Abstract: A first substrate is provided within a chemical vapor deposition chamber. A reactive gas mixture comprising TiCl4 and a silane is provided within the chamber effective to first chemically vapor deposit a titanium silicide comprising layer on the first substrate. After the first deposit, the first substrate is removed from the chamber. After the first deposit, a first cleaning is conducted within the chamber with a chlorine comprising gas. After the first cleaning, a second cleaning is conducted within the chamber with a hydrogen comprising gas. After the second cleaning and after the removing, a titanium silicide comprising layer is chemically vapor deposited over a second substrate within the chamber using a reactive gas mixture comprising TiCl4 and a silane. Other implementations are disclosed.

Abstract: Organofluorosilicate glass films contain both organic species and inorganic fluorines, exclusive of significant amounts of fluorocarbon species. Preferred films are represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic % y is from 10 to 50 atomic %, x is from 1 to 30 atomic %, z is from 0.1 to 15 atomic %, and x/z is optionally greater than 0.25, wherein substantially none of the fluorine is bonded to the carbon. A CVD method includes: (a) providing a substrate within a vacuum chamber; (b) introducing into the vacuum chamber gaseous reagents including a fluorine-providing gas, an oxygen-providing gas and at least one precursor gas selected from an organosilane and an organosiloxane; and (c) applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents and to form the film on the substrate.

Abstract: An oxide and an oxynitride films and their methods of fabrication are described. The oxide or the oxynitride film is grown on a substrate that is placed in a deposition chamber. A silicon source gas (or a silicon source gas with a nitridation source gas) and an oxidation source gas are decomposed in the deposition chamber using a thermal energy source. A silicon oxide (or an oxynitride) film is formed above the substrate wherein total pressure for the deposition chamber is maintained in the range of 50 Torr to 350 Torr and wherein a flow ratio for the silicon source gas (or the silicon source gas with the nitridiation source gas) and the oxidation source gas is in the range of 1:50 to 1:10000 during a deposition process.

Abstract: A method of forming (and apparatus for forming) tantalum suicide layers (including tantalum silicon nitride layers), which are typically useful as diffusion barrier layers, on a substrate by using a vapor deposition process with a tantalum halide precursor compound, a silicon precursor compound, and an optional nitrogen precursor compound.

Abstract: CVD aluminide coatings including a small concentration of a reactive, gettering element for surface active impurities dispersed therein are formed for improved oxidation resistance. The aluminide coatings are formed by CVD codeposition of Al and the gettering element on the substrate using coating gases for the gettering element generated either outside or inside the coating retort depending on the chlorination temperature needed for the particular gettering element.

Abstract: This invention is embodied in an improved process for growing high-quality silicon dioxide layers on silicon by subjecting it to a gaseous mixture of nitrous oxide (N2O) and ozone (O3). The presence of O3 in the oxidizing ambiance greatly enhances the oxidation rate compared to an ambiance in which N2O is the only oxidizing agent. In addition to enhancing the oxidation rate of silicon, it is hypothesized that the presence of O3 interferes with the growth of a thin silicon oxynitride layer near the interface of the silicon dioxide layer and the unreacted silicon surface which makes oxidation in the presence of N2O alone virtually self-limiting. The presence of O3 in the oxidizing ambiance does not impair oxide reliability, as is the case when silicon is oxidized with N2O in the presence of a strong, fluorine-containing oxidizing agent such as NF3 or SF6.

Abstract: A method for coating a micro-electromechanical systems device with a silane coupling agent by a) mixing the silane coupling agent with a low volatile matrix material in a coating source material container; b) placing the micro-electromechanical systems device in a vacuum deposition chamber which in connection with the coating source material container; c) pumping the vacuum deposition chamber to a predetermined pressure; and maintaining the pressure of the vacuum deposition chamber for a period of time in order to chemically vapor deposit the silane coupling agent on the surface of the micro-electromechanical systems device

Abstract: A process for depositing titanium silicide films via chemical vapor deposition takes place in a deposition chamber that has been evacuated to less than atmospheric pressure and utilizes, as reactants, the organometallic compound tertiary-butyltris-dimethylamido-titanium and a silicon-containing compound such as silane.

Abstract: CVD aluminide coatings including a small concentration of a reactive, gettering element for surface active impurities dispersed therein are formed for improved oxidation resistance. The aluminide coatings are formed by CVD codeposition of Al and the gettering element on the substrate using coating gases for the gettering element generated either outside or inside the coating retort depending on the chlorination temperature needed for the particular gettering element.

Abstract: A body is at least partially coated with one or more refractory layers of which at least one layer is of a finegrained &kgr;-Al2O3. Said &kgr;-Al2O3 layer has equiaxed grains with an average grain size of <0.5 &mgr;m. The Al2O3 layer also has at least one sublayer containing Al, Si and O. The finegrained &kgr;-Al2O3 microstructure is obtained by periodically introducing a silicon halide, preferably SiCl4, during the Al2O3-process.

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.

Abstract: A method of applying a coating to a surface of a substrate, comprising the steps of: introducing a substrate into an atmosphere which consists of at least one chemically reactive compound, water and at least one of nitrogen and argon, and thereafter using a corona discharge on the surface of the substrate to form a coating from the reactive compound having an inhibiting effect on the permeability to vapor and/or gas.

Abstract: The present invention relates to a method for forming silicon oxide films on substrates using an atomic layer deposition process. Specifically, the silicon oxide films are formed at low temperature and high deposition rate via the atomic layer deposition process using a Si2Cl6 source unlike a conventional atomic layer deposition process using a SiCl4 source. The atomic layer deposition apparatus used in the above process can be in-situ cleaned effectively at low temperature using a HF gas or a mixture gas of HF gas and gas containing —OH group.

Abstract: A system and method for real time deposition process control based on resulting product detection, where the system and method detect an amount of at least one reaction product in real time, while the deposition process is being performed, the detected amount of reaction product is compared with a reference amount, and a comparison result is fed back in real time to adjust a supply of one or more reactants. The system and method provide real time control over the deposition process and/or reduce the number of wafers produced that do not meet processing target values.

Abstract: The present invention provides a method for making a superabrasive composite material having the general formula SixCyNz, and tools containing such a material. In one aspect, vapor forms of Si, C, and N elements are deposited onto a molten metal catalyst and solid SixCyNz is precipitated therefrom.

Abstract: A method for growing a thin tungsten silicide film on a hydrated substrate in a reaction space introduces a tungsten halide precursor, where the halide is not fluorine, into the reaction space to the hydrated substrate to create, for example, a chlorine terminated substrate surface and deposit tungsten without scavenging silicon. A silicon hydride precursor is then introduced into the reaction space to the chloride terminated substrate surface to create a hydride terminated substrate surface and deposit silicon. The two preceding steps are repeated an integral number of times to form a tungsten silicide film on the substrate, wherein a reaction by-product is a hydrogen halide.

Abstract: A chemical vapor deposition (CVD) method for depositing a suicide and a CVD system for performing the same are disclosed. A silicide is deposited on a substrate. Residual gases remaining from the depositing step are purged out by flowing air including H2O (g), to substantially remove fumes caused by the residual gases. In the purge step, the cycle purge is carried out at the conditions similar to the flow of atmosphere, to substantially remove the fumes.

Abstract: A method of removing residual fluorine present in a HDP-CVD chamber which includes a high pressure seasoning process, a dry-cleaning process, and a low-pressure deposition process.

Abstract: An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

Abstract: A method for near atmospheric pressure chemical vapor deposition of a silicon based film onto a substrate includes introducing into a deposition chamber at about atmospheric pressure: (i) a substrate; (ii) an iodosilane precursor in the vapor state having at least three iodine atoms bound to silicon; and (iii) at least one reactant gas; and maintaining a deposition temperature within the chamber from about 250° C. to about 650° C. for a period of time sufficient to deposit a silicon based film on the substrate. Silicon based films formed by near atmospheric pressure chemical vapor deposition using an iodosilane precursor in a vapor state and methods for forming silicon-based films using ultraviolet assisted chemical vapor deposition are also included.

Abstract: A process is provided for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes including one or more organofluoro silanes characterized by the absence of aliphatic C—H bonds. In one embodiment, the process is carried out using a mild oxidizing agent. Also provided is a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material for use in an integrated circuit structure containing silicon atoms bonded to oxygen atoms, silicon atoms bonded to carbon atoms, and carbon atoms bonded to fluorine atoms, where the dielectric material is characterized by the absence of aliphatic C—H bonds and where the dielectric material has a ratio of carbon atoms to silicon atoms of C:Si greater than about 1:3.

Abstract: A process for coating the inside surfaces of silicon microflow devices, such as electrophoresis microchannels, with a low-stress, conformal (uniform) silicon nitride film which has the ability to uniformly coat deeply-recessed cavities with, for example, aspect ratios of up to 40:1 or higher. The silicon nitride coating allows extended exposure to caustic solutions. The coating enables a microflow device fabricated in silicon to be resistant to all classes of chemicals: acids, bases, and solvents. The process involves low-pressure (vacuum) chemical vapor deposition. The ultra-low-stress silicon nitride deposition process allows 1-2 &mgr;m thick films without cracks, and so enables extended chemical protection of a silicon microflow device against caustics for up to 1 year. Tests have demonstrated the resistance of the films to caustic solutions at both ambient and elevated temperatures to 65° C.

Abstract: A method is described for forming a low-k dielectric film, in particular, a pre-metal dielectric (PMD) on a semiconductor wafer which has good gap-filling characteristics. The method uses a thermal sub-atmospheric CVD process that includes a carbon-containing organometallic precusor such as TMCTS or OMCTS, an ozone-containing gas, and a source of dopants for gettering alkali elements and for lowering the reflow temperature of the dielectric while attaining the desired low-k and gap-filling properties of the dielectric film. Phosphorous is a preferred dopant for gettering alkali elements such as sodium. Additional dopants for lowering the reflow temperature include, but are not limited to boron, germanium, arsenic, fluorine or combinations thereof.

Abstract: The purpose of the present invention is to describe a novel approach for converting 3-dimensional, synthetic micro- and nano-templates into different materials with a retention of shape/dimensions and morphological features. The ultimate objective of this approach is to mass-produce micro- and nano-templates of tailored shapes through the use of synthetic or man-made micropreforms, and then chemical conversion of such templates by controlled chemical reactions into near net-shaped, micro- and nano-components of desired compositions. The basic idea of this invention is to obtain a synthetic microtemplate with a desired shape and with desired surface features, and then to convert the microtemplate into a different material through the use of chemical reactions.

Abstract: An atomic layer deposition (ALD) method employing Si2Cl6 and NH3, or Si2Cl6 and activated NH3 as reactants. In one embodiment, the invention includes the steps of (a) placing a substrate into a chamber, (b) injecting a first reactant containing Si2Cl6 into the chamber, (c) chemisorbing a first portion of the first reactant onto the substrate and physisorbing a second portion of the first reactant onto the substrate, d) removing the non-chemically absorbed portion of the first reactant from the chamber, (e) injecting a second reactant including NH3 into the chamber, (f) chemically reacting a first portion of the second reactant with the chemisorbed first portion of the first reactant to form a silicon-containing solid on the substrate, and (g) removing the unreacted portion of the second reactant from the chamber. In other embodiments, the first reactant can contain two or more compounds containing Si and Cl, such as Si2Cl6 and SiCl4.

Abstract: The present invention is focused on a revolutionary, low-cost (highly-scaleable) approach for the mass production of three-dimensional microcomponents: the biological reproduction of naturally-derived, biocatalytically-derived, and/or genetically-tailored three-dimensional microtemplates (e.g., frustules of diatoms, microskeletons of radiolarians, shells of mollusks) with desired dimensional features, followed by reactive conversion of such microtemplates into microcomponents with desired compositions that differ from the starting microtemplate and with dimensional features that are similar to those of the starting microtemplate. Because the shapes of such microcomponents may be tailored through genetic engineering of the shapes of the microtemplates, such microcomposites are considered to be Genetically-Engineered Materials (GEMs).

Abstract: A process for depositing titanium silicide films via chemical vapor deposition takes place in a deposition chamber that has been evacuated to less than atmospheric pressure and utilizes, as reactants, the organometallic compound tertiary-butyltris-dimethylamido-titanium and a silicon-containing compound such as silane. The deposition temperature, which is dependent on the nitrogen source, is within a range of 400 to 800° C. The low end of the temperature range utilizes a plasma-enhanced deposition process, while the higher end of the temperature range relies on thermal decomposition to initiate the reaction. The films deposited using the process have a sheet resistance of about 2 to 10 ohms per square and contain less than 5 percent carbon impurities and less than 5 percent oxygen impurities by weight.

Abstract: A method for chemical vapor deposition of a TiSixNy film onto a substrate wherein x is greater than zero and no greater than about 5, and y is greater than zero and no greater than about 7, including introducing into a deposition chamber: (i) a substrate; (ii) a source precursor comprising titanium in a vapor state having the formula (I):

Abstract: A silicon article including a silicon base and columns extending from the silicon base. The columns define a gap between the columns which is devoid of material so that the article can act as a filter or heat sink. Also disclosed is a method of making the silicon article.

Abstract: An embodiment of the present invention provides methods for forming a carbon-containing layer having a low dielectric constant and good gap-fill capabilities. A method includes depositing a carbon-containing layer on a substrate and transforming the carbon-containing layer to remove at least some of the carbon. The transforming step may include annealing the carbon-containing layer in a furnace containing a hydrogen atmosphere, for example. The carbon-containing layer may be a carbon-doped silicon oxide material, where the transforming step changes the carbon-doped silicon oxide. Additionally, the method may include subjecting the annealed layer to a hydrogen and/or low oxygen plasma treatment to further remove carbon from the layer. Additionally, a step of adding a capping layer to the annealed, plasma treated material is provided.

Abstract: A method for fabricating N-type doped polycrystalline silicon. A reactive gas source is introduced into a gas deposition reaction chamber and a chemical vapor deposition process is performed to form an N-type doped polycrystalline film.

Abstract: A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.

Abstract: Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin film may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films.

Abstract: Embodiments of the present invention include a method of depositing an improved seasoning film. In one embodiment the method includes, prior to performing a substrate processing operation, forming a layer of silicon over an interior surface of the substrate processing chamber as opposed to a layer of silicon oxide. In certain embodiments, the layer of silicon comprises at least 70% atomic silicon, is deposited from a high density silane (SinH2n+2) process gas and/or is deposited from a plasma having a density of at least 1×1011 ions/cm3.

Abstract: A method for forming a metal layer located over a metal underlayer of a semiconductor device, using a metal halogen gas. The method involves supplying a predetermined reaction gas into a reaction chamber for a predetermined period of time prior to deposition of the metal layer. The reaction gas has a higher reactivity with an active halogen element of a metal halogen gas supplied to form the metal layer, compared to a metal element of the metal halogen gas. As the metal halogen gas is supplied into the reaction chamber, the reaction gas reacts with the halogen radicals of the metal halogen gas, so that the metal underlayer is protected from being contaminated by impurities containing the halogen radicals.

Abstract: A method for the deposition of a silicon dioxide film onto a substrate using plasma enhanced chemical vapor deposition and TEOS is disclosed. The method includes controlling the deposition rate of silicon dioxide on a substrate by pulsing the radio frequency power supply used to generate a TEOS oxide plasma. The obtained silicon dioxide film is good in electrical and mechanical film properties for the application of forming thin film transistors.

Abstract: A substrate is prepared for thin film metallization by applying one or more substantially conformal films or layers of a silicon glass onto the surface of the substrate. The total thickness of the glass on the substrate is not more than approximately 12,000 to 15,000 Angstroms and preferably between about 4000 and 6000 Angstroms. The glass is preferably deposited substantially uniformly onto the substrate surface so that the topographical features of the underlying substrate are not significantly changed by the presence of the glass.

Abstract: A chemical vapor deposited, p phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The thermal conductivity of the silicon carbide is sufficiently high such that it can be employed as parts of apparatus and components of electrical devices where a high heat load is generated. Such components may include active thermoelectric coolers, heat sinks and fans.

Abstract: Several modifications have been made to the LPCVD equipment of the prior art in order to reduce the amount of particulate contamination. A bypass vent has been added in parallel with the main vacuum exhaust gate valve. Said bypass vent is left open during loading and unloading of the system with wafers that are to be processed, thereby ensuring a steady flow of air away from them at all times. Additionally, the section of the vacuum line immediately adjacent to the reaction chamber is heated. An example of the application of said modified equipment to LPCVD is provided as well as test results that illustrate the efficacy of the new equipment and method.

Abstract: An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

Abstract: Methods for manufacturing an electrostatic actuator that comprises electrode members having opposing surfaces with a gap disposed therebetween. In an ink jet head, a bottom surface of a diaphragm may be one of the electrodes (common electrode) of an eletrostatic actuator, the diaphragm forming a wall of an ink chamber in the ink jet head that is displaced relatively by an electrostatic force. A hydrophobic film, preferably hexamethyldisilazane (HMDS), is formed on at least one of the opposing electrode surfaces to improve the durability of the electrostatic actuator so that electrostatic attraction between opposing electrode members does not decrease and the opposing electrode members do not stick together. HMDS molecules are smaller than PFDA molecules, and a uniform, variation-free hydrophobic film can therefore be formed even when the gap between opposing electrodes is narrow. Durability and film stability of a HMDS hydrophobic film are also high.

Abstract: An atomic layer deposition method of forming a solid thin film layer containing silicon. A substrate is loaded into a chamber. A first portion of a first reactant is chemisorbed onto the substrate, and a second portion of the first reactant is physisorbed onto the substrate. The physisorbed portion is purged from the substrate and the chamber. A second reactant is injected into the chamber. A first portion is chemically reacted with the chemisorbed first reactant to form a silicon-containing solid on the substrate. The first reactant is preferably Si[N(CH3)2]4, SiH[N(CH3)2]3, SiH2[N(CH3)2]2 or SiH3[N(CH3)2]. The second reactant is preferably activated NH3.

Abstract: The described device is introduced into a plastic container with a narrow opening and serves a plasma enhanced process for treating the inside surface of the container. The device (2) extends between the container opening and the container bottom along the container axis (X) and comprising a gas feed tube (23) for feeding a process gas into the container and permanent magnets (24) for establishing a stationary magnetic field inside the container. The magnets (24) form a column of superimposed magnets which is arranged inside the gas feed tube (23). The north and south poles of each magnet are positioned on opposite sides of the container axis (X). The device may also comprise cooling means (25) for cooling the gas feed tube and the magnets.

Abstract: A method of depositing a dielectric film on a substrate, comprising depositing a silicon oxide layer on the substrate; and treating the dielectric layer with oxygen. A layer of FSG having a fluorine content of greater than 7%, as measured by peak height ratio, deposited by HDP CVD, is treated with an oxygen plasma. The oxygen treatment stabilizes the film. In an alternative embodiment of the invention a thin (<1000 Å thick) layer of material such as silicon nitride is deposited on a layer of FSG using a low-pressure strike. The low pressure strike can be achieved by establishing flows of the process gases such that the pressure in the chamber is between 5 and 100 millitorr, turning on a bias voltage for a period of time sufficient to establish a weak plasma, which may be capacitively coupled. After the weak plasma is established a source voltage is turned on and subsequently the bias voltage is turned off.

Abstract: A method and apparatus, and product by process, for the production of bulk polysilicon by a chemical vapor deposition process on a removable tube section. A quartz envelope and base plate form a CVD reactor enclosure, with external radiant heaters providing process heat through the wall of the reactor, and with process gas inlet and outlet ports located in the base plate. A tube section, preferably an EFG silicon tube-section, vertically emplaced on the base plate and capped to close the top is used as the reaction chamber. During the CVD process, deposition occurs on the inside surface of the chamber tube, the inner diameter of the deposit layer becoming increasingly smaller as the yield accumulates. In a two tube reactor, a smaller diameter, vertical middle tube is uniformly spaced and supported inside the chamber tube for fall flow of process gas over and under the middle tube so that deposition occurs on the three exposed tube surfaces.

Abstract: The present invention provides a chemical vapor deposition using, as feed gases, a silicon compound and hydrazine or a derivative thereof, or a compound containing both silicon and nitrogen, and a process and a system useful for chemical vapor deposition growth, in which a chlorinated silane compound and ammonia, feed gases, are preliminarily reacted with each other, and the resulting reaction gas mixture from which the ammonium halide produced by the preliminary reaction has been eliminated is fed to form a thin film on a substrate.

Abstract: A method and apparatus for selectively depositing hemispherical grained silicon on the surface of a wafer in a process chamber. The chamber is evacuated so that a partial pressure of water vapor in the chamber is less than 10−7 torr, preferably using a turbomolecular pump and a water vapor pump in cooperation. A process gas mixture including silicon is introduced into the chamber. The surface of the wafer is seeded with silicon nuclei, and the wafer is annealed to convert the silicon to HSG.

Abstract: In a high frequency plasma CVD using a source gas comprising a silicon halide and hydrogen, the value of Q defined by Q=Po×PR/S/d is controlled so as to be 50 or more, wherein Po (W) is a supplied power, S (cm2) is the area of a high frequency introducing electrode, d (cm) is a distance between the high frequency introducing electrode and a substrate, and PR (mTorr) is a pressure. Thereby, a method of forming a silicon thin film, a silicon thin film and a photovoltaic element excellent in photoelectric characteristics are provided which attain a film forming rate of an industrially practical level.

Abstract: Methods of protecting from atmospheric contaminants, or removing atmospheric contaminants from, the bonding surfaces of copper semiconductor bond pads by coating a bond pad with a layer of a ceramic material having a thickness that is suitable for soldering without fluxing and that is sufficiently frangible during ball or wedge wire bonding to obtain metal-to-metal contact between the bonding surfaces and the wires bonded thereto. Coated semiconductor wafers are also disclosed.

Abstract: Silicon dioxide (SiO2) films are deposited at room temperature using a chemical vapor deposition (CVD) reaction catalyzed by ammonia or a Lewis base. The SiO2 film growth is accomplished through the reaction of water and certain silicon precursors. Examples of these reactions include the SiCl4+2H2O→SiO2+4HCl or Si(OR)4+2H2O→SiO2+4ROH reactions and catalyzed with ammonia (NH3) or other Lewis bases. The NH3 catalyst lowered the required temperature for SiO2 CVD from >900 K to 313-333 K and reduced the SiCl4 and H2O pressures required for efficient SiO2 CVD from several Torr to <500 mTorr.