Abstract: In one aspect, a linear sensor includes at least one magnetoresistance element that includes a first spin valve and a second spin valve positioned on the first spin valve. The first spin valve includes a first set of reference layers having a magnetization direction in a first direction and a first set of free layers having a magnetization direction in a second direction orthogonal to the first direction. The second spin valve includes a second set of reference layers having a magnetization direction in the first direction and a second set of free layers having a magnetization direction in a third direction orthogonal to the first direction and antiparallel to the second direction. The first direction is neither parallel nor antiparallel to a direction of an expected magnetic field.

Abstract: An assembly for sensing corrosion of a member is disclosed. The assembly has a housing having a bottom surface that is external-surface-disposable on the member, and a sensor array disposed at least partially in the housing, the sensor array including a first sensor and a second sensor. The first sensor and the second sensor are magnetoresistive sensors. The first sensor is disposed at up to 3 centimeters from the bottom surface of the housing. The second sensor is disposed at between 1 inch and 8 inches from the bottom surface of the housing.

Abstract: A magnetic device and method for providing the magnetic device are disclosed. The magnetic device includes a multilayer structure and a magnetic layer. The multilayer structure includes alternating layers of A and E. A includes a first material. The first material includes at least one of Co, Ru, or Ir. The first material may include an IrCo alloy. E includes at least one other material that includes Al. The other material(s) may include an alloy selected from AlGa, AlSn, AlGe, AlGaGe, AlGaSn, AlGeSn, and AlGaGeSn. A composition of the multilayer structure is represented by A1-xEx, where x is at least 0.45 and not more than 0.55. The magnetic layer includes an Al-doped Heusler compound. The magnetic layer shares an interface with the multilayer structure.

Abstract: The magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a Heusler alloy layer including a crystal region and an amorphous region.

Abstract: A position detection unit includes a magnetic sensor and a first magnetic field generator. The first magnetic field generator is spaced from and opposed to the magnetic sensor in a first-axis direction, includes a first multipolar magnet, and generates a first magnetic field to be exerted on the magnetic sensor. The first multipolar magnet includes N and S poles adjacent to each other along a plane orthogonal to the first-axis direction. The magnetic sensor and the first magnetic field generator are relatively movable with respect to each other along a second-axis direction orthogonal to the first-axis direction. A center position of the magnetic sensor in a third-axis direction orthogonal to both of the first-axis direction and the second-axis direction is different from a position in the third-axis direction of an interface between the N and S poles adjacent to each other in the third-axis direction.

Abstract: An apparatus is provided which comprises: a stack comprising a magnetic insulating material (MI such as EuS, EuO, YIG, TmIG, or GaMnAs) and a transition metal dichalcogenide (TMD such as MoS2, MoSe2, WS2, WSe2, PtS2, PtSe2, WTe2, MoTe2, or graphene), wherein the magnetic insulating material has a first magnetization; a magnet with a second magnetization, wherein the magnet is adjacent to the TMD of the stack; and an interconnect comprising a spin orbit material, wherein the interconnect is adjacent to the magnet.

Abstract: An angle sensor includes a first magnetic sensor that outputs a first signal, a second magnetic sensor that outputs a second signal, and a processor that performs processing for generating an angle detection value. The processing for generating the angle detection value includes first processing for determining a first candidate value of the angle detection value, second processing for performing processing for determining an (n+1)th candidate value either once or more than once while incrementing n in value by one each time, the (n+1)th candidate value being determined by performing second computing processing using the first and second signals, first and second strengths, and an nth candidate value of the angle detection value, where n is an integer of 1 or more, and third processing for assuming the candidate value last determined by the second processing as the angle detection value.

Abstract: A touch structure including an insulating substrate, an electromagnetic shielding structure layer, a sensing circuit structure layer, a first insulating layer, and a second insulating layer is provided. The electromagnetic shielding structure layer is disposed on the insulating substrate, and located between the insulating substrate and the sensing circuit structure layer. The sensing circuit structure layer is disposed on the insulating substrate, and includes a first sensing circuit layer and a second sensing circuit layer. The first insulating layer is disposed between the electromagnetic shielding structure layer and the first sensing circuit layer. The second insulating layer is disposed between the first sensing circuit layer and the second sensing circuit layer.

Abstract: A magnetic memory device includes a conductive line extending in a first direction, a bottom electrode provided on a portion of a bottom surface of the conductive line, a free layer and a pinned layer stacked on the conductive line, a spacer layer between the free layer and the pinned layer, and a top electrode provided on a portion of a top surface of the pinned layer. The conductive line, the free layer, the pinned layer and the spacer layer have side surfaces perpendicular to the first direction, and the side surfaces are aligned with each other.

Abstract: The present disclosure generally related to read heads having dual free layer (DFL) sensors. The read head has a sensor disposed between two shields. The sensor is a DFL sensor and has a surface at the media facing surface (MFS). Behind the DFL sensor, and away from the MFS, is a rear hard bias (RHB) structure. The RHB structure is disposed between the shields as well. In between the DFL sensor and the RHB structure is insulating material. The RHB is disposed on the insulating material. The RHB includes a RHB seed layer as well as a RHB bulk layer. The RHB seed layer has a thickness of between 26 Angstroms and 35 Angstroms. The RHB seed layer ensures the read head has a strong RHB magnetic field that can be uniformly applied.

Abstract: A write head for a data storage device comprises a main pole, a trailing shield, and a write-field enhancement structure disposed in a write gap between the main pole and the trailing shield. The write-field enhancement structure comprises a non-magnetic spacer, a non-magnetic layer, and a magnetic DC-field-generation (DFG) layer. The DFG layer is sandwiched between the non-magnetic layer and the non-magnetic spacer. The write head also includes at least one magnetic notch adjacent to at least one of the main pole or the trailing shield. The non-magnetic spacer is adjacent to a magnetic notch. Some embodiments include multiple magnetic notches. Also disclosed are data storage devices comprising such write heads.

Abstract: A buffer layer can be used to smooth the surface roughness of a galvanic contact layer (e.g., of niobium) in an electronic device, the buffer layer being made of a stack of at least four (e.g., six) layers of a face-centered cubic (FCC) crystal structure material, such as copper, the at least four FCC material layers alternating with at least three layers of a body-centered cubic (BCC) crystal structure material, such as niobium, wherein each of the FCC material layers and BCC material layers is between about five and about ten angstroms thick. The buffer layer can provide the smoothing while still maintaining desirable transport properties of a device in which the buffer layer is used, such as a magnetic Josephson junction, and magnetics of an overlying magnetic layer in the device, thereby permitting for improved magnetic Josephson junctions (MJJs) and thus improved superconducting memory arrays and other devices.

Abstract: A magnetic sensor detects a Z-axis magnetic field via a yoke and enhances the accuracy with which a magnetic field is detected. The magnetic sensor has a first magnetic field detecting element that is arranged in a plane that includes a first direction and a second direction. The second direction is perpendicular to the first direction. The first magnetic field detecting element detects a magnetic field in the first direction. In a soft magnetic body that is adjacent to the first magnetic field detecting element in the first direction, L/W is equal to or more than 10, where W is a length of the soft magnetic body in the first direction, and L is a length of the soft magnetic body in the second direction.

Abstract: A magnetic system containing a plurality of stacked layer arrays, each of which includes a first anti-ferromagnetic (AFM1) layer, a heavy metal (HM) layer formed of a material having strong spin-orbit coupling, and, optionally, a ferromagnetic (FM) layer or a second anti-ferromagnetic (AFM2) layer. Also disclosed is a method of preparing such a magnetic system.

Abstract: According to one embodiment, a magnetic device comprising a magnetoresistive effect element, wherein the magnetoresistive effect element includes: a first ferromagnetic body, a second ferromagnetic body, and a first rare-earth ferromagnetic oxide that is provided between the first ferromagnetic body and the second ferromagnetic body and magnetically joins the first ferromagnetic body and the second ferromagnetic body.

Abstract: A bead immobilization method including receiving at least one bead in at least one well in a casting surface, and casting a casting material over the casting surface to form a reverse casting in which the at least one bead is cast onto at least one post upstanding from a surface of the reverse casting.

Abstract: A giant magnetoresistive (GMR) sensor for reading information from a magnetic storage medium has a first non-magnetoresistive layer, a first magnetoresistive layer formed on the first non-magnetoresistive layer, a second non-magnetoresitive layer formed on the first magnetoresistive layer, a second magnetoresistive layer formed on the second non-magnetoresistive layer, and a third non-magnetoresistive layer formed on the second magnetoresistive layer. The first non-magnetoresistive layer is provided with a single step on a surface of the first non-magnetoresistive layer. The step has an edge extending in a direction substantially parallel to a plane of a working surface of the GMR sensor.

Abstract: An integrated AMR angular sensor includes a first sensor resistor and a second sensor resistor. The first sensor resistor and the second sensor resistor each has a plurality of magnetoresistive segments containing magnetoresistive material that are electrically coupled in series. The magnetoresistive segments of each sensor resistor are parallel/anti-parallel to each other. The magnetoresistive segments of the second sensor resistor are perpendicular to the magnetoresistive segments of the first sensor resistor. The first magnetoresistive segments are divided into a first group and a second group, which are disposed in a balanced distribution relative to a sensor central point of the integrated AMR angular sensor. Similarly, the second magnetoresistive segments are divided into a first group and a second group, which are disposed in a balanced distribution relative to the sensor central point.

Abstract: The present disclosure generally relates to SHE-MRAM memory cells. A memory cell array comprises one or more memory cells, wherein each of the one or more memory cells comprises a gate electrode, an insulating layer, a spin orbit material electrode, a MTJ, and a top electrode parallel to the gate electrode. The gate electrode and the top electrode are perpendicular to the spin orbit material electrode. By applying a voltage to the gate electrode, passing a current along the spin orbit material electrode, and utilizing Rashba and/or spin Hall effects, writability of select memory cells is enhanced, allowing for individual memory cells to be written upon without disturbing neighboring memory cells. Additionally, Rashba and/or spin Hall effects in neighboring memory cells may be suppressed to ensure only the selected memory cell is written.

Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a main pole, a spin Hall structure surrounding at least a portion of the main pole at a location that is recessed from a media facing surface (MFS), and a spin-torque structure surrounding at least a portion of the main pole at the MFS. Spin-orbit torque (SOT) is generated from the spin Hall structure. The spin-torque structure magnetization switching (or precession) is induced by the SOT. The SOT based head with the spin-torque structure increases both track density (tracks per inch) and linear density (bit per inch). The areal density capability (ADC), which is the product of tracks per inch and bit per inch, can be further improved by removing the side shield and the leading shield, when the spin-torque structure is utilized in the SOT based head.

Abstract: A computer program product according to one embodiment includes a computer readable storage medium having program instructions embodied therewith. The program instructions area executable by a data processing system having at least one processor to cause the data processing system to apply, by the data processing system, a current to a lead of a tunneling magnetoresistance (TMR) sensor for inducing joule heating of the lead or a heating layer, the level of joule heating being sufficient to anneal a magnetic layer of the sensor; and maintain, by the data processing system, the current at the level for an amount of time sufficient to anneal the sensor.

Abstract: An apparatus includes a spin torque oscillator, a sensor, and a processing unit. The spin torque oscillator is configured to receive a current and to generate a microwave output signal. The sensor is configured to detect the microwave output signal and to detect changes to frequency of the detected microwave output signal responsive to changes in an external magnetic field. The processing unit is configured to receive a sensed signal from the sensor. The processing unit is further configured to process the sensed signal and the changes to the frequency to determine magnitude and direction associated with the external magnetic field.

Abstract: A spin valve element may include a plurality of magnetic element groups. Each magnetic element group may be formed, at least in part, by a plurality of magnetic elements being connected in parallel. Each magnetic element may include an intermediate layer and a pair of ferromagnetic layers sandwiching the intermediate layer. The plurality of magnetic element groups may be connected together in series or in parallel. The plurality of magnetic elements may be configured to undergo a microwave oscillation and are placed in proximity sufficient that oscillation signals are configured to be generated with the magnetic elements mutually synchronized. The proximity may include a range equal to a wavelength of the microwave oscillation.

Abstract: A magnetic memory array and a method for implementing the magnetic memory array for use in Solid-State Drives (SSDs) are provided. A plurality of magnetic pillar memory cells is formed using a deposition and/or growth process to produce a magnetic memory array substantially avoiding milling of magnetic materials.

Abstract: The present invention addresses the problem of providing an element which uses the current-perpendicular-to-plane giant magnetoresistance (CPPGMR) effect of a thin film having the three-layer structure of ferromagnetic metal/non-magnetic metal/ferromagnetic metal. The problem is solved by a magnetoresistive element provided with a lower ferromagnetic layer and an upper ferromagnetic layer which contain a Heusler alloy, and a spacer layer sandwiched between the lower ferromagnetic layer and the upper ferromagnetic layer, the magnetoresistive element being characterized in that the spacer layer contains an alloy having a bcc structure. Furthermore, it is preferable for the alloy to have a disordered bcc structure.

Abstract: A magnetic capacitor includes a first electrode layer formed by depositing a first conducting material including graphene, a second electrode layer formed by depositing a second conducting material including graphene, and an insulator layer located between the first electrode layer and the second electrode layer. The magnetic capacitor further includes a first magnetized layer that includes one or more first ferro-magnetic elements that are magnetized to apply a first magnetic field to the insulator layer, and a second magnetized layer that includes one or more second ferro-magnetic elements that are magnetized to apply a second magnetic field to the insulator layer. The insulator layer is located between the first magnetized layer and the second magnetized layer. The first magnetic field and the second magnetic field improve a first electrical property of the magnetic capacitor.

Abstract: A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.

Abstract: A magnetic device includes a free layer; a pinned layer; a tunnel barrier disposed between the free layer and the pinned layer; a polarization enhancement layer disposed between the tunnel barrier and the pinned layer; and a blocking layer disposed between the polarization enhancement layer and the pinned layer, wherein the blocking layer includes a first diffusion trap layer and a second diffusion trap layer disposed on the first diffusion trap layer.

Abstract: A reader stack, such as for a magnetic storage device, the stack having a top synthetic antiferromagnetic (SAF) layer, a magnetic capping layer adjacent to the top SAF layer, an RKKY coupling layer adjacent to the magnetic capping layer opposite the top SAF layer, and a free layer adjacent to the RKKY coupling layer opposite the magnetic capping layer. Also included is a method for biasing a free layer in a reader stack by providing an exchange coupling between the free layer and a top synthetic antiferromagnetic (SAF) layer using a layer having RKKY coupling property positioned between the free layer and the top SAF layer and a magnetic capping layer between the SAF layer and the layer having RKKY coupling property.

Abstract: An apparatus includes a perpendicular magnetic anisotropy magnetic tunnel junction (pMTJ) device. The pMTJ device includes a storage layer and a reference layer. The reference layer includes a portion configured to produce a ferrimagnetic effect. The portion includes a first layer, a second layer, and a third layer. The second layer is configured to antiferromagnetically (AF) couple the first layer and the third layer during operation of the pMTJ device.

Abstract: Various exemplary embodiments relate to a magnetometer device to measure oscillation frequency, including a feedthrough loop including an amplifier and a voltage bias connected to a first input of a metallic membrane; a membrane ground connected to a membrane output; a fixed plate including a first fixed plate output connected to a second input of the amplifier, wherein the fixed plate is physically separated from the metallic membrane but connected to the metallic membrane by a Lorentz force, and where the physical separation differs due to an angle of a magnetic field relative to a direction of a current; a second fixed plate output sensitive to the Lorentz force; and a circuit connected to the second fixed plate output to calculate an angle of the magnetic force based upon the Lorentz force.

Abstract: A scissor type magnetic sensor having a magnetic bias structure extending from the back edge of first and second magnetic free layers. The magnetic bias structure is constructed of a magnetic material having a high magnetic moment, such as NiFe with a high Fe content or CoFe. The high magnetic moment bias structure reduces magnetic signal asymmetry while also maintaining high signal amplitude.

Abstract: A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.

Abstract: A magnetic element may be configured with at least a magnetic stack having first and second magnetically free layers that each has a predetermined stripe height from an air bearing surface (ABS). The first and second magnetically free layers can respectively be configured with first and second uniaxial anisotropies that are crossed in relation to the ABS and angled in response to the predetermined stripe height.

Abstract: A magnetic sensor with increased sensitivity, lower noise, and improved frequency response is described. The sensor's free layer is ribbon shaped and is closely flanked at each long edge by a ribbon of magnetically soft, high permeability material. The side stripes of soft magnetic material absorb external field flux and concentrate the flux to flow into the sensor's edges to promote larger MR sensor magnetization rotation. Side stripes may be located in the plane of the free layer a maximum distance of 0.1 microns, above a plane that includes a top surface of the free layer, or below a plane that includes the bottom surface of the magnetic sensor. Edges of each side stripe may be aligned above or below a portion of the magnetic sensor.

Abstract: A current measurement apparatus includes multiple GMR elements and a calculation unit. The multiple GMR elements each include a pinned magnetic layer having a pinned magnetization direction, and a free magnetic layer having a magnetization direction to be changed by an external magnetic field. The calculation unit obtains the magnitude of a current to be detected, from outputs of the multiple GMR elements. The multiple GMR elements are disposed in ring shape around a conductor through which the current to be detected flows, and are electrically connected so as to form a series variable resistor by using the multiple GMR elements. The magnetization directions of the pinned magnetic layers are pinned in the same direction when viewed from an extension direction of the conductor at each of the positions of the elements.

Abstract: An ST-MRAM structure, a method for fabricating the ST-MRAM structure and a method for operating an ST-MRAM device that results from the ST-MRAM structure each utilize a spin Hall effect base layer that contacts a magnetic free layer and effects a magnetic moment switching within the magnetic free layer as a result of a lateral switching current within the spin Hall effect base layer. This resulting ST-MRAM device uses an independent sense current and sense voltage through a magnetoresistive stack that includes a pinned layer, a non-magnetic spacer layer and the magnetic free layer which contacts the spin Hall effect base layer. Desirable non-magnetic conductor materials for the spin Hall effect base layer include certain types of tantalum materials and tungsten materials that have a spin diffusion length no greater than about five times the thickness of the spin Hall effect base layer and a spin Hall angle at least about 0.05.

Abstract: A disk drive slider supports a microwave-assisted magnetic recording (MAMR) write head with a spin-torque oscillator (STO) and a separate corrosion monitor (CM). The CM includes a corrosion detection layer formed of the same material as the STO's spacer layer. The CM is coplanar with the STO but laterally spaced from the STO. The corrosion detection layer has an edge at the ABS so as to be exposed to the same atmospheric conditions as the STO's spacer layer. Electrical leads are located at the ends of the CM and are electrically connected to pads on the upper surface of the slider. Electrical resistance of the CM is measured by detection of current in the plane of the corrosion detection layer.

Abstract: An information-storage device comprises an information-storage medium, a transducer operable to write and to read information on the information-storage medium, and a sealed enclosure enclosing the same in an interior space containing an atmosphere comprising a gas mixture including a substantially inert gas and oxygen gas having a molar concentration between about 0% and about 10%. The sealed enclosure includes a base, a cover, and a seal that joins cover to base. The information-storage device may include at least one oxygen permeable component integrated with the sealed enclosure. The information-storage device further comprises an oxygen absorbing device operable to remove a substantial portion of oxygen gas from the atmosphere within. The oxygen absorbing device includes an oxygen absorbent material comprising oxygen-deficient cerium oxide, CeO2-x, where 0<x<0.5, and a membrane permeable to transport of oxygen, that prevents particles escaping therefrom.

Abstract: A microwave-assisted magnetic recording (MAMR) head according to one embodiment includes a main magnetic pole adapted to generate a writing magnetic field when current is applied to a write coil; a trailing shield positioned, at an air bearing surface (ABS), in a trailing direction from the main magnetic pole; and a field generation layer (FGL) positioned, at the ABS, between the main magnetic pole and the trailing shield, wherein either a portion of the main magnetic pole closer to the FGL or a portion of the trailing shield closer to the FGL is adapted to act as a spin polarization layer.

Abstract: The embodiments disclosed generally relate to a read device in a magnetic recording head. The read device uses parametric excitation to injection lock the STO to an external AC signal with a frequency that is two times the resonance frequency, or more. The field from the media acting on the STO causes a change in the phase between the STO output and the external locking signal, which can be monitored using a phase detection circuit. The injection locking improves the STO signal to noise ratio and simplifies the detection circuit.

Abstract: A magnetic field sensor having a support with a top side and a bottom side, whereby a Hall plate is provided on the top side of the support and the Hall plate comprises a carbon-containing layer.

Abstract: The present disclosure relates to a magnetic tunnel junction (MTJ) device and its fabricating method. Through forming MTJ through a damascene process, device damage due to the etching process and may be avoided. In some embodiments, a spacer is formed between a first portion and a second portion of the MTJ to prevent the tunnel insulating layer of the MTJ from being damaged in subsequent processes, greatly increasing product yield thereby. In other embodiments, signal quality may be improved and magnetic flux leakage may be reduced through the improved cup-shaped MTJ structure of this invention.

Abstract: A magnetic head according to an embodiment includes a first magnetic shield and a second magnetic shield that are opposed to each other, and a magnetoresistive film arranged between the first magnetic shield and the second magnetic shield, and including a first magnetic layer including a first metal layer that contains 90 at. % or more of Fe and a first Heusler alloy layer, a second magnetic layer arranged on a side of the first Heusler alloy layer opposite from the first magnetic layer, and an intermediate layer arranged between the first Heusler alloy layer and the second magnetic layer.

Abstract: A microwave assisted magnetic recording write head having a spin torque oscillator capable of producing high strength high frequency magnetic oscillations with reduced applied current. The spin torque oscillator uses a magnetic field generation layer with a high moment material including such as Fe and Co that is formed on an interlayer having a face centered cubic (fcc) crystal structure, that functions as an under-layer. The high moment magnetic field generation layer has also reduced magnetic damping.

Abstract: A thin film magnetic head includes a magnetoresistive effect (MR) laminated body that has the following structure: first and second magnetic layers in which the magnetization direction of at least one of the magnetic layers changes according to an external magnetic field; the first magnetic layer is provided at a lower side of a laminated direction; the second magnetic layer is provided at an upper side of the laminated direction; a non-magnetic intermediate layer made of ZnO sandwiched between the first and the second magnetic layers; a first intermediate interface layer is provided at the interface between the first magnetic layer and the non-magnetic intermediate layer; and a second intermediate interface layer is provided at the interface between the non-magnetic intermediate layer and the second magnetic layer. At least the first intermediate interface layer contains Ag and Zn, or Au and Zn.

Abstract: A magnetic detection element includes a magnetoresistance effect portion composed of a magnetoresistance effect material and a pair of yoke portions. The pair of yoke portions is composed of a soft magnetic material and are respectively arranged so as to be electrically connected to both sides of the magnetoresistance effect portion. The pair of yoke portions guides magnetic flux into the magnetoresistance effect portion. The magnetic detection element also includes a bypass portion, which is composed of a soft magnetic material and is saturated with magnetic flux at lower magnetic field intensity than the yoke portions, and which guides a part of the magnetic flux generated in the yoke portions so as to divert the magnetic flux from the magnetoresistance effect portion.

Abstract: In a method for fabricating a semiconductor device, a conductive layer is formed on a substrate, where the substrate has a bottom layer formed thereon. A magnetic tunnel junction layer is formed on the conductive layer. The magnetic tunnel junction layer is patterned using an etching gas containing oxygen. An insulating layer is formed by oxidizing the conductive layer exposed outside the patterned magnetic tunnel junction layer using the etching gas.

Abstract: In certain embodiments, an apparatus includes a top shield, bottom shield, polarizer, nonmagnetic conductor layer, and a sensor stack having a first sensor layer. The sensor stack is positioned at a distance recessed from a first plane. The nonmagnetic conductor layer is positioned between the polarizer and the first sensor layer. A magnetization of the first sensor layer is arranged and configured to move in the same direction as a magnetization of the polarizer.

Abstract: A dual current-perpendicular-to-the-plane magnetoresistive (CPP-MR) sensor has an antiparallel-free (APF) structure as the free layer and uses the top and bottom shields as reference layers. The free layer is an APF structure that has the two free layers (FL1 and FL2) biased into a “spin-flop” state. In this state, the magnetic bias field from side biasing layers is great enough to stabilize the magnetizations of FL1 and FL2 to have a relative orientation preferably about 90 degrees and symmetrically positioned on either side of the magnetic bias field. The side biasing layers may be formed of soft magnetic material to also function as side shields and the top shield may be ferromagnetically coupled to the side shields, with the magnetization of the top shield being opposite that of the magnetization of the bottom shield.