Abstract: Memory devices and methods of repairing a memory are provided. A first array includes normal memory cells, and a second array includes repair memory cells. The repair memory cells are configured to be used in place of the normal memory cells. A look-up table comprises memory bitcells configured to store a set of entries including addresses of defective memory cells of the normal memory cells. A match circuit is configured to evaluate whether an input memory address is stored as a defective address in the memory bitcells. The match circuit is also configured to generate a selection signal for selecting the normal memory cells or the repair memory cells based on the evaluation.

Abstract: An electro-optical device a pixel circuit located at a position corresponding to an intersection of a scan line and a data line, a first potential line supplies a first potential, a second potential line supplies a second potential, and a third potential line supplies a third potential. The pixel circuit includes a light emitting element and a memory circuit. The memory circuit that is disposed between the first potential line and the second potential line, and that includes a first transistor. A source of the first transistor is electrically connected to the first potential line. The light emitting element is disposed between a drain of the first transistor and the third potential line. An absolute value of a potential between the first potential and the second potential is smaller than an absolute value of a potential between the third potential and the second potential.

Abstract: A memory cell for computing-in-memory applications is controlled by a first bit line, a second bit line, a word line and a read word line. The read word line transmits an input value. The memory cell includes a plurality of read-decoupled cells. Each of the read-decoupled cells stores a weight and includes a first read-decoupled transistor and a second read-decoupled transistor. The first read-decoupled transistor has a first transistor width and is controlled by the weight. The second read-decoupled transistor has a second transistor width equal to the first transistor width and generates a read bit line signal according to the input value, the weight and the second transistor width. The second transistor width of the second read-decoupled transistor of one of the read-decoupled cells is two times larger than the second transistor width of the second read-decoupled transistor of another one of the read-decoupled cells.

Abstract: A fine grained negative wordline scheme for SRAM memories is disclosed. The scheme includes a circuit having a static random access memory (SRAM) cell including at least a wordline coupled to a plurality of NFETs of a transistor array. The circuit further includes a wordline driver including a plurality of inverters coupled between a wordline group decode node, a power supply and the wordline. Overvoltage on the wordline driver and NFETs of the SRAM cell are eliminated by applying a power gating mode and lowering the power supply voltage.

Abstract: An integrated circuit containing SRAM cells. Each SRAM cell has a PMOS driver transistor, a PMOS passgate transistor, and at least two separate n-wells. The integrated circuit also has an n-well bias control circuit that is configured to independently bias the n-wells of an addressed SRAM cell. Moreover, a process of operating an integrated circuit that contains SRAM cells. The process includes writing a low data bit value, writing a high data bit value, and reading a data bit value of an addressed SRAM cell.

Abstract: Provided is a method of operating a controller to control an operation of a semiconductor memory device. The method includes: determining a minimum pass tapped delay of the semiconductor memory device based on a first offset; determining a maximum pass tapped delay of the semiconductor memory device based on a second offset; and determining a tapped delay of the semiconductor memory device based on the determined minimum pass tapped delay and the determined maximum pass tapped delay.

Abstract: A technique relates to a circuit. At least one 4 transistor (4T) static random access memory (SRAM) bitcell is included. Each of the 4T SRAM bitcells includes a first PFET, a first NFET, a second PFET, and a second NFET, the first PFET and the first NFET being coupled to form a first output node, and the second PFET and the second NFET being coupled to form a second output node. A pulldown circuit is coupled to the first NFET, the pulldown circuit operable to pull down a voltage at the first output node. A feedback circuit is operable to monitor the first output node, the feedback circuit operable to control the pulldown circuit.

Abstract: A module includes a high speed voltage node, a pre-charging circuit, and a cross coupled circuit. The pre-charging circuit includes a pre-charger configured to pre-charge complementary first and second lines of a memory device to a level of a source voltage. The cross coupled circuit is configured to pull one of the first and second lines to a level of a high speed voltage at the high speed voltage node higher than the level of the source voltage. As such, a memory cell of the memory device can be read at a high speed.

Abstract: Disclosed herein is a method of performing a non-volatile write to a memory containing a plurality of volatile memory cells grouped into words, with each volatile memory cell having at least one non-volatile memory cell associated therewith. The method includes steps of a) receiving a non-volatile write instruction including at least one address and at least one data word to be written to that at least one address, b) writing the at least one data word to the volatile memory cells of a word at the at least one address, and c) writing data from the volatile memory cells written to during step b) to the non-volatile memory cells associated to those volatile memory cells by individually addressing those non-volatile memory cells for non-volatile writing, but not writing data from other volatile memory cells to their associated non-volatile memory cells because those non-volatile memory cells are not addressed.

Abstract: The present invention provides a layout pattern of a static random access memory (SRAM), comprising at least one substrate, two SRAM units on the substrate, respectively located in a first region and a second region which is adjacent to the first region. Each of the SRAM units includes a first inverter coupled to a second inverter and configured to form a latching circuit, the first inverter includes a first pull-up transistor (PU1) and a first pull-down transistor (PD1), the second inverter includes a second pull-up transistor (PU2) and a second pull-down transistor (PD2). A dummy layer crossing the first a region and the second region, and between the PD1 in the first region and the PD1 in the second region, and a contact structure on the dummy layer, electrically connected to a voltage source Vss.

Abstract: A memory device having a plurality of voltage regions and a method of operating the same are provided. The memory device includes a memory cell array, a data path region including data processing blocks transmitting read/write data from/to the memory cell array during read/write operations, and a control signal path region including control blocks controlling the data processing blocks during the read/write operations. The data path region selectively receives a first high power voltage or a first low power voltage in accordance with an operating mode of the memory device. The control signal path region receives the first high power voltage regardless of the operating mode.

Abstract: A Static Random Access Memory (SRAM) array power supply circuit is presented. The circuit comprises an SRAM test unit having a substantially same structure as a basic SRAM unit in the SRAM array; a switch device connected to a power source, the SRAM test unit, and the SRAM array; and a switch control circuit connected to the SRAM test unit and the switch device. When a test voltage in the SRAM test unit is lower than a threshold voltage, the switch device is closed so that the power source begins to charge the SRAM array and the SRAM test unit. The SRAM test unit provides an early warning for the SRAM array, allowing the latter to be charged upon fulfillment of a condition (e.g., charge is low). Compared to conventional circuits, this circuit provides an output voltage that is more stable and less susceptible to the changes in external conditions such as temperature or pressure.

Abstract: Various implementations described herein refer to an integrated circuit having a bitcell coupled to a bitline and a column multiplexer device coupled to the bitline between the bitcell and an output of a write driver. The integrated circuit may include a first signal line coupled to a gate of the column multiplexor device that provides a first transition signal. The integrated circuit may include a second signal line coupled to an input of the write driver that provides a second transitioning signal, and the second transition signal transitions substantially similar to the first transitioning signal. The integrated circuit may include a coupling device coupled between the first signal line and the second signal line.

Abstract: A semiconductor device includes a bottom tier including a plurality of first vertical transistors and at least one contact disposed on a first inverter gate. The device further includes a top tier including a plurality of second vertical transistors and a second inverter gate, and a monolithic inter-tier via (MIV) that lands on the at least one contact via the second inverter gate to create a three-dimensional monolithic vertical transistor memory cell with unified inter-tier cross-couple.

Abstract: A data network may include a data bus and network nodes. The data bus may be a differential data bus having first and second differential signal lines that convey differential signals between the nodes. A bimodal impedance terminator may be coupled to the first and second differential signal lines at one or both ends of the data bus. The bimodal impedance terminator may include a first resistor coupled between the first differential signal line and a circuit node and a second resistor coupled between the second differential signal line and the circuit node. A capacitor may be coupled between the circuit node and ground. A third resistor may be coupled between the circuit node and ground in series with the capacitor. The bimodal impedance terminator may terminate both the differential-mode impedance and the common-mode impedance of the data bus to reduce signal reflections at the ends of the data bus.

Abstract: The independent claims of this patent signify a concise description of embodiments. Disclosed is technology for detrapping charges in gate dielectrics in P-channel pull-up transistors and N-channel pull-down transistors in a portion of a static random access memory (SRAM) array due to hot carrier injection (HCI), negative bias temperature instability (NBTI) and positive bias instability (PBTI). This Abstract is not intended to limit the scope of the claims.

Abstract: Cache mode for word lines where the cache mode utilizes an internal timer for a memory cell to disable connection of a voltage to a transistor of a word line driver of the memory cell before an end of a specified end of period. By early disconnection, the local controls of the memory cell may provide additional time to settle after disconnection of the voltage without interfering with operations (e.g., read, write, activate) of the memory cell, since the internal timer may be programmed to be greater than or equal to a worst case scenario for the operations.

Abstract: There is provided a semiconductor integrated circuit device that can generate a unique ID with the suppression of overhead. When a unique ID is generated, the potential of a word line of a memory cell in an SRAM is raised above the power supply voltage of the SRAM, and then lowered below the power supply voltage of the SRAM. When the potential of the word line is above the power supply voltage of the SRAM, the same data is supplied to both the bit lines of the memory cell. Thereby, the memory cell in the SRAM is put into an undefined state and then changed so as to hold data according to characteristics of elements or the like configuring the memory cell. In the manufacture of the SRAM, there occur variations in characteristics of elements or the like configuring the memory cell. Accordingly, the memory cell in the SRAM holds data according to variations occurring in the manufacture.

Abstract: A memory cell including a first transistor, an inverter, and a second transistor is provided. A first terminal of the first transistor serves as a data input terminal of the memory cell. A control terminal of the first transistor receives a write control signal. A second terminal of the first transistor is coupled to a memory node. An input terminal of the inverter is coupled to the memory node. An output terminal of the inverter serves as a data output terminal of the memory cell. A first terminal of the second transistor is coupled to a first voltage. A control terminal of the second transistor is coupled to the output terminal of the inverter. A second terminal of the second transistor is coupled to the memory node. A body of the second transistor is coupled to a second voltage. A voltage value of the second voltage is not equal to a voltage value of the first voltage to reduce a leakage current of the second transistor.

Abstract: A logic circuit in a system LSI (Large Scale Integrated Circuit) is provided with a power switch so as to cut off the switch at the time of standby, reducing leakage current. At the same time, an SRAM (Static Random Access Memory) circuit of the system LSI controls a substrate bias to reduce leakage current.

Abstract: A fuse latch of a semiconductor device is disclosed. The fuse latch includes a plurality of PMOS transistors and a plurality of NMOS transistors to latch fuse cell data. In the fuse latch, the PMOS transistors are formed in a single P-type active region, and the NMOS transistors are arranged in a two-stage structure at one side of the P-type active region.

Abstract: A PUF code providing apparatus includes a non-volatile memory cell pair and a data sensing circuit. The sensing circuit is coupled to the non-volatile memory cell pair, reads two initial statuses of the non-volatile memory cell pair and generates a PUF code by comparing the two initial statuses of the non-volatile memory cell pair.

Abstract: A write assist circuit includes: a memory-adapted latch and memory-adapted third and fourth NMOS transistors. The latch includes: a memory-adapted first PMOS transistor and a memory-adapted first NMOS transistor connected in series between a power-supply voltage and a first node, the first node being selectively connectable to a ground voltage; and a memory-adapted second PMOS transistor and a memory-adapted second NMOS transistor connected in series between the power-supply voltage and the second node, the second node being selectively connectable to the ground voltage. The third NMOS transistor is connected in series between the first node and the ground voltage; and the fourth NMOS transistor connected in series between the second node and the ground voltage. A gate electrode of each of the third and fourth transistors is connected to a latch-enable signal-line thereby for controlling the memory-adapted latch.

Abstract: A content addressable memory (CAM) cell system is provided. The CAM cell system includes a first memory cell, a first logic circuitry and a first compare circuitry. The first logic circuit includes a first n-FET, a first p-FET, and a first input terminal. A gate of the first n-FET and a gate of the first p-FET are galvanically coupled to the first input terminal. The first compare circuitry is communicatively coupled to the first memory cell via a first coupling, and to the first input terminal via a second coupling. The first compare circuitry is configured to receive first data stored in the first memory cell via the first coupling, receive first match data, transmit a first binary logical value to the first input terminal via the second coupling in response to the first data not matching the first match data, and transmit a second binary logical value to the first input terminal via the second coupling in response to the first data matching the first match data.

Abstract: Various embodiments of the present technology may comprise a method and apparatus for power management of a memory cell. The memory cell may be configured to operate at various voltage levels to mitigate power dissipation. The memory cell may receive a first voltage level during an active state and receive a second voltage level during an idle state. The active and idle states may be known based on predetermined system parameters. The second voltage level may be selected according to the particular characteristics of the memory cell in order to retain input data.

Abstract: The present invention provides a layout pattern of a static random access memory (SRAM), comprising at least two inverters coupled to each other for storing data, each inverter comprising an L-shaped gate structure on a substrate, the L-shaped gate structure includes a first portion arranged along a first direction and a second portion aligned along a second direction, wherein the first portion crosses a first diffusion region to form a pull-up device, and the first portion crosses a second diffusion region and a third diffusion region to form a pull-down device, and each of the inverters includes a local interconnection layer, crossing the second diffusion region and the third diffusion region.

Abstract: A memory array and a semiconductor chip are provided. The memory array includes memory cells, each includes: first and second pull-up transistors, first and second pull-down transistors, and first and second pass-gate transistors. A source/drain of the first pull-up transistor is coupled to a source/drain of the first pull-down transistor. A source/drain of the second pull-up transistor is coupled to a source/drain of the second pull-down transistor. Gates of the second pull-up and pull-down transistors are coupled to the first node. Gates of the first pull-up and pull-down transistors are coupled to the second node. The first and second pass-gate transistors are respectively coupled to the first and second nodes. The first and second pull-up transistors respectively include a first active structure having a bottom portion including a strained semiconductor material and a top portion including an unstrained semiconductor material. The first active structures continuously extend across the memory array.

Abstract: Provided is a method of operating a controller to control an operation of a semiconductor memory device. The method includes: determining a minimum pass tapped delay of the semiconductor memory device based on a first offset; determining a maximum pass tapped delay of the semiconductor memory device based on a second offset; and determining a tapped delay of the semiconductor memory device based on the determined minimum pass tapped delay and the determined maximum pass tapped delay.

Abstract: Embodiments herein provide a method for reducing power dissipation in a Static Random Access Memory (SRAM) device. The method includes determining, by the tracking circuit, whether at least one SRAM Bit-Cell discharges power from at least one BL exceeding a pre-defined voltage level required for a sense amplifier to perform a read operation. Furthermore, the method includes reducing, by the WL driver, the power discharged from the at least one BL by controlling a WL voltage power supply switch of the WL driver using a SAE signal and adjusting a pulse width of the at least one WL to pull down the at least one WL using a NMOS circuit when the at least one SRAM Bit-Cell discharges the power from the at least one BL exceeding the pre-defined voltage level.

Abstract: A semiconductor device includes first, second, third, and fourth active regions arranged along a first direction. The first, second, third, and fourth active regions includes channel regions and source/drain (S/D) regions of first, second, third, and fourth transistors respectively, the first and fourth transistors are of a first conductivity type, and the second and third transistors are of a second conductivity type opposite the first conductivity type. The semiconductor device further includes a fifth active region between the second and third active regions. The fifth active region includes channel regions and S/D regions of fifth and sixth transistors that are of same conductivity type. The semiconductor device further includes first, second, third, fourth, fifth, and sixth gates. The first through sixth gates are disposed over the channel regions of the first through sixth transistors respectively. The first, second, and fifth gates are electrically connected.

Abstract: A precharge circuit includes: a precharge time controller suitable for generating a precharge time control signal based on a threshold voltage of a transistor; a precharge control signal generator suitable for generating a precharge control signal activated during a predetermined period based on the precharge time control signal from the precharge time controller; and a precharger suitable for precharging a bit line and a bit line bar during the predetermined period based on the precharge control signal from the precharge control signal generator.

Abstract: A semiconductor device includes a substrate, a first transistor, and a second transistor. The first transistor is disposed on the substrate. The second transistor is disposed on the substrate. A gate of the first transistor and a gate of the second transistor are integrally formed, and the first transistor and the second transistor have different threshold voltages.

Abstract: An integrated circuit structure includes an SRAM array including a first sub-array having a first plurality of rows and a plurality of columns of SRAM cells, and a second sub-array having a second plurality of rows and the plurality of columns of SRAM cells. A first bit-line and a first complementary bit-line are connected to the first and the second pass-gate MOS devices of SRAM cells in a column in the first sub-array. A second bit-line and a second complementary bit-line are connected to the first and the second pass-gate MOS devices of SRAM cells in the column in the second sub-array. The first bit-line and the first complementary bit-line are disconnected from the second bit-line and the second complementary bit-line. A sense amplifier circuit is electrically coupled to, and configured to sense, the first bit-line, the first complementary bit-line, the second bit-line, and the second complementary bit-line.

Abstract: A radio frequency antenna switch includes an antenna port, a radio frequency signal port, and at least one branch coupled to the antenna port or the radio frequency signal port, where each branch includes multiple transistors which are coupled in a stack manner, channel width to length ratios of a preset number of transistors in the transistors progressively decrease in a direction away from the antenna port, where the preset number is less than or equal to the total number of the transistors. With the radio frequency antenna switch, capacitances of the preset number of transistors close to the antenna port increase, and distributed voltages that these transistors close to an antenna end in an off state need to bear are reduced.

Abstract: A semiconductor device includes a substrate, a semiconductor fin, an isolation plug, and an isolation structure. The semiconductor fin is over the substrate. The isolation plug is over the substrate and adjacent to an end of the semiconductor fin. The isolation structure is over the substrate and adjacent to sidewalls of the semiconductor fin and the isolation plug. A top surface of the isolation structure is in a position lower than a top surface of the isolation plug.

Abstract: In one embodiment, an integrated circuit includes at least one logic circuit supplied by a first supply voltage and at least one memory circuit coupled to the logic circuit and supplied by a second supply voltage. The memory circuit is configured to be read and written responsive to the logic circuit even if the first supply voltage is less than the second supply voltage during use. In another embodiment, a method includes a logic circuit reading a memory cell, the logic circuit supplied by a first supply voltage; and the memory cell responding to the read using signals that are referenced to the first supply voltage, wherein the memory cell is supplied with a second supply voltage that is greater than the first supply voltage during use.

Abstract: A semiconductor device having an SRAM which includes: a monolithic first active region in which a first transistor and a fifth transistor are disposed; a second active region separated from the first active region, in which a second transistor is disposed; a monolithic third active region in which a third transistor and a sixth transistor are disposed; and a fourth active region separated from the third active region, in which a fourth transistor is disposed. Each driver transistor is divided into a first transistor and a second transistor (or a third transistor and a fourth transistor) and these driver transistors are disposed over different active regions.

Abstract: A memory management method is provided. The method includes selecting a target physical programming unit among a plurality of physical programming units of a rewritable non-volatile memory module; identifying a target storage status and a target read voltage according to a memory type of the rewritable non-volatile memory module; using the target read voltage to read the target physical programming unit to obtain a bit value ratio; and identifying a storage pattern of the target physical programming unit according to the bit value ratio.

Abstract: A memory macro includes: word lines; memory cells arranged in an array of columns and rows, the rows corresponding to the word lines; and switching circuits corresponding to the columns, each switching circuit being configured to selectively provide a first voltage value of a first voltage source or a different second voltage value of a second voltage source to corresponding voltage supply nodes of the columns; and wherein the word lines are configured to receive the second voltage value as a high logical value of the word lines; a selected one or more of the word lines is activated during a write operation, thereby defining an elapse of the write operation; and each switching circuit is further configured to selectively provide the corresponding first voltage value or the second voltage value substantially for an entirety of the write operation.

Abstract: A method of operating a memory device includes providing a first voltage to a memory array, providing a second voltage to a peripheral logic circuit, receiving an access request, and in response to the access request, increasing a third voltage of a bit line of the memory array during a precharge phase.

Abstract: When selectively erasing one sub-block, a control circuit applies, in a first sub-block, a first voltage to bit lines and a source line, and applies a second voltage smaller than the first voltage to the word lines. Then, the control circuit applies a third voltage lower than the first voltage by a certain value to a drain-side select gate line and a source-side select gate line, thereby performing the erase operation in the first sub-block. The control circuit applies, in a second sub-block existing in an identical memory block to the selected sub-block, a fourth voltage substantially identical to the first voltage to the drain side select gate line and the source side select gate line, thereby not performing the erase operation in the second sub-block.

Abstract: A method is provided for evaluating operational and financial performance for dispatchers in power grid control centers associated with utility systems. A comprehensive operating plan is provided that applies after the fact analysis for performance metrics, root-cause impacts and process re-engineering. after the fact analysis of past events and practices is performed. Actual system and resource conditions are captured. the system and resource conditions are supplied to a relational database. A scheduler engine receives the actual system and resource conditions from the relational database and processes it to calculate system performance.

Abstract: Various embodiments may provide a circuit arrangement. The circuit arrangement may include a first spin-orbit torque magnetic tunnel junction cell, a second spin-orbit torque magnetic tunnel junction cell, a first driver circuit arrangement, a second driver circuit arrangement, and a read circuit arrangement. The circuit arrangement allows for the operation of a non-volatile flip-flop based on spin-orbit torque effect.

Abstract: A semiconductor device includes a SRAM (Static Random Access Memory) circuit. The SRAM circuit includes a static memory cell, a word line coupled with the static memory cell, a pair of bit lines coupled with the static memory cell, a first interconnection coupled with the static memory cell, and supplying a first potential, a second interconnection coupled with the static memory cell, and supplying a second potential lower than the first potential, a first potential control circuit controlling a potential of the second interconnection, and a second potential control circuit controlling a potential of the first interconnection. The SRAM circuit includes, as an operation mode a first operation mode for reading data from the SRAM circuit, or for writing data into the SRAM circuit, and a second operation mode for reducing power consumption than the first operation mode.

Abstract: Some embodiments include apparatuses and methods having an interface to communicate with a host, memory cells, and a control unit coupled to the interface to associate a portion of the memory cells with a logical address range based on control information provided to the interface from the host. The control unit is configured to cause the portion of the memory cells to operate in a configuration mode indicated by the control information from the host. Each memory cell in the portion of the memory cells is operable to store at most one bit of information if the configuration mode is a first configuration mode and to store more than one bit of information if the configuration mode is a second configuration mode.

Abstract: An apparatus is disclosed, including a plurality of memory cells, in which a given memory cell is coupled to a true bit line, a complement bit line, and a power supply signal. The apparatus also includes a pre-charge circuit that is configured to charge, for a first duration, the true bit line and the complement bit line to a voltage level that is less than a voltage level of the power supply signal. The pre-charge circuit is also configured to maintain, for a second duration that is longer than the first duration, the voltage level on the true bit line and the complement bit line.

Abstract: A 3-D IC includes a substrate having a substrate surface. A first semiconductor device has a first electrical contact and is formed in a first area of the surface on a first plane substantially parallel to the substrate surface. A second semiconductor device has a second electrical contact and is formed in a second area of the surface on a second plane substantially parallel to the surface and vertically spaced from the first plane in a direction substantially perpendicular to the surface. A first electrode structure includes opposing top and bottom surfaces substantially parallel to the substrate surface, and a sidewall connecting the top and bottom surfaces such that the electrode structure forms a three dimensional electrode space.

Abstract: In a method of throttling temperature of a nonvolatile memory device including a memory cell array, a current temperature of the nonvolatile memory device may be detected periodically. The current temperature may be compared with a reference temperature. Whether an external input/output command, which is provided by a memory controller, exists may be determined when the current temperature is lower than the reference temperature. An input/output operation, which corresponds to the external input/output command, may be performed on the memory cell array when the external input/output command exists. A desired and/or alternatively predetermined internal input/output operation may be performed on the memory cell array regardless of a command from the memory controller when the external input/output command does not exist.

Abstract: When threshold voltages of constituent transistors are reduced in order to operate an SRAM circuit at a low voltage, there is a problem in that a leakage current of the transistors is increased and, as a result, electric power consumption when the SRAM circuit is not operated while storing data is increased. Therefore, there is provided a technique for reducing the leakage current of MOS transistors in SRAM memory cells MC by controlling a potential of a source line ssl of the driver MOS transistors in the memory cells.

Abstract: A method of fabricating a memory array includes designing first layout sections in a row direction, each first layout section including first and second control lines in a first metal layer, and an upper conductive line in a third metal layer. A lower conductive line in a second metal layer is coupled to the first control line and the first control line is isolated from the second control line. A second layout section is inserted at every N-th first layout section, N being a positive integer equal to or greater than 2. The second layout section includes the first control line, the second control line and a lower conductive line in the second metal layer coupled to the second control line and to an upper conductive line in the third metal layer. The lower conductive lines in the first and second layout sections are isolated from each other.