Abstract: A circuit for detecting an anti-fuse memory cell state includes a current providing module connected to a first node and used to provide constant current; an anti-fuse memory cell array connected to the first node and including at least one bit line, the at least one bit line is connected to a plurality of anti-fuse memory cells and the first node; and a comparator, a first input end of the comparator is connected to the first node and a second input end of the comparator is connected to a first reference voltage, and used to detect a storage state of an anti-fuse memory cell to be tested in the anti-fuse memory cell array.

Abstract: A semiconductor memory device includes: an input control circuit suitable for providing an active address which is input together with an active command, as an input address; a plurality of latches suitable for sequentially storing, as a latch address, the input address according to input control signals and outputting the latch addresses as a target address according to output control signals; a plurality of counters respectively corresponding to the latches and each suitable for increasing, when the active address matches the latch address stored in the latch, a counting value corresponding to the latch; and a refresh controller suitable for dividing the counters and the latches into a plurality of groups based on the counting values and generating, in response to a refresh command, reset signals for initializing the counters included in one group of the groups.

Abstract: A method for performing a read operation of a memory block of a read-only memory array, wherein the method comprises first enabling bit line precharge circuitry of the memory block, (thereby precharging one or more bit lines of the memory block to a first voltage level), enabling a word line of one or more addressed memory cells of the memory block, enabling a leakage current reduction circuit of the memory block, thereby generating across the addressed memory cells a first voltage differential equal to the first voltage level; subsequently discharging the addressed memory cells; disabling the word line of the one or more addressed memory cells; disabling the bit line precharge circuitry; and disabling the leakage current reduction circuit, thereby generating across the one or more addressed memory cells a second voltage differential that is equal to less than the first voltage differential.

Abstract: In one embodiment of the present disclosure, an OTP memory circuit may include: a fuse array configured to output fuse data of a fuse set corresponding to a fuse address among a plurality of fuse sets; and a fuse address generation circuit configured to generate the fuse address to search for an available fuse set within a particular region, corresponding to a defective address, among a plurality of regions of the fuse array.

Abstract: An integrated circuit (IC) chip embodiment includes first and second ROM cells arranged in a same row of a ROM array. The first and second ROM cells include first portions of first and second gate structures, respectively. The IC chip further includes a strap cell disposed between the first and second ROM cells. The strap cell includes second portions of the first and second gate structures. The first gate structure is physically separated from the second gate structure.

Abstract: A method and system are provided for predicting chemical structures. The method includes receiving, at a user interface, intended structural feature values and intended chemical property values, as vectors. The method further includes constructing, by a hardware processor, a prediction model, wherein the prediction model predicts other structural feature values from the intended structural feature values and the intended chemical property values, and automatically configuring, by the hardware processor, at least one chemical structure candidate from the other structural feature vectors.

Abstract: An integrated circuit (IC) chip embodiment includes first and second ROM cells arranged in a same row of a ROM array. The first and second ROM cells include first portions of first and second gate structures, respectively. The IC chip further includes a strap cell disposed between the first and second ROM cells. The strap cell includes second portions of the first and second gate structures. The first gate structure is physically separated from the second gate structure.

Abstract: A memory access control method that can prevent a cell hammer phenomenon includes setting at least a part of all the memory cells a safe memory region, and setting the remaining memory cells to a normal memory region. In the safe memory region, some cells set to an enabled state are accessible for data writing or reading, and the remaining cells set to a disabled state are inaccessible. Based on a safe address mapping algorithm, access to all memory cells in the safe memory region is controlled such that access to the enabled memory cells is allowed and access to the disabled memory cells is prevented. The enabled memory cells in the safe memory region are spaced apart from each other by at least one disabled memory cell in a horizontal and/or vertical direction.

Abstract: The present invention relates to methods, systems and apparatus for capturing, integrating, organizing, navigating and querying large-scale data from high-throughput biological and chemical assay platforms. It provides a highly efficient meta-analysis infrastructure for performing research queries across a large number of studies and experiments from different biological and chemical assays, data types and organisms, as well as systems to build and add to such an infrastructure.

Abstract: A method for integrating transistors and anti-fuses on a device includes epitaxially growing a semiconductor layer on a substrate and masking a transistor region of the semiconductor layer. An oxide is formed on an anti-fuse region of the semiconductor layer. A semiconductor material is grown over the semiconductor layer to form an epitaxial semiconductor layer in the transistor region and a defective semiconductor layer in the anti-fuse region. Transistor devices in the transistor region and anti-fuse devices in the anti-fuse region are formed wherein the defective semiconductor layer is programmable by an applied field.

Abstract: Methods, system and device are provided for detection and quantitative and qualitative analysis of components in a gaseous mixture distinguished by high selectivity and high resolution. The influence of individual gases may be distinguished through detection of changes associated with a sensor's sensitive layer that interacts with the components of the gaseous mixture. Through periodic variations of parameters or conditions of the sensor, the characteristics of the gas components may be derived. For example, the concentration of a gas or multiple gases in a mixture may be determined with a high degree of accuracy. Non-invasive detection of biological off-gases may be implemented. Other uses abound.

Abstract: An example of a system for programming a neurostimulator may include a storage device and a pattern generator. The storage device may store a pattern library and one or more neuronal network models. The pattern library may include fields and waveforms of neuromodulation. The one or more neuronal network models may each be configured to allow for evaluating effects of one or more fields in combination with one or more waveforms in treating one or more indications for neuromodulation. The pattern generator may be configured to construct and approximately optimize a spatio-temporal pattern of neurostimulation and/or its building blocks using at least one neuronal network model.

Abstract: A semiconductor device comprises a bit determination circuit to count the number of bits at a first level in an input address signal formed of a plurality of bits and to output a result indicating whether or not a value of the count exceeds a predetermined determination threshold value, as a bit determination result signal, and a selection control circuit to select a non-volatile program element to be cut off, based on the bit determination result signal and the address signal. Additional apparatus and methods are described.

Abstract: Systems, methods, and apparatuses for performing a prenatal diagnosis of a sequence imbalance are provided. A shift (e.g. to a smaller size distribution) can signify an imbalance in certain circumstances. For example, a size distribution of fragments of nucleic acids from an at-risk chromosome can be used to determine a fetal chromosomal aneuploidy. A size ranking of different chromosomes can be used to determine changes of a rank of an at-risk chromosome from an expected ranking. Also, a difference between a statistical size value for one chromosome can be compared to a statistical size value of another chromosome to identify a significant shift in size. A genotype and haplotype of the fetus may also be determined using a size distribution to determine whether a sequence imbalance occurs in a maternal sample relative to a genotypes or haplotype of the mother, thereby providing a genotype or haplotype of the fetus.

Abstract: Example implementations disclosed herein can be used to decode memory elements in a crosspoint array. In one example implementation, crosspoint array decoder includes a number of field effect transistor decoder switches corresponding to specific lines in a crosspoint array and a sense amplifier coupled to at least some of the field effect transistor decoder switches and includes a set of inference field effect transistors matched to the field effect transistor decoder switches to infer a stimulus voltage applied to a memory element in a crosspoint array.

Abstract: An integrated circuit (IC) chip embodiment includes first and second ROM cells arranged in a same row of a ROM array. The first and second ROM cells include first portions of first and second gate structures, respectively. The IC chip further includes a strap cell disposed between the first and second ROM cells. The strap cell includes second portions of the first and second gate structures. The first gate structure is physically separated from the second gate structure.

Abstract: An integrated One-Time Programmable (OTP) memory to emulate an Multiple-Time Programmable (MTP) memory with a built-in program count tracking and block address mapping is disclosed. The integrated OTP memory has at least one non-volatile block register and count register to respectively store block sizes and program counts for different block/count configurations. The count register can be programmed before each round of programming occurs to indicate a new block for access. The integrated OTP memory also can generate a block address based on values from the count and block registers. By combining the block address with the lower bits of an input address, a final address can be generated and used to access different blocks (associated with different program counts) in the OTP memory to mimic an MTP memory.

Abstract: A computer system is disclosed including a printed circuit board (PCB) including a plurality of traces, at least one processor mounted to the PCB to couple to some of the plurality of traces, a heterogeneous memory channel including a plurality of sockets coupled to a memory channel bus of the PCB, and a memory controller coupled between the at least one processor and the heterogeneous memory channel. The heterogeneous memory channel includes a plurality of sockets coupled to a memory channel bus of the PCB. The plurality of sockets are configured to receive a plurality of different types of memory modules. The memory controller may be a programmable heterogeneous memory controller to flexibly adapt to the memory channel bus to control access to each of the different types of memory modules in the heterogeneous memory channel.

Abstract: Provided is an apparatus for generating a digital value that may generate a random digital value, and guarantee time invariance of the generated digital value. The apparatus may include a digital value generator to generate a random digital value using semiconductor process variation, and a digital value freezing unit that may be connected to the digital value generator and fixed to one of a first state and a second state based on the generated digital value, to freeze the digital value.

Abstract: A method for nucleic acid sequencing includes disposing template polynucleotide strands in defined spaces on a sensor array, at least some of the template polynucleotide strands having a sequencing primer and a polymerase operably bound therewith; exposing the template polynucleotide strands to a series of flows of nucleotide species flowed according to a predetermined ordering; and determining, for each of the series of flows of nucleotide species, how many nucleotide incorporations occurred for that particular flow to determine a predicted sequence of nucleotides corresponding to the template polynucleotide strands, wherein the predetermined ordering (a) is not a series of consecutive repetitions of a 4-flow permutation of four different nucleotide species, (b) is not specifically tailored to a particular combination of a particular template polynucleotide strand to be sequenced and a particular sequencing primer to be used, and (c) comprises a phase-protecting flow ordering.

Abstract: A semiconductor device which includes a normal cell, a replica cell, a word line, a first bit line, a bias generation circuit, a second bit line, and a current generation circuit. The normal cell is a one-time programmable (OTP) type memory cell. The replica cell has characteristics equivalent to those of the normal cell. The word line is electrically connected in common to a control terminal of the normal cell and a control terminal of the replica cell. The first bit line is electrically connected to an input-output terminal of the replica cell. The bias generation circuit is electrically connected to the first bit line. The second bit line is electrically connected to an input-output terminal of the normal cell. The current generation circuit is electrically connected to the second bit line. The bias generation circuit and the current generation circuit are controlled through a common control line.

Abstract: A semiconductor device comprises a bit determination circuit to count the number of bits at a first level in an input address signal formed of a plurality of bits and to output a result indicating whether or not a value of the count exceeds a predetermined determination threshold value, as a bit determination result signal, and a selection control circuit to select a non-volatile program element to be cut off, based on the bit determination result signal and the address signal. Additional apparatus and methods are described.

Abstract: A low-pin-count non-volatile (NVM) memory with no more than two control signals that can at least program NVM cells, load data to be programmed into output registers, or read the NVM cells. At least one of the NVM cells has at least one NVM element coupled to at least one selector and to a first supply voltage line. The selector is coupled to a second supply voltage line and having a select signal. No more than two control signals can be used to select the at least one NVM cells in the NVM sequentially for programming the data into the at least one NVM cells or loading data into the at least one output registers. Programming into the NVM cells, or loading data into output registers, can be determined by the voltage levels of the first to the second supply voltage lines.

Abstract: Semiconductor memory devices include unit cells two-dimensionally arranged along rows and columns in one cell array block. The unit cells are classified into a plurality of cell subgroups, and each of the cell subgroups includes the unit cells constituting a plurality of the rows. Each of the unit cells includes a selection element and a data storage part. A word line is connected to gate electrodes of selection elements of the unit cells constituting each column. Bit lines are connected to data storage parts of the unit cells constituting the rows. A source line, parallel to the bit line, is electrically connected to source terminals of the selection elements of the unit cells in each cell subgroup. The source line is parallel to the bit line. A distance between the source line and the select bit line is equal to a distance between the bit lines adjacent to each other.

Abstract: An encoded ROM array structure couples a first one of a first set of bitlines to a second one of a second set of bitlines through a transistor when the wordline connected to the gate terminal of that transistor is asserted. This encoded arrangement can be extended to any number of encoded bitlines, e.g., 2, 4, 8, 16, and so on. Each of the first plurality and second sets of bit lines are coupled to circuits for charging and discharging the bitlines. To read data from the first set of bit lines, the second set of bitlines is discharged, and vice versa.

Abstract: A method includes applying a first voltage setting to a first node and a second node of a selected memory cell for a first predetermined period of time in response to a command for programming a first logical state to the selected memory cell. A first stored logical state of the selected memory cell is obtained after the applying the first voltage setting operation. If the first stored logical state differs from the first logical state, a second voltage setting is applied to the first node and the second node of the selected memory cell; and a first retrial is performed. The first retrial includes applying the first voltage setting to the first node and the second node of the selected memory cell for the first predetermined period of time.

Abstract: A method for manufacturing a resistive element of a non-volatile memory includes the following steps. An insulation layer is formed on a conductive region. The insulation layer is etched to form a via in the insulation layer, wherein a bottom of the via is contacted with a top surface of the conductive region. A dielectric layer is formed on an inner wall and the bottom of the via. A barrier layer is formed on the dielectric layer. A metal layer is filled into the via. The dielectric layer and the barrier layer are reacted with each other to form a transition layer.

Abstract: Disclosed are various embodiments related to stacked memory devices, such as DRAMs, SRAMs, EEPROMs, and CAMs. For example, stack position identifiers (SPIDs) are assigned or otherwise determined, and are used by each memory device to make a number of adjustments. In one embodiment, a self-refresh rate of a DRAM is adjusted based on the SPID of that device. In another embodiment, a latency of a DRAM or SRAM is adjusted based on the SPID. In another embodiment, internal regulation signals are shared with other devices via TSVs. In another embodiment, adjustments to internally regulated signals are made based on the SPID of a particular device. In another embodiment, serially connected signals can be controlled based on a chip SPID (e.g., an even or odd stack position), and whether the signal is an upstream or a downstream type of signal.

Abstract: The present document relates to the programming of programmable memory devices, e.g. one-time programmable (OTP) memory device. In particular, the present document relates to efficient methods and systems for generating the supply voltage for programming a programmable memory device. A controller configured to control the programming of a data word into a programmable memory device is described. The controller is configured to set one or more digital control signals for programming the data word into the programmable memory device. Furthermore, the controller is configured to, subsequent to setting the one or more digital control signals, increasing a device supply voltage for the programmable memory device from a default operation level to a programming level.

Abstract: A low-pin-count non-volatile (NVM) memory to be provided in an integrated circuit. The low-pin-count non-volatile (NVM) memory can use only one external control signal and one internal clock signal to generate start, stop, device ID, read/program/erase pattern, starting address, and actual read/program/erase cycles. When programming or erasing begins, toggling of the control signal increments/decrements a program or erase address and a pulse width of the control signal determines the actual program or erase time. A data out of the low-pin-count non-volatile (NVM) memory can be multiplexed with the control signal. In some applications where only the integrated circuit can read the data, a second control signal internal to the integrated circuit generates start, stop, device ID, read pattern, starting address, and actual read cycles, while the first control signal external to the integrated circuit can do the same for the program or erase path.

Abstract: A memory device includes an anti-fuse cell array including a plurality of anti-fuse cells. Each anti-fuse cell includes a first cell transistor connected to a common node, a second cell transistor connected to the common node, and an access transistor connected to the common node. The first cell transistor is configured to store data and the second cell transistor is configured to store data when the first cell transistor has defect data.

Abstract: Methods and systems that extend the capability of fuse elements, anti-fuse elements, and combinations thereof to enable multi-time programmable memory elements are provided. Accordingly, significantly reduced area requirements and control circuitry complexity of memory elements is enabled. The provided methods and systems can be used in non-volatile memory storage, and are suitable for use in system on chip (SoC) products.

Abstract: A memory assist apparatus includes a detection circuit and a compensation circuit. The detection circuit is configured to provide a detection signal indicating whether a bit line configured to provide read access to a data bit stored at a memory bit cell has a voltage below a predetermined threshold. The compensation circuit is configured to pull down the voltage of the bit line if the detection signal indicates that the voltage of the bit line is below the predetermined threshold.

Abstract: A semiconductor memory device according to an embodiment includes a memory cell array including memory cells each formed from a transistor formed over an active area of a well and disposed at intersections of a word line and a bit line group, the memory cell having different connection states including a state in which a source or a drain of the transistor is not electrically connected to any one of bit lines belonging to the bit line group and states in which the source or the drain is electrically connected only to a specific one of the bit lines, and an active area serving as a gate of the transistor being continuously formed in arrangement areas of the bit lines of the bit line group and spaces between the bit lines.

Abstract: This description relates to a system for storing repair data of a random access memory (RAM) array in a one-time programming memory (OTPM). The system includes the RAM array, wherein the RAM array includes a main memory, redundant rows and columns, and a first repair register memory. The system further includes a built-in self-test-and-repair (BISTR) module having a second repair register memory, wherein the BISTR module is used to test and repair the RAM array. The system further includes the one-time programming memory (OTPM) for storing repair data from more than one test and repair stages for the RAM array, wherein the repair data from different test and repair stages are stored in a same data segment.

Abstract: A semiconductor device using resistive random access memory (ReRAM) elements and having improved tamper resistance is provided. The semiconductor device is provided with a unit cell which stores one bit of cell data and a control circuit. The unit cell includes n ReRAM elements (n being an integer of 2 or larger). At least one of the ReRAM elements is an effective element where the cell data is recorded. In reading the cell data, the control circuit at least selects the effective element and reads data recorded thereon as the cell data.

Abstract: A low-pin-count non-volatile (NVM) memory to be provided in an integrated circuit for a 3D IC to repair defects, trim devices, or adjust parameters is presented here. At least one die in a 3D IC can be built with at least one low-pin-count OTP memory. The low-pin-count OTP memory can be built with a serial interface such as I2C-like or SPI-like of interface. The pins of the low-pin-count OTP in at least one dies can be coupled together to have only one set of low-pin-count bus for external access. With proper device ID, each dies in a 3D IC can be accessed individually for soft programming, programming, erasing, or reading. This technique can improve the manufacture yield, device, circuit, or logic performance or to store configuration parameters for customization after 3D IC are built.

Abstract: The field programmable read-only memory device includes a memory cell having a switching element for storing bit information. The switching element provides a switchable electrical connection between a word line and a bit line and includes a static body and a movable connecting element. The switchable electrical connection is non-volatile.

Abstract: In one embodiment described herein, on-die programmable fuses may be used. On-die programmable fuses may be programmed by entities other than the chip manufacturer after the fuse array chip has been manufactured and shipped out. However, other non-volatile memories may also be used.

Abstract: Circuits, systems and techniques for testing a One-Time Programmable (OTP) memory are disclosed. An extra OTP bit can be provided as a test sample to be programmed. The programmed extra OTP bit can be read with any virgin cells in the OTP memory alternatively to generate a stream of logic 0 and logic 1 data so that every row or column path can be tested and the outcome can be observed in a pseudo-checkerboard pattern or other predetermined pattern. By carefully setting control signals, checkerboard-like pattern can be generated without actual programming any OTP cells in the memory array.

Abstract: A ROM memory circuit is disclosed having at least one electrical line, at least one keeper circuit electrically connected to the at least one electrical line, the keeper circuit including a first transistor, a terminal of the first transistor is driven by a dedicated control signal, wherein the dedicated control signal is configured to keep the voltage of the at least one electrical line at a first voltage.

Abstract: Power management of an embedded dynamic random access memory (eDRAM) by receiving an eDRAM power state transition event and determining both the current power state of the eDRAM and the next power state of the eDRAM from the power states of: a power-on state, a power-off state, and a self-refresh state. Using the current power state and the next power state to determine whether a power state transition is required, and, in the case that a power state transition is required, transition the eDRAM to the next power state. Power management is achieved because transitioning to a power-off state or self-refresh state reduces the amount of power consumed by the eDRAM as compared to the power-on state.

Abstract: Various embodiments may generally be directed to a variable resistance data storage device and a method of managing the device. A data storage device may have at least a controller configured to re-characterize at least one variable resistance memory cell in response to an identified variance from a predetermined resistance threshold.

Abstract: A memory device includes a substrate, and, disposed thereover, an array of vertical memory switches. In some embodiments, each switch has at least three terminals and a cross-sectional area less than 6 F2.

Abstract: A Read Only Memory (ROM) bitline cell apparatus and programming method therefore. The programming methodology ensures a ROM structure having open state and/or breaks in the diffusion and/or dummy wordline rows to provide bitline load balancing. The ROM bitline cell apparatus and programming method exhibits improved load balancing for any combination of 1's or all 0's on the bitline. The programming methodology identifies groups of consecutive ‘1’s on the bitline and instead of connecting the ‘1’ devices between BL/BL or GND/GND, those ‘1’ devices can be connected between BL/OPEN, OPEN/BL, GND/OPEN, OPEN/GND or OPEN/OPEN. With little or no variation in bitline loading, timing can be optimized for that single case of bitline loading.

Abstract: Aspects of the disclosure provide an integrated circuit (IC) that is configured to have an increased yield. The IC includes a memory element configured to store a specific value determined based on a characteristic of the IC, and a controller configured to control an input regulator based on the specific value of the IC. The input regulator is operative to provide a regulated input to the IC during operation, such that the IC performance satisfies performance requirement.

Abstract: In one embodiment, a method for analyzing data generated by probe arrays is described that comprises receiving user selections of two or more data files and an identification of one or more subsets of intensity values acquired from a biological probe array. The method includes iteratively opening each data file, identifying the selected subset of intensity values associated with each open data file, determining parameters for processing, storing the parameters and the identified intensity values, and closing the open data file prior to the subsequent iteration. The method then includes processing the stored intensity values using the parameters to identify one or more biological events.

Abstract: According to embodiments, a method and system for artifact detection in signals is disclosed. The artifacts may take the form of movement artifacts in physiological (e.g., pulse oximetry) signals. Artifacts in the wavelet space of the physiological signal may be removed, replaced, ignored, filtered, or otherwise modified by determining the energy within a predefined moving area of the wavelet scalogram, comparing the determined energy within the predefined moving area of the wavelet scalogram to a threshold value, and masking at least one area of artifact in the wavelet scalogram based, at least in part, on the comparison. From the enhanced signal, physiological parameters, for example, respiration, respiratory effort, pulse, and oxygen saturation, may be more reliably and accurately derived or computed.

Abstract: A NOR-type ROM with hierarchical-BL structure, dynamic segmentation shielding, and source programming includes a plurality of bitcells forming a plurality of cell arrays, a plurality of WLs, a plurality of local bit lines LBLs electrically connected with the drains of the bitcells, a plurality of odd/even selection circuits electrically connected the LBLs that the bitcells in one of the cell array correspond to, a plurality of GBLs electrically connected the odd/even selection circuits that the bitcells in columns correspond to, and a plurality of odd-even precharge circuits electrically connected with the GBLs. The source of each bitcell is selectively grounded or floating according to the code-pattern.

Abstract: A ROM memory circuit is disclosed having at least one electrical line, at least one keeper circuit electrically connected to the at least one electrical line, the keeper circuit including a first transistor, a terminal of the first transistor is driven by a dedicated control signal, wherein the dedicated control signal is configured to keep the voltage of the at least one electrical line at a first voltage.