Abstract: A microwave plasma processing apparatus comprises a plasma generation chamber, a processing chamber communicating with the plasma generation chamber, supporting of a substrate to be processed arranged in the processing chamber, a circular waveguide with slots arranged around the plasma generation chamber, and a magnetic field generation unit for generating a cusp magnetic field in the plasma generation chamber. A microwave plasma processing method using this apparatus is provided, to maintain a high-density and large-area uniform plasma, even at a low temperature, and even in a low-pressure region having a pressure of 1 mTorr.

Abstract: The remote-plasma-CVD process for coating or treating large-surface substrates includes exciting an excitation gas located remotely from a substrate surface to be coated or treated in modular plasma source devices arranged either in a linear arrangement or in a planar, grid-like arrangement over the substrate surface and feeding a reactant gas with the excitation gas from the plasma source devices to the substrate surface to excite the reactant gas with the excitation gas and thus form a coating on the substrate surface or treat the substrate surface.

Abstract: A first reactive gas is introduced into a vacuum chamber and a plasma of the thus introduced reactive gas is produced. A second reactive gas is introduced into a radical generating chamber and is dissociated to generate radicals whose density and composition are well controlled. Then, the thus generated radicals are injected into the plasma generated within the vacuum chamber such that an amount of a desired kind of radicals within the plasma is selectively increased or decreased. In this manner, a thin film having an excellent property can be deposited on a substrate placed in the vacuum chamber. Alternatively, a surface of a substrate placed in the vacuum chamber can be processed precisely and selectively.

Abstract: A method and apparatus for forming a large area functional deposited film on the surface of a continuously moving web member by means of a microwave plasma CVD process, characterized in that at the exterior face of the circumferential wall comprising a curved continuously moving web member of the microwave plasma CVD film-forming chamber, a member having a function of transporting the web member while pressing it and being provided with a mechanism capable of controlling the temperature of the web member is disposed.

Abstract: A method of depositing a thin film on a polymer substrate by plasma CVD comprises applying a magnetic field to a plasma generating chamber by activating a magnetic coil placed in the circumference of the plasma generating chamber, the plasma generating chamber having an inlet; introducing a microwave into the plasma generating chamber; introducing an upstream gas into the plasma generating chamber wherein an ECR plasma is generated; vaporizing a feed gas wherein a supply gas is generated and carries the ECR plasma; passing said ECR plasma through a mesh provided between the inlet and a polymer substrate located downstream of the inlet; and depositing a film on the surface of the polymer substrate.

Abstract: A plasma processing apparatus and method controls the temperature of those portions in the processing chamber to which reaction products or gaseous reaction products generated during plasma processing adhere, thereby minimizing the generation of foreign matter and ensuring high yields. A plasma processing gas is supplied to the plasma generation chamber 10 whose pressure is maintained at a predetermined value. Provided in the plasma generation chamber are a specimen mount 11 on which to mount an object to be processed and an evacuation mechanism 16 that evacuates the plasma generation chamber.

Abstract: A plasma generating gas and a reactive gas are fed into a vacuum container. A magnetic field and microwaves for plasma generation are applied to the vacuum container, whereupon plasma is generated by ECR, and whereupon, for example, an SiO.sub.2 or SiOF film is formed on aluminum wiring. In the initial phase of film deposition, the level of the radio-frequency power for plasma lead-in applied to the stage is adjusted, for example, to zero (first value includes zero) in advance. Then, after the SiO.sub.2 or SiOF film has been deposited to a thickness of tens of nanometers, for example, the radio-frequency power for plasma lead-in is adjusted to a normal power level (second value) and applied to the stage. Thereupon, an intensive anisotropic plasma is generated, and a potential distribution corresponding to the self-bias is formed in the plane direction of the wafer. Since the thin SiO.sub.

Abstract: A vacuum processing chamber having a substrate support removably mounted therein. The chamber includes an opening in a sidewall thereof and the opening is large enough to allow the substrate support to be removed from the chamber through the opening. A modular mounting arrangement extends through the opening and removably supports the substrate support in the interior of the chamber at a position located inwardly of an inner sidewall of the chamber. The mounting arrangement includes a mounting flange and a support arm. The mounting flange is attached to an exterior surface of the chamber and the support arm extends between the substrate support and the mounting flange. The chamber includes a single vacuum port in a central portion of an endwall of the chamber spaced from the substrate support. The vacuum port is connected to a vacuum pump which removes gases from the interior of the chamber and maintains the chamber at a pressure below atmospheric pressure.

Abstract: The present invention provides a method for plasma control, in which an electric field is generated in the direction perpendicular to the surface of an object to be processed in plasma atmosphere generated in a processing chamber and another electric field is generated in the direction parallel to the surface, and the direction of ion or electron in plasma atmosphere is controlled by controlling the composite electric field composed of both the electric fields. The invention provides also an apparatus for plasma control provided with a perpendicular electric field generating means for generating an electric field in the direction perpendicular to the surface of the object, and a parallel electric field generating means for generating an electric field in the direction parallel to the surface of the object.

Abstract: A method for excitation of a plasma, characterized in that it comprises the step of subjecting a gas to an electric field generated by an electrode system comprising n electrodes, n being an integer greater than or equal to 3, preferably between 3 and 30, each of the n electrodes being connected to one of the following AC voltages: ##EQU1## where: f is a frequency in the range of 10 to 10000 Hz, preferably 30 to 200 Hz, more preferably 50 to 60 Hz, U.sub.0 is a voltage in the range of 50 to 10000 V,at least one electrode being connected to U.sub.r, at least one electrode being connected to Us and at least one electrode being connected to U.sub.t. The invention also concerns an electrode system for carrying out the method.

Abstract: A rod-like electrode is disposed in a vacuum container, a ring-like electrode is disposed around the rod-like electrode, a tube to be processed is disposed such that the tube is substantially continuous to the ring-like electrode, an interior of the vacuum container is set to a predetermined degree of vacuum for deposition, a gas is introduced into a space between the electrodes, an electric power for forming plasma from the gas is applied while applying a magnetic field, and the plasma produced thereby is supplied into the tube. If the deposition material gas is used, the film is formed on the inner peripheral surface of the tube. If the plasma source gas for sputtering is used, a sputtering voltage is applied to a sputtering target disposed inside the tube, so that the film is formed on the inner peripheral surface of the tube by sputtering the target with ions in the plasma.

Abstract: A sealing element, particularly for shut-off and regulating valves, comprising a tabular, piston-shaped or spherical shut-off body of a ceramic material having a hard material layer containing carbon and silicon applied to a sealing surface of the shut-off body by plasma chemical vapor deposition or plasma polymerization, in a coating chamber. The hard material layer comprises a bonding layer component applied to the sealing surface of the shut-off body and a subsequent sliding layer component. The carbon-containing bonding layer component has a first silicon content favoring adhesion to the sealing surface of the shut-off body and the subsequent carbon-containing sliding layer component having a second silicon content lower than that of the bonding layer component to achieve low coefficients of sliding friction and static friction.

Abstract: A method of producing silicon oxy-nitride films is provided by utilizing a reactant gas mixture of silane, nitrous oxide and nitrogen at a low deposition temperature of less than 250.degree. C. by flowing the reactant gas mixture through a gas inlet manifold which is also an upper electrode in a plasma-enhanced chemical vapor deposition chamber. The gas inlet manifold is the upper plate of a parallel plate plasma chamber for communicating the reactant gas into the chamber. The plate has a plurality of apertures, each comprising an outlet at a chamber or processing side of the plate and an inlet spaced from the processing side, with the outlet being larger than the inlet for enhancing the dissociation and reactivity of the gas.

Abstract: A channel waveguide structure which can be incorporated into VLSI (very large scale integration) integrated circuits uses a SiGe (silicon germanium) alloy core and Si (silicon) top and bottom cladding layers. The core may consist of only a SiGe alloy layer or it may be formed as a superlattice containing Si layers alternating with SiGe alloy layers. LOCOS (locally oxidized silicon) regions are formed on the top cladding layer at spaced locations thereby defining lateral boundaries of channels in the core.

Abstract: A method of depositing a hard silicon oxide based film is provided by controllably flowing a gas stream including an organosilicon compound into a plasma. The organosilicon compound is preferably combined with oxygen and helium and at least a portion of the plasma is preferably magnetically confined adjacent to a substrate during the depositing, most preferably by an unbalanced magnetron. These silicon oxide based films may be reproducibly deposited on small or large substrates with preselected properties.

Abstract: A plasma treatment device for forming a high-quality thin film with fewer surface flaws and etching by preventing the generation of fine powders from deposited films in a film-forming chamber, by means of plasma treatment using gaseous starting materials. The plasma treatment chamber device includes a plasma generation chamber 11, a power-supplying mechanism for supplying power to this chamber, a film-forming chamber 113 to be spatially connected to the plasma generation chamber 11, a magnetic field generation mechanism 14 provided around this film-forming chamber for forming a multicusp magnetic field therein, an evacuation mechanism for evacuating the chamber, a first gas-supplying mechanism 16 for supplying gaseous starting materials and a second gas-supplying mechanism 17 for supplying gaseous materials for forming films. An inner wall surface 113b of the film-forming chamber is located in an area having a multicusp magnetic field with an intensity of from 50 to 200 G.

Abstract: Two methods and corresponding electrode designs are provided for the generation of a plasma at or about one atmosphere. Using these methods, various webs, films and three-dimensional objects are beneficially treated in a reduced amount of time. A first method utilizes a repetitive, asymmetric voltage pulse to generate a plasma discharge between two electrodes. An asymmetric voltage pulse is used to generate a discharge in which a substrate can be exposed predominately to either positive or negative plasma species depending on the voltage polarity used. A second method uses the gap capacitance of an electrode pair and an external inductor in shunt to form a resonant LC circuit. The circuit is driven by a high power radio frequency source operating at 1 to 30 MHz to generate a uniform discharge between the electrode pair. Both methods have temperature controlled discharge surfaces with supply gas temperature, humidity and flow rate control.

Abstract: A process of preparing a moisture-resistant fluorine containing SiO.sub.x film includes steps of supplying reactant gases containing silicon, oxygen and fluorine into a process chamber and generating plasma in the process chamber, supporting a substrate on a substrate support in the process chamber, depositing a fluorine-containing SiO.sub.x film on the substrate by contacting the substrate with the plasma while maintaining temperature of the film above 300.degree. C., and nitriding an exposed surface of the film with a high density plasma. The silicon and fluorine reactants can be supplied by separate gases such as SiH.sub.4 and SiF.sub.4 or as a single SiF.sub.4 gas and the oxygen reactant can be supplied by a pure oxygen gas. The SiH.sub.4 and SiF.sub.4 can be supplied in a ratio of SiH.sub.4 /(SiH.sub.4 +SiF.sub.4) of no greater than 0.5. The process can provide a film with a fluorine content of 2 to 12 atomic percent and argon can be included in the plasma to assist in gap filling.

Abstract: A plasma diffusion control apparatus is provided with a plurality of wires through which current flows in parallel so that lines of magnetic force are generated in a direction parallel to the plasma wall of the diffusion chamber wall. It is preferable that the wires are located in the neighborhood of the diffusion chamber at equal intervals, and arranged so that the direction of the magnetic field generated by wires are parallel to the direction of movement of the plasma. Since the magnetic field is formed in a direction parallel to the inner wall of the diffusion chamber, it is possible to prevent the diffusion of the plasma to the chamber wall. As a result there is no region which is influenced by strong local magnetic fields perpendicular to the plasma chamber wall, so that it is possible to solve the problems caused by substantial amounts of polymer deposition on the inner wall of the plasma diffusion chamber.

Abstract: The present invention relies upon a free space magnetic field in a pulsed laser deposition (PLD) chamber for forming high quality thin films made from diverted ions from a plume evaporated from an ablated target illuminated by a pulsed laser beam. The magnetic field exerts a qv.times.B Lorentz force upon the ions that is orthogonal to the magnetic field and to their direction of travel in the plume, and curves the ions toward the substrate, while neutral particulates continue to pass by the substrate so that the large neutral particulates are not deposited on the substrate. A shield prevents the deposition of plume species in direct line of sight between the target and the substrate so that only charged ions curved by the magnet are deposited on the substrate. A permanent magnet is used to separate charged species from neutral species.

Abstract: Methods of forming polycrystalline semiconductor waveguides include the steps of forming a first cladding layer (e.g., SiO.sub.2) on a substrate (e.g., silicon) and then forming a polycrystalline semiconductor layer (e.g., poly-Si) on the first cladding layer using a direct deposition technique or by annealing amorphous silicon (a-Si) to form a polycrystalline layer, for example. The deposited polycrystalline semiconductor layer can then be polished at a face thereof to have a root-mean-square (RMS) surface roughness of less than about 6 nm so that waveguides patterned therefrom have loss ratings of better than 35 dB/cm. The polished polycrystalline semiconductor layer is then preferably etched in a plasma to form a plurality of polycrystalline strips. A second cladding layer is then formed on the polycrystalline strips to form a plurality of polycrystalline waveguides which provide relatively low-loss paths for optical communication between one or more optoelectronic devices coupled thereto.

Abstract: A method and apparatus for reactive plasma surfacing includes at least two electrodes between which reactive gases are passed. The reactive gases are ionized by the arc between the electrodes, creating a plasma of heated, ionized, reactive gases. The plasma is then applied to a surface to be treated, causing a chemical reaction between the plasma and the surface and resulting in a new diffusional substrate surface on the treated object. The process occurs at substantially atmospheric pressure, and may include an inert gas to shield the process from the surrounding environment.

Abstract: The invention relates to a method of producing a magnetic material for use in an ultrahigh density magnetic recording medium and to the medium itself. The method general includes the steps of vaporing a ferromagnetic lanthanide rare earth, growing clusters of the ferromagnetic lanthanide rare earth at a temperature below the temperature at which the ferromagnetic lanthanide rare earth forms locked-moment clusters, filtering superparamagnetic clusters from locked-moment clusters, and collecting the locked-moment clusters. Preferably, the ferromagnetic lanthanide rare earth is a ytterbium rare earth. Advantageously lanthanide alloys, mixtures of lanthanide rare earths and alloys of a mixture of lanthanide rare earths can be used. The filtering employs a gradient magnetic field to separate superparamagnetic clusters from moment-locked clusters. The gradient field magnet separates the superparamagnetic clusters which deflect by a large amount from the locked-moment clusters which deflect by a small amount.

Abstract: A method for the deposition of a diamond film, which includes the steps of immersing metallic or nonmetallic substrate in and electroless nickel plating bath containing a reducing agent to form a nickel layer; and depositing the diamond film on the electroless nickel plated substrate. As a result, employing electroless plating to form an inter layer is improved. In addition, the diamond film can be formed regardless of the type of materials used.

Abstract: A method for sequentially depositing a barrier composition film as a barrier on a substrate. The film is useful for providing an effective barrier against gas permeability in containers and for extending shelf-life of containers, especially plastic evacuated blood collection devices.

Abstract: A method for forming a material in an opening on a substrate, such as a wafer, using an electron cyclotron resonance-assisted high density plasma physical vapor deposition system. The method comprises the steps of: maintaining a pressure in the range of approximately 1 mTorr to approximately 6 mTorr; generating a plasma by providing a microwave power in the range of approximately 3 kilowatts (kW) to approximately 5 kW; applying a direct current (DC) voltage to a target source of the material in the range of approximately (negative) -600 volts to approximately -1000 volts; providing a current of a predetermined amount to a first electromagnet; and providing a current to a second electromagnet that is less than said predetermined amount, wherein said second electromagnet is disposed below said first electromagnet; and forming a layer of the material in the opening.

Abstract: A method of manufacturing a semiconductor device including the steps of: (a) transporting a semiconductor wafer into a plasma process system, the semiconductor wafer having a semiconductor layer, a field insulating film and a gate insulating film formed on the semiconductor layer, said gate insulating film having a breakdown voltage of B (V) and a thickness of 10 nm or thinner, a conductive layer of a structured antenna formed on the gate insulating film and the field insulating film, the conductive layer having an antenna ratio of 500 or higher, and an insulating material pattern formed on the conductive layer, the insulating material pattern having an opening with an aspect ratio larger than 1; and (b) processing the semiconductor wafer in plasma having an electron temperature of Te (eV) equal to or less than B. With this method, it is possible to prevent damages to a gate insulating film even during a fine pattern process.

Abstract: A method for forming a thin film of a silicon oxide on a silicon substrate is disclosed. An Si oxide film is formed by an ECR plasma. CVD with the use of a silicon compound gas containing fluorine, whereby the generation of particles can be suppressed to improve the quality of the device and the yield, the planarity of the Si oxide film functioning as an interlayer dielectric film or a passivation film can be improved, and the higher speed operation in a semiconductor device can be accomplished.

Abstract: An electrode membrane assembly structure comprises a substrate, two active catalytic layers, each active catalytic layer consisting of micro-particle metal layer(s) and porous conducting layer(s) arranged alternately, and a solid polymer membrane layer being sandwiched in said two active catalytic layers and having protonic conductivity. And a method for manufacturing an electrode membrane assembly comprises the steps of forming an active catalytic layer comprising micro-particle metal layers and porous conducting layers on a substrate by plasma sputtering deposition and chemical vapor deposition (CVD), respectively; then forming a solid polymer membrane layer having protonic conductivity on said active catalytic layer by chemical vapor deposition; and followed by further forming another active catalytic layer on said solid polymer membrane layer, all under the condition of vacuum environment, to obtain the electrode membrane assembly.

Abstract: A process for reducing intrinsic stress and/or hydrogen content of a SiO.sub.x film grown by ECR chemical vapor deposition, wherein a vapor phase etchant is introduced while growing the silicon dioxide film. The presence of the etchant during the plasma deposition process allows for selective removal of high energy silicon dioxide molecules in the growing film thus reducing intrinsic stress within the film. The use of halogen etchants further reduces the amount of hydrogen present as hydroxyl within the film.

Abstract: A method of depositing a titanium-containing conductive thin film, which is capable of depositing a high-quality thin film having a low chlorine content by grounding, through a capacitor, a terminal of a plasma generating electrode disposed in a processing chamber. In the method, one of the introduction terminals of the plasma generating electrode is connected to a radio-frequency power source, the other terminal being grounded through the capacitor. Titanium tetrachloride, hydrogen gas, and nitrogen gas are introduced into the processing chamber at flowrates of 20 ml/min, 30 ml/min and 10 ml/min, respectively. The pressure in the processing chamber is set to about 1 Pa, and the temperature of the substrate is set to 450.degree. to 600.degree. C. A low-pressure, high-density plasma is generated with an output of the radio-frequency power source of 2.5 kW to deposit a titanium nitride film at a rate of about 30 nm/min.

Abstract: A plasma processing apparatus for processing a base substance installed within a processing chamber into which predetermined gases are flowed and which is maintained at a predetermined pressure by producing a plasma within said processing chamber is characterized by comprising plasma producing means for producing the plasma within said processing chamber including at least two ground electrodes provided on external peripheries of said processing chamber, and an rf electrode provided on external periphery of said processing chamber between said two ground electrodes, and magnetic field producing means for producing a magnetic field orthogonal to an electric field formed by said plasma producing means.

Abstract: A method for forming the coated substrate includes a first step of forming the intermediate layer on the substrate in a vacuum chamber, and a second step of forming the hard carbon film on the intermediate layer within the same vacuum chamber. The first step may involve evaporation or sputtering of material atoms for the intermediate layer, either with or without plasma generation, or directly forming a plasma from a gas containing the material atoms. The second step may involve forming a plasma from a gas that contains carbon. Another method involves generating a plasma, applying a high frequency voltage to the substrate so as to generate a self-bias of not more than -20 V, and supplying a reaction gas that contains carbon.

Abstract: A method for producing at least a polymer surface layer on at least part of the inner surface of a hollow article that is at least partially of plastic, comprising coating said at least part of the inner surface of the hollow article by establishing a low pressure gas atmosphere within the hollow article, formin a polymerizable plasma within the article by excitation of the gas atmospher within the article by high-frequency electromagnetic energy, and allowing polymerization of the gas atmosphere to take place, whereby a polymerized coating is applied to said part of the inner surface, the gas atmospherre that forms the plasma containing a component that predominantly forms chains at sufficient speed and can be polymerized under the particular plasma conditions, and a component that forms predominantly branching or cross-linking points and can be polymerized under the particular plasma conditions.

Abstract: A magnetic field enhanced plasma etch reactor system for generating a radially-directed magnetic field within a reaction chamber. The reactor system comprises a reaction chamber for containing a plasma and a plurality of electromagnetic coils disposed about a reaction region within the reaction chamber. When each coil is driven with a current of similar magnitude, the electromagnetic coils produce a radially-directed magnetic field within the reaction chamber. The radially-directed magnetic field uniformly distributes the plasma throughout a bulk plasma region. Consequently, a substrate that is etched by such a uniform plasma has an improved uniformity in the etch pattern on the substrate.

Abstract: A static chuck and a workpiece push-up pin are disposed on a susceptor which is one of opposed electrodes generating plasma. The push-up pin and the susceptor are electrically connected. A grounding circuit which discharges electric charges remaining on the susceptor is disposed in parallel with an RF power supply circuit which supplies RF power to the susceptor. Thus, electric charges remaining in the power supply circuit can be discharged and an abnormal discharging between the push-up pin and the susceptor can be prevented.

Abstract: High-quality SiO.sub.2 films may be deposited at low temperatures by plasma-enhanced chemical vapor deposition using disilane (Si.sub.2 H.sub.6) and nitrous oxide (N.sub.2 O) as silicon and oxygen precursors in an otherwise conventional reactor such as a parallel plate plasma reactor. The properties of the SiO.sub.2 films deposited at 120.degree. C. using Si.sub.2 H.sub.6 and N.sub.2 O were not significantly different from those of conventional SiH.sub.4 -based SiO.sub.2 films deposited at the significantly higher temperature range 250.degree.-350.degree. C. PECVD deposition of SiO.sub.2 films using Si.sub.2 H.sub.6 and N.sub.2 O provides a practical low temperature process for fabricating microdevices and circuits. This low temperature process can be used for deposition in the presence of polymers, semiconductors, and other components that would melt, decompose, or otherwise be sensitive to higher temperatures. Fluorinated silicon oxide may also be deposited at the relatively low temperature of 120.degree.

Abstract: Method and apparatus for treating a workpiece implantation surface by causing ions to impact the workpiece implantation surface. An implantation chamber defines a chamber interior into which one or more workpieces can be inserted. A support positions one or more workpieces within an interior region of the implantation chamber so that implantation surfaces of the workpieces are facing the interior region. A dopant material in the form of a gas is injected into the implantation chamber to cause the gas to occupy a region of the implantation chamber in close proximity to the one or more workpieces. A plasma of implantation material is created within the interior region of the implantation chamber. First and second conductive electrodes positioned within the implantation chamber include conductive surfaces in proximity to the chamber interior occupied by the one or more workpieces. A voltage source outside the chamber relatively biases the first and second conductive electrodes.

Abstract: Composite films consisting of diamond crystallites and hard amorphous films such as diamond-like carbon, titanium nitride, and titanium oxide are provided as protective coatings for metal substrates against extremely harsh environments. A composite layer having diamond crystallites and a hard amorphous film is affixed to a metal substrate via an interlayer including a bottom metal silicide film and a top silicon carbide film. The interlayer is formed either by depositing metal silicide and silicon carbide directly onto the metal substrate, or by first depositing an amorphous silicon film, then allowing top and bottom portions of the amorphous silicon to react during deposition of the diamond crystallites, to yield the desired interlayer structure.

Abstract: The invention concerns a process and a device for surface-modification by physico-chemical reactions with the following steps: a) contacting a solid surface having a crystalline or amorphous structure with a reactive, gaseous fluid (gas, gas mixture, vapour or vapour mixture) which is to interact with the surface; (b) supplying activating energy to the contact area between fluid and surface by means of ions or plasmas, in order to trigger reactions between said partners. In order to improve such a process and device, the activating energy is supplied as ions having at least a double charge and low kinetic energy or plasma streams with a sufficient proportion of ions having at least a double charge and low kinetic energy. The kinetic energy imparted to the ions is selected so that it allows the ions to closely approach the surface atoms but no to enter the surface.

Abstract: A method and apparatus for generating plasmas adapted for chemical vapor deposition, etching and other operations, and in particular to the deposition of large-area diamond films, wherein a chamber defined by sidewalls surrounding a longitudinal axis is encircled by an axially-extending array of current-carrying conductors that are substantially transverse to the longitudinal axis of the chamber, and a gaseous material is provided in the chamber. A high-frequency current is produced in the conductors to magnetically induce ionization of the gaseous material in the chamber and form a plasma sheath that surrounds and extends along the longitudinal axis and conforms to the sidewalls of the chamber. A work surface extending in the direction of the longitudinal axis of the chamber is positioned adjacent a sidewall, exposed to the plasma sheath and treated by the plasma.

Abstract: Passivating coatings are formed on populated electronic boards, such as a sealed chip on board electronic module, or the like, using a high density plasma deposition method that employs an electron cyclotron resonance (ECR) reactor. A populated electronic board is disposed in the electron cyclotron resonance reactor. A high density nitride plasma is generated by means of electron resonance in the reactor. The plasma is formed adjacent to a magnetic field coil where an ECR condition is established. The high density plasma forms a passivating coating that covers the populated electronic board with a silicon nitride passivating layer. To form the plasma, a mixture of silane and ammonia may be injected into the reactor to produce excited atoms that form a substantially oxygen-free nitride passivating coating.

Abstract: A process of depositing thin film coatings by evaporation in which a plasma is formed in an evacuated chamber and a source of material to be evaporated is provided which is evaporated to produce evaporated material. A substrate to be coated is located within the chamber and the evaporated material is caused to pass through the plasma and be to be deposited on the substrate. The plasma is generated by a helicon wave.

Abstract: The method of the present invention provides in a simple manner, the deposition of boron nitride layers with microcrystalline cubic structure which are suitable as insulating layers in VLSI-circuits, as mask membranes in x-ray lithography, as well as coating hard substances. Due to the use of excited starting substances that already contain boron and nitrogen in one molecule and are preferably liquid or solid, and the use of a plasma-CVD-method, the method can be performed using in temperatures of below 500.degree. C. The excitation of the starting substance proceeds preferably in inductive or capacitative fashion in a hollow cathode.

Abstract: A method for forming a film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field is described, characterized by that the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by microwave, and the pulsed wave may be a complex wave having a two-step peak, or may be a complex wave obtained by complexing a pulsed wave with a stationary continuous wave of an electromagnetic wave having the same or different wavelength as that of the pulsed wave. The process enables deposition of a uniform film having an excellent adhesion to the substrate, at a reduced power consumption.

Abstract: A method for sequentially depositing a silicon oxide based film as a barrier on a substrate. The film is useful for providing an effective barrier against gas permeability in containers and for extending shelf-life of containers, especially plastic evacuated blood collection devices.

Abstract: A microwave enhanced chemical vapor deposition method is provided for coating plastic articles with crystalline carbon films. First, a reactive gas including hydrogen gas and a carbon containing raw material gas is introduced into a reaction chamber. Next, a magnetic field is established in the reaction chamber. Microwaves are next introduced into the chamber to create a cyclotron resonance in order to form a plasma of carbon and hydrogen containing gas. The carbon containing plasma deposits a coating of a crystalline and amorphous carbon on a substrate placed within the reaction chamber, while the hydrogen plasma simultaneously etches away the amorphous carbon, thereby leaving only crystalline carbon. The method is particularly adapted for the deposition of crystalline carbon films on plastic materials, as the substrate is not required to be heated in order to receive a layer of crystalline carbon.

Abstract: A method for forming thin films of cubic boron nitride on substrates at low pressures and temperatures. A substrate is first coated with polycrystalline diamond to provide a uniform surface upon which cubic boron nitride can be deposited by chemical vapor deposition.The cubic boron nitride film is useful as a substitute for diamond coatings for a variety of applications in which diamond is not suitable. any tetragonal or hexagonal boron nitride.The cubic boron nitride produced in accordance with the preceding example is particularly well-suited for use as a coating for ultra hard tool bits and abrasives, especially those intended to use in cutting or otherwise fabricating iron.

Abstract: A plasma processing chamber 10 having an inductively coupled plasma (ICP) source 12 mounted therein. The ICP source 12 comprises an antenna 14 encapsulated in epoxy 16 and surrounded by housing 18. The antenna 14 and epoxy 16 are hermetically sealed from plasma formation region 30. The antenna 14 is powered by at least one RF power supply 40 through at least one RF matching network 42. Dielectric capping plate 28 separates ICP source 12 from the plasma formation region 30 and may have a plurality of holes therein to provide a uniform showerhead distribution of process gases.

Abstract: An improved vacuum arc coating apparatus is provided, having a tube defining reaction zone with a plasma channel defined within a series of aligned annular substrate holders, or between an outer wall of an axial chain of substrate holder blocks and the inner wall of the tube. The substrate holders thus act as a liner, confining an arc within the plasma channel. Carrier and plasma-creating gases and the reaction species are introduced into the tube, and the deposition process may be carried out at a pressure between 100 Torr and 1000 Torr. Magnetic coils may be used to create a longitudinal magnetic field which focuses the plasma column created by the arc, and to create a transverse magnetic field which is used to bias the plasma column toward the substrates. Substrates can thus be placed anywhere within the reaction zone, and the transverse magnetic field can be used to direct the plasma column toward the substrate, or the tube itself can be rotated to pass the substrate through the plasma column.