Abstract: A magnetic field-assisted magnetic recording (MAMR) head is provided, which includes a recording main pole and a texture control layer (TCL), a seed control layer, and a spin torque oscillator (STO) positioned over the main pole, in this order, in a stacking direction from a leading side to a trailing side of the recording head. The STO has a crystallographic preferred growth orientation and includes a spin polarized layer (SPL). The TCL may include a Cu layer.

Abstract: A non-contact current sensor includes a spin valve structure (2), an electrical unit (4) that applies a varying current to the spin valve structure (2), and a resistance reading unit that electrically reads out a resistance value of the spin valve structure (2). When a current-induced magnetic field is detected, a coercive force of a free layer (14) is configured to be larger than the current-induced magnetic field as a detection target, and the electrical unit (4) allows the magnetization directions of a pinned layer (12) and the free layer (14) to transition between a mutually parallel state and a mutually anti-parallel state by applying the current to the spin valve structure (2). The resistance reading unit (5) detects a threshold value corresponding to the transition.

Abstract: A data reader may have a magnetoresistive stack consisting of at least magnetically free and magnetically fixed structures with the magnetically fixed structure set to a first magnetization direction by a pinning structure separated from an air bearing surface by a front shield portion of a magnetic shield. The pinning structure can meet the front shield portion with a planar sidewall angled at 10° or less with respect to the ABS.

Abstract: A read sensor and fabrication method thereof. The method includes forming a bottom stack that includes an antiferromagnetic (AFM) layer, a lower ferromagnetic stitch layer above the AFM layer and a sacrificial cap layer on the lower ferromagnetic stitch layer. The sacrificial cap layer is formed of a material that alloys magnetically with the lower ferromagnetic stitch layer. The method further includes substantially removing the sacrificial cap layer. After substantially removing the sacrificial layer, an upper ferromagnetic stitch layer is deposited on the lower ferromagnetic stitch layer of the bottom stack to form a stitch interface that provides relatively strong magnetic coupling between the lower ferromagnetic stitch layer of the bottom stack and the upper ferromagnetic stitch layer.

Abstract: A magnetic memory device includes a first magnetic structure on a substrate, a second magnetic structure between the substrate and the first magnetic structure, and a tunnel barrier between the first and second magnetic structures. At least one of the first and second magnetic structures includes a perpendicular magnetic layer on the tunnel barrier, and a polarization enhancement layer interposed between the tunnel barrier and the perpendicular magnetic layer. Here, the polarization enhancement layer contains cobalt, iron, and at least one of the elements of Group IV, and the polarization enhancement layer has a magnetization direction perpendicular to or substantially perpendicular to a top surface of the substrate.

Abstract: Embodiments of the inventive concepts provide magnetic memory devices. The magnetic memory device includes a magnetic tunnel junction including a free layer, a pinned layer, and a tunnel barrier layer between the free layer and the pinned layer. The free layer includes a perpendicular magnetic material doped with non-magnetic impurities.

Abstract: A spin valve magnetoresistance element has an even number of free layer structures for which half has an antiferromagnetic coupling and the other half has a ferromagnetic coupling with respect to associated pinned layers. The different couplings are the result of an even number different spacer layers having respective different thicknesses.

Abstract: A magnetoresistance element can have a substrate; a ferromagnetic seed layer consisting of a binary alloy of NiFe; and a first nonmagnetic spacer layer disposed under and directly adjacent to the ferromagnetic seed layer and proximate to the substrate, wherein the first nonmagnetic spacer layer is comprised of Ta or Ru. A method fabricating of fabricating a magnetoresistance element can include depositing a seed layer structure over a semiconductor substrate, wherein the depositing the seed layer structure includes depositing at least a ferromagnetic seed layer over the substrate. The method further can further include depositing a free layer structure over the seed layer structure, wherein the depositing the ferromagnetic seed layer comprises depositing the ferromagnetic seed layer in the presence of a motion along a predetermined direction and in the presence of a predetermined magnetic field having the same predetermined direction.

Abstract: A MR sensor is disclosed with an antiferromagnetic (AFM) layer recessed behind a bottom shield to reduce reader shield spacing and improve pin related noise. Above the AFM layer is an AP2/AFM coupling layer/AP1 stack that extends from an air bearing surface to the MR sensor backside. The AP2 layer is pinned by the AFM layer, and the AP1 layer serves as a reference layer to an overlying free layer during a read operation. The AP1 and AP2 layers have improved resistance to magnetization flipping because back portions thereof have a full cross-track width “w” between MR sensor sides thereby enabling greater pinning strength from the AFM layer. Front portions of the AP1/AP2 layers lie under the free layer and have a track width less than “w”. The bottom shield may have an anti-ferromagnetic coupling structure. A process flow is provided for fabricating the MR sensor.

Abstract: An apparatus according to one embodiment includes a transducer structure having: a lower shield, an upper shield above the lower shield, a current-perpendicular-to-plane sensor between the upper and lower shields, and an insulating layer between the at least one lead and the shield closest thereto. At least one lead is selected from a group including: an upper electrical lead between the sensor and the upper shield and a lower electrical lead between the sensor and the lower shield. The at least one lead is in electrical communication with the sensor. A width of one or more of the at least one lead in a cross track direction is about equal to a width of the sensor.

Abstract: A magnetic head according to an embodiment includes: a spin valve element with three terminals including a nonmagnetic base layer, a first terminal including a first magnetic layer, a second terminal including a second magnetic layer, and a third terminal including a third magnetic layer; and a slider including a first external lead terminal connecting to the first terminal, a second external lead terminal connecting to the second terminal, and a third external lead terminal connecting to the third terminal, in an operation, a first current being caused to flow from the second external lead terminal to the third terminal via the second terminal and the nonmagnetic base layer, and a second current that is lower than the first current being caused to flow to the first terminal.

Abstract: Provided is a magnetic memory device for applying an in-plane current to a conductive wire adjacent to a free magnetic layer having an in-plane magnetic anisotropy to induce a flux reversal of the free magnetic layer and simultaneously applying a voltage to each magnetic tunnel junction cell selectively to reverse magnetization of the free magnetic layer selectively at each specific voltage. The magnetic memory device may implement high density integration by reducing a volume since a spin-hall spin-torque causing a flux reversal is generated at an interface of the conductive wire and the free magnetic layer, ensure thermal stability by enhancing perpendicular magnetic anisotropy of the magnetic layer, and reduce a critical current density by increasing an amount of spin current. In addition, by increasing tunnel magnetic resistance with a thick insulating body, the magnetic memory device may increase a reading rate without badly affecting the critical current density.

Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer including O and one of Co, Fe, Ni and Mn, a second magnetic layer, a nonmagnetic layer between the first and second magnetic layers, a first electrode connected to the first magnetic layer, a second electrode connected to the second magnetic layer, and a resistive layer including N between the first magnetic layer and the first electrode.

Abstract: A magnetic element is provided. The magnetic element includes a free magnetization layer having a surface area that is approximately 1,600 nm2 or less, the free magnetization layer including a magnetization state that is configured to be changed; an insulation layer coupled to the free magnetization layer, the insulation layer including a non-magnetic material; and a magnetization fixing layer coupled to the insulation layer opposite the free magnetization layer, the magnetization fixing layer including a fixed magnetization so as to be capable of serving as a reference of the free magnetization layer.

Abstract: A read head is longitudinally biased unidirectionally by laterally abutting soft magnetic layers or multilayers. The soft magnetic layers are themselves magnetically stabilized by layers of antiferromagnetic material that are exchange coupled to them. The same layers of antiferromagnetic materials can be used to stabilize a unidirectional anisotropy of an overhead shield by means of exchange coupling. By including the antiferromagnetic material layer within the patterned biasing structure itself, an additional layer of antiferromagnetic material that normally covers the entire sensor structure is eliminated. The elimination of an entire layer is also advantageous for reducing the inter-sensor spacing in a TDMR (two dimensional magnetic recording) configuration where two sensor are vertically stacked on top of each other.

Abstract: Perpendicular magnetic tunnel junction (pMTJ) devices employing a pinned layer stack with a thin top anti-parallel (AP2) layer and having a transitioning layer providing a transitioning start to a body-centered cubic (BCC) crystalline/amorphous structure below the top anti-parallel (AP2) layer, to promote a high tunnel magnetoresistance ratio (TMR) with reduced pinned layer thickness are disclosed. A first anti-parallel (AP) ferromagnetic (AP1) layer in a pinned layer has a face-centered cubic (FCC) or hexagonal closed packed (HCP) crystalline structure. A transitioning material (e.g., Iron (Fe)) is provided in a transitioning layer between the AP1 layer and an AFC layer (e.g., Chromium (Cr)) that starts a transition from a FCC or HCP crystalline structure, to a BCC crystalline/amorphous structure.

Abstract: A multi-sensor reader that includes a first sensor that has a first sensor stack, which includes a sensing layer that has a magnetization that changes according to an external magnetic field. The first sensor also includes a first seed element below the first sensor stack. The multi-sensor reader also includes a second sensor stacked over the first sensor. The second sensor includes a second sensor stack, which includes a sensing layer that has a magnetization that changes according to the external magnetic field. The second sensor also includes a second seed element below the second sensor stack. The second seed element is structurally different from the first seed element and includes a stabilization feature.

Abstract: Some embodiments include a magnetic tunnel junction comprising magnetic reference material having an iridium-containing region between a multi-layer stack and a polarizer region. Some embodiments include a magnetic tunnel junction having a conductive first magnetic electrode which contains magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and which contains magnetic reference material, and a non-magnetic insulator material between the first and second electrodes. The magnetic reference material of the second electrode includes a first region containing a stack of cobalt alternating with one or more of platinum, palladium and nickel; includes an iridium-containing second region over the first region; and includes a cobalt-containing third region over the second region. The third region is directly against the non-magnetic insulator material.

Abstract: A magneto-resistive effect element has a first shield layer, a second layer, and a multilayer film that is positioned between the first shield layer and the second shield layer. The multilayer film has a free layer, a first pinned layer, a nonmagnetic spacer layer, a second pinned layer that fixes a magnetization direction of the first pinned layer, and an antiferromagnetic layer that is exchange-coupled with the second pinned layer. The antiferromagnetic layer is positioned away from an air bearing surface (ABS).

Abstract: A TMR sensor with a free layer having a FL1/FL2/FL3 configuration is disclosed in which FL1 is FeCo or a FeCo alloy with a thickness between 2 and 15 Angstroms. The FL2 layer is made of CoFeB or a CoFeB alloy having a thickness from 2 to 10 Angstroms. The FL3 layer is from 10 to 100 Angstroms thick and has a negative ? to offset the positive ? from FL1 and FL2 layers and is comprised of CoB or a CoBQ alloy where Q is one of Ni, Mn, Tb, W, Hf, Zr, Nb, and Si. Alternatively, the FL3 layer may be a composite such as CoB/CoFe, (CoB/CoFe)n where n is ?2 or (CoB/CoFe)m/CoB where m is ?1. The free layer described herein affords a high TMR ratio above 60% while achieving low values for ? (<5×10?6), RA (1.5 ohm/?m2), and Hc (<6 Oe).

Abstract: According to one embodiment, a magnetic sensor includes a lower scissor free layer, and an upper scissor free layer above the lower scissor free layer in a track direction, where at least one of the scissor free layers has a generally T-shaped periphery. According to another embodiment, a method includes forming a lower scissor free layer, and forming an upper scissor free layer above the lower scissor free layer in a track direction, where at least one of the one of the scissor free layers has a generally T-shaped periphery.

Abstract: A current sensor includes: four magnetic sensor elements arranged within a plane orthogonal to a measured current, having a symmetrical magnetic characteristics curve, and adapted to convert a magnitude of a magnetic field into an electrical signal and output the electrical signal; a bridge circuit including the four magnetic sensor elements; and a bias magnetic field application member adapted to applying a bias magnetic field to the magnetic sensor elements.

Abstract: A magnetoresistive memory array including a plurality of magnetoresistive memory elements wherein each magnetoresistive memory element comprises a free layer including at least one ferromagnetic layer having perpendicular magnetic anisotropy, a fixed layer, and a tunnel barrier, disposed between and in contact with the free and fixed layers. The tunnel barrier includes a first metal-oxide layer, having a thickness between 1 and 10 Angstroms, a second metal-oxide layer, having a thickness between 3 and 6 Angstroms, disposed on the first metal-oxide layer, and a third metal-oxide layer, having a thickness between 3 and 6 Angstroms, disposed over the second metal-oxide layer. In one embodiment, the third metal-oxide layer is in contact with the free layer or fixed layer. The tunnel barrier may also include a fourth metal-oxide layer, having a thickness between 1 and 10 Angstroms, disposed between the second and third metal-oxide layers.

Abstract: A magnetic oscillator for use in Microwave Assisted Magnetic Recording (MAMR). The magnetic oscillator can be a spin torque oscillator and includes a magnetic spin polarization layer, a magnetic field generation layer and a non-magnetic intermediate layer sandwiched between the magnetic spin polarization layer and the magnetic field generation layer. The non-magnetic intermediate layer is constructed of a material that provides improved performance, increased lifespan and thermal robustness. The magnetic intermediate layer is constructed of an alloy of Ag and an element X. More preferably the element X can be Sn or Zn.

Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer having a variable magnetization direction; a second magnetic layer having an invariable magnetization direction; and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer and including an MgFeO film, wherein the MgFeO film contains at least one element selected from a group consisting of Ti, V, Mn, and Cu.

Abstract: A data storage device may be configured at least with a magnetic stack that contacts a magnetic shield. The magnetic stack can be disposed between first and second side shields and having at least one layer constructed of a CoFeNiB material. The magnetic shield may have a synthetic antiferromagnet with a non-magnetic layer disposed between first and second ferromagnetic layers.

Abstract: A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.

Abstract: According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W.

Abstract: One embodiment of a magnetoresistive element comprises: a free ferromagnetic layer comprising a reversible magnetization direction directed substantially perpendicular to a film surface in its equilibrium state; a pinned ferromagnetic layer comprising a fixed magnetization direction directed substantially perpendicular to the film surface; a nonmagnetic tunnel barrier layer disposed between the free ferromagnetic layer and the pinned ferromagnetic layer and having a direct contact with the free and pinned ferromagnetic layers; a first nonmagnetic conductive layer disposed adjacent to and having a direct contact with a side of a free ferromagnetic layer opposite to the tunnel barrier layer; and a second nonmagnetic conductive layer disposed adjacent to a side of the pinned ferromagnetic layer opposite to the tunnel barrier layer, wherein the free ferromagnetic layer and the pinned ferromagnetic layers comprise at least one element selected from the group consisting of Fe, Co, and Ni, at least one element selec

Abstract: A hard-disk drive having a structurally efficient magnetic head slider utilizes a MAMR-based spin torque oscillator (STO) for head-disk contact detection and for flying height sensing. Contact detection and spacing estimation techniques consider the nominal temperature difference, and thus different criteria, between read and write operations.

Abstract: There is provided a storage element including a layered construction including a storage layer that has magnetization perpendicular to a surface of the storage layer and whose direction of magnetization is changed corresponding to information, a pinned magnetization layer that has magnetization perpendicular to a surface of the pinned magnetization layer and serves as a standard for information stored in the storage layer, and an insulating layer that is composed of a non-magnetic material and is provided between the storage layer and the pinned magnetization layer.

Abstract: MRAM element having a magnetic tunnel junction including a reference layer, a storage layer, a tunnel barrier layer between the reference and storage layers, and a storage antiferromagnetic layer. The storage antiferromagnetic layer has a first function of exchange-coupling a storage magnetization of the storage layer and a second function of heating the magnetic tunnel junction when a heating current in passed in the magnetic tunnel junction. The MRAM element has better data retention and low writing temperature.

Abstract: A magnetic recording head for microwave-assisted magnetic recording is disclosed. In one embodiment, a magnetic recording head is for applying a magnetic field from a main pole of said magnetic recording head for recording data to a disk. Further comprising a spin torque oscillator adjacent to said magnetic recording head and is for generating a high-frequency magnetic field at a stable frequency and amplitude. Further comprising a capacitor connected to an upper electrode of said spin torque oscillator via a first resistor and a lower electrode of said spin torque oscillator via a second resistor.

Abstract: A magnetic stack is disclosed. The magnetic stack includes a magnetically responsive lamination that includes a ferromagnetic free layer, a synthetic antiferromagnetic (SAF) structure, and a spacer layer positioned between the ferromagnetic free layer and the SAF structure. The magnetically responsive lamination is separated from a sensed data bit stored in an adjacent medium by an air bearing surface (ABS). The stack also includes a first antiferromagnetic (AFM) structure coupled to the SAF structure a predetermined offset distance from the ABS, and a second AFM structure that is separated from the first AFM structure by a first shield layer.

Abstract: In one aspect, the present inventions are directed to a magnetoresistive structure having a tunnel junction, and a process for manufacturing such a structure. The tunnel barrier may be formed between a free layer and a fixed layer in a plurality of repeating process of depositing a metal material and oxidizing at least a portion of the metal material. Where the tunnel barrier is formed by deposition of at least three metal materials interceded by an associated oxidization thereof, the oxidation dose associated with the second metal material may be greater than the oxidation doses associated with the first and third metal materials. In certain embodiments, the fixed layer may include a discontinuous layer of a metal, for example, Ta, in the fixed layer between two layers of a ferromagnetic material.

Abstract: A method for providing a magnetic junction usable in a magnetic device and the magnetic junction are described. The method includes providing a reference layer, a nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer is between the free and reference layers. An interface is between the nonmagnetic spacer and free layers. Providing the free layer further includes applying at least one electric field while the free layer is at a local temperature above an operating temperature of the magnetic junction. The electric field(s) exert a force on an anion in the free layer in a direction away from the interface between the free layer and the nonmagnetic spacer layer. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

Abstract: The blocking temperature of the AFM layer in a TMR sensor has been raised by inserting a magnetic seed layer between the AFM layer and the bottom shield. This gives the device improved thermal stability, including improved SNR and BER.

Abstract: In one embodiment, a magnetic sensor includes: a lower scissor free layer; an upper scissor free layer above the lower scissor free layer; a separation layer between the upper and lower scissor free layers; and upper stabilization layers on opposite sides of the upper scissor free layer in a cross-track direction, where lower surfaces of the upper stabilization layers are above a plane extending along a top surface of the separation layer. In another embodiment, a magnetic sensor includes: a lower scissor free layer; an upper scissor free layer above the lower scissor free layer; a separation layer between the upper and lower scissor free layers; and lower stabilization layers on opposite sides of the lower scissor free layer in a cross-track direction, where upper surfaces of the lower stabilization layers are below a plane extending along a bottom surface of the separation layer.

Abstract: Implementations disclosed herein provide for a magnetoresistive (MR) sensor including a synthetic antiferromagnetic (SAF) structure that is magnetically coupled to a side shield element. The SAF structure includes at least one magnetic amorphous layer that is an alloy of a ferromagnetic material and a refractory material. The amorphous magnetic layer may be in contact with a non-magnetic layer and antiferromagnetically coupled to a layer in contact with an opposite surface of the non-magnetic layer.

Abstract: A magnetic tunnel junction (MTJ) device includes a reference layer having a surface, a tunnel insulating layer formed over the surface of the reference layer, a free layer formed over the tunnel insulating layer, and a magnetic field providing layer formed over the free layer. A magnetization direction in each of the reference layer and the free layer is substantially perpendicular to the surface. The magnetic field providing layer is configured to provide a lateral magnetic field in the free layer, the lateral magnetic field being substantially parallel to the surface.

Abstract: A method for measuring the frequency in a spin torque oscillator having at least a magnetic oscillation layer (MOL), junction layer, and magnetic reference layer (MRL) is disclosed. In a first embodiment, a small in-plane magnetic field is applied to the STO after a DC current is applied to excite the MOL into an oscillation state. The MRL has a perpendicular magnetization that is tilted slightly to give an in-plane magnetization component to serve as a reference layer for measuring the oscillation frequency of the MOL in-plane magnetization component. An AC voltage change is produced in the DC current as a result of variable STO resistance and directly correlates to MOL oscillation frequency. Alternatively, a field having both perpendicular and in-plane components may be applied externally or by forming the STO between two magnetic poles thereby producing an in-plane magnetization reference component in the MRL.

Abstract: According to one embodiment, a magneto-resistive element includes a first ferromagnetic layer formed on a substrate, a tunnel barrier layer formed on the first ferromagnetic layer, and a second ferromagnetic layer containing B formed on the tunnel barrier layer, the second magnetic layer containing therein any of He, Ne, Ar, Kr, Xe and N2.

Abstract: The embodiments of the present invention relate to a method for forming a magnetic read head with pinned layers extending to the ABS of the read head and magnetically coupled with an antiferromagnetic layer that is recessed in relation to the ABS of the read head. Portions of the antiferromagnetic layer and a magnetic layer that are extending to the ABS are removed, exposing a shield. A shielding material is formed on the exposed shield and a seed layer is formed on the shield and on or over a portion of the remaining antiferromagnetic layer. A pinned layer structure is formed on the seed layer and the magnetic layer.

Abstract: A disk drive includes a disk including a magnetizable layer of material, and a transducer. The transducer has a read element that includes a first shield layer, a pinned layer, a metallic spacer, an AP (anti-parallel) free layer, and a second shield layer. The pinned layer has a surface area which is greater than the area of the AP free layer. The read element also includes an anti-ferromagnetic layer for substantially fixing the magnetic orientation of a plurality of domains in the pinned layer. The ferromagnetic layer is adjacent the pinned layer. The pinned layer, and the anti-ferromagnetic layer both have surface areas which are greater than the area associated with the AP free layer. The anti-ferromagnetic layer, in one embodiment, has a pinning strength in the range of 0.5 erg/cm2 to 1.5 erg/cm2.

Abstract: A reader sensor that has a sensor stack with an AFM layer, a pinned stabilization layer, and a pinned layer, with the pinned stabilization layer closer to the AFM layer than to the pinned layer. The stack also includes a non-magnetic spacer layer between and in contact with the pinned stabilization layer and with the pinned layer. A magnetic coupling between the pinned stabilization layer and the pinned layer is no more than 50% of a magnetic coupling between the pinned stabilization layer and the AFM layer.

Abstract: The embodiments generally relate to a read head in a magnetic recording head. The read head utilizes a sensor structure having a pinned magnetic structure with a magnetic field, a barrier layer disposed on top of the pinned magnetic structure, a free layer disposed on top of the barrier layer, and an interlayer coupling field canceling layer disposed on top of the free layer. The interlayer coupling field canceling layer has a cancelling magnetic field pinned anti-parallel the magnetic field of the pinned magnetic structure.

Abstract: A magnetic head, according to one embodiment, includes a sensor structure extending from an air bearing surface end thereof in a stripe height direction, the sensor structure having sidewalls on opposite sides thereof, the sidewalls extending between a top and a bottom of the sensor structure, the sidewalls extending in the stripe height direction, wherein a spacing between the sidewalls in a track width direction along the top of the sensor structure is about constant therealong in the stripe height direction.

Abstract: A magnetic read head and associated circuitry for reducing side track noise and decreasing read width, thereby providing increased data density. The magnetic read head includes first and second sensor elements that are aligned with one another in a data track direction, with the first sensor element being wider than the second sensor element. Electrical circuitry is connected with the read head in such a manner as to read a first signal from the first sensor element and a second signal from a second sensor element. Because the second sensor element is wider than the first sensor element, it will read more side signal noise from adjacent data tracks than will the second sensor element. The circuitry connected with the first and second sensor element detects and distinguishes the side signal noise and separates it out from the data signal, based sensor width difference and location difference.

Abstract: A current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) has a multilayer reference layer containing a Heusler alloy. The multilayer reference layer includes a crystalline non-Heusler alloy ferromagnetic layer on an antiferromagnetic layer, a Heusler alloy layer, and an intermediate crystalline non-Heusler alloy of the form CoFeX, where X is one or more of Ge, Al, Si and Ga, located between the non-Heusler alloy layer and the Heusler alloy layer. The CoFeX alloy layer has a composition (CoyFe(100-y))zX(100-z) where y is between about 10 and 90 atomic percent, and z is between about 50 and 90 atomic percent. The CoFeX alloy layer induces very strong pinning, which greatly lessens the likelihood of magnetic instability by the spin polarized electron flow from the free layer to the reference layer.

Abstract: A method is provided for providing a magnetic recording transducer having a pinning layer with high pinning field stability. A bottom structure comprising a substrate, a magnetic shield above the substrate, a magnetic seed layer above the shield, a nonmagnetic spacer layer above the magnetic seed layer, and a layer of antiferromagnetic (AFM) material on the nonmagnetic spacer layer is provided. The bottom structure is heated to a temperature of at least 373 Kelvin (K) and then the bottom structure is cooled until the temperature of the structure is reduced to less than 293K. A pinned layer is deposited on the AFM layer, a nonmagnetic spacer is provided on the pinned layer, and a read sensor fabricated above the nonmagnetic spacer. In one embodiment, cooling the structure comprises reducing the temperature of the structure by at least 100K in less than 25 minutes.