Abstract: A semiconductor memory device including a clock input for receiving a source clock and supplying a generated clock to a plurality of clock transmission lines; a plurality of clock amplifiers, each amplifying a respective generated clock loaded on one of the plurality of clock transmission lines in response to a column enable signal; and a data input/output for inputting/outputting a plurality of data in response to the amplified clocks output by the plurality of clock amplifiers.

Abstract: Methods of operating a memory device and memory devices are provided. For example, a method of operating a memory array is provided that includes a synchronous path and an asynchronous path. A Write-with-Autoprecharge signal is provided to the synchronous path, and various bank address signals are provided to the asynchronous path. In another embodiment, the initiation of the bank address signals may be provided asynchronously to the assertion of the Write-with-Autoprecharge signal.

Abstract: A method for dynamically enabling address receivers in a synchronous memory array includes: controlling all address receivers to initially be in an off state; generating a command signal and generating an address signal; delaying the address signal so there is a latency between the command signal and the address signal; and selectively turning on an address receiver corresponding to the address signal when the command signal is received by the synchronous memory array.

Abstract: Semiconductor memory device and method for operating the same includes a data output unit configured to output data in synchronization with a data output clock and a clock control unit configured to selectively transfer the data output clock to the data output unit under the control of a read command.

Abstract: A method is disclosed for operating a memory device, including providing a timing signal comprising a plurality of clock cycles, providing an activate signal, and providing a bank address signal. An activate command executes on every first duration of clock cycles, and the bank address signal is high for at least a portion of the first duration of clock cycles. In one embodiment, the first duration of the activate signal is at least four clock cycles, and the bank address signal is at least one clock cycle. A memory device having a row decoder and an active driver is also provided.

Abstract: A circuit is configured to be mounted on a memory module connectable to a computer system so as to be electrically coupled to a plurality of memory devices on the memory module. The memory module has a first number of ranks of double-data-rate (DDR) memory devices activated by a first number of chip-select signals. The circuit is configurable to receive bank address signals, a second number of chip-select signals, and row/column address signals from the computer system. The circuit is further configurable to generate phase-locked clock signals in response to clock signals received from the computer system and to provide the first number of chip-select signals to the first number of ranks in response to the phase-locked clock signals, the received bank address signals, the received second number of chip-select signals, and at least one of the received row/column address signals.

Abstract: A chip system that has reduced power consumption under specific operational modes includes: a DDR3 chip that includes: a plurality of pads, disposed at the centre of the DDR3 chip; and an array of banks, each bank having a specific logical address, surrounding the pads. The chip system further includes: a clock, coupled to the DDR3 chip, for controlling a rate of data transmission; and a memory controller, coupled to the clock, for coordinating transmitted data with relevant processes, and for selectively reassigning the bank logical addresses according to a specific operational mode.

Abstract: A circuit is configured to be mounted on a memory module connectable to a computer system so as to be electrically coupled to a plurality of memory devices on the memory module. The memory module has a first number of ranks of double-data-rate (DDR) memory devices activated by a first number of chip-select signals. The circuit is configurable to receive bank address signals, a second number of chip-select signals, and row/column address signals from the computer system. The circuit is further configurable to generate phase-locked clock signals in response to clock signals received from the computer system, to selectively isolate one or more loads of the first number of ranks from the computer system, and to translate between a system memory domain and a physical memory domain of the memory module.

Abstract: Timing delays in a double data rate (DDR) dynamic random access memory (DRAM) controller (114, 116) are trained. A left edge of passing receive enable delay values is determined (530). A final value of a receive data strobe delay value and a final value of a transmit data delay value are trained (540). A right edge of passing receive enable delay values is determined using a working value of the receive data strobe delay (550); and a final receive enable delay value intermediate between the left edge of passing receive enable delay values and the right edge of passing receive enable delay values is set (560).

Abstract: A circuit is configured to be mounted on a memory module connectable to a computer system so as to be electrically coupled to a plurality of memory devices on the memory module. The memory module has a first number of ranks of double-data-rate (DDR) memory devices activated by a first number of chip-select signals. The circuit is configurable to receive bank address signals, a second number of chip-select signals, and row/column address signals from the computer system. The circuit is further configurable to generate phase-locked clock signals in response to clock signals received from the computer system, to selectively isolate one or more loads of the first number of ranks from the computer system, and to translate between a system memory domain and a physical memory domain of the memory module.

Abstract: An efficient implementation of a digital delay locked loop (DLL) circuit is disclosed. The delay locked loop (DLL) circuit includes a phase detector circuit, a clock divider circuit, a delay, a delay control finite state machine (FSM) and an output low pass filter. The delay includes a coarse delay line and a fine delay line. The coarse delay line delays a signal by a fixed large amount and the fine delay line introduces a smaller precise delay. The delay control FSM adjusts the delay to keep the output signal of the DLL synchronized with the input. The adjustment is averaged over a range of cycle periods in order to avoid adjusting the edges of signal waveform constantly. The low pass filter at the output minimizes the jitter in the output signal.

Abstract: In a DDR memory controller, a clock control circuit is configured to output a clock signal selected from among a plurality of clock signals with different frequencies based on a frequency selection signal, to a DDR memory as an operation clock signal. A master DLL circuit is configured to receive one of the plurality of clock signals which has a maximum frequency as a reference clock signal to determine a delay code. A slave delay circuit is configured to delay a strobe signal from the DDR memory based on the determined delay code to generate an internal strobe signal for a data signal from the DDR memory.

Abstract: A semiconductor integrated circuit (100) fetches read data from DDR-SDRAMs (110, 120) each operating in synchronization with a clock, and transfers the read data. The semiconductor integrated circuit (100) includes read buffers (104, 105) for fetching the read data from the DDR-SDRAMs (110, 120), and transferring the read data, latch timing control circuits (102, 103) for controlling respective latch timings with which the read buffers (104, 105) fetch the read data from the DDR-SDRAMs (110, 120) based on respective data strobe signals from the DDR-SDRAMs (110, 120), and a read timing control circuit (106) for controlling respective read timings with which the read buffers (104, 105) transfer the read data based on the latch timings of the latch timing control circuits (102, 103).

Abstract: Systems and methods for reading data from or writing data to a memory device. The methods involve receiving a first pulse signal having a first pulse frequency at the memory device. The methods also involve generating, at the memory device, a second pulse signal using the first pulse signal. The second pulse signal is a compliment of the first pulse signal. The second pulse signal has a second pulse frequency that is equal to the first frequency. The first pulse signal is used to control first read/write operations so that first data is output from or input to the memory device at a first data rate. The first and second pulse signals are used to control second read/write operations so that second data is output from or input to the memory device at a second data rate. The second data rate is twice the first data rate.

Abstract: Some embodiments include a delay line configured to apply a delay to an input signal to provide an output signal; an input circuit configured to provide the input signal based on a first signal, such that the cycle time of the input signal is different from a cycle time of the first signal; an output circuit configured to provide a second signal based on the output signal, the second signal having a cycle time different from a cycle time of the output signal; and a controller configured to adjust the delay to control a timing relationship between the first signal and the second signal. Other embodiments are described and claimed.

Abstract: A data capture circuit includes strobes that track input data even when conditions arise that cause the differences in skew from interpreting data state ones and zeros. This is accomplished whether these skews arise from reference voltage variation, data pattern loading, power supply droop, process variations within the chip itself, or other causes. The differential input strobes of the data capture circuit are input into individual input buffers, each compared against a reference voltage individually, as well as a data input pin. The outputs from these buffers are maintained separate from each other all the way to the point where the input data is latched. In latching the input data, data ones are latched entirely based on input signals derived from a rising edge (both strobes and data), and zeros are latched entirely based on input signals derived from a falling edge (both strobes and data).

Abstract: An interface for use of device whose core circuitry operates in one voltage domain, but exchanges signal with another device (or “host”) according a different voltage domain, and the use of such an interface for supplying data using a double data rate (DDR) transfer, is presented. One concrete example of this situation is a memory card, where the internal circuitry uses one voltage range for its core operating voltages, but exchanges signals with a host using different, input/output voltage range. According to a general set of aspects, the interface receives data signals from the device at the device's core operating voltage domain, individually level shifts these to the input/output voltage domain, and then combines them into a DDR signal for transfer to the host device, where a (non-level shifted) clock signal from the host device is used as the select signal to form the DDR data signal.

Abstract: A semiconductor memory device includes a clock inputting unit configured to receive a system clock and a data clock, a clock dividing unit configured to divide a frequency of the data clock to generate a data division clock and determining a phase of the data division clock according to a division control signal, a phase dividing unit configured to generate a plurality of multiple-phase data division clocks each having a predetermined phase difference according to the data division clock, and a first phase detecting unit configured to detect a phase of the system clock based on a predetermined selection clock among the multiple-phase data division clocks, and generate the division control signal according to the detection result.

Abstract: Circuits for measuring a clock signal include a variable digital delay line that is configured to delay the clock signal by variable amounts in response to variable values of a digital control word that are applied thereto, to produce a variably delayed clock signal. A capture stage is responsive to the variably delayed clock signal and to the clock signal to capture a logic state of the variably delayed clock signal during transitions of the clock signal. A controller is configured to generate the variable values of the digital control word that are applied to the variable digital delay line and to identify a value of the digital control word in response to the capture stage capturing a change in the logic state of the variably delayed clock signal during a transition of the clock signal. Related methods and memory devices are also described.

Abstract: A circuit is configured to be mounted on a memory module so as to be electrically coupled to a plurality of double-data-rate (DDR) memory devices arranged in one or more ranks on the memory module. The circuit includes a logic element, a register, and a phase-lock loop device. The circuit is configurable to respond to a set of input signals from a computer system to selectively isolate one or more loads of the plurality of DDR memory devices from the computer system and to translate between a system memory domain of the computer system and a physical memory domain of the plurality of DDR memory devices.

Abstract: A memory control method for adjusting sampling points utilized by a memory control circuit receiving a data signal and an original data strobe signal of a memory includes: utilizing at least one delay unit to provide a plurality of sampling points according to the original data strobe signal; sampling according to the data signal by utilizing the plurality of sampling points; and analyzing sampling results to dynamically determine a delay amount for delaying the original data strobe signal, whereby a sampling point corresponding to the delayed data strobe signal is kept centered at data carried by the data signal.

Abstract: In one embodiment of the invention, a memory integrated circuit is provided including a memory array, a register, and control logic coupled to the register. The memory array in the memory integrated circuit stores data. The register includes one or more bit storage circuits to store one or more identity bits of an identity value. The control logic provides independent sub-channel memory access into the memory integrated circuit in response to the one or more identity bits stored in the register.

Abstract: A circuit is configured to be mounted on a memory module connectable to a computer system so as to be electrically coupled to a plurality of memory devices on the memory module. The plurality of memory devices has a first number of memory devices. The circuit comprises a logic element configurable to receive a set of input signals from the computer system. The circuit further comprising a register and a phase-lock loop circuit, the phase-lock loop circuit configurable to be operatively coupled to the plurality of memory devices, the logic element, and the register. The set of input signals corresponds to a second number of memory devices smaller than the first number of memory devices.

Abstract: A method, device, and system are disclosed. In one embodiment, the method includes programming a first On Die Termination (ODT) value into a first plurality of dynamic random access memory (DRAM) devices. The first plurality of DRAM devices are located on a dual inline memory module (DIMM). Additionally, the method also includes programming a second ODT value into a second plurality of additional DRAM devices. The second plurality of additional DRAM devices are also located on the DIMM. The method also specifies that the first and second ODT values are not the same value.

Abstract: A memory interface subsystem including a write logic and a read logic. The write logic may be configured to communicate data from a memory controller to a memory. The read logic may be configured to communicate data from the memory to the memory controller. The read logic may comprise a plurality of physical read datapaths. Each of the physical read datapaths may be configured to receive (i) a respective portion of read data signals from the memory, (ii) a respective read data strobe signal associated with the respective portion of the received read data signals, (iii) a gating signal, (iv) a base delay signal and (v) an offset delay signal.

Abstract: An interface circuit includes a delay circuit that generates a delay signal obtained by delaying a data strobe signal, a first logical circuit that performs a logical operation of on the data strobe signal and the delay signal, and outputs an operation result as a first strobe signal, a second logical circuit that receives the first strobe signal and generates a second strobe signal that is complementary to the first strobe signal; a first latch circuit that latches a data signal based on the first strobe signal, and a second latch circuit that latches the data signal based on the second strobe signal.

Abstract: A dual data rate (DDR) memory controller and method are provided. The method includes: receiving a first data strobe at a first terminal from a first memory having a first rank; receiving a first data signal at a second terminal from the first memory having the first rank; calibrating the first data signal with the first data strobe to produce a first calibration value; receiving a second data strobe at the first terminal from a second memory having a second rank; receiving a second data signal at the second terminal from the second memory having the second rank; calibrating the second data signal with the second data strobe to produce a second calibration value; determining a final calibration value using the first and second calibration values; and using the final calibration value to time the first data signal and the second data signal during a read operation of the memories.

Abstract: A semiconductor memory device using system clock with a high frequency can maintain a constant margin of operation even with a changed operating environment including voltage level, temperature, and process. The semiconductor memory device includes a data output control circuit configured to control data outputted in synchronization with a falling edge of a system clock using a first output source signal corresponding to a rising edge of the system clock, and to control data outputted in synchronization with the rising edge of the system clock using a second output source signal corresponding to a falling edge of the system clock, and a data output circuit configured to output data, the data output circuit being controlled by the data output control circuit.

Abstract: An output enable signal generating circuit including a first count value generation unit that provides a first count value by executing a counting operation, starting from an initial count value corresponding to a CAS latency information, the counting operation being executed in response to an internal clock signal, a second count value generation unit that provides a second count value that is counted in response to an external clock signal and an output enable signal generation unit for generating an output enable signal that is activated at every timing when the second count value and the first count value become equal to each other, in response to each of a plurality of read commands.

Abstract: A computer system for writing data to a memory is disclosed. The memory controller in the computer system comprises a system clock, which is generated by the memory controller. A first register captures the lower data word based on the rising edge of the system clock. A second register, coupled to the first register, captures the output of the first register based on the rising edge of the system clock. A third register, captures the upper data word based on the falling edge of the system clock. A forth register, coupled to the third register, captures the output of the third register based on the falling edge of the system clock. A first multiplexer is coupled to a forth register and a second register. A delay element, coupled to the system clock and a first multiplexer, adjusts the phase of the system clock. A second multiplexer, coupled to the system clock, generates a data strobe.

Abstract: The present invention relates to a double data rate interface and method for use between a processor and random access memory, comprising a delay line including means for creating a delay in a data strobe signal from the random access memory, the delay line being arranged such that the delay in the data strobe signal is equal to the sum of set-up time and data bus rise time. The interface of includes the delay line comprising the delay locked loop which in turn comprises a ring oscillator. The ring oscillator includes a buffer and a Vernier delay.

Abstract: A mode-register reading controller includes a switching signal generator, first and second transmitters, and a control signal generator. The switching signal generator generates a switching signal that is activated when the reset command is input during a mode-register reading operation. The first transmitter buffers and transfers the mode-register read signal in response to the switching signal. The second transmitter, in response to the switching signal, delays and transfers the enable signal at a predetermined delay time. The control signal generator receives a signal from one of the first and second transmitters and generates a first control signal and a second control signal for transferring the data into a data output buffer from the input/output line.

Abstract: A solid state non-volatile memory unit. The memory unit includes a multi-level solid state non-volatile memory array adapted to store data characterized by a first number of digital levels. The memory unit also includes an analog-to-digital converter having an input and an output. The input of the analog-to-digital converter is adapted to receive data from the multi-level solid state non-volatile memory array. The output of the analog-to-digital converter is adapted to output a digital signal characterized by a second number of digital levels greater than the first number of digital levels.

Abstract: Apparatus and systems for improved PVT invariant fast rank switching in a DDR3 memory subsystem. A clock skew control circuit is provided between a memory controller and a DDR3 SDRAM memory subsystem to adjust skew between the DDR3 clock signal and data related signals (e.g., DQ and/or DQS). A initial write-leveling procedure determines the correct skew and programs a register file in the skew adjustment circuit. The register file includes a register for each of multiple ranks in the DDR3 memory. The values in each register serve to control selection of alignment of the data related signals to align with one of multiple phase shifted versions of a 1× DDR3 clock signal. The phase shifted clock signals are generated by clock divider circuits from a 2× DDR clock signal and use of a single fixed delay line approximating ? of a 1× DDR3 clock period.

Abstract: A method of managing power states of memory modules while performing memory access operations is disclosed. Memory modules are in a power saving state until an access operation involving the module is to be performed. The module is placed in an operational mode, then the access operation is performed, then the module is returned to the power saving state. Apparatus and systems using the method are also disclosed and claimed.

Abstract: An exemplary motherboard includes a driving module, a first slot module arranged for mounting a first type of memory and connected to the driving module via a first channel, a second slot module arranged for mounting a second type of memory and connected to the driving module via a second channel, and a voltage regulator electronically connected to the first slot module and the second slot module. The first memory and the second memory are alternatively mounted on the motherboard, the voltage regulator detects which type memory is currently mounted on the motherboard and outputs voltages suitable for the type of the memory mounted on the motherboard accordingly.

Abstract: A semiconductor memory device is capable of generating a desired output enable signal without increasing an initial count value and bit number and generating a desired final output enable signal, without unnecessary reset operations, by reflecting column address strobe (CAS) latency information on an external clock count value. The semiconductor memory device includes a first output enable signal generating unit and a final output enable signal generating unit. The first output enable signal generating unit is configured to compare a first count value, which is obtained by counting a delay locked loop (DLL) clock, to a second clock count value, which is obtained by counting an external clock until a read command is input, and to output a first output enable signal. The final output enable signal generating unit is configured to output a final output enable signal generated by shifting the first output enable signal, according to CAS latency.

Abstract: An exemplary motherboard includes a driving module, at least two first slots arranged for mounting two first type of memories, at least two second slots arranged for mounting two second type of memories, and a voltage regulator. The driving module is electronically connected to the at least two first slots, the at least two second slots, and the voltage regulator in turn via a channel. The first type of memories and the second type of memories are alternatively mounted on the motherboard, the voltage regulator detects which type memory is currently mounted on the motherboard and outputs voltages suitable for the type of memory mounted on the motherboard accordingly.

Abstract: An invention is provided for determining write leveling delay for a plurality of memory devices having command signals lines connected in series to each memory device is disclosed. The invention includes determining a device delay value for each memory device. Each device delay value indicates a period of time to delay a DQS signal when accessing a related memory device. Once these delay values are determined, the delay values are examined sequentially and a prior device delay value is set to a lower value, for example zero, when a subsequent device delay value of a memory device connected subsequently along the command signal lines is greater than the prior device delay value.

Abstract: Apparatuses and methods for dual channel memory architecture with reduced interface pin requirements are presented. One memory architecture includes a memory controller, a first memory device coupled to the memory controller by a shared address bus and a first clock signal, and a second memory device coupled to the memory controller by the shared address bus and a second clock signal, where the polarity of the second clock signal is opposite of the first clock signal. A method for performing data transactions is presented. The method includes providing addressing signals over a shared address bus to a first memory device and a second memory device, providing clock signals to the memory devices which are reversed in polarity, where the clock signals are derived from a common clock signal, and transferring data to the memory devices over separate narrow data buses in an alternating manner based upon the clock signals.

Abstract: A memory controller provided according to an aspect of the present invention uses a slower clock signal during write leveling compared to when performing write operations thereafter. Due to such use of a slower clock signal, the various desired delays can be determined accurately and/or easily. In an embodiment, the frequency of the slower clock signal is determined based on the maximum fly-by delay (generally the delay between sending of a signal on the shared sequential path and the receipt at the memory unit in the sequence) that may be present in the memory system. For example, if the fly by delay can be M (an integer) times the time period of the clock signal during normal write operations, the slower clock signal may have a time period of M times that of the clock signal during write operation.

Abstract: An exemplary motherboard includes a first slot arranged for mounting a first type of memory, a second slot arranged for mounting a second type of memory, a voltage regulator electronically connected to the first slot and the second slot, and a serial presence detect (SPD) unit connected to the voltage regulator. The first memory and the second memory alternatively mounted on the motherboard, the SPD detects which type of memory is mounted on the motherboard, and the voltage regulator outputs voltages suitable for the type of the memory mounted on the motherboard according to a detection result of the SPD.

Abstract: Within a programmable logic device, a multi-data rate SDRAM interface such as a DDR SDRAM interface includes in one embodiment a DQS clock tree, a slave delay circuit, and a delay-locked loop (DLL). The slave delay circuit is adapted to shift the phase of the DQS signal relative to the phase of data to provide a phase-shifted DQS signal to the DQS clock tree, and the DLL is adapted to control the slave delay circuit. The DLL includes a delay line comprising a plurality of instantiations of the slave delay circuit and a plurality of facsimiles of the DQS clock tree.

Abstract: A column decoder includes: a plurality of main decoding units coupled to different memory banks that decode a pre-decoding signal and output column selection signals to the corresponding memory banks; and one or more pre-decoders, having a lesser number than the main decoders, which generates and outputs the pre-decoding signal by decoding the column address and the bank information signal.

Abstract: A semiconductor memory device comprises an address terminal through which an address for reading out stored data in a memory array is input, a clock input terminal through which an input clock is input, a data output terminal through which data read out from the memory array in accordance with the address is output, and a clock output terminal through which an output clock synchronous with the input clock is output. The clock output terminal invariably outputs one of a first voltage and a second voltage. Only when valid data is output from the data output terminal, the clock output terminal causes an output voltage to go from the first voltage to the second voltage or from one voltage to the other voltage.

Abstract: A memory control method for adjusting deglitch windows utilized by a memory control circuit receiving an original data strobe signal of a memory includes: deglitching according to the original data strobe signal by utilizing a plurality of deglitch windows that are set by delaying an original deglitch window signal in order to derive a plurality of deglitch results, where the deglitch windows have different beginning time points; and utilizing the deglitch results to dynamically determine a delay amount for delaying the original deglitch window signal, where the beginning time point of one of the deglitch windows is kept centered at a middle time point of a preamble of the original data strobe signal.

Abstract: A semiconductor memory device includes an aligning signal generator, a data aligning unit, a data transmitting controller and a data transmitter. The aligning signal generator receives a data strobe signal to output aligning signals. The data aligning unit aligns a plurality of data pieces input in succession in response to the aligning signals. The data transmitting controller generates a data transmitting signal synchronized with the transition of the aligning signal. The data transmitter transmits an aligned data output from the data aligning unit to a data storage area in response to the data transmitting signal. A method for driving the semiconductor memory device includes aligning data pieces input in succession as parallel data in response to a data strobe signal, generating a data transmitting signal corresponding to transition of the data strobe signal and transmitting the parallel data to a data storage area in response to the data transmitting signal.

Abstract: A semiconductor module includes a first semiconductor device, a second semiconductor device and a reference voltage supplying circuit. The first semiconductor device includes a first electrode. The second semiconductor device includes a second electrode. The reference voltage supplying circuit is for supplying a reference potential to the first electrode and the second electrode and for suppressing a noise to be transferred between the first electrode and the second electrode.

Abstract: The present invention discloses a circuit for generating a data strobe signal in a DDR memory device and a method therefor which can precisely distinguish preamble and postamble periods of the data strobe signal by generating pulses for generating the data strobe signal only in a data strobe signal input period by using an internal clock signal according to CAS latency under a read command, and generating the data strobe signal by using the pulses, and which can improve reliability of the circuit operation by precisely controlling operation timing with the internal clock signal.

Abstract: Disclosed is a double data rate (DDR) input block comprising first and second input registers corresponding to a DDR input of the DDR input block. The first and second input registers are coupled to the DDR input. The DDR input block is configured to load a first data into the first input register and a second data into the second input register during a single clock cycle of a system clock, thereby operating at double data input during a single clock cycle. A single data rate/double data rate (SDR/DDR) input block may be operated in either SDR or DDR mode. The DDR input block may he used with a scannable output reduction block. The DDR input block may be used in systems utilizing a content addressable memory (CAM) or a random access memory (RAM), or other types of memory devices.