Abstract: A data reader can be configured with at least a magnetically responsive lamination that has a first portion with a first stripe height from an air bearing surface (ABS) and a second portion with a different second stripe height from the ABS. The first portion can be constructed to have a back edge surface shaped at a predetermined angle relative to the ABS by a back edge feature.

Abstract: Various embodiments may be generally directed to a data storage device with at least a magnetic element having a magnetic stack positioned adjacent to and separated from at least one side shield on an air bearing surface (ABS). The side shield can be configured with a predetermined anisotropy variation along a down-track direction.

Abstract: According to one embodiment, a magneto-resistance effect device includes: a multilayer structure having a cap layer; a magnetization pinned layer; a magnetization free layer provided between the cap layer and the magnetization pinned layer; a spacer layer provided between the magnetization pinned layer and the magnetization free layer; a function layer which is provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer, the function layer having oxide containing at least one element selected from Zn, In, Sn and Cd, and at least one element selected from Fe, Co and Ni; and a pair of electrodes for applying a current perpendicularly to a film plane of the multilayer structure.

Abstract: Embodiments relate to xMR sensors, in particular AMR and/or TMR angle sensors with an angle range of 360 degrees. In embodiments, AMR angle sensors with a range of 360 degrees combine conventional, highly accurate AMR angle structures with structures in which an AMR layer is continuously magnetically biased by an exchange bias coupling effect. The equivalent bias field is lower than the external rotating magnetic field and is applied continuously to separate sensor structures. Thus, in contrast with conventional solutions, no temporary, auxiliary magnetic field need be generated, and embodiments are suitable for magnetic fields up to about 100 mT or more. Additional embodiments relate to combined TMR and AMR structures. In such embodiments, a TMR stack with a free layer functioning as an AMR structure is used. With a single such stack, contacted in different modes, a high-precision angle sensor with 360 degrees of uniqueness can be realized.

Abstract: A spintronic electronic apparatus having a multilayer structure. The apparatus includes a substrate, having disposed in succession upon the substrate; a bottom interface layer; a pinned layer; a tunneling barrier; a free layer; and a top interface layer, wherein the apparatus operates as a non-resonant magnetic tunnel junction in a large amplitude, out-of-plane magnetization precession regime having weakly current dependent, large diode volt-watt sensitivity when external microwave signals that exceed a predetermined threshold current and have a frequency that is lower than a predetermined level excite the magnetization precession.

Abstract: An apparatus can be generally directed to a magnetic stack having a magnetically free layer positioned on an air bearing surface (ABS). The magnetically free layer can be biased to a predetermined magnetization in various embodiments by a biasing structure that is coupled with the magnetically free layer and positioned distal the ABS.

Abstract: A method to measure a magnetic field is provided. The method includes applying an alternating drive current to a drive strap overlaying a magnetoresistive sensor to shift an operating point of the magnetoresistive sensor to a low noise region. An alternating magnetic drive field is generated in the magnetoresistive sensor by the alternating drive current. When the magnetic field to be measured is superimposed on the alternating magnetic drive field in the magnetoresistive sensor, the method further comprises extracting a second harmonic component of an output of the magnetoresistive sensor. The magnetic field to be measured is proportional to a signed amplitude of the extracted second harmonic component.

Abstract: A write head for a magnetic storage device includes a writing tip comprising a magnetic material, a write pulse generator configured to generate a write pulse signal comprising a varying voltage bias between the magnetic storage device and the writing tip. The write pulse signal comprising one or more write pulses effective to tunnel electrons from the writing tip to the magnetic storage device. The data stream generator configured to provide a data stream signal to the writing tip where the data stream signal is operative to vary spin polarity in the electrons from a first polarity to a second polarity.

Abstract: According to one embodiment, a magneto-resistance effect element includes: a first electrode; a second electrode; a first magnetic layer provided between the first and the second electrodes; a second magnetic layer provided between the first magnetic layer and the second electrode; and an oxide layer of a metal oxide provided between the first magnetic layer and the second magnetic layer. The oxide layer includes wustite crystal grains of a wustite structure with a (1 1 1) plane orientation containing iron. A lattice spacing of a (1 1 1) plane of the wustite crystal grains is not less than 0.253 nanometers and not more than 0.275 nanometers.

Abstract: The present invention is directed to align crystal c-axes in magnetic layers near two opposed junction wall faces of a magnetoresistive element so as to be almost perpendicular to the junction wall faces. A magnetic sensor stack body has, on a substrate, a magnetoresistive element whose electric resistance fluctuates when a bias magnetic field is applied and, on sides of opposed junction wall faces of the magnetoresistive element, field regions including magnetic layers for applying the bias magnetic field to the element. The magnetoresistive element has at least a ferromagnetic stack on a part of an antiferromagnetic layer, and width of an uppermost face of the ferromagnetic stack along a direction in which the junction wall faces are opposed to each other is smaller than width of an uppermost face of the antiferromagnetic layer in the same direction.

Abstract: In one embodiment, a magnetic element for a semiconductor device includes a reference layer, a free layer, and a nonmagnetic spacer layer disposed between the reference layer and the free layer. The nonmagnetic spacer layer includes a binary, ternary, or multi-nary alloy oxide material. The binary, ternary, or multi-nary alloy oxide material includes MgO having one or more additional elements selected from the group consisting of: Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh.

Abstract: A transducer according to one embodiment comprises a first ferromagnetic layer; a second ferromagnetic layer; and an electrically conductive layer positioned between the ferromagnetic layers; wherein a length of the first ferromagnetic layer in a first direction parallel to a plane of deposition thereof is greater than a length of the electrically conductive layer in the first direction such that a first end of the first ferromagnetic layer extends beyond an end of the electrically conductive layer in the first direction, wherein an electrical current enters or exits the end of the first ferromagnetic layer that extends beyond the end of the electrically conductive layer in the first direction. Additional transducer structures, and systems implementing such transducers, are also disclosed.

Abstract: A magnetic element is generally provided that can be implemented as a transducing head. Various embodiments may configure a magnetic stack having a magnetically free layer with a predetermined magnetization. A side shield lamination can be separated from the magnetic stack on an air hearing surface (ABS) and biased to a bias magnetization that opposes the predetermined magnetization.

Abstract: A mixed anisotropy magnetic field sensor includes a first magnetic material film having in-plane anisotropy with a first magnetic easy axis that is in-plane, a second magnetic material film having out-of-plane anisotropy with a second magnetic easy axis that is perpendicular to the first magnetic easy axis of the first magnetic material film, and a non-magnetic spacer between the first magnetic material film and the second magnetic material film. The first magnetic material film has a magnetization oriented in a first magnetization orientation parallel to the first magnetic easy axis in the presence of no applied magnetic field, and the second magnetic material film has a magnetization oriented in a second magnetization orientation parallel to the second magnetic easy axis in the presence of no applied magnetic field.

Abstract: Read elements and associated methods of fabrication are disclosed. During fabrication of the read element, and more particularly, the fabrication of the hard bias magnets, a non-magnetic sacrificial layer is deposited on top of the hard bias material. When a CMP process is subsequently performed, the sacrificial layer is polished instead of the hard bias material. The thicknesses of the hard bias magnets are not affected by the CMP process, but are rather defined by the deposition process of the hard bias material. As a result, the variations in the CMP process will not negatively affect the magnetic properties of the hard bias magnets so that they are able to provide substantially uniform effective magnetic fields to bias the free layer of the magnetoresistance (MR) sensor of the read element.

Abstract: A method and apparatus for increasing the electrical resistivity and corrosion resistance of the material forming a spacer layer in current-perpendicular-to-the-plane (CPP) giant magnetoresistive (GMR) sensors. The increased resistivity of the spacer layer, and thus, the CPP-GMR sensor permits a larger voltage across the sensor and a higher signal-to-noise ratio. The increased corrosion resistance of the spacer layer minimizes the effects of exposing the spacer layer to corrosive materials during fabrication. For example, adding tin to silver to form a metallic alloy spacer layer increases the corrosion resistance of the spacer layer and the electrical resisitivity of the CPP-GMR sensor relative to a spacer layer consisting solely of silver. The Ag—Sn alloy permits a larger current to flow through the sensor, which increases the signal-to-noise ratio.

Abstract: A GMR sensor stripe provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor stripe free layer is eliminated by a combination of biasing the sensor stripe along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By connecting the stripes in an array and making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.

Abstract: A spin accumulation magnetic sensor having improved signal strength and efficiency. The spin accumulation magnetic sensor has a detector structure and a spin injection structure and has a non-magnetic, electrically conductive layer extending between the spin injection structure and the detector structure. The detector structure has first and second free layers arranged such that the non-magnetic, electrically conductive layer extends between them and so that they are magnetically anti-parallel coupled with one another. The spin injection structure can also include first and second magnetic layers with the electrically conductive layer extending between them and with the first magnetic layer being pinned and the second magnetic layer being anti-parallel coupled with the first magnetic layer.

Abstract: In accordance with an embodiment, a magnetoresistive element includes a lower electrode, a first magnetic layer on the lower electrode, a first diffusion prevention layer on the first magnetic layer, a first interfacial magnetic layer on the first metal layer, a nonmagnetic layer on the first interfacial magnetic layer, a second interfacial magnetic layer on the nonmagnetic layer, a second diffusion prevention layer on the second interfacial magnetic layer, a second magnetic layer on the second diffusion prevention layer, and an upper electrode layer on the second magnetic layer. The ratio of a crystal-oriented part to the other part in the second interfacial magnetic layer is higher than the ratio of a crystal-oriented part to the other part in the first interfacial magnetic layer.

Abstract: A magnetic element is generally provided that can be implemented as a transducing head. Various embodiments may configure a magnetic stack to be separated from a side shield lamination on an air bearing surface (ABS). The side shield lamination can be constructed to have a plurality of magnetic and non-magnetic layers each coupled to a top shield.

Abstract: A mixed anisotropy magnetic field sensor includes a first magnetic material film having in-plane anisotropy with a first magnetic easy axis that is in-plane, a second magnetic material film having out-of-plane anisotropy with a second magnetic easy axis that is perpendicular to the first magnetic easy axis of the first magnetic material film, and a non-magnetic spacer between the first magnetic material film and the second magnetic material film. The first magnetic material film has a magnetization oriented in a first magnetization orientation parallel to the first magnetic easy axis in the presence of no applied magnetic field, and the second magnetic material film has a magnetization oriented in a second magnetization orientation parallel to the second magnetic easy axis in the presence of no applied magnetic field.

Abstract: According to one embodiment, a method of manufacturing a magnetoresistive element includes a layered structure and a pair of electrodes, the layered structure including a cap layer, a magnetization pinned layer, a magnetization free layer, a spacer layer and a functional layer provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer and including an oxide, the method including forming a film including a base material of the functional layer, performing an oxidation treatment on the film using a gas containing oxygen in a form of at least one selected from the group consisting of molecule, ion, plasma and radical, and performing a reduction treatment using a reducing gas on the film after the oxidation treatment.

Abstract: A spin-torque oscillator with antiferromagnetically-coupled free layers has at least one of the free layers with increased magnetic damping. The Gilbert magnetic damping parameter (?) is at least 0.05. The damped free layer may contain as a dopant one or more damping elements selected from the group consisting of Pt, Pd and the 15 lanthanide elements. The free layer damping may also be increased by a damping layer adjacent the free layer. One type of damping layer may be an antiferromagnetic material, like a Mn alloy. As a modification to the antiferromagnetic damping layer, a bilayer damping layer may be formed of the antiferromagnetic layer and a nonmagnetic metal electrically conductive separation layer between the free layer and the antiferromagnetic layer. Another type of damping layer may be one formed of one or more of the elements selected from Pt, Pd and the lanthanides.

Abstract: A magnetoresistive read sensor with improved sensitivity and stability is described. The sensor is a trilayer stack positioned between two electrodes. The trilayer stack has two free layers separated by a nonmagnetic layer and a biasing magnet positioned at the rear of the stack and separated from the air bearing surface. Current in the sensor is confined to regions close to the air bearing surface by an insulator layer to enhance reader sensitivity.

Abstract: A demodulator of an FM signal modulated about a carrier frequency with a modulation frequency has an RF oscillator configured to be synchronized, under identical conditions of operation, with oscillations at first and second frequencies used in the FM signal to encode respective pieces of information. The oscillator has a magnetoresistive device; and a low-pass filter connected to an output electrode of the magnetoresistive device to filter an oscillating signal, generated by the oscillator and to a rendering terminal to provide, as a demodulated electrical signal, the filtered signal, the cut-off frequency fc at ?3 dB of this filter being strictly lower than the frequency and higher than the modulation frequency.

Abstract: A memory element includes a layered structure and a negative thermal expansion material layer. The layered structure includes a memory layer, a magnetization-fixed layer, and an intermediate layer. The memory layer has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a magnetic layer having a positive magnetostriction constant. The magnetization direction is changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer. The magnetization-fixed layer has magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer. The intermediate layer is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.

Abstract: The present invention generally relates to fabricating a bond pad for electrically connecting a laser diode to a slider and a TAR head in a HDD. The bond pad is deposited on a surface of the head that is perpendicular to the air bearing surface (ABS). The head is diced and lapped to expose the bond pad on a top surface of the head and mounted on a slider. The laser diode and a sub-mount may be coupled to the top surface of the slider—i.e., the surface opposite the ABS—by connecting to the bond pads. Specifically, both the laser diode and the sub-mount have electrodes thereon that are perpendicular to the bond pads. Conductive bonding material is used to bond the laser diode and the sub-mount to the bond pads.

Abstract: According to one embodiment, there is provided a magnetic head for a three-dimensional magnetic recording/reproducing apparatus, the head executing reading from or writing to a recording medium, utilizing a magnetic resonance, the medium including stacked layers formed of magnetic substances having different resonance frequencies, the head comprising a spin torque oscillation unit and auxiliary magnetic poles. The unit is operable to simultaneously oscillate at a plurality of frequencies to cause the magnetic resonance, when reading or writing. The magnetic poles assist the unit, when reading or writing. Further, according to another embodiment, there is provided a recording magnetic head using a high-frequency assist method and comprising a microwave magnetic field applying unit and a recording magnetic pole. The unit executes writing to a recording medium, and is formed of a plurality of spin torque oscillation elements having phases thereof synchronized. The magnetic pole assists the writing.

Abstract: According to one embodiment, a magneto-resistance effect device includes: a multilayer structure having a cap layer; a magnetization pinned layer; a magnetization free layer provided between the cap layer and the magnetization pinned layer; a spacer layer provided between the magnetization pinned layer and the magnetization free layer; a function layer which is provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer, the function layer having oxide containing at least one element selected from Zn, In, Sn and Cd, and at least one element selected from Fe, Co and Ni; and a pair of electrodes for applying a current perpendicularly to a film plane of the multilayer structure.

Abstract: A tool for testing a magnetic disk for use in a magnetic disk drive. The tool detects surface defects or asperities by detecting a change in electrical resistance corresponding to a temperature change in a thermally sensitive layer. The apparatus includes a slider body having a thermally insulating layer formed on an air bearing surface of the slider body and a thermal sensor layer formed on the thermally insulating layer. The thermally insulating layer prevents thermal heat spikes in the thermal sensor layer (such as resulting from contact with an asperity) from dissipating quickly into the slider body itself. The thermal sensor layer is a material that exhibits a change in electrical resistance in response to a change in temperature and is preferably a PTC thermistor material which exhibits a large change in electrical resistance when a transition temperature has been reached.

Abstract: In certain embodiments, a magnetic had includes a top shield and a bottom shield positioned at an air bearing surface. A polarizer and a nonmagnetic layer are positioned between the top and bottom shields. An analyzer is positioned adjacent the nonmagnetic layer at a distance recessed from the air bearing surface. Current travels through the top shield, polarizer, nonmagnetic layer, and first analyzer.

Abstract: A method for making a current-perpendicular-to the-plane giant magnetoresistance (CPP-GMR) sensor with a Heusler alloy pinned layer on the sensor's Mn-containing antiferromagnetic pinning layer uses two annealing steps. A layer of a crystalline non-Heusler alloy ferromagnetic material, like Co or CoFe, is deposited on the antiferromagnetic pinning layer and a layer of an amorphous X-containing ferromagnetic alloy, like a CoFeBTa layer, is deposited on the Co or CoFe crystalline layer. After a first in-situ annealing of the amorphous X-containing ferromagnetic alloy, the Heusler alloy pinned layer is deposited on the amorphous X-containing ferromagnetic layer and a second high-temperature annealing step is performed to improve the microstructure of the Heusler alloy pinned layer.

Abstract: Multi-period structures exhibiting giant magnetoresistance (GMR) are described in which the exchange coupling across the active interfaces of the structure is ferromagnetic.

Abstract: A synthesizer includes a second frequency-synthesizing stage comprising a radiofrequency oscillator configured to oscillate at a frequency ?fo when it is synchronized with a signal s0(t), where ? is a rational number different from one such that ?f0=ft. The radiofrequency oscillator has a magnetoresistive device within which there flows a spin-polarized electrical current to generate a signal st(t) oscillating at the frequency ft on an output electrode connected to the rendering terminal. This device is formed by a stack of magnetic and non-magnetic layers, a synchronization terminal for synchronizing the frequency of the oscillating signal st(t) with the frequency of the signal received at the synchronization terminal. The synchronization terminal being connected to the output terminal of the first stage to receive the signal s0(t).

Abstract: A magneto-resistive effect (MR) element includes first and second magnetic layers in which a relative angle formed by magnetization directions changes responsive to an external magnetic field, and a spacer layer positioned between the first and second magnetic layers. The first magnetic layer is positioned closer to a substrate above which the MR element is formed than the second magnetic layer. The spacer layer includes copper and metal intermediate layers and a main spacer layer composed primarily of gallium oxide. The copper and metal intermediate layers are positioned between the main spacer and first magnetic layers. The metal intermediate layer is positioned between the copper and main spacer layers. The metal intermediate layer is composed primarily of at least one from a group of one of magnesium and at least partially oxidized magnesium, and one of aluminum and at least partially oxidized aluminum.

Abstract: A magnetic sensor includes a magnetic layer comprising magnetic material and a grain refining agent. The magnetic layer having a grain-refined magnetic layer surface. A layer adjacent the magnetic layer has a layer surface that conforms to the grain-refined magnetic layer surface.

Abstract: A microwave-assisted magnetic recording head includes: a main magnetic pole that generates a recording magnetic field to be recorded on a magnetic recording medium; a shield; and an oscillator that is provided between the main magnetic pole and the shield and generates a microwave magnetic field. The microwave-assisted magnetic recording head is provided with a thermal expansion device for adjusting a relative position between the oscillator and the main magnetic pole so as to be able to independently adjust a recording magnetic field from the main magnetic pole and a microwave magnetic field from the oscillator.

Abstract: A current-perpendicular-to-the-plane magnetoresistive sensor has magnetic damping material located adjacent either or both of the sensor side edges and back edge to reduce the effect of spin transfer torque. The damping material may be Pt, Pd, Os, or a rare earth metal from the 15 lanthanoid elements. The damping material may be an ultrathin layer in contact with the sensor edges. An insulating layer is deposited on the damping layer and isolates the sensor's ferromagnetic biasing layer from the damping layer. Instead of being a separate layer, the damping material may be formed adjacent the sensor edges by being incorporated into the material of the insulating layer.

Abstract: A method for manipulating domain pinning and reversal in a ferromagnetic material comprises applying an external magnetic field to a uniaxial ferromagnetic material comprising a plurality of magnetic domains, where each domain has an easy axis oriented along a predetermined direction. The external magnetic field is applied transverse to the predetermined direction and at a predetermined temperature. The strength of the magnetic field is varied at the predetermined temperature, thereby isothermally regulating pinning of the domains. A magnetic storage device for controlling domain dynamics includes a magnetic hard disk comprising a uniaxial ferromagnetic material, a magnetic recording head including a first magnet, and a second magnet. The ferromagnetic material includes a plurality of magnetic domains each having an easy axis oriented along a predetermined direction.

Abstract: According to one embodiment, a magneto-resistance effect element includes: a first electrode; a second electrode; a first magnetic layer provided between the first and the second electrodes; a second magnetic layer provided between the first magnetic layer and the second electrode; and an oxide layer of a metal oxide provided between the first magnetic layer and the second magnetic layer. The oxide layer includes wustite crystal grains of a wustite structure with a (1 1 1) plane orientation containing iron. A lattice spacing of a (1 1 1) plane of the wustite crystal grains is not less than 0.253 nanometers and not more than 0.275 nanometers.

Abstract: A magnetic device is provided in one example that comprises a free layer having a magnetic anisotropy. The magnetic anisotropy is at least partially non-uniform. The magnetic device further comprises an antiferromagnetic layer adjacent to and weakly exchange coupled with the free layer, wherein the weak exchange coupling reduces the non-uniformity of the magnetic anisotropy of the free layer.

Abstract: A magnetic storage device stable in write characteristic is provided. A first nonmagnetic film is provided over a recording layer. A first ferromagnetic film is provided over the first nonmagnetic film and has a first magnetization and a first film thickness. A second nonmagnetic film is provided over the first ferromagnetic film. A second ferromagnetic film is provided over the second nonmagnetic film, is coupled in antiparallel with the first ferromagnetic film, and has a second magnetization and a second film thickness. An antiferromagnetic film is provided over the second ferromagnetic film. The sum of the product of the first magnetization and the first film thickness and the product of the second magnetization and the second film thickness is smaller than the product of the magnetization of the recording layer and the film thickness of the recording layer.

Abstract: A memory includes a semiconductor substrate. Magnetic tunnel junction elements are provided above the semiconductor substrate. Each of the magnetic tunnel junction elements stores data by a change in a resistance state, and the data is rewritable by a current. Cell transistors are provided on the semiconductor substrate. Each of the cell transistors is in a conductive state when the current is applied to the corresponding magnetic tunnel junction element. Gate electrodes are included in the respective cell transistors. Each of the gate electrodes controls the conductive state of the corresponding cell transistor. In active areas, the cell transistors are provided, and the active areas extend in an extending direction of intersecting the gate electrodes at an angle of (90-a tan(?)) degrees.

Abstract: A method for forming a magnetic tunnel junction cell includes forming a pinning layer, a pinned layer, a dielectric layer and a free layer over a first electrode, forming a second electrode on the free layer, etching the free layer and the dielectric layer using the second electrode as an etch barrier to form a first pattern, forming a prevention layer on a sidewall of the first pattern, and etching the pinned layer and the pinning layer using the second electrode and the prevention layer as an etch barrier to form a second pattern.

Abstract: A spin wave device comprises a metal layer, a pinned layer, a nonmagnetic layer, a free layer, an antiferromagnetic layer, a first electrode, a first insulator layer, and a second electrode. The pinned layer has a magnetization whose direction is fixed. The free layer has a magnetization whose direction is variable.

Abstract: The invention provides a giant magneto-resistive effect device of the CPP (current perpendicular to plane) structure (CPP-GMR device) comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked together with said spacer layer sandwiched between them, with a sense current passed in the stacking direction, wherein the first ferromagnetic layer and the second ferromagnetic layer function such that the angle made between the directions of magnetizations of both layers change relatively depending on an external magnetic field, said spacer layer contains a semiconductor oxide layer, and a nitrogen element-interface protective layer is provided at a position where the semiconductor oxide layer forming the whole or a part of said spacer layer contacts an insulating layer.

Abstract: A giant magneto-resistive effect device (CPP-GMR device) having the CPP (current perpendicular to plane) structure comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor oxide layer interposed between the first nonmagnetic metal layer and the second nonmagnetic metal layer, the semiconductor oxide layer that forms a part of the spacer layer contains zinc oxide as its main component wherein the main component zinc oxide contains an additive metal, and the additive metal is less likely to be oxidized than zinc.

Abstract: A protecting coating for a copper substrate is disclosed. The coating comprises seed layer comprising titanium ions that forms an “alloy-like” structure with the copper substrate. The coating further comprises a first layer of carbon disposed on the seed layer comprising titanium ions. A second layer comprising titanium is disposed on the first layer of carbon, and a second layer of carbon is disposed on the second layer comprising titanium.

Abstract: A spin torque oscillator device having a magnetic free layer with a magnetic anisotropy that has a component that is oriented perpendicular to a direction of an applied magnetic field. The spin torque oscillator device includes a magnetic reference layer, a magnetic free layer and a non-magnetic layer sandwiched there-between. A component of the magnetic anisotropy of the free layer can be oriented perpendicular to a magnetization of the reference layer, and this orientation relative to the magnetization of the reference layer can be either in lieu of or in addition to its orientation relative to the applied magnetic field. The magnetic anisotropy cants the magnetization of the free layer which would otherwise be oriented antiparallel with the magnetization of the reference layer. The magnetic anisotropy in the free layer improves performance of the spin torque sensor by reducing noise.

Abstract: A method for driving a spin valve element, including passing driving current through the spin valve element to generate an oscillation signal, and performing amplitude modulation of the driving current at a frequency lower than the oscillation frequency of oscillation signals. This amplitude modulation can be ON-OFF modulation, and the interval ton in the conducting state of the ON-OFF modulation is made to satisfy the relation ton<D2/?, where ? is the thermal diffusivity of the heat diffusion portion, and D is the thickness of the heat diffusion portion.