Abstract: A potentiometric linear position sensor including a housing (10) made of extruded aluminum which may be cut to preferred lengths (15). The sensor includes a Kapton film substrate (32) having first a uniform coating of resistive material (34) disposed thereon, and then distinct islands formed by laser sculpting. Conductive material (50, 53, 55, 56, 57, 58), screen printed upon the resistive material before or after the laser sculpting, is connected to terminals (62, 68, 70) for the respective electrical elements (48, 51, 55). The flexible Kapton film substrate (32) is inserted endwise into the housing (10) with the side edges of the substrate curled upwardly and captured within longitudinal housing slots (28, 29) disposed along opposite housing walls (14, 16).

Abstract: An electroconductive paste consists essentially of 100 parts by weight of zinc in finely divided form, from about 0.01 to 10.00 parts by weight of a glass frit such as, typically, that of PbO-B.sub.2 O.sub.3 -SiO.sub.2 composition, and a vehicle such as alpha-terpineol containing ethylcellulose as an organic binder, for pasting the mixture of the zinc powder and the glass frit. The paste may contain an additive or additives such as the oxides of some metallic elements. By being baked on ceramic bodies at a temperature above the melting point of zinc, the paste forms conductors or electrodes of ceramic capacitors, varistors or the like. The capacitors or varistors having their conductors or electrodes thus prepared from the zinc paste are approximately equivalent in electrical and mechanical properties to those having their conductors or electrodes fabricated from a conventional silver paste.

Abstract: A substrate and method of manufacture wherein a substrate is molded from particulate material wherein grooves on and through the body are formed during substrate molding and prior to sintering. The substrate includes all buss structure molded therein. Cooling of chips is provided by providing a heat sink in grooves formed within a substrate and beneath the chips. Microcircuits are formed by disposing on the substrate and interconnecting via buss structures on the substrate various semiconductor dies with encapsulation of some or all of the substrates and components thereon, if desired. In addition, connection from the board to external circuits is available by means of an edge connector.

Abstract: Disclosed is a method for making glass bonded metal oxide electric resistors involving including in the mixture a refractory oxide for providing configuration stability during firing.

Abstract: Disclosed is a method of forming a precision integrated resistor element on a semiconductor wafer whose resistance value accurately corresponds to its nominal design value. The method comprises forming a resistor body in combination with a test resistor structure by conventional ion implantation or diffusion of suitable dopant in selected regions of the wafer. Then, by measuring the resistance(s) and width(s) of the test structure the variation .DELTA..rho..sub.s in sheet resistance and variation .DELTA.W in width due to process and image tolerances, respectively, are determined. Next, using .DELTA..rho..sub.s and .DELTA.W the adjustment in length .DELTA.L necessary to match the resistance of the resistance element with the nominal design value is calculated. Finally, this information (.DELTA.

Abstract: Articles, such as electrical circuits or elements, are encapsulated by melting polyarylene sulfide in combination with at least one print compound such as monazo-nickel complex, lead chromate-lead molybdate, quinacridone, Ni--Sb--Ti, Co--Zn--SiO.sub.2 or lead chromate, injecting this molten composition around the article to be encapsulated, and cooling and solidifying the molten composition. The articles may latter be laser printed.

Abstract: Thick film resistor composition which is a dispersion of (a) a conductive phase of a nonprecious metal pyrochlore and SnO.sub.2, (b) inorganic binder and (c) CoCrO.sub.4 and/or NiCrO.sub.4 in (d) organic medium. The metal chromate functions as a TCR driver.

Abstract: The invention is directed primarily to a method of doping tin oxide with Ta.sub.2 O.sub.5 and/or Nb.sub.2 O.sub.5 using pyrochlore-related compounds derived from the system SnO-SnO.sub.2 -Ta.sub.2 O.sub.5 -Nb.sub.2 O.sub.5 for use in thick film resistor compositions. The invention is also directed to thick film resistors containing the above-described pyrochlore-related compounds and to various compositions and methods for making such thick film resistors.

Abstract: A composition for making electrical resistance elements including a conductive component which comprises(a) a precious metal oxide of the formula A'.sub.1-x A".sub.x B'.sub.1-y B".sub.y O.sub.3, wherein when A' is Sr; A" is one or more of Ba, La, Y, Ca and Na, and when A' is Ba, A" is one or more of Sr, La, Y, Ca and Na; B' is Ru; B" is one or more of Ti, Cd, Zr, V and Co, O<x<0.2; O<y<0.2;(b) a binder component which comprises(i) between 40 weight percent and 75 weight percent C', wherein C' is SrO when A' is Sr, C' is BaO when A' is Ba, and C' is SrO+BaO when A' is Sr and A" is Ba and when A' is Ba and A" is Sr,(ii) between 20 weight percent and 35 weight percent B.sub.2 O.sub.3,(iii) between 2 weight percent and 12 weight percent SiO.sub.2, and(iv) between 0.5 weight percent and 6.5 weight percent ZnO. The method of the present invention includes mixing the conductive component and binder as described above with an organic vehicle.

Abstract: The invention relates to a display using a varistor as the switching element for controlling the orientation of molecules forming a liquid crystal layer. It relates to providing the connections to the elementary cells on an insulating substrate and to forming on said connections varistor contact pieces ensuring a threshold control of the said cells.

Abstract: A thick film temperature sensitive device and method of making the same, comprising the steps of applying to the surface of a substrate and firing a resistance material comprising a mixture of glass frit and particles containing palladium and iron. The mixture is fired in a non oxidizing, neutral, or reducing atmosphere at a temperature between 700.degree. C. and 1100.degree. C. at which the glass frit softens. When cooled, a device is provided with a glass film strongly bonded to the substrate and having dispersed therein conductive metal particles of an alloy of palladium and iron. The device provides a relatively high positive temperature coefficient of resistance, a relatively high resistivity, and a resistance to temperature characteristic which is highly linear, and can be processed by spiralling and terminated by the use of electroless plating.

Abstract: Thick-layer hybrid electronic printed circuits are formed by printing predetermined circuit pattern onto an insulating substrate by deposition of predetermined ink pattern thereupon, advantageously by silk-screening or masking, and then baking said ink circuit pattern, and repeating the deposition/baking steps as required, the subject forming process featuring use of an insulating ink comprising a non-conductive metallic oxide extender, desirably cuprous oxide, which ink is thus either potentially conductive or potentially resistive, and the development of such conductivity or resistivity, after baking, by treating the ink pattern with a reducing agent, desirably a borohydride, as to readily and quantitatively convert said metal oxide into a conducting metal.

Abstract: A composition for the preparation of thick film resistors comprising an admixture of finely divided particles of a conductive metal hexaboride and a crystallizable glass frit which is irreducible by the metal hexaboride containing at least 5 mole % of Ta.sub.2 O.sub.5 which is reducible by the metal hexaboride under normal firing conditions.

Abstract: Improved thin film resistors and electrical devices and circuits with thin film resistors are fabricated utilizing a chromium, silicon, and nitrogen compound formed preferably by rf reactive sputtering of chromium and silicon in a nitrogen bearing atmosphere. An annealing step is used to produce time-stable resistance values and in combination with variations in the partial pressure of nitrogen during sputter deposition to control the temperature coefficient of resistivity to have positive, negative or zero values.

Abstract: A method is disclosed for making a titanium dioxide element which can be used as an oxygen sensing element. The method includes obtaining a substrate for supporting a titanium dioxide film and placing that substrate in a vacuum chamber. A vacuum is drawn on the vacuum chamber and the chamber is heated to a temperature in a range from 400.degree.-700.degree. C. A low pressure carrier gas containing 1-10% by volume of oxygen along with a coating gas formed from an organometallic compound of titanium is flowed over the substrate. The coating gas is one which is heat decomposable into a titanium dioxide coating on the heated substrate. The coating gas and the carrier gas are at a total pressure from 100-200 Pa. The coating gas and carrier gas are flowed over the substrate until a titanium dioxide film of required thickness is built up. After formation of the required thickness of the titanium dioxide film, the substrate is removed from the vacuum chamber and heated to a temperature in a range from 800.degree.

Abstract: A metal oxide varistor with controllable breakdown voltage and capacitance characteristics is fabricated by controlled diffusion of lithium into conventional metal oxide varistor material at elevated temperature. The varistor layer containing lithium exhibits an increased breakdown voltage, lowered capacitance, and low leakage current while maintaining a high coefficient of nonlinearity.

Abstract: A highly multiplexed liquid crystal display employs nonlinear varistor elements exhibiting a particularly low capacitance value to effectively drive individual liquid crystal cells. Low varistor capacitance is achieved through controlled addition of Sb.sub.2 O.sub.3 during varistor manufacture.

Abstract: An improved polycrystalline silicon resistor having limited lateral diffusion, integrated circuits containing such resistors, and a method of their preparation is disclosed. The polysilicon resistor is formed by first doping the polysilicon layer with a p or n type impurity and thereafter neutralizing the treated layer with impurities of the other type so as to form a device wherein the concentration gradient between the resistor region of the aforesaid layer and its environment is low. The low concentration gradient reduces lateral diffusion during manufacture, thereby permitting manufacture of integrated circuits of higher circuit density and resistors with smaller dimensions, lower temperature coefficients and higher reliability.

Abstract: Methods for producing thermistors having predetermined resistance values at predetermined temperatures are disclosed.

Abstract: Single crystal dielectrically isolated islands are formed providing an opening in the bottom dielectric isolation of selected islands before the application of the polycrystalline support. Thin film resistor material is formed and delineated on an insulative layer over the single crystal island juxtaposed with the opening of the bottom dielectric isolation. The thin film resistive layer is trimmed using a laser.

Abstract: A ceramic multilayer circuit board is provided by sintering a multilayer wiring substrate containing alumina as a main component, which was prepared by the green sheet process, nickel plating and gold plating in this order on the superficial wiring conductor layer, printing a thick film conductor paste on the gold plating layer, firing the printed substrate and finally printing a thick film resistor paste on at least part of the thick film conductor layer and firing to form a thick film resistor layer.

Abstract: An electroconductive paste consists essentially of 100 parts by weight of zinc in finely divided form, from about 0.01 to 15.00 parts by weight of an organic titanium compound such as, typically, tetrakisstearoxytitanium, and a vehicle, such as alpha-terpineol containing ethylcellulose as an organic binder, for pasting the mixture of the zinc powder and the organic titanium compound. The paste may contain an additive or additives such as the oxides of some metallic elements. By being baked on ceramic bodies at a temperature above the melting point of zinc, the paste forms conductors or electrodes of ceramic capacitors, varistors or the like. The conductors or electrodes thus prepared from the zinc paste are approximately equivalent in electrical and mechanical properties to those fabricated from the familiar silver paste.

Abstract: Diffusing boron-containing glass, such as bismuth borosilicate glass, into conventional sintered zinc oxide based varistor material reduces varistor material intrinsic capacitance. In the method, a layer of glass powder is screen-printed, painted, or otherwise applied to the varistor material surface. Upon firing, a portion of the glass diffuses into the material, while the remainder creates an insulating layer on the varistor material surface which may be removed by grinding. The varistor material may then be annealed to restore varistor electrical properties which may have been degraded by mechanical damage caused by the grinding. Device electrodes are attached by conventional means.

Abstract: Low value resistor inks comprising a conductive component consisting of stannous oxide and molybdenum trioxide or a mixture of molybdenum trioxide and metallic molybdenum; a glass powder selected from the group consisting of a barium aluminum borate glass and a barium calcium borosilicate glass; and a suitable organic vehicle are improved by the addition of a TCR modifier. Cadmium oxide is added to raise the TCR value of the subject resistor inks, and ferric oxide, vanadium oxide or mixtures thereof is added to lower the TCR value thereof.

Abstract: Solderable, largely base metal electrodes for metal oxide varistors are fabricated by screen printing an electrically conductive, air-fireable base metal composition on a varistor material substrate. A distributed fine noble metal array is screen printed over the screened base metal and the varistor heated in air at a temperature of between approximately 500.degree. C. and 800.degree. C. The varistor leads are easily solderable to the noble metal array.

Abstract: An electrical resistor family based on oxides of tungsten and/or molybdenum is prepared by combining a polymeric binder with such oxides in an appropriate amount to realize the desired bulk properties. The resistance of the composite can be varied by varying the metal content of the oxides and/or by appropriate combination of the various oxides. Inert fillers are not required and the bulk properties are more stable.

Abstract: A gas sensor element for detecting the presence of a flammable gas comprises an electrical resistance filament surrounded by a bead which is formed by an array of alumina particles interspersed between and bound together only by particles of a catalyst for inducing catalytic oxidation of flammable gases to form an open porous gas diffusive skeletal matrix having a mean particle size of less than 20 nm. When the bead includes such a matrix, the number of active sites at which catalytic oxidation of flammable gases can take place is greatly increased with the result that the sensor element is very resistant to poisoning by atmospheric contaminants such as traces of silicone and sulphur compounds. The sensor thus has a very much longer life and does not require such frequent recalibration.

Abstract: Improved air-fireable resistor and conductor inks useful in constructing multilayer integrated circuits on porcelain-coated metal substrates are provided. The subject inks comprise a barium calcium borosilicate glass frit, a suitable organic vehicle, and a functional component, i.e., ruthenium dioxide, in the resistor inks and one or more precious metals plus bismuth oxide in the conductor inks.

Abstract: Thin film electrical resistors comprised of a substantially homogeneous amorphous chromium-silicon-oxygen alloy having an empirical formula of Cr.sub.x Si.sub.y O.sub.z wherein X is a number in the range of about 0.3 to 0.39, y is a number in the range of about 0.4 to 0.52 and x is a number in the range of about 0.1 to 0.30, with the proviso that some of x, y and z is equal to 1. Such resistors exhibit a relatively high ohmic resistance in the range of about 2,000 to 16,000 .mu..OMEGA..multidot.cm.

Abstract: A high voltage varistor for DC operation is manufactured by applying a glass collar to the perimeter of a sintered zinc oxide disc and heat treated between about 750.degree. C. and 400.degree. C. for several cycles in air. After heat treating, an organic resin or ceramic coating is applied to the glass collar to further insulate the varistor for high voltage application.

Abstract: A low-cost conductor, e.g. a printed circuit, is prepared by applying a mixture of a metallic powder and polymer on a substrate and curing the polymer, followed by an augmentation replacement reaction being effected to replace some of the metallic powder with a more noble metal in such a way that the total volume of deposited metal on the surface exceeds that of the original metal powder at that surface. This procedure produces contiguous layer of conducting metal on the substrate. The conductors thus formed can easily be soldered without leaching using a conventional tin-lead solders.

Abstract: Improved thick-film overglaze inks useful in constructing multilayer integrated circuits on circuit boards, particularly porcelain-coated metal circuit boards, are provided. The subject inks comprise: a glass consisting of lead oxide, a modifier component consisting of the oxides of cadmium, zinc, barium and antimony and a glass-forming component consisting of aluminum oxide, boron trioxide and silicon dioxide; a suitable organic vehicle and, if desired, a colorant oxide.

Abstract: A vitreous enamel resistor material comprising a mixture of a vitreous glass frit and fine particles of tin oxide (SnO.sub.2). An electrical resistor is made from the resistor material by applying the material to a substrate and firing the coated substrate to a temperature between about 850.degree. C. and 1150.degree. C. at which the glass melts. Upon cooling, the substrate has on the surface thereof, a film of the glass having the particles of the tin oxide embedded therein and dispersed therethroughout. The resistor material provides a resistor having a resistivity within a wide range and a low temperature coefficient of resistance.

Abstract: A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Abstract: A geometry and method of fabricating thin film resistors which are tolerant of faults in the film and therefore permit attainment of high resistances. The resistor includes a series of connected closed loops (15) each with a member (17) providing a short circuit path. Such members are successively cut and the change in resistance is determined after each cut. This change is compared to certain threshold values to determine the presence or absence of an open circuit fault in each loop. The resistor is then trimmed to its desired value by cutting only the loops where no opens have been discovered.

Abstract: Miniature electronic component parts such as capacitors or resistors are end conductively coated by use of a part handling plate having a multiplicity of passageways therethrough with walls coated by resilient material to grip the parts. A bank of pins in a press (a) are used to move the parts in the passageways, (b) are used to load the parts into the passageways through the use of a loading plate housing part receiving openings filled with parts by the use of vibration equipment, and (c) are used to discharge the parts from the passageways into the recesses of an unloading plate. The parts are moved in the passageways first to expose one end to be coated and then second to expose the other end of the parts to be coated.

Abstract: Improved indium oxide resistor inks useful in constructing multilayer integrated circuits, particularly on porcelain-coated metal substrates, are provided. The subject inks, which are characterized by an improved temperature coefficient of resistance (TCR), comprise: indium oxide, magnesium oxide as a TCR controlling agent, a barium calcium borosilicate glass frit and a suitable organic vehicle.

Abstract: Improved resistor inks useful in constructing multilayer integrated circuits, particularly on porcelain-coated metal substrates, are provided. The subject inks comprise: a conductive component consisting of stannous oxide and molybdenum trioxide or a mixture of molybdenum trioxide and metallic molybdenum; a glass powder selected from the group consisting of a barium aluminum borate glass and a barium calcium borosilicate glass; and a suitable organic vehicle.

Abstract: A vitreous enamel resistor material comprising a mixture of a vitreous glass frit and fine particles of tin oxide (SnO.sub.2). An electrical resistor is made from the resistor material by applying the material to a substrate and firing the coated substrate to a temperature at which the glass melts. The tin oxide is preferably heat treated prior to mixing with the glass frit. Upon cooling, the substrate has on the surface thereof, a film of the glass having the particles of the tin oxide embedded therein and dispersed therethroughout. The resistor material provides a resistor having a wide range of resistivity and a low temperature coefficient of resistance.

Abstract: A method of fabricating film circuits whereby thick film crossunders may be included with thin film capacitors (22) on a single substrate (10). At least one dielectric layer (12) is formed on the crossunder electrode (11) and a layer capable of smoothing irregularities (13) is also formed in the area of capacitor formation. Firing of the capacitor underlayer is compatible with the dielectric layer. A layer such as beta tantalum (14) is formed over essentially the entire circuit and etched from the contact areas (21) of the crossunder electrode. The layer is oxidized to form a protective layer (15) for the previously deposited layers as well as an underlay for subsequently formed thin film components.

Abstract: There is provided a method of making a non-linear voltage-dependent resistor containing a ZnO element including zinc oxide as its major component by forming or coating a layer of high insulation material on the element. The layer is formed due to a vapor-solid reaction in the atmosphere of a vaporizable molecular compound containing Sb.sub.2 O.sub.3, Bi.sub.2 O.sub.4 or SiO.sub.2 at a sintering temperature. Preferably, the layer is formed due to a vapor-solid reaction in the atmosphere of a vaporization retarding compound containing ZnO, or SiO.sub.2 in addition to the vaporizable molecular compound at a sintering temperature within a sintering vessel.

Abstract: A gas sensing device comprises a gas sensing element comprising a gas-sensitive resistive film formed of an aggregate of ultrafine particles of a suitable material deposited on the surface of a substrate of an electrical insulator formed with electrodes. In a method of manufacturing such a gas sensing device, a gas-sensitive material is evaporated in a gas atmosphere to provide the gas-sensitive resistive film of ultrafine particles of the material.

Abstract: Resistor composition comprising an admixture of finely divided particles of (a) ruthenium-based conductive material, (b) inorganic binder and (c) a manganese vanadate compound.

Abstract: A free-standing, thick-film varistor is fabricated by screen printing on a smooth aluminum oxide substrate an unfired standard varistor powder mixed with a suitable organic carrier and heating the printed varistor at high temperature (1000.degree. C.-1400.degree. C.). The fabricated varistor adheres lightly to the insulating substrate and may be easily separated therefrom. The insulating substrate may be reused.

Abstract: A vitreous enamel resistor material comprising a mixture of a vitreous glass frit, an insulating material containing an oxide of zirconium, and a conductive phase of fine particles of tin oxide. The insulating material is selected from the group consisting of zirconia (ZrO.sub.2), calcium zirconate (CaZrO.sub.2), barium zirconate (BaZrO.sub.3) and strontium zirconate (SrZrO.sub.3), and the conductive phase may also contain an additive such as tantalum oxide. An electrical resistor is made from the resistor material by applying the material to a substrate and firing the coated substrate to a temperature at which the glass softens. Upon cooling, the substrate has on the surface thereof a film of glass and insulating material having the particles of the conductive phase embedded therein and dispersed therethroughout. The resistor material provides a resistor having relatively high resistivity as well as rugged physical characteristics.

Abstract: An apparatus and process for producing fired resistors having uniform resistance characteristics, wherein a continuous closed-loop feedback network detects deviations from standard resistivity values and continuously corrects the composition by varying the proportions of high and low resistance material ratios or blends of such materials being screened onto the substrates (212), and detects deviations in screened-on film thickness for continuously correcting either the speed of operation of a screener assembly (No. 1, No. 2) or the squeegee head pressure in order to obtain a predetermined film thickness. The process continuously adjusts the fired resistance values through on-the-production-line control of mixture ratios of high and low resistive paints, to produce final fired resistors (170) having the required resistance values, temperature coefficients of resistivity, improved stability, and improved TCR tracking values.

Abstract: A method of making a thin nickel film temperature sensitive device with a relatively high positive temperature coefficient of resistance utilizing a film of nickel deposited from a bulk nickel source onto an electrically insulating substrate, and device made thereby including the step of heat treating a resistor element having a thin film of nickel deposited on an electrically insulating substrate by heating in a reducing atmosphere to a peak temperature of at least 550.degree. C., over a heating cycle of at least about 20 minutes. The nickel film of the heat treated resistor element has a selected temperature coefficient of resistance which is at least 60% of the value of the coefficient for the bulk nickel and a sheet resistance of at least one ohm per square which properties are determined by the heat treating temperature and cycle time, and the thickness of the nickel film.

Abstract: A vitreous enamel resistor material comprising a mixture of a vitreous glass frit and fine particles of tin oxide (SnO.sub.2). An electrical resistor is made from the resistor material by applying the material to a substrate and firing the coated substrate to a temperature at which the glass melts. The tin oxide is preferably heat treated prior to mixing with the glass frit. Upon cooling, the substrate has on the surface thereof, a film of the glass having the particles of the tin oxide embedded therein and dispersed therethroughout. The resistor material provides a resistor having a wide range of resistivity and a low temperature coefficient of resistance.

Abstract: A unitary thick film resistor structure includes a first thick film resistor element formed on one face of a substrate and a second thick film resistor element formed on the opposite face of the substrate. The resistor elements are of complementary, substantially equal and opposite temperature coefficient of resistance characteristics such that when the two elements are connected in parallel to form a unitary structure, the opposite temperature coefficient characteristics provide a stable, mutually compensated low net temperature coefficient of resistance, and exhibiting an immunity to subsequent baking operations incident to the provision of a sintered protective outer coating.

Abstract: A method for producing a thick film circuit (30) including a copper conductor pattern (19), thereby obviating the need for expensive precious metal compositions. In the process, a fritted copper paint (16) is applied to a ceramic substrate (18) and fired at a temperature of 850.degree. C. to 950.degree. C. and is oxidized. Concurrently, the paint (16) is adhesively joined to the nonreactive and nonconductive ceramic substrate (18). Next, a resistor paint (20) is applied in overlapping relationship with the air-heated copper conductor pattern (19) and fired at 850.degree. C. to 950.degree. C. The entire unit is then fired in a reducing atmosphere at a temperature of 260.degree. C. to 450.degree. C. to reduce the oxidized copper. The air-fired resistor pattern (21) can either be protected by a coating (40) or unprotected during the reducing atmosphere firing.