Abstract: A method for depositing highly conformal silicate glass layers via chemical vapor deposition through the reaction of TEOS and O3 comprises placing an in-process semiconductor wafer having multiple surface constituents in a plasma-enhanced chemical vapor deposition chamber. A “clean” silicate glass base layer substantially free of carbon particle impurities on an upper surface is formed in one of two ways. The first employs plasma-enhanced chemical vapor deposition using TEOS and diatomic oxygen gases as precursors to first deposit a “dirty” silicate glass base layer having carbon particle impurities imbedded on an upper surface thereof being transformed to a clean base layer by subjecting it to a plasma treatment, using a mixture of a diamagnetic oxygen-containing oxidant, such as ozone or hydrogen peroxide, and diatomic oxygen gas into the chamber and striking an RF plasma.

Abstract: An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

Abstract: A method for chemical vapor deposition of a TiSixNy film onto a substrate wherein x is greater than zero and no greater than about 5, and y is greater than zero and no greater than about 7, including introducing into a deposition chamber: (i) a substrate; (ii) a source precursor comprising titanium in a vapor state having the formula (I):

Abstract: The present invention provides a chemical vapor deposition using, as feed gases, a silicon compound and hydrazine or a derivative thereof, or a compound containing both silicon and nitrogen, and a process and a system useful for chemical vapor deposition growth, in which a chlorinated silane compound and ammonia, feed gases, are preliminarily reacted with each other, and the resulting reaction gas mixture from which the ammonium halide produced by the preliminary reaction has been eliminated is fed to form a thin film on a substrate.

Abstract: A process for reducing intrinsic stress and/or hydrogen content of a SiOx film grown by chemical vapor deposition. The process is applicable to plasma-enhanced and electron cyclotron resonance chemical vapor deposition of silicon dioxide wherein a vapor phase etchant is introduced while growing the silicon dioxide film. The presence of the etchant during the plasma deposition process allows for selective removal of high energy silicon dioxide molecules in the growing film thus reducing intrinsic stress within the film. The use of halogen etchants further reduces the amount of hydrogen present as hydroxyl within the film.

Abstract: Dry processes for coating titania particles, as well as the coated titania particles produced thereby, are provided. In the subject processes, a moving bed of titania particles is contacted with a gaseous first reactant under conditions sufficient for the first reactant to adsorb on the surface of the particles. Next, the particles having the first reactant adsorbed to their surface are contacted with a gaseous second reactant under conditions such that the second reactant reacts with the surface adsorbed first reactant to produce a product on the surface and in turn yield titania particles coated with a compact layer of the resultant product. The resultant coated titania particles find use in a variety of applications, including as pigments in paints and cosmetics.

Abstract: A CVD outwardly grown platinum aluminide diffusion coating on a nickel or cobalt base superalloy substrate wherein the platinum modified aluminide diffusion coating is modified to include silicon, hafnium, and optionally zirconium and/or other active elements (e.g. Ce, La, Y, etc.) each in a concentration of about 0.01 weight % to about 8 weight % of the outer additive (Ni,Pt)(Al,Si) layer of the coating. A particular coating includes about 0.01 weight % to less than 2 weight % of each of silicon, hafnium, and zirconium in the outer additive layer, preferably with a Hf/Si ratio less than about 1 and, when Zr also is present, a Hf+Zr/Si ratio of less than about 1. A coating microstructure is provided characterized by an inner diffusion zone or region adjacent the substrate and the outer additive (Ni,Pt)(Al,Si) layer including hafnium silicide second phase particles or regions dispersed throughout the outer additive layer of the coating.

Abstract: A method for high rate silicon deposition at low pressures, including a method of operating a CVD reactor having a high degree of temperature and gas flow uniformity, the method of operation providing a novel combination of wafer temperature, gas flow and chamber pressure. According to the method, a substrate is placed in a vacuum chamber wherein a reactant gas is provided at a high velocity in parallel with the substrate via a plurality of temperature controlled gas injectors providing a condition wherein the deposition rate is only limited by the rate of delivery of unreacted gas to the substrate surface and the rate of removal of reaction byproducts. The novel combination of process conditions moves the reaction at the wafer surface into the regime where the deposition rate exceeds the crystallization rate, resulting in very small crystal growth and therefore a very smooth polysilicon film with a surface roughness on the order of 5-7 nm for films 2500 angstroms thick.

Abstract: A method and apparatus, and product by process, for the production of bulk polysilicon by broad area chemical vapor deposition, consisting of a quartz envelope and base plate forming a reactor enclosure, with external radiant heaters providing the heat source. A thin wall, edge-defined film fed growth (EFG) silicon tube section is used as the deposition casing and reaction chamber wall. The tube is capped at the top and sealed to the base plate to form the reaction chamber. External heaters radiate heat through the quartz enclosure to heat the tube wall to deposition temperature. A through flow of process gas is introduced to initiate the deposition. A uniform wide surface area deposit occurs on the inside surface of the tube, causing the diameter to become increasingly smaller as the yield accumulates.

Abstract: A method of forming a film on a substrate using transition metal or lanthanide complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

Abstract: A silicon article including a silicon base and columns extending from the silicon base. The columns define a gap between the columns which is devoid of material so that the article can act as a filter or heat sink. Also disclosed is a method of making the silicon article.

Abstract: A process for coating substrates with a silicon-containing protective layer by chemical vapor deposition with a silicon-containing compound of the structural formula (1): in which R1 is an alkyl group having 1 to 4 carbon atoms, and R2 is hydrogen or an alkyl group having 1 to 4 carbon atoms.

Abstract: Process for the production of a final gaseous mixture comprising a carrier gas, an oxidizing gas and a silane, with a predetermined content of each of the three gaseous components, comprising the steps of: a) preparing a primary gaseous mixture comprising a neutral gas and the silane, wherein the silane is present in the primary gaseous mixture at a content below a self-ignition limit of that particular silane in air; b) providing a first gas stream, comprising the carrier gas and a controlled residual content of the oxidizing gas; c) preparing the final mixture according to one or other of the following two procedures, as a function of the residual content of oxidizing gas in the gas stream comprising the carrier gas: P1: mixing the first gas stream with a second stream of the primary gaseous mixture and with a third stream of the oxidizing gas in proportions which make it possible to obtain the final mixture, the addition of the oxidizing gas stream being carried out under dynamic conditions; P2: mixin

Abstract: The invention relates a process for fabricating crystalline metal oxide materials comprising tin oxide, zirconia, or titania in form as powder, monolith gel or film by first forming a metal oxide material containing —OH surface group through a sol-gel process, and then treating them with [SiRm]nXzHy compound which reacts with the —OH group to form —OSiRm surface group, and heating the thus-treated oxide material at a high temperature to crystallize them into a crystalline metal oxide material with high crystallinity, small crystal size (<100 Å) and high surface area (>100 m2/g).

Abstract: A process for depositing titanium suicide films via chemical vapor deposition takes place in a deposition chamber that has been evacuated to less than atmospheric pressure and utilizes, as reactants, the organometallic compound tertiary-butyltris-dimethylamido-titanium and a silicon-containing compound such as silane. The deposition temperature, which is dependent on the nitrogen source, is within a range of 400 to 800° C. The low end of the temperature range utilizes a plasma-enhanced deposition process, while the higher end of the temperature range relies on thermal decomposition to initiate the reaction. The films deposited using the process have a sheet resistance of about 2 to 10 ohms per square and contain less than 5 percent carbon impurities and less than 5 percent oxygen impurities by weight.