Abstract: An integrated circuit that enables a reduction in chip size and test time.

Abstract: Selecting circuits for columns of an array of memory cells are used to hold read data or write data of the memory cells. The memory cells may be multistate memory cells. There is a shift register chain, having a stage for columns of the array. A strobe pulse is shifted through this shift register. The strobe points, with each clock, at and enables a different selecting circuit in sequence. That particular selecting circuit that has been enabled by the strobe will then perform a certain function. In a read mode, the selected selecting circuit will send the stored information through to the output buffer for output from the integrated circuit. And while in a programming mode, the selected selecting circuit will receive data from an input buffer. This data will be written into a memory cell.

Abstract: A semiconductor memory device includes: a plurality of ports configured to perform a serial input/output (I/O) data communication with external devices; a plurality of banks configured to perform a parallel I/O data communication with the ports; a global data bus configured to transmit a signal between the banks and the ports; a test mode determiner configured to determine an operation mode of the semiconductor memory device by generating a test mode enable signal in response to a test mode control signal; a test I/O controller configured to transmit and receive a test signal with the ports in response to the test mode enable signal during a port test mode; and a plurality of selectors, each of which is configured to receive the test signal output from the corresponding port in series and feedback the test signal to the corresponding port.

Abstract: A semiconductor memory device includes an array of memory cells and an adjustment circuit for adjusting the pulse width of an address transition detect equalizer (ATDEQ) signal. The adjustment circuit receives an address transition detection (ATD) signal and is responsive to the level changes of voltages Vp and Vn to adjust the pulse width of the ATDEQ signal accordingly. The resulting signal ATDEQ is supplied to a power supply circuit for a bit line selector for selecting a bit line of the array of memory cells. The device can thus accomplish the readouts of bit “0” and bit “1” in a state less liable to delay.

Abstract: An asynchronous pseudo SRAM having compatibility with asynchronous SRAMs. A read request or a write request of data is provided at arbitrary timing to the asynchronous pseudo SRAM, the asynchronous pseudo SRAM includes a memory cell array comprising dynamic memory cells; an array control circuit that is activated in response to an access enable signal, the array control circuit reads data from or writes data in the memory cell array in response to address signals, and the array control circuit activates a busy signal during reading or writing of data; an access reception circuit for receiving the read request or the write request to activate an access wait signal and inactivating the access wait signal in response to the access enable signal; and an access activation circuit for activating the access enable signal in response to activation of the access wait signal and inactivation of the busy signal.

Abstract: A flash memory device is programmed by loading first data into a page buffer of a first mat. Second data is loaded into a page buffer of a second mat while programming the first data in a first memory block of the first mat.

Abstract: A high voltage generator includes: a high voltage detecting unit for detecting a level of a high voltage and outputting a high enable signal; an auto refresh control unit for enabling an auto refresh high enable signal in response to a detection signal enabled when a level of a power supplying voltage is lower than a certain level and in response to the pumping enable signal during an auto refresh operation; and a high voltage generating unit for generating a high voltage by performing a pumping operation in response to the auto refresh pumping enable signal.

Abstract: A semiconductor memory device 100 is proposed including an internal address generation circuit 3, a first internal address control signal generation part 4, a second internal address control signal generation part 11, and an internal address control signal selection circuit 10 having an OR gate transistor 12. The internal address generation circuit 3 generates an internal address signal based on input address data. The first internal address control signal generation part 4 generates a first internal address control signal and having a function which fixes the first internal address control signal at a predetermined level with the elapse of a fixed period of time. The second internal address control signal generation part 11 generates a second internal address control signal corresponding to an input of a predetermined command. The OR gate transistor 12 transmits either the first internal address control signal or the second internal address control signal to the internal address generation circuit 3.

Abstract: A sense amplifier enable signal generator has two stages. Each stage offsets transistor performance variation in the other stage to produce an enable signal output relatively immune from the effects associated with transistor mismatches. In one embodiment, a memory device comprises a plurality of memory cells, sense amplifier circuitry and the enable signal generator. The sense amplifier circuitry is coupled to one or more of the memory cells and senses the state of the one or more memory cells when enabled. The enable signal generator has first and second stages and generates an enable signal applied to the sense amplifier circuitry. The enable signal generator counteracts delay variation when generating the enable signal so that operation of the enable signal generator is substantially unaffected by transistor performance variation in either stage of the enable signal generator.

Abstract: The data output control signal generating circuit includes a delay correction signal generating unit that delays an input signal by a phase difference between a clock and a delay locked loop clock, and latches the delayed signal to generate a plurality of output enable signals. A column address strobe latency control multiplexer selects the output enable signal corresponding to column address strobe latency among the plurality of output enable signals, on the basis of the signal obtained by delaying the input signal by the phase difference between the clock and the delay locked loop clock, and outputs the selected signal as the data output control signal.

Abstract: A nonvolatile latch circuit that exhibits improved the performance of a system is presented. The nonvolatile latch circuit is capable of storing all kinds of the states generated during the operation of the system as non-volatility information. The nonvolatile latch circuit is capable of restoring the previous state where of power is unexpectedly interrupted when the system is re-booting. The present invention includes an input control unit, a data control unit, a storage control unit, a clock control unit, a data transition detecting unit, and a data output unit.

Abstract: Embodiments relates to a memory device, comprising a plurality of memory cells, said memory cells being addressable by a plurality of addresses, an interface for reading and/or writing data from a host system to said memory device, said interface comprising at least an address bus and a clock signal line, said address bus being configured to transmit a first part of an address at the leading edge of said clock signal and a second part of an address at the trailing edge of said clock signal.

Abstract: A signal capture system and method is used to capture a data signal using a data strobe signal having a preamble of strobe signal transitions. The system includes a data latch circuit receiving the data signal. The data latch circuit is clocked by transitions of the data strobe signal to capture respective bits of data corresponding to the data signal. A decoder receives a memory command signal and generates a data start signal after a delay period from receiving the memory command signal if the command signal corresponds to a read or a write command. The receipt of read or write command signals is used by a control circuit to identify the start of valid read or write data signals. The control circuit then outputs the captured data signals responsive to the data start signal, thereby ignoring the transitions in the preamble of the data strobe signal.

Abstract: In order to implement a memory having a large storage capacity and a reduced data retention current, a non-volatile memory, an SRAM, a DRAM, and a control circuit are modularized into one package. The control circuit conducts assignment of addresses to the SRAM and DRAM, and stores data that must be retained over a long period of time in the SRAM. In the DRAM, a plurality of banks are divided into two sets, and mapped to the same address space, and sets are refreshed alternately. A plurality of chips of them are stacked and disposed, and wired by using the BGA and chip-to-chip bonding.

Abstract: A non-volatile memory array such as a flash memory array may include a power savings circuit to control a stand-by mode of the non-volatile memory array. The power savings circuit may cause a placement of the non-volatile memory array into a stand-by mode in the absence of activity on at least one or more inputs of the non-volatile memory array. Power may be saved automatically without processor intervention by reducing the operating current of the non-volatile memory array. The automatic power savings circuit may provide a chip enable output to an input of stand-by circuitry to control the operation of the standby circuitry without requiring an explicit stand-by command from a processor.

Abstract: A memory control method includes: latching a clock signal to selectively generate a phase lead detection result and a phase lag detection result in response to a data strobe signal; delaying the data strobe signal to generate a plurality of delayed data strobe signals; latching the clock signal to generate a plurality of phase detection results in response to the delayed data strobe signals so as to correspond to the delayed data strobe signals; latching write data carried by a data signal according to rising/falling edges of the data strobe signal; performing odd/even data separation on the write data to generate a data separation signal carrying odd/even data corresponding to the write data; and in a situation where the data strobe signal leads the clock signal, delaying or bypassing the odd/even data carried by the data separation signal according to the phase detection results. A memory control circuit is provided.

Abstract: An apparatus and method are provided for accessing a serial memory without knowing the required number of address bits. The apparatus comprises a pull circuit, a data out control circuit and a transition detector. The pull circuit causes the input terminal to be set to a first predetermined logic state in response to a read command being provided to the serial memory. The data out control circuit has an output terminal for providing the read command and a first predetermined number of address bits to the output terminal. The transition detector is coupled to an input terminal for detecting if the input terminal transitions from the first predetermined logic state to a second predetermined logic state in response to the first predetermined number of address bits. The transition detector will detect a transition of the input terminal when a correct number of address bits have been provided.

Abstract: A method for detecting which of two clock signals is the first to arrive may include providing a sense amplifier comprising first and second nodes located on first and second legs thereof. The sense amplifier is configured such that the first and second nodes have a substantially equivalent initial voltage. The method then includes receiving first and second clock signals. The sense amplifier is configured such that the voltage of the first node increases and the voltage of the second node decreases if the first clock signal arrives before the second clock signal. Similarly, the sense amplifier is configured such that the voltage of the second node increases and the voltage of the first node decreases if the second clock signal arrives before the first clock signal. The method may further include sampling the voltage of at least one of the first and second nodes to determine which of the first and second clock signals was the first to arrive.

Abstract: A memory comprises a memory array and a plurality of clock driver circuits for providing a plurality of clock driver signals for timing an access to the memory array. A timing control circuit is coupled to the plurality of clock driver circuits. The timing control circuit includes a latch that is coupled to each of the plurality of clock driver circuits. The latch is for storing a logic state representative of a logic state of each of the plurality of clock driver signals in response to a first predetermined edge of a clock signal. The timing control circuit removes complex logic gates from the clock critical timing paths. Also, circuit topology is simplified allowing improved critical timing performance. Also, all of the clock driver circuits share a common latch control to improve clock recovery synchronization and reduce a risk of initializing the clock timing circuit in the wrong logic state.

Abstract: A parallel bit test circuit for a semiconductor memory device may include a plurality of data compressors, a delay unit, and a bus width converter. The data compressors may receive data output from data lines, compress the data, and output the compressed data. The delay unit may receive a clock signal, and may generate (N?1) number of delayed clock signals from the clock signal when a burst length is a natural number equal to or more than 2. The bus width converter may receive the compressed data through M number of input terminals, divide the compressed data into N number of data sets, and serially output the N number of data sets through M/N number of output terminals in response to the clock signal and the (N?1) number of delayed clock signals, where M may be the number of bits of the data output from the data lines.

Abstract: This patent describes a method for switching search-lines in a Content Addressable Memory (CAM) asynchronously to improve CAM speed and reduce CAM noise without affecting its power performance. This is accomplished by resetting the match-lines prior to initiating a search and then applying a search word to the search-lines. A reference match-line is provided to generate the timing for the search operation and provide the timing for the asynchronous application of the search data on the SLs. Additional noise reduction is achieved through the staggering of the search data application on the SLs through programmable delay elements.

Abstract: A semiconductor memory device adapted to perform a page mode operation comprises a first address transition detector adapted generate a first clock signal upon detecting a transition of a start address, a second address transition detector adapted to generate a second clock signal upon detecting transition of a lower bit of the start address and after the first clock signal is generated, and an address controller adapted to sequentially increment the start address in response to a transition of the second clock signal. The address controller sequentially accesses memory cells selected by the start address and the incremented start address in response to a transition of the second clock signal.

Abstract: A scheme for defective memory column or row substitution is disclosed which uses a programmable look-up table to store new addresses for column selection when certain column or row addresses are received. The new addresses are loaded into a programmable fuse latch each time an address transition is detected in the input address.

Abstract: A memory access mode detection circuit and method for detecting and initiating memory access modes for a memory device The memory access mode detection circuit receives the memory address signals, the control signals, and the clock signal and generates a first mode detection signal in response to receipt of the memory address signals or a first combination of control signals. An first mode initiation signal is generated a time delay subsequent to the detection signal to initiate the first mode memory access operation. In response to receipt of a second combination of control signals and an active clock signal, the memory access mode detection circuit further generates a second mode detection signal to initiate a second mode memory access operation and to suppress generation of the first mode detection signal, thereby canceling the first mode memory access operation.

Abstract: A magnetic random access memory having an extended address transition detection circuit having a chip enable input, a chip write enable input, a data bus connection, and an address bus connection. The extended address transition detection circuit has an extended transition detection signal output. The magnetic random access memory has a timing controller with a timing control input connected to the address transition detection signal output. The chip enable input, the chip write enable input, the data bus connection, and the address bus connection are buffered and driven off chip.

Abstract: A data system component having a state machine circuit and receivers that utilize high and low threshold signals permits accurate detection of strobe signal pattern edges such as those for preamble, burst and post-amble conditions in the strobe signal. The state machine circuit may then be configured to set conditions associated with further circuit elements such as for power saving, data reception, on-die termination, etc. based on the conditions detected in the strobe signal to improve data or memory system performance. The components may be implemented as part of memory controllers and/or memory such as a dynamic random access memory and used in memory read and write operations.

Abstract: Data signals received in an integrated circuit are coupled to a receiver and to an on-chip data acquisition system which takes measurement samples of the data signal in response to a measurement request. The measurement request is synchronized with an asynchronous sample clock signal generating a capture signal and a counter reset signal. A counter measures the number of sample clock cycles between measurement requests. On receipt of a measurement request, the capture signal triggers the storage, as capture data, the preset number of cycles in the counter and the measurement samples in a register. The counter is synchronously reset and the capture data is sent to off-chip storage.

Abstract: A semiconductor memory device adapted to perform a page mode operation comprises a first address transition detector adapted generate a first clock signal upon detecting a transition of a start address, a second address transition detector adapted to generate a second clock signal upon detecting transition of a lower bit of the start address and after the first clock signal is generated, and an address controller adapted to sequentially increment the start address in response to a transition of the second clock signal. The address controller sequentially accesses memory cells selected by the start address and the incremented start address in response to a transition of the second clock signal.

Abstract: Apparatus and methods for filtering spurious output transitions with an adaptive filtering circuit which tracks the memory architecture and form factors with a reduced speed penalty. The filtering is selectable by a fuse option.

Abstract: An interface conversion macro converts a signal compliant with a system interface specification output from a controller to a signal compliant with a memory interface specification, and outputs the same to a memory interface part, and it also converts a signal output from the memory macro to a signal compliant with the system interface specification and outputs the same to the controller. By converting the system interface specification and the memory interface specification to each other by an interface conversion macro, a common memory macro can be mounted on a semiconductor integrated circuit even when the system interface specification differs. Accordingly, when designing a system, the design verification time, evaluation time, and test time of the semiconductor integrated circuit can be reduced. As a result, the design time and design cost of the semiconductor integrated circuit can be reduced.

Abstract: A method is provided for adapting the phase relationship between a clock signal and a strobe signal for accepting write data to be transmitted into a memory circuit, a write command signal being transmitted to the memory circuit in a manner synchronized with the clock signal, a write data signal being transmitted synchronously with the strobe signal, a phase offset between the transmitted clock signal and the transmitted strobe signal being set such that the write data are reliably accepted in the memory circuit.

Abstract: A timing signal generator generates a timing signal when an external clock is synchronized with a predetermined internal timing. A frequency-divided clock generator divide a frequency of a DLL (Delay Locked Loop).clock so as to generate an even-numbered divided clock and an odd-numbered divided clock. An even-numbered output enable signal generator generates an even-numbered output enable signal on the basis of an external read command, the timing signal, a CL (CAS Latency), and the even-numbered divided clock. An odd-numbered output enable signal generator generates an odd-numbered output enable signal on the basis of the external read command, a timing signal in which the timing signal is inverted, the CL, and the odd-numbered divided clock. A logical unit logically operates the even-numbered output enable signal and the odd-numbered output enable signal and outputs an output enable signal.

Abstract: A phase detection method for detecting a phase difference between a data strobe signal and a clock signal, includes: latching the clock signal according to the data strobe signal to generate a phase lead/lag detection result; delaying the data strobe signal to generate a plurality of delayed data strobe signals; latching the clock signal according to the delayed data strobe signals to generate a plurality of phase detection results corresponding to the delayed data strobe signals, respectively; and if the phase lead/lag detection result indicates that the data strobe signal leads the clock signal, utilizing the phase detection results to represent the phase difference between the data strobe signal and the clock signal. A memory control method and a memory control circuit respectively corresponding to the phase detection method are further provided.

Abstract: An address buffer in a semiconductor memory apparatus includes: an address input unit that generates a first latch input address from a buffering enable signal and an input address. A clock synchronizing unit generates a second latch input address from the first latch input address and a clock. A synchronous address latch unit generates a synchronous output address from a command pulse signal and the second latch input address. A synchronous mode detecting unit determines whether a mode is a synchronous mode or not from a valid address signal and the clock to generate a synchronous mode signal. An asynchronous address latch unit generates an asynchronous output address from the synchronous mode signal, an address strobing signal, and the second latch input address.

Abstract: A data input device of a semiconductor memory device can reduce unnecessary current consumption occurring according to a setting of a bandwidth. The data input device includes: a bandwidth signal input part for receiving a bandwidth signal for setting a data bandwidth to output an internal bandwidth signal; a synchronization control part for generating synchronization signals and restrict-synchronization signals in synchronization with a data strobe signal, an activation of the restrict-synchronization signals being restricted through the internal bandwidth signal; a first data input part for aligning the data in response to the synchronization signals; and a second data input part for aligning the data in response to the restrict-synchronization signal and the internal bandwidth signal.

Abstract: A dual data rate (DDR) output circuit has first and second data paths therein that are asymmetric. The first data path is provided through a single-stage latch unit and the second data path is provided through a dual-stage flip-flop device containing a cascaded arrangement of two latch units. The DDR output circuit includes a latch unit, a flip-flop and a buffer circuit. The latch unit is configured to latch-in first data in-sync with a first edge of a clock signal and the flip-flop is configured to latch-in second data in-sync with the first edge of the clock signal. A buffer circuit is also provided. The buffer circuit is electrically coupled to an output of the latch unit and an output of the flip-flop. The buffer circuit is configured to generate the first data at an output terminal of the DDR output circuit in-sync with one edge (e.g. rising or falling) of the clock signal and further configured to generate the second data at the output terminal in-sync with another edge (e.g.

Abstract: A plurality of improved memory systems employing a phase detection system in conjunction with either a synchronous mirror delay or a delay-locked loop, and related methods of operation, are disclosed. The memory systems determine timing characteristics among multiple signals and, based upon those timing characteristics, vary which clock-related signal is output. The improvement relates in part to the incorporation of a clock divider that reduces the frequency of the clock signals utilized by the system. Due to the incorporation of the clock divider and an edge recovery device, attenuation, power dissipation and duty cycle distortion associated with propagation of the clock signal(s) are reduced. Further, the reduction in frequency of the clock signals allows for numerous differently-phased clock signals to be generated within the system, which allows for finer timing comparisons to be performed, thus allowing for finer selections to be made in relation to which clock-related signal is output.

Abstract: A semiconductor memory device includes an I/O line, a first sense amplifier connected to the first I/O line to amplify a signal applied on the first I/O line in response to a first control signal, a second sense amplifier for amplifying an output signal of the first sense amplifier in response to a second control signal, and a disabling unit for disabling the first control signal in response to an output signal of the second sense amplifier.

Abstract: A memory interface (20) for receiving memory signals individually synchronizes data signals to a delayed strobe signal in order to reduce the spread of the data signals prior to sampling. A delay is increased for an individual data signal if it transitions prior to the delayed strobe signal and the delay is decreased if the data signal transitions after the delayed strobe signal.

Abstract: A column path circuit includes address transition detectors which detect level transition of page address signals, thereby outputting transition detection signals each having a predetermined enable period, respectively. A detection signal coupler logically operates on the transition detection signals respectively outputted from the address transition detectors, and outputs a signal representing the results of the logical operation. A ready signal generator outputs a strobe ready signal having a predetermined enable period in response to an enabled state of the signal outputted from the detection signal coupler. A strobe signal generator generates a read strobe signal and a page address strobe signal for latch of the page address signals in response to the strobe ready signal.

Abstract: Mode register setting methods and apparatuses for semiconductor devices are provided in order to suppress a limit in the frequency at which a mode register of a semiconductor device operates from occurring before the semiconductor device carries out a typical write or read operation, as the frequency at which the semiconductor device operates increases. The mode register setting methods and apparatuses may be applied, for example, to DDR-type semiconductor devices. If a chip selection signal /CS maintains a logic low level for at least a first amount of time, a semiconductor device may initiate a clock-independent mode register setting operation. In the clock-independent mode register setting operation, a mode register set (MRS) command and an MRS code bit may be sampled when the logic level of a data strobe signal applied to the semiconductor device transitions from a logic low level to a logic high level.

Abstract: A plurality of improved memory systems employing a phase detection system in conjunction with either a synchronous mirror delay or a delay-locked loop, and related methods of operation, are disclosed. The memory systems determine timing characteristics among multiple signals and, based upon those timing characteristics, vary which clock-related signal is output. The improvement relates in part to the incorporation of a clock divider that reduces the frequency of the clock signals utilized by the system. Due to the incorporation of the clock divider and an edge recovery device, attenuation, power dissipation and duty cycle distortion associated with propagation of the clock signal(s) are reduced. Further, the reduction in frequency of the clock signals allows for numerous differently-phased clock signals to be generated within the system, which allows for finer timing comparisons to be performed, thus allowing for finer selections to be made in relation to which clock-related signal is output.

Abstract: Apparatus and methods for filtering spurious output transitions with an adaptive filtering circuit which tracks the memory architecture and form factors with a reduced speed penalty. The filtering is selectable by a fuse option.

Abstract: A nonvolatile latch circuit and a system on a chip with the same feature detection of change of latch data in an active period to store new data in a latch without an additional data storage time. The nonvolatile latch circuit does not require an additional data storage period but detects change of latch data in the active period to store new data in a nonvolatile latch unit. When power is accidentally off, new data are constantly stored in the nonvolatile latch unit, thereby preventing data loss and improving an operating speed without a booting time for restoring data.

Abstract: A semiconductor memory device conducts a burst read operation that avoids interrupt loading on a system. The memory device includes a memory cell array, a sense amplifier, a latch circuit and a burst mode control unit. The sense amplifier is configured to sequentially sense and amplifies data stored in the memory cell array. The latch circuit is configured for latching sensed data of the sense amplifier group and outputting the sensed data in response to a DUMP signal. The burst mode control unit is configured for detecting the length of invalid data included in the sensed data from a burst start address and controlling a point in time of DUMP signal generation according to the detection result to sequentially output only valid data among the sensed data.

Abstract: The present invention allows for the reduction in power consumption of memory devices. A memory device in one embodiment prohibits address signal propagation on internal address buses based upon a function being performed by the memory. As such, some, all or none of the externally provided address signals are allowed to transition past address buffer circuitry.

Abstract: A semiconductor memory device includes: a memory cell array, in which electrically rewritable and non-volatile memory cells are arranged; a sense amplifier circuit configured to be coupled to the memory cell array; a data transfer circuit disposed between the sense amplifier circuit and data input/output ports; a control signal generation circuit configured to generate a plurality of control signals based on a reference clock signal externally supplied, the control signals serving for controlling data input and output of the sense amplifier circuit and data transferring timing in the data transfer circuit; and an internal clock signal generation circuit configured to generate an internal clock signal based on the reference clock signal for serving as the basis of the control signals, the internal clock signal having the same clock cycle as the reference clock signal and a constant duty ratio without regard to the duty ratio of the reference clock signal.

Abstract: A semiconductor memory is provided in which a verification result of a circuit operation in a test mode can be output from a memory module complying with the FB-DIMM even if the semiconductor memory is mounted on the memory module. The semiconductor memory includes: a command decoding section that decodes a command to start a read mode in which stored data is output or a test mode in which a predetermined circuit operation is executed and then an execution result thereof is output; a signal generating section that, based on the decoded command, generates a first or second data strobe signal showing an output timing of the stored data or the execution result; and a data-strobe-signal outputting section that outputs the first data strobe signal to an external terminal in the read mode and that outputs the second data strobe signal to the external terminal in the test mode.

Abstract: A method for producing an integrated memory module containing a command decoding device that responds to external operation commands to set operating states of the memory module for carrying out operations in accordance with a predetermined specification of the memory module. The command decoding device is formed with a decision memory containing memory locations Mi,j, the storage capacity of which suffices to receive, for an arbitrary specification from a plurality of different specifications, a decision information item specifying whether or how the second operation command of selected pairs of two directly successive operation commands is to be executed. After integration of the command decoding device thus formed, the decision information items demanded in the case of the predetermined specification are written to the memory locations of the decision memory.

Abstract: A method for inline characterization of at least one high speed operating margin of a storage element is provided. An output of at least one latch of the integrated circuit device is transitioned from a first output logic state to a second output logic state. The storage element is accessed at least once in response to the transition of the output of the at least one latch to perform at least one of a write operation and a read operation. A state of at least one output latch is observed corresponding to a state of the storage element. The transitioning, accessing and observing steps are repeated for one or more adjustable parameters to determine at least one high speed operating margin of the storage element.