Abstract: Novel, developer-soluble anti-reflective coating compositions and methods of using those compositions are provided. The compositions comprise a multi-functional acid reacted with a multi-functional vinyl ether to form a branched polymer or oligomer. In use, the compositions are applied to a substrate and thermally crosslinked. Upon exposure to light and post-exposure baking, the cured polymers/oligomers will decrosslink and depolymerize, rendering the layer soluble in typical photoresist developing solutions (e.g., alkaline developers).

Abstract: To provide a material including: a silicon-containing polymer having at least an alkali-soluble group and is represented by the following general formula (1); and an organic solvent capable of dissolving the silicon-containing polymer. (SiO4/2)a(R1tSiO(4-t)/2)b(O1/2R2)c??general formula (1) where R1 represents at least one of a monovalent organic group, hydrogen atom and hydroxyl group, R2 represents at least one of a monovalent organic group and hydrogen atom (where R1 and R2 each may appear twice or more, and at least one of R1 and R2 contains an alkali-soluble group), “t” represents an integer of 1 to 3, “a,” “b,” and “c” represent the relative proportions of their units (where a?0, b?0 and c?0, and “a,” “b,” and “c” are not 0 at the same time), and (R1tSiO(4-t)/2)b may appear twice or more.

Abstract: Novel, developer-soluble, hard mask compositions and methods of using those compositions to form microelectronic structures are provided. The composition comprises the compound a compound for controlling development rate, and a crosslinking agent in a solvent system. The methods involve applying the composition to a substrate and curing the composition. An imaging layer is applied to the composition, followed by light exposure and developing, during which the light-exposed portions of the imaging layer are removed, along with portions of the hard mask composition adjacent said light-exposed portions. The size of the hard mask composition structures are controlled by the development rate, and they yield feature sizes that are a fraction of the imaging layer feature sizes, to give a pattern that can ultimately be transferred to the substrate.

Abstract: There is provided an underlayer coating for lithography that is used in lithography process of the manufacture of semiconductor devices, that can be used as a hardmask, and that causes no intermixing with photoresists; and a composition for forming the underlayer coating. The composition comprises a polysilane compound, a crosslinkable compound, a crosslinking catalyst and a solvent. The polysilane compound is preferably a polysilane compound having a bond between silicons at the main chain.

Abstract: A coating process comprises forming a patterned material layer on a substrate using a self-segregating polymeric composition comprising a polymeric photoresistive material and an antireflective coating material. The polymeric photoresistive material and the antireflective coating material that make up the self segregating composition are contained in a single solution. When depositing this solution on a substrate and removing the solvent, the two materials self-segregate into two layers. The substrate can comprise one of a ceramic, dielectric, metal, or semiconductor material and in some instances a material such as a BARC material that is not from the self segregating composition. The composition may also contain a radiation-sensitive acid generator and a base quencher. This produces a coated substrate having a uniaxial bilayer coating oriented in a direction orthogonal to the substrate with a top photoresistive coating layer and a bottom antireflective coating layer.

Abstract: A coating process comprises forming a patterned material layer on a substrate using a self-segregating polymeric composition comprising a polymeric photoresistive material and an antireflective coating material contained in a single solution. When depositing this solution on a substrate and removing the solvent, the two materials self-segregate into two layers. This produces a coated substrate having a uniaxial bilayer coating oriented in a direction orthogonal to the substrate with a top photoresistive coating layer and a bottom antireflective coating layer. Pattern-wise exposing the coated substrate to imaging radiation and contacting the coated substrate with a developer, produces the patterned material layer. Any optional top coat material and a portion of the photoresist layer can be simultaneously removed from the coated substrate to form a patterned photoresist layer on the substrate.

Abstract: There is provided an underlayer coating that is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to the photoresists depending on the type of etching gas, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition for forming the underlayer coating. The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, includes a polymerizable compound containing 5 to 45% by mass of silicon atom (A), a photopolymerization initiator (B), and a solvent (C).

Abstract: A near-infrared absorptive layer is formed from a composition comprising (A) an acenaphthylene polymer, (B) a near-infrared absorbing dye, and (C) a solvent. When a multilayer film comprising the near-infrared absorptive layer and a photoresist layer is used in optical lithography, the detection accuracy of optical auto-focusing is improved, allowing the optical lithography to produce a definite projection image with an improved contrast and succeeding in forming a better photoresist pattern.

Abstract: A topcoat material for application on top of a photoresist material is disclosed. The topcoat material comprises an acid-inert compound. The topcoat material also comprises a polymer or an oligomer or a cage structure which shows negligible intermixing with the imaging layer and is soluble in aqueous base developer. A method of forming a patterned material layer on a substrate and a coated substrate comprising the topcoat material is also disclosed.

Abstract: There is disclosed a thermosetting metal oxide-containing film-forming composition for forming a metal oxide-containing film to be formed in a multilayer resist process used in lithography, the thermosetting metal oxide-containing film-forming composition comprising, at least: (A) a metal oxide-containing compound obtained by hydrolytic condensation of a hydrolyzable silicon compound and a hydrolyzable metal compound; (B) a thermal crosslinking accelerator; (C) a monovalent, divalent, or higher organic acid having 1 to 30 carbon atoms; (D) a trivalent or higher alcohol; and (E) an organic solvent.

Abstract: A non-ablative negative-working imageable element has first and second polymeric layers under a crosslinked silicone rubber layer. These elements can be used in a simple method to provide lithographic printing plates useful for waterless printing (no fountain solution). Processing after imaging is relatively simple using either water or an aqueous solution containing very little organic solvent to remove the imaged regions. The crosslinked silicone rubber layer is ink-repelling and only the first layer that is closest to the substrate contains an infrared radiation absorbing compound to provide thermal sensitivity.

Abstract: A metal oxide-containing film is formed from a heat curable composition comprising (A) a metal oxide-containing compound obtained through hydrolytic condensation between a hydrolyzable silicon compound and a hydrolyzable metal compound, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Cs, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The metal oxide-containing film ensures effective pattern formation.

Abstract: The present invention relates to a composition comprising: (a) a polymer having at least one repeating unit of formula where R1 is a non-hydrolysable group and n is an integer ranging from 1 to 3; and (b) a crosslinking catalyst. The composition is useful in forming low k dielectric constant materials and as well as hard mask and underlayer materials with anti-reflective properties for the photolithography industry.

Abstract: A polymer which has siloxane group at a main chain thereof and a composition including the same, for forming an organic anti-reflective coating layer are disclosed. The polymer for forming an organic anti-reflective coating layer is represented by following Formula. In Formula, R is hydrogen atom, C1˜C20 alkyl group, C1˜C10 alcohol group or epoxy group, R1 is independently hydrogen atom, n is an integer of 1-50, R2 is C1˜C20 alkyl group, C3˜C20 cycloalkyl group, C6˜C20 aryl group or C7˜C12 arylalkyl group, R3 is hydrogen atom, C1˜C10 alcohol group or epoxy group and POSS is a polyhedral oligosilsesquioxane.

Abstract: The present invention provides an organic anti-reflection coating composition comprising a copolymer represented by the following Formula 1, a light absorbent, a thermal acid generating agent, and a curing agent: wherein R1, R2 and R3 are each independent to each; R1 represents hydrogen or an alkyl group having 1 to 10 carbon atoms; R2 represents hydrogen, an alkyl group having 1 to 10 carbon atoms or an arylalkyl group having 1 to 20 carbon atoms; R3 is hydrogen or a methyl group; m and n are repeating units in the main chain, while m+n=1, and they have values of 0.05<m/(m+n)<0.95 and 0.05<n/(m+n)<0.95. The anti-reflection coating using the polymer of the invention has excellent adhesiveness and storage stability, and a very high dry etching rate, and exhibits excellent resolution in both C/H patterns and L/S patterns.

Abstract: New photoresist systems are provided that comprise an underlying processing (or barrier) layer composition and an overcoated photoresist layer. Systems of the invention can exhibit significant adhesion to SiON and other inorganic surface layers.

Abstract: A (meth)acrylate compound having an aromatic acid-labile group, the (meth)acrylate compound being represented by the following Formula 1: In Formula I, R1 is hydrogen or methyl, R2 is hydrogen, a substituted or unsubstituted alkyl, or a substituted or unsubstituted aryl, R3 is hydrogen, a substituted or unsubstituted alkyl, or a substituted or unsubstituted aryl, AR is a substituted or unsubstituted phenyl, or a substituted or unsubstituted aryl having from two to four fused aromatic rings, and carbon CAR is bonded directly to an aromatic ring of AR.

Abstract: The present invention relates to an antireflective composition comprising a thermal acid generator and an epoxy polymer comprising at least one unit of structure 1, at least one unit of structure 2, where, R1 to R12 are independently selected from hydrogen and C1-C4 alkyl, structure 1 has a configuration selected from cis, trans or mixture thereof, and x and y are the mole % of the monomeric units in the polymer. The invention also relates to a process for manufacturing a microelectronic device.

Abstract: Mask patterns include a resist pattern and a gel layer on a surface of the resist pattern having a junction including hydrogen bonds between a proton donor polymer and a proton acceptor polymer. Methods of forming the mask patterns and methods of fabricating a semiconductor device using the mask patterns as etching masks are also provided.

Abstract: A hardmask composition includes an organic solvent and one or more aromatic ring-containing polymers represented by Formula 1, 2 and 3:

Abstract: A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.

Abstract: Bottom antireflective coating (BARC) that exhibit enhanced wet strip rates, BARC compositions for fabricating such BARCs, and methods for manufacturing such BARC compositions are provided. According to one exemplary embodiment, a bottom antireflective coating (BARC) composition comprises an inorganic-based compound, an absorbing material, and a wet strip-rate modifier combination. The wet strip-rate modifier composition comprises a combination of a short chain linear alcohol and dipropylene glycol (DPG), a combination of the short chain linear alcohol and tetraethylene glycol (TEG), a combination of DPG and TEG, or a combination of the short chain linear alcohol, DPG, and TEG.

Abstract: A lithographic printing plate precursor includes, in the following order: a support; an intermediate layer; and an image-forming layer, and the intermediate layer contains a polymer (A) comprising a repeating unit (a1) represented by the formula (I) as defined herein.

Abstract: Provided is a novel silicone copolymer which exhibits high absorption even in a far-ultraviolet region of 200 nm or more, and also is soluble in an alkaline reagent since it has a phenolic hydroxyl group. The silicone copolymer comprises a silsesquioxane having a phenol unit and comprises a silsesquioxane having a condensed polycyclic hydrocarbon.

Abstract: A composition for forming an antireflective coating for use in a photolithography process using exposure light of up to 200 nm comprises a silicon-containing polymer obtained through hydrolytic condensation of a silicon-silicon bond-containing silane compound having formula: R(6-m)Si2Xm wherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic material so that a substrate can be processed at a high accuracy.

Abstract: A method of forming an image using a topcoat composition. A composition that includes functionalized polyhedral oligomeric silsesquioxanes derivatives of the formulas TmR3 where m is equal to 8, 10 or 12 and QnMnR1,R2,R3 where n is equal to 8, 10 or 12 are provided. The functional groups include aqueous base soluble moieties. Mixtures of the functionalized polyhedral oligomeric silsesquioxanes derivatives are highly suitable as a topcoat for photoresist in photolithography and immersion photolithography applications.

Abstract: A composition that includes functionalized polyhedral oligomeric silsesquioxanes derivatives of the formulas TmR3 where m is equal to 8, 10 or 12 and QnMnR1,R2,R3 where n is equal to 8, 10 or 12 are provided. The functional groups include aqueous base soluble moieties. Mixtures of the functionalized polyhedral oligomeric silsesquioxanes derivatives are highly suitable as a topcoat for photoresist in photolithography and immersion photolithography applications.

Abstract: A method for imaging a printing form, in particular within a press, is disclosed. A printing form having a rewritable surface being provided, and an imaging material being applied to the surface of the printing form in order to provide a permanent and erasable image. During imaging, in a first step the imaging material is sprayed onto the surface with a relatively low resolution in an image data-oriented manner, and in a second step the imaging material sprayed onto the surface being exposed on the surface with a relatively high resolution in an image data-oriented manner.

Abstract: Disclosed herein is a photoresist composition suitable for coating onto a large substrate and having improved coating uniformity to prevent occurrence of stains, a coating method thereof, a method of forming an organic film pattern using the same, and a display device fabricated thereby. The present invention thus provides a photoresist composition comprising a polymeric resin with an incorporated polysiloxane resin, a photosensitive compound, and an organic solvent. Accordingly, the photoresist composition can be coated onto a large substrate by a spinless coating method, and thereby coating uniformity can be improved, the occurrence of stains such as cumulous stains and resin streaks can be prevented, and the coating rate and quality of a final product prepared using the photoresist composition can also thereby be enhanced.

Abstract: Provided herein are hardmask compositions for resist underlayer films, wherein according to some embodiments of the invention, hardmask compositions include a polymer prepared by the reaction of a compound of Formula 1 with a compound of Formula 2 (R)m—Si—(OCH3)4-m??(2) in the presence of a catalyst, wherein R is a monovalent organic group, n is an integer from 3 to 20, and m is 1 or 2; and an organic solvent. Also provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the invention. Further provided are semiconductor integrated circuit devices produced by a method embodiment of the invention.

Abstract: A silicon-containing film is formed from a heat curable composition comprising (A-1) a silicon-containing compound obtained through hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, (A-2) a silicon-containing compound obtained through hydrolytic condensation of a hydrolyzable silicon compound in the presence of a base catalyst, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Ce, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, (D) a cyclic ether-substituted alcohol, and (E) an organic solvent. The silicon-containing film ensures effective pattern formation, effective transfer of a photoresist pattern, and accurate processing of a substrate.

Abstract: Provided is a method for forming a resist lower layer material for use in a multilayer resist process, especially two-layer resist process or three-layer resist process, having a function of neutralizing an amine contaminant from a substrate, thereby reducing a harmful effect such as trailing skirts of a resist pattern of an upper layer resist. Specifically, there is provided a material for forming a lower layer of a chemically amplified photoresist layer comprising a crosslinkable polymer and a thermal acid generator that can generate an acid by heating at 100° C. or greater and is represented by the general formula (1a): R1CF2SO3?(R2)4N+??(1a), as well as a resist lower layer substrate comprising a resist lower layer formed using said material.

Abstract: A phototool comprises an optically transparent substrate having designed pattern and a protective layer on the substrate. The protective layer comprises a cured hardcoat composition. The hardcoat composition comprises (i) one or more epoxy silane compounds (ii) one or more fluorochemical additives selected from the group consisting of perfluoropolyether-urethane silanes and silane-functionalized perfluoropolyether acrylate oligomers, and (iii) photo-acid generator.

Abstract: A silicon-containing film is formed from a heat curable composition comprising (A-1) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst and removing the acid catalyst, (A-2) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of a basic catalyst and removing the basic catalyst, (B) a hydroxide or organic acid salt of lithium, sodium, potassium, rubidium or cesium, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The silicon-containing film allows an overlying photoresist film to be patterned effectively.

Abstract: The invention includes new organic-containing compositions that can function as an antireflective layer for an overcoated photoresist. Compositions of the invention also can serve effectively as a hard mask layer by exhibiting a sufficient plasma etch selectivity from an undercoated layer. Preferred compositions of the invention have a high Si content and comprise a blend of distinct resins.

Abstract: There is disclosed a thermosetting silicon-containing antireflection film-forming composition, to form a silicon-containing antireflection film in a multilayer resist process used in a lithography, wherein the composition is at least capable of forming—on an organic film that is an underlayer film having a naphthalene skeleton—a silicon-containing antireflection film whose refractive index “n” and extinction coefficient “k” at 193 nm satisfy the following relationship: 2n?3.08?k?20n?29.4 and 0.01?k?0.5.

Abstract: A polymer which has siloxane group at a main chain thereof and a composition including the same, for forming an organic anti-reflective coating layer are disclosed. The polymer for forming an organic anti-reflective coating layer is represented by following Formula. In Formula, R is hydrogen atom, C1˜C20 alkyl group, C1˜C10 alcohol group or epoxy group, R1 is independently hydrogen atom, n is an integer of 1-50, R2 is C1˜C20 alkyl group, C3˜C20 cycloalkyl group, C6˜C20 aryl group or C7˜C12 arylalkyl group, R3 is hydrogen atom, C1˜C10 alcohol group or epoxy group and POSS is a polyhedral oligosilsesquioxane.

Abstract: The invention relates to an antireflective coating composition capable of being coated beneath a photoresist layer, where the antireflective coating composition comprises a polymeric crosslinker and a solvent mixture, where the solvent mixture comprises at least one primary organic solvent and at least one secondary organic solvent selected from any of structures 1, 2 and 3, where, R1, R3, and R4, are selected from H and C1-C6 alkyl, and R2, R5, R6, R7, R8, and R9 are selected from C1-C6 alkyl, and n=1-5. The invention also relates to an antireflective coating composition capable of being coated beneath a photoresist layer, where the antireflective coating composition comprises a polymeric crosslinker and a solvent mixture, where the solvent mixture comprises at least 2 organic solvents, and where the antireflective coating composition has a liquid particle count at 0.2 micron of less than 100/ml after accelerated aging.

Abstract: A substrate having a photoresist film, capable of easily performing immersion lithography with high precision and stability, is provided. A surface tension of the substrate in a periphery region is lower than that of the substrate in a rest region. Immersion liquid supplied onto the photoresist film hardly leaks out, and the bubbles hardly occur in the immersion liquid.

Abstract: A lithographic printing plate precursor includes in the following order: a support; an image-recording layer containing (A) an infrared absorbing agent, (B) a polymerization initiator and (C) a polymerizable compound; and a protective layer, an unexposed area of the image-recording layer is capable of being removed with at least one of printing ink and dampening water on a printing machine, and the lithographic printing plate precursor contains a compound represented by the following formula (I): wherein R1 represents an alkyl, alkenyl or aryl group having from 6 to 36 carbon atoms which may have a substituent, R2 and R3 each independently represents a methyl group, an ethyl group, a hydroxyethyl group or a hydroxypropyl group, L represents a single bond or a divalent connecting group, and n represents an integer of from 0 to 11.

Abstract: A thermoacid generator for antireflective film formation, characterized by being represented by the following formula (1): (wherein R1 represents C1-20 alkyl, alkenyl, oxoalkyl, or oxoalkenyl (hydrogen atoms in these groups may have been replaced with fluorine atoms); R2 represents linear, branched, or cyclic C1-20 alkyl, alkenyl, oxoalkyl, or oxoalkenyl, C6-20 aryl, or C7-12 aralkyl or aryloxoalkyl; R3 represents hydrogen or alkyl; and Y? represents a non-nucleophilic counter ion); a composition for forming an antireflective film; and an antireflective film made from the composition. With the thermoacid generator and composition, satisfactory etching resistance and the satisfactory ability to prevent the reflection of short-wavelength light (ability to absorb short-wavelength light) are attained. Furthermore, the antireflective film can inhibit an overlying photoresist film from generating a scum.

Abstract: The present invention relates to barrier layer compositions that are applied above a photoresist composition for immersion lithography processing. In a further aspect, new methods are provided for immersion lithography processing.

Abstract: A negative-working photopolymerization type photosensitive lithographic printing plate precursor capable of conducting image recording with laser, includes: a hydrophilic support; a photopolymerizable photosensitive layer containing (i) a sensitizing dye having an absorption maximum in a wavelength range of from 360 to 450 nm, (ii) a hexaarylbiimidazole compound and (iii) an addition polymerizable compound having an ethylenically unsaturated double bond; and a protective layer, in this order, wherein the protective layer has oxygen permeability at 25° C. under one atmosphere of from 25 ml/m2·day to 200 ml/m2·day.

Abstract: The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for 193 nm lithography. The inventive composition is soluble in aqueous base solutions and has low refractive index at 193 nm. The inventive composition comprises an aqueous base-soluble polymer having a backbone and a fluorinated half ester moiety. The fluorinated half ester moiety is pendant from the backbone. The present invention also discloses a method of forming a patterned layer on a substrate by using the inventive composition in lithography.

Abstract: A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the composition including a solvent and an organosilane polymer, the organosilane polymer being a condensation polymerization product of at least one first compound represented by Chemical Formulae 1 and 2 and at least one second compound represented by Chemical Formulae 3 to 5.

Abstract: There is disclosed a bottom resist layer composition for a multilayer-resist film used in lithography comprising, at least, a polymer comprising a repeating unit represented by the following general formula (1). Thereby, there can be provided a bottom resist layer composition that exhibits optimum n value and k value on exposure to shorter wavelengths, excellent etching resistance under conditions for etching substrates, and is promising for forming a bottom resist layer used for a multilayer-resist process such as a silicon-containing bilayer resist process or a trilayer resist process using a silicon-containing intermediate resist layer.

Abstract: The present invention provides a planographic printing plate precursor, including: a support; and a photosensitive layer containing a polymerizable compound; an oxygen barrier layer; and a protective layer containing a filler (preferably an organic resin particle), the layers being formed in this order on the support. The present invention also provides a stack of planographic printing plate precursors, produced by stacking the planographic printing plate precursors with the photosensitive layer side outermost layer and the support side rear surface of the adjacent plate precursor in direct contact with each other.

Abstract: A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen asking during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R1bR2cSi (OR3)4-a??(A) wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.

Abstract: The present invention relates to an antireflecting coating composition which is capable of forming a crosslinked coating underneath a layer of photoresist comprising a silicon polymer, where the silicon polymer comprises at least one unit with the structure 1, where, R1 is selected from C1-C4 alkyl. The invention also relates to a process for imaging this composition.

Abstract: A first aspect of the present invention is a topcoat composition, comprising: a copolymer represented by the formula (2): wherein n and m represent respective molar fractions such that n+m=1.