Abstract: The present invention describes a process for protecting aluminum nitride circuit substrates during electroless plating using a sol-gel technique. The aluminum nitride substrate is coated with a metal. The coated substrate is etched to form a circuit pattern thereby exposing the aluminum nitride. The etched substrate is placed in a solution of tetraethylorthosilicate and withdrawn. The substrate is dried in air and then baked in an oven to remove all of the organic solvents leaving a stoichio metric film of silica on the exposed substrate. The substrate is then placed in an electroless plating solution and the circuit pattern is plated to a predetermined thickness.

Abstract: A joint and a laminate including a nickel-titanium alloy such as Nitinol and a method for preparing the surface of a nickel-titanium alloy member for bonding solder material and, electively, another similar or dissimilar member thereto. The method includes applying a halogen containing flux to the titanium oxide coated surface of a nickel-titanium alloy member and heating the flux to its activation temperature. The flux removes and suspends the titanium oxide therein and deposits a metal from the halogen containing flux on the oxidation free surface. The activated flux also coats the member surface for protection from further oxidation. A bonding material such as a tin-silver solder is flowed onto the tinned surface to displace the activated flux. Electively, another member is applied to the molten solder to form a joint between the two members. The residual flux is cleaned from the joint to prevent further deterioration of the base metal.

Abstract: A surface treatment for a R-TM-X type of permanent magnet comprising the steps: Etching the magnet with nitric acid having a concentration of 0.2 to 10 vol %, then etching the magnet with a mixture of oxygenated water having a hydrogen peroxide concentration of 0.2 to 10 vol % and acetic acid having a concentration of 10-30 vol %, and next plating the magnet with a copper plating initially followed by a nickel plating. R represents an element or a mixture of rare earth elements, TM is mainly composed of iron and transition elements other than iron and X represents one or more of a mixture of elements to enhance the coercivity of the magnet. This improvement of the magnet material itself improves the corrosion resistance of the protective film on the magnet surface.

Abstract: A procedure for the application of a polytetrafluoroethylene film on aluminum surfaces by means of mechanical-chemical bonding using a specific compound which, on one hand can adhere to a smooth aluminum surface and, on the other hand, being suitable for producing mechanical-chemical bonding with the P.T.F.E. The aluminum surface is cleaned with an aqueous alkaline solution and the compound applied by a rolling process using four rolling machines.

Abstract: A method of applying to surfaces of component parts of an evaporator hydrophilic coatings which do not emit offensive odors under operating conditions, or at other times. The method provides coatings in which water glass and colloidal silica are attached to the surfaces in the form of solids in an amount of 0.010 to 0.066 g/m.sup.2.

Abstract: A high temperature resist process is combined with microlithographic patterning for the production of materials, such as diamond films, that require a high temperature deposition environment. For diamond films, a high temperature silicon nitride resist can be used for microlithographic patterning of a silicon substrate to provide a uniform distribution of diamond nucleation sites and to improve diamond film adhesion to the substrate. A fine-grained nucleation geometry, established at the nucleation sites, is maintained as the diamond film is deposited over the entire substrate after the silicon nitride resist is removed. The process can be extended to form surface relief features, such as "moth eye" surfaces, and microstructures of fine-grained polycrystalline diamond, such as rotatable microgears and surface relief patterns, that have the desirable characteristics of hardness, wear resistance, thermal conductivity, chemical inertness, anti-reflectance, and a low coefficient of friction.

Abstract: A high gloss color finish for a plastic article is formed by coating and curing a colored primer layer (12) onto a plastic substrate (10). A light transmissive basecoat (14) is applied and cured onto the primer layer (12) to form a substrate (10) with a colored surface. Indium islands (20) are vacuum deposited onto the basecoat (12) to a thickness up to 100 Angstroms to form a visually macroscopically continuous layer (21). The island layer (21) is etched to remove smaller sized islands. A transparent topcoat (24) is applied onto the basecoat and indium islands and cured in place.

Abstract: A method of treating a nonferrous metal substrate such as aluminum with an acid activating agent such as HF followed by treating with an organophosphate or organophosphonate. The treatment provides for improved adhesion and flexibility as well as resistance to humidity, salt spray corrosion and detergents of subsequently applied coatings.

Abstract: A process for protecting aluminum nitride circuit substrates during electroless plating using surface oxidation. The aluminum nitride substrate is coated with a metal stack. The coating on the substrate is etched to form a circuit pattern. The patterned substrate is then fired in an oxidizing atmosphere at a temperature and time sufficient to convert the exposed aluminum nitride to aluminum oxide. After this conversion, the substrate is plated in an electroless solution forming a microwave circuit ready for component attachment and packaging.

Abstract: A thin film deposition apparatus has at least two vacuum chambers, one of which is an etching vacuum chamber for cleaning wafer surfaces. The etching vacuum chamber includes a first gas introduction system for introducing an etching gas, and a second gas introduction system for introducing a reactive gas for use in the cleaning whereby silicon deposited films will be removed. A thin film deposition method which may be carried out by the apparatus includes a cleaning process performed in advance of thin film deposition process for depositing a thin film on the wafer surfaces. In the cleaning process, the wafer surfaces are etched with the etching gas, the wafers are thereafter taken out of the chamber, a simulation wafer for particle checking is transferred into the chamber, and the degree to which particles have been generated is checked with the simulation wafer. When required, the reactive gas is introduced thereafter to gasify the deposited films and the particles.

Abstract: A process for fabricating a porous, high surface area electrode and the use of that electrode in an electrolytic cell for manufacturing chlorine-free chlorine dioxide from dilute alkali metal chlorite solutions in a single step is disclosed. The electrolytic cell uses a porous flow-through anode and a cathode separated by a suitable separator.

Abstract: A process is disclosed for the production of an optical thin film waveguide of TiO.sub.2 with an attenuation of <5 dB/cm on a planar inorganic substrate wherein the thin film waveguide is produced by a microwave plasma CVD process (PCVD).

Abstract: A process for removing unwanted contaminant metallic oxide from the surface of a nickel branding layer of an electronic circuit package, in order to enhance the affinity of a layer of phenolic branding ink to the surface of the metallic branding layer involves treating the surface of the metallic branding layer with a hydrogen-containing, chemical reducing gas phase ambient, so that oxygen within the surface oxide chemically combines with the hydrogen component within the ambient, so as to form readily removable water. The surface of the metallic branding layer is thereby substantially free of surface oxide, providing a greater surface area of metallic-ink bonding sites. As a consequently, a subsequently deposited layer of branding ink strongly adheres to the surface of the nickel and is not readily removed during further cleaning of the circuit package.

Abstract: In the etching and deoxidizing of aluminum, suppression of aluminum oxyfluoride crystal formation by the incorporation of phosphoric acid into an etchant/deoxidizer solution containing water, ferric sulfate, nitric acid, and HF or fluoride salts.

Abstract: A method is provided for joining Be-Al alloy structural members to yield a high shear strength at the interface. Surface oxides are first removed from the Be-Al alloy members. Aluminum is then selectively etched from the bonding surfaces to allow the flow of braze alloy into high aspect ratio capillary sites. A discontinuous ceramic reinforcing material, such as Al.sub.2 O.sub.3 or SiC in particulate or whisker form, is added in small quantities to a braze foil, such as Al-Si, to create a composite at the bond interface. The braze foil and reinforcing material are sandwiched between the Be-Al alloy members, and the joint is heated to above the liquidus temperature of the braze alloy but below the melting point of aluminum. The resulting interface shear strength of the Be-Al alloy bond has been tested to an average of about 60% of the parent alloy shear strength.

Abstract: A conductive oxide film is formed on a substrate at a low temperature. The formed conductive oxide film is not very dense because of the low temperature. Therefore the formed conductive oxide film can easily be etched by an etchant having a weak etching capability. And by the etching a pattern of the formed conductive oxide film is produced. The patterned conductive oxide film is oxidized at a temperature in the range of 100.degree.-400.degree. C. In this way a conductive oxide pattern is produced in a shorter time in the method of the present invention than in a conventional method and the conductive oxide pattern produced by the method of the present invention has the almost same resistivity as the conductive oxide pattern produced by the conventional method and has an improved pattern edge and an improved reproducibility.

Abstract: An attachment surface for increasing adhesion between two objects or materials and a method for creating such a surface is disclosed. A substrate, including articles such as particularly an implantable device and high performance aircraft parts, is provided with a random irregular pattern formed through a repetitive masking and chemical milling process. Surface material is removed from the substrate without stress on the adjoining material and the process provides fully dimensional fillet radii at the base of the surface irregularities. This irregular surface is adapted to receive the adjacent material to be joined thereto, such as the ingrowth of bone material, and to provide a strong anchor for that material. The unitary nature of the substrate and surface features provides a strong anchoring surface with is resistant to cracking or breaking.

Abstract: Disclosed is a process for the preparation of an electroconductive polymeric material, comprising the steps of forming fine grooves in a substrate, embedding a polymerization reaction catalyst in the fine grooves, and bringing a monomer capable of forming an electroconductive polymeric material into contact with the catalyst embedded in the fine grooves to selectively form fine wiring of the electroconductive polymeric material in the grooves. According to this process, a polymeric material oriented in the longitudinal direction of the fine grooves can be prepared, and therefore, a polymeric material having an excellent electroconductivity can be provided.

Abstract: A method of forming a superconductor pattern in which at lest a pair of electrodes is formed on a substrate in spaced, facing relationship nd an oxide superconductor thin film having a unit lattice which assumes a laminar structure then is formed on the substrate, extending between and contacting the electrodes. The superconductor pattern obtained by this method suffers less degradation of the superconductor thin film, in comparison with that of patterns formed by the prior art methods, and the decrease of the critical current density as a function of increasing temperature is extremely small.

Abstract: The invention is a method for growing homoepitaxial films of SiC on low-tilt-angle vicinal (0001) SiC wafers. The invention proposes and teaches a new theoretical model for the homoepitaxial growth of SiC films on (0001) SiC substrates. The inventive method consists of (1) preparing the growth surface of SiC wafers slightly off-axis (from less than 0.1.degree. to 6.degree.) from the (0001) plane, (2) subjecting the growth surface to a suitable etch, and then (3) growing the homoepitaxial film using conventional SiC growth techniques.

Abstract: An apparatus for washing and cleaning metallic wheels comprising an apparatus that washes a metallic wheel, and an apparatus that subsequently cleans the washed metallic wheel. A house is provided wherein the cleaned and washed metallic wheel may be painted. A pair of rotating transport cylinders is provided in order to transport the metallic wheel from the apparatus for washing the metallic wheel to the apparatus for cleaning the metallic wheel, and subsequently from the apparatus for cleaning the metallic wheel to the house where the metallic wheel may be painted. A method for washing and cleaning a metallic wheel which includes elevating the metallic wheel from a supporting surface to a level generally horizontal to a pair of cylinders rotatably supported by a conveying frame, and rolling the metallic wheel across the pair of cylinders and into a washing chamber.

Abstract: The object of the invention is to minutely roughen a surface of a substrate, e.g. a glass plate, by an etching method for the purpose of enhancing adhesion of a coating film to the substrate surface or preventing sticking of a certain article to the substrate surface. An easily vaporizable material such as a fat or wax as a masking material is used as a masking material, and the substrate surface is scattered with numerous microscopic droplets of the masking material by exposing the substrate surface to vapor of the masking material and simultaneously to vapor of another material, e.g. water or an alcohol, which is immiscible with the masking material and serves the purpose of preventing agglomeration of droplets of the masking material on the substrate surface. After that the substrate is etched with a suitable etching fluid, and then the masking material is removed. As the result the etched surface of the substrate is scattered with numerous microscopic, islet-like land regions.

Abstract: A high temperature resist process is combined with microlithographic patterning for the production of materials, such as diamond films, that require a high temperature deposition environment. A conventional polymeric resist process may be used to deposit a pattern of high temperature resist material. With the high temperature resist in place and the polymeric resist removed, a high temperature deposition process may proceed without degradation of the resist pattern. After a desired film of material has been deposited, the high temperature resist is removed to leave the film in the pattern defined by the resist. For diamond films, a high temperature silicon nitride resist can be used for microlithographic patterning of a silicon substrate to provide a uniform distribution of diamond nucleation sites and to improve diamond film adhesion to the substrate.

Abstract: A joint and a laminate including a nickel-titanium alloy such as nitinol and a method for preparing the surface of a nickel-titanium alloy member for bonding solder material and, electively, another similar or dissimilar member thereto. The method includes applying an aluminum paste flux to the titanium oxide coated surface of a nickel-titanium alloy member and heating the flux to its activation temperature. The flux removes and suspends the titanium oxide therein along with leaching titanium from the base alloy member surface to form a nickel-rich interface surface. The activated flux also coats the nickel-rich interface layer for protection from further oxidation. A bonding material such as a tin-silver solder is flowed onto the nickel-rich interface surface to displace the activated flux. Electively, another member is applied to the molten solder to form a joint between the two members. The residual flux is cleaned from the joint to prevent further deterioration of the base metal.

Abstract: A cemented tungsten carbide substrate is prepared for coating with a layer of diamond film by subjecting the substrate surface to be coated to a process which first removes a small amount of the tungsten carbide at the surface of the substrate while leaving the cobalt binder substantially intact. Murakami's reagent is presently preferred. The substrate is then subjected to a process which removes any residue remaining on the surface as a result of the performance of the process which removes the tungsten carbide. A solution of sulfuric acid and hydrogen peroxide is presently preferred. A diamond coated cemented tungsten carbide tool is formed using an unpolished substrate, which may be prepared by etching as described above or by etching in nitric acid prior to diamond film deposition. Deposition of a substantially continuous diamond film may be accomplished by reactive vapor deposition, thermally assisted (hot filament) CVD, plasma-enhanced CVD, or other techniques.

Abstract: Metallic articles, and method for making same, having a thin, adherent, chemically formed coating on their surface which preserves the uncoated article appearance and provides a unique combination of functional properties including resistance to chipping and flaking during elevated temperature use, resistance to corrosion from chemicals in the form of gases or aqueous acidic or alkaline solutions including salt spray, organic solvents, oils and vehicle fuels and suitability as a base for paint for parts within the engine compartment of vehicles.

Abstract: A process for producing a honeycomb structure-extruding die by etching a surface of a base material for a honeycomb structure-extruding die with a gas, and coating the etched base material by CVD before an oxidized film is formed after the etching.

Abstract: A method for generating repeatable and reproducible crystallographic grain-boundary junctions is provided by forming a film on a crystalline substrate which has intersecting faces. In a preferred embodiment, a single crystal substrate is etched by an anisotropic etchant to provide a "V"-groove in one face, and an epitaxial superconducting film is grown on the faces of the V-groove. In another preferred embodiment, a step is etched with an anisotropic etch, and an epitaxial superconducting film grown on the step. Grain-boundary junctions are formed at the points of intersection of the faces with each other, or with the faces and the surface of the substrate. The film may be patterned and etched in the area of the boundary junction to form useful devices.

Abstract: The invention provides a process for etching a metal surface by applying, to the metal surface, a solution of ferric chloride at an effective concentration, which solution also contains phosphoric acid. The etching is done in an etching tank and the effective concentration of ferric ions is maintained by diffusing an oxidizing agent which is chlorine gas or a compound which forms HOCl in solution through the tank. A number of other steps which may vary according to the type and grade of metal surface which is to be etched are also performed in terms of the process of the invention, both before and after the application of the etching solution to the metal surface. Metal surfaces etched according to the invention have a coating, for example polytetrafluoroethylene, subsequently applied thereto.

Abstract: A roughened surface of a conductive substrate, such as copper, provides uniform Sn-Pb solder coatings and improved solder retention at printed wiring board (PWB) plated through-hole rims (knees) and surface pads during solder dipping or reflow. A high density of copper surface features of moderate average roughness provides the most favorable solder coating thickness distribution. Various chemical or electrochemical etching processes may be used to produce the desired copper surface topography. Reflowed solder thickness distribution in a PWB knee region attained with a ferric chloride copper etching process peaks at 4 .mu.m, which provides a good margin of safety for preventing exposure/oxidation of the underlying Cu-Sn intermetallics. The ferric chloride copper etching process yields only 1% of solder thickness measurements in the undesirable 0-1.5 .mu.m range for plated through-hole rims. Copper surface roughening is expected to greatly reduce solderability loss in mass produced PWBs.

Abstract: In the silicon substrate having porous oxidized silicon layers of this invention, which consists of a silicon substrate the one surface of which is dotted with porous oxidized silicon dots, the residual internal stress (compression stress) is dispersedly distributed in the porous oxidized silicon dots. Therefore, the entire silicon substrate having porous oxidized silicon dots of this invention is only minimally warped.Adopting a method for producing the silicon substrate of this invention which consists of covering with a mask the surface of a silicon substrate except its dotting areas to be treated, subjecting the silicon substrate to anodic formation in an aqueous hydrofluoric acid solution to form porous silicon layers in the areas to be treated and not covered with the mask and then oxidizing the formed porous silicon layers enables secured production of a silicon substrate provided with a plurality of polygonal shaped dots of porous oxidized silicon.

Abstract: When an oxide superconducting thin film is formed on a substrate by a vapor phase method such as laser ablation, for example, a plurality of grooves are formed on the substrate by photolithography or beam application in the same direction with an average groove-to-groove pitch of not more than 10 .mu.m, so that the oxide superconducting thin film is formed on a surface provided with such a plurality of grooves. Thus promoted is growth of crystals of the oxide superconducting thin film in parallel with the grooves, whereby respective directions of a-axes and c-axes are regulated to some extent. This improves critical current density of the oxide superconducting thin film.

Abstract: A selected chemical vapor deposition method includes the steps of arranging a substrate having a silicon surface and an insulator surface in a reaction chamber, supplying a gas consisting of a silicon hydride in said reaction chamber to reduce and remove a native oxide film on said silicon surface by said gas, and supplying a source gas in said reaction chamber to selectively form a film on only said silicon surface.

Abstract: A method for producing coatings on a heated substrate, preferably glass, comprises pretreating the substrate with a gaseous composition of water, air and a fluorine compound, and thereafter depositing a fluorine-doped tin-oxide coating on the substrate.

Abstract: There are disclosed a diamond-coated sintered body, comprising a film or diamond and/or diamond-like carbon deposited on the surface of a sintered body of a hard phase composed mainly of a mixture of W.sub.2 C and WC and inevitable impurities and a process for preparing the same.

Abstract: A method of selective metallization of high temperature semiconductors to produce ohmic or rectifying contacts includes modification of the surface of a high temperature semiconductor material and thereafter depositng metal thereon by chemical vapor deposition. The method includes a lithographic step to define the area on the semiconductor surface where the CVD material is to be deposited. Thereafter, a beam of refractory metal ions is directed onto the defined area to damage the semiconductor material surface so that it will react with CVD gases. The contact metal is then deposited on the damaged surface by chemical vapor deposition, so that the metal seeds on the damaged exposed surface of the semiconductor to permit direct formation of metallization on that surface.

Abstract: A shielded substrate is disclosed which has a randomly oriented, non-linear conductive pattern formed on at least one surface of the substrate. The conductive pattern provides excellent EMI/RFI shielding and visual opacity properties without generating moire' patterns. The conductive pattern is formed of a series of interconnecting non-linear, conductive elements, such as circles, ovals, ellipses and polygonal shapes. The conductive substrate may be formed through the use of photolithography process.

Abstract: A method of forming a polycrystalline film, such as a diamond, on a foreign substrate involves preparing the substrate before film deposition to define discrete nucleation sites. The substrate is prepared for film deposition by forming a pattern of irregularities in the surface thereof. The irregularities, typically craters, are arranged in a predetermined pattern which corresponds to that desired for the location of film crystals. The craters preferrably are of uniform, predetermined dimensions (in the sub-micron and micron size range) and are uniformly spaced apart by a predetermined distance. The craters may be formed by a number of techniques, including focused ion beam milling, laser vaporization, and chemical or plasma etching using a patterned photoresist. Once the substrate has been prepared the film may be deposited by a number of known techniques. Films prepared by this method are characterized by a regular surface pattern of crystals which may be arranged in virtually any desired pattern.

Abstract: The process comprises the steps of forming a fibrous reinforcement with silicium carbide fibers, forming on the fibers an intermediate coating designed to constitute an interface between the fibers and a matrix, and forming a matrix in ceramic material within the residual porosity of the fibrous reinforcement. In a step prior to the formation of the intermediate coating, a treatment is carried out by the chemical route for the elimination of the silica present on the surface of the silicium carbide fibers.

Abstract: A process is disclosed for covering a substrate with a cementitious simulated ceramic surface having a mottled, speckled appearance. Cement and sand are mixed with an aqueous solution of an adhesive resin to create a viscous liquid mortar. The viscous liquid mortar is applied onto randomly spaced portions of the cementitious substrate to create a noncontiguous thickened cementitious coating having a high viscosity to prevent spreading of the liquid mortar over the cementitious substrate. The noncontiguous thickened cementitious coating is troweled to form a plurality of interconnecting and non-interconnecting flattened and level plateaus partially covering the cementitious substrate to reveal a simulated mottled, speckled ceramic covering.

Abstract: An apparatus for forming a film on the silicon surface of an intermediate semiconductor device, wherein a silicon oxide film on the intermediate semiconductor device is etched out with an active species without damage to the silicon surface, the difference between the etching speeds of the silicon and the silicon oxide film being 5 or less. Immediately after the etching, another film is formed on the surface of the silicon without the surface being exposed to the atmosphere. Thus, the etching of the silicon oxide film and the forming of another film can be performed in the same chamber or different chambers.

Abstract: A Josephson junction consisting of high temperature ceramic superconductors layers, separated by an ultra-thin insulating barrier made of an non-oxide substance like diamond-like carbon. An integral part of this disclosure is the technique involving the use of an activated oxygen species for providing an oxygen chemical potential which is higher than that obtainable at barometric pressure.

Abstract: The invention relates to a process for stripping, from the surface of a support, a layer of paint which has been formed and hardened thereon, characterized by the requirement of a phase of pre-treating said support before the formation on the latter of the layer of paint to be stripped, said treatment consisting in applying on the support a covering product, selected among the following products: a pre-treatment vinyl resin paint, a polyurethane resin paint. It is also an object of the invention to provide products and compositions to be used in said process.

Abstract: A metallized ceramic substrate having an enhanced bond strength between the ceramic substrate and a conductive metal layer bonded thereto is disclosed. The metallized ceramic substrate includes a heterogeneous juncture band between a ceramic workpiece and a layer of electrically conductive material. The metallized ceramic substrate is made by a process which includes an acid etchant step that increases the actual surface area of the treated surface of the ceramic workpiece without undermining the integrity of the ceramic surface while at the same time selectively attacking vitreous binder phase present between substrate grains and creating even deeper penetration at the relatively higher energy triple joint junctures. In this manner, metal anchor sites that enhance adhesion are provided. During subsequent high temperature firing these anchors hold the resulting composite together as a chemical bond is formed in addition to a mechanical bond or interlock.

Abstract: Process and apparatus for forming a plastic coating on a metal strip. A metal strip is cleaned, surface treated, coated with an electrostatically charged plastic powder in an enclosed chamber using a plurality of spray guns positioned on both sides of the strip, inductively heated to above the melting point of the powder, and maintained in an infrared heater until the fused powder is flowed into a coating having a smooth surface and a uniform thickness. Thermoplastic and thermosetting coatings, having thicknesses of at least 10 microns formed using total induction and infrared heating times of less than 60 seconds, can be fabricated without cracking.

Abstract: The invention relates to a low temperature, dual beam vacuum deposition process for forming a hard, stress reduced, ballistically alloyed film such as diamond onto a substrate.

Abstract: Copper-containing multilayer substrates are etched, and stringers formed in the plated through-holes in these substrates are simultaneously removed by treatment with an aqueous composition including about 37% by weight hydrofluoric acid and about 16% by weight nitric acid. The same aqueous composition can be used to remove stringers formed during treatment of such substrates with other etchants.

Abstract: The coating of a substrate with a coating different from and non-reactive with the substrate is improved by energetic surface alloying of the substrate prior to coating. The ion implantation alters the stoichiometry of the substrate, creating a substrate surface which is reactive with the coating. For example, the bonding of TiN to Si.sub.3 N.sub.4 is enhanced by implanting the substrate surface with Ti.

Abstract: Ceramic fibers based on silicon carbide, silicon nitride or silicon carbonitride are treated with hydrofluoric acid, e.g., with a 3% to 30% aqueous solution of HF, to strip surface impurities therefrom, to reduce critical surface defects and to enhance the rupture strength thereof.

Abstract: A CVD method comprises the steps of making a plasma self-cleaning within a chamber using a gas which includes fluorine, coating an inside of the chamber by a first layer of a material which includes silicon and nitrogen, and forming a second layer on a predetermined surface within the chamber by a chemical vapor deposition. The second layer is made of a material which includes a quantity of nitrogen smaller than a quantity of nitrogen included in the first layer.