Abstract: A method of structuring a photosensitive material is disclosed. The method includes illuminating a first object structure and projecting a pattern of the first object structure onto a photosensitive material such that the projected pattern of the first object structure is focussed at a first focus position with respect to the photosensitive material. The method also includes illuminating a second object structure and projecting a pattern of the second object structure onto the photosensitive material such that the projected pattern of the second object structure is focussed at a second focus position with respect to the photosensitive material. The respective patterns are projected in the same projection direction.

Abstract: An adjusting method that adjusts an immersion exposure apparatus that comprises a first holder, which holds a substrate, and a second holder, which holds the substrate before the substrate is held by the first holder, and that exposes the substrate, which is held by the first holder, through a liquid. The adjusting method comprises: holding a thermometer with the first holder; holding the thermometer with the second holder; and adjusting the temperature of at least one of the first holder and the second holder based on the detection result of the thermometer held by the first holder and the detection result of the thermometer held by the second holder.

Abstract: A method includes directing a beam of radiation along an optical axis toward a workpiece support, measuring a spectrum of the beam at a first time to obtain a first profile, measuring the spectrum of the beam at a second time to obtain a second profile, determining a spectral difference between the two profiles, and adjusting a position of the workpiece support along the optical axis based on the difference. A different aspect involves an apparatus having a workpiece support, beam directing structure that directs a beam of radiation along an optical axis toward the workpiece support, spectrum measuring structure that measures a spectrum of the beam at first and second times to obtain respective first and second profiles, processing structure that determines a difference between the two profiles, and support adjusting structure that adjusts a position of the workpiece support along the optical axis based on the difference.

Abstract: Disclosed herein are a maskless exposure apparatus configured to perform exposure by tilting a beam spot array with respect to a scan direction (Y-axis direction) thus preventing stitching stripes and a stitching method using the same. A step distance, in which exposure dose uniformity in a stitching area is within a tolerance range, is calculated using actual position data of beam spots constituting the beam spot array on an exposure plane, and if necessary, using beam power data and/or beam size data. As exposure is performed based on image data conforming to the step distance, the stitching area has a uniform exposure dose, enabling exposure without stitching stripes.

Abstract: Manufacturing of semiconductor devices often involves performed photolithography to pattern and etch the various features of those devices. Such photolithography involves masking and focusing light onto a surface of the semiconductor device for exposing and etching the features of the semiconductor devices. However, due to design specifications and other causes, the semiconductor devices may not have a perfectly flat light-incident surface. Rather, some areas of the semiconductor device may be raised or lowered relative to other areas of the semiconductor device. Therefore, focusing the light on one area causes another to become unfocused. By carefully designing a photomask to cause phase shifts of the light transmitted therethrough, focus across all areas of the semiconductor device can be achieved during photolithography, which results in sharp and accurate patterns formed on the semiconductor device.

Abstract: A lithographic projection apparatus includes a projection optics having a last element, by which an exposure light is projected onto an upper surface of a wafer through liquid covering a portion of the upper surface. The last element has a convex-shape incident surface, an exit surface from which the exposure light is emitted, and an outer surface arranged above the exit surface. The outer surface of the last element has a lower portion, and extends radially-outwardly and upwardly from the lower portion. The apparatus also includes a gap along the outer surface of the last element, the gap being defined between the outer surface of the last element and an opposing surface.

Abstract: An immersion lithographic projection apparatus having a megasonic transducer configured to clean a surface and a method of using megasonic waves through a liquid to clean a surface of an immersion lithographic projection apparatus are disclosed. A flow, desirably a radial flow, is induced in the liquid.

Abstract: According to example embodiments, a method of operating an exposure apparatus including a stage having a plurality of beam measurement devices, and an exposure head unit having a first set of exposure heads and a second set of exposure heads includes measuring a position of a first exposure head of the first set of exposure heads by moving the stage to coincide a first beam measurement device of the plurality of beam measurement devices with the first exposure head, setting the measured position of the first exposure head as a reference position, and measuring positions of the second set of exposure heads with respect to the reference position.

Abstract: An individual mirror is used to construct a facet mirror. A mirror body of the individual mirror is configured to be tiltable relative to a rigid carrier body about at least one tilting axis of a tilting joint. The tilting joint is configured as a solid-body joint. The solid-body joint, perpendicular to the tilting axis, has a joint thickness S and, along the tilting axis, a joint length L. The following applies: L/S>50. The result is an individual mirror to construct a facet mirror, which can be reproduced and is precisely adjustable and simultaneously ensures adequate heat removal, in particular, heat produced by residually absorbed useful radiation, which is reflected by the individual mirror, by dissipation of the heat by the mirror body.

Abstract: An immersion lithographic apparatus is provided having a table configured to support a substrate; a sensor or target for a sensor is provided on a surface of the table and a cover is provided extending from an edge of the table; in addition, a liquid displacement device is provided including a gas outlet configured to direct a localized gas flow towards the sensor or target so as to displace liquid from the sensor or target over the cover and off the table.

Abstract: An apparatus and method for nanopatterning of substrates using the demagnified Talbot effect, wherein: (a) large arrays of nanostructures can rapidly be printed; (b) short extreme ultraviolet wavelengths permits sub-100 nm spatial resolution; (c) the de-magnification factor can be continuously adjusted, that is, continuously scaled; (d) the patterning is the effect of the collective diffraction of numerous tiled units that constitute the periodic array, giving rise to error resistance such that a defect in one unit is averaged over the area of the mask and the print does not show any defects; (e) the Talbot mask does not wear out since the method is non-contact; and (f) the feature sizes on the mask do not have to be as small as the feature sizes desired on the target, are described. The apparatus includes a source of coherent radiation having a chosen wavelength directed onto a focusing optic, the reflected converging light passing through a Talbot mask and impinging on a target substrate.

Abstract: A projection exposure system (10) for microlithography which includes: a mask holding device (14) holding a mask (18) with mask structures (20) disposed on the mask, a substrate holding device (36) holding a substrate (30), projection optics (26) imaging the mask structures (20) onto the substrate (30) during an exposure process, and a measurement structure (48) disposed in a defined position with respect to a reference element (16) of the projection exposure system (10), which defined position is mechanically uncoupled from the position of the mask holding device (14). The projection exposure system (10) also includes a detector (52) arranged to record an image of the measurement structure (48) imaged by the projection optics (26). The projection exposure system (10) is configured such that during operation of the projection exposure system (10) the imaging of the mask structures (20) and the imaging of the measurement structure (48) take place at the same time by the projection optics (26.

Abstract: A scanning exposure apparatus measures levels of a substrate at a predetermined position on the substrate during an acceleration period and during a constant velocity period, obtains a correction value for a measurement error due to factors associated with acceleration based on the difference between the measurement results at the predetermined position, corrects the level of the substrate measured at a first measurement point using the obtained correction value when the substrate is exposed at a given position after the level of the substrate at the given position is measured at the first measurement point during the acceleration period.

Abstract: A method for repairing a collector for an EUV projection exposure apparatus having a first coating and a second coating, wherein the first coating is arranged between the second coating and a surface of the collector. The method includes completely or partly removing the first coating by treatment with a first chemical solution, and applying a new first coating.

Abstract: An exposure apparatus comprises a controller configured to control scanning of an original holding unit and a substrate holding unit so as to expose a first pattern forming area onto a second pattern forming area exposed in advance on the substrate via a second projection optical system having a second projection magnification differing from a first projection magnification with the first pattern forming area superimposed on the second pattern forming areas. In particular, the controller changes the operation of the original holding unit or the substrate holding unit among the plurality of second pattern forming areas based on the state of the second pattern forming areas or the state of the patterns formed on the original while the first pattern forming areas are scanning-exposed onto the plurality of second pattern forming areas in a single scanning between the original holding unit and the substrate holding unit.

Abstract: Optical radiation patterns at two wavelengths, an “imaging” wavelength and a “masking” wavelength, are superimposed on a photochromic layer, wherein the masking wavelength induces optical absorbance in the layer, allowing the imaging wavelength to transmit only through narrow transmittance zones where the masking-wavelength radiation has an optical null. The patterns are preferably formed as a focal-point array. At each focal point a focused-radiation spot at the imaging wavelength is superimposed with an annular-radiation spot at the masking wavelength. The spots may be generated by an array of microlenses with focal points proximate the layer. (Several novel types of dual-wavelength microlenses are disclosed.) Alternatively, the focused-radiation spots may be generated in separate optical paths for the two wavelengths, and optically combined at the photochromic layer by means of beam-combining and projection optics.

Abstract: An apparatus and method for measuring thermo-mechanically induced reticle distortion or other distortion in a lithography device enables detecting distortion at the nanometer level in situ. The techniques described use relatively simple optical detectors and data acquisition electronics that are capable of monitoring the distortion in real time, during operation of the lithography equipment. Time-varying anisotropic distortion of a reticle can be measured by directing slit patterns of light having different orientations to the reticle and detecting reflected, transmitted or diffracted light from the reticle. In one example, corresponding segments of successive time measurements of secondary light signals are compared as the reticle scans a substrate at a reticle stage speed of about 1 m/s to detect temporal offsets and other features that correspond to spatial distortion.

Abstract: Provided is a barrel support device for supporting a lens barrel. The barrel support device may include a guide frame configured to laterally support the lens barrel and tilt with the lens barrel, a rotation guide on a first end of the guide frame, the rotation guide being ring shaped and configured attach the lens barrel to the guide frame, and a ring-shaped tilting frame configured to support a second end of the guide frame and tilt the guide frame, wherein the guide frame, the rotation guide, and the tilting frame are configured to allow the lens barrel to pass therethrough.

Abstract: A scatterometer for measuring a property of a substrate includes a focus sensing arrangement including an arrangement (65) that directs a first beam of radiation onto a focusing arrangement, to be detected by a focus sensor arrangement (61). A focus controller (67) provides control signals representative of the relative positions of the focusing arrangement (15, 69) and the substrate (W), which are required to focus the first beam of radiation on the substrate. An actuator arrangement adjusts the position of the focusing arrangement dependent on the control signals. An irradiation arrangement directs a second beam of radiation onto the substrate using the focusing arrangement, a measurement detector (18) detecting the second radiation beam after reflection from the substrate. A focus offset arrangement adjusts the focus produced by the focusing arrangement to compensate for an offset between the focusing of the first beam of radiation and the second beam of radiation.

Abstract: A method of, and associated apparatus for, determining focus corrections for a lithographic projection apparatus. The method comprises exposing a plurality of global correction fields on a test substrate, each comprising a plurality of global correction marks, and each being exposed with a tilted focus offset across it; measuring a focus dependent characteristic for each of the plurality of global correction marks to determine interfield focus variation information; and calculating interfield focus corrections from the interfield focus variation information.

Abstract: A dose and focus monitor structure includes at least one complementary set of unit dose monitors and at least one complementary set of unit focus monitors. Each complementary set of unit dose monitors generate edges on a photoresist layer such that the edges move in opposite directions as a function of a dose offset. Each complementary set of unit focus monitors generates edges on the photoresist layer such that the edges move in opposite directions as a function of a focus offset. The dose and focus monitor structure generates self-compensating differential measurements of the dose offset and the focus offset such that the dose offset measurement and the focus offset measurement are independent of each other.

Abstract: The invention relates to a lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate, wherein apparatus is operable to measure higher-order distortions and/or image plane deviations of the patterning device, apparatus comprising: a device for transmission image detection; and a processor configured and arranged to model higher-order distortions of the patterning device using signals received from the device for transmission image detection; wherein patterning device has a main imaging field, and a perimeter and apparatus is operable to model higher-order distortions using signals resultant from alignment structures comprised in perimeter and/or in the imaging field.

Abstract: An exposure apparatus which includes a plurality of units to be temperature-regulated, and transfers a pattern of a reticle onto a substrate while activating the plurality of units is disclosed. The exposure apparatus comprising a plurality of flow passages which run parallel to each other and through which a fluid to temperature-regulate the plurality of units flows, a bypass line which runs parallel to the plurality of flow passages so as to bypass the plurality of flow passages, and a flow rate controller configured to control a flow rate of fluid flowing through the bypass line, so that a total flow rate of the fluid flowing through the plurality of flow passages and the bypass line becomes a target flow rate.

Abstract: A detector to measure a property of radiation is disclosed. The detector comprises first and second luminescent uniaxial crystals each having an optic axis, the optic axis of the first uniaxial crystal being arranged such that it is substantially perpendicular to the optic axis of the second uniaxial crystal.

Abstract: A lithographic projection apparatus is disclosed that comprises a substrate table, a projection system, a liquid confinement structure and a thermal measurement system. The substrate table is configured to support a substrate. The projection system is configured to direct a patterned beam of radiation on to a target portion of the substrate. The liquid confinement structure is configured to at least partly confine an immersion liquid to a space between the projection system and the substrate, the substrate table, or both. The thermal measurement system comprises a thermally sensitive coating. The thermal measurement system is configured to detect the temperature of the immersion liquid in contact with the coating. Also disclosed is a thermal measurement system, a metrology system comprising the thermal measurement system and a dummy wafer for the thermal measurement system.

Abstract: The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

Abstract: Improved low k1 lithographic imaging is disclosed by optimizing or improving an illumination polarization condition. The polarization condition may be a pre-defined spatially varying polarization, or a spatially customized local polarization of bright illumination points based on tracking a value of a desired lithographic response. Several non-traditional polarization conditions, e.g., TM/TE polarization (with or without a central TM region), diagonal polarization, and Y+X polarization (typically for dark field illumination) are disclosed, that offer substantial imaging advantages for specific lithographic problems, especially at low k1 values. The initial polarization definition may be limited to specific fixed polarization angles.

Abstract: A light beam generating apparatus and method of controlling the same is provided. The light beam generating apparatus may include a light source, a beam expander collimating a light beam emitted from the light source, an optical shutter selectively transmitting a light beam transmitted through the beam expander, and a focusing lens focusing a light beam transmitted the optical shutter. The optical shutter in the light generating apparatus can selectively transmit a light beam based on on/off control of the optical shutter on a pixel-by-pixel basis. This may permit one-dimensional, two-dimensional and three-dimensional nano patterns having various periods and directions to be manufactured.

Abstract: A lithographic method, among things is disclosed. The method includes using information at least indicative of a desired shape or size of a constituent part of a device to implement the desired shape or size of the constituent part of the device, the desired shape or size being related to a measured property of a layer of material in which the constituent part of the device is to be created, at least a part of the implementation comprising determining a configuration of a plurality of individually controllable elements that would be necessary to create in a radiation beam a pattern which is sufficient to implement the desired shape or size of the constituent part of the device when creating the constituent part of the device.

Abstract: A microlithography projection optical system is disclosed. The system can include a plurality of optical elements arranged to image radiation having a wavelength ? from an object field in an object plane to an image field in an image plane. The plurality of optical elements can have an entrance pupil located more than 2.8 m from the object plane. A path of radiation through the optical system can be characterized by chief rays having an angle of 3° or more with respect to the normal to the object plane. This can allow the use of phase shifting masks as objects to be imaged, in particular for EUV wavelengths.

Abstract: According to one embodiment, a scan control unit, a focus control unit, and a focus control region setting unit are provided. The scan control unit performs scan control of exposure light on an XY plane, the focus control unit performs focus control of the exposure light, and the focus control region setting unit sets a focus control region such that focus control ranges in an X-axis direction and in a Y-axis direction on the XY plane are different each other.

Abstract: The disclosure pertains to an optical apparatus, in particular for microlithography, that includes an optical module, a support structure and a connection apparatus. The connection apparatus includes at least one connection unit which includes a first connector part and a second connector part. The first connector part is connected to the optical module, and the second connector part is connected to the support structure.

Abstract: An optical assembly has at least one mirror with a mirror body. The latter is carried by a support body, which has a first support body portion and a second support body portion. An at least thermally separating region is arranged between the two support body portions. At least one surface portion of at least one of the support body portions or of a body thermally coupled thereto is modified in such a way that a thermal emission coefficient ?m of the modified surface portion differs from a thermal emission coefficient ?u of the unmodified surface portion by at least 10%. The result is an optical assembly, in which an improved thermal stability is achieved by the predetermining of the thermal emission coefficients.

Abstract: Disclosed are apparatus and methods for determining optimal focus for a photolithography system. A plurality of optical signals are acquired from a particular target located in a plurality of fields on a semiconductor wafer, and the fields were formed using different process parameters, including different focus values. A feature is extracted from the optical signals related to changes in focus. A symmetric curve is fitted to the extracted feature of the optical signals as a function of focus. An extreme point in the symmetric curve is determined and reported as an optimal focus for use in the photolithography system.

Abstract: A lithography apparatus includes a measuring station that includes a first measuring device configured to measure a height of a substrate holder, and a second measuring device configured to measure a height of a surface of a substrate held by the holder, and a patterning station that includes a third measuring device configured to measure a height of the holder, and patterns the substrate held by the holder based on an output of the second measuring device. The patterning station includes a fourth measuring device configured to measure a height of a surface of a substrate held by the holder. The lithography apparatus includes a controller configured to obtain a correction value for an output obtained from at least one of the first and third measuring devices based on outputs of the second and fourth measuring devices with respect to a substrate held by the holder.

Abstract: A lithographic apparatus includes a patterning subsystem for transferring a pattern from a patterning device onto a substrate controlled in accordance with recorded measurements of level variations across a surface of the substrate. A level sensor is provided for projecting a level sensing beam of radiation to reflect from a location on the substrate surface and for detecting the reflected sensing beam to record the surface level at said location. The level sensor incorporates at least one moving optical element to scan the substrate surface by optical movement in at least one dimension to obtain measurements of surface level at different locations without mechanical movement between the level sensor and the substrate. Optical path length equalization measures may be employed, using shaped reflectors and/or additional moving mirrors, to avoid focus variation during the scan.

Abstract: A method for improving imaging properties of an optical system and an optical system of this type having improved imaging properties are described. The optical system can have a plurality of optical elements. In some embodiments, an optical element is positioned and/or deformed by mechanical force action and by thermal action. In certain embodiments, one optical element is positioned and/or deformed by mechanical force action and another optical element is deformed by thermal action.

Abstract: An interferometric displacement measuring system operable to measure displacements of a movable object of the lithographic apparatus in a first direction using a measurement beam of radiation and a reflector. The reflector being substantially planar and substantially perpendicular to the first direction. Calibration is obtained using a first set of measurements of the angular position movable object. A phase offset in the measurement beam is affected. A second set of measurements of the angular position of the movable object is obtained. The interferometric displacement measuring system is calibrated based on the first and second sets of measurements.

Abstract: A method of mitigating asymmetric lens heating in photolithographically patterning a photo-imageable material using a reticle includes determining where first hot spot locations are expected to occur on a lens when using a reticle to pattern a photo-imageable material. The reticle is then fabricated to include non-printing features within a non-printing region of the reticle which generate additional hot spot locations on the lens when using the reticle to pattern the photo-imageable material. Other implementations are contemplated, including reticles which may be independent of method of use or fabrication.

Abstract: Provided is a digital exposure device. The digital exposure device includes a stage mounted with a substrate on which a pattern is formed, a first light source, a first head, and a digital micro-mirror device control unit. The stage is configured to move in a scan direction. The first light source is configured to provide a first light. The first head is spaced apart from the stage in a first direction and is configured to receive the first light, to generate at least one spot beam by modulating the first light, and to project the at least one spot beam onto the substrate. The digital micro-mirror device control unit is configured to control an energy of the at least one spot beam generated from the first head to be inversely proportional to a size of the at least spot beam generated from the first head.

Abstract: An interferometric lithography system produces a pattern having a sharp field edge and minimal optical path length difference. Light passes through a beamsplitter into an input prism. The two beams produced by the beamsplitter are reflected off respective surfaces of the input prism toward a substrate prism. The substrate prism is symmetric to the input prism such that the incidence angle at an image plane is approximately equal to the beamsplitter diffraction angle. Alternatively, light passes through a beamsplitter into a prism. The two beams produced by the beamsplitter are reflected off respective surfaces of the prism toward an output surface of the prism, such that the incidence angle at the output surface is approximately equal to the beamsplitter diffraction angle. A plurality of these interferometers can be stacked, each being optimized for a given pitch, such that the stack provides a variable pitch interferometry system.

Abstract: An apparatus and method for detecting extreme ultraviolet (EUV) radiation is disclosed. The apparatus includes a detector having a top surface, a layer of scintillation material on the top surface of the detector, a layer of spacer material on the layer of scintillation material, and a spectral purity filter layer on the layer of spacer material. The method includes directing the EUV radiation through the spectral purity filter layer and through the spacer material layer. The spacer material layer may be disposed between the spectral purity filter layer and a layer of scintillation material. The method further includes detecting scintillation radiation emitted by the scintillation material using the detector.

Abstract: A microlithography projection objective includes an optical element, a manipulator configured to manipulate the optical element, and a control unit configured to control the manipulator. The control unit includes a first device configured to control movement of the manipulator, a memory comprising an upper bound for a range of movement of the manipulator, and a second device configured to generate a merit function based on a square of a root mean square (RMS) of at least one error and configured to minimize the merit function subordinate to the upper bound for the range of movement of the manipulator.

Abstract: An exposure apparatus for forming a predetermined pattern on a substrate by using exposure light, includes a stage apparatus which is movable with respect to an optical axis of the exposure light; a light-transmissive member provided at the stage apparatus, wherein a liquid is supplied on an upper surface of the light-transmissive member; and a measurement device which is settable below the light-transmissive member when measurement using the measurement device is performed. Leakage or entrance of a liquid used for exposure into an optical measurement device such as a wavefront aberration measurement device can be prevented, thereby enabling preferable optical adjustment such as imaging performance or optical characteristics.

Abstract: Conventionally, during a copy operation, certain advanced mode settings make the extraction of additional security information impossible. In order to solve this problem, the print control apparatus includes: determining unit for determining an interval between a pattern element and a pattern element adjacent to the pattern element from the received image data; and control unit for performing a control so as to scale the image at a magnification specified by a user and have the scaled image printed by a printing apparatus when the product of the magnification specified by the user and the interval determined by the determining unit falls within a predetermined range, and configured to terminate or interrupt the printing of the image by the printing apparatus when the product of the magnification specified by the user and the interval determined by the determining unit does not fall within the predetermined range.

Abstract: In a lithographic projection system, a corrective optic in the form of one or more deformable plates is mounted within telecentric image or object space for making one-dimensional or two-dimensional adjustments to magnification. The deformable plate, which can be initially bent under the influence of a preload, contributes weak magnification power that influences the magnification of the projection system by changing the effective focal length in object or image space. An actuator adjusts the amount of curvature through which the deformable plate is bent for regulating the amount of magnification imparted by the deformable plate.

Abstract: A lithographic apparatus includes a support to support a patterning device, the patterning device being capable of imparting a radiation beam with a pattern in its cross-section to form a patterned radiation beam, a substrate table constructed to hold a substrate, and a projection system configured to project the patterned radiation beam onto a target portion of the substrate. The lithographic apparatus includes a projection transfer measurement system to measure an optical projection transfer information of the projection system. The projection transfer measurement arrangement includes: an optical device to direct a measurement beam into the projection system during a scanning movement, a detector to detect the measurement beam having passed through the projection system during the scanning movement, and a measurement processor to determine the optical projection transfer information from the detected measurement beam.

Abstract: A lithography method is proposed employing a projection exposure system having a catoptric imaging optics comprising a mirror formed as phase mask in the imaging beam path, wherein the mirror formed as phase mask exhibits continuous regions having dielectric layers provided thereon. Optionally, the regions of the mirror formed as phase mask are configured such that an axial extension of an image of a point (DOF) of the imaging is increased or/and a lateral extension of an image of a point of the imaging is decreased. Preferably multiple exposures of a same radiation sensitive substrate are performed in order to achieve an increase in resolution and scaling down of the manufacturing trace structures (61, 61?), respectively.

Abstract: A method of manufacturing a semiconductor device in which the alignment accuracy of an immersion exposure device is maintained even when exposure steps are carried out intermittently. In the method, a substrate is placed on a stage of an exposure device (substrate placing step). Then, a first liquid is supplied to between the substrate and the optics system of the exposure device to expose the substrate through the first liquid (exposure step). A second liquid is supplied from a different place from the first liquid to a drainage groove provided around the stage at least in a period other than when the first liquid is supplied onto the stage, in order to suppress change in the temperature of the exposure device.

Abstract: A method of calibrating an inspection apparatus. Obtaining a surface level measurements (LS) at respective level sensing locations LS(x,y). Determining focus settings (LPA, LPB) for exposure field regions (EFA, EFB) in accordance with surface level measurements (LSA, LSB) having level sensing locations corresponding to the respective exposure field region. Exposing exposure field regions (EFA, EFB) with focus offsets (FO1, FO2) defined with reference to the respective focus settings (LPA, LPB) to produce target patterns at respective target locations. Obtaining focus-dependent property measurements, such as Critical Dimension (CD) and/or side wall angle (SWA) of the target patterns measured using the inspection apparatus; and calibrating the inspection apparatus using the focus-dependent property measurements (CD/SWA) and the respective focus offsets (FO1, FO2). The calibration uses surface level measurements (e.g., LSB(3)) having a level sensing location (e.g.