Abstract: A plasma assisted deposition of a very thin inner surface coating inside a plastic or metal container is achieved using insoluble, inert, inorganic substances such as silica, or insoluble metal oxides, or by using mixtures of substances, for example of metals, metal oxides, metal salts and carbon and/or organic radicals, so as to form a flexible structure or lattice, or by using different layers of such structures. It involves locating the container in an evacuated enclosure, placing a vaporizer containing inert inorganic material of a predetermined constituency inside the container, generating a vapor of said material, forming a plasma of said vapor, and depositing a relatively thin coating of said material over a predetermined area of an inside surface of said container, whereby the high temperature of the particles of said coating penetrate said surface due to their heat energy while causing no overall rise in surface temperature because of the low mass flow.

Abstract: A process for gas phase synthesis of diamond using a DC plasma jet where a plasma jet generated by DC arc discharge using a DC plasma torch is made to strike a substrate and grow diamond on the substrate, wherein use is made of a plurality of plasma torch anodes, these are arranged coaxially in a telescoped structure, a magnetic field is applied to these in accordance with need to cause the arc to rotate or the electrode is rotated so as to perform gas phase synthesis of diamond.

Abstract: A process for forming a functional deposited film by way of RF plasma CVD process, comprising generating plasma in a substantially enclosed plasma generation chamber provided with an electrode arranged at the periphery of said plasma generation chamber by applying a RF power through said electrode into said plasma generation chamber, and forming said functional deposited film on a substrate placed in a deposition chamber communicated with said plasma generation chamber, wherein said substrate is arranged so as to isolate from a zone where said plasma is generated, characterized by comprising causing a magnetic field in said plasma generation chamber by means of a magnetic field generation means such that a magnetic flux density with a maximum intensity in the range of from 500 to 1000 Gauss is provided on the inner wall face side of and in parallel to the inner wall face of said plasma generation chamber; supplying a plasma generating raw material gas to a zone where said magnetic field resides; applying a RF

Abstract: A method and apparatus for reducing particulates in a plasma tool using steady state flows includes a device, operatively coupled to a housing in which an object to be processed is positioned, for generating a plasma flow adjacent the object toward a pumping aperture. A pumping mechanism pumps a medium adjacent the object. The medium supports the plasma and entrains particulates in the plasma away from the object and out the pumping aperture. Magnetic fields, produced by multipole magnets forming a ring cusp, are preferably used to produce the plasma flow which is directed radially away from the object to be processed. In a second embodiment, an array of magnets which form a line cusp is provided to produce an opening through which plasma will flow.

Abstract: The present invention relates to a process for manufacturing an optical recording medium comprising a substrate and a laminate of a recording film and an inorganic dielectric film thereon, and the optical recording medium. The process comprises forming the inorganic dielectric film by using a helicon wave plasma CVD method.

Abstract: In order to decompose TiCl.sub.4 to Ti and Cl completely, extremely high energy of more than 400 kcal mol.sup.-1 is required.In the method according to the present invention, use of unequilibrium plasma under reduced pressure is noticed, and it is especially noticed that in the plasma generated by resonance phenomenon, there are high energy electrons, which collide and enhance decomposition and reduction. Therefore, itis possible to form a Ti film without such high substrate temperature as 2000.degree. C., and more, to form a Tifilm with good step coverage even in a fine contact hole.

Abstract: A method of preparing a coated substrate is disclosed. The substrate is coated with a plasma generated polymer containing Si, O, C and H in specific atom ratio wherein the polymer also contains certain functional groups. A power density of about 10.sup.6 to about 10.sup.8 J/Kg is employed in the plasma polymerization process.

Abstract: A chemical vapor deposition (CVD) process and apparatus for the growth of diamond films using vapor mixtures of selected compounds having desired moieties, specifically precursors that provide carbon and etchant species that remove graphite. The process involves two steps. In the first step, feedstock gas enters a conversion zone. In the second step, by-products from the conversion zone proceed to an atomization zone where diamond is produced. In a preferred embodiment a feedstock gas phase mixture including at least 20% water which provides the etchant species is reacted with an alcohol which provides the requisite carbon precursor at low temperature (55.degree.-1100.degree. C.) and low pressure (0.1 to 100 Torr), preferably in the presence of an organic acid (acetic acid) which contributes etchant species reactant. In the reaction process, the feedstock gas mixture is converted to H.sub.2, CO, C.sub.2 H.sub.2, no O.sub.2, with some residual water. Oxygen formerly on the water is transferred to CO.

Abstract: An improved vacuum arc coating apparatus is provided, having a reaction zone with a plasma channel defined within a series of aligned annular substrate holders, or between an outer wall of a chain of substrate holder blocks and the inner wall of the tube. The substrate holders thus act as a liner, confining an arc within the plasma channel. Carrier and plasma creating gases and the reaction species are introduced into the tube, and the deposition process may be carried out at a pressure between 10 Torr and 1000 Torr. Magnetic coils may be used to create a longitudinal magnetic field which focuses the plasma column created by the arc, and to create a transverse magnetic field which is used to bias the plasma column toward the substrates. Substrates can thus be placed anywhere within the reaction zone, and the transverse magnetic field can be used to direct the plasma column toward the substrate, or the tube itself can be rotated to pass the substrate through the plasma column.

Abstract: A method for sequentially depositing a silicon oxide based film as a barrier on a substrate. The film is useful for providing an effective barrier against gas permeability in containers and for extending shelf-life of containers, especially plastic evacuated blood collection devices.

Abstract: A multi-electrode plasma processing system (10) provides flexible plasma processing capabilities for semiconductor device fabrication. The plasma processing equipment (10) includes a gas showerhead assembly (52) a radio-frequency chuck (24), and screen electrode (66). The screen electrode (66) includes base (68) for positioning within process chamber (10) and is made of an insulating material such as a ceramic or teflon. A perforated screen (70) is integral to base (68) and generates a plasma from a plasma-producing gas via a radio-frequency power source (104). The screen (70) has numerous passageways (78) to allow interaction of plasma and the process chamber walls. The screen (70) surrounds showerhead assembly (52) and semiconductor wafer (22) and can influence the entire semiconductor wafer plasma processing environment (62) including the plasma density and uniformity.

Abstract: A plasma reactor and method for forming a dense plasma from a gas is described incorporating a housing, a gas inlet to the housing, a pump for evacuating the housing, a magnetic coil to generate a magnetic field in the housing, a radio frequency power supply, an electrode or induction coil in the housing, a microwave power supply. The invention overcomes the problem of an upper plasma density limit independent of increases in microwave power.

Abstract: An applicator with a surface having a first wetting angle and a first surface area, which surface area has grafted thereto a layer of ion-producing gas plasma having a second wetting angle and a second surface are, wherein the second wetting angle is less than the first wetting angle and the second surface area is greater than the first surface area.

Abstract: A plasma treatment apparatus for forming a thin film on a substrate in a vacuum vessel includes a magnetic field generator which can be positioned inside or outside the vacuum vessel, and a microwave source. The magnetic field strength is controllable such that an electron cyclotron resonance (ECR) area is defined near the substrate. The magnetic field generator can be arranged so that plasma and reactive gas introduction ports are on the microwave introduction side of the ECR area and the substrate is on the opposite side of the ECR area. Alternatively, a gas introduction port can be positioned such that reactive gas is introduced into the ECR area or onto the substrate.

Abstract: Apparatus and methods for plasma processing involving the gettering of particles having a high charge to mass ratio away from a semiconductor wafer are disclosed. In one aspect of the invention, magnets are used to produce a magnetic field which is transverse to an electric field to draw the negative particles away from the wafer to prevent the formation of a sheath which can trap the particles. In a second aspect of the invention, a power source is connected to the wafer electrode to maintain a negative charge on the wafer, thereby preventing negative particles from being drawn to the wafer surface when the plasma is turned off. In other embodiments of the invention, a low density plasma source is used to produce a large plasma sheath which permits particles to cross a chamber to be gettered. A low density plasma discharge followed by a pulse to a higher density is used to overcome the negative effect of an insulating layer between the wafer and the wafer electrode.

Abstract: Hard amorphous hydrogenated carbon, diamond-like films are deposited using an electron cyclotron resonance microwave plasma with a separate radio frequency power bias applied to a substrate stage. The electron cyclotron resonance microwave plasma yields low deposition pressure and creates ion species otherwise unavailable. A magnetic mirror configuration extracts special ion species from a plasma chamber. Different levels of the radio frequency power bias accelerate the ion species of the ECR plasma impinging on a substrate to form different diamond-like films. During the deposition process, a sample stage is maintained at an ambient temperature of less than 100.degree. C. No external heating is applied to the sample stage. The deposition process enables diamond-like films to be deposited on heat-sensitive substrates.

Abstract: A method of forming an oxide film of a high quality 400.degree. C. or below. Ions of an inert gas, whose kinetic energy is 90 or below eV, are applied on the surface of a material of a semiconductor, metal or alloy, and oxygen gas molecules are fed. Thereby, a thin oxide film of the material is formed on the surface of the material.

Abstract: A continuous dry coating method and an apparatus therefor which are capable of removing cut chips and burrs from and smoothing inner walls of small-diameter holes in a substrate material and, then, successively performing a cold coating on these small holes in a short period of time. The continuous dry process coating method comprises the steps of: arranging electrodes on opposite sides of a substrate material; performing a plasma discharge to surface-treat small holes made in the substrate material; and then performing an electron cyclotron resonance plasma (ECR plasma) coating on the surfaces of these holes.

Abstract: A plasma process utilizing an electron cyclotron resonance (ECR) phenomenon caused by generating a magnetic field either parallel or perpendicular to, or both parallel and perpendicular to, a microwave propagation direction, characterized in that an ion beam is made to converge by applying a pulse voltage to a rotating magnetic field, a pulse voltage is applied to deflection plates, and an accelerating pulse voltage is further applied to a plasma.

Abstract: A method and apparatus are disclosed employing electron cyclotron resonant (ECR) heating to produce plasma for applications including but not limited to chemical vapor deposition and etching. A magnetic field is formed by magnets circumferentially arranged about a cylindrical and symmetrical chamber with microwave power injected perpendicularly to a longitudinal axis of the chamber for preventing line-of-sight communication of resulting energetic electrons with a specimen being treated. The microwave power is distributed uniformly around the circumference of the chamber by applicators formed by one or more pairs of annular sectors, each of which comprises a slotted wave guide antenna, and coupled to an external source of microwave power by a hybrid coupler. A magnetic field free region produces uniformity of plasma distribution in a plasma stream approaching the outlet. The above characteristics are maintained for the plasma stream over substantial transverse dimensions larger than the specimen.

Abstract: A plasma treating apparatus is useful for coating substrates with thin films having vapor barrier properties at relatively rapid deposition rates. The apparatus comprises an evacuable chamber, an electrically powered electrode defining a plasma-facing surface within the chamber, and a shield spaced a distance .DELTA. transverse to the plasma-facing surface. During plasma treatments, the plasma is confined to within distance .DELTA. while a substrate is continuously fed through the confined plasma.

Abstract: A method for sequentially depositing a silicon oxide based film as a barrier on a substrate. The film is useful for providing an effective barrier against gas permeability in containers and for extending shelf-life of containers, especially plastic evacuated blood collection devices.

Abstract: Apparatus for delivering heated powder to the plasma gun of the thermal spray plasma system includes a hollow heater tube coupled between a powder feeder and the plasma gun and a power supply coupled between opposite ends of the heater tube. The power supply heats the walls of the heater tube to a temperature below the melting point of the powder particles, to prevent melting and adhesion of the particles thereto. The length of the heater tube is selected to provide an adequate dwell-time of the powder particles therein for a given powder flow rate, so that even relatively large powder particles are heated to a temperature relatively close to that of the heater tube walls upon delivery to the plasma gun. The efficiency of the heater tube is improved by a water cooled reflector tube concentrically disposed about the outside of the heater tube, with oxidation of the tube surfaces being prevented by a flow of inert gas along the space between the heater and reflector rubes.

Abstract: An optical fiber device comprising an optical fiber comprising a core made of an organic crystal and a cladding made of glass, the device generating second harmonics of a laser light that has been launched into the core, the device further comprising a buffer layer on at least one end faces of the optical fiber, and a water barrier layer on the surface of the buffer layer, the buffer layer being such that the organic crystal of the core is not dissolved therein.

Abstract: A plasma CVD method and the device for generating an arc discharging plasma, together with introducing both a material gas and a reactive gas into a vacuum chamber; coating a substrate with a thin film which contains a material gas component and a reactive gas component, said plasma CVD method comprising the steps of: introducing said material gas into a position between the arc discharging plasma and the substrate; and introducing said reactive gas into a space opposite, relative to the arc discharging plasma, to a side whereinto the material gas is introduced.

Abstract: Apparatus and methods for forming a source of dissociated and excited molecules from a working gas-plasma interaction for use in treating substrates such as hydrogen passivation of semiconductors. A plasma is generated under resonant conditions and confined in a reaction chamber by a magnetic mirror trap. The working gas is injected into the reaction chamber to intersect the confined plasma. The interaction forms a neutral species of dissociated and excited molecules and a charged species of ions and electrons. A multipole magnetic field is used to stabilize the plasma and maintain the charged particles of the plasma and the charged species away from the reaction chamber. The charged species is confined to the plasma by the net magnetic field so that the neutral species flows out of the reaction chamber for processing of substrates, e.g., hydrogenation of semiconductor materials.

Abstract: A high dose rate, high impedance plasma ion implantation method and apparatus to apply high voltage pulses to a target cathode within an ionization chamber to both sustain a plasma in the gas surrounding the target, and to implant ions from the plasma into the target during at least a portion of each pulse. Operating at voltages in excess of 50 kV that are too high for the reliable formation of a conventional glow discharge, the plasma is instead sustained through a beam-plasma instability interaction between secondary electrons emitted from the target and a background pulsed plasma. The voltage pulses are at least about 50 kV, and preferably 100 kV or more. Pulse durations are preferably less than 8 microseconds, with a frequency in the 50-1,000 Hz range. The preferred gas pressure range is 1.times.10.sup.-4 -1.times.10.sup.

Abstract: An improved chemical vapor deposition method for the high-rate low-temperature deposition of high-quality thin film material. The method includes the steps of providing an evacuated chamber having a plasma deposition region defined therein; placing a substrate inside the chamber; supplying plasma deposition precursor gases to the deposition region in the evacuated chamber; directing microwave energy from a source thereof to the deposition region, the microwave energy interacting with the deposition precursor gases to form a plasma of electrons, ions and activated electrically neutral species, the plasma including one or more depositing species; increasing the surface mobility of the depositing species in the plasma by coupling additional non-microwave electronic energy and magnetic energy into the plasma, without intentionally adding thermal energy to the substrate or precursor gas; and depositing a thin film of material onto the substrate.

Abstract: A method of preparing a coated substrate is disclosed. The substrate is coated with a plasma generated polymer containing Si, Or C and H in specific atom ratio wherein the polymer also contains certain functional groups, A power density of about 10.sup.6 to about 10.sup.8 J/Kg is employed in the plasma polymerization process.

Abstract: A method for plasma processing characterized by the steps of disposing a wafer proximate to a cathode within a process chamber, releasing a gas into the chamber, applying R.F. power in the VHF/UHF frequency range to the cathode to form a plasma within the chamber, developing a magnetic field within the chamber having flux lines substantially perpendicular to the surface of the wafer, and varying the strength of the magnetic field until a desired cathode sheath voltage is attained. The apparatus includes a chamber, a wafer-supporting cathode disposed within the chamber, a mechanism for introducing gas into the chamber, an R.F.

Abstract: An apparatus for depositing a film at atmospheric pressure and a method used for this formation are offered. Radicals are produced inside a space in which an electric discharge is induced. This space is shrouded in a purge gas to isolate the space from the outside air, for preventing the radicals traveling to the surface of a substrate from being affected by the outside air. A magnetic field and a bias voltage are made to act on the produced plasma, so that the radicals can reach the substrate surface with greater ease. The arriving radicals promote the formation of the film on the surface of the substrate.

Abstract: An object which is to be implemented with ions is enclosed in a container. A plasma is generated in a chamber which is separate from, and opens into the container. The plasma diffuses from the chamber into the container to surround the object with uniform density. High voltage negative pulses are applied to the object, causing the ions to be accelerated from the plasma toward, and be implanted into, the object. Line-of-sight communication between a plasma generation source located in the chamber and the object is blocked, thereby eliminating undesirable effects including heating of the object by the source and transfer of thermally discharged material from the source to the object. Two or more chambers may be provided for generating independent plasmas of different ion species which diffuse into and uniformly mix in the container. The attributes of the different plasmas may be individually selected and controlled in the respective chambers.

Abstract: A method of manufacturing a hot-cathode element which consists of a rare-earth-oxide-doped refractory metal, notably thoriated tungsten, and which also contains carbon components, first a plurality of layers of the hot-cathode element being successively deposited on a substrate member (2) by means of a CVD process, after which notably the hot-cathode element is separated from the substrate member (2). The strength required for further working of the hot-cathode element is improved in that in the course of the CVD process decarburizing intermediate treatments are performed, the hot-cathode element being carburized during an aftertreatment.

Abstract: Interlevel gaps between closely spaced circuit elements, such as closely spaced metal interconnect lines, are filed using a biased electron cyclotron resonance (ECR) deposition process. The gaps between circuit elements may be separated by distances of less than 0.6 microns and the gaps can have aspect rations in excess of 2.0. To fill such gaps between the circuit elements on a semiconductor wafer, the wafer is mounted in an ECR reaction chamber. A continuing flow of oxygen (O.sub.2) and silane (SiH.sub.4) gas is introduced into the ECR system's plasma and reaction chambers, respectively, while applying a microwave excitation so as to generate a plasma. High deposition rates and low film stress are achieved by controlling the flow of oxygen and silane so as to maintain an oxygen to silane gas flow ratio of less than 1.5.

Abstract: A method of forming a boron nitride containing film on a substrate is disclosed. The method includes disposing a substrate in a reaction chamber, inputting a reactive gas comprising boron and nitrogen into the reaction chamber, exciting the reactive gas in the reaction chamber by applying a DC biased, RF electric field thereto in the presence of a magnetic field, and depositing the boron nitride containing film on the substrate.

Abstract: Disclosed is a method for the production of diamond films, which comprise introducing a diamond-forming gas into a reaction chamber in which a substrate is located, activating the gas in the reaction chamber and depositing diamond on the substrate by decomposition of the gas, wherein the diamond-forming gas is a gas or gas mixture containing hydrogen, oxygen and carbon atoms at an atomic ratio satisfying requirements represented by the following formulae:2.gtoreq.C/H.gtoreq.0.0005, and4.gtoreq.O/C.gtoreq.0.0005.

Abstract: A plasma processing deposition method for forming a material on a substrate is disclosed. The method includes inputting a reactive gas into a reaction chamber, admitting a microwave into the reaction chamber at a predetermined frequency and in a predetermined direction, establishing a magnetic field in the reaction chamber where the direction of the magnetic field is substantially parallel to the direction of the propagation of the microwave and the strength of the magnetic field causes cyclotron resonance at approximately the position where the substrate is held in the reaction chamber, exhausting the reaction chamber to establish a predetermined pressure within the chamber and depositing the material on a surface of the substrate. This method may further include holding the substrate approximately at the predetermined cyclotron resonance position within the reaction chamber in order to readily deposit the material on the surface of the substrate.

Abstract: A plasma-generating apparatus has a plasma discharge chamber having a plasma-generation region. Microwave energy is applied, while introducing plasma-forming gas, and a magnetic field is applied to the plasma-generation region by an electromagnetic coil extending around the chamber. To enhance the field in the plasma-generation region while reducing it outside said region, and a permanent magnet arrangement is at least partly located radially within the coil so as to provide a unidirectional magnetic field which extends through the whole of the plasma-generation region as seen in radial cross-section and is oriented in the axial direction of the coil.

Abstract: A method and apparatus for controlling plasma generated utilizing microwaves and a magnetic field. Microwaves including right and left circularly polarized waves are generated and introduced into a processing chamber and a ratio of the right circularly polarized waves to the left circularly polarized waves is controlled to enable control of at least one of an electron temperature and a density distribution for plasma processing.

Abstract: A method for producing a semiconductor device includes the steps of forming a patterned wiring line on a first insulating layer, and depositing a second insulating layer on the patterned wiring line and the first insulating layer by a plasma-assisted CVD process in which a pulse-modulated plasma is generated and a gas containing hydrogen is used.

Abstract: Diamond films or I-Carbon films can be formed on a surface of an object by virtue of plasma-assisted chemical vapor deposition. The hardness of the films can be enhanced by applying a bias voltage to the object during deposition.

Abstract: In a plasma processing method and a plasma processing apparatus, plasma is processed by floating a focus ring by the repulsion between a magnet mounted in the focus ring and another electromagnet and adjusting the height of the focus ring to an optimal height by the current flowing to the electromagnet. Therefore, it is possible to set an optimal height of the focus ring for each layer in the laminated film etching, to enhance the uniformity of the laminated film etching, and to achieve a precise etching.

Abstract: Transparent, refractory coatings and methods for their application to environmentally exposed substrates are disclosed. The coatings can be deposited over organic decorative materials, which generally prevent application of hard, protective, inorganic materials due to emission of exudates and vulnerability to excessive heat. The coatings are applied using plasma-enhanced chemical-vapor deposition techniques that reduce reaction temperatures and produce multilayer structures that seal organic exudates before a final layer of coating is applied, such multilayer protective coating structures being particularly suitable for protecting automobile bodies and the like against degrading external forces.

Abstract: A plasma processing apparatus and method is equipped with a vacuum chamber, helmoltz coils, Ioffe bars, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the center position of the vacuum chamber. Specifically, the method includes establishing a first magnetic field in the vacuum chamber substantially parallel to the direction of propagation of microwaves emitted in the chamber and establishing a second magnetic field substantially perpendicular to the first magnetic field. A substrate in the chamber for plasma processing is placed so that a surface of the substrate is substantially perpendicular to the direction of the first magnetic field and parallel to the direction of the second.

Abstract: The substrate in a plasma jet deposition system is provided with structural attributes, such as apertures and/or grooves, that facilitate efficient deposition. Groups of substrates are arranged with respect to the plasma beam in a manner which also facilitates efficient deposition. In addition to increasing the portion of the plasma beam volume which contacts the substrate surface or surfaces, it is advantageous to provide for the efficient evacuation of spent fluids away from the substrate so that fresh plasma containing the operative species can easily and continuously contact the substrate surface.

Abstract: A method is disclosed employing electron cyclotron resonant (ECR) heating to produce plasma for applications including but not limited to chemical vapor deposition and etching. A magnetic field is formed by magnets circumferentially arranged about a cylindrical and symmetrical chamber with microwave power injected perpendicularly to a longitudinal axis of the chamber for preventing line-of-sight communication of resulting energetic electrons through an outlet at one axial end of the chamber. The circumferential magnets in the symmetrical chamber cause precessing of the electrons resulting in greatly increased plasma density and ion flux or current density even at low gas pressures which are preferably maintained for establishing unidirectionality or anisotropic plasma characteristics.

Abstract: A process for forming a high quality polycrystalline semiconductor film on an insulating substrate which comprises using a MW-PCVD apparatus comprising a plasma generation chamber provided with a microwave introducing means and a film-forming chamber connected through a grid electrode to said plasma generation chamber, said film-forming chamber containing said insulating substrate positioned on a substrate holder made of a conductive material being installed therein, producing plasma by contacting a film-forming raw material gas with a microwave energy applied through said microwave introducing means in said plasma generation chamber and introducing said plasma into said film-forming chamber while applying a high frequency voltage with a frequency in the range of from 20 to 500 MHz between said grid electrode and said substrate holder to thereby cause the formation of said polycrystalline semiconductor film on said insulating substrate maintained at a desired temperature.

Abstract: A method for the production of a thin film on an end surface of a fiber made up of a core of an organic material, and a clad made of glass. This method involves the steps of placing the fiber in a vacuum chamber, reducing the pressure in the chamber, cutting the fiber under reduced pressure, and either simultaneously, or immediately after cutting the fiber, forming a thin film on the cut surface of the fiber.

Abstract: Diamond films can be formed on a surface by virtue of a microwave energy. A catalyst gas is introduced into a reaction chamber for ECR CVD, along with a carbon compound gas. The catalyst gas consists of a gaseous compound of nickel, germanium and/or manganese such as NiH.sub.2 NiF, NiO, NiF(H.sub.2 O)n (where n=1.3), Ni(CN).sub.2, Ni(C.sub.5 H.sub.5).sub.2, GeH.sub.4, GeF.sub.4, manganese carboxyl, MnF.sub.2 and so forth.

Abstract: Embodiments of magnetoplasmadynamic processors are disclosed which utilize specially designed cathode-buffer, anodeionizer and vacuum-insulator/isolator structures to transform a working fluid into a beam of fully ionized plasma. The beam is controlled both in its size and direction by a series of magnets which are mounted in surrounding relation to the cathode, anode, vacuum insulator/isolators and plasma beam path. As disclosed, the processor may be utilized in many diverse applications including the separation of ions of differing weights and/or ionization potentials and the deposition of any ionizable pure material. Several other applications of the processor are disclosed.