Abstract: There is disclosed a resist top coat composition, comprising at least a polymer that has an amino group or a sulfonamide group at a polymer end and that is represented by the following general formula (1); and a patterning process comprising: at least, a step of forming a photoresist film on a substrate; a step of forming a resist top coat on the photoresist film by using the resist top coat composition; a step of exposing the substrate; and a step of developing the substrate with a developer. There can be provided a resist top coat composition that makes it possible to provide more certainly rectangular and excellent resist patterns when a top coat is formed on a photoresist film; and a patterning process using such a composition.

Abstract: A laser induced thermal imaging method capable of effectively laminating a donor film and an acceptor substrate using a magnetic force; and a fabricating method of an organic light-emitting diode using the same. The laser induced thermal imaging method includes arranging an acceptor substrate, in which a first magnet is formed in one surface thereof, on a substrate stage in a processing chamber; arranging on the acceptor substrate a donor film including a second magnet; laminating the donor film and the acceptor substrate using a magnetic force acting between the first and second magnets; and transferring at least one region of an imaging layer onto the acceptor substrate by scanning a laser on the donor film. The laser induced thermal imaging method improved adhesion between the donor film and the acceptor substrate improves a life span, a yield and a reliability of the organic light-emitting diode.

Abstract: Disclosed are: a composition for forming a resist protection film, which shows less damage to a resist film, can form a good, rectangular resist pattern, and can be used regardless of the structure of a resin used in a resist composition; and a method for forming a resist pattern by using the composition. Specifically, disclosed are: a composition for forming a resist protection film, which comprises (a) an alkali-soluble polymer and (b) an ether-based solvent; and a method for forming a resist pattern by using the composition.

Abstract: An upper layer film forming composition for forming an upper layer film on the surface of a photoresist film includes (A) a resin dissolvable in a developer for the photoresist film and (B) a compound having a sulfonic acid residue group, the composition forming an upper layer film with a receding contact angle to water of 70° or more. The upper layer film forming composition of the present invention can form an upper layer film which has a sufficient transparency and is stably maintained without eluting the components into a medium without being intermixed with a photoresist film, can form a resist pattern with high resolution while effectively suppressing a defect, and can suppress a blob defect.

Abstract: The present invention aims to provide a pattern forming material that is capable of suppressing generation of wrinkles and static electric charge on a substrate in a lamination step in which the pattern forming material is laminated on the substrate as well as capable of forming a fine and precise pattern; a pattern forming apparatus provided with the pattern forming material; and a pattern forming process using the pattern forming material. To this end, the present invention provides a pattern forming material having a support, a photosensitive layer, and a protective film, the photosensitive layer and the protective film being formed in this order on the support, wherein the number of fish-eyes each having an area of 2,000?m2 or more and a maximum height measured from the film surface of 1?m to 7?m residing in the protective film is 50/m2 to 1,000/m2.

Abstract: The present invention provides a resist pattern thickening material which can thicken a resist pattern and form a fine space pattern, exceeding exposure limits of exposure light used during patterning. The resist pattern thickening material contains a resin and a phase transfer catalyst. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.

Abstract: Negative-working imageable elements can be imaged and processed with water to provide lithographic printing plates. These imageable elements have imageable layers that contain a particulate polymeric binder having polyetheramine side chains. Rapid processing speeds are also possible using water and optional mechanical rubbing means for processing the imaged element.

Abstract: The present invention relates to a method of preparing a photochromic film or plate comprising printing a photochromic substance in the unit of an independent spot on a part or the whole of a basic material and forming a protective layer on the basic material, on which the photochromic substance is coated, so as to protect the photochromic substance. According to the present invention, the photochromic substance is printed in the unit of an independent spot so that the printed unit spots are isolated from each other, thereby prolonging the life of the photochromic substance.

Abstract: A negative-working imageable element has an imageable layer and a topcoat layer that contains a composition that will change color upon exposure to imaging infrared radiation. The imageable element can be imaged and developed on-press to provide images with improved contrast for print-out.

Abstract: A polymerizable composition comprising: a polyurethane resin synthesized by using a compound represented by the following formula (I) as one of starting materials; a photopolymerization or thermal polymerization initiator; and an addition-polymerizable compound having an ethylenically unsaturated bond: wherein X represents a tri- or higher valent atom; R1 and R2 each independently represent a single bond or an alkylene group optionally having a substituent, provided that R1 and R2 do not represent a single bond at a same time; A represents a straight chain linking group; and n is an integer of from 1 to 5.

Abstract: A photosensitive film excellent in workability and making it possible, in a normal pressure laminating process, to laminate photosensitive films on the surface of substrate having a metallic surface with a reduced number of air voids generated and in a high product yield, said film comprising a support film (A), a photosensitive resin composition-containing photosensitive resin layer (B) formed on said support (A) and a protecting film (C) further stuck on said layer (B), wherein the number of fish eyes having a diameter of at least 80 ?m included in the protecting film (C) does not exceed 5 fish eyes/m2.

Abstract: A photosensitive film excellent in workability and making it possible, in a normal pressure laminating process, to laminate photosensitive films on the surface of substrate having a metallic surface with a reduced number of air voids generated and in a high product yield, said film comprising a support film (A), a photosensitive resin composition-containing photosensitive resin layer (B) formed on said support (A) and a protecting film (C) further stuck on said layer (B), wherein the number of fish eyes having a diameter of at least 80 ?m included in the protecting film (C) does not exceed 5 fish eyes/m2.

Abstract: A polymer, a top coating layer, a top coating composition and an immersion lithography process using the same are disclosed. The top coating layer polymer may include a deuterated carboxyl group having a desired acidity such that the top coating layer polymer may be insoluble with water and a photoresist, and soluble in a developer. The polymer may be included in a top coating layer and a top coating composition.

Abstract: According to an aspect of the invention, there is provided a pattern forming method including forming a lower layer organic film on a substrate, forming an upper layer resist film containing an inorganic element on the lower layer organic film, exposing a pattern on the upper layer resist film and performing development processing to form an opening in the upper layer resist film, supplying a coating forming agent to the upper layer resist film having the opening formed therein to embed and form a coating film in the opening of the upper layer resist film, thermally contracting the coating film to narrow the opening of the upper layer resist film, removing the coating film by dry etching processing and subsequently selectively removing the lower layer organic film with the upper layer resist film being used as a mask, thereby collectively processing the coating film and the lower layer organic film.

Abstract: A method for forming a photoresist pattern involves the steps of: depositing a photoresist film on a substrate, the photoresist film containing an acid-generating agent capable of generating an acid upon exposure to light; overlaying an antireflective film over the photoresist film, the antireflective film containing a fluorine-based acidic compound; selectively exposing the photoresist; and developing the photoresist. The novel method is characterized in that the acid-generating agent and the fluorine-based acidic compound are selected so that the acid that the acid-generating agent generates in the photoresist film upon exposure to light has a higher acidity than the fluorine-based acidic compound in the antireflective film.

Abstract: A method is provided for forming a stable thin film on a substrate. The method includes depositing a co-polymer composition having a first component and a second component onto a substrate to form a stable film having a first thickness. The first component has first dielectric properties not enabling the first component by itself to produce the stable film having the first thickness. However, the second component has second dielectric properties which impart stability to the film at the first thickness. In a preferred embodiment, the second component includes a leaving group, and the method further includes first thermal processing the film to cause a solvent but not the leaving group to be removed from the film, after which second thermal processing is performed to at least substantially remove the leaving group from the film. As a result, the film is reduced to a second thickness smaller than the first thickness, and the film remains stable during both the first and the second thermal processing.

Abstract: A mask is described for forming an image on a substrate. The mask may be selectively applied to a radiant energy sensitive material on the substrate. Actinic radiation applied to the composite chemically changes portions of the radiant energy sensitive material not covered by the mask. The mask and portions of the radiant energy sensitive material are removed using a suitable aqueous base developer. The mask is composed of aqueous base soluble or dispersible polymers and light-blocking agents.

Abstract: The present invention provides a resist pattern thickening material and the like which can thicken a resist pattern and form a fine space pattern. The resist pattern thickening material contains: a resin; a crosslinking agent; and at least one type selected from cationic surfactants, amphoteric surfactants, and non-ionic surfactants selected from alkoxylate surfactants, fatty acid ester surfactants, amide surfactants, alcohol surfactants, and ethylene diamine surfactants. In a process for forming a resist pattern of the present invention, after a resist pattern is formed, the thickening material is applied onto a surface of the pattern. A process for manufacturing a semiconductor device of the present invention includes: after forming a resist pattern on an underlying layer, applying the thickening material on a surface of the pattern so as to thicken the pattern; and a step of patterning the underlying layer by etching by using the pattern.

Abstract: A singe- or multilayer lithographic printing plate precursor comprises on a substrate a radiation-sensitive coating that comprises a copolymer soluble or dispersible in aqueous alkaline solution and comprising (meth)acryl recurring units, imide recurring units, and amide recurring units derived from corresponding ethylenically unsaturated polymerizable monomers; the copolymer provides increased chemical resistance for the lithographic printing plate precursors which can be negatively or positively working.

Abstract: The present invention can provide a resist cover film-forming material which is suitably used for a resist cover film for liquid immersion exposure and can transmit ArF excimer laser lights and provide a process for forming a resist pattern using the resist cover film-forming material. The resist cover film-forming material contains a resin having an alicyclic skeleton at any of the main chain and the side chains; it is nonphotosensitive and is used in forming a resist cover film that covers a resist film during liquid immersion exposure. The process for forming of a resist pattern includes forming a resist film on a surface of a workpiece to be processed, forming a resist cover film on the resist film using the resist cover film-forming material of the present invention, irradiating the resist film with exposure light through the resist cover film by liquid immersion exposure, and developing the resist film.

Abstract: The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for immersion lithography. The inventive composition is soluble in aqueous base solutions and insoluble in water. The inventive composition comprises a polymer having at least one hydrophobic moiety, at least one acidic moiety with a pKa of 1 or less, and at least one aqueous base soluble moiety. The present invention also discloses a method of forming a patterned layer on a substrate by using the inventive composition in lithography.

Abstract: A polymer, a top coating layer, a top coating composition and an immersion lithography process using the same are provided. The polymer used as a top coating layer covering (or formed on) a photoresist may include a specific chemical structure. The top coating composition may include a solvent and a polymer of having the specific chemical structure. The immersion lithography process includes forming a photoresist layer on a wafer, forming a top coating layer on the photoresist layer, immersing the wafer in water, performing an exposure process on the photoresist layer and forming a photoresist pattern by removing the top coating layer and the photoresist layer with a developer.

Abstract: Laser induced thermal imaging (LITI) donor films, and methods of preparing them, having a substrate, a light-to-heat conversion layer, and a pattern-directing layer. The pattern-directing layer can include patterns of self-assembled monolayer regions, hydrophilic and hydrophobic regions, positively or negatively charged regions, or a series of raised or recessed features. It can also be used to generate charge patterns and magnetic patterns. The pattern-directing layer causes patterning of a transfer layer applied to it, resulting in a templated transfer layer. When imaged, the LITI donor film transfers at least a portion of the templated transfer layer to a permanent receptor while maintaining the pattern substantially intact in the transferred portion.

Abstract: A radiation-sensitive medium comprises hydrophilic polymer particles, the particles comprising a thermally softenable hydrophobic polymer, a hydrophilic polymer and a bonding compound capable of chemically bonding to the hydrophobic polymer and to the hydrophilic polymer. The radiation-sensitive medium further may comprise a substance capable of converting radiation into heat. The radiation-sensitive medium is aqueous-ineluable when coated and dried, and becomes hydrophobic under the action of heat. The polymer particles are made by polymerization of at least one hydrophobic monomer and at least one bonding compound in the presence of the hydrophilic polymer. The radiation-sensitive medium may be provided as a coatable composition to be applied to substrates to form a processless radiation-imageable lithographic printing precursor, which may further be provided with an aqueous eluable hydrophilic overcoat.

Abstract: The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing amino group. The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.

Abstract: A method of creating a graded anti-reflective coating (ARC) layer on a thin film is described. The method includes forming the thin film on a substrate, forming an ARC layer on the thin film, and applying a solvent to the ARC layer causing it to swell. A photo-resist layer is formed on the swollen ARC layer. A mixing layer is formed by the diffusion of components from the swollen ARC layer to the photo-resist layer and vice versa. The mixing layer has optical qualities that are distinct from those of either of the ARC layer or the photo-resist layer. The mixing layer forms the graded ARC layer.

Abstract: In a method of effectively miniaturizing a resist pattern, a super fine pattern-forming method of restricting a film thickness of a crosslinked film and also preventing developing defects is provided using a super fine pattern-forming material which contains a solvent composed of a water-soluble resin, a water-soluble crosslinking agent, and water or a mixing solution of water and a water-soluble organic solvent, and an amine compound-containing developing solution. The amine compound-containing developing solution is preferably a primary amine compound such as polyallylamine, monomethanolamine, and monoethanolamine, a secondary amine compound such as dimethylamine, diethylamine, dimethanolamine, and diethanolamine, a tertiary amine compound such as trimethylamine, triethylamine, trimethanolamine, and triethanolamine, or a quartenary amine compound such as hydrated tetramethylamine.

Abstract: The present invention provides a resist pattern thickening material and the like which can thicken a resist pattern and form a fine space pattern. The resist pattern thickening material contains: a resin; a crosslinking agent; and at least one type selected from cationic surfactants, amphoteric surfactants, and non-ionic surfactants selected from alkoxylate surfactants, fatty acid ester surfactants, amide surfactants, alcohol surfactants, and ethylene diamine surfactants. In a process for forming a resist pattern of the present invention, after a resist pattern is formed, the thickening material is applied onto a surface of the pattern. A process for manufacturing a semiconductor device of the present invention includes: after forming a resist pattern on an underlying layer, applying the thickening material on a surface of the pattern so as to thicken the pattern; and a step of patterning the underlying layer by etching by using the pattern.

Abstract: Overcoating layer compositions are provided that are applied above a photoresist composition including for immersion lithography processing as well as non-immersion imaging.

Abstract: The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened e.g., in form of lines and spaces pattern, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.

Abstract: The present invention provides methods for forming images in positive- or negative-tone chemically amplified photoresists. The methods of the present invention rely on the vertical up-diffusion of photoacid generated by patternwise imaging of an underlayer disposed on a substrate and overcoated with a polymer containing acid labile functionality. In accordance with the present invention, the vertical up-diffusion can be the sole mechanism for imaging formation or the methods of the present invention can be used in conjunction with conventional imaging processes.

Abstract: An antireflective film is provided between a resist layer and a silicon oxide layer formed on a surface of a silicon substrate, for exposure of the resist layer in an exposure system having a wavelength of 190 nm to 195 nm and a numerical aperture NA of 0.93 to 1.2. Assuming that the complex refractive indexes of upper and lower layers constituting the antireflective film are N1 (=n1?k1i) and N2 (=n2?k2i), respectively, and the thicknesses of both layers are d1 and d2, when a predetermined combination of values of [n10, k10, d10, n20, k20, d20] is selected, n1, k1, d1, n2, k2, and d2 satisfy the relational expression {(n1?n10)/(n1m?n10)}2+{(k1?k10)/(k1m?k10)}2+{(d1?d10)/(d1m?d10)}2+{(n2?n20)/(n2m?n20)}2+{(k2?k20)/(k2m?k20)}2+{(d2?d20)/(d2m?d20)}2?1.

Abstract: A radiation-sensitive medium comprises hydrophilic polymer particles, the particles comprising a thermally softenable hydrophobic polymer, a hydrophilic polymer and a bonding compound capable of chemically bonding to the hydrophobic polymer and to the hydrophilic polymer. The radiation-sensitive medium further may comprise a substance capable of converting radiation into heat. The radiation-sensitive medium is aqueous-ineluable when coated and dried, and becomes hydrophobic under the action of heat. The polymer particles are made by polymerization of at least one hydrophobic monomer and at least one bonding compound in the presence of the hydrophilic polymer. The radiation-sensitive medium may be provided as a coatable composition to be applied to substrates to form a processless radiation-imageable lithographic printing precursor, which may further be provided with an aqueous eluable hydrophilic overcoat.

Abstract: The present invention provides a method for forming a micropattern, enabling to narrow intervals between resist patterns, in which the narrowing extent of intervals between resist patterns can be increased while maintaining the controllability of resist pattern dimensions and the good resist pattern shape within a wafer face. The present invention relates a method for forming a micropattern comprising: a coating film formation process for applying a coating composition to form a coating film on a substrate having a resist pattern; a first heating treatment process for heat-treating the coating film; a coating film removal process for removing the coating film after the first heating treatment process; and a second heat treatment process for heat-treating the pattern narrowed after the coating film removal process.

Abstract: In the liquid immersion lithography process, by simultaneously preventing deterioration of a resist film and deterioration of an immersion liquid employed during liquid immersion lithography which uses various immersion liquids, including water, resistance to post exposure delay of the resist film can be improved without increasing the number of processes, thereby making it possible to form a high resolution resist pattern using liquid immersion lithography. Using an alkaline soluble polymer, a crosslinking agent, and a solvent capable of dissolving them as at least constituent component, a composition is prepared and a protective film is formed on the surface of the resist film to be used, using the composition.

Abstract: The present invention relates to a resist top coat composition and a patterning process adopting such a material, which resist top coat composition is provided for forming a top coat on a photoresist film so as to protect the photoresist film, in liguid immersion photolithography.

Abstract: The object of the present invention is to provide a resist pattern thickening material, etc. which, when coated over a resist pattern formed of ArF resist material, etc., can efficiently thicken the resist pattern such as lines and spaces pattern, etc. regardless of the composition of ArF resist material, and the like; which can easily control the thickening amount of resist pattern by process condition; and which can easily and efficiently form a fine space pattern beyond the exposure (resolution) limits of light sources of the exposure devices at low cost. The resist pattern thickening material of the present invention comprises a solubilizer which melts the resist pattern at the temperature near its melting point and- a water-soluble element. The process for forming a resist pattern of the present invention comprises forming a resist pattern and coating a resist pattern thickening material of the present invention over the surface of the resist pattern.

Abstract: A resist film made of a chemically amplified resist is formed on a substrate. Subsequently, a barrier film for preventing a component of the resist film from eluting into an immersion liquid or preventing the immersion liquid from permeating into the resist film is formed on the resist film. Thereafter, with an immersion liquid provided on the barrier film, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the barrier film. Then, after removing the barrier film, the resist film having been subjected to the pattern exposure is developed, so as to form a resist pattern made of the resist film.

Abstract: Compositions characterized by the presence of an aqueous base-soluble polymer having aromatic moieties and a refractive index value n of less than 1.5 with respect to a radiation wavelength of 193 nm have been found which are especially useful as top antireflective coatings in 193 nm dry lithographic processes. Polymers with an ethylenic backbone and having fluorine and sulfonic acid moieties have been found to be especially useful. The compositions enable top reflection control at 193 nm while providing ease of use by virtue of their solubility in aqueous alkaline developer solutions.

Abstract: A resist film made of a chemically amplified resist material including a polymer; a photo-acid generator and carbamoyl oxime is formed on a substrate. Subsequently, pattern exposure is performed by selectively irradiating the resist film with exposing light. After the pattern exposure, the resist film is baked, and the baked resist film is developed, so as to form a resist pattern made of the resist film.

Abstract: A topcoat composition. The topcoat composition includes a fluorine-containing polymer and a casting solvent that includes an alcohol.

Abstract: The object of the present invention is to provide an anti-reflective coating composition having excellent coating properties while maintaining performance as an anti-reflective film. An anti-reflective coating composition comprising at least the following components (A), (B), (C), (D), and (E) and a production method for a pattern using the anti-reflective coating composition, (A) perfluoroalkyl•alkylenesulfonic acid represented by the following formula (1): CnF2n+1(CH2CH2)mSO3H (1) (wherein, n represents an integer from 1 to 20, and m represents an integer from 0 to 20); (B) organic amine; (C) water-soluble polymer; (D) perfluoroalkylethyl group containing compound represented by the following formula (2): CkF2k+1CH2CH2—X—Y (2) (wherein, k represents an integer from 1 to 20, x represents a single bond or a divalent linking group, y represents an anionic group or a nonionic group, and this compound has a structure different from that of the component (A)); and (E) water.

Abstract: Provided is a laminated body (1) comprising a substrate (2) to be ground and a support (5), where the substrate (2) is ground to a very small thickness and can then be separated from the support (5) without damaging the substrate (2). One embodiment of the present invention is a laminated body (1) comprising a substrate (2) to be ground, a joining layer (3) in contact with the substrate (2) to be ground, a photothermal conversion layer (4) comprising a light absorbing agent and a heat decomposable resin, and a light transmitting support (5). After grinding the substrate surface which is opposite that in contact with the joining layer (3), the laminated body (1) is irradiated through the light transmitting support (5) and the photothermal conversion layer (4) decomposes to separate the substrate (2) and the light transmitting support (5).

Abstract: A photosensitive lithographic printing plate comprising: a hydrophilic support; and a photosensitive layer containing a polymerization initiator, a chain transfer agent, a compound having an ethylenically unsaturated double bond and a polymer binder having a crosslinkable group in a side chain, wherein the chain transfer agent is a thiol compound represented by the following formula (I): in which R represents an alkyl group which may have a substituent or an aryl group which may have a substituent; and A represents an atomic group necessary for forming a 5-membered or 6-membered hetero ring containing a carbon atom together with the N?C—N linkage, and A may have a substituent.

Abstract: The present invention is directed to phosphorus containing (or “halogen free”) multi-layer flame retardant photoimagable compositions useful as a coverlay material in a flexible electronic circuitry package. These compositions generally contain a top layer and bottom layer adjacent to one another both being photosensitive and comprising phosphorus containing acrylates and phosphorus-containing photo-initiators mixed with a polymer binder. These compositions typically have phosphorus in the top layer in an amount between, and including, any two of the following numbers 2.0, 2.2, 2.4, 2.6, 2.8, 3.0, 3.2, 3.4, 3.6, 3.8, 4.0, 4.2, 4.4, 4.6, 4.8, 5.0, 5.2, 5.4, 5.6, 5.8, 6.0, 6.2, 6.4, 6.6, 6.8, 7.0, 7.2, 7.4, 7.6, 7.8, 8.0, 8.2, 8.4, 8.6, 8.8, 9.0, 9.2, 9.4, 9.6, 9.8, and 10.0 weight percent, and have phosphorus in the bottom layer in an amount between, and including, any two of the following numbers, 0.0, 0.2, 0.4, 0.6, 0.8, 1.0, 1.2, 1.4, 1.6, 1.8, 2.0, 2.2, 2.4, 2.6, 2.8, 3.0, 3.2, 3.4, 3.6, 3.8, and 4.

Abstract: Disclosed is a topcoat composition comprising a polymer having a dissolution rate of at least 1500 ?/second in an aqueous alkaline developer, and at least one solvent. The topcoat composition can be used to coat a photoresist layer on a material layer on a substrate, for example, a semiconductor chip. Also disclosed is a method of forming a pattern in the material layer of the coated substrate.

Abstract: There is provided a novel polyester compound having in its main polymer chain an aliphatic cyclic structure with carboxylic acids or carboxylic acid ester groups as represented by the chemical formula (1), a resist material containing the polyester compound and a patterning method using the resist material.

Abstract: An antireflection film-forming composition having excellent coatability, capable of significantly inhibiting production of fine microbubbles and capable of forming an antireflection film with a sufficiently decreased standing-wave effect, and having excellent solubility in water and alkaline developers is provided. The composition comprises a polymer having at least one polymerization unit with a hydroxyl group-containing organic group on the side chain, preferably a copolymer having at least one recurring unit of the following formula (2) and/or at least one recurring unit of the following formula (3) and at least one recurring unit of the following formula (4), and/or a salt thereof: wherein R1 and R2 represent a hydrogen atom, a fluorine atom, or a monovalent organic group, m is an integer of 1-20, and A represents a divalent coupling means.

Abstract: A thermal acid generator of generating an acid on heating above 100° C. has formula: CF3CH(OCOR)CF2SO3?(R1)4N+ wherein R is alkyl or aryl, R1 is hydrogen, alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or R1 may bond together to form a ring with N. The sulfonic acid generated possesses an ester site within molecule so that less bulky acyl groups to bulky groups may be incorporated therein. The thermal acid generator provides a sufficient acid strength, is less volatile due to a high molecular weight, and ensures film formation. Upon disposal of used resist liquid, it may be converted into low accumulative compounds.

Abstract: The invention provides a printing plate material having high sensitivity, excellent initial printability, excellent stability under room light, i.e., good workability or storage stability under room light, and reduced contamination of a printing press.