Oxygen Containing Atmosphere Patents (Class 427/539)
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Patent number: 7220460Abstract: A method of forming a layer or layers are disclosed which comprises the steps of transporting a substrate having a first surface and a second surface on the side opposite the first surface to a gap formed between a first electrode and a second electrode opposing each other, the second surface having a coefficient of kinetic friction of not more than 0.9; and subjecting the first surface of the substrate to plasma discharge treatment to form the layer at atmospheric pressure or at approximately atmospheric pressure while supplying a reactive gas to the gap.Type: GrantFiled: August 26, 2005Date of Patent: May 22, 2007Assignee: Konica CorporationInventors: Takashi Murakami, Kazuhiro Fukuda
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Patent number: 7169440Abstract: A method is provided for plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an oxygen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluoro-carbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.Type: GrantFiled: September 30, 2002Date of Patent: January 30, 2007Assignee: Tokyo Electron LimitedInventors: Vaidyanathan Balasubramaniam, Masaaki Hagiwara, Eiichi Nishimura, Kouichiro Inazawa
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Patent number: 7166342Abstract: A heat-shrinkable resin film which has heat shrinkage in the maximum shrinkage direction of 20% or higher when a 10 cm×10 cm square sample cut out thereof is immersed in hot water at 85° C. for 10 seconds, pulled out, subsequently immersed in water at 25° C. for 10 seconds, and then pulled out, characterized in that a content of nitrogen atoms in a surface of the film is 0.1% to 3.0% and the surface of the film has wet tension of 36 mN/m or higher; and a film roll obtained by winding up the heat-shrinkable resin film characterized in that when the rolled film is sampled at a first sampling part located up to 2 m apart from the end of the rolled film and at other sampling parts located after the first sampling part at intervals of about 100 m and an average content of nitrogen atoms of each sample is calculated, then the content of nitrogen atoms of each sample is within the ±0.8% range based on the above average content of nitrogen atoms.Type: GrantFiled: December 26, 2002Date of Patent: January 23, 2007Assignee: Toyo Boseki Kabushiki KaishaInventors: Satoshi Hayakawa, Norimi Tabota, Hiroshi Nagano
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Patent number: 7141277Abstract: A method for preparing high-use temperature, light-weight polymer/inorganic nanocomposite materials with enhanced thermal stability and performance characteristics, which comprises treating a polymer/inorganic nanocomposite material with oxygen plasma under conditions which result in a thin, protective, ceramic-like layer at the surface of the thus-treated nanocomposite material.Type: GrantFiled: March 4, 2003Date of Patent: November 28, 2006Assignee: The United States of America as represented by the Secretary of the Air ForceInventors: Richard A. Vaia, Hao Fong, Jeffrey H. Sanders
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Patent number: 7077935Abstract: O2 and H2O barrier materials suitable for the protection of LCDs and flexible OLEDs are fabricated on a polymer substrate using dense inorganic barrier layers. A polymer surface having a low surface roughness has an inorganic layer of aluminum or silicon oxides deposited thereupon using ion-assisted vacuum deposition with an argon ion gun, which treatment surprisingly provides a smoothing effect on the surface of the polymer. By pretreatment of prefabricated polymeric film with ion-gun enhanced plasma in the presence of oxygen, commercially available heat-stabilized PET and PEN films can be directly employed as substrates. Protective polymer layers are optionally coated upon the thin inorganic barrier layer.Type: GrantFiled: May 1, 2002Date of Patent: July 18, 2006Assignee: General AtomicsInventors: John P. Ziegler, John R. Piner
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Patent number: 7078356Abstract: A low k interlevel dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. An oxide comprising interlevel dielectric layer comprising carbon and having a dielectric constant no greater than 3.5 is formed over the substrate. After forming the carbon comprising dielectric layer, it is exposed to a plasma comprising oxygen effective to reduce the dielectric constant to below what it was prior to said exposing. A low k interlevel dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. In a chamber, an interlevel dielectric layer comprising carbon and having a dielectric constant no greater than 3.5 is plasma enhanced chemical vapor deposited over the substrate at subatmospheric pressure.Type: GrantFiled: March 19, 2002Date of Patent: July 18, 2006Assignee: Micron Technology, Inc.Inventors: Weimin Li, Zhiping Yin, William Budge
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Patent number: 7033648Abstract: A method to selectively metallize polyimide with an all-electroless process.Type: GrantFiled: December 30, 1996Date of Patent: April 25, 2006Assignee: International Business Machines CorporationsInventors: Fuad E. Doany, Jeffrey R. Marino, Carlos J. Sambucetti, Ravi F. Saraf
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Patent number: 6946166Abstract: A magnetic recording medium according to the invention includes a nonmagnetic substrate made of a polymer resin, the nonmagnetic substrate having been treated to improve an adhesion characteristic thereof; an adhesive layer on the nonmagnetic substrate, a nonmagnetic undercoating layer on the an adhesive layer; a magnetic layer above the nonmagnetic undercoating layer; a protection layer above the magnetic layer; and a liquid lubricant layer on the protection layer. A method of manufacturing the magnetic recording medium described above includes the steps of: treating a nonmagnetic substrate to improve an adhesion characteristic thereof; forming an adhesive layer on the nonmagnetic substrate, the adhesion thereof having been improved; forming a nonmagnetic undercoating layer on the adhesive layer; forming a magnetic layer above the nonmagnetic undercoating layer; forming a protection layer above the magnetic layer; and forming a liquid lubricant layer on the protection layer.Type: GrantFiled: December 12, 2002Date of Patent: September 20, 2005Assignee: Fuji Electric Co., Ltd.Inventors: Akira Iso, Takahiro Shimizu, Naoki Takizawa
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Patent number: 6926932Abstract: A method for forming a silicon oxide layer in the production of the polysilicon film transistor is disclosed. A plasma surface treatment is performed over a substrate after an amorphous silicon layer has been formed on the substrate by PECVD to transform a portion of the amorphous silicon layer into a superficial oxide layer.Type: GrantFiled: May 30, 2003Date of Patent: August 9, 2005Assignee: Toppoly Optoelectronics Corp.Inventor: Hui-Chu Lin
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Patent number: 6913823Abstract: A process for the preparation of water repellent acrylic fiber materials which includes (a) a first step in which the material is subjected to plasma treatment in the presence of a reactive gas or a mixture thereof with a noble gas; and (b) a second step in which the material obtained in step (a) is subjected to waterproofing by means of (i) traditional resin finish or (ii) with plasma generated in the presence of fluorinated compounds. The materials made of acrylic fiber obtained by the process have a waterproofing degree higher than 25 cm of water column and have a rigid appearance or good draping and softness depending on whether they have been water-proofed with treatment (i) or (ii). These materials may used in the preparation of covers or sun shields.Type: GrantFiled: July 25, 2002Date of Patent: July 5, 2005Assignee: Montefibre S.p.A.Inventors: Mario Pinton, Raffaele Tedesco, Serafina Pane
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Patent number: 6913796Abstract: Low dielectric constant porous materials with improved elastic modulus and hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material to produce a plasma cured porous dielectric material. Plasma curing of the porous dielectric material yields a material with improved modulus and hardness. The improvement in elastic modulus is typically greater than or about 50%, more typically greater than or about 100%, and more typically greater than or about 200%. The improvement in hardness is typically greater than or about 50%. The plasma cured porous dielectric material can optionally be post-plasma treated. The post-plasma treatment of the plasma cured porous dielectric material reduces the dielectric constant of the material while maintaining an improved elastic modulus and hardness as compared to the plasma cured porous dielectric material.Type: GrantFiled: September 14, 2001Date of Patent: July 5, 2005Assignees: Axcelis Technologies, Inc., Dow Corning CorporationInventors: Ralph Albano, Cory Bargeron, Ivan L. Berry, III, Jeff Bremmer, Phil Dembowski, Orlando Escorcia, Qingyuan Han, Nick Sbrockey, Carlo Waldfried
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Patent number: 6902774Abstract: A method of manufacturing a device includes activating a gas containing at least one of hydrogen and of nitrogen by a hollow cathode discharge and exposing a first surface of a first material to the activated gas, thereby generating at the first surface an enrichment of at least one of hydrogen and of nitrogen and applying a further treatment to the enriched surface.Type: GrantFiled: July 25, 2002Date of Patent: June 7, 2005Assignee: Inficon GmbHInventor: Guenther Nicolussi
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Patent number: 6900138Abstract: The present invention includes a method for preventing distortion in semiconductor fabrication. The method comprises providing a substrate comprising a film comprising silicon nitride. The substrate is treated in a vacuum of about 3.0-6.5 Torr in an atmosphere comprising oxygen plasma wherein the oxygen plasma flow rate is at least about 300 sccm oxygen. A resist is applied to the treated substrate and the resist is patterned over the treated substrate.Type: GrantFiled: March 1, 1999Date of Patent: May 31, 2005Assignee: Micron Technology, Inc.Inventors: Zhiping Yin, Mark Fischer
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Patent number: 6890605Abstract: An insulating film for semiconductors which has excellent adhesion to films formed by CVD and is useful as a dielectric film in semiconductor devices and the like is provided.Type: GrantFiled: September 24, 2002Date of Patent: May 10, 2005Assignee: JSR CorporationInventors: Michinori Nishikawa, Manabu Sekiguchi, Matthias Patz, Mutsuhiko Yoshioka, Atsushi Shiota, Kinji Yamada
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Patent number: 6878419Abstract: The application discloses methods of plasma treatment that employ an ion sheath in a capacitively-coupled system to increase the hydrophilicity of porous articles, including microporous articles having pore sizes of 0.05 to 1.5 micrometers, both on their surfaces and in their pores such that the articles' bulk wetting properties are improved.Type: GrantFiled: December 14, 2001Date of Patent: April 12, 2005Assignee: 3M Innovative Properties Co.Inventors: Moses Mekala David, Brinda Balasubramaniam Lakshmi
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Patent number: 6875480Abstract: The present invention is to provide a method of enhancement of electrical conductivity for conductive polymer by use of field effect control, wherein on the substrate, whose surface was treated with a field, was coated by a containing monomer or oligomer solution of conductive polymer, through a field mechanism a monomer or oligomer of conductive polymer can demonstrate the sequential order molecular structure layer on the substrate, on this molecular structure layer was coated by an available amount of oxidant to proceed the polymerization, it was subjected to a field during polymerization to form 3-dimensional order stacking structure in order to increase the functional characteristic and electrical conductivity for conductive polymer.Type: GrantFiled: February 27, 2002Date of Patent: April 5, 2005Assignee: Industrial Technology Research InstituteInventors: Tsung-Hsiung Wang, Jing-Pin Pan
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Patent number: 6861104Abstract: A method of enhancing adhesion strength of a boro-silicate glass (BSG) film to a silicon nitride film is provided. A semiconductor substrate with a silicon nitride film formed thereon is provided. The silicon nitride film is then exposed to oxygen-containing plasma such as ozone plasma. A thick BSG film is then deposited onto the treated surface of the silicon nitride film. By pre-treating the silicon nitride film with ozone plasma for about 60 seconds, an increase of near 50% of Kapp of the BSG film is obtained.Type: GrantFiled: May 22, 2002Date of Patent: March 1, 2005Assignee: United Microelectronics Corp.Inventors: Hsin-Chang Wu, Cheng-Yuan Tsai, Yu-Wen Fang, Neng-Hui Yang
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Patent number: 6835423Abstract: An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element (10) including a first electrode (14), a second electrode (18) and a spacer layer (16). The first electrode (14) and the second electrode (18) include ferromagnetic layers (26 & 28). A spacer layer (16) is located between the ferromagnetic layer (26) of the first electrode (14) and the ferromagnetic layer (28) of the second electrode (16) for permitting tunneling current in a direction generally perpendicular to the ferromagnetic layers (26 & 28). The device includes insulative veils (34) characterized as electrically isolating the first electrode (14) and the second electrode (18), the insulative veils (34) including non-magnetic and insulating dielectric properties.Type: GrantFiled: January 22, 2003Date of Patent: December 28, 2004Assignee: Freescale Semiconductor, Inc.Inventors: Eugene Youjun Chen, Mark Durlam, Saied N. Tehrani, Mark DeHerrera, Gloria Kerszykowski, Kelly Wayne Kyler
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Patent number: 6830784Abstract: A substrate containing a natural polymeric material is modified by: A) treating the substrate containing the natural polymeric material with a modifying agent selected from the group consisting of organo-functional coupling agents and multi-functional amine containing organic compounds; and B) optionally exposing the substrate containing natural polymeric material with one or more treatments selected from the consisting of: i) subjecting the substrate to extraction with a solvent to reduce the content of extractable materials associated with the natural polymeric material prior to or during treatment with the modifying agent; ii) treatment with a physical field selected from static physical fields, high-frequency alternating physical fields and combinations of two or more thereof either prior to, during or after treatment with the modifying agent; and iii) oxidation of at least part of the natural polymeric material prior to or during treatment with the modifying agent.Type: GrantFiled: July 24, 2002Date of Patent: December 14, 2004Assignee: Commonwealth Scientific and Industrial Research OrganisationInventors: Wojciech Stanislaw Gutowski, Lee Joy Russell, Alexander Bilyk, Pamela Maree Hoobin, Sheng Li, Can Filippou, Mark Spicer
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Patent number: 6827986Abstract: The present invention is a grafted polymer electrolyte membrane prepared by first preparing a precursor membrane comprising a polymer which is capable of being graft polymerized, exposing the surface of the precursor membrane to a plasma in an oxidative atmosphere, then graft-polymerizing a side chain polymer to the plasma treated precursor membrane and introducing a proton conductive functional group to the side chain. The resulting grafted polymer electrolyte membrane has excellent stability and performance when used in a proton-exchange membrane fuel cell or for electrolysis of water.Type: GrantFiled: February 16, 2001Date of Patent: December 7, 2004Assignee: Aisin Seiki Kabushiki KaishaInventors: Michio Asukabe, Michiaki Kato, Takumi Taniguchi, Yu Morimoto, Masaya Kawasumi
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Patent number: 6818259Abstract: Porous organic articles having no surface functionality may be treated by remote plasma discharge to thereby introduce functionality to the surface of the article. The functionality is introduced throughout the article's surface, including the exterior surface and the surfaces of the pores. Little or no degradation of the porous organic article occurs as a result of the functionalization. Amino, hydroxyl, carbonyl and carboxyl groups may be introduced to the article. In this way, an essentially inert hydrophobic porous article, made from, for example, polyethylene, can have its surface modified so that the surface becomes hydrophilic. The remote plasma discharge process causes essentially no change in the bulk properties of the organic article. The remote plasma discharge process is preferably conducted so that no photons, and particularly no ultraviolet radiation, is transmitted from the plasma glow to the porous article.Type: GrantFiled: November 23, 1998Date of Patent: November 16, 2004Assignee: The United States of America as represented by the National Aeronautics and Space AdministrationInventor: Steven L. Koontz
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Patent number: 6759098Abstract: Low dielectric constant film materials with improved elastic modulus. The method of making such film materials involves providing a porous methyl silsesquioxane based dielectric film material produced from a resin molecule containing at least 2 Si—CH3 groups and plasma curing the porous film material to convert the film into porous silica. Plasma curing of the porous film material yields a film with improved modulus and outgassing properties. The improvement in elastic modulus is typically greater than or about 100%, and more typically greater than or about 200%. The plasma cured porous film material can optionally be annealed. The annealing of the plasma cured film may reduce the dielectric constant of the film while maintaining an improved elastic modulus as compared to the plasma cured porous film material. The annealed, plasma cured film has a dielectric constant between about 1.1 and about 2.4 and an improved elastic modulus.Type: GrantFiled: July 16, 2001Date of Patent: July 6, 2004Assignees: Axcelis Technologies, Inc., Chemat Technology, Inc.Inventors: Qingyuan Han, Carlo Waldfried, Orlando Escorcia, Ralph Albano, Ivan L. Berry, III, Jeff Jang, Ian Ball
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Patent number: 6709718Abstract: A method is provided for surface treating a porous sheet material. The surface treatment involves contacting at least one porous surface of the film with plasma at atmospheric pressure and a plasma generating electrode frequency of greater than 1 MHz. This method provides treatment which penetrates into the pores of the sheet material.Type: GrantFiled: April 10, 2001Date of Patent: March 23, 2004Assignee: ExxonMobil Oil CorporationInventor: Jeffrey J. O'Brien
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Patent number: 6709767Abstract: Disclosed is a spin-valve sensor employing one or more in-situ oxidized films as cap and/or gap layers in order to achieve an increased GMR coefficient and improved thermal stability. A fabrication method comprises depositing multilayer metallic films on a wafer in ion-beam and DC-magnetron sputtering modules of a sputtering system, and then transferring the wafer in a vacuum to an oxidation module where in-situ oxidation is conducted. When the method is used to form a cap layer, the cap layer may only be partially oxidized. A magnetic-field annealing may be subsequently conducted without the substantial occurrence of interface mixing and oxygen diffusion during the anneal process. The resulting spin-valve sensor exhibits an increased GMR coefficient, possibly due to induced specular scattering of conduction electrons and improved thermal stability mainly due to the protection of an underlying sensing layer from interface mixing and oxygen diffusion during the annealing process.Type: GrantFiled: July 31, 2001Date of Patent: March 23, 2004Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Tsann Lin, Daniele Mauri
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Publication number: 20040053026Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained by this process. A post deposition process is implemented to obtain the desired properties (stability of optical properties with respect to laser irradiation and acid treatment) for use in industry. A special fabrication process for the sputter target is implemented to lower the defects of the film.Type: ApplicationFiled: September 8, 2003Publication date: March 18, 2004Inventors: Marie Angelopoulos, Katherina E. Babich, Cameron James Brooks, S. Jay Chey, C. Richard Guarnieri, Michael Straight Hibbs, Kenneth Christopher Racette
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Patent number: 6699530Abstract: The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber.Type: GrantFiled: February 28, 1997Date of Patent: March 2, 2004Assignee: Applied Materials, Inc.Inventors: Michal Danek, Marvin Liao, Eric Englhardt, Mei Chang, Yeh-Jen Kao, Dale R. DuBois, Alan F. Morrison
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Patent number: 6635124Abstract: A process of forming a ceramic coating on a component. The process generally entails placing the component in a coating chamber containing oxygen and an inert gas, heating a surface of the component to a temperature of about 100 to about 150° C., and then generating a metal vapor from at least one metal target using a microwave-stimulated, oxygen-containing sputtering technique. The metal vapor is then caused to condense on the component surface to form a metal layer, after which the metal layer is treated with a microwave-stimulated plasma to oxidize the metal layer and form an oxide layer having a columnar microstructure. The generating, condensing and treating steps can be repeated any number of times to form multiple oxide layers that together constitute the ceramic coating.Type: GrantFiled: August 29, 2002Date of Patent: October 21, 2003Assignee: General Electric CompanyInventors: William Randolph Stowell, Bangalore Nagaraj
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Patent number: 6630243Abstract: The present invention provides an optically clear, hydrophilic coating upon the surface of a silicone medical device by sequentially subjecting the surface of the lens to plasma polymerization in a hydrocarbon-containing atmosphere and then covalently attaching a preformed hydrophilic polymer to the surface of the carbon coating. The invention is especially useful for forming a biocompatible coating on a silicone contact lens.Type: GrantFiled: May 20, 1999Date of Patent: October 7, 2003Assignee: Bausch & Lomb IncorporatedInventors: Paul L. Valint, Jr., Daniel M. Ammon, Jr., Joseph A. McGee, George L. Grobe, III, Richard M. Ozark
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Patent number: 6613432Abstract: Coatings, devices and methods are provided, wherein the contacting surface of a medical device with at least one contacting surface for contacting a bodily fluid or tissue is modified by plasma treatment in a plasma comprising nitrogen-containing molecules and oxygen-containing molecules. The nitrogen-containing molecules include NH3, (NH4)+, N2O, NO, NO2 and N2O4, and the oxygen-containing molecules include O2 and O3. The plasma-modified contacting surface exhibits decreased adhesion of at least some mammalian cells, such as platelets and leukocytes, decreased restenosis when used with stents, and increased apoptosis. Additional layers may be applied, including plasma polymerized hydrocyclosiloxane monomers, amine-providing groups such as N-trimethylsilyl-allylamine, polyoxyalkylene tethers, and bioactive compounds.Type: GrantFiled: December 21, 2000Date of Patent: September 2, 2003Assignee: BioSurface Engineering Technologies, Inc.Inventors: Paul O. Zamora, Shigemasa Osaki, Meng Chen
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Patent number: 6610373Abstract: In a device for forming magnetic film which deposits magnetic material on a substrate 12, a device is provided which, before the magnetic film is formed in a magnetic film-forming chamber 11, cleans one or both of the film-forming face and reverse face of the substrate 12 in a cleaning processing chamber 13. The cleaning mechanism carries out cleaning by placing a substrate on a horseshoe-shaped insulator substrate-holding part 51 which moves up and down, and emission of gas from the reverse face of the substrate and the like is brought about by generating Ar plasma between the upper periphery of the substrate, the substrate and a lower insulator 61 of the substrate.Type: GrantFiled: October 10, 2001Date of Patent: August 26, 2003Assignee: Anelva CorporationInventors: Daisuke Nakajima, Koji Tsunekawa, Naoki Watanabe
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Patent number: 6596346Abstract: A method for fabricating silicone elastomer stamps with hydrophilic surfaces is provided. The concept of polymer grafting is used to produce the stamps. The stamps thus produced have the great advantage that grafting of a thin hydrophilic polymer on a hydrophobic PDMS surface can render PDMS stamps permanently hydrophilic. With such stamps it becomes possible to print aqueous or highly polar inks reproducibly over days and weeks.Type: GrantFiled: September 14, 2001Date of Patent: July 22, 2003Assignee: International Business Machines CorporationInventors: Andre Bernard, Emmanuel Delamarche, Christian Donzel, Jöns G. Hilborn, Bruno Michel, Richard Stutz, Heiko Wolf
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Patent number: 6572934Abstract: In manufacturing a magnetic recording disk, a magnetic film for a recording layer is deposited on a substrate of the magnetic recording disk in a magnetic-film deposition chamber, and the substrate is transferred from the magnetic-film deposition chamber to a lubricant-layer preparation chamber without exposing the substrate to the atmosphere. Then, a lubricant layer is prepared on the substrate in the lubricant-layer preparation chamber.Type: GrantFiled: February 1, 2001Date of Patent: June 3, 2003Assignees: Anelva Corporation, Nihon Micro Coating Co., Ltd.Inventors: Naoki Watanabe, Nobuyoshi Watanabe, Kazunori Tani, Shinji Furukawa, Hiromi Sasaki, Osamu Watabe
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Patent number: 6565930Abstract: A method and apparatus are taught for treating paper webs for obtaining the proper surface characteristics to promote adhesion of nonphotosensitive coating materials and/or layers typically coated thereon. The web is passed through a high-voltage sheath region or dark space of the plasma generated by a powered electrode residing in a discharge zone. The frequency of the driving voltage must be above a lower bound dictated by the properties of the paper support and the plasma, and it must be below an upper bound beyond which the sheath voltages drop significantly and it is observed that the benefits of this approach diminish. The dark space is generated by a treatment electrode in a treatment zone. There is a counter electrode having a surface area in said treatment zone which is at least as great as the surface area of the treatment electrode.Type: GrantFiled: May 19, 2000Date of Patent: May 20, 2003Assignee: Eastman Kodak CompanyInventors: Jeremy M. Grace, Louis J. Gerenser, Christine J. Landry-Coltrain, Kurt D. Sieber, Michael J. Heinsler, Dennis R. Freeman
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Patent number: 6551665Abstract: A method for depositing highly conformal silicate glass layers via chemical vapor deposition through the reaction of TEOS and O3 is disclosed. The entire method, which can be performed in a single cluster tool and even in a single chamber, begins by placing an in-process semiconductor wafer having multiple surface constituents in a plasma-enhanced chemical vapor deposition chamber. A “clean” silicate glass base layer that is substantially free of carbon particle impurities on an upper surface is then formed on the wafer surface in one of two ways. The first employs plasma-enhanced chemical vapor deposition using TEOS and diatomic oxygen gases as precursors to first deposit a “dirty” silicate glass base layer having carbon particle impurities imbedded on an upper surface.Type: GrantFiled: April 17, 1997Date of Patent: April 22, 2003Assignee: Micron Technology, Inc.Inventor: Ravi Iyer
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Patent number: 6528129Abstract: By carrying out a plasma discharge treatment for a support in which an image receiving layer comprising a void structure is formed, the void structure of the surface layer is subjected to hydrophilic treatment to enhance the water absorption capability of a recording media in the thickness direction (in the depth direction) and to enhance image receiving capability. Further, by making a portion more adjacent to the surface hydrophobic, an image disorder after receiving ink droplets is minimized. Still further, by continually carrying out an image receiving layer forming plasma treatment, it is possible to more efficiently produce an ink jet recording medium.Type: GrantFiled: February 15, 2000Date of Patent: March 4, 2003Assignee: Konica CorporationInventor: Yoshikazu Kondo
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Patent number: 6521300Abstract: A method of coating an organic polymeric low-k dielectric layer starts by depositing a protective layer composed of silicon nitride (SiN) or silicon carbide (SiC) on a substrate. A hydrophilic surface is produced across a top surface of the protective layer by performing a fast surface treatment that subjects the surface to an oxygen-containing plasma at a pre-selected low radio frequency power. An adhesion promoter coating layer is formed over the top surface of the protective layer. The coating layer has promoter molecules, each promoter molecule having at least one hydrophobic group and one hydrophilic group. The low-k dielectric layer is spin-on coated onto the coating layer. Formation of the hydrophilic surface alters an orientation of the adhesion promoter molecules to facilitate the hydrophilic group of each of the adhesion promoter molecules facing the hydrophilic surface while the hydrophobic group of the adhesion promoter molecules faces the low-k dielectric layer.Type: GrantFiled: August 16, 2001Date of Patent: February 18, 2003Assignee: United Microelectronics Corp.Inventors: Tsung-Tang Hsieh, Cheng-Yuan Tsai, Hsin-Chang Wu, Chih-An Huang
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Patent number: 6503989Abstract: A monolayer polyolefin-based printable article includes 0.1 to 5% by weight of at least one polyaminoalkylene, and is characterized in that it has been treated by means of an oxidative surface treatment, such as a corona treatment. A process for the manufacture of a polyolefin-based printable article, according to which at least one surface region of the article, including at least one polyolefin and from 0.1 to 5% by weight of at least one polyaminoalkylene, involves subjecting the region to an oxidative surface treatment. A printing process, according to which a polyolefin-based article, including from 0.1 to 5% by weight of at least one polyaminoalkylene and treated by means of an oxidative surface treatment, utilizes an electrophotography technique to print on the article.Type: GrantFiled: July 24, 2000Date of Patent: January 7, 2003Assignee: Solvay (Societe Anonyme)Inventor: Zdenek Hruska
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Patent number: 6503818Abstract: A method for forming a composite dielectric layer comprising a low dielectric constant dielectric layer upon a substrate employed within a microelectronics fabrication. There is provided a patterned microelectronics layer upon a substrate employed within a microelectronics fabrication. There is then formed upon the microelectronics substrate a low dielectric constant dielectric layer. There is then treated the low dielectric constant dielectric layer with a plasma, forming a plasma treated low dielectric constant dielectric layer. There is then formed upon the plasma treated low dielectric constant dielectric layer a silicon containing dielectric layer with enhanced adhesion thereupon.Type: GrantFiled: April 2, 1999Date of Patent: January 7, 2003Assignee: Taiwan Semiconductor Manufacturing CompanyInventor: Syun-Ming Jang
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Patent number: 6500499Abstract: Complex mixed metal containing thin films can be deposited by CVD from liquid mixtures of metal complexes without solvent by direct liquid injection and by other precursor dispersing method such as aerosol delivery with subsequent annealing to improve electrical properties of the deposited films. This process has potential for commercial success in microelectronics device fabrication of dielectrics, ferroelectrics, barrier metals/electrodes, superconductors, catalysts, and protective coatings. Application of this process, particularly the CVD of ZrSnTiOx (zirconium tin titanate, or ZTT) and HfSnTiOx (hafnium tin titanate, or HTT) thin films has been studied successfully.Type: GrantFiled: March 10, 2000Date of Patent: December 31, 2002Assignee: Air Products and Chemicals, Inc.Inventors: Yoshihide Senzaki, Arthur Kenneth Hochberg, David Allen Roberts, John Anthony Thomas Norman, Glenn Baldwin Alers, Robert McLemore Fleming
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Patent number: 6485808Abstract: An optical disk for recording/reproducing information tends to have fine irregularities on its substrate surface that cause an increase in noise, which irregularities are formed during the process of forming the recording layer, which is capable of changing physically or chemically in response to irradiation of laser light. This problem can deteriorate the recording and reproduction characteristics and bring about a defect on a life test or on the storage ability on the disk. To solve this problem, a method of manufacturing an optical disk having a pits-and-lands pattern employs an organic material which is modified by ultraviolet light irradiation. The transmission of the substrate is not more than 50% at one wavelength in a wavelength region from 300 to 375 nm. As a result of the ultraviolet ray irradiation, the surface of an optical disk substrate is smoothed so as to effect a reduction of the substrate noise and an improvement of the recording and reproduction characteristics.Type: GrantFiled: January 10, 2001Date of Patent: November 26, 2002Assignee: Hitachi, Ltd.Inventors: Yumiko Anzai, Motoyasu Terao, Tetsuya Nishida, Mokoto Miyamoto
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Patent number: 6472048Abstract: A magnetic recording medium having an excellent surface smoothness comprising a substrate and a maghemite thin film formed on the substrate. The maghemite thin film has a thickness of 10 to 50 nm and a surface roughness represented by an average surface roughness (Ra) of 0.1 to 0.7 nm and a max height (Rmax) of 1 to 10 nm. The magnetic recording medium exhibits an excellent surface smoothness without deterioration in high coercive force.Type: GrantFiled: September 29, 2000Date of Patent: October 29, 2002Assignee: Toda Kogyo CorporationInventor: Yasuo Kakihara
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Publication number: 20020102415Abstract: The present invention provides an optically clear, hydrophilic coating upon the surface of a silicone medical device by sequentially subjecting the surface of the lens to plasma polymerization in a hydrocarbon-containing atmosphere and then covalently attaching a preformed hydrophilic polymer to the surface of the carbon coating. The invention is especially useful for forming a biocompatible coating on a silicone contact lens.Type: ApplicationFiled: May 20, 1999Publication date: August 1, 2002Inventors: PAUL L. VALINT, DANIEL M. AMMON, JOSEPH A. MCGEE, GEORGE L. GROBE, RICHARD M. OZARK
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Patent number: 6419993Abstract: A production process for a magnetic recording medium comprising a non-magnetic substrate, a non-magnetic undercoat film, a magnetic film, and a protective film predominantly comprising carbon, which protective film is formed through a plasma CVD method by use of carbon-containing gas as a source and which process comprises applying an oxygen plasma to carbon deposits on the inner walls of a chamber or carbon present in the chamber for transformation.Type: GrantFiled: March 30, 2000Date of Patent: July 16, 2002Assignee: Showa Denko K.K.Inventors: Kimie Takagi, Mikio Suzuki, Emi Shimaoka, Noriyuki Miyamoto
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Patent number: 6406759Abstract: An OAUGD plasma is generated using, for example, paraelectric or peristaltic electrohydrodynamic (EHD) techniques, in the plasma generator of a remote-exposure reactor, wherein one or more active species, especially oxidizing species in the plasma are convected away from the plasma-generation region and directed towards a workpiece that is located outside of the plasma-generation region (e.g., within an optional remote-exposure chamber configured to the plasma generator). In this way, the workpiece can be subjected to the one or more active species without directly being subjected to either the plasma or to the electric fields used to generate the plasma. The plasma generator may have a set of flat panels arranged within an air baffle to convect the active species in a serpentine manner through the plasma generator.Type: GrantFiled: July 28, 1999Date of Patent: June 18, 2002Assignee: The University of Tennessee Research CorporationInventor: J. Reece Roth
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Patent number: 6387379Abstract: A method for modifying the surface of a material adapted for contact with tissue of a human or non-human animal to impart biofunctional, bioactive or biomimetic properties to the surface comprising: (a) exposing the surface to a solution comprising (1) an ethylenically unsaturated monomer or mixture thereof capable, via the ethylenic unsaturation, of gamma irradiation or electron beam induced polymerization, and (2) at least one biofunctional agent; and (b) irradiating the surface with gamma or electron beam irradiation in the presence of the solution to thereby form on the surface a graft polymerized coating, the coating having physically entrapped therein or chemically bonded thereto molecules of the at least one biofunctional agent which imparts biofunctional or biomimetic properties to the surface; wherein the gamma or electron beam irradiation induced polymerization is conducted under one of the following conditions: A. (i) monomer concentration in the solution in the range of from about 0.Type: GrantFiled: February 28, 1994Date of Patent: May 14, 2002Assignee: University of FloridaInventors: Eugene P. Goldberg, Ali Yahiaoui, Khalid Mentak, Theresa Rivero Erickson, James Seeger
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Patent number: 6383575Abstract: A method for metallising solid substrates involves the use of non-equilibrium plasma treatment of a supported metal precursor layer. This technique can be used to make pure metal or alloy coatings. An oxidising plasma pre-treatment step of the supported metal precursor layer, or the incorporation of a plasma polymer coupling layer prior to metallisation, can result in improved adhesion. The method can be applied to the preparation of lithographic printing plate precursors.Type: GrantFiled: February 3, 2000Date of Patent: May 7, 2002Assignee: Agfa-GevaertInventors: Jas Pal Singh Badyal, Jonathan Mark Crowther, Allen Peter Gates
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Patent number: RE38752Abstract: A method of contacting s substrate having a surface containing hydroxyl groups with a non-aqueous solution containing a material having a chrolosilyl group; washing if desired; coating the substrate with a non-aqueous solvent containing a compound having a fluorocarbon group and a chlorosilane group or a solvent containing a compound containing a fluorocarbon group and an alkoxysilane; and baking the substrate if necessary in order to form a fluorocarbon-based polymer coating film chemically bonded to the substrate surface. The hydroxyl groups on the substrate surface and chlorosilyl groups are reacted to form a thin film having a large number of silanol groups (—SiOH) capable of connecting the polymer coating film to the substrate to form a heat-, weather-, and wear-resistant film on various surfaces.Type: GrantFiled: July 9, 1998Date of Patent: July 5, 2005Assignee: Matsushita Electric Industrial Co., LtdInventors: Kazufumi Ogawa, Mamoru Soga
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Patent number: RE39045Abstract: A method of contacting a substrate having a surface containing hydroxyl groups with a non-aqueous solution containing a material having a chrolosilyl group; washing if desired; coating the substrate with a non-aqueous solvent containing a compound having a fluorocarbon group and a chlorosilane group or a solvent containing a compound containing a fluorocarbon group and an alkoxysilane; and baking the substrate if necessary in order to form a fluorocarbon-based polymer coating film chemically bonded to the substrate surface. The hydroxyl groups on the substrate surface and chlorosilyl groups are reacted to form a thin film having a large number of silanol groups (—SiOH) capable of connecting the polymer coating film to the substrate to form a heat-, weather-, and wear-resistant film on various surfaces.Type: GrantFiled: October 24, 2000Date of Patent: March 28, 2006Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Kazufumi Ogawa, Mamoru Soga
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Patent number: RE37698Abstract: A method of contacting a substrate having a surface containing hydroxyl groups with a non-aqueous solution containing a material having a chrolosilyl group; washing if desired; coating the substrate with a non-aqueous solvent containing a compound having a fluorocarbon group and a chlorosilane group or a solvent containing a compound containing a fluorocarbon group and an alkoxysilane; and baking the substrate if necessary in order to form a fluorocarbon-based polymer coating film chemically bonded to the substrate surface. The hydroxyl groups on the substrate surface and chlorosilyl groups are reacted to form a thin film having a large number of silanol groups (—SiOH) capable of connecting the polymer coating film to the substrate to form a heat-, weather-, and wear-resistant film on various surfaces.Type: GrantFiled: July 10, 2000Date of Patent: May 14, 2002Assignee: Matsushita Electric Industrial Co.Inventors: Kazufumi Ogawa, Mamoru Soga
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Patent number: RE38087Abstract: The fuel hose of this invention is a fuel hose comprising a tubular fluororesin inner ply and, as laminated onto the peripheral surface thereof, a thermoplastic resin or rubber outer ply, the tubular fluororesin inner ply having been molded from a fluororesin with an F/C ratio, i.e. ratio of the number of fluorine atoms (F) to the number of carbon atoms (C), of not greater than 1.6 and the peripheral surface layer of the fluororesin inner ply having been modified into the following treated layer (A). (A) a layer with a distribution of oxygen atoms and having an F/C ratio, i.e. ratio of the number of fluorine atoms (F) to the number of carbon atoms (C), of not greater than 1.12 and an O/C ratio, i.e. ratio of the number of oxygen atoms (O) to the number of carbon atoms (C), of not less than 0.08.Type: GrantFiled: February 16, 2000Date of Patent: April 22, 2003Assignee: Tokai Rubber Industries, Ltd.Inventors: Katsuhiko Yokoe, Kazuhiro Kato, Koyo Murakami, Eiichi Daikai, Hiroaki Ito