Abstract: A test apparatus for testing electrical parameters of a target chip includes: a function generator; a switch matrix module; a plurality of source measurement units (SMUs); at least one of the SMUs is configured to provide power supply for the target chip; at least one of the SMUs is coupled to the switch matrix module; and at least two of said SMUs are test SMUs coupled to ports of the target chip and the function generator.

Abstract: A static random-access memory is set forth comprising: a word line circuit for generating a word line signal on a word line; a plurality of six-transistor memory cells arranged between a first bitline, a second bitline and the word line for simultaneously selecting one of either all or a portion of the plurality of six-transistor memory cells for data reading or writing, and wherein each memory cell includes first and second n-channel transistors and a bitline precharge circuit for precharging the first bitline and second bitline to a voltage of Vdd/2 prior to the first and second n-channel transistors receiving the word line signal.

Abstract: A memory device includes memory banks that each has multiple rows with row addresses. The memory device also includes a counter that stores and increments a first row address of a first row of a first set of memory banks to a second row address of a second row of the first set of memory banks in response to a first refresh operation when the memory device is operating in a first mode. The memory device further includes circuitry that blocks incrementing the second row address to a third row address of a third row of the first set of memory banks when the memory device transitions from the first mode to a second mode and the first refresh operation is not paired with a second refresh operation that is performed when the memory device is operating in the first mode.

Abstract: An integrated circuit includes multiple memory cells, a first pair of complementary data lines, a second pair of complementary data lines, multiple first word lines, and multiple second word lines. The memory cells include a first array of memory cells and a second array of memory cells. The first pair of complementary data lines are coupled to the first array of memory cells. The second pair of complementary data lines are coupled to the second array of memory cells. Lengths of the first pair of complementary data lines are shorter than lengths of the second pair of complementary data lines. The first word lines and the second word lines are arranged according to a predetermined ratio of a number of the first word lines to a number of the second word lines. The predetermined ratio is less than 1.

Abstract: A memory architecture for 3-dimensional thyristor cell arrays is disclosed. Thyristor memory cells are connected in a 3-dimensional cross-point array to form a bit line cluster. The bit line clusters are connected in parallel to sense amplifier and write circuits through multiplexer/demultiplexer circuits. Control circuits select one of the bit line clusters during a read or write operation while the non-selected bit line clusters are not activated to avoid disturbs and power consumption in the non-selected bit line clusters. The bit line clusters, multiplexer/demultiplexer circuits, and sense amplifier and write circuits from a memory array tile (MAT).

Abstract: A memory includes: a non-volatile memory suitable for storing a defect address; a register suitable for receiving and storing the defect address from the non-volatile memory during a boot-up operation, and receiving and storing an address that is input from an exterior during a register access operation; a comparison circuit suitable for comparing the address stored in the register with an address that is input from the exterior to produce a comparison result; redundant memory cells that are accessed according to the comparison result of the comparison circuit and a redundancy activation bit; and normal memory cells that are accessed according to the comparison result of the comparison circuit and the redundancy activation bit.

Abstract: A clock detecting circuit is provided. The clock detecting circuit includes a first clock converting circuit, a second clock converting circuit and a frequency comparator. The first clock converting circuit converts an internal clock to a first clock. The second clock converting circuit converts an external clock to a second clock. The frequency comparator generates a first edge clock in response the first clock and generates a second edge clock in response the second clock. The frequency comparator generates a first sensing voltage in response to a plurality of positive pulses of the first edge clock and generate a second sensing voltage in response to a plurality of positive pulses of the second edge clock. The frequency comparator compares the first sensing voltage and the second sensing voltage to provide a frequency comparing result between the external clock and the internal clock.

Abstract: An arbitration control circuit in a pseudo-static random access memory (PSRAM) device includes a first arbiter circuit and a second arbiter circuit. The first arbiter circuit receives a normal access request signal and a refresh access request signal and generates a first output signal in response to a logical operation to arbitrate between the normal access reqeuest signal and the refresh access request signal. The second arbiter circuit configured to receive the first output signal and a delayed signal of the first output signal, and to generate a second output signal in response to a logical operation of the first output signal and the delayed signal. The second output signal has a first logical state indicative of granting the read or write access request and a second logical state indicative of granting the refresh access request to the memory cells of the PSRAM device.

Abstract: A memory circuit includes a plurality of word lines, a word line driver coupled to the plurality of word lines, and a booster circuit coupled to the plurality of word lines. The word line driver is configured to output a first word line signal on a first word line of the plurality of word lines, and the booster circuit includes a first node configured to carry a first power supply voltage and is configured to couple the first word line of the plurality of word lines to the first node responsive to a pulse signal and the first word line signal.

Abstract: Devices and methods are provided for word line pulse width control for a static random access memory (SRAM) devices. A control circuit includes a first transistor, an inverter coupled to the first transistor, and a second transistor comprising a gate, a first source/drain terminal and a second source/drain terminal. The second transistor is coupled to the inverter. The first source/drain terminal of the second transistor is coupled in series to the first transistor. The second source/drain terminal is coupled to a decoder driver circuit. The second transistor is configured to charge a load of a common decoder line so as to reduce an effective load of the decoder driver circuit.

Abstract: Systems and methods are provided for controlling a wake-up operation of a memory circuit. The memory circuit is configured to precharge the bit lines of a memory array sequentially during wakeup. A sleep signal is received by the first bit line of a memory cell and then a designed delay occurs prior to the precharge of a second complementary bit line. The sleep signal may then precharge the bit lines of a second memory cell with further delay between the precharge of each bit line. The memory circuit is configured to precharge both bit lines of a memory cell at the same time when an operation associated with that cell is designated.

Abstract: A memory circuit includes a first word line, a first and second bit line, a first and second inverter, a P-type pass gate transistor and a pre-charge circuit. The first word line extends in a first direction. The first and second bit line extend in a second direction. The first inverter has a first storage node coupled to the second inverter. The second inverter has a second storage node coupled to the first inverter, and is not coupled to the second bit line. The P-type pass gate transistor is coupled between the first storage node and the first bit line. The pre-charge circuit is coupled to the first or second bit line, and is configured to charge the first or second bit line to a pre-charge voltage responsive to a first signal. The pre-charge voltage is between a voltage of a first logical level and a second logical level.

Abstract: Methods, systems, and devices for timing signal delay compensation in a memory device are described. In some memory devices, operations for accessing memory cells may be performed with timing that is asynchronous relative to an input signal. To support asynchronous timing, a memory device may include delay components that support generating a timing signal having aspects that are delayed relative to an input signal. In accordance with examples as disclosed herein, a memory device may include delay components having a variable and configurable impedance, where the configurable impedance may be based at least in part on a configuration signal generated at the memory device. A configuration signal may be generated based on fabrication characteristics of the memory device, or based on operating conditions of the memory device, or various combinations thereof.

Abstract: A first operating characteristic and a second operating characteristic of a memory sub-system are determined. A write-to-read delay time is set in view of the first operating characteristic and the second operating characteristic. A read operation associated with a memory unit is executed following a period of at least the write-to-read delay time from a time of an execution of a write operation associated with the memory unit.

Abstract: According to the embodiment, in a first period, the semiconductor storage device maintains the switch in an ON state. In a second period, the semiconductor storage device performs a first operation, a second operation and a third operation while maintaining the switch in an OFF state. The second period is a period after the first period. The first operation is an operation to supply the first pulse having the first polarity from the first pulse generation circuit to the other end of the first capacitive element. The second operation is an operation to supply the second pulse having the second polarity from the second pulse generation circuit to the other end of the second capacitive element. The third operation is an operation to connect the first bit line to the first data line.

Abstract: An encoder includes an encoding unit configured to receive 2n-bit read data and to generate 2m-bit read data, and an output driver configured to input m-bit first read data of the 2m-bit read data, to transmit voltage and/or current a first number of times corresponding to a number of first bits indicating a first state included in the m-bit first read data or to transmit current corresponding to the number of first bits during an activation period of a clock signal, and to transmit the voltage and/or the current a second number of times corresponding to a number of second bits indicating the first state included in m-bit second read data of the 2m-bit read data or to transmit current corresponding to the number of second bits during a deactivation period of the clock signal, wherein n is at least 2 and m is at least 3.

Abstract: Disclosed are a test method for self-refresh frequency of a memory array and a memory array test device. The test method includes: providing a memory array; determining a shortest duration for charge in memory cells of the memory array to leak off, and marking the shortest duration as a first duration; setting an auto-refresh cycle of the memory array according to the first duration, where the auto-refresh cycle is longer than the first duration; performing m tests, where an nth test includes sequentially performing the following: refresh position count resetting, writing preset data to the memory array, performing a self-refresh having a duration of Tn, performing an auto-refresh having a duration of one auto-refresh cycle, reading the memory array, and recording a read status, where Tn?1<Tn, and 2?n?m.

Abstract: An integrated circuit includes a delay circuit and first and second interface circuits. The delay circuit delays a first timing signal by an internal delay to generate an internal timing signal. The first interface circuit communicates data to an external device in response to the internal timing signal. The second interface circuit transmits an external timing signal for capturing the data in the external device. An external delay is added to the external timing signal in the external device to generate a delayed external timing signal. The delay circuit sets the internal delay based on a comparison between the delayed external timing signal and a calibration signal transmitted by the first interface circuit.

Abstract: A circuit includes a selection circuit configured to receive a first address from a first port and a second address from a second port, a first latch circuit coupled to the selection circuit and configured to output each of the first address and the second address received from the selection circuit, a decoder, and a control circuit. The control circuit is configured to generate a plurality of signals configured to cause the decoder to decode each of the first address and the second address.

Abstract: An arbitration control circuit in a pseudo-static random access memory (PSRAM) device includes a set-reset latch circuit receiving a normal access request signal and a refresh access request signal as first and second input signals and generating a first output signal having zero or more signal transitions in response to the order the first input signal and the second input signal is asserted. The arbitration control circuit further includes a unidirectional delay circuit applying a unidirectional delay to the first output signal and a D-flip-flop circuit latching the first output signal as data in response to the delayed signal as clock. The D-flip-flop generates a second output signal having a first logical state indicative of granting the normal access request and a second logical state indicative of granting the refresh access request to the memory cells of the PSRAM device.

Abstract: An electronic device includes a pattern data generation circuit and a data input/output (I/O) circuit. The pattern data generation circuit generates pattern data having a serial pattern based on a command/address signal. The data I/O circuit outputs the pattern data or read data as internal data based on a read command for a read operation and an internal command in a test mode. The data I/O circuit receives and stores the internal data, which are output, as write data for a write operation.

Abstract: An electronic circuit includes a clock signal generator configured to deliver a clock signal. A propagation circuit is configured to propagate the clock signal on a plurality of propagation branches. A number of timers are coupled to at least some of the branches. The timers are clocked by corresponding replicas of the clock signal and configured to generate a pulse signal every N pulses of the corresponding replica of the clock signal. A comparator is configured to generate an alarm signal having a first state when two of the pulse signals are phase-offset with respect to one another.

Abstract: A memory device includes a memory array of memory cells, wordlines and bitlines connected to the memory cells, a first read multiplexor and a second read multiplexor connected to the bitlines, a first sense amplifier connected to the first read multiplexor, a second sense amplifier connected to the second read multiplexor, a first data path connected to the first sense amplifier, and a second data path connected to the second sense amplifier. Each of the memory cells is connected to only one pair of the bitlines and only one of the wordlines. The first read multiplexor is adapted to connect the first sense amplifier to the bitlines during a first portion of a clock cycle and the second read multiplexor is adapted to connect the second sense amplifier to the bitlines during a second portion of a clock cycle that is different from the first portion of the clock cycle.

Abstract: Memory queues described herein use a single hardware and/or software architecture for a memory array. This memory array can be partitioned to be between one memory sub-array to implement a single memory queue and multiple memory sub-arrays to implement multiple memory queues. Various electrical signals provided by or provided to these multiple memory queues include addressing information to associate these various control signals with one or more of the multiple memory sub-arrays. In some situations, the memory queues can externally associate their corresponding read pointers to entries of one of their memory sub-arrays. In these situations, these memory queues can dynamically associate their read pointers to point to any entry from among their memory arrays and to read the data store therein starting from any random entry within their memory arrays.

Abstract: A control circuit and a control method for a pseudo static random access memory are provided. The control circuit counts a number of latch times of data based on an external clock to generate a first count value, counts a number of write times of the data based on an asynchronous column address strobe clock to generate a second count value, and compares the first count value and the second count value. The control circuit provides a column address strobe clock according to the asynchronous column address strobe clock in an asynchronous mode. At the time of a first occurrence of the first count value being equal to the second count value, the control circuit enters a write operation into a synchronous mode from the asynchronous mode to adjust a period of the asynchronous column address strobe clock to a period of the external clock.

Abstract: A clock mode configuration circuit for a memory device is described. A memory system includes any number of memory devices serially connected to each other, where each memory device receives a clock signal. The clock signal can be provided either in parallel to all the memory devices or serially from memory device to memory device through a common clock input. The clock mode configuration circuit in each memory device is set to a parallel mode for receiving the parallel clock signal, and to a serial mode for receiving a source synchronous clock signal from a prior memory device. Depending on the set operating mode, the data input circuits will be configured for the corresponding data signal format, and the corresponding clock input circuits will be either enabled or disabled. The parallel mode and the serial mode is set by sensing a voltage level of a reference voltage provided to each memory device.

Abstract: A write precharge period for a pseudo-dual-port memory is initiated by an edge (rising or falling) of a read precharge signal. The same edge type (rising or falling) of a write precharge signal signals the end of the write precharge period.

Abstract: An apparatus for providing an augmented broadcasting service and an apparatus for receiving the augmented broadcasting service in a hybrid broadcasting environment. The apparatus for providing the augmented broadcasting service includes: a real-time data provider configured to provide real-time data through a first transmission network; an augmented content provider configured to provide augmented content through a second transmission network, wherein the augmented content is to be synchronized with the real-time data; and a multiplexer configured to multiplex the real-time data, the augmented content metadata and timing information for synchronization between the real-time data and the augmented content metadata, and output resulting data.

Abstract: A semiconductor apparatus includes a pulse generation unit configured to detect a transition of an input signal and generate a preliminary pulse signal, and an error elimination unit configured to determine error of the preliminary pulse signal and output a signal as a pulse signal.

Abstract: A method, an apparatus, and a computer program product are described. The apparatus generates a receive clock signal for receiving data from a multi-wire open-drain link by determining a transition in a signal received from the multi-wire open-drain link, generating a clock pulse responsive to the transition, delaying the clock pulse by a preconfigured first interval if the transition is in a first direction, and delaying the clock by a preconfigured second interval if the transition is in a second direction. The preconfigured first and/or second intervals are configured based on a rise time and/or a fall time associated with the communication interface and may be calibrated by measuring respective delays associated with clock pulses generated for first and second calibration transitions.

Abstract: A voltage scaling system can scale a supply voltage while preventing a processor from communicating with first system components that are rendered unstable from the scaling. On the other hand, the voltage scaling system allows second system components that are stable during the scaling to communicate with the processor. A processor scales a system supply voltage to a target supply voltage. The processor halts operations of the first system components and executes the instruction. When the first system components are halted, the processor cannot access the first system components. The second system components can continue operating during the scaling. A controller that saves power can configure a voltage regulator to scale the system supply voltage to the target supply voltage. Once the target supply voltage is reached, the voltage regulator sends an indication to a power management unit, after which the first system components continue to operate.

Abstract: In general, in one aspect, embodiments of the invention relate to a method for generating executable binary. The method includes analyzing a test executable binary generated from source code, wherein the source code comprises a plurality of functions, generating, based on analyzing the test executable binary, a code call tree comprising a plurality of call durations for the plurality of functions, and determining, using the code call tree, a function order of the plurality of functions. The method further includes generating, using the function order, a call tree order map, generating a call tree ordered executable binary using the source code and the call tree order map, and executing the call tree ordered executable binary on a processor.

Abstract: Sequential circuits with error-detection are provided. They may, for example, be used to replace traditional master-slave flip-flops, e.g., in critical path circuits to detect and initiate correction of late transitions at the input of the sequential. In some embodiments, such sequentials may comprise a transition detector with a time borrowing latch.

Abstract: Single-ended read circuits for SRAM devices are disclosed for high performance sub-micron designs. One embodiment is an SRAM device that includes a memory cell array and a bit line traversing the memory cell array for reading data from memory cells of the memory cell array. A read circuit coupled to the bit line translates data stored in a memory cell from a cell voltage of the memory cells to a peripheral voltage of an output of the SRAM device while bypassing a level shifter in the read data path.

Abstract: A semiconductor memory device may be effectively evaluated by a test that compares the phase of an internally generated control signal with the phase of an internally generated clock signal. Specifically, if the phase of the internal data strobe signal IDQS is synchronized with the phase of the internal clock signal ICLK through the test, the data strobe signal DQS may also be synchronized with the external clock signal CLK. Thus, the test may prevent certain critical parameters, for example, AC parameter tDQSCK, from being out of an allowable range over PVT (process, voltage, and temperature variation). The test helps ensure that the semiconductor memory device will operate properly in read mode.

Abstract: A memory system includes a memory controller that writes data to and reads data from a memory device. A write data strobe accompanying the write data indicates to the memory device when the write data is valid, whereas a read strobe accompanying data from the memory device indicates to the memory controller when the read data is valid. The memory controller adaptively controls the phase of the write data strobe to compensate for timing drift at the memory device. The memory controller uses read signals as a measure of the drift.

Abstract: A memory system includes a multi-port memory having a first port and a second port. First registers and second registers provide first and second addresses, respectively, to the first and second ports. An access controller controls the multi-port memory to launch an access for the valid address provided by the first input registers in response to the first edge of the master clock unless an immediately preceding first edge of the master clock has occurred more recently than the most recent occurrence of the first edge of the first clock and to launch an access for the valid address provided by the second input registers in response to the first edge of the master clock unless an immediately preceding first edge of the master clock has occurred more recently than the most recent occurrence of the first edge of the second clock.

Abstract: A memory operate in a normal mode of operation or a testing mode of operation. In the testing mode of operation, the memory can measure various benchmarks of performance, such as read speed. The memory can perform an asynchronous read operation to read a word of electronic data that corresponds to an address or a page read operation in which multiple asynchronous read operations are performed to read multiple words of electronic data, also referred to as a page of electronic data, that correspond to multiple addresses. The memory can measure a time required, referred to as read speed, to read the word of electronic data or the multiple words of electronic data from the memory.

Abstract: A semiconductor device is disclosed which comprises a clock generating circuit generating first and second divided clocks by dividing an input clock by first and second division number, respectively, and a counter circuit including a shift register having a plurality of stages that sequentially shifts an input signal and outputs an output signal delayed based on setting information. The counter circuit individually controls operation timings of the stages of the shift register by selectively supplying either of the first and second divided clocks to each stage of the shift register, and either of signals from the stages of the shift register is extracted and outputted as the output signal.

Abstract: A memory includes a self-timed column imitating a bitline loading, a self-timed row imitating a self-timed word-line, a self-timed bitcell performing a dummy write in a write cycle, a writer driver coupled to the self-timed bitcell for an actual write, and an edge detection circuit coupled to the self-timed bitcell for tracking a write cycle time.

Abstract: A controlling method of a connector, the connector, and a memory storage device are provided. The controlling method includes following steps. A first clock signal generated by a first oscillator in the connector is obtained. A second clock signal generated by a second oscillator in the connector is obtained. A frequency shift of the first oscillator is smaller than a frequency shift of the second oscillator. A detection window information corresponding to the second clock signal is corrected according to the first clock signal and the second clock signal. The first oscillator is turned off. A signal stream including a first signal is received. A detection window is generated according to the corrected detection window information and the second clock signal, and whether the first signal is a burst signal is determined according to the detection window. Thereby, the power consumption of the connector is reduced.

Abstract: A circuit for detecting a signal transition on an input signal includes a mirror delay circuit and an input blocking circuit to prevent signal glitches or undesired signal pulses from being passed to the output signal node, thereby preventing signal distortions from being detected as a valid signal transition. The input transition detection circuit generates stable and correct transition detection pulses having a consistent pulse width.

Abstract: A startup circuit is disclosed operable to perform a startup operation for an electronic device comprising digital circuitry. The startup circuit comprises a first clock generator operable to generate a first clock comprising a first period, and a second clock generator operable to generate a second clock independent of the first clock. The second clock is operable to clock the digital circuitry and comprises a second period less than the first period. A first counter counts a first number of the second periods over the first period, and the second clock is enabled to clock the digital circuitry in response to the first counter.

Abstract: A data input circuit includes a clock sampling unit, a final clock generation unit, and a write latch signal generation unit. The sampling unit is configured to generate a shifting signal including a pulse generated after a write latency is elapsed, and generate a sampling clock by sampling an internal clock during a burst period from substantially a time when the pulse of the shifting signal is generated. The final clock generation unit is configured to generate a level signal by latching the shifting signal in synchronization with the sampling clock and generate a final clock from the level signal in response to a burst signal. The write latch signal generation unit is configured to generate an enable signal by latching the final clock and generate a write latch signal for latching and outputting aligned data in response to the enable signal.

Abstract: A new address transition detection (ATD) circuit for use on an address bus having a plurality of address signal lines comprises a first circuit for each address signal line and a second circuit. The first circuit has a first input, a second input and an output. The first input is coupled to an address signal line. The second input is coupled to an ATD signal. The first circuit saves the current level of the first input in response to an ATD pulse on the ATD signal and generates a change signal at its output by comparing the current level and the saved level of the first input. The second circuit has an input and an output. The second circuit receives on its input the change signal from the first circuit. In response, the second circuit generates the ATD pulse on the ATD signal at its output.

Abstract: A method and a system are provided for performing write assist. Write assist circuitry is initialized and voltage collapse is initiated to reduce a column supply voltage provided to a storage cell. A bitline of the storage cell is boosted to a boosted voltage level that is below a low supply voltage provided to the storage cell and data encoded by the bitline is written to the storage cell.

Abstract: A latch-based memory includes a plurality of slave latches arranged in rows and columns. Each column of slave latches receives a latched data signal from a corresponding master latch. Each row includes a clock gating circuit and a corresponding reset circuit. If a row is active for a write operation, the active row's clock gating circuit passes a write clock to the active row's slave latches. Conversely, the clock gating circuit for an inactive row gates the write clock to the inactive row's slave latches by passing a held version of the write clock in a first clock state to the inactive row's slave latches. While a reset signal is asserted, each reset circuit gates the write clock by passing the held version of the write clock in the first clock state to the slave latches in the reset circuit's row.

Abstract: An apparatus including a protocol engine and a built-in self test (BIST) engine. The built-in self test (BIST) engine is coupled to the protocol engine. The built-in self test (BIST) engine may be configured to directly control when to open and close rows of a synchronous dynamic random access memory (SDRAM) during double data rate (DDR) operations.

Abstract: An output enable signal generation circuit includes an output enable reset signal generation unit configured to enable an output enable reset signal in response to an external clock signal, a DLL locking signal, and a reset signal, an output enable reset signal delay unit configured to delay the output enable reset signal and output the delayed output enable reset signal, a counter unit configured to output the count of the external clock signal as a value in response to the output enable reset signal and the delayed output enable reset signal, a read command delay unit configured to delay a read command and output the delayed read command, and an output enable signal output unit configured to shift the delayed read command in synchronization with a DLL clock signal and output an output enable signal, according to control of CL and the count value.

Abstract: A memory device includes a DRAM, a first bi-directional tracking circuit and a second bi-directional tracking circuit. The DRAM includes a cell, a word line and a bit line. The first bi-directional tracking circuit is configured to track a first timing constraint associated with turning on or turning off the word line. The second bi-directional tracking circuit is configured to track a second timing constraint associated with turning on the bit line, turning off the bit line, or accessing the cell via the bit line.