Abstract: A method of forming a resist pattern using a resist composition containing a base component (A) which exhibits reduced solubility in an organic solvent under action of an acid and an acid-generator component (B) which generates an acid upon exposure, the base component (A) including a resin component (A1) having a structural unit (a0) derived from a compound represented by general formula (a0-1) shown below and a structural unit (a2) containing a lactone-containing cyclic group or the like (in formula (a0-1), Ra1 represents a monovalent substituent having a polymerizable group, La1 represents O, S or a methylene group, R1 represents a linear or branched hydrocarbon group of 2 to 20 carbon atoms which may have a substituent, or a cyclic hydrocarbon group which may have a hetero atom, and n represents an integer of 0 to 5).

Abstract: A compound represented by formula (I): wherein R1 represents a hydrogen atom, a halogen atom or a C1-C6 alkyl group where a hydrogen atom can be replaced by a halogen atom, L1 represents a C1-C8 fluorinated alkanediyl group, X1 represents *—CO—O—, *—O—CO—, *—O—CO—O— or *—O— where * represents a binding site to L1, and R2 represents a C1-C18 hydrocarbon group in which a methylene group can be replaced by an oxygen atom, a carbonyl group or a sulfonyl group and in which a hydrogen atom can be replaced by a hydroxy group, or in which two hydrogen atoms can be each replaced by an oxygen atom forming one ketal structure together with a C1-C8 alkanediyl group bonded to the oxygen atom and a hydrogen atom in said ketal structure can be replaced by a fluorine atom.

Abstract: In lithography, a composition comprising a novolak resin comprising recurring units of hydroxycoumarin is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO2 substrates.

Abstract: Photoresist overcoat compositions are provided. The compositions comprise: a matrix polymer, an additive polymer a basic quencher and an organic solvent. The additive polymer has a lower surface energy than a surface energy of the matrix polymer, and the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition. The compositions have particular applicability in the semiconductor manufacturing industry for use in negative tone development processes.

Abstract: A method of forming a pattern includes (a) forming a film of an actinic-ray- or radiation-sensitive resin composition, (b) exposing the film to light, and (c) developing the exposed film with a developer comprising an organic solvent to thereby form a negative pattern. The actinic-ray- or radiation-sensitive resin composition includes (A) a resin whose solubility in the developer comprising an organic solvent is lowered when acted on by an acid, which resin contains a repeating unit with any of lactone structures of general formula (1) below, and (B) a compound that when exposed to actinic rays or radiation, generates an acid.

Abstract: The present invention relates to a printing element having at least one polymer layer which has photoimageable constituents and a chemically functionalized polymer to make the polymer layer either more hydrophobic or hydrophilic. In one embodiment, the printing element comprises two adjacent polymer layers on a substrate in which the photoimaged layer comprises a polymer chemically modified with hydrophobic fluoroalkyl side groups to provide differential wetting with hydrophilic inks.

Abstract: Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming a substantially periodic array of a plurality of topographical features including a plurality of etch resistant topographical features and at least one graphoepitaxy feature. The plurality of etch resistant topographical features define a plurality of etch resistant confinement wells and the at least one graphoepitaxy feature defines a graphoepitaxy confinement well that has a different size and/or shape than the etch resistant confinement wells. A block copolymer is deposited into the confinement wells. The block copolymer is phase separated into an etchable phase and an etch resistant phase. The etch resistant topographical features direct the etch resistant phase to form an etch resistant plug in each of the etch resistant confinement wells.

Abstract: 1. A resist composition includes (A1) a resin which includes a structural unit represented by formula (a4), and a structural unit having a sulfonyl group, and the resin has no acid-labile group, (A2) a resin having an acid-labile group, and an acid generator. wherein R3 represents a hydrogen atom or a methyl group, and R4 represents a C1 to C24 saturated hydrocarbon group having a fluorine atom, and a methylene group contained in the saturated hydrocarbon group may be replaced by an oxygen atom or a carbonyl group.

Abstract: A compound represented by the following formula (I), wherein R1 is a hydrogen atom, a halogen atom, a methyl group or a trifluoromethyl group.

Abstract: A compound represented by formula (I): wherein R1 represents a hydrogen atom, a halogen atom, or a C1-C6 alkyl group which may have a halogen atom; R2 and R3 each independently represent a hydrogen atom or a C1-C6 monovalent saturated hydrocarbon group, and R4 represents a C1-C6 monovalent saturated linear hydrocarbon group, a C3-C6 monovalent saturated branched hydrocarbon group, a C5-C12 monovalent alicyclic hydrocarbon group or a C5-C12 monovalent alicyclic hydrocarbon-containing group, or R3 and R4 represent a C2-C6 heterocyclic ring together with an oxygen atom and a carbon atom; A1 represents a single bond, or *-A2-X1-(A3-X2)a— where A2 and A3 each independently represent a C1-C6 alkanediyl group, X1 and X2 each independently represent an oxygen atom, a carbonyloxy group or an oxycarbonyl group, and “a” represents 0 or 1; A4 represents a C1-C6 alkanediyl group; Ad represents a divalent adamantanediyl group.

Abstract: A color filter pattern including a plurality of color filters arranged in a pattern and the manufacturing method thereof are provided. By performing at least one two-stage exposure process to a color filter layer, the plurality of color filters are formed with a sharp profile.

Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid, an acid generator component (B) which generates acid upon exposure, and a nitrogen-containing organic compound component (D), wherein the acid generator component (B) includes an acid generator (B1) containing a compound represented by general formula (b1-1) shown below, and the nitrogen-containing organic compound component (D) includes a compound (D1) represented by general formula (d1) shown below. In the formula, Y0 represents an alkylene group of 1 to 4 carbon atoms which may have a substituent, R0 represents an alkyl group, alkoxy group, halogen atom, halogenated alkyl group, hydroxyl group or oxygen atom (?O), p represents 0 or 1, and Z+ represents an organic cation.

Abstract: A photosensitive resin composition includes (A) a binder resin; (B) a photopolymerizable monomer; (C) a photopolymerization initiator; (D) a colorant; and (E) a solvent. The binder resin includes a first binder resin including structural units represented by Chemical Formulae 1 to 4, wherein the substituents are as defined in the specification, and the first binder resin is present in an amount of about 20 wt % to about 90 wt % based on the total amount of the binder resin. A color filter using the photosensitive resin composition is provided.

Abstract: A positive resist composition is provided comprising a polymer comprising recurring units having a carboxyl or phenolic hydroxyl group substituted with an acid labile group and recurring units of caramel furanone ester, and having a Mw of 1,000-500,000. The resist composition has a satisfactory effect of suppressing acid diffusion and a high resolution, and forms a pattern of good profile and minimal edge roughness after exposure.

Abstract: A salt represented by formula (I): wherein Q1 and Q2 each independently represent a fluorine atom or a C1-C6 perfluoroalkyl group, A1 represents a C1-C30 monovalent organic group, X1 represents a C1-C10 aliphatic hydrocarbon group where a hydrogen atom may be replaced by a hydroxy group, m1 and m2 independently each represent an integer of 1 to 4, and Z+ represents an organic cation.

Abstract: A resist composition including a polymeric compound having a structural unit derived from an acrylate ester containing a lactone-containing cyclic group having a group represented by general formula (a0-r-1) on the side chain and optionally having the hydrogen atom bonded to the carbon atom on the ?-position substituted with a substituent: in formula (a0-r-1), Ra3 and Ra4 each independently represents a hydrogen atom or a non-aromatic hydrocarbon group optionally having a substituent, provided that Ra3 and Ra4 are optionally mutually bonded to form a ring with the carbon atom bonded to Ra3 and the nitrogen atom bonded to Ra4; and * represents a valence bond.

Abstract: Nonpolymeric compounds, compositions, and methods for forming microelectronic structures, and the structures formed therefrom are provided. The nonpolymeric compounds are ring-opened, epoxide-adamantane derivatives that comprise at least two epoxy moieties and at least one adamantyl group, along with at least one chemical modification group, such as a chromophore, bonded to a respective epoxy moiety. Anti-reflective and/or planarization compositions can be formed using these compounds and used in lithographic processes, including fabrication of microelectronic structures.

Abstract: A radiation-sensitive resin composition that provides a resist coating film in a liquid immersion lithography process is provided, the radiation-sensitive resin composition being capable of exhibiting a great dynamic contact angle during exposure, whereby the surface of the resist coating film can exhibit a superior water draining property, and the radiation-sensitive resin composition being capable of leading to a significant decrease in the dynamic contact angle during development, whereby generation of development defects can be inhibited, and further shortening of a time period required for change in a dynamic contact angle is enabled. A radiation-sensitive resin composition including (A) a polymer having a structural unit (I) represented by the following formula (1), and (B) a radiation-sensitive acid generator.

Abstract: Photo-acid generating vinyl polymerizable monomers (PAG monomers) were prepared comprising sulfonate ester groups of N-hydroxide imides. The photo-acid generating portion of the PAG monomer is linked to a polymerizable portion of the monomer by an amide linking group. Photo-acid generating polymers (PAG polymers) of the PAG monomers show high sensitivity to extreme ultraviolet radiation (13.5 nm) and much less sensitivity to far ultraviolet wavelengths (193 nm, 248 nm). The PAG polymers also exhibit thermal and chemical amplification properties useful for forming high resolution positive tone or negative tone lithographic resist patterns.

Abstract: A resist composition includes a high-molecular weight compound having a constituent unit (a0) represented by a general formula (a0-1), an acid generator component (B) which generates an acid upon exposure, and a photodegradable base (D1) which is decomposed upon exposure to lose acid diffusion controlling properties, and a mixing ratio of the component (D1) to the component (B) is 0.5 or more in terms of a molar ratio represented by (D1)/(B). In the formula (a0-1), R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Ya01 represents a single bond or a divalent linking group; X01 represents a sulfur atom or an oxygen atom; and Ra01 represents an optionally substituted cyclic group, an optionally substituted chain alkyl group, or an optionally substituted chain alkenyl group.

Abstract: A photoacid generator has the formula (I): wherein R1, R2, R3, L1, L2, L3 X, Z+, a, b, c, d, p, q, and r, are defined herein. A photoresist comprises the photoacid generator, and a coated article comprises the photoresist. The photoresist can be used to form an electronic device.

Abstract: A photo or heat-sensitive polymer comprising recurring units having polymerizable anion-containing sulfonium salt and phenolic hydroxyl-containing recurring units is useful as a base resin to formulate a resist composition having high sensitivity, high resolution and low LWR.

Abstract: A positive resist composition contains: (A) a polymer compound having a structure where a hydrogen atom of a phenolic hydroxyl group is replaced by an acid labile group represented by the following formula (I): wherein R represents a monovalent organic group; A represents a group having a polycyclic hydrocarbon ring structure or a group having a polycyclic heterocyclic structure; and * represents a bonding position to an oxygen atom of the phenolic hydroxyl group.

Abstract: Provided is a method for producing a polymer compound that has very low contents of impurities such as metal components and exhibits excellent storage stability. The production method gives such a polymer compound. The polymer compound is incorporated into a photoresist resin composition. The method for producing a polymer compound includes the step of filtering a resin solution containing a polymer compound through a filter. The filter is approximately devoid of strongly acidic cation-exchange groups and develops a positive zeta potential. The polymer compound includes a monomer unit (a) and a monomer unit (b). The monomer unit (a) includes at least one monomer units represented by Formulae (a1) to (a3). The monomer unit (b) contains a group capable of releasing a moiety thereof by the action of an acid to develop solubility in an alkali.

Abstract: The pattern forming method of the present invention includes (i) forming a film using an actinic ray-sensitive or radiation-sensitive resin composition which contains a resin (A) which has a repeating unit including a group capable of generating a polar group by being decomposed due to an action of an acid and a repeating unit including a carboxyl group, a compound (B) which generates an acid according to irradiation with actinic rays or radiation, and a solvent (C); (ii) exposing the film using a KrF excimer laser, extreme ultraviolet rays, or an electron beam; and (iii) forming a negative tonetone pattern by developing the exposed film using a developer which includes an organic solvent.

Abstract: A resist composition comprising a polymer comprising recurring units (a) of formula (1) and having a Mw of 1,000-500,000 as base resin is provided. R1 is H or methyl, X is a single bond or —C(?O)—O—R5—, R2 is a single bond or C1-C4 alkylene, R3 is C2-C8 alkylene, R4 is an acid labile group, R5 is a single bond or C1-C4 alkylene, and 0<a?1.0. The composition is of dual-tone type in that an intermediate dose region of resist film is dissolved in a developer, but unexposed and over-exposed regions of resist film are insoluble.

Abstract: A negative resist composition comprising a polymer comprising recurring units (a) of formula (1) and having a Mw of 1,000-500,000 as base resin is provided. R1 is H or methyl, X is a single bond or —C(?O)—O—R4—, R2 is a single bond or C1-C4 alkylene, R3 is C2-C8 alkylene, R4 is a single bond or C1-C4 alkylene, and 0<a?1.0. The composition exhibits a high resolution due to controlled acid diffusion and forms a resist film which is unsusceptible to swell in the developer and hence to pattern collapse.

Abstract: Disclosed herein is a composition of matter having a general structure chosen from (I), (II), (III) or (IV); at least one photo acid generator; at least one crosslinker; and at least one solvent; wherein X and Y are the same or different, wherein at least one of X and Y comprises an acid labile group, wherein R1 is a saturated or unsaturated group having from 1-4 carbon atoms, R2 is chosen from hydrogen or a saturated or unsaturated group having from 1-4 carbon atoms, R3 is a saturated or unsaturated group having from 1-4 carbon atoms, and R4 is a saturated or unsaturated group having from 1-4 carbon atoms.

Abstract: An object of the present invention is to provide a composition enabling to form a topcoat layer capable of preventing outgassing and of keeping deep UV light from impairing pattern shape in a lithographic process with extreme UV light. The object can be achieved by a composition of the invention for forming a topcoat layer. The composition contains a water-soluble polymer comprising hydrophilic groups and deep-UV absorbing groups absorbing light of 170 to 300 nm, and an aqueous solvent. The solvent comprises 70 weight % or more of water. The composition is cast on a resist layer and heated to harden, and thereafter the resist layer is subjected to exposure by use of extreme UV light and then developed to form a pattern.

Abstract: The present invention relates to a photosensitive composition including an acrylate-based compound having an adamantyl structure. It is possible to manufacture an organic thin film that is easily stripped without decreasing the strength of the thin film by using the photosensitive composition.

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin containing a repeating unit represented by the specific formula (1) and a repeating unit represented by the specific formula (A); a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition; a pattern forming method comprising (i) a step of forming a film from the actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using a developer to form a pattern; a method for manufacturing an electronic device, comprising the pattern forming method, and an electronic device manufactured by the manufacturing method of an electronic device.

Abstract: A fluorinated photopolymer composition is disclosed having a branched copolymer provided in a fluorinated solvent. The copolymer includes a branching unit, a first repeating unit having a fluorine-containing group, and a second repeating unit having a solubility-altering reactive group. The branched fluorinated photopolymer composition is particularly suited for the fabrication of organic electronic and bioelectronic devices, or other devices having sensitive active organic materials.

Abstract: A photosensitive resin composition, a color filter and a method for manufacturing the same, and a liquid crystal display apparatus are provided. The photosensitive resin composition includes a pigment, an alkali-soluble resin, a compound containing an ethylenically unsaturated group, a photoinitiator, and an organic solvent. The photosensitive resin composition has the advantages of high contrast, low post-baking color difference, and good linearity of high precision pattern.

Abstract: A photoresist film containing a sulfonium or iodonium salt of carboxylic acid having an amino group has a high dissolution contrast and offers improved resolution, wide focus margin and minimal LWR when used as a positive resist film adapted for alkaline development and a negative resist film adapted for organic solvent development.

Abstract: A pattern is formed in a polymeric layer comprising a reactive composition that comprises: (a) a polymer comprising pendant—arylene-X—C(?O)—O— t-alkyl groups that comprise a blocking group that is cleavable to provide pendant—arylene-XH groups, (b) a compound that provides a cleaving acid upon exposure to radiation having a ?max of 150 nm and to 450 nm, which cleaving acid has a pKa of 2 or less as measured in water, and (c) optionally, a photosensitizer. The polymeric layer is imagewise exposed to suitable radiation to provide non-exposed regions and exposed regions comprising a de-blocked and crosslinked polymer with pendant—arylene-XH groups. The exposed regions are contacted with electroless seed metal ions in the de-blocked and crosslinked polymer. After reduction, the corresponding electroless seed metal nuclei are electrolessly plated using a suitable metal that is the same as or different from the corresponding electroless seed metal nuclei.

Abstract: The present invention relates to a negative-type photoresist composition for thick film, comprising: (A) 20 to 50 wt % of an alkali-soluble resin which is polymerized from a plurality of kinds of monomers, wherein the monomers includes compounds represented by formulas (1A) and (1B), and based on the weight ratio of the monomers to the alkali-soluble resin, the sum of the formula (1A) compound and the formula (1B) compound are 20 to 60%, and X of the formula (1A) and (1B) may be independently H, methyl or ethyl. (B) 10 to 30 wt % of crosslinker which can be a bisphenol fluorene derivative monomer having at least one ethylenically unsaturated double bond; (C) 5 to 15 wt % of photo initiator; and (D) residual solvent. The present invention also relates to use of the above-mentioned negative-type photoresist compound for thick film.

Abstract: Provided is a method of forming a pattern, including (a) forming a film comprising an actinic-ray- or radiation-sensitive resin composition comprising a resin (P) containing a repeating unit (P1) with a cyclic carbonic acid ester structure and any of repeating units (P2) of general formula (P2-1) below, and a compound (B) that when exposed to actinic rays or radiation, generates an acid, (b) exposing the film to actinic rays or radiation, and (c) developing the exposed film with a developer comprising an organic solvent to thereby obtain a negative pattern.

Abstract: A photosensitive resin composition includes (A) a photopolymerization initiator including a compound represented by the following Chemical Formula 1, wherein in Chemical Formula 1, each substituent is the same as defined in the detailed description, (B) a binder resin, (C) a photopolymerizable monomer, (D) a colorant, and (E) a solvent, and a light blocking layer and liquid crystal display (LCD) using the same.

Abstract: A photosensitive resin composition includes (A) a cardo-based resin including a repeating unit represented by the following Chemical Formula 1; (B) a reactive unsaturated compound; (C) a pigment; (D) an initiator; and (E) a solvent. A light blocking layer can be made using the same. In the above Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: There is provided a pattern forming method including: (a) a process of forming a film by resin (P) having a repeating unit (a) having a cyclic structure and a partial structure represented by the following Formula (I), (II-1) or (II-2), and a repeating unit (b) having a group which decomposes by the action of an acid to generates a polar group, and an actinic ray-sensitive or radiation-sensitive resin composition containing compound (B) which generates acid upon irradiation with an actinic ray or radiation; (b) a process of exposing the film; and (c) a process of forming a negative-type pattern by performing development using a developer including an organic solvent, an actinic ray-sensitive or radiation-sensitive resin composition used therefor, a resist film, a method of manufacturing an electronic device, and an electronic device.

Abstract: Provided is a method of forming a pattern, including forming a film comprising an actinic-ray- or radiation-sensitive resin composition comprising, resin (A) comprising any of repeating units of general formula (I) below, which resin when acted on by an acid, decreases its solubility in a developer comprising an organic solvent, and a compound (B) expressed by any of general formulae (B-1) to (B-3) below, which compound when exposed to actinic rays or radiation, generates an acid, exposing the film to actinic rays or radiation, and developing the exposed film with a developer comprising an organic solvent to thereby obtain a negative pattern.

Abstract: A photosensitive resin composition for a color filter includes (A) an acrylic-based binder resin including a structural unit represented by the following Chemical Formula 1, wherein the definitions of R1, R2, R3 and R4 are the same as set forth in specification; (B) an acrylic-based photopolymerizable monomer; (C) a photopolymerization initiator; (D) a colorant; and (E) a solvent.

Abstract: Provided is a copolymer for lithography containing a monomer containing an acid leaving group and a monomer not containing an acid leaving group, in which N(v1)/Nave is from 1.01 to 1.09 and all of N(v2)/Nave, N(v3)/Nave, and N(v4)/Nave are from 0.95 to 1.05 when, among five fractions obtained by dividing an eluate providing a peak according to the copolymer in an elution curve obtained by GPC in order of elution so as to have an equal volume, ratios of monomer units containing an acid leaving group among the total monomer units constituting a copolymer included in the respective fractions from the first which is eluted earliest to the fourth are denoted as N(v1) mol % to N(v4) mol %, respectively, and the ratio of the monomer unit containing an acid leaving group among the total monomer units constituting a copolymer included in the sum of the five fractions is denoted as Nave mol %.

Abstract: Negative-working lithographic printing plate precursors have improved bakeability and good shelf life and can be imaged using either UV or infrared radiation. These precursors have a negative-working imageable layer that has a unique polymeric binder comprising a polymeric backbone and further comprising at least (a) and (b) pendant groups distributed in random order along the polymeric backbone. The (a) pendant groups are ethylenically unsaturated polymerizable groups, and the (b) pendant groups are defined by Structures (I), (II), and (III) described in the disclosure.

Abstract: Polymer films comprising crosslinked random copolymers and methods for making the films are provided. Also provided are polymer films comprising random copolymers that are covalently linked to an underlying substrate. The polymer films can be incorporated into structures in which the films are employed as surface-modifying layers for domain-forming block copolymers and the structures can be used for pattern transfer applications via block copolymer lithography. The crosslinks between the random copolymer chains in the polymer films or the links between the random copolymer chains and the substrate surface are characterized in that they can be cleaved under relatively mild conditions.

Abstract: An undercoat agent usable in phase separation of a layer formed on a substrate, the layer containing a block copolymer having a plurality of polymers bonded, the undercoat agent including a resin component, and 20 mol % to 80 mol % of all the structural units of the resin component being a structural unit derived from an aromatic ring-containing monomer; and a method of forming a pattern of a layer containing a block copolymer, the method including: step (1) coating the undercoat agent on a substrate (1), thereby forming a layer (2) composed of the undercoat agent, step (2) forming a layer (3) containing a block copolymer having a plurality of polymers bonded on the surface of the layer (2) composed of the undercoat agent, and subjecting the layer (3) containing the block copolymer to phase separation, and step (3) selectively removing a phase (3a) of at least one polymer of the plurality of copolymers constituting the block copolymer from the layer (3) containing the block copolymer.

Abstract: The present invention relates to a polymer compound including a dye, and a curable resin composition including the same. The polymer compound including the dye according to the present invention may exhibit characteristics such as excellent heat resistance, solubility, coating uniformity, chemical resistance and the like by introducing a single molecule type dye into a side chain of a polymer binder to be modified into a polymer form and applying the modified polymer to a curable composition.

Abstract: A radiation-sensitive resin composition includes (A) a block copolymer, and (B) an acid-generating agent. The block copolymer (A) includes a polymer block (I), a polymer block (II), and a moiety contained in the polymer block (I), the polymer block (2), or both thereof. The polymer block (I) includes an acid-dissociable group. The polymer block (II) includes an alkali-dissociable group. The moiety provides water repellency.

Abstract: Provided are chemically amplified resist compositions that include acid-labile sulfonate-ester photoresist polymers that are developable in an organic solvent. The chemically amplified resists produce high resolution positive tone development (PTD) and negative tone development (NTD) images depending on the selection of organic development solvent. Furthermore, the dissolution contrast of the traditional chemically amplified resists may be optimized for dual tone imaging through the addition of a photoresist polymer comprising an acid-labile sulfonate-ester moiety.

Abstract: A carboxylic acid sulfonium salt having formula (1) is provided wherein R0 is hydrogen or a monovalent hydrocarbon group, R01 and R02 are hydrogen or a monovalent hydrocarbon group, at least one of R0, R01, and R02 has a cyclic structure, L is a single bond or forms an ester, sulfonate, carbonate or carbamate bond with the vicinal oxygen atom, R2, R3 and R4 are monovalent hydrocarbon groups. The sulfonium salt functions as a quencher in a resist composition, enabling to form a pattern of good profile with minimal LWR, rectangularity, and high resolution.