Abstract: A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.

Abstract: A method of making a lithographic printing plate includes the steps of: a) providing a lithographic printing plate precursor including (i) a support having a hydrophilic surface or which is provided with a hydrophilic layer, (ii) a coating on the support including a photopolymerizable layer, a top layer and, optionally, an intermediate layer between the photopolymerizable layer and the support, wherein the photopolymerizable layer includes a polymerizable compound, a polymerization initiator, and a binder, b) image-wise exposing the coating in a plate setter, c) optionally, heating the precursor in a pre-heating unit, and d) treating the precursor in a gumming station, the gumming station including a first and at least a second gumming unit, wherein the precursor is washed in the first gumming unit by applying a gum solution to the coating thereby removing at least a portion of the top layer, and wherein, subsequently, the precursor is developed in the second gumming unit with a gum solution thereby removing

Abstract: Imaged articles and methods for producing imaged articles in which an image has been transferred by dye sublimations techniques to a powder coated substrate are described. The powder coated substrates may include various metals or alloys. The powder coated substrate may include a white powder coating layer and an over cured clear coat layer. The imaged article may be subsequently formed into desired three-dimensional shapes without significant loss in image quality or image degradation.

Abstract: A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film having a receding contact angle of 70 degrees or above with respect to water, wherein the resist composition for negative development contains a resin capable of increasing the polarity by the action of an acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) exposing the resist film via an immersion medium, and (c) performing development with a negative developer.

Abstract: A method of forming a thin film pattern includes: providing a printing roller and a substrate including a thin film; coating the printing roller with an etch-resist solution including a base polymer, a carrier solvent, a tackifier and a surfactant; removing the carrier solvent from the coated etch-resist solution thereby transitioning the etch-resist solution from liquid phase to solid phase; patterning the solid etch-resist; transferring the patterned etch-resist from the printing roller to the substrate; and patterning the thin film corresponding to the transferred etch-resist.

Abstract: Overcoating layer compositions are provided that are applied above a photoresist composition including for immersion lithography processing as well as non-immersion imaging.

Abstract: A lithographic printing plate precursor comprising: a support; and at least one layer comprising an image-recording layer, the image-recording layer comprising (A) an infrared absorber, (B) a polymerization initiator, (C) a polymerizable compound, and (D) a binder polymer, wherein the image recording layer is capable of being removed with at least one of a printing ink and a fountain solution, wherein at least one of said at least one layer comprises a copolymer having (a1) a unit comprising at least one ethylenically unsaturated bond, and (a2) a unit comprising at least one functional group interacting with a surface of the support. And a lithographic printing method in which the lithographic printing plate precursor is used. The copolymer preferably has a hydrophilic segment. The copolymer preferably is contained in an undercoat layer formed between the support and the image-recording layer.

Abstract: A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film, wherein the resist composition contains a resin capable of increasing the polarity by the action of the acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) forming a protective film on the resist film with a protective film composition after forming the resist film and before exposing the resist film, (c) exposing the resist film via an immersion medium, and (d) performing development with a negative developer.

Abstract: A coating material disposed overlying a photo sensitive layer during an immersion lithography process includes a polymer that is substantially insoluble to an immersion fluid and an acid capable of neutralizing a base quencher from the photo sensitive layer.

Abstract: A curable composition, including: a polymerizable compound (a) including an ethylenically unsaturated bond; a binder polymer (b); a radical polymerization initiator (c); and an alicyclic compound (d) including a urea bond is provided.

Abstract: A photosensitive resin composition, a photosensitive resin laminate, and a method for forming a pattern capable of realizing high hardness while using an epoxy group-containing acrylic resin are provided. In a photosensitive resin composition including (A) an epoxy group-containing acrylic resin, (B) a photopolymerization initiator, and (C) a sensitizer, an onium salt having a specific structure is used as the component (B), and at least one kind selected from 1,5-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, and 2,6-dihydroxynaphthalene is used as the component (C).

Abstract: A method of processing an overcoat-free on-press developable lithographic printing plate with ink and/or fountain solution is described. The plate comprises on a substrate a photosensitive layer which is either capable of hardening (negative-working) or solubilization (positive-working) upon exposure to a laser, the non-hardened or solubilized areas of the photosensitive layer being soluble or dispersible in ink and/or fountain solution. The plate is exposed with a laser, heated to an elevated temperature, and then developed with ink and/or fountain solution on a lithographic press. The laser exposed plate is preferably heated by passing through a heating device or while mounted on a lithographic press before on-press development.

Abstract: The present invention provides a photosensitive recording material having a support, and a photosensitive layer and a protective layer formed in this order on or above the support. The photosensitive layer contains a polymerization initiator, a sensitizing agent, and a polymerizable compound. Further, the protective layer contains a water-insoluble and alkali-soluble dye that has an absorption wavelength region different from the absorption wavelength region of the sensitizing agent, and the dye is dispersed in a solid state in the protective layer. The present invention also provides a planographic printing plate precursor including the photosensitive recording material, a stack of the photosensitive recording materials, and a stack of the planographic printing plate precursors.

Abstract: In polymers for an anti-reflective coating, compositions for an anti-reflective coating and methods of forming a pattern of a semiconductor device using the same, the compositions for an anti-reflective coating include a polymer that includes a first repeating unit having a basic side group, a second repeating unit having a light-absorbing group, and a third repeating unit having a cross-linkable group; a photoacid generator; a cross-linking agent; and a solvent. The polymer for the anti-reflective coating, which may have a basic side group chemically bound to a backbone of the polymer, may properly adjust diffusion of an acid in an anti-reflective coating layer to improve the profile of a pattern.

Abstract: In one aspect, the present invention relates to coating compositions that comprise a resin component, wherein the predominant portion of the resin component comprising one or more resins that are at least substantially free of fluorine. Coating compositions of the invention are useful as photoresist overcoat layers, including in immersion lithography processing.

Abstract: A pattern forming method includes a step of forming a pattern of a resist on a surface of a thin film formed on the base material; a step of forming a reverse layer on the pattern of the resist; a step of forming a reverse pattern, of the reverse layer complementary to the pattern of the resist by removing the resist after removing the reverse layer to expose a surface of the resist; a step of forming a hard mask layer including the thin film, on which the reverse layer is formed, by etching the thin film through the reverse pattern of the reverse layer as a mask; and a step of etching the base material through, as a mask, the hard mask layer on which the reverse layer remains or the hard mask layer on which the reverse layer has been removed.

Abstract: (1) A packaged body of lithographic printing plate precursors, wherein an image-recording layer or a protective layer of the outermost surface layer contains an inorganic layered compound. (2) A lithographic printing plate precursor having a protective layer containing an inorganic layered compound, and an image-recording layer containing a binder polymer. (3) A lithographic printing plate precursor having a protective layer containing an inorganic layered compound, and an image-recording layer containing an infrared absorber and an iodonium compound.

Abstract: Provided is a positive resist composition using a resin having, in the polymer main chain, a specific acid decomposable structure and further having, in the side chain thereof, several specific acid decomposable groups, satisfactory in an exposure latitude, a focus latitude, and pattern collapse prevention at a high level, and having reduced development defects; and a pattern forming method.

Abstract: Overcoating layer compositions are provided that are applied above a photoresist composition including for immersion lithography processing as well as non-immersion imaging.

Abstract: A method for masking regions of photoresist in the manufacture of a soldermask for printed circuit boards is disclosed. Following application of photoresist over patterned traces on a substrate, a sheet-like thin film is applied over the photosensitive material. The thin film may adhere to the photosensitive material by way of the adhesive state of the photosensitive material or by way of an adhesive applied to the photosensitive material or the thin film or carried by the thin film. Digital mask printing may proceed on the surface of the thin film. The photosensitive material may then be exposed through the printed photomask, the thin film (with photomask) removed, and the photosensitive material developed.

Abstract: In the liquid immersion lithography process, by simultaneously preventing deterioration of a resist film and deterioration of an immersion liquid employed during liquid immersion lithography which uses various immersion liquids, including water, resistance to post exposure delay of the resist film can be improved without increasing the number of processes, thereby making it possible to form a high resolution resist pattern using liquid immersion lithography. Using an alkaline soluble polymer, a crosslinking agent, and a solvent capable of dissolving them as at least constituent component, a composition is prepared and a protective film is formed on the surface of the resist film to be used, using the composition.

Abstract: There is provided a composition for forming anti-reflective coating containing a urea compound substituted by hydroxyalkyl group or alkoxyalkyl group, and preferably a light absorbing compound and/or a light absorbing resin; a method of forming a anti-reflective coating for a semiconductor device by use of the composition; and a process for manufacturing a semiconductor device by use of the composition. The composition according to the present invention exhibits a good light-absorption to a light having a wavelength used for manufacturing a semiconductor device. Therefore, the composition exerts a high protection effect against light reflection, and has a high dry etching rate compared with photoresist layers.

Abstract: A relief image printing element with an integral imageable printing surface and a method of preparing the relief image printing element are described. The relief image printing element comprises a dimensionally stable base layer; a floor layer comprised of a cured polymer selected from the group consisting of photopolymers, and polymers with a resilience of at least 40% when cured; and at least one layer of an imageable material. Most preferably, the floor layer created by curing the layer through the top of the printing element by face exposure. The printing element may also contain a compressible layer between the base layer and the floor layer.

Abstract: A barrier film material includes, in addition to an alkali-soluble polymer, a multivalent carboxylic acid compound having a plurality of carboxyl groups or a multivalent alcohol compound. Thus, the multivalent carboxylic acid compound or the multivalent alcohol compound is adhered onto the surface of a resist film, and hence, particles having been adhered to the surface of the resist film are removed in removing the barrier film. Also, in the case where the barrier film is removed simultaneously with development, the resist film can be prevented from remaining partly undissolved.

Abstract: Negative-working imageable elements can be imaged and processed to provide lithographic printing plates. These imageable elements are sensitive to infrared radiation but are insensitive to “white” light and thus can be more easily handled under white light conditions. These properties are possible by incorporating a filter dye having a ?max of from about 300 to about 500 nm into the imageable layer of the imageable elements.

Abstract: The invention comprises methods for the photolithographic patterning of features in a photo-curable polymer composition coated onto a plastic substrate. In one embodiment of this invention, the plastic substrate is coated with a reflective film such as a metallic barrier. In another embodiment, the plastic substrate is coated or co-extruded with a polymer barrier layer containing an additive that absorbs the photo-curing radiation. In yet another embodiment the plastic substrate contains an intrinsic additive that absorbs the photo-curing radiation. Combinations of these embodiments are also within the scope of this invention. The methods of the present invention may be advantageously applied to the fabrication of optical waveguides comprising a photo-curable polymer supported on a plastic substrate, but are applicable to the fabrication of any device or object comprising a photo-curable polymer supported on a plastic substrate.

Abstract: Radiation-sensitive negative working element comprising (a) a substrate with a hydrophilic surface and (b) a layer on the hydrophilic surface of the substrate, wherein said layer comprises a modified polymer obtainable by reacting (i) a polymer with —COOH, —SO3H, —P03H2 and/or —PO4H2 in the side chains, wherein the polymer is soluble in aqueous alkaline solutions and the solubility is not changed by IR radiation, and (ii) a salt with an inorganic or organic cation, wherein the modified polymer is soluble in aqueous alkaline solutions and the solubility is not changed by IR radiation, said layer being soluble in aqueous alkaline developer, but is rendered insoluble in aqueous alkaline developer by IR radiation.

Abstract: (1) A packaged body of lithographic printing plate precursors, wherein an image-recording layer or a protective layer of the outermost surface layer contains an inorganic layered compound. (2) A lithographic printing plate precursor having a protective layer containing an inorganic layered compound, and an image-recording layer containing a binder polymer. (3) A lithographic printing plate precursor having a protective layer containing an inorganic layered compound, and an image-recording layer containing an infrared absorber and an iodonium compound.

Abstract: A method of forming an image using a topcoat composition. A composition that includes functionalized polyhedral oligomeric silsesquioxanes derivatives of the formulas TmR3 where m is equal to 8, 10 or 12 and QnMnR1,R2,R3 where n is equal to 8, 10 or 12 are provided. The functional groups include aqueous base soluble moieties. Mixtures of the functionalized polyhedral oligomeric silsesquioxanes derivatives are highly suitable as a topcoat for photoresist in photolithography and immersion photolithography applications.

Abstract: A composition that includes functionalized polyhedral oligomeric silsesquioxanes derivatives of the formulas TmR3 where m is equal to 8, 10 or 12 and QnMnR1,R2,R3 where n is equal to 8, 10 or 12 are provided. The functional groups include aqueous base soluble moieties. Mixtures of the functionalized polyhedral oligomeric silsesquioxanes derivatives are highly suitable as a topcoat for photoresist in photolithography and immersion photolithography applications.

Abstract: Embodiments of the present invention provide EUV (extreme ultraviolet) photoresists comprising photonic crystals, as well as other components. Photonic crystals in general provide the ability not only to block light transmission, but also to create resonant pockets in which light can propagate. The photonic crystals are based on bio-related polymers that are capable of self-assembly into crystalline form.

Abstract: Pattern transfer is achieved by forming a first patterned hard mask layer with a circuit pattern and a plurality of dummy patterns on a substrate, forming a second pattern mask layer on the substrate, exposing the circuit pattern of the first pattern mask layer, and removing a portion of the substrate exposed by the first patterned mask layer, so as to transfer the circuit pattern to the substrate.

Abstract: In the liquid immersion lithography process, by simultaneously preventing deterioration of a resist film and deterioration of an immersion liquid employed during liquid immersion lithography which uses various immersion liquids, including water, resistance to post exposure delay of the resist film can be improved without increasing the number of processes, thereby making it possible to form a high resolution resist pattern using liquid immersion lithography. Furthermore, it is possible to apply a high refractive index liquid immersion medium, used in combination with the high refractive index liquid immersion medium, thus making it possible to further improve pattern accuracy. Using a composition comprising an acrylic resin component having characteristics which have substantially no compatibility with a liquid in which a resist film is immersed, particularly water, and are also soluble in alkaline, a protective film is formed on the surface of a resist film used.

Abstract: Compositions comprising photobleachable organic materials can be bleached by 193 nm light, and brought back to their original state by stimuli after exposure. (reversible photobleaching). We use these compositions in art-known contrast enhancement layers and as a part of a photoresist, especially in optical lithography processes for semiconductor fabrication. They may comprise polymers such as organo-silicon polymers, polymers comprising polymers of aromatic hydroxyl compounds such as phenol and naphthol such as phenol formaldehyde polymers and naphthol formaldehyde polymers styrene polymers and phenolic acrylate polymers or cyclic materials comprising: where the radicals “R” and “Y” represent organo, or substituted organo moieties, Structures I, II, and III represent basic organic skeletons and can be unsubstituted or substituted in any available position with any one or combinations of multiple substituents.

Abstract: A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line.

Abstract: A fluorine-containing polymeric compound obtained by polymerizing only polymerizable monomers represented by general formula (c1-0) shown below: wherein R1 represents a hydrogen atom or a methyl group; R2 represents an aliphatic hydrocarbon group substituted with fluorine atoms, or a group in which a plurality of aliphatic hydrocarbon groups which may be substituted with fluorine atoms are bonded through a linking group containing a hetero atom, with the proviso that at least one of the plurality of aliphatic hydrocarbon groups which may be substituted with fluorine atoms is an aliphatic hydrocarbon group substituted with fluorine atoms.

Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 ?/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

Abstract: A lithographic printing plate precursor, which comprises: a support; an image-recording layer; and a protective layer, in this order, wherein at least one of the image-recording layer and the protective layer comprises a phosphonium salt having a specific structure, and a lithographic printing process, which comprises: exposing a lithographic printing plate precursor; supplying an oil-based ink and a fountain solution comprising a phosphonium salt having a specific structure to the exposed lithographic printing plate precursor on a printing machine to remove an unexposed area of an image-recording layer; and conducting printing.

Abstract: An optical recording medium includes a first substrate having a groove on the side of an outer peripheral portion thereof; a second substrate in contact with the first substrate in the outer peripheral portion; and a recording layer being disposed in a gap between the first substrate and the second substrate and forming a void in cooperation with the first substrate at the portion of the groove.

Abstract: A negative-working photopolymerization type photosensitive lithographic printing plate precursor for exposing with laser, includes: a hydrophilic support; at least one photopolymerizable photosensitive layer; and a protective layer, provided in this order, wherein the photopolymerizable photosensitive layer contains a sensitizing dye, a dye or pigment capable of absorbing light having a wavelength of a laser emission wavelength ±50 nm, which is different from the sensitizing dye; and a photopolymerization initiator.

Abstract: The invention relates to an imaging element and a method of using the imaging element to form a recording element. The imaging element includes a composition sensitive to actinic radiation from a source of radiation having a range of wavelengths and a photoluminescent tag that is responsive to at least one wavelength from the source of radiation. The photoluminescent tag can be used to authenticate the identity of the element, provide information about the element, and/or to establish one or more conditions in a device used to prepare the recording element from the imaging element.

Abstract: A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.

Abstract: A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.

Abstract: Novel, poison-blocking compositions and methods of using those compositions to form poison-blocking layers are provided. The compositions comprise a typical composition used in microlithographic processes, but with a poison-blocking additive included in that composition. The preferred additive is a compound comprising one or more blocked isocyanates. Upon heating to certain temperatures, the blocking group is released from the isocyanate, leaving behind a moiety that is highly reactive with the poisonous amines generated by typical dielectric layers.

Abstract: Lactone-containing compounds having formula (1) are novel wherein R1 is H, F, methyl or trifluoromethyl, R2 and R3 are H or monovalent hydrocarbon groups, or R2 and R3 may together form an aliphatic hydrocarbon ring, R4 is H or CO2R5, R5 is a monovalent hydrocarbon group, W is CH2, O or S, and k1 is 3, 4 or 5. They are useful as monomers to produce polymers which are transparent to radiation ?500 nm. Radiation-sensitive resist compositions comprising the polymers as base resin exhibit excellent properties including resolution, LER, pattern density dependency and exposure margin.

Abstract: Positive-working imageable elements comprise a radiation absorbing compound and inner and outer layers on a substrate having a hydrophilic surface. The inner layer comprises a specific polymeric binder represented by Structure (I): -(A)w-(B)x-(C)y-(D)z-??(I) wherein A represents recurring units derived from one or more N-alkoxymethyl (alkyl)acrylamides or alkoxymethyl (alkyl)acrylates, B represents recurring units derived from one or more ethylenically unsaturated polymerizable monomers having a pendant cyano group, C represents recurring units derived from one or more ethylenically unsaturated polymerizable monomers having one or more carboxy, sulfonic acid, or phosphate groups, D represents recurring units derived from one or more ethylenically unsaturated polymerizable monomers other than those represented by A, B, and C, w is from about 3 to about 80 weight %, x is from about 10 to about 85 weight %, y is from about 2 to about 80 weight %, and z is from about 10 to about 85 weight %.

Abstract: A method for forming a pattern of a semiconductor device using an immersion lithography process includes pretreating a top portion of the photoresist film with an alkane solvent or alcohol in the immersion lithography process to form a uniform over-coating film.

Abstract: There is provided a polymerizable composition comprising (A) a binder polymer, (B) a polymerizable compound having an unsaturated group, and (C) a diaryl iodonium salt having at least two electron-donating groups. The iodonium salt (C) preferably has three or more electron-donating groups. This polymerizable composition is useful as a recording layer of a negative type planographic printing plate precursor.

Abstract: A composition suitable for use as a planarizing underlayer in a multilayer lithographic process is disclosed. The inventive composition comprises a polymer containing heterocyclic aromatic moieties. In another aspect, the composition further comprises an acid generator. In yet another aspect, the composition further comprises a crosslinker. The inventive compositions provide planarizing underlayers having outstanding optical, mechanical and etch selectivity properties. The present invention also encompasses lithographic structures containing the underlayers prepared from the compositions of the present invention, methods of making such lithographic structures, and methods of using such lithographic structures to pattern underlying material layers on a substrate.

Abstract: A substrate having a photoresist film, capable of easily performing immersion lithography with high precision and stability, is provided. A surface tension of the substrate in a periphery region is lower than that of the substrate in a rest region. Immersion liquid supplied onto the photoresist film hardly leaks out, and the bubbles hardly occur in the immersion liquid.