Abstract: Embodiments in accordance with the present invention provide for non-self imagable norbornene-type polymers useful for immersion lithographic processes, methods of making such polymers, compositions employing such polymers and immersion lithographic processes that make use of such compositions. More specifically the embodiments of the present invention are related to norbornene-type polymers useful for forming top-coat layers for overlying photoresist layers in immersion lithographic process and the process thereof.

Abstract: Negative-working lithographic printing plate precursor a negative-working imagable layer and an outermost water-soluble overcoat layer that is disposed directly on the negative-working imagable layer. The outermost water-soluble overcoat layer comprises: (1) one or more film-forming water-soluble polymeric binders, and (2) organic wax particles dispersed therein. The organic wax particles have an average largest dimension of at least 0.05 ?m and up to and including 0.7 ?m, as determined from a scanning electron micrographic of the dried outermost water-soluble overcoat layer. Useful organic wax particles include fluorinated or non-fluorinated hydrocarbon wax particles.

Abstract: A coating material for use during a lithography process. In an example, a coating material disposed on a material layer includes a polymer and a quencher catcher chemically bonded to the polymer. The quencher catcher substantially neutralizes any quencher that diffuses into the coating material from the material layer.

Abstract: A sulfonium salt of a naphthyltetrahydrothiophenium cation having a fluoroalkoxy chain with a specific anion is provided. The sulfonium salt is used as a photoacid generator to form a resist composition which when processed by immersion lithography, offers advantages of restrained dissolution in the immersion water and less pattern dependence or dark/bright bias.

Abstract: A resin composition for forming a top coat which can be formed on a photoresist film without causing intermixing with the photoresist film, can maintain a stable film coating which is not eluted into a medium during immersion lithography, does not impair pattern profiles during dry exposure (which is not immersion lithography), and can be easily dissolved in an alkaline developer. The resin is a copolymer which includes at least one recurring unit (I) selected from the group consisting of a recurring unit having a group shown by the following formula (1), a recurring unit having a group shown by the following formula (2), and a recurring unit having a carboxyl group, and a recurring unit (II) having a sulfo group, the copolymer having a weight average molecular weight determined by gel permeation chromatography of 2,000 to 100,000.

Abstract: Disclosed is a composition for forming a top antireflective film, which comprises at least one fluorine-containing compound and a quaternary ammonium compound represented by the formula (1) [wherein at least one of R1, R2, R3, and R4 represents a hydroxyl group or an alkanol group, and the others independently represent a hydrogen or an alkyl group having 1 to 10 carbon atoms; and X? represents a hydroxyl group, a halide ion or a sulfate ion], and optionally a water-soluble polymer, an acid, a surfactant and an aqueous solvent. The composition for forming a top antireflective film can exhibit the same levels of functions as those of conventional top antireflective film-forming compositions when applied in a smaller amount.

Abstract: A method of developing a photocurable printing blank to produce a relief pattern comprising a plurality of relief dots. The photocurable printing blank comprises a backing layer having at least one photocurable layer disposed thereon, a barrier layer disposed on the at least one photocurable layer, and a laser ablatable mask layer disposed on top of the barrier layer.

Abstract: A polymer for forming a resist protection film which is used in a liquid immersion lithography process to protect a photoresist layer, a composition for forming a resist protection film, and a method of forming a pattern of a semiconductor device using the composition are disclosed. The polymer for forming a resist protection film includes a repeating unit represented by Formula 1 below. In Formula 1, R1 is a hydrogen atom (H), a fluorine atom (F), a methyl group (—CH3), a C1-C20 fluoroalkyl group, or a C1-C5 hydroxyalkyl group, R2 is a C1-C10 linear or branched alkylene group or alkylidene group, or a C5-C10 cycloalkylene group or cycloalkylidene group, X is wherein n is an integer of 0 to 5 and * denotes the remaining moiety of Formula 1 after excluding X, and m, the stoichiometric coefficient of X, is 1 or 2.

Abstract: A composition of matter. The composition of matter includes a polymer having an ethylenic backbone and comprising a first monomer having an aromatic moiety, a second monomer having a base soluble moiety or an acid labile protected base soluble moiety, and a third monomer having a fluoroalkyl moiety. Also a photoresist formulation including the composition of matter and a method of imaging using the photoresist formulation including the composition of matter.

Abstract: The present invention involves a method for making a relief image. A film that includes a carrier sheet and an imageable material is used to form a mask image that is opaque to a curing radiation. In one embodiment, the mask image is formed on the carrier sheet while in another embodiment, the mask image is formed on a receptor sheet. The mask image is then transferred to a photosensitive material, such as a flexographic printing plate precursor. The resulting assembly is exposed to the curing radiation resulting in exposed and unexposed areas of the photosensitive material. The carrier sheet or the receptor sheet may be removed from the mask image either before or after exposure to the curing radiation. Finally, the photosensitive material and mask image assembly is developed with a suitable developer to form a relief image.

Abstract: A flexographic printing plate precursor can be imaged and developed to provide a flexographic relief image. This flexographic printing plate precursor includes a radiation curable layer in which a flexographic relief image can be formed. It also includes a transparent release layer disposed on the radiation sensitive layer, which release layer consists essentially of a miscible mixture of a polyamide in an amount of at least 20 and up to and including 80 weight % and a natural or synthetic rubber latex in an amount of at least 20 and up to and including 80 weight %. The transparent release layer has a peel force in relation to an imaged film comprising a mask image of at least 50 and up to and including 200 g/inch. This precursor can be used in optical contact with the imaged film to form a relief image using curing radiation through the mask image.

Abstract: In some embodiments, without limitation, a hydrophobic photoresist material and a method of making the photoresist material are provided. The photoresist material is derived by creating a high resolution insoluble, or more soluble, polymer structure as a result of a controlled chemical reaction with a functionalized perfluoropolyether. Also provided are methods of coating an inkjet printhead surface and processing the coated inkjet printhead surface.

Abstract: An upper layer film forming composition for forming an upper layer film on the surface of a photoresist film includes (A) a resin dissolvable in a developer for the photoresist film and (B) a compound having a sulfonic acid residue group, the composition forming an upper layer film with a receding contact angle to water of 70° or more. The upper layer film forming composition of the present invention can form an upper layer film which has a sufficient transparency and is stably maintained without eluting the components into a medium without being intermixed with a photoresist film, can form a resist pattern with high resolution while effectively suppressing a defect, and can suppress a blob defect.

Abstract: Disclosed are a chemically amplified positive-type photoresist composition for a thick film, a chemically amplified dry film for a thick film, and a method for producing a thick film resist pattern, all of which are capable of obtaining a satisfactory resist pattern with high sensitivity even on a substrate having a portion formed of copper on an upper surface thereof. The chemically amplified positive-type photoresist composition for a thick film comprises component (A) which includes at least one compound capable of producing an acid upon irradiation with an actinic ray or radiation, and component (B) which includes at least one resin whose alkali solubility increases by the action of an acid, in which the component (A) includes an onium fluorinated alkyl fluorophosphate having a specific structure.

Abstract: A positive resist composition comprises: (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (B) a resin of which solubility in an alkali developer increases under action of an acid; and (C) a compound capable of decomposing under action of an acid to generate an acid.

Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.

Abstract: A method is described for producing an imaged lithographic printing plate, wherein the developer comprises a hydrophilic polymer comprising (m1) structural units derived from at least one compound comprising both a polyalkylene oxide chain and a free radical polymerizable group, and (m2) structural units derived from at least one compound copolymerizable with the free radical polymerizable group of (i) and comprising at least one functional group with pKs<5.

Abstract: A photosensitive element comprises a support, a photosensitive layer and a protective film laminated in that order, wherein the photosensitive layer is composed of a photosensitive resin composition containing a binder polymer, a photopolymerizing compound, a photopolymerization initiator and a compound with a maximum absorption wavelength of 370-420 nm, and the protective film is composed mainly of polypropylene.

Abstract: An upper-layer film-forming composition includes (A) a resin that is soluble in an alkaline aqueous solution, and includes a fluorine atom, and (B) a solvent component that includes (B1) a solvent having a boiling point at 101.3 kPa of 150° C. or more and a static surface tension of 23.0 mN/m or less, the upper-layer film-forming composition being used to form an upper-layer film on a photoresist film.

Abstract: The objective of the present invention is to provide a resin for forming an upper antireflective film and a composition for forming an upper antireflective film that can reduce a standing wave effect satisfactorily and lead excellent solubility in an alkaline developer in lithography and a method for forming a resist pattern. Specifically, the resin for forming an upper antireflective film has at least one unit selected from a repeating unit represented by the formula (1) and a repeating unit represented by the formula (2), has a weight average molecular weight of 1,000 to 100,000 as measured by GPC method, and is soluble in an alkaline developer. (In the formulae (1) and (2), R1 to R14 independently represent a hydrogen atom, —OH, —COOH or —SO3H, provided that all of R1 to R7 or R8 to R14 do not represent a hydrogen atom in a molecule.

Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.

Abstract: A curable composition containing (A) a polymerizable compound having an alkyleneoxy group having two or more carbon atoms, (B) a polymerizable compound lacking an alkyleneoxy group having two or more carbon atoms, (C) an i-line absorber, (D) a photopolymerization initiator, (E) an alkali-soluble resin, and (F) a pigment, wherein a mass ratio [(A)/((A)+(B))] is from 0.5 to 0.9, and an i-line transmittance obtainable when the curable composition is formed into a coating film having a thickness of 0.7 ?m, is 10% or less. The curable composition of the invention has enhanced adhesiveness upon forming a micro pattern, and can reduce development residues in unexposed non-cured areas. The curable composition of the invention is suitable for the use in color filters.

Abstract: A method of controlling the shape of a plurality of relief dots created in a photosensitive printing blank during a digital platemaking process is provided. The photosensitive printing blank comprises a laser ablatable mask layer disposed on at least one photocurable layer. The method comprises the steps of: a) laser ablating the laser ablatable mask layer to create an in situ negative in the laser ablatable mask layer; b) applying a barrier membrane to the photosensitive printing blank; c) exposing the at least one photocurable layer to actinic radiation through the in situ negative; and d) developing the imaged and exposed photosensitive printing blank to reveal the relief image therein, said relief image comprising the plurality of relief dots.

Abstract: Disclosed is an organic photoreceptor comprising on an electrically conductive support a light-sensitive layer and a surface layer, wherein the surface layer comprises a resin formed by curing a photocurable compound containing at least one polar group and at least one photocurable-functional group and a particulate metal oxide having a water absorption of 0.1 to 10%. There are also disclosed an image forming apparatus and a process cartridge.

Abstract: A compound synthesis method includes bonding a first compound to a substrate to form a first film. A second film is formed on the first film using an acid-transfer composition including (A) a polymer that includes a structural unit shown by a following formula (1) and a structural unit shown by a following formula (2), (B) a photoacid generator shown by a following formula (3), and (C) a sensitizer shown by a following formula (4). The second film is exposed to remove the protecting group from the first compound under an exposed area of the second film. An acid generated in the exposed area of the second film is transferred to the first film. The second film after being exposed is removed. A second compound is bonded to the first compound from which the protecting group has been removed.

Abstract: A method of making a relief image printing element from a photosensitive printing blank is provided. A photosensitive printing blank with a laser ablatable layer disposed on at least one photocurable layer is ablated with a laser to create an in situ mask. The printing blank is then exposed to at least one source of actinic radiation through the in situ mask to selectively cross link and cure portions of the photocurable layer. Diffusion of air into the at least one photocurable layer is limited during the exposing step and preferably at least one of the type, power and incident angle of illumination of the at least one source of actinic radiation is altered during the exposure step. The resulting relief image comprises a plurality of dots and a dot shape of the plurality of dots is produced that is highly resistant to print fluting for printing on corrugated board.

Abstract: A composition for forming an anti-reflection film for use in forming an anti-reflection film on a resist film is provided, the composition for forming an anti-reflection film being easily handled, and capable of forming an anti-reflection film having superior optical characteristics similarly to anti-reflection films formed using PFOS. A composition for forming an anti-reflection film to be provided on a resist film which includes a certain fluorine compound. This composition for forming an anti-reflection film can form an anti-reflection film having superior optical characteristics since the certain fluorine compound contributes to improvement of the optical characteristics of the anti-reflection film.

Abstract: A pattern forming method includes providing and curing a under-layer film containing a radiation-sensitive acid generator which generates an acid upon exposure to radiation on a substrate. The under-layer film is irradiated with radiation through a mask to cause an acid to be selectively generated in an exposed area of the under-layer film. An upper-layer film which does not contain a radiation-sensitive acid generator and which contains a composition capable of polymerizing or crosslinking by an action of an acid is provided. A cured film is provided by polymerization or crosslinking selectively in an area of the upper-layer film corresponding to the exposed area of the under-layer film in which the acid has been generated. An area of the upper-layer film corresponding to an area of the under-layer film in which the acid has not been generated is removed.

Abstract: A topcoat material for immersion lithography and a method of performing immersion lithography using the topcoat material. The topcoat material includes a mixture of a first polymer and a second polymer. The first and second polymers of the topcoat material, when the topcoat material is formed into a topcoat layer between an immersion fluid and a photoresist layer, disperse non-homogenously throughout the topcoat layer.

Abstract: Topcoat compositions are provided that can be used in immersion lithography to form photoresist patterns. The topcoat compositions include a polymer system that includes a matrix polymer and a surface active polymer. The matrix polymer is present in the composition in a larger proportion by weight than the surface active polymer, and the surface active polymer has a lower surface energy than a surface energy of the matrix polymer. A solvent system includes a first organic solvent chosen from gamma-butyrolactone and/or gamma-valerolactone, and a second organic solvent. The first organic solvent has a higher surface energy than a surface energy of the surface active polymer, and a higher boiling point than a boiling point of the second organic solvent.

Abstract: A process for tuning the water contact angle of an immersion photoresist layer or immersion topcoat layer by modification of the top surface. The surface modification is a layer of fluorinated polymer.

Abstract: A lithographic printing plate precursor includes, in the following order: a support; an image-recording layer which is capable of forming an image by removing an unexposed area of the image-recording layer with at least one of printing ink and dampening water on a printing machine after exposure and contains an infrared absorbing dye, a polymerization initiator, a polymerizable compound and a binder polymer having an alkylene oxide group; and a protective layer containing a hydrophilic polymer which contains at least a repeating unit represented by the formula (1) as defined herein, a repeating unit represented by the formula (2) as defined herein, and a repeating unit represented by the formula (4) as defined herein, and in which a content of the repeating unit represented by the formula (4) is from 0.3 to 5.0% by mole based on total repeating units of the hydrophilic polymer.

Abstract: An upper layer-forming composition includes a resin, and a solvent. The resin is dissolvable in a developer for a photoresist film which is to be covered by the upper layer-forming composition to form a pattern by exposure to radiation. The solvent dissolves the resin in the solvent. The solvent includes a compound shown by a formula (1). Each of R1 and R2 independently represents a hydrocarbon group having 1 to 8 carbon atoms or a halogenated hydrocarbon group.

Abstract: The object of the invention is to provide a composition for forming an upper layer film for immersion exposure capable of forming an upper layer film effectively inhibited from developing defects through an immersion exposure process, such as a watermark defect and dissolution residue defect. Also provided are an upper layer film for immersion exposure and a method of forming a resist pattern. The composition for forming an upper layer film includes a resin ingredient and a solvent. The resin ingredient includes a resin (A) having at least one kind of repeating units selected among those represented by the formulae (1-1) to (1-3) and at least either of the two kinds of repeating units represented by the formulae (2-1) and (2-2).

Abstract: A fluorinated monomer of cyclic acetal structure has formula (1) wherein R is a C1-C20 alkyl group which may be substituted with halogen or separated by oxygen or carbonyl, and Z is a divalent organic group which forms a ring with alkylenoxy and contains a polymerizable unsaturated group. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water sliding property, lipophilicity, acid lability and hydrolyzability and is useful in formulating a protective coating composition and a resist composition.

Abstract: Self-aligned spacer multiple patterning method are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.

Abstract: A positive tone photosensitive composition comprising: (A) an alkali-soluble resin having a phenolic hydroxyl group; (B) a phenol resin modified by a compound having an unsaturated hydrocarbon group containing 4 to 100 carbon atoms; (C) a compound that generates an acid by the action of light; (D) a thermal cross-linker that crosslinks the ingredient (A) and the ingredient (B) by heating; and (E) a solvent.

Abstract: The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened, e.g., in form of lines and spaces pattern, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.

Abstract: Biomass feedstocks (e.g., plant biomass, animal biomass, and municipal waste biomass) are processed to produce useful products, such as fuels. For example, systems are described that can use feedstock materials, such as cellulosic and/or lignocellulosic materials and/or starchy materials, to produce a product or intermediate, e.g., energy, a food, a fuel, or a material.

Abstract: The invention is directed to a coating composition containing a polymer having a structural unit represented by the following formula (1), an image-forming material including, in the following order: a support; a photosensitive layer containing a radical polymerizable compound and a photo initiator; and a protective layer containing the coating composition, a lithographic printing plate precursor including, in the following order: a support; a photosensitive layer containing a radical polymerizable compound and a photo initiator; and a protective layer containing the coating composition, and an oxygen-blocking film including a layer containing the coating composition: wherein Mn+ represents a cation having an n-valent positive charge and n represents an integer of from 1 to 4,

Abstract: A method of patterning a substrate includes processing first regions of the substrate to form a first pattern, the first regions defining a second region between adjacent first regions, arranging a block copolymer on the first and second regions, the block copolymer including a first component and a second component, the first component of the block copolymer being aligned on the first regions, and selectively removing one of the first component and the second component of the block copolymer to form a second pattern having a pitch that is less than a pitch of a first region and an adjacent second region.

Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.

Abstract: A substrate for use in a lithographic projection apparatus. The substrate includes a sealing coating that covers at least a part of a first interface between two layers on the substrate, or between a layer and the substrate, and does not extend to a central portion of the substrate.

Abstract: Some embodiments include methods of forming patterns in which a block copolymer-containing composition is formed over a substrate, and is then patterned to form a first mask. The block copolymer of the composition is subsequently induced into forming a repeating pattern within the first mask. Portions of the repeating pattern are then removed to form a second mask from the first mask. The patterning of the block copolymer-containing composition may utilize photolithography. Alternatively, the substrate may have regions which wet differently relative to one another with respect to the block copolymer-containing composition, and the patterning of the first mask may utilize such differences in wetting in forming the first mask.

Abstract: It is disclosed a photosensitive resin composition comprising (a) a binder polymer based on a copolymer containing benzyl (meth)acrylate as a building block, (b) a photopolymerizable compound having at least one polymerizable ethylenically unsaturated group in the molecule and (c) a photopolymerization initiator based on a hexarylbisimidazole compound, with a light-initiated color former being optionally contained as component (d). The composition has long-term keeping quality, exhibits particularly high resistance to plating and dry etching, as well as assuring improvement in resolution and adhesion; the composition may be used to form a photosensitive dry film.

Abstract: A protective coating composition comprising a polymer of acyl-protected hexafluoroalcohol structure as a base polymer, optionally in admixture with a second polymer containing sulfonic acid amine salt in recurring units is applied onto a resist film. The protective coating is transparent to radiation of wavelength up to 200 nm.

Abstract: The invention describes a base material for screen printing, which comprises a protective film, a screen and an intermediate resist layer comprising photosensitive material.

Abstract: Topcoat layer compositions are provided that are applied above a photoresist composition. The compositions find particular applicability to immersion lithography processing.

Abstract: Negative-working imageable elements such as lithographic printing plate precursors, include a free-radically polymerizable component, an initiator composition that is capable of generating free radicals sufficient to initiate polymerization of the free-radically polymerizable component upon exposure to imaging radiation in the presence of a radiation absorbing compound, a radiation absorbing compound, an aerobic free radical inhibitor, optionally a polymeric binder that is not a free radically polymerizable component, and an anaerobic free radical inhibitor. The molar ratio of the anaerobic free radical inhibitor to the aerobic free radical inhibitor is at least 1:1. This combination of inhibitors provides increased shelf life and good latent image stability particularly when the element includes a polymeric topcoat layer that functions as an oxygen barrier.

Abstract: A printing plate having a substrate and a radiation sensitive, negative working, organic, polymerizable, photosensitive (PS) resin coating non-ionically adhered to the substrate such that the cohesion of the PS coating exceeds the adhesion of the PS coating to the substrate. The PS coating contains active components that participate in radiation induced polymerization, all of which active components are soluble in non-aqueous solvents and none of which active components are soluble or dispersible in any of the group of fluids consisting of water, fountain solution, ink, and press ink. The PS coating has sufficient cohesion and surface tack to adhere to and be mechanically pulled off the substrate by press ink as particulates without dissolution or dispersion into the press ink.