Abstract: A computing system, processing unit, and method are disclosed for detecting a maximum voltage power supply for performing memory testing. The method includes generating, using a sense amplifier of a processing unit and based on a timing of a received pulse signal, first and second drive signals that collectively indicate which of first and second voltages is greater, the first and second voltages produced by respective first and second power supplies. The method also includes coupling, based on the first and second drive signals, the power supply corresponding to the relatively greater voltage of the first and second voltages with the memory.

Abstract: Described is an apparatus comprising: a first select-line; a second select-line; a bit-line; a first bit-cell including a resistive memory element and a transistor, the first bit-cell coupled to the first select-line and the bit-line; a buffer with an input coupled to the first select-line and an output coupled to the second select-line; and a second bit-cell including a resistive memory element and a transistor, the second bit-cell coupled to the second select-line and the bit-line. Described is a magnetic random access memory (MRAM) comprising: a plurality of rows, each row including: a plurality of bit-cells, each bit-cell having an MTJ device coupled to a transistor; and a plurality of buffers, each of which to buffer a select-line signal for a group of bit-cells among the plurality of bit-cells; and a plurality of bit-lines, each row sharing a single bit-line among the plurality of bit-cells in that row.

Abstract: Embodiments include apparatuses, methods, and systems for determining a power consumption of a circuit block in an integrated circuit. The integrated circuit may include first and second power supply networks. In some embodiments, the integrated circuit may include a plurality of instances of a circuit block under test. A first instance of the circuit block may be coupled to the first power supply network during a first test run, and a second instance of the circuit block may be coupled to the second power supply network during a second test run. In other embodiments, a single instance of a circuit block under test may be coupled with the first power supply network during a first test run and coupled with the second power supply network during a second test run. The power consumption of the circuit block may be determined based on the first and second test runs.

Abstract: A system and method for efficient data eye training reduces the time and resources spent calibrating one or more memory devices. A reference voltage (Vref) calibration mechanism reduces the time and resources for calibration by reducing the number of tests needed to sufficiently determine the boundaries of the data eye of the memory device by using a combination of small steps and small steps to find a preferred reference voltage. In one example, the Vref calibration mechanism uses small steps of the reference voltage in a first range above a nominal reference voltage to find a maximum eye width then uses small steps to more precisely find the maximum eye width. If a maximum reference voltage is found in the first range then the second range below the nominal reference voltage does not need to be tested thereby saving additional time and resources.

Abstract: The disclosed invention provides a semiconductor storage device that creates no trouble, independently of power-on sequence. A semiconductor storage device includes a first power supply for the memory cells, a second power supply which is turned on independently of the first power supply and provided for a peripheral circuit which is electrically coupled to the memory cells, and a word line level fixing circuit for fixing the level of the word lines, which operates in accordance with turn-on of the first power supply. The word line level fixing circuit includes multiple level fixing transistors which are provided to correspond respectively to the word lines and provided between one of the word lines and a fixed potential and a level fixing control circuit which controls the level fixing transistors in accordance with input of a signal responding to turn-on of the second power supply.

Abstract: An integrated ultra wideband transceiver. The transceiver comprises a transmitter, a receiver, and at least one on-chip monopole antenna electrically connected to at least one of the transmitter or receiver for transmitting and/or receiving electrical signals. The transceiver further comprises a clock generator comprising a temperature-compensated relaxation oscillator, a baseband controller electrically connected to, and configured to exert a measure of control over, at least one the transmitter, receiver, or clock generator, and a micro-battery operative to provide operating power to each of the transmitter, receiver, clock generator, and baseband controller.

Abstract: A method of driving a display panel includes: selectively providing a resistance using resistor parts in response to address signals, where the resistor parts have resistances, respectively; and outputting common voltages to the display panel based on the selectively provided resistance.

Abstract: Described is an apparatus and system for improving write margin in memory cells. In one embodiment, the apparatus comprises: a first circuit to provide a pulse signal with a width; and a second circuit to receive the pulse signal and to generate a power supply for the memory cell, wherein the second circuit to reduce a level of the power supply below a data retention voltage level of the memory cell for a time period corresponding to the width of the pulse signal. In one embodiment, the apparatus comprises a column of memory cells having a high supply node and a low supply node; and a charge sharing circuit positioned in the column of memory cells, the charge sharing circuit coupled to the high and low supply nodes, the charge sharing circuit operable to reduce direct-current (DC) power consumption.

Abstract: A memory system includes: a first memory device including a first internal voltage generation circuit; and a second memory device including a second internal voltage generation circuit, wherein the first memory device and the second memory device receive an identical chip enable signal, and when the chip enable signal is disabled, the first internal voltage generation circuit and the second internal voltage generation circuit are controlled in a standby mode, and when the chip enable signal is enabled, the first internal voltage generation circuit and the second internal voltage generation circuit are independently controlled to have one mode between a weak active mode and a strong active mode.

Abstract: A storage device may include a processor and a memory device including a multilevel memory cell. The processor may correlate a first physical page address and a second physical page address, each address being associated with the multilevel memory cell. The processor also may apply a first read operation to the memory cell to determine a value of a first bit associated with the first physical page address. The processor additionally may apply at least a second read operation to the multilevel memory cell to determine a value of a second bit associated with the second physical page address. The processor may determine, based at least in part on the value of the first bit and the value of the second bit, a soft decision value associated with the second bit. The processor may verify the value of the second bit based at least in part on the soft decision value.

Abstract: To improve reading accuracy of a sense amplifier circuit and a semiconductor memory device. A sense amplifier circuit includes an N type FET which is a sensing transistor connected between a power supply and a ground via a data line that extends to a memory cell, a resistance element that is connected between a gate of the sensing transistor and the power supply, and a capacitance element that is connected between the gate of the sensing transistor and the ground.

Abstract: According to one embodiment, a method for manufacturing a magnetic memory is disclosed. The method includes forming a magnetoresistive element on a substrate. The method further includes measuring an electrical characteristic of the magnetoresistive element, and applying a voltage to the magnetoresistive element which the electrical characteristic is measured.

Abstract: A solid state drive (SSD) device using a flash memory and including a non-volatile memory that differs in type from the flash memory. The SSD device receives data to be written to the flash memory; stores the received data in the non-volatile memory; stores the data stored in the non-volatile memory to the flash memory; and stores, in the non-volatile memory, flow data indicating a flow of tasks to be undertaken while storing the received data in the non-volatile memory and storing the data stored in the non-volatile memory to the flash memory.

Abstract: A voltage generation circuit may include: a main code table suitable for outputting a main code based on an operation signal; a main voltage generator suitable for generating a main voltage corresponding to the main code; a trimming module suitable for comparing the main voltage with a target voltage to output a trimming signal; a trimming code table suitable for outputting a trimming code corresponding to the trimming signal; a code determination module suitable for outputting the main code and the trimming code when the trimming code is determined to be valid, and outputting the main code and a output code when the trimming code is determined to be invalid; and an operation voltage generator suitable for outputting an operation voltage based on the main code and a code selected from the trimming code and the substitute code.

Abstract: An address decoder circuit is designed to address and bias memory cells of a memory array of a non-volatile memory device. The address decoder circuit includes a charge-pump stage configured to generate a boosted negative voltage. A control stage is operatively coupled to the charge-pump stage for controlling switching on/off thereof as a function of a configuration signal that determines the value of the boosted negative voltage. A decoding stage is configured so as to decode address signals received at its input and generate biasing signals for addressing and biasing the memory cells. A negative voltage management module has a regulator stage, designed to receive the boosted negative voltage from the charge-pump stage and generate a regulated negative voltage for the decoding stage, having a lower ripple as compared to the boosted negative voltage generated by the charge-pump stage.

Abstract: An apparatus is provided which comprises: a plurality of memory cells; a bias logic coupled with at least one memory cell of the plurality, the bias logic to: apply a first read voltage to the at least one memory cell; and apply a second read voltage to the at least one memory cell, the first read voltage being higher than the second read voltage; and a first circuit operable to float a word-line coupled to the at least one memory cell before the bias logic applies the first read voltage to the at least one memory cell. A method is provided which comprises: performing a first read operation to at least one memory cell; and performing a second read operation to the at least one memory cell after the first read operation completes, wherein the second read operation is different from the first read operation.

Abstract: Various implementations described herein may refer to and may be directed to circuitry for an integrated circuit using topology configurations. For instance, in one implementation, such circuitry may include a memory array having a plurality of memory cells. Such circuitry may also include one or more reconfigurable sense amplifier devices coupled to the memory array and configured to amplify differential voltage levels received from the memory array. The reconfigurable sense amplifier devices may include a plurality of sense amplifier circuits configured to be arranged in one of a plurality of topology configurations, where the topology configurations include a parallel configuration and a cross parallel configuration. The reconfigurable sense amplifier devices may also include one or more switches configured to set the plurality of sense amplifier circuits into the plurality of topological configurations based on one or more control bits.

Abstract: An apparatus includes a first circuit, a second circuit, and a third circuit. The first circuit may be configured to (i) reduce a current value in a sequence of input values that have been carried on a single-ended line of a data bus coupled to a memory channel to generate a version of the current value, and (ii) reduce a first reference voltage to generate a second reference voltage. The second circuit may be configured to slice the current value with respect to the first reference voltage to generate a first intermediate value. The third circuit may be configured to slice the version of the current value with respect to the second reference voltage to generate a second intermediate value. The first intermediate value and the second intermediate value generally define a sliced value of the current value.

Abstract: According to an embodiment, a memory system includes first wiring lines; second wiring lines; third wiring lines; fourth wiring lines; and first and second storages. The first storage includes first memory cells arranged at intersections of the first wiring lines and the second wiring lines. Each of the third wiring lines is connected to any one of the first wiring lines. Each of the fourth wiring lines is pre-associated with a logical address specified by a host apparatus. The second storage includes second memory cells arranged at intersections of the third wiring lines and the fourth wiring lines. A resistance state of each of the second memory cells is set to a first resistance state or a second resistance state where a resistance value is lower than that in the first resistance state, according to a correspondence relationship between the logical address and the first wiring line.

Abstract: A memory cell includes a storage element coupled to a first data node and a second data node, a first programmable nonvolatile element and a second programmable nonvolatile element, a first switch element and a second switch element. The first switch element is configured to couple the first programmable nonvolatile element to the first data node during a first read mode of the memory cell. The second switch element is configured to couple the second programmable nonvolatile element to the second data node during the first read mode.

Abstract: The disclosure relates to an electronic memory system, and more specifically, to a system for storing data in an adjustably partitionable memory array, and a method to store data in an adjustably partitionable memory array. According to an embodiment of the disclosure, a system to store data in an adjustably partitionable memory array is provided, the system including a plurality of memory cells arranged in an array of rows and columns, a plurality of bit lines, and a plurality of switches, wherein each bit line is electrically coupled to a column of memory cells and each bit line comprises a switch configured to allow the respective bit line to be partitioned by opening of the switch.

Abstract: Techniques are provided for operating a memory device which detect word line short circuits, such as short circuits between adjacent word lines. In an example implementation, during a programming operation, the number of program loops used to complete programming or reach another programming milestone for WLn are counted. If the number of program loops exceeds a loop count limit, the memory cells of WLn+1 are evaluated to determine whether a short circuit is present. The evaluation involves a read operation which counts erased state memory cells in the upper tail of the Vth distribution of WLn+1. If the count exceeds a bit count limit, it is concluded that a short circuit exits between WLn and WLn+1, and a corrective action is taken. The loop count limit is adjusted lower as the number of program-erase cycles increases.

Abstract: A semiconductor memory device includes a ZQ calibration unit configured to generate an output high level voltage (VOH) code according to a VOH control code obtained from a result of comparing a reference voltage with a first VOH; and an output driver configured to generate a data signal having a second VOH determined by the VOH code. The VOH control code includes a pull-up VOH control code and a pull-down VOH control code and the VOH code includes a pull-up VOH code and a pull-down VOH code.

Abstract: An apparatus includes a first circuit and a second circuit. The first circuit may be configured to (i) receive a sequence of input values that have been carried on a single-ended line of a data bus coupled to a memory channel, (ii) slice a previous input value of said sequence of input values to generate a previous output value, (iii) slice a current input value of said sequence of input values to generate a current output value, and (iv) present said current output value on a differential line. The previous input value generally precedes said current input value in said sequence of input values. The second circuit may be configured to decode said previous input value based on a tap coefficient value to generate a plurality of feedback values suitable to reduce an inter-symbol interference in said current input value caused by said previous input value.

Abstract: A memory device and method of operating the memory device are provided. The memory device has bitcells arranged in a plurality of rows and columns. Row driver circuitry provides access to the array of bitcells by selection of an access row of the plurality of rows. The row driver circuitry comprises a retention control latch to store a retention control value and row power gating circuitry responsive to a retention signal to power gate at least one row when the retention control value has a first value and to leave the at least one row powered when the retention control value has a second value. Row-based retention of the content of the bit cells is thus provided, and the leakage current of the memory device when it is in a retention (e.g. sleep) mode, and only some of its rows contain valid data, can thus be reduced.

Abstract: A nonvolatile semiconductor memory device includes an array of memory cells arranged at the position intersecting positions of the word line and the bit line, a control signal generating circuit for carrying out a writing operation including a program for carrying out writing in the memory cell and a verification for verifying whether the data has been correctly written in the memory cell by the program, and a cell source monitoring circuit for detecting a voltage of the source line connected to the memory cell during the writing operation. The control signal generating circuit directly shifts the source line voltage at the time of program to a lower voltage necessary at the time of verification after the end of the program, based on the voltage the source line detected by the cell source monitoring circuit.

Abstract: A semiconductor memory apparatus may include a driving voltage-applying unit and a sub-word line-driving unit. The driving voltage-applying unit may be configured to generate a driving voltage in response to an active signal, a word line-enabling signal and a sub-word line selection signal. The sub-word line-driving unit may be configured to drive a sub-word line as a voltage level of the driving voltage in response to a main word line and the sub-word line selection signal.

Abstract: A memory device includes a first memory cell array including memory cells of a single-ended bitline structure, a second memory cell array including memory cells of a single-ended bitline structure, a reference voltage generator configured to output a bitline voltage of a selected one of the first and second memory cell arrays as a sensing voltage according to an array select signal and output a bitline voltage of an unselected memory cell array as a reference voltage, and a differential sense amplifier configured to amplify and output a difference between the sensing voltage and the reference voltage. Logic states of the sensing voltage and the reference voltage are complementary to each other.

Abstract: A circuit includes an input pin connected to an integrated circuit (IC) that receives an input voltage that is provided to a first voltage circuit within the IC. A pass device having a control input responds to a first control signal state and a second control signal state. The first control signal state turns the pass device off such that the input voltage is switched off to block the passing of the input voltage to a second voltage circuit within the IC. The second control signal state turns the pass device on such that the input voltage is switched through the pass device to the second voltage circuit in a voltage range that is compatible with an input operating voltage range of the second voltage circuit.

Abstract: In some examples, a method includes determining, by a processor of a controller of a data storage device, that a voltage level of a capacitor in the data storage device is above a threshold voltage value, wherein the data storage device includes a capacitor circuit, and wherein the capacitor circuit includes the capacitor. The method further includes controlling, by the processor, the capacitor circuit to cause the capacitor to provide power to circuitry associated with memory devices of the data storage device along with power provided by a host device operably connected to the data storage device.

Abstract: Systems, devices and methods are provided for memory operations. An example system includes: a latch circuit shared by a plurality of memory blocks of a memory device and configured to provide one or more regulation signals for a memory operation; a source line circuit shared by the plurality of memory blocks and configured to provide a source line voltage to the plurality of memory blocks for the memory operation based at least in part on the one or more regulation signals; and a plurality of driver circuits configured to provide a plurality of drive signals to the plurality of memory blocks based at least in part on the one or more regulation signals.

Abstract: A sensing system may include a sense amplifier, a sensing circuit configured to sense a current difference, a data cell selectively coupled to the sensing circuit, a first reference cell selectively coupled to the sensing circuit, and a second reference cell selectively coupled to the sensing circuit. The resistance of the first reference cell and the second reference cell are different.

Abstract: A voltage generation circuit of a semiconductor apparatus includes a first detection block configured to detect an output voltage and output a first detection signal; a second detection block configured to detect the output voltage and output a second detection signal; a signal generation block configured to generate a control signal in response to the first detection signal and the second detection signal; and a voltage generation block configured to generate the output voltage in response to the control signal, wherein responding speeds of the first detection block and the second detection block with respect to a variation in the output voltage are different.

Abstract: A buffer circuit includes an amplification unit suitable for sensing and amplifying an input signal and a reference voltage, a buffer enable unit suitable for enabling the amplification unit based on a buffer enable signal, and a buffer enable signal generation unit suitable for generating the buffer enable signal based on a first or second operation control signal, selected according to a high voltage detection signal.

Abstract: Systems and methods for testing a device under test (DUT) that includes a low power output driver. The methods include providing an input signal to the DUT. The low power output driver is configured to generate a data signal responsive to receipt of the input signal by the DUT and provide the data signal to a signal analyzer via a data signal transmission line. The methods further include determining an expected data signal to be received from the low power output driver and charging at least a portion of the data signal transmission line with a co-drive output signal that is based, at least in part, on the expected data signal. The methods further include receiving a composite data signal with the signal analyzer. The systems include probe heads with a plurality of data signal transmission lines and a plurality of co-drive conductors.

Abstract: This disclosure relates generally to resistive memory systems. The resistive memory systems may be utilized to implement neuro-inspired learning algorithms with full parallelism. In one embodiment, a resistive memory system includes a cross point resistive network and switchable paths. The cross point resistive network includes variable resistive elements and conductive lines. The conductive lines are coupled to the variable resistive elements such that the conductive lines and the variable resistive elements form the cross point resistive network. The switchable paths are connected to the conductive lines so that the switchable paths are operable to selectively interconnect groups of the conductive lines such that subsets of the variable resistive elements each provide a combined variable conductance. With multiple resistive elements in the subsets, process variations in the conductances of the resistive elements average out.

Abstract: An internal voltage generation circuit includes a bulk voltage generator and an internal voltage driver. The A bulk voltage generator is configured to output any one of a power supply voltage signal and a core voltage signal as a first bulk voltage signal and any one of a ground voltage signal and a low voltage signal as a second bulk voltage signal. An internal voltage driver receives the first and second bulk voltage signals to pull down an internal voltage signal when a level of the internal voltage signal is higher than a level of an upper limit reference voltage signal and to pull up the internal voltage signal when a level of the internal voltage signal is lower than a level of a lower limit reference voltage signal.

Abstract: A memory device may include a pre-charge control circuit, an active control circuit, and a driver circuit. The pre-charge control circuit may be configured to receive an active command after receiving a pre-charge command for a first bank, determine whether or not a pre-charge operation for the first bank has ended when receiving the active command, and generate an active instruction signal according to a result of the determination. The active control circuit may be configured to generate an active control signal for an active operation according to the active instruction signal. The driver circuit may be configured to control an active operation according to the active control signal.

Abstract: A precharge control signal generator and a semiconductor memory device include a precharge control signal generating circuit which generates a precharge control signal and applies the precharge control signal to a sensing circuit, and a sensing circuit configured to precharge a bit line connected to a memory cell according to the precharge control signal and read data stored in the memory cell. The precharge control signal controls the sensing circuit so that a precharge time is adjusted according to operating temperature.

Abstract: Methods for sensing, method for programming, memory devices, and memory systems are disclosed. In one such method for sensing, a counting circuit generates a count output and a translated count output. The count output is converted into a time varying voltage that biases a word line coupled to memory cells being sensed. Target data for each memory cell is stored in a data cache associated with that particular memory cell. When it is detected that a memory cell has turned on, the translated count output associated with the count output that is indicative of the voltage level that turned on the memory cell is compared to the target data. The comparison determines the state of the memory cell.

Abstract: A memory device includes a plurality of sense amplifiers coupled with an array of memory cells, a plurality of output data lines receiving outputs of corresponding sense amplifiers, and a plurality of precharge circuits configured to apply a precharge voltage on the output data lines. A controller provides control signals to the sense amplifiers and to the precharge circuits, including to cause the precharge circuits to precharge the output data lines before the sense amplifiers drive output data signals to the output data lines. The plurality of sense amplifiers includes banks of sense amplifiers, and each bank includes a sense amplifier having an output driving each output data line. The memory device includes data output multiplexers having inputs coupled to the output data lines, and the precharge circuits are coupled to the output data lines between outputs of the sense amplifiers and the data output multiplexers.

Abstract: A top-emission type light emitting display device and a corresponding manufacturing method are described. A device substrate has display area and non-display areas. In the display area are formed: a thin film transistor including an active layer, a gate electrode, a source electrode, and a drain electrode; and an organic light emitting element including an anode, an organic light emitting layer, and a cathode. In the non-display area a second voltage supply wire is formed on, and overlaps with, a first voltage supply wire. An anti-burning layer is disposed between the first voltage and the second voltage supply wires. The anti-burning layer is an insulation layer with the same thickness as a space sufficient to suppress burning of the wires in the overlapping region between the first voltage supply wire and the second voltage supply wire, thus improving reliability and manufacturing yield of the device.

Abstract: An integrated circuit (IC) includes a digital-to-analog converter (DAC), a voltage monitoring circuit, and a controller. The voltage monitoring circuit includes low voltage detect (LVD) and low voltage warning (LVW) circuits that generate LVD and LVW reference voltage signals. The controller generates and stores a voltage margin word (a difference between first and second DAC words that correspond to the LVD and LVW reference voltage signals, respectively). The controller compares the voltage margin word with predetermined maximum and minimum voltage margin words. If the voltage margin word does not lie between the predetermined maximum and minimum voltage margin words, the controller generates a voltage trimming signal that scales the LVW reference voltage signal. After scaling, if the voltage margin word lies between the predetermined maximum and minimum voltage margin words, the controller generates a calibration pass signal, otherwise the controller generates a calibration fail signal.

Abstract: A memory system includes a memory controller coupled to multiple memory devices. Each memory device includes an oscillator that generates an internal reference signal that oscillates at a frequency that is a function of physical device structures within the memory device. The frequencies of the internal reference signals are thus device specific. Each memory device develops a shared reference signal from its internal reference signal and communicates the shared reference signal to the common memory controller. The memory controller uses the shared reference signals to recover device-specific frequency information from each memory device, and then communicates with each memory device at a frequency compatible with the corresponding internal reference signal.

Abstract: A semiconductor device may include memory blocks having a plurality of strings including drain select transistors and memory cells electrically coupled in series between a bit line and a pipe transistor and source select transistors and memory cells electrically coupled in series between a common source line and the pipe transistor; a circuit group configured to float drain select lines electrically coupled to the drain select transistors included in unselected memory blocks and source select lines electrically coupled to the source select transistors included in the unselected memory blocks and to ground a pipe line electrically coupled to the pipe transistor when a program operation of a selected memory block among the memory blocks is performed; and a control circuit configured to control the circuit group.

Abstract: Radio frequency (RF) switching circuitry includes support circuitry for maintaining one or more RF switching elements in either an ON or OFF state. The support circuitry includes a negative charge pump adapted to quickly generate a negative voltage during a “boost” mode of operation, and maintain the negative voltage during a normal mode of operation. The negative charge pump includes an oscillator adapted to generate a high frequency oscillating signal for driving the charge pump during the boost mode of operation and a low frequency oscillating signal for driving the charge pump during the normal mode of operation. By generating the high frequency oscillating signal only during a boost mode of operation, spurious noise coupled to the RF switch circuitry is minimized during a normal mode of operation.

Abstract: The semiconductor device incorporates a selected sub word line driver and a first voltage switching circuit. The selected sub word line driver has an input node connected to a selected main word line, an output node connected to a selected sub word line, a reference node supplied with a common reference voltage, and a power node. The first voltage switching circuit selectively supplies a first power voltage, a second power voltage, or the common reference voltage to the power node of the selected sub word line driver. In an active mode, the first voltage switching circuit supplies the first power voltage to pull the selected sub word line to a logic high level. In a precharge mode, the first voltage switching circuit supplies the common reference voltage and then supplies the second power voltage, thereby pulling the selected sub word line to a logic low level. A voltage level of the second power supply node is lower than a voltage level of the first power voltage and higher than the common reference voltage.

Abstract: A semiconductor integrated circuit which can respond to changes of the amount of retained data at the time of standby is provided. The semiconductor integrated circuit comprises a logic circuit (logic) and plural SRAM modules. The plural SRAM modules perform power control independently of the logic circuit, and an independent power control is performed among the plural SRAM modules. Specifically, one terminal and the other terminal of a potential control circuit of each SRAM module are coupled to a cell array and a local power line, respectively. The local power line of one SRAM module and the local power line of the other SRAM module share a shared local power line. A power switch of one SRAM module and a power switch of the other SRAM module are coupled in common to the shared local power line.

Abstract: A memory control circuit includes a comparator, an eye width measuring circuit and a calibration circuit, wherein the comparator is arranged to compare a data signal with a reference voltage to generate a compared data signal; the eye width measuring circuit is coupled to the comparator, and is arranged to measure an eye width of the compared data signal to generate a measuring result; and the calibration circuit is coupled to the comparator and the eye width measuring circuit, and is arranged to adjust a level of the reference voltage according to the measuring result.

Abstract: A semiconductor device capable of generating a signal (e.g., a potential signal or a current signal) suitable for usage environment or a purpose. The semiconductor device includes a first memory circuit, a first circuit, and a second memory circuit. The first circuit converts a digital signal input from the first memory circuit into an analog signal. The first memory circuit includes an input node, an output node, a transistor, and a capacitor. The capacitor is electrically connected to the output node. The transistor can control a conduction state between the input node and the output node. An analog signal is input to the input node from the first circuit. The transistor includes an oxide semiconductor layer where a channel formation region is formed.