Abstract: Acid generators comprising a carbocyclic aryl or heteroaromatic group substituted with at least one acetate moiety are provided. These acid generators are particularly useful as a photoresist composition component.

Abstract: The present invention relates to a radiation-sensitive resin composition that contains: a compound that has a structure represented by the following formula (1); a first polymer that includes a fluorine atom; and a solvent. In the following formula (1), X represents a carbonyl group, a sulfonyl group or a single bond. Y+ represents a monovalent radiation-degradable onium cation. The first polymer preferably has at least one selected from the group consisting of a structural unit represented by the following formula (2a) and a structural unit represented by the following formula (2b). The first polymer preferably includes an alkali-labile group. The first polymer preferably includes an acid-labile group. It is preferred that a radiation-sensitive acid generator is further contained.

Abstract: One or more techniques or systems for controlling a profile for photo resist (PR) are provided herein. In some embodiments, a first shield layer is formed on a first PR layer and a second PR layer is formed on the first shield layer. A first window is formed within the second PR layer during a first exposure with a mask. A second window is formed within the first shield layer based on the first window. A third window is formed within the first PR layer during a second exposure without a mask. Because, the third window is formed while the first shield layer and the second PR layer are on the first PR layer, a profile associated with the first PR layer is controlled. Contamination during ion bombardment is mitigated due to the controlled profile.

Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Abstract: A pattern is formed by coating a first resist composition comprising a resin comprising recurring units having an acid labile group so that it may turn insoluble in organic solvent upon elimination of the acid labile group, a photoacid generator, and a first organic solvent, onto a processable substrate, prebaking, exposing, PEB, and developing in an organic solvent developer to form a first negative pattern; heating the negative pattern to render it resistant to a second organic solvent used in a second resist composition; coating the second resist composition, prebaking, exposing, PEB, and developing in an organic solvent developer to form a second negative pattern. The first and second negative patterns are simultaneously formed.

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having a repeating unit (A) represented by the specific formula (I) capable of generating an acid on the side chain of the resin upon irradiation with an actinic ray or radiation, and a resist film formed with the actinic ray-sensitive or radiation-sensitive resin composition, and a pattern forming method comprising: exposing the resist film, and developing the exposed resist film, and a method for manufacturing a semiconductor device, containing the pattern forming method, and a semiconductor device manufactured by the manufacturing method of the semiconductor device.

Abstract: A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block, a cleaning/drying processing block, and an interface block. An exposure device is arranged adjacent to the interface block in the substrate processing apparatus. The exposure device subjects a substrate to exposure processing by means of an immersion method. In the edge cleaning unit in the cleaning/drying processing block, a brush abuts against an end of the rotating substrate, so that the edge of the substrate before the exposure processing is cleaned. At this time, the position where the substrate is cleaned is corrected.

Abstract: Provided are chemically amplified resist compositions that include acid-labile sulfonate-ester photoresist polymers that are developable in an organic solvent. The chemically amplified resists produce high resolution positive tone development (PTD) and negative tone development (NTD) images depending on the selection of organic development solvent. Furthermore, the dissolution contrast of the traditional chemically amplified resists may be optimized for dual tone imaging through the addition of a photoresist polymer comprising an acid-labile sulfonate-ester moiety.

Abstract: A carboxylic acid sulfonium salt having formula (1) is provided wherein R0 is hydrogen or a monovalent hydrocarbon group, R01 and R02 are hydrogen or a monovalent hydrocarbon group, at least one of R0, R01, and R02 has a cyclic structure, L is a single bond or forms an ester, sulfonate, carbonate or carbamate bond with the vicinal oxygen atom, R2, R3 and R4 are monovalent hydrocarbon groups. The sulfonium salt functions as a quencher in a resist composition, enabling to form a pattern of good profile with minimal LWR, rectangularity, and high resolution.

Abstract: A photoresist composition comprising: a resin which has an acid-labile group; an acid generator; a compound which has a sulfide bond and a mercapto group; and a solvent.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes; a compound (A) which generates an acid by irradiation with actinic rays or radiation, wherein the acid is linked with a group represented by the following general formula (M) through covalent bonding. In the formula, Y1 and Y2 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group, an alkynyl group, an aryl group, or an acyl group. Z represents a hydrogen atom or a substituent.

Abstract: A lithographic material stack including a metal-compound hard mask layer is provided. The lithographic material stack includes a lower organic planarizing layer (OPL), a dielectric hard mask layer, and the metal-compound hard mask layer, an upper OPL, an optional anti-reflective coating (ARC) layer, and a photoresist layer. The metal-compound hard mask layer does not attenuate optical signals from lithographic alignment marks in underlying material layers, and can facilitate alignment between different levels in semiconductor manufacturing.

Abstract: A thiosulfate polymer composition includes an electron-accepting photosensitizer component, either as a separate compound or as an attachment to the thiosulfate polymer. The thiosulfate polymer composition can be applied to various articles, or used to form a predetermined polymeric pattern after photothermal reaction to form crosslinked disulfide bonds, removing non-crosslinked polymer, and reaction with a disulfide-reactive material. Such thiosulfate polymer compositions can also be used to sequestering metals.

Abstract: A method of producing a polymeric compound containing a structural unit that decomposes upon exposure to generate an acid, the method including: synthesizing a precursor polymer by polymerizing a water-soluble monomer having an anionic group, washing the precursor polymer with water, and subsequently subjecting the precursor polymer to a salt exchange with an organic cation. Also, a polymeric compound produced using the method of producing a polymeric compound, and a method of forming a resist pattern using the resist composition.

Abstract: The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions.

Abstract: Embodiments in accordance with the present invention encompass negative-tone, aqueous base developable, self-imagable polymer compositions useful for forming films that can be patterned to create structures for microelectronic devices, microelectronic packaging, microelectromechanical systems, optoelectronic devices and displays.

Abstract: There is provided a pattern forming method comprising (i) a step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition; (ii) a step of exposing the film; and (iii) a step of performing development by using a developer containing an organic solvent to form a negative pattern, wherein the actinic ray-sensitive or radiation-sensitive resin composition contains (A) a resin capable of increasing the polarity by an action of an acid to decrease the solubility in a developer containing an organic solvent, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a solvent, and (D) a resin having a repeating unit having a fluorine atom and not having a CF3 partial structure.

Abstract: An acid diffusion control agent includes a compound represented by a formula (1), a compound represented by a formula (2) or both thereof. R1 represents a hydrocarbon group comprising a monovalent alicyclic structure, or the like. R2 and R3 each independently represent a monovalent hydrocarbon group, or the like. R4 and R5 each independently represent a monovalent hydrocarbon group, or the like. R6 and R7 each independently represent a monovalent hydrocarbon group, or the like. R8 represents a monocyclic heterocyclic group together with the ester group and with the carbon atom. n is an integer of 1 to 6. R9 represents a monovalent hydrocarbon group, or the like. R10 represents a monovalent hydrocarbon group having 1 to 10 carbon atoms. R11 and R12 each independently represent a monovalent hydrocarbon group, or the like. R13 and R14 each independently represent a monovalent hydrocarbon group, or the like.

Abstract: A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.

Abstract: Disclosed herein are various amine treated maleic anhydride containing polymers and compositions thereof, which are useful for forming self-imageable films. In some embodiments, such polymers encompass norbornene-type repeating units and maleic anhydride-type repeating units where at least some of such maleic anhydride-type repeating units are either ring-opened or have been transformed into maleimide repeat units. The films formed from such copolymer compositions provide self imageable, low-k, thermally stable layers for use in microelectronic and optoelectronic devices.

Abstract: Disclosed herein are various amine treated maleic anhydride containing polymers and compositions thereof, which are useful for forming self-imageable films. In some embodiments, such polymers encompass norbornene-type repeating units containing pendent silyl groups and maleic anhydride-type repeating units where at least some of such maleic anhydride-type repeating units are either ring-opened or have been transformed into maleimide repeat units. The films formed from such copolymer compositions provide self imageable, low-k, thermally stable layers for use in microelectronic and optoelectronic devices.

Abstract: To provide a resist matter improving material containing C4-11 linear alkanediol, and water.

Abstract: A photosensitive resin composition includes (a) a compound polymerizable in the presence of an acid, and (b) a photoacid generating agent including an onium salt having a cationic part structure represented by formula (b1) below and an anionic part structure represented by formula (b2) below, wherein the component (b) absorbs 50% or more of the amount of 365 nm wavelength light absorbed by the photosensitive resin composition,

Abstract: A method for forming a fine pattern, including forming a resist film by applying, on a substrate, a resist composition containing a base material having a solubility, in a developer liquid including an organic solvent, that decreases according to an action of an acid, a compound which generates an acid upon irradiation, and an organic solvent; exposing the resist film; forming a resist pattern using the developer liquid; applying, on the resist pattern, a coating agent for pattern fining including a resin and an organic solvent; and heating the resist pattern on which a coating film is formed.

Abstract: A method of forming a layered substrate comprising a self-assembled material is provided. The method includes forming a first layer of material on a substrate, forming a layer of a radiation sensitive material on the first layer of material, imaging the layer of the radiation sensitive material with patterned light, heating the layer of the radiation sensitive material to a temperature at or above the cross-linking reaction temperature, developing the imaged layer, and forming the block copolymer pattern. The radiation sensitive material comprises at least one photo-sensitive component selected from (a) a photo-decomposable cross-linking agent, (b) a photo-base generator, or (c) a photo-decomposable base; and a cross-linkable polymer, wherein imaging by the patterned light provides a pattern defined by a first region having substantial portions of a decomposed photo-sensitive component surrounded by regions having substantial portions of intact photo-sensitive component.

Abstract: Provided are photoresist developer compositions that include a mixture of organic solvents. Also provided are methods of forming photolithographic patterns using negative tone development, coated substrates and electronic devices formed by the methods. The methods find particular applicability in the manufacture of electronic devices.

Abstract: A photolithography method, including the steps of: S1) depositing, on the upper surface of a wafer, a chemically-amplified resist; S2) exposing the resist to a sensitizing radiation through a mask, to generate acid compounds in the exposed regions; S3) heating the resist, to have the acid compounds react with dissolution-inhibiting groups; and S5) developing the resist; and including, after step S3, a step of neutralization, S4, of the acid compounds which have not reacted at step S3.

Abstract: Disclosed herein is a photoresist composition comprising a graft block copolymer; a solvent and a photoacid generator; where the graft block copolymer comprises a first block polymer; the first block polymer comprising a backbone polymer and a first graft polymer; where the first graft polymer comprises a surface energy reducing moiety that comprises a halocarbon moiety or a silicon containing moiety; and a second block polymer; the second block polymer being covalently bonded to the first block; wherein the second block comprises the backbone polymer and a second graft polymer; where the second graft polymer comprises a functional group that is operative to undergo deprotection and alter the solubility of the graft block copolymer; where the graft block copolymer has a bottle brush topology.

Abstract: A system and process of an extreme ultraviolet lithography (EUVL) is disclosed. An EUVL process includes receiving a mask pair having a same pattern. The mask pair includes an extreme ultraviolet (EUV) mask and a low EUV reflectivity mask. A first exposure process is performed by using the EUV mask to expose a substrate. A second exposure process is performed by using the low EUV reflectivity mask to expose the same substrate. The first exposure process is conducted according to a first exposure dose matrix and the second exposure process is conducted according to a second exposure dose matrix.

Abstract: A chemical amplification resist composition according to the present invention includes (A) a compound including a triarylsulfonium cation having one or more fluorine atoms and capable of generating an acid with a volume of 240 ?3 or higher by irradiation of active rays or radiation; and (B) a compound including a phenolic hydroxyl group.

Abstract: A method of forming a polymer nanofiber-metal nanoparticle composite pattern includes forming on a substrate a polymer nanofiber layer comprising polymer nanofibers made from polymers including a heteroaryl group; selectively exposing to UV-ozone a part of the polymer nanofiber layer through an aperture of a mask; selectively removing a part of the polymer nanofiber layer which was not exposed to UV-ozone from the polymer nanofiber layer to form a polymer nanofiber layer pattern; depositing a metal precursor on the polymer nanofiber layer pattern; and reducing the metal precursor into a metal.

Abstract: A compound represented by formula (I): wherein R1 represents a hydrogen atom, a halogen atom, or a C1-C6 alkyl group which may have a halogen atom; R2 and R3 each independently represent a hydrogen atom or a C1-C6 monovalent saturated hydrocarbon group, and R4 represents a C1-C6 monovalent saturated linear hydrocarbon group, a C3-C6 monovalent saturated branched hydrocarbon group, a C5-C12 monovalent alicyclic hydrocarbon group or a C5-C12 monovalent alicyclic hydrocarbon-containing group, or R3 and R4 represent a C2-C6 heterocyclic ring together with an oxygen atom and a carbon atom; A1 represents a single bond, or *-A2-X1-(A3-X2)a— where A2 and A3 each independently represent a C1-C6 alkanediyl group, X1 and X2 each independently represent an oxygen atom, a carbonyloxy group or an oxycarbonyl group, and “a” represents 0 or 1; A4 represents a C1-C6 alkanediyl group; Ad represents a divalent adamantanediyl group.

Abstract: [Object] To provide a negative-working photosensitive siloxane composition developable inorganically, and also to provide a cured film-manufacturing method employing that. [Means] The present invention provides a negative-working photosensitive siloxane composition comprising a polysiloxane, a silicon-containing compound having a pKa of 2.0 to 15.7, a photo-polymerization initiator, and a solvent. This composition is coat on a substrate, exposed to light, developed with an inorganic developer, and heated, so that a cured film can be obtained.

Abstract: Oxime ester compounds of the formula I, II, III, IV or V, wherein Z is for example (formula A); Z1 for is NO2, unsubstituted or substituted C7-C20aroyl or unsubstituted or substituted C4-C20heteroaroyl; provided that at least one Z1 is other than NO2; Z2 is for example unsubstituted or substituted C7-C20aroyl; R1, R2, R3, R4, R5 and R6 for example are hydrogen, halogen, or unsubstituted or substituted C1-C20alkyl, unsubstituted or substituted C6-C20aryl, or unsubstituted or substituted C4-C20heteroaryl; R9, R10, R11, R12 and R13 for example are hydrogen, halogen, OR16, unsubstituted or substituted C1-C20alkyl; provided that R9 and R13 are neither hydrogen nor fluorine; R14 is for example unsubstituted or substituted C6-C20aryl or C3-C20heteroaryl Q is for example C6-C20arylene or C3-C20heteroarylene; Q1 is —C1-C20alkylene-CO—; Q2 is naphthoylene; Q3 is for example phenylene; L is for example O-alkylene-O—; R15 is for example hydrogen or C1-C20alkyl; R20 is for example hydrogen, or unsubstituted or substituted

Abstract: Compounds of formula (I), (II), and (III), wherein R1, R2, R?2 and R??2 for example are C1-C20alkyl, provided that at least one of R1, R2, R?2 and R??2 carries a specified substituent; R3, R4, and R5 for example independently of one another are hydrogen or a defined substituent provided that at least one of R3, R4 or R5 is other than hydrogen or C1-C20alkyl; R6, R7, R8, R?7, RV, R?8, R?6, R?7, R??6 and R??7 for example independently of one another have one of the meanings as given for R3, R4, and R5; and R9 for example is C1-C20alkyl; exhibit an unexpectedly good performance in photopolymerization reactions.

Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.

Abstract: A photosensitive conductive paste includes an epoxy acrylate (A) including a urethane bond, a photopolymerization initiator (B), and a conductive filler (C), wherein an added amount of the conductive filler (C) is 70 to 95% by weight with respect to the total solids in the photosensitive conductive paste.

Abstract: A polymer compound has a carboxyl group and a siloxane chain and is obtained in the presence of an acid catalyst by condensation of at least; (I) a siloxane compound having phenol groups at both terminals, as shown by formula (1), (II) phenols shown by formula (2) and/or phenols shown by formula (3), and (III) one or more kinds of aldehydes and ketones shown by the following general formula (4). A polymer compound can be used suitably as a base resin of a chemically amplified negative resist composition with which the problem of delamination generated on metal wires, an electrode, and a substrate, can be improved, and with which a fine pattern can be formed without generating a scum and a footing profile in the pattern bottom and on the substrate, using a widely used aqueous 2.38% TMAH solution as a developer.

Abstract: The optical diffuser mastering of the subject invention includes legacy microstructure surface relief patterns, along with smaller ones, overlaid on the larger ones. The characteristic features produced by the present invention will be found useful to eliminate visible structures in/on optical diffusers, such as those used in movie projection screens (utilizing either coherent (i.e., laser-generated) and non-coherent (e.g., lamp-generated) light), head-up displays (HUDs), laser projection viewing, etc., as the present invention produces much sharper images than those afforded by traditional holographic optical diffusers.

Abstract: The invention provides a method of applying a coating material to a photosensitive material to form a surface coating, wherein the photosensitive material, before or after curing, and the surface coating are soluble in a first liquid, the method comprising applying the coating material as a dispersion in a second liquid in which the photosensitive material is insoluble. By applying the coating material as a dispersion in a liquid in which the photosensitive material is insoluble, the photosensitive material is not disrupted.

Abstract: According to one embodiment, an actinic-ray- or radiation-sensitive resin composition includes an arylsulfonium salt that when exposed to actinic rays or radiation, generates an acid, the arylsulfonium salt containing at least one aryl ring on which there are a total of one or more electron donating groups, the acid generated upon exposure to actinic rays or radiation having a volume of 240 ?3 or greater.

Abstract: A photosensitive conductive paste includes a dicarboxylic acid or an acid anhydride thereof (A); a compound (B) having an acid value of 40 to 200 mg KOH/g; an alicyclic compound (C); a photopolymerization initiator (D); and a conductive filler (E).

Abstract: The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.

Abstract: Disclosed herein are a resin composition, a printed circuit board using the composition, and a method of manufacturing the same. The resin composition includes an epoxy resin; a photoacid generator; and a surface-modified silica by an alkyl sulfonated tetrazole compound.

Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Abstract: A resist pattern-forming method is provided, including: providing a resist film using a photoresist composition; exposing the resist film; and developing the resist film exposed, the photoresist composition containing a polymer having a weight average molecular weight of no less than 1,000 and no greater than 7,500 and having a structural unit that includes an acid-labile group that is dissociated by an action of an acid, a radiation-sensitive acid generator and a solvent composition, and the photoresist composition having a content of solids of no less than 20% by mass and no greater than 60% by mass. The photoresist composition preferably has a viscosity of no less than 50 mPa·s and no greater than 150 mPa·s at 25° C.

Abstract: A resist composition including a base component which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, and an organic solvent component, the base component containing a resin component having a structural unit which generates acid, and the organic solvent component containing an organic solvent component including a compound represented by general formula (s-1) shown below in which X represents a single bond or an alkylene group of 1 to 3 carbon atoms; and n represents an integer of 0 to 3.

Abstract: A resist pattern-forming method capable of forming a resist pattern excellent in pattern collapse resistance in the case of development with the organic solvent in multilayer resist processes. The method has the steps of: (1) providing a resist underlayer film on a substrate using a composition for forming a resist underlayer film; (2) providing a resist film on the resist underlayer film using a photoresist composition; (3) exposing the resist film; and (4) developing the exposed resist film using a developer solution containing no less than 80% by mass of an organic solvent, in which the composition for forming a resist underlayer film contains (A) a component that includes a polysiloxane chain and that has a carboxyl group, a group that can generate a carboxyl group by an action of an acid, an acid anhydride group or a combination thereof.

Abstract: A method and material layer for forming a pattern are disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photoacid generator and a photobase generator; and exposing one or more portions of the second material layer.

Abstract: An undercoat agent usable in phase separation of a layer formed on a substrate, the layer containing a block copolymer having a plurality of polymers bonded, the undercoat agent including a resin component, and 20 mol % to 80 mol % of all the structural units of the resin component being a structural unit derived from an aromatic ring-containing monomer; and a method of forming a pattern of a layer containing a block copolymer, the method including: step (1) coating the undercoat agent on a substrate (1), thereby forming a layer (2) composed of the undercoat agent, step (2) forming a layer (3) containing a block copolymer having a plurality of polymers bonded on the surface of the layer (2) composed of the undercoat agent, and subjecting the layer (3) containing the block copolymer to phase separation, and step (3) selectively removing a phase (3a) of at least one polymer of the plurality of copolymers constituting the block copolymer from the layer (3) containing the block copolymer.