Abstract: The present invention provides a processing method capable of continuously working an Au—Sn soldering metal having a foil form in room temperature. The foil-form soldering metal containing from 10% by weight to 90% by weight of Au and balance comprising Sn is subjected to heat treatment for five minutes to ten hours at 200° C. to 270° C., and subsequently the foil-form soldering metal is slit. Thus, the heat treatment of the Au—Sn soldering metal before slitting enables continuous slitting of the Au—Sn foil-form soldering metal in room temperature and facilitates the production of a ribbon-form soldering metal.

Abstract: A gold (Au) alloy bonding wire for a semiconductor device is provided. The Au alloy bonding wire is manufactured by adding at least one of polonium (Po), promethium (Pm), thulium (Tm), and boron (B) to high-purity gold of 99.999% or more in an amount of 3–30 parts per million (ppm) by weight and at least one of magnesium (Mg), sodium (Na), vanadium (V), molybdenum (Mo), and technetium (Tc) in an amount of 3–30 ppm by weight to the high-purity gold. In the Au alloy bonding wire, high-temperature reliability after ball bonding is not reduced and damage near a ball neck in forming an ultra low loop of the Au alloy bonding wire can be prevented.

Abstract: A jewellery alloy, having a substantially purple hue and sufficient toughness to withstand Rockwell 3 hardness testing with a 100 kg load without shattering, comprises 76 to 83.5 wt % gold and 16.5 to 21.5 wt % aluminum. In one embodiment, the alloy consists of more than 78.5 wt % gold (but not more than 83.5 wt %) and a balance or aluminium. In another embodiment, the alloy comprises an additional element selected from palladium and nickel.

Abstract: A hard precious metal alloy member is constituted of a gold alloy, which has a gold Au content of from 37.50 to 98.45 wt %, and contains a hardening additive in a range of not less than 50 ppm but less than 15,000 ppm, wherein the hardening additive is constituted of gadolinium Gd only, or gadolinium Gd and at least one element selected from the group consisting of rare-earth elements other than Gd, alkaline-earth elements, silicon Si, aluminum Al, and boron B.

Abstract: The sputtering target made of a Ag—Bi-base alloy contains Bi in solid solution with Ag. The sputtering target has an intensity of precipitated Bi of 0.01 at %−1 or less, as calculated by the following mathematical expression (1) based on analysis results of X-ray diffraction, and/or a sum of area ratios of predetermined intensities (third to sixth intensities in 8 intensities) of 89% or more, wherein the area ratios are obtained by calculating a planar distribution of characteristic X-ray intensities of Bi according to X-ray microanalysis: intensity of precipitated Bi=[IBi(102)/IAg(111)+IAg(200)+IAg(220)+IAg(311))]/[Bi].

Abstract: A gold (Au) alloy bonding wire for a semiconductor device is provided. The Au alloy bonding wire is manufactured by adding at least one of polonium (Po), promethium (Pm), thulium (Tm), and boron (B) to high-purity gold of 99.999% or more in an amount of 3-30 parts per million (ppm) by weight and at least one of magnesium (Mg), sodium (Na), vanadium (V), molybdenum (Mo), and technetium (Tc) in an amount of 3-30 ppm by weight to the high-purity gold. In the Au alloy bonding wire, high-temperature reliability after ball bonding is not reduced and damage near a ball neck in forming an ultra low loop of the Au alloy bonding wire can be prevented.

Abstract: Platinum, silver and gold solder compositions for repairing, assembling, or sizing jewelry. Platinum compositions having about 90% to about 95% by weight platinum. Silver compositions having at least 92.5% by weight silver. Gold solder compositions having about 25% to about 91.6% gold. The platinum and silver solder compositions further consisting of about 8.3% to about 75% by weight of an alloy consisting essentially of gallium, indium and copper in respective ratios of 6:3:1. The gold solder compositions further consisting of about 2% to about 14% by weight of an alloy consisting essentially of gallium, indium, and copper in respective ratios of 6:3:1. The melting temperature ranges of the respective solder compositions are from about 1300° C. to about 1500° C. for platinum, from about 1000° F to about 1400° F for silver, and from about 1100° F to about 1550° F.

Abstract: When a diamond is brazed to a metal substrate, while obtaining a stable joining strength, a joined interface of the diamond is not eroded to provide a good joint with a beautiful view. A brazing-filler material containing at least one selected from a group consisting of gold and silver, and copper as principal components, and further containing 0.001 to 5 mass % of vanadium is used. Preferably, a vanadium content is not more than 2.0 mass %, and more preferably not more than 0.5 mass %. Using this brazing-filler material, unidirectional solidification is performed from a side of diamond to form vanadium carbide in a joined interface in a shape of islands, and thereby an interface having a beautiful view with stable joining strength can be obtained. In addition, strong joining is possible also by a usual solidification method.

Abstract: A hard precious metal alloy member is constituted of a gold alloy, which has a gold Au content of from 37.50 to 98.45 wt %, and contains a hardening additive in a range of not less than 50 ppm but less than 15,000 ppm, wherein the hardening additive is constituted of gadolinium Gd only, or gadolinium Gd and at least one element selected from the group consisting of rare-earth elements other than Gd, alkaline-earth elements, silicon Si, aluminum Al, and boron B.

Abstract: Gold alloy comprising, by weight, at least Gold Au≧33%, Iridium Ir≦0.4%, germanium Ge≦2%, 0.015% ≦silicon ≦0.3%, Phosphorus ≦0.02% and Copper Cu≦66%. The alloy can also comprise, in percentage by weight, Silver Ag≦34%, nickel Ni≦20% and Zinc Zn≦25%. In some variations the gold alloy can further comprise no more than 4% of at least one of the elements of the group constituted by cobalt, manganese, tin and indium, and no more than 0.15% of at least one of the deoxidizing elements of the group constituted by magnesium, silicon, boron and lithium. To the alloy can also be added at least one of the refining elements of the group constituted by ruthenium, rhenium and platinum in quantities not exceeding 0.4% by weight. The invention further relates to a master alloy for obtaining said gold alloy.

Abstract: A gold wire, for semiconductor element connection, having 5-100 ppm by weight of Ca, 5-100 ppm by weight of Gd, and 1-100 ppm by weight of Y. The gold wire further preferably has 1-100 ppm by weight of at least one of Eu, La, Ce and Lu, as well as 1-100 ppm by weight of at least one of Mg and Ti. The total amount of the added elements being no greater than 200 ppm by weight. The balance being gold and unavoidable impurities. A semiconductor element connection method by ball bonding or bump connection using the gold wire.

Abstract: A dental alloy comprises 50-55% by weight gold, 10-20% by weight platinum, 0-10% by weight silver, 15-35% by weight nickel, 0-10% by weight indium, 0-10% by weight tin; and 0.1% by weight grain refiner. The dental alloy may be made by mixing preselected quantities of gold, platinum, nickel and a grain refiner, subjecting the mixture to a heating process until all the metals are brought to a molten state, and thereafter allowing the metals in the molten state to cool and cure in a mold.

Abstract: The present invention is directed to brazing filler metals that can be used in the infiltration brazing of porous matrix materials without the need for a flux. The brazing filler metals contain two different Group II metals and a third metal of Group 9 and 10. A particular brazing filler metal of the invention contains silver, copper, and nickel. The invention is also directed to composite materials formed by infiltration of the brazing material into a porous matrix, and to methods for preparing the composite materials. The invention is further directed to composite articles fabricated from composite materials, including steel bearings or bushings, and to methods of preparing the composite articles.

Abstract: The invention relates to use of a solder composition exhibiting a desired combination of high creep resistance at typical operating temperatures and low stress in formed solder joints. The invention uses a solder containing 82 to 85 wt. % Au, 12 to 14 wt. % Sn, and 3 to 4 wt. % Ga (optionally with up to 2 wt. % additional elements). The small amount of added Ga induces a significant depression in the liquidus temperatures of both Au and Sn, and thus a depressed melting point (about 27° C. less than eutectic Au—Sn solder), and also provides an enhanced temperature-sensitivity of the solder's creep resistance.

Abstract: A solder composition that bonds well to oxides and other surfaces to which solder bonding is conventionally difficult is provided. The solder is particularly useful for reliable bonding and packaging of optical components that often have oxide surfaces. The solder composition exhibits a microstructure containing a solder matrix in which is distributed fine, micron-scale islands of rare-earth-containing intermetallic particles. The existence of the islands makes the rare earth elements better available for bonding, and reduce the extent to which the rare earths are oxidized. Advantageously, the solder contains Au and/or Ag, in which the rare earth elements tend to have some solid solubility. Due to this solubility, the Au and/or Ag tend to provide some additional protection of the rare earths against oxidation, and thereby also provide accelerated dissolution of the rare earth into the molten solder.

Abstract: In a method for working up a gold bath or a gold alloy bath, which contains gold in the form of a gold sulphite complex, working up takes place through at least one oxidant, which oxidizes the sulphite contained in the complex and reduces the gold contained in the complex to its metallic form. In the method in particular hydrogen peroxide and potassium-peroxo-monosulphate are used as oxidants. The oxidants are provided in a kit.

Abstract: The invention provides an article comprising a solder that bonds well to oxides and other surfaces to which solder bonding is problematic. The solder composition contains one or more rare earth elements, which react with the oxide or other surface to promote bonding, and further contains sufficient Au and/or Ag to act as carriers for the rare earths. Because rare earths have some solid solubility in Au and Ag, the problem of intermetallic formation is lessened or eliminated, and improved bonding to oxide surfaces is attained.

Abstract: A superelastic alloy exhibiting shape memory or pseudoelastic properties contains about 46.3 weight percent Au and about 54.7 weight percent In. Such alloys containing the superelastic Au—In2 intermetallic compound which exhibits elasticity can be formed into a gasket or seal that can be deformed at low stress levels while additionally having corrosion resistant properties.

Abstract: A gold material for accessories comprises a hardened gold alloy composed of pure gold having a purity of 99% or more and from 200 to 2000 ppm, relative to the total weight of the resulting gold alloy, of one or more alloying components selected from Ca, Be, Ge and B, and optionally from 10 to 500 ppm, relative to the same, of one or more other alloying components selected from Mg, Al, Si, Mn, Fe, Co, Ni, Cu, Pd, Ag, In, Sn, Sb, Pb and Bi and/or from 10 to 1000 ppm, relative to the same, of one or more other alloying components selected from rare earth elements including Y.

Abstract: To provide a gold alloy thin wire advantageously applicable to high density packaging of semiconductor devices, in which the wire deformation upon resin molding is reduced to successfully achieve reduction in the bonding pitch and the wire diameter, a gold alloy thin wire according to the present invention consists of 0.015 to 1.0 wt % Cu, 0.0002 to 0.02 wt % Ca, and the balance consisting of Au and unavoidable impurities. Preferably, the Cu content is 0.1 to 1.0 wt % and the Ca content is 0.001 to 0.02 wt %, and more preferably, Cu and Ca are present in a weight content ratio Cu/Ca of from 40 to 800. The gold alloy thin wire further preferably contains one or more of Pt, Pd and In in a total amount of from 0.01 to 3.0 wt % and/or one or more of Y, La, and Ce in a total amount of from 0.0003 to 0.03 wt %.

Abstract: A method of manufacturing a high-purity gold alloy for making an electronic member, a dental member or a decorative member. The method includes subjecting a high-purity gold alloy having a Gd content of 1 to 49.9 ppm contained in 99.98 weight % or more gold to a solution heat treatment in which the elements of the high-purity gold alloy are uniformly dispersed at a temperature higher than a solubility curve and then rapidly cooled, and then to an age hardening treatment, before or after a working process for working the high-purity gold alloy into a desired line shape or other desired shape. The age hardening treatment can be performed if the working process is not carried out.

Abstract: A high-purity hard gold alloy containing 50 ppm or more of Gd and one or more of other additional elements in Au having a purity of 99.7% by weight or more, such that a total content of the additional elements is 100 to 3000 ppm. The high-purity gold alloy can be hardened to a level approximately equivalent to that of 18-karat gold at a relatively low working ratio, and the high-purity gold alloy thus hardened is not extremely softened by a heat treatment performed as a post-treatment, such as brazing or welding.

Abstract: A thin wire of gold alloy for wire bonding, consisting of: a first group consisting of 2 to 10 ppm by weight of scandium, 3 to 20 ppm by weight of beryllium, and 2 to 50 ppm by weight of indium; and the balance consisting of gold and unavoidable impurities. The thin wire has a loop height of 200 .mu.m or more and a wire flow after resin molding of not more than 5%.

Abstract: A gold alloy wire for wedge bonding, comprising 1 to 100 parts per million by weight of calcium (Ca), the remainder being gold and inevitable impurities, said gold alloy wire having a tensile strength of not less than 33.0 kg/mm.sup.2 and an elongation of 1 to 3%. The gold alloy wire has a gold purity of not less than 99.9% or further comprises 0.2 to 5.0% by weight of at least one element selected from the group consisting of Pd, Ag and Pt.

Abstract: A dental alloy is provided for use in porcelain-fused-to-metal dental restorations, which has an excellent oxide color and which can be cast and recast without deleterious effect, which comprises at least 99.5 wt. % gold, 0.1-0.25 wt. % zinc, 0.1-0.25 wt. % indium and 0-0.3 wt. % total of Rt, Pd, Rh, Ir, Re or combinations thereof.

Abstract: A high gold content dental alloy comprises, on a weight basis, 91 to 99.4% of gold, 0.5 to 3% of at least one metal selected from titanium and tantalum, up to 5% of silver, 0.05 to 1% of iridium and/or tungsten, and up to 1% at least one element selected from the group comprising rhodium, ruthenium, platinum, osmium, iron, molybdenum, niobium and rhenium.

Abstract: Precision attachments containing a titanium-containing gold alloy which is covered with a gold film, capable of being cast on, which have a golden yellow color, are extremely corrosion-resistant and, despite base metal constituents, form no oxides at the place of casting-on.

Abstract: According to the present invention provided is a gold wire for IC chip bonding which wire is unlikely to be broken after thermosonic wire bonding at an increased ultrasonic output, subsequent reverse deformation involving severe bonding and deformation of a ball neck portion and formation of a loop. The bonding gold wire essentially consists of 0.0001-0.005 wt % of Pt, 0.0001-0.005 wt % of Ag, 0.0005-0.005 wt % of Mg and 0.00005-0.005 wt % of Eu; with the balance being Au, said Au having less than 0.001% by weight of incidental impurity.

Abstract: This invention provides a thin gold-alloy wire for a semiconductor device capable of improving long term reliability of bonding with an electrode and capable of simultaneously accomplishing reduction of a wire bend and wire flow at the time of resin molding and high looping.The thin gold-alloy wire contains 50 to 3000 ppm by weight of Mn and the balance comprising gold and unavoidable impurities. Further, the thin gold-alloy wire comprises any of the following combinations 1, 2, 1+2, 2+3 and 1+2+3 when element groups to be added are classified into the following groups 1 to 3:1 1 to 20 ppm by weight in total of at least one of Be and B;2 1 to 30 ppm by weight in total of at least one of Ca, Sr and rare earth elements; and3 1 to 50 ppm by weight in total of at least oneof In and Tl.The thin gold-alloy wire according to the present invention has high bonding reliability at the bond portion with the electrode on a semiconductor device and can be packaged with high density semiconductor devices.

Abstract: Amorphous metal alloys rich in noble metals prepared by rapid solidification processing are disclosed. The alloys have at least a ternary composition having the formula M.sub.a G1.sub.b G2.sub.c, wherein M is at least one element selected from the group consisting of Ag, Au, Ru, Os, Rh, Ir, Pd, and Pt, and G1 is at least one element selected from the group consisting of B, C, Cu, Ni, Si, and Be, and G2 is at least one element selected from the group consisting of Y, the lanthanides, Zr, Hf, Ca, Mg, Ti, Nb, and Ta. The subscripts a, b, and c are atomic percentages; a ranges from 70 to 90 percent, and b and c range from 5 to 15 percent each. Preferably, a is at least 80 percent and b and c are generally equal. The amorphous metal alloys are readily glass forming and thermally stable at room temperatures.

Abstract: Disclosed is gold and platinum material having excellent mechanical strength while maintaining its high quality.The precious metal material of the present invention comprises 0.01 to 1% in weight of titanium, a rare earth metal or the like and a balance of platinum. The presence of 0.01 to 1% in weight of a selected metal provides platinum or gold material having sufficient hardness and mechanical strength while the high quality is maintained.

Abstract: This invention relates to a bonding wire (3) for connecting electrodes of a semiconductor element to outer leads (2). The bonding wire (3) consists of Cu of not less than 1 wt % but less than 5 wt %, and the balance Au and incidental impurities. The bonding wire is superior in rupture strength and bonding strength. Even if the diameter is thinned to about 10 .mu.m, high reliability may be insured for connection.

Abstract: A 10-carat gold alloy for ornaments comprises 41.7% gold 12.0 to 13.0% silver, 40 to 41.5% copper, and 4.5 to 5.5% zinc.

Abstract: A dental alloy is provided which is free of palladium, gallium and copper and which is compatible with a wide variety of composites and porcelain compositions. The alloy has a melting range of between about 870.degree. C. and 1230.degree. C. and a coefficient of thermal expansion of between 15.5.times.10.sup.-6 and 17.5.times.10.sup.-6 in/in/.degree. C. when heated from room temperature to 500.degree. C. The alloy contains between about 40 and 80 percent by weight gold, between 5 and 50 percent by weight of thermal expansion adjuster, between two and 15 percent by weight strengthener and oxide former, up to about 1.5 percent by weight grain refiner, and up to about 0.25 percent by weight deoxidizer.

Abstract: A resin-coated, bonding fine wire for use in forming bonded electrical connections on a semiconductor device, wherein the wire is characterized as having a tensile strength exceeded when the wire is further elongated in length in a range of 0.5% to 3.5% of its original length by breaking of the wire during tension testing. It has been determined that an insulated bonding fine wire exhibiting such relatively low ductility produces a loop profile maintainable in a stable condition during a bonding operation while providing reliable bonding strength.

Abstract: A process for generating in-situ low cost atmospheres suitable for annealing and heat treating ferrous and non-ferrous metals and alloys, brazing metals and ceramics, sealing glass to metals, and sintering metal and ceramic powders in a continuous furnace from non-cryogenically produced nitrogen containing up to 5% residual oxygen is presented. The disclosed process involves mixing nitrogen gas containing residual oxygen with a pre-determined amount of a reducing gas such as hydrogen, a hydrocarbon, or a mixture thereof, feeding the gaseous mixture through a non-conventional device into the hot zone of a continuous heat treating furnace, converting residual oxygen to an acceptable form such as moisture, a mixture of moisture and carbon dioxide, or a mixture of moisture, hydrogen, carbon monoxide and carbon dioxide, and using the resultant gaseous mixture for annealing and heat treating metals and alloys, brazing metals and ceramics, sintering metal and ceramic powders, and sealing glass to metals.

Abstract: A gold based jewelry alloy is disclosed of preferably the 10 to 18 karat range containing primarily gold, copper, zinc and silver. This alloy is formulated to create a unique color, a mid-range hue with a fresh, soft appearance that is very complimenting to a variety of skin tones and gem stones. Aside from characteristics of appearance, the alloy disclosed has an increased hardness over standard yellow alloys for longer wear and improved polish holding characteristics. The alloy disclosed has excellent castability and formability and responds well to typical jewelry manufacturing processes (i.e., tooling, stone setting, soldering, remelting, forging and plating). The alloy contains about 40% to about 76% gold, about 20% to about 52% copper, about 0% to about 12% zinc and about 0% to about 12% silver.

Abstract: A dental gold alloy which is soft enough for adjustment of a patient's occlusal condition, which is age-hardenable with passage of time at temperatures encountered within a patient's oral cavity, and which has a single phase structure which imparts improved corrosion resistance, the dental gold alloy consisting essentially of 82-67% by a weight of gold; 18-33% by weight of copper; and 2-8 at % of an age-hardening accelerator which is at least one metal selected from the group consisting of gallium, aluminum and zinc, wherein the dental gold alloy has been subjected to a solution treatment by heating at 670-700.degree. C. and quenching into water.

Abstract: Bonding wire for a semiconductor device contains high purity Au or Au alloy as a base metal and 25-10000 atppm of low boiling point element I having a boiling point lower than a melting point of the base metal and soluble in Au, or contains high purity Au or Au alloy as a base metal and 5-500 atppm of low boiling point element II having a boiling point lower than a melting point of the base metal and insoluble in Au, or contains high purity Au or Au alloy as a base metal and 5-10000 atppm of a mixture of low boiling point element I having a boiling point lower than a melting point of the base metal and soluble in Au and low boiling point element II having a boiling point lower than the melting point of the base metal and insoluble in Au under the condition of (content of the low boiling point element I)/25+(content of the low boiling point element II)/5.gtoreq.1.gtoreq.(content of the low boiling point element I)/10000+(content of the low boiling point element II)/500.

Abstract: A fusible conductive adhesive for making electrical and mechanical contact is provided. The fusible conductive adhesive contains a polymer having a glass transition temperature and a thermal expansion co-efficient. The thermal expansion co-efficient of the polymer is in the range of about 5 parts per million per degree centigrade to about 10 parts per million per degree centigrade along a z-axis. The polymer is loaded with a conductive material having a sintering temperature range overlapping the glass transition temperature of the polymer. In addition, the loading of the conductive material in the polymer is in the range of about 15% to about 20% conductive material by weight based on the total weight of the polymer and the conductive material.

Abstract: Disclosed is an electronic circuit device in which the solder (14) connecting lead pins (6) to the ceramic substrate (2) has a melting point of 356.degree. C. to 450.degree. C. and has a tensile strength being low in such an extent that a thermal contraction stress generated in a cooling process of the solder (14) from the melting point thereof is low and the substrate (2) does not break. The solder (14) is a Au-Ge alloy containing 10-15 wt % of Ge. Electronic circuit devices, which employ the above solder (14) in the connections, are free from damages in the ceramic wiring substrate (2) due to the bonding. Further, when the electronic circuit device undergoes a series of assembly processes after the above bonding, such solder (14) does not melt, and wettability of such solder (14) is favorable.

Abstract: A gold alloy for black coloring comprising gold and at least one coloring metallic element selected from the group consisting of Cu, Fe, Co, and Ti, a gold alloy for black coloring having the composition described above and further comprising at least one alloying element selected from the group consisting of Pt, Pd, Rh, Ir, Ru, Os, Ag, and Ni; a method for the production of a processed article of gold alloy possessing a black surface layer by the steps of shaping the gold alloy mentioned above, heat-treating the shaped gold alloy, and cooling; and processed article of gold alloy obtained by the method.

Abstract: The electrical contact alloy is provided comprising Sb and either Au or Ag or both. In such alloys, Sb produces a non-catalytic effect to inhibit formation of carbon from organic gases derived from resin parts. Therefore, when electrical contacts of such alloys are assembled with resin parts into housings, poor contact due to carbon deposition is prevented to increase the useful life and reliability of the electrical contacts.

Abstract: A high gold content brazing alloy containing titanium is used to braze a platinum electrode to a ceramic cylinder.

Abstract: A fine gold alloy wire of high tensile strength for bonding semiconductor elements is disclosed. The wire consists essentially of 0.0003 to 0.010 wt % of at least one rare earth element selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc and Y, the balance being Au and incidental impurities. The wire does not present a deformed loop and has greater bond strength if it contains 0.0003 to 0.010 wt % of at least one rare earth element of the Cerium Group selected from the group consisting of La, Ce, Pr, Nd and Sm and 0.0001 to 0.0060 wt % of at least one element selected from among Ge, Be and Ca.

Abstract: A metal foil is provided for use in a metal-porcelain dental restoration, which metal foil provides improved color qualities to the finished restoration and improved bonding of the metal to the porcelain. The metal foil is made of an alloy comprising a major amount of gold, an amount of platinum or palladium, and an amount of a non-precious metal. An improved dental veneer and dental bridge can also be made using the metal foil of the invention.

Abstract: The gold wire used for the wire bonding of a semiconductor device comprises at least three kinds of elements selected from rare earth elements such as La, Ce and Pr: Be, Ca, Mg, Ag, Fe: and platinum group elements; and the balance of Au at high purity.

Abstract: A fine gold alloy wire of high tensile strength for bonding semiconductor elements is disclosed. The wire consists essentially of 0.0003 to 0.010 wt % of at least one rare earth element selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu,Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc and Y, the balance being Au and incidental impurities. The wire does not present a deformed loop and has greater bond strength if it contains 0.0003 to 0.010 wt % of at least one rare earth element of the Cerium Group selected from the group consisting of La, Ce, Pr, Nd and Sm and 0.0001 to 0.0060 wt % of at least one element selected from among Ge, Be and Ca.

Abstract: A gold solder matching 14 karat yellow gold. The solder is typically employed in jewelry repair and is comprised of discrete particles of gold alloy and a flux to which a small amount of water is added to provide a fluid, liquid-like, easily worked solder. The gold alloy consists essentially of about 45% silver, about 20% copper, about 25% gold and about 10% brass.

Abstract: A tin-rich gold-tin solder is disclosed which is particularly advantageous for self-aligning applications. When utilized with gold-plated bond locations, the out-diffusion of tin from the solder during heating functions to shift the composition of the remaining solder closer to the eutectic value, thus preserving the liquid state of the solder and improving its reflow quality with respect to conventional eutectic solders.