Abstract: Organic thermistor devices are produced by a first step of molding an organic thermistor material by covering a plurality of electrically conductive members to form a conductor-containing member, which is elongated in a longitudinal direction, has a pair of mutually oppositely facing side surfaces, having the conductive plates buried parallel to one another inside the organic thermistor material, each mutually adjacent pair of these conductive members being externally exposed on different ones of the side surfaces, a second step of forming a pair of electrodes elongated in the longitudinal direction on the side surfaces of the conductor-containing member, and a third step of thereafter cutting this conductor-containing member transversely at specified positions so as to divide into individual units.

Abstract: A method for manufacturing a touch screen linearization pattern which is necessary for a five wire resistive type or current sensing type touch screen, and directly affects the accuracy, production price, and border area size of the touch screen, includes the steps of printing a linearization pattern on the border area of a conductive glass surface with a selected ink. The ink is made by blending highly conductive silver powder between about 59% to 62% in weight and carbon powder between about 14% to 16% in a contact agent solvent between about 24% to 25% in weight. The touch screen thus formed has a resistance value ratio of about ten between the square surface of the glass layer and the two ends of the linearization pattern.

Abstract: A method for adhering a resistive coating to a substrate for use in process fluids employed in the semiconductor processing industry in clean, particle-free, nonreactive, non-trapping, ultra-pure, thermally tolerant, sealed systems. In one arrangement, the method may include the steps of selecting a substrate having a wall, modifying a surface of the wall to provide a roughened texture suitable for mechanically securing a coating thereto, and applying a conductive coating that is configured to be electrically resistive, to extend over at least a portion of the roughened texture, and to adhere thereto throughout variations in operational temperatures thereof.

Abstract: A passive electrical article comprising (a) a first self-supporting substrate having two opposing major surfaces, (b) a second self-supporting substrate having two opposing major surfaces, and (c) an electrically insulating or electrically conducting layer comprising a polymer and having a thickness ranging from about 0.5 to about 10 &mgr;m between the first and second substrate, wherein a major surface of the first substrate in contact with the layer and a major surface of the second substrate in contact with the layer have an average surface roughness ranging from about 10 to about 300 nm and wherein a force required to separate the first and second substrates of the passive electrical article at a 90 degree peel angle is greater than about 3 pounds/inch (about 0.

Abstract: A method of manufacturing a resistor foil, comprised of a copper layer having a first side and a second side. A tiecoat metal layer having a thickness of between 5 Å and 70 Å is disposed on the first side of the copper layer. A first layer of a first resistor metal having a thickness of between 100 Å and 500 Å is disposed on the tiecoat metal layer, and a second layer of a second resistor metal having a thickness of between 100 Å and 500 Å is disposed on the first layer of the first resistor metal. The first resistor metal has a resistance different from the second resistor metal.

Abstract: Precursor compositions for the deposition of electronic features such as resistors and dielectric components and methods for the deposition of the precursor compositions. The precursor compositions have a low viscosity, such as not greater than about 1000 centipoise and can be deposited using a direct-write tool. The precursors also have a low conversion temperature, enabling the formation of electronic features on a wide variety of substrates, including low temperature substrates.

Abstract: Precursor compositions for the fabrication of electronic features such as resistors and capacitors. The precursor compositions are formulated to have a low conversion temperature, such as not greater than about 350° C., thereby enabling the fabrication of such electronic features on a variety of substrates, including organic substrates such as polymer substrates.

Abstract: Precursor compositions having a low conversion temperature and methods for the fabrication of recessed electrical features from the precursor compositions. The electrical features can be conductors, resistors and dielectric features. The precursor compositions are deposited into recessed features, such as trenches, formed in a substrate and are reacted at a low temperature to form electrical features having good electrical and mechanical properties. The substrate can be a low temperature substrate, such as an organic substrate.

Abstract: A method of forming trimmable resistors, resistor ray be embedded into a substrate. A portion of the resistor may be exposed, by segmenting the substrate, so that the resistor may be trimmed to a desired resistance level. Alternatively, a portion of a resistor may be embedded into a substrate, with another portion of the resistor being disposed on the outer surface of the substrate. The portion of the resistor on the outer surface may be trimmed to adjust the resistance of the resistor to a desired level.

Abstract: A thin film made of a cobalt-based oxide represented by YBaCo2O5.5+x (−0.5<x<0.05) is used as a resistor material for a bolometer. Provided is also an infrared sensor having a microbridge structure and using the cobalt-based oxide thin film. The temperature coefficient of the electric resistance thereof can be made large.

Abstract: A method for forming a resistor on a roughened surface for use in process fluids employed in the semiconductor-processing industry as part of a clean, particle-free, nonreactive, non-trapping, ultra-pure, thermally tolerant, sealed system. In one arrangement, the method for forming the resistor includes the steps of selecting a coating for the roughened surface from among the group of resistive materials, roughening a surface to promote mechanical adherence of the coating to the selection of a coating comprising resistive material, roughening a surface for promoting mechanical adherence of the resistive material thereto, and electroplating the resistive material onto the roughened surface to provide a uniformly controllable resistance in the coating.

Abstract: Disclosed is a method of manufacturing a liquid jet recording head by which a thin film composed of an inorganic material can be formed by a conventionally used method such as a printing method and coating method executed in the atmosphere, the method being able to be relatively easily achieved, a head made by the manufacturing method, and a liquid jet recording apparatus including the head and a member for mounting the head. According to this invention, there is provided a liquid jet recording apparatus including a heat acting portion communicating with a liquid jetting orifice for applying thermal energy to a liquid to form a bubble, an electrothermal converter for generating the thermal energy, a heat generating resistance layer contained in the electrothermal converter, and electrode layers for imposing a voltage to the heat generating resistance layer contained in the electrothermal converter, wherein the heat generating resistance layer is composed mainly of an organic resinate.

Abstract: Varistors are produced by pressing ceramic ZnO powder to provide discs, sintering the discs with microwave radiation, and firing outer electrodes with microwave radiation. The sintering has a maximum plateau temperature of 1000° C. to 1300° C. and the duration for ramping to this temperature and maintenance at this temperature is 120 to 180 minutes. These parameters also apply for multi-layer varistors with inner electrodes. The outer electrodes are fired at a maximum plateau temperature of 550° C. to 820° C. for a total duration of 40 to 45 minutes.

Abstract: An inorganic-metal composite body exhibiting PTC behavior at a trip point temperature ranging from 40° C.-300° C., including an electrically insulating inorganic matrix having a room temperature resistivity of at least 1×106 &OHgr;·cm, and electrically conductive particles uniformly dispersed in the matrix and forming a three-dimensional conductive network extending from a first surface of said body to an opposed second surface thereof, wherein the composite body has a room temperature resistivity of no more than 10 &OHgr;·cm and a high temperature resistivity of at least 100 &OHgr;·cm. Preferably, the electrically conductive particles are made of a Bi-based alloy containing at least 50 wt % Bi, and have an average diameter, &phgr;ave, of 5-50 &mgr;m and a 3&sgr; particle size distribution of 0.5 &phgr;ave−2.0 &phgr;ave.

Abstract: An organic vehicle is added to and kneaded with a solid component comprising from 5 to 65% by weight of a resistance material having a composition of CaxSr1−x,RuO3 (x is from 0.25 to 0.75 moles) and from 35 to 95% by weight of a non-reducible glass frit to obtain a resistive paste. A substrate is coated with the resistive paste and fired to produce a resistor. The resistive paste can be fired in a neutral or reducing atmosphere. The resistor has any desired resistance value within a broad range including even high resistance values of higher than 10 K&OHgr;, and the reproducibility of the resistor with a desired resistance value is good.

Abstract: An electrode for a PTC thermistor of the present invention includes a base layer having electrical conductivity and a sintered layer formed on the base layer. The sintered layer is formed by sintering a conductive powder and has electrical conductivity, and has roughness on a surface thereof. Thus, the present invention can provide an electrode for a PTC thermistor that has a large adhesion to the conductive polymer and can be produced easily.

Abstract: Crystal phase V2O3 with x=1.5 in VOx is prepared. Such a lower specific resistance than a desired one as a starting film quality is modified to the final desired specific resistance by heating under an oxidizing atmosphere. A protective film for a bolometer material is formed by physical vapor deposition.

Abstract: A method for forming a thin-film resistor includes forming two insulators on the thin-film resistor, forming contact holes by performing wet etching processes, and forming interconnect and contact plugs at the same time. The invention also provides another method for forming a thin-film resistor that forms a thin-film resistor over the passivation layer instead. That is, forming a thin-film resistor on the top of the device, so that the resistance can be re-modified according to the actual needs.

Abstract: A method of providing nickel barrier end terminations for a zinc oxide semiconductor device with exposed body surfaces and end terminal regions, in which the device is controllably reacted with a nickel plating solution only on an exposed end terminal region and thereafter provided with a final tin or tin-lead termination.

Abstract: The invention aims at providing highly reliable zinc oxide varistors through simple production steps. The varistor is produced by dispersing a powdery raw material comprising 1-40 solar % (in terms of Fe2O3) iron, 0-20 molar % (in terms of Bi2O3) bismuth, and the balance consisting of SiO2 in a solution of a water-soluble binder such as polyvinyl alcohol, and applying the formed dispersion to a molded or calcined zinc oxide varistor to form on the lateral face thereof a lateral high-resistance layer (2) containing Zn2SiO4 as the principal ingredient and a solid solution of iron in Zn7Sb2O12 as the auxiliary ingredient.

Abstract: Resistors are formed by selective etching from layered thin film material comprising an insulating substrate, a resistive material which is a mixture of a zero valence metal and a dielectric material, and a layer of conductive material.

Abstract: A method for forming a ruthenium-based thick-film resistor having copper terminations, in which the thick-film resistor is fired in a non-oxidizing atmosphere so as not to oxidize the copper terminations yet without reducing the thick-film resistor to metallic ruthenium. A ruthenium-based thick-film resistor ink having a matrix material and an organic vehicle is deposited on a copper layer that will form the terminations for the thick-film resistor formed by firing the ink. The organic vehicle of the ink is then burned out at a temperature of less than 350° C. in an oxidizing atmosphere, such as air. Thereafter, the ink is fired in a non-oxidizing atmosphere (e.g., nitrogen) at a temperature sufficient to sinter the matrix material and yield a ruthenium-based thick-film resistor with copper terminations formed by the copper layer.

Abstract: A process for forming a thick-film resistor whose dimensions can be accurately obtained, thereby yielding a precise resistance value. The method includes providing on a substrate a photoimageable layer that preferably forms a permanent dielectric layer of a multilayer structure. An opening is photodefined in the surface of the photoimageable layer, and then overfilled with an electrically-resistive material to form a resistive mass having an excess portion that lies on the surface of the photoimageable layer surrounding the opening. Following curing which causes the surface of the resistive material to become recessed below the surface of the photoimageable layer, the excess portion of the resistive mass is removed, preferably by abrading or a similar operation, such that the lateral dimensions of the resistive mass are determined by the lateral dimensions of the opening in the photoimageable layer.

Abstract: Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

Abstract: Zinc oxide ceramics and a method for producing the same are provided wherein zinc oxide varistors for low and high voltages having excellent electric characteristics and high reliability upon DC loading and surge can be obtained in high yield by low-temperature sintering. 0.2 to 20 parts by weight of a mixed powder of bismuth oxide, titanium oxide and antimony oxide is treated in advance at a temperature of 850.degree. C. or less. The synthetic powder thus obtained is added to 100 parts by weight of ZnO material powder to produce ceramics. By using the ceramics for a zinc oxide varistor, a zinc oxide varistor for a low or high voltage can be produced in high yield, which can be sintered at a low temperature and is excellent in electric characteristics and reliability upon DC loading and surge. Aluminum is sprayed on both sides of a sintered body so that an aluminum layer is formed. Copper is sprayed on the aluminum layer so that an electrode is formed. A lead wire is bonded to the electrode.

Abstract: Electroceramic component having a component body (10), connection metallization coatings (2, 3) and also a protective encapsulation (15 to 18) made of two different materials on in each case two mutually opposite areas of the component body (10) which are free from the connection metallization coatings (2, 3).

Abstract: A method for providing a resistive focusing lens structure for an electron beam device including forming a suspension of particles of a mixture of, by weight, of about 33-50% of an oxidic conductive material including about 40-60% of a lead ruthenate, about 25-38% of a lead titanate and about 2-15% of a ruthenium oxide, and of about 50-67% of a glass including about 30-40% of silicon dioxide (SiO.sub.2), about 3-7.5% alumina (Al.sub.2 O.sub.3), and about 53-67% of lead oxide (PbO) in a suspending medium consisting essentially of a non-acidic liquid having a boiling point of less than 150.degree. C., applying the suspension to an inside surface of a glass member to thereby provide a coating of the particles on the inside surface, firing the coating at a temperature of 700-900.degree. C. and before of after firing the coating, patterning the coating. The present method provides highly reproducible resistive focusing lens structures.

Abstract: A resistor may be embedded into a substrate. A portion of the resistor may be exposed, by segmenting the substrate, for instance, so that the resistor may be trimmed to a desired resistance level. Alternatively, a portion of a resistor may be embedded into a substrate, with another portion of the resistor being disposed on the outer surface of the substrate. The portion of the resistor on the outer surface may be trimmed to adjust the resistance of the resistor to a desired level.

Abstract: A method for protecting porous components immersed in insulating liquid and subjected to high voltage. The method involves impregnating the components in a heated bath of polymerisable fluid resin wherein the polymerization occurs after the fluid resin penetrates the pores of the porous components.

Abstract: Electrostatic discharge protection or electromagnetic interference shielding is provided by applying a composition comprising a thermoset or thermoplastic polymeric matrix, and a conductive filler component, where said filler component comprises electrically conductive particles and at least one conducting polymer to a dielectric substrate.

Abstract: A positive temperature coefficient (PTC) resistor composition, comprising: (a) about 3% to about 75% by weight of a binder resin, (b) about 0.5% to about 70% by weight of a temperature activatable semicrystalline polymer, which is a thermoplastic elastomer (TPE) that melts at a relatively narrow temperature range to change from a crystalline state to an amorphous state, (c) about 10% to about 80% by weight of an electrically conductive material in finely particulated form selected from the group consisting of silver, graphite, graphite/carbon, nickel, copper, silver coated copper, and aluminum, (d) about 0.01% to about 80% by weight of solvent material for the composition.

Abstract: Resistor material such as polysilicon is deposited on the insulating surface of a substrate and patterned to form resistor layers disposed generally parallel. Another resistor material such as polysilicon is deposited filling each space between adjacent resistor layers, with an insulating film being interposed between the upper and lower resistor materials, and etched back to form other resistor layers at respective spaces. After an insulating film is formed covering the resistor layers, contact holes are formed in the insulating film. A conductive layer is deposited and patterned to serially connect the resistor layers.

Abstract: Resistors for a printed circuit board and methods for making are provided using thermal transfer techniques to transfer coating material having some degree of electrical conductivity from a thermal transfer ribbon to the printed circuit board. Parts of the coating material transferred to the printed circuit board form resistors having varying resistances based on the geometry of the material transferred. Multiple ribbons having coatings with varying degrees of electrical conductivity may also be used to provide greater variances in resistor values obtainable.

Abstract: The present invention relates a method for manufacturing high-temperature thermistor materials having stable thermistor properties and to a high-temperature thermistor. According to this method the thermistor material is obtained by mixing powders of (Mn.Cr) O.sub.4 spinel powder and Y.sub.2 O.sub.3 powder and firing the mixed powder at a temperature in a range of 1400.degree. to 1700.degree. C., so as to cause the components of the mixture to react with each other, thereby generating (Mn.sub.x.Cr.sub.y) O.sub.4 spinel and Y(Cr.Mn) O.sub.3 perovskite.

Abstract: Method and apparatus for manufacturing a heater roller which includes a cylindrical electrically insulating substrate having an outer circumferential surface, and an electrically resistive heat generating layer formed on the substrate for heating a desired member in evenly pressing contact with that member, wherein an electrically resistive paste for forming the electrically resistive layer is delivered from a paste delivery tube of a paste delivery device onto the outer circumferential surface of the substrate, while the cylindrical substrate is rotated about its axis and while the paste delivery device and the electrically insulating substrate are fed relative to each other in the axial direction of the cylindrical substrate, such that the relative feeding speed is controlled in relation to the relative position of the paste delivery device and the substrate in the axial direction of the substrate, within a range that permits formation of a film of the electrically resistive paste on the substrate, which fi

Abstract: The invention relates to a hybrid RC element and to a simple method of manufacturing such an element. The inventive hybrid RC element comprises a capacitor body and a resistor body. Said element is characterized in that it includes a block-shaped, ceramic capacitor body which is provided with a contact layer on two parallel surfaces, and in that a block-shaped, ceramic resistor body is provided on one of said contact layers, the surface of the resistor body facing away from the capacitor body also being provided with a contact layer. The resistor body is preferably made from doped Si. The inventive hybrid RC element is very suitable for applications in which the element is exposed to high voltage pulses (1 kV or more). Unlike the known hybrid RC elements, the element in accordance with the invention is not subject to short-circuits under these conditions.

Abstract: Alternate formation of high-resistance and low-resistance layers form a thin film with reduced dopant gradient in its thickness. A desired sheet resistance is attained by adjusting the thickness of the stacked layers, the degree of doping of the film, and the number of layers used to make the thin film during the film formation process.

Abstract: The present invention provides a new and improved thick film paste for use as an acid resistant overglaze. In one preferred embodiment such paste includes a glass composition comprising in weight percent from about 30% to about 60% PbO, from about 5% to about 20% ZnO, from about 2% to about 20% B.sub.2 O.sub.3, from about 4% to about 12% Al.sub.2 O.sub.3, from about 5% to about 18% SiO.sub.2, up to about 8% ZrO.sub.2, up to about 8% TiO.sub.2 and from about 9% to about 21% Nb.sub.2 O.sub.5.

Abstract: Air pollution gas sensor which efficiently detects smell from smoking, ordinary stinks such as TMA and CH3SH, smell of Kimchi, acetaldehyde, and etc. and also a method for fabricating the same is revealed and described including a substrate, a heater formed on said substrate, electrodes each formed on said substrate insulated from the heater, and a sensing layer formed of SnO.sub.2, including WO.sub.3 on said substrate including said electrodes, with the method for fabricating the gas sensor including the steps of forming the heater on the substrate, forming the electrodes on the substrate insulated from the heater, and forming a sensing layer of SnO.sub.2 including WO.sub.3 on the substrate including the electrodes.

Abstract: A ceramic resistor comprising chiefly an aluminum nitride, and an electrostatic chuck using the ceramic resistor as a resistor layer. The ceramic resistor comprises chiefly an aluminum nitride crystal phase, and is doped with at least one kind of atoms selected from the group consisting of elements of the Groups 2b, 4b and 6b of periodic table, and exhibits a volume resistivity of not larger than 10.sup.14 .OMEGA.-cm at 25.degree. C.

Abstract: The present invention permits solder joints to be made directly to via and through holes without the solder being wicked into the vias or through holes, by filling plated through holes with an epoxy or cyanate fill composition. When cured and overplated, the fill composition provides support for the solder joint and provides a flat solderable surface for the inter-connection. In certain embodiments, the cured fill compositions, offer a further advantage of being conductive. The invention also relates to several novel methods for filling through holes with such fill compositions, and to resistors located in through holes and vias.

Abstract: A thick-film switch element includes a high-temperature glass frit fused to a non-conductive substrate. A cermet layer having a low-temperature glass matrix is fired in a conventional furnace to sink into the glass frit layer such that the resulting thickness of the switch element layer is approximately equal to the original thickness of the glass frit layer. The wet print thickness of the cermet layer is controlled upon application of the cermet to the glass frit. The glass frit and cermet are fired at a controlled temperature and duration to achieve a fired print thickness of the cermet above the surface of the glass frit having a pre-determined value. In one embodiment, the non-conductive substrate is a metal, such as stainless steel.

Abstract: A resistive element is provided which is used on a cathode conductor side of a field emission type fluorescent display device and made of a hydrogenated amorphous silicon film. Nitride is added during deposition of the hydrogenated amorphous silicon film containing an impurity for controlling resistivity of the film. A method for producing the resistive element and an apparatus therefor are also disclosed.

Abstract: A thin-film resistor comprising a mixture of rhodium (Rh) oxide as a resistive material, and at least one element M selected from the group consisting of silicon (Si), lead (Pb), bismuth (Bi), zirconium (Zr), barium (Ba), aluminium (Al), boron (B), tin (Sn), and titanium (Ti), wherein M/Rh, or the ratio of the number of element M atoms to that of rhodium (Rh) atoms is in the range of 0.3 to 3.0. Thin-film resistor is formed from the process of preparing a solution of an organometallic material, coating the material on a substrate, drying and then firing the material at a peak temperature not less than 500.degree. C.

Abstract: The invention is a method and apparatus for a pirani pressure sensor. The apparatus consists of a current supply and current receiving means affixed to a substrate. Bridging the current supply means and current receiving means is an electrically conductive polymer. The pirani pressure sensor may be made using conventional photolithographic techniques.

Abstract: A process for making an infra-red detector array wherein an array of m * n first electrodes is formed on a substrate and a layer of plastic material having a polarization sensitive to infra-red radiation is deposited over the electrodes. The layer is partitioned into individual films each over an associated first electrode and second electrodes are positioned on the films on the side opposite to the associated first electrodes.

Abstract: A method of providing a semiconductor device with an inorganic electrically insulative layer, the device having exposed semiconductor surfaces and electrically conductive metal end terminations, in which the device is reacted with phosphoric acid to form a phosphate on the exposed surfaces of the semiconductor but not on the metal end terminations, and in which the device is thereafter barrel plated in a conventional electrical barrel plating process and the plating is provided only on the end terminations because the phosphate is not electrically conductive.

Abstract: A method is provided for easily producing thick multi-layer substrates maintaining highly accurate resistances with little variation. A thick-film resistor 6 on a ceramic substrate 1 is fired at a temperature higher than the temperature of firing a glass insulating layer 2 that is formed thereon in contact therewith. This makes it possible to decrease the change in the resistance in a subsequent high-temperature step of firing the glass insulating layers 2 to 4. Moreover, after the glass insulating layer 2 is formed on the thick-film resistor 6 on the ceramic substrate 1, laser trimming is effected through a window or the glass insulating layer 2 and, thereafter, the glass insulating layers 3 and 4 are formed. This makes it possible to decrease the change in the resistance of the thick-film resistor 6 after laser trimming and to reduce the laser output.

Abstract: A method of making varistor chips is disclosed. A workpiece of varistor material is sliced into slices of varistor material. The slices are in turn diced to make the varistor chips. The chips are etched in an etchant such as dilute citric acid to remove from their surfaces varistor material damaged during the slicing and/or dicing operations. Otherwise, the damaged varistor material adversely affects the leakage current characteristics of the varistor chips.

Abstract: A collinear terminated transmission line structure and method for producing same is presented. The structure comprises a plurality of conductors electrically connected to a plurality of resistors. A predetermined spacing between each of the plurality of conductors ranges from 2 mils to 7 mils. Greater spacings are easily accomplished with the present method. The method comprises the steps of screen-printing a resistor swath onto a substrate, the swath being adjacent to one end of the plurality of conductors. After the substrate is dipped into a solution, the resistor swath is laser trimmed to form the plurality of resistors. The substrate is then rinsed with warm water to remove the solution. The solution can be a poly-vinyl alcohol and isopropyl alcohol mixture.