switching circuit sections consisting of four FETs connected in series are provided between a plurality of input/output terminals which output and input a high frequency signal. Gate control voltages are individually applied to gate terminals of four FETs, respectively, so that an on-state and an off-state are achieved. Further drain control voltages are individually applied to drain terminals or source terminals of the FET in each switching circuit section, and a voltage according to an electric power value of the high frequency signal supplied to each of switching circuit sections is supplied as the gate control voltage and the drain control voltage.

Abstract: A high-frequency switch circuit is provided for switching a connection between a common transmission circuit and antenna side circuit in a plurality of transmitting and receiving systems. The high-frequency switch includes a connection between the antenna side circuit and a reception circuit in one of the plurality of transmitting and receiving systems, and a connection between the antenna side circuit and a reception circuit in the other of the plurality of transmitting and receiving systems, the high-frequency switch circuit comprising a first diode; a first distributed constant line; a second diode; a capacitor; a third diode; a second distributed constant line; and a fourth diode.

Abstract: To provide a high frequency switch capable of dealing with multiple frequency bands without having plurality of switch circuits. A first diode that conducts due to a bias current when a first switch is closed is interposed between first signal terminal and a second signal terminal. A strip line with the electrical length L1 is connected to the cathode of the first diode, the other end being grounded. At a position with a distance L2 from one end of the strip line, a capacitor and a second switch are connected to be equivalently grounded when the second switch is closed. The strip line resonates with the electrical length L1 when the second switch is opened, and resonates with the electrical length L2 when the second switch is closed.

Abstract: A high-frequency switch circuit is provided for switching a connection between a common transmission circuit and an antenna side circuit in a plurality of transmitting and receiving systems. The high-frequency switch includes a connection between the antenna side circuit and a reception circuit in one of the plurality of transmitting and receiving systems, and a connection between the antenna side circuit and a reception circuit in the other of the plurality of transmitting and receiving systems, the high-frequency switch circuit comprising a first diode, a second diode, and a distributed constant line, wherein a third diode is connected to the first and second diodes through the distributed constant line.

Abstract: The vertical placement of the series and shunt PIN diodes of a microline series-shunt PIN diode switch results in an increased upper frequency limit of the switch.

Abstract: A radio frequency (RF) switch which is used in an RF unit of a communication apparatus and which has less of an insertion loss during a transmission. A strip line disposed in the RF switch is formed by combining first and second strip lines having different values of characteristic impedance from each other.

Abstract: A switchable combiner and apparatus for providing intergrated combiner unit, which can reduce problem due to frequent substitution of unit. The apparatus for providing intergrated combiner unit includes the means of; a) dividing input signal according to basic type, redundancy type or power division/coupling type; b) switching the transmitted signal to power amplifier; c) switching the transmitted signal to the means of combining; and d) combining the transmitted signal according to basic type, redundancy type or power division/coupling type.