Abstract: Introduced here is a plasma polymerization apparatus. Example embodiments include a reaction chamber in a shape substantially symmetrical to a central axis. Some examples further include a rotation rack in the reaction chamber. The rotation rack may be operable to rotate relative to the reaction chamber about the central axis of the reaction chamber. Examples may further include reactive species discharge mechanisms positioned around a perimeter of the reaction chamber and configured to disperse reactive species into the reaction chamber in a substantially symmetrical manner from the outer perimeter of the reaction chamber toward the central axis of the reaction chamber, such that the reactive species form a polymeric coating on surfaces of the one or more substrates during said dispersion of the reactive species, and a collecting tube positioned along the central axis of the reaction chamber and having an air pressure lower than the reaction chamber.

Abstract: Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800° C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H3PO4, showing good etch selectivity.

Abstract: Si-containing film forming compositions comprising Si—C free and volatile silazane-containing precursors are disclosed. The compositions may be used to deposit high purity thin films. The Si—C free and volatile silazane-containing precursors have the formulae: [(SiR3)2NSiH2]m—NH2-m—C?N, with m=1 or 2;??(a) [(SiR3)2NSiH2]n—NL3-n,with n=2 or 3;??(b) (SiH3)2NSiH2—O—SiH2N(SiH3)2; and??(c) (SiR?3)2N—SiH2—N(SiR?3)2;??(d) with each R independently selected from H, a dialkylamino group, or an amidinate; each R? independently selected from H, a dialkylamino group, or an amidinate, with the provision that all R? are not H; and L is selected from H or a C1-C6 hydrocarbyl group.

Abstract: Embodiments of the present disclosure generally provide apparatus and methods for supporting a gas distribution showerhead in a processing chamber. In one embodiment, a gas distribution showerhead for a vacuum chamber includes a rectangular body having four sides, a first major surface and a second major surface opposite the first major surface, and a plurality of gas passages formed through the body in a longitudinal direction between the first and second major surfaces, a center support member coupled to the body in a center region thereof, and a mid-support member coupled to the body between the center region and the side.

Abstract: A manufacturing method of a semiconductor device in which the threshold voltage is adjusted is provided. The semiconductor device includes a first semiconductor, an electrode electrically connected to the first semiconductor, a gate electrode, and an electron trap layer between the gate electrode and the first semiconductor. By performing heat treatment at higher than or equal to 125° C. and lower than or equal to 450° C. and, at the same time, keeping a potential of the gate electrode higher than a potential of the electrode for 1 second or more, the threshold voltage is increased.

Abstract: A flexible display device includes: a display substrate which is divided into a first region corresponding to a within-cell region of an integrated devices sheet from which the flexible display device is cut and into a second region corresponding to an outside-the-cell region of the integrated devices sheet, where within the first region there is provided a display unit including a light emitting element layer; a patterned inorganic film layer formed to be substantially continuously present within the first region of the display substrate and to be not present or not substantially continuously present within the second region of the display substrate; and a thin film encapsulation layer formed on the inorganic film layer to encapsulate the substantially continuously present portion of the inorganic film layer that is within the first region and the display unit, wherein an outer boundary of the thin film encapsulation layer is located more inwardly and toward an outer boundary of the display unit than is an o

Abstract: Embodiments of the present invention provide a film stack and method for depositing an adhesive layer for a low dielectric constant bulk layer without the need for an initiation layer. A film stack for use in a semiconductor device comprises of a dual layer low-K dielectric deposited directly on an underlying layer. The dual low-K dielectric consists of an adhesive layer deposited without a carbon free initiation layer.

Abstract: Smooth silicon films having low compressive stress and smooth tensile silicon films are deposited by plasma enhanced chemical vapor deposition (PECVD) using a process gas comprising a silicon-containing precursor (e.g., silane), argon, and a second gas, such as helium, hydrogen, or a combination of helium and hydrogen. Doped smooth silicon films and smooth silicon germanium films can be obtained by adding a source of dopant or a germanium-containing precursor to the process gas. In some embodiments dual frequency plasma comprising high frequency (HF) and low frequency (LF) components is used during deposition, resulting in improved film roughness. The films are characterized by roughness (Ra) of less than about 7 ?, such as less than about 5 ? as measured by atomic force microscopy (AFM), and a compressive stress of less than about 500 MPa in absolute value. In some embodiments smooth tensile silicon films are obtained.

Abstract: Methods of forming a film stack may include the plasma accelerated deposition of a silicon nitride film formed from the reaction of nitrogen containing precursor with silicon containing precursor, the plasma accelerated substantial elimination of silicon containing precursor from the processing chamber, the plasma accelerated deposition of a silicon oxide film atop the silicon nitride film formed from the reaction of silicon containing precursor with oxidant, and the plasma accelerated substantial elimination of oxidant from the processing chamber. Process station apparatuses for forming a film stack of silicon nitride and silicon oxide films may include a processing chamber, one or more gas delivery lines, one or more RF generators, and a system controller having machine-readable media with instructions for operating the one or more gas delivery lines, and the one or more RF generators.

Abstract: A method of depositing a thin film includes: repeating a first gas supply cycle a first plurality of times, the first gas supply cycle including supplying a source gas to a reaction space; supplying first plasma while supplying a reactant gas to the reaction space; repeating a second gas supply cycle a second plurality of times, the second gas supply cycle including supplying the source gas to the reaction space; and supplying second plasma while supplying the reactant gas to the reaction space, wherein the supplying of the first plasma includes supplying remote plasma, and the supplying of the second plasma includes supplying direct plasma.

Abstract: A gas-barrier multilayer film including: a base member; and at least one thin film layer formed on at least one surface of the base member, wherein at least one layer of the thin film layer(s) satisfies at least one of requirements (A) and (B).

Abstract: A process for producing a multilayer film which, even when bent, is less apt to decrease in barrier property or electrical conductivity. The process comprises forming a barrier film and a transparent conductive film on a resin film to produce a multilayer film. The barrier film is formed by a plasma enhanced CVD method which uses electric discharge between rolls. The transparent conductive film is preferably formed by physical vapor deposition. The resin film preferably is a polyester resin film or a polyolefin resin film.

Abstract: Cobalt-containing films, as well as methods for providing the cobalt-containing films. Certain methods pertain to exposing a substrate surface to a precursor and a co-reactant to provide a cobalt-containing film, the first precursor having a structure represented by: wherein each R is independently C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics, L is a coordinating ligand comprising a Lewis base.

Abstract: Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I: XmR1nHpSi(NR2R3)4-m-n-p??I wherein X is selected from Cl, Br, I; R1 is selected from linear or branched C1-C10 alkyl group, a C2-C12 alkenyl group, a C2-C12 alkynyl group, a C4-C10 cyclic alkyl, and a C6-C10 aryl group; R2 is selected from a linear or branched C1-C10 alkyl, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; R3 is selected from a branched C3-C10 alkyl group, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein R2 and R3 are linked or not linked to form a ring.

Abstract: A process for producing a multilayer film which, even when bent, is less apt to decrease in barrier property or electrical conductivity. The process comprises forming a barrier film and a transparent conductive film on a resin film to produce a multilayer film. The barrier film is formed by a plasma enhanced CVD method which uses electric discharge between rolls. The transparent conductive film is preferably formed by physical vapor deposition. The resin film preferably is a polyester resin film or a polyolefin resin film.

Abstract: A flexible composite comprising a plastic foil, having an upper and a lower surface, and at least one dielectric barrier layer against gases and liquids which is applied directly to at least one of the surfaces by plasma-enhanced thermal vapor deposition and comprises an inorganic vapor-depositable material, is provided. The flexible composite can be used for constructing flexible circuits or displays and has a high barrier effect with regard to oxygen and/or water vapor.

Abstract: A method for preparing a low dielectric constant (low k) material and a film thereof is provided. The method includes the following steps. A substrate is first put into a plasma generating reaction system, and a carrier gas carrying a carbon and fluorine containing silicon dioxide precursor is then introduced into the plasma generating reaction system, so that the carbon and fluorine containing silicon dioxide precursor is formed on the substrate. After that, the carbon and fluorine containing silicon dioxide precursor is converted to a low k material film through heating; meanwhile, a stress of the low k material film is eliminated such that the film has a more compact structure. By means of these steps the carbon and fluorine containing silicon dioxide precursor is still capable of forming a low k material film of silicon dioxide containing a large amount of fluorocarbon, even under various different atmospheres.

Abstract: A method for forming a dielectric film on a substrate by plasma-assisted deposition, includes: introducing a Si-containing process gas to a reaction space wherein a substrate having a surface with patterned recesses is placed; and applying RF power to the process gas in the reaction space to form a dielectric film on the surface by plasma reaction. The RF power is comprised of pulses of high-frequency RF power and pulses of low-frequency RF power, which overlap and are synchronized.

Abstract: A process for forming a silicon carbonitride barrier dielectric film between a dielectric film and a metal interconnect of an integrated circuit substrate, comprising the steps of; providing the integrated circuit substrate having a dielectric film; contacting the substrate with a barrier dielectric film precursor comprising: RxR?y(NR?R??)zSi wherein R, R?, R? and R?? are each individually selected from hydrogen, linear or branched saturated or unsaturated alkyl, or aromatic; wherein x÷y+z=4; z=1-3; but R, R? cannot both be hydrogen; forming the silicon carbonitride barrier dielectric film with C/Si ratio >0.8 and a N/Si ratio >0.2 on the integrated circuit substrate.

Abstract: A method of processing a substrate in a processing chamber is provided. The method generally includes applying a microwave power to an antenna coupled to a microwave source disposed within the processing chamber, wherein the microwave source is disposed relatively above a gas feeding source configured to provide a gas distribution coverage covering substantially an entire surface of the substrate, and exposing the substrate to a microwave plasma generated from a processing gas provided by the gas feeding source to deposit a silicon-containing layer on the substrate at a temperature lower than about 200 degrees Celsius, the microwave plasma using a microwave power having a power density of about 500 milliWatts/cm2 to about 5,000 milliWatts/cm2 at a frequency of about 1 GHz to about 10 GHz.

Abstract: Disclosed herein is a method for producing a plastic container coated with a thin film that is excellent in gas barrier properties, film coloration and film adhesiveness without using an external electrode having a special shape while suppressing deposition of foreign matters such as carbon powders.

Abstract: A method of bonding an adherent to a substrate, wherein a primer is applied to the substrate by plasma deposition and the adherent is bonded to the primer treated surface of the substrate, and the primer contains functional groups which chemically bond to functional groups in the adherent.

Abstract: Membranes of the invention comprise a hybrid silica film on a organic polymer support. The silica comprises organic bridging groups bound to two or more silicon atoms, in particular at least 1 of said organic bridging groups per 10 silicon atoms. The membranes can be produced by dry chemistry processes, in particular plasma-enhanced vapour deposition of bridged silane precursors, or by wet chemistry involving hydrolysis of the bridged silane precursors. The membranes are inexpensive and efficient for separation of small molecules and filtration processes.

Abstract: A method for coating a substrate surface such as a syringe part by PECVD is provided, the method comprising generating a plasma from a gaseous reactant comprising an organosilicon precursor and optionally an oxidizing gas by providing plasma-forming energy adjacent to the substrate, thus forming a coating on the substrate surface by plasma enhanced chemical vapor deposition (PECVD). The plasma-forming energy is applied in a first phase as a first pulse at a first energy level followed by further treatment in a second phase at a second energy level lower than the first energy level. The lubricity, hydrophobicity and/or barrier properties of the coating are set by setting the ratio of the O2 to the organosilicon precursor in the gaseous reactant, and/or by setting the electric power used for generating the plasma.

Abstract: A gas barrier laminate comprising a substrate having thereon at least a gas barrier layer and a polymer layer, wherein at least one polymer layer is provided adjacent to at least one gas barrier layer; and an average carbon content of the polymer layer at a contact interface between the gas barrier layer is lower than an average carbon content in the polymer layer.

Abstract: The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention provides novel linear and two dimensional plasma sources that produce linear and two dimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapor deposition. The present invention also provides methods of making thin film coatings and methods of increasing the coating efficiencies of such methods.

Abstract: Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. At least one of the gas passages has a right cylindrical shape for a portion of its length extending from the upstream side and a coaxial conical shape for the remainder length of the diffuser plate, the upstream end of the conical portion having substantially the same diameter as the right cylindrical portion and the downstream end of the conical portion having a larger diameter. The gas distribution plate is relatively easy to manufacture and provides good chamber cleaning rate, good thin film deposition uniformity and good thin film deposition rate.

Abstract: A method of forming a porous insulation film uses an organic silica material gas having a 3-membered SiO cyclic structure and a 4-membered SiO cyclic structure, or an organic silica material gas having a 3-membered SiO cyclic structure and a straight-chain organic silica structure, and uses a plasma reaction in the filming process. A porous interlevel dielectric film having a higher strength and a higher adhesive property can be obtained.

Abstract: The present invention relates to a novel process for the remote plasma surface treatment of substrate particles at atmospheric pressure. The invention is motivated by the urge to overcome major drawbacks of particle treatment in low pressure plasmas and in-situ particle treatment at atmospheric pressure. The former requires complex and mostly expensive vacuum installations and vacuum locks usually prohibiting continuous processing. Independent of the system pressure, in-situ plasma treatment causes particle charging and therefore undesirable interaction with the electric field of the discharge, which is seen to contribute to the process of reactor clogging. Additionally, the filamentary discharges modes of atmospheric pressure plasmas are inflicted with inhomogeneous surface treatment. Furthermore, short radical lifetimes at elevated pressures complicate a remote plasma treatment approach as widely used in low pressure applications.

Abstract: A method of forming an insulation film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: (i) adsorbing a non-excited non-halide precursor having four or more silicon atoms in its molecule onto a substrate placed in a reaction space; (ii) supplying an oxygen-free reactant to the reaction space without applying RF power so as to expose the precursor-adsorbed substrate to the reactant; and (iii) after step (ii), applying RF power to the reaction space while the oxygen-free reactant is supplied in the reaction space; and (iv) repeating steps (i) to (iii) as a cycle, thereby depositing an insulation film on the substrate.

Abstract: Methods of creating porous materials, such as silicon, are described. In some embodiments, plasma sheath modification is used to create ion beams of various incidence angles. These ion beams may, in some cases, form a focused ion beam. The wide range of incidence angles allows the material to be deposited amorphously. The porosity and pore size can be varied by changing various process parameters. In other embodiments, porous oxides can be created by adding oxygen to previously created layers of porous material.

Abstract: The present invention provides a method for removing metal and/or metal oxide contamination from the interior of a vacuum coating reactor, the method comprising the steps of: a) performing an idle coating step by depositing a coating layer, wherein the coating layer comprises silicon; b) at least partly removing the deposited coating layer. The method according to the invention is particularly suitable for cleaning reactors in the context of solar cell manufacturing. The method is time saving and cost saving.

Abstract: Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.

Abstract: The disclosed invention includes apparatus and methods that may be used for plasma-based deposition of thin layers of material on separate or continuous web substrates at very low temperatures with very low defect density. It achieves superior control of gas phase chemistry by controlling the sequence of introduction of gaseous components. It also has substantially independent control over the rate of chemical processes in the gas and of the amount of power and energy of ion bombardment. Such control enables high quality single and multi-layer films to be deposited cost effectively and uniformly over larger areas under very low temperature conditions.

Abstract: The present invention relates to a method for applying a coating to a substrate using cold plasma, wherein particles provided with a polymer coating are fed into a cold plasma at less than 3,000 K and the particles activated by this are deposited on a substrate. The present invention furthermore relates to a substrate coating which can be obtained by the methods according to the invention. The present invention furthermore relates to the use of platelet-shaped particles with a polymer coating with an average thickness of less than 2 ?m in the coating of a substrate using a cold plasma.

Abstract: A transparent gas barrier film comprising a substrate having thereon a gas barrier layer comprising at least a low density layer and a high density layer, wherein one or more intermediate density layers are sandwiched between the low density layer and the high density layer.

Abstract: Described herein are alkoxysilylamine precursors having the following Formulae A and B: wherein R1 and R4 are independently selected from a linear or branched C1 to C10 alkyl group, a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group and wherein R2, R3, R4, R5, and R6 are independently selected from the group consisting of hydrogen, a linear or branched C1 to C10 alkyl group, a C2 to C12 alkenyl group, a C2 to C12 alkynyl group, a C4 to C10 cyclic alkyl, a C6 to C10 aryl group, and a linear or branched C1 to C10 alkoxy group. Also described herein are deposition processes using at least one precursor have Formulae A and/or B described herein.

Abstract: Methods for depositing film stacks by plasma enhanced chemical vapor deposition are described. In one example, a method for depositing a film stack on a substrate, wherein the film stack includes films of different compositions and the deposition is performed in a process station in-situ, is provided. The method includes, in a first plasma-activated film deposition phase, depositing a first layer of film having a first film composition on the substrate; in a second plasma-activated deposition phase, depositing a second layer of film having a second film composition on the first layer of film; and sustaining the plasma while transitioning a composition of the plasma from the first plasma-activated film deposition phase to the second plasma-activated film deposition phase.

Abstract: Methods and hardware for depositing ultra-smooth silicon-containing films and film stacks are described. In one example, an embodiment of a method for forming a silicon-containing film on a substrate in a plasma-enhanced chemical vapor deposition apparatus is disclosed, the method including supplying a silicon-containing reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a co-reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a capacitively-coupled plasma to a process station of the plasma-enhanced chemical vapor deposition apparatus, the plasma including silicon radicals generated from the silicon-containing reactant and co-reactant radicals generated from the co-reactant; and depositing the silicon-containing film on the substrate, the silicon-containing film having a refractive index of between 1.4 and 2.1, the silicon-containing film further having an absolute roughness of less than or equal to 4.5 ? as measured on a silicon substrate.

Abstract: A coated metallic part includes a substrate including a metallic surface; a first coating layer supported on the metallic surface and including a first polymer, the first polymer including silicon; and a second coating layer including a second polymer different from the first polymer, the first coating layer being positioned between the metallic surface and the first coating layer. The first coating layer may have a silicon atomic percentage of 5 to 50 atomic weight percent. The first polymer of the first coating layer may have an oxygen-to-silicon ratio of 1.0 to 4.0. The second polymer of the second polymer layer may include at least one of an acrylic polymer, a polyester, an alkyd, a polyurethane, a polyamide, a polyether, a copolymer thereof, and a mixture thereof.

Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.

Abstract: The present invention relates to tubular elements, such as fuel assembly tubes, which are designed to be used in high pressure and high temperature water in nuclear reactors, such as pressurized water nuclear reactors. In particular, the present invention relates to a method of improving wear resistance and corrosion resistance by depositing a protective coating having a depth of from about 5 to about 25 ?m on the surface of the tubular elements. The coating is provided by nitriding the tubular element at a temperature of from about 400° C. to about 440° C. The nitridation of the tubular element can be carried out for a duration of from about 12 hours to about 40 hours.

Abstract: The invention includes the structure of a multilayer protective coating, which may have, among other properties, scratch resistance, UV absorption, and an effective refractive index matched to a polymer substrate such as polycarbonate. Each layer may contain multiple components consisting of organic and inorganic materials. The multilayer protective coating includes interleaved organic layers and inorganic layers. The organic layers may have 20% or more organic compounds such as SiOxCyHz. The inorganic layers may have 80% or more inorganic materials, such as SiO2, SiOxNy, and ZnO, or mixtures thereof. Each layer of the multilayer protective coating is a micro layer and may have a thickness of 5 angstroms or less in various embodiments. The multilayer protective coating may contain in the order of hundreds or thousands of micro layers, depending upon the design requirement of applications. In each micro layer, the components may have substantially continuous variations in concentration.

Abstract: The use of a methylated amorphous silicon alloy as the active material in an anode of Li-ion battery is described. Lithium storage batteries and anodes manufactured using the material, as well as a method for manufacturing the electrodes by low-power PECVD are also described.

Abstract: A method for manufacturing a poly- or microcrystalline silicon layer on an insulator comprises a silicon containing insulator, growing a thin adhesion promoting layer comprising amorphous silicon onto it and further growing a poly- or microcrystalline silicon layer onto the adhesion promoting layer. Such a sequence of layers, deposited with a PECVD method, shows good adhesion of the poly- or microcrystalline silicon on the base and is advantageous in the production of semiconductors, such as thin film transistors.

Abstract: Methods are provided for vapor deposition coating of hydrophobic materials and applications thereof. The method for making a hydrophobic material includes providing a natural mineral, providing a silicone-based material, heating the silicone-based material to release vaporous molecules of the silicone-based material, and depositing the vaporous molecules of the silicone-based material to form a layer of the silicone-based material on surfaces of the natural mineral.

Abstract: Methods of making components having calcium magnesium aluminosilicate (CMAS) mitigation capability involving providing a component; applying an environmental barrier coating to the component, the environmental barrier coating having a separate CMAS mitigation layer including a CMAS mitigation composition selected from rare earth elements, rare earth oxides, zirconia, hafnia partially or fully stabilized with alkaline earth or rare earth elements, zirconia partially or fully stabilized with alkaline earth or rare earth elements, magnesium oxide, cordierite, aluminum phosphate, magnesium silicate, and combinations thereof.

Abstract: To provide a method for producing a laminate excellent in weather resistance, gas barrier property and long-term stability of adhesion between layers. A method for producing a laminate comprising a substrate sheet containing a fluororesin and a gas barrier film directly laminated on at least one side of the substrate sheet, wherein the gas barrier film contains as the main component an inorganic compound comprising at least one member selected from the group consisting of oxygen, nitrogen and carbon, and silicon or aluminum, and the gas barrier film is formed on the substrate sheet by a high-frequency plasma chemical vapor deposition method at a frequency of 27.12 MHz.

Abstract: A transparent gas barrier film comprising a substrate having thereon a gas barrier layer comprising at least a low density layer and a high density layer, wherein one or more intermediate density layers are sandwiched between the low density layer and the high density layer.

Abstract: The invention relates to a method and apparatus for the application of a thin film coating of material onto a surface of an article which is to be exposed to aqueous conditions such as when in the sea or rivers. The invention allows for the formation of a coating which is resistant to fouling and which coating can be formed of materials which have significantly less adverse effect on the quality of the water in which the article is placed in comparison to conventional coating types.