Abstract: Two-stage bake photoresists with releasable quenchers for fabricating back end of line (BEOL) interconnects are described. In an example, a photolyzable composition includes an acid-deprotectable photoresist material having substantial transparency at a wavelength, a photo-acid-generating (PAG) component having substantial transparency at the wavelength, and a base-generating component having substantial absorptivity at the wavelength.

Abstract: A lower resist (2) is applied on a semiconductor substrate (1). An upper resist (3) is applied on the lower resist (2). A first opening (4) is formed in the upper resist (3) by exposure and development and the lower resist (2) is dissolved with a developer upon the development to form a second opening (5) having a width wider than that of the first opening (4) below the first opening (4) so that a resist pattern (6) in a shape of an eave having an undercut is formed. Baking is performed to thermally shrink the upper resist (3) to bent an eave portion (7) of the upper resist (3) upward. After the baking, a metal film (8) is formed on the resist pattern (6) and on the semiconductor substrate (1) exposed at the second opening (5). The resist pattern (6) and the metal film (8) is removed on the resist pattern (6) and the metal film (8) is left on the semiconductor substrate (1) as an electrode (9).

Abstract: A molecular resist composition and a pattern forming process. A molecular resist composition comprising a sulfonium salt having a cation of specific structure and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR, when processed by EB or EUV lithography. The molecular resist composition does not contain a base polymer. The molecular resist composition comprising a sulfonium salt having a cation of specific partial structure has a high sensitivity and forms a resist film with improved resolution and LWR, so that the resist composition is quite useful for precise micropatterning.

Abstract: A method of forming a photoresist pattern includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist composition includes metal particles and a thermally stable ligand attached to the metal particles. The thermally stable ligand includes branched or unbranched, cyclic or non-cyclic, C1-C7 alkyl groups or C1-C7 fluoroalkyl groups. The C1-C7 alkyl or C1-C7 fluoroalkyl groups include one or more of —CF3, —SH, —OH, ?O, —S—, —P—, —PO2, —C(?O)SH, —C(?O)OH, —C(?O)O—, —O—, —N—, —C(?O)NH, —SO2OH, —SO2SH, —SOH, or —SO2—. The photoresist layer is selectively exposed to actinic radiation, and the photoresist layer is developed to form a pattern in the photoresist layer. In an embodiment, the method includes heating the photoresist layer before selectively exposing the photoresist layer to actinic radiation.

Abstract: A resin composition that has excellent flux activity, flexibility and storage stability and that is suitable for a pre-applied underfill material is provided. The resin composition contains a compound (A) having a phenolic hydroxy group, a metal ion trapping agent (B) and a radical polymerizable compound (C).

Abstract: A photoresist includes a polymer and a photoactive compound. The photoactive compound contains a sensitizer component. The photoactive compound contains an acid generator or a base molecular. The acid generator or the base molecular bonds the sensitizer component. The photoactive compound is within a polymer backbone. The sensitizer component is configured to absorb an EUV light to produce electrons.

Abstract: Proposed is a photoresist composition for a KrF light source, which exhibits a vertical profile compared to conventional KrF positive photoresists by adding a resin capable of increasing transmittance in order to form a semiconductor pattern, particularly a chemically amplified positive photoresist composition for improving a pattern profile, which includes, based on the total weight of the composition, 5 to 60 wt % of a polymer resin, 0.1 to 10 wt % of a transmittance-increasing resin additive represented by Chemical Formula 1, 0.05 to 10 wt % of a photoacid generator, 0.01 to 5 wt % of an acid diffusion inhibitor, and the remainder of a solvent, thus making it possible to provide a composition exhibiting a vertical profile, enhanced sensitivity and a superior processing margin compared to conventional positive photoresists.

Abstract: A positive photosensitive resin composition comprises a resin, a diazonaphthoquinone compound and a solvent. The resin comprises a combination of any one or more of polyamic acid, polyamic ester and polyimide of a segment shown in the following structure; . The resin film formed by the positive photosensitive resin composition is applied to a semiconductor passivation film, a semiconductor element protective film, an insulating layer of an organic electroluminescent element, a flat film of a thin film transistor (TFT) substrate, a wiring protective insulating film of a circuit board and a flat film for displays and solid camera elements. The photosensitive resin film formed by the positive photosensitive resin composition has the characteristics of low shrinking rate and excellent heat resistance and resolving power, and has good application effect in electronic elements.

Abstract: Provided are a display substrate and a preparation method thereof, and a display apparatus. The display substrate includes a microcavity structure layer and a light emitting structure layer that are stacked, a reflective electrode being disposed in the microcavity structure layer, a groove being disposed on a surface of the microcavity structure layer, the light emitting structure layer including a first electrode disposed in the groove, and the first electrode being connected to the reflective electrode.

Abstract: A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of a sulfonamide having an iodized aromatic ring, and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and improved CDU, and forms a pattern of good profile after exposure and development.

Abstract: A dielectric composition including a metal oxide particle including a diameter of 5 nanometers or less capped with an organic ligand at at least a 1:1 ratio. A method including synthesizing metal oxide particles including a diameter of 5 nanometers or less; and capping the metal oxide particles with an organic ligand at at least a 1:1 ratio. A method including forming an interconnect layer on a semiconductor substrate; forming a first hardmask material and a different second hardmask material on the interconnect layer, wherein at least one of the first hardmask material and the second hardmask material is formed over an area of interconnect layer target for a via landing and at least one of the first hardmask material and the second hardmask material include metal oxide nanoparticles; and forming an opening to the interconnect layer selectively through one of the first hardmask material and the second hardmask material.

Abstract: The present invention discloses a photosensitive composition, comprising polyvinyl acetate (0% saponified) having a styryl type nitrogen-containing heterocyclic groups such as a styrylpyridinium or/and styrylquinolinium that possesses high UV light energy sensitivity with a small photosensitive group content, high solid content, high water resistance, and very sharp imaging characteristics and produced therefrom photosensitive compositions such as a photo-resist, photolithographic plates, screen printing stencil emulsion and film, and abrasion resistant photosensitive emulsion and film, and other photosensitive compositions being used for commercial and industrial applications.

Abstract: A photoresist is disclosed. The photoresist includes a polymer with one repeating unit and an absorbing unit.

Abstract: A salt represented by formula (I), a generator and a resist composition: wherein R1 and R2 each independently represent an iodine atom, a fluorine atom or an alkyl fluoride group having 1 to 6 carbon atoms; R4, R5, R7 and R8 each independently represent a halogen atom, a hydroxy group, a haloalkyl group having 1 to 12 carbon atoms or an alkyl group having 1 to 12 carbon atoms, —CH2— included in the haloalkyl group and the alkyl group may be replaced by —O—, —CO—, —S— or —SO2—; X1 and X2 each independently represent an oxygen atom or a sulfur atom; m1 represents 1 to 5, m2 and m8 represent 0 to 5, and m4, m5 and m7 represent an integer of 0 to 4, in which 1?m1+m7?5, 0?m2+m8?5; and AI? represents an organic anion.

Abstract: A resist composition comprising an ammonium salt and fluorine-containing polymer comprising repeat units AU having an ammonium salt structure of an iodized or brominated phenol compound and repeat units FU-1 having a trifluoromethylalcohol group and/or repeat units FU-2 having a fluorinated hydrocarbyl group offers a high sensitivity and is unsusceptible to nano-bridging, pattern collapse or residue formation, independent of whether it is of positive or negative tone.

Abstract: A resist composition that generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, which contains a resin component (A1) exhibiting changed solubility in a developing solution under action of acid, the resin component (A1) has a constitutional unit (a01) derived from a compound represented by General Formula (a0-1), W01 represents a polymerizable group-containing group, Ya01 represents a single bond or a divalent linking group, Ra01 represents a cyclic acid dissociable group, q represents an integer in a range of 0 to 3, and n represents an integer of 1 or more, provided that n?q×2+4 is satisfied

Abstract: Disclosed are a compound represented by formula (I), a resin and a resist composition: wherein R1 represents an alkyl group having 1 to 6 carbon atoms which may have a halogen, hydrogen or halogen atom, R2 and R3 each independently represent a hydrogen atom or a hydrocarbon group having 1 to 12 carbon atoms, R4 represents a fluorine atom, an alkyl fluoride group having 1 to 6 carbon atoms or an alkyl group having 1 to 12 carbon atoms, and —CH2— included in the alkyl fluoride group and the alkyl group may be replaced by —O— or —CO—, R5 represents a hydrogen atom, an alkylcarbonyl group having 2 to 6 carbon atoms or an acid-labile group, m2 represents an integer of 1 to 4, m4 represents an integer of 0 to 3, and m5 represents 1 or 2, in which 2?m2+m4+m5?5.

Abstract: Disclosed are a salt represented by formula (I), an acid generator, and a resist composition including the same: wherein R1, R2 and R3 each represent a hydroxy group, *—O—R10, *—O—CO—O—R10, etc.; L10 represents an alkanediyl group; R10 represents an acid-labile group; R4, R5, R6, R7, R8 and R9 each represent a halogen atom, a haloalkyl group or a hydrocarbon group; A1, A2 and A3 each represent a hydrocarbon group which may have a substituent, and —CH2— included in the hydrocarbon group may be replaced by —O—, —CO—, —S— or —SO2—; m1 represents an integer of 1 to 5, m2, m3, m8 and m9 represent an integer of 0 to 5, m4 to m7 represent an integer of 0 to 4, 1?m1+m7?5, 0?m2+m8?5, 0?m3+m9?5; and AI? represents an organic anion.

Abstract: The present invention relates to a homopolymer, copolymer, block copolymer, and statistical copolymer comprising plural polyol monomeric units. The polyol monomeric units being acrylated and acylated or acetalized. The acrylated and acylated or acetalized polyol monomeric units have an average degree of acrylation which is 1 or more, but less than the number of the hydroxyl groups of the polyol and have an average degree of acylation or acetalization which is 1 or more, but less than the number of the hydroxyl groups of the polyol. The present invention also relates to a method of making the homopolymers, copolymers, block copolymers, and statistical copolymers, and using them in various applications, such as asphalt rubber modifiers, adhesives, or an additive in a fracking fluid for oil fracking.

Abstract: Disclosed are a compound represented by formula (I), a resin and a resist composition: wherein R1 represents an alkyl group which may have a halogen atom, a hydrogen atom or a halogen atom; L1 represents a single bond or —CO—O*; R3 represents an alkyl group, and —CH2— included in the group may be replaced by —O— or —CO; R4 represents a fluorine atom, an alkyl fluoride group or an alkyl group, and —CH2— included in the alkyl fluoride group and the alkyl group may be replaced by —O— or —CO—; R5 represents a hydrogen atom, an alkylcarbonyl group or an acid-labile group; m2 and m3 represent an integer of 1 to 3, m4 represents an integer of 0 to 2, and m5 represents 1 or 2, in which 3?m2+m3+m4+m5?5.

Abstract: An optical filter, a sensor device including the optical filter, and a method of fabricating the optical filter are provided. The optical filter includes one or more dielectric layers and one or more metal layers stacked in alternation. The metal layers are intrinsically protected by the dielectric layers. In particular, the metal layers have tapered edges that are protectively covered by one or more of the dielectric layers.

Abstract: The present disclosure relates to a photoresist composition, a method for preparing the same, and a patterning method. The photoresist composition includes: 1 wt % to 10 wt % of a photosensitizer; 10 wt % to 20 wt % of a phenolic resin; 0.1 wt % to 5.5 wt % of an additive; and 75 wt % to 88 wt % of a solvent, based on the total weight of the photoresist composition, in which the photosensitizer includes: 20 wt % to 70 wt % of a first photosensitive compound represented by formula (1), 20 wt % to 70 wt % of a second photosensitive compound represented by formula (2), and 1 wt % to 35 wt % of a third photosensitive compound represented by formula (3), based on the total weight of the photosensitizer. The photoresist composition of the present disclosure simultaneously guarantees high resolution and high sensitivity, and can meet actual production requirements.

Abstract: An onium salt having formula (1) serving as an acid diffusion inhibitor and a chemically amplified resist composition comprising the acid diffusion inhibitor are provided. When processed by lithography, the resist composition exhibits dissolution contrast, acid diffusion suppressing effect, and excellent lithography performance factors such as CDU, LWR and sensitivity.

Abstract: A method and apparatus for forming a resist pattern may be provided. In the method for forming a resist pattern, a resist layer may be formed on a base layer, an electric field may be applied to the resist layer in a thickness direction of the resist layer, and a portion of the resist layer may be exposed with extreme ultraviolet (EUV) light while applying the electric field. A lithography apparatus for performing the method of forming a resist pattern may include at least an exposure part and an electric field forming part. The exposure part may be configured to expose a portion of the resist layer with extreme ultraviolet (EUV) light. The electric field forming part may be configured to apply an electric field to the resist layer.

Abstract: A resist composition containing a resin component (A1) having a constitutional unit derived from a compound represented by General Formula (a01-1).

Abstract: Ligand-capped inorganic particles, films composed of the ligand-capped inorganic particles, and methods of patterning the films are provided. Also provided are electronic, photonic, and optoelectronic devices that incorporate the films. The ligands that are bound to the inorganic particles are composed of a cation/anion pair. The anion of the pair is bound to the surface of the particle and at least one of the anion and the cation is photosensitive.

Abstract: A radiation-sensitive resin composition includes: a resin containing a structural unit A represented by formula (1); at least one radiation-sensitive acid generator selected from the group consisting of a radiation-sensitive acid generator represented by formula (2-1) and a radiation-sensitive acid generator represented formula (2-2); and a solvent. At least one R3 is an acid-dissociable group; and R41 is a hydrogen atom or a protective group to be deprotected by action of an acid. At least one of Rf1 and Rf2 is a fluorine atom or a fluoroalkyl group; R5a is a monovalent organic group having a cyclic structure; X1+ is a monovalent onium cation; R5b is a monovalent organic group, and X2+ is a monovalent onium cation whose atom having a positive charge is not an atom forming a cyclic structure.

Abstract: A resist composition comprising a base polymer and an acid generator containing a sulfonium salt having the formula (1) or an iodonium salt having the formula (2).

Abstract: A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from: The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is linking group.

Abstract: In this work is presented a method for fabrication of high-aspect ratio structures through spalling effect. The spalling is achieved through lithography, etching and sputtering processes, thus providing the flexibility to position the spalled structures according to the application requirements. This method has been successfully demonstrated for metal-oxides and metals. The width of the fabricated structures is dependent on the thickness of the film deposited by sputtering, where structures as small as 20 nm in width have been obtained.

Abstract: A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Requirements 1 to 3, Requirement 1: The A value determined by Formula (1) is 0.14 or more, A=([H]×0.04+[C]×1.0+[N]×2.1+[O]×3.6+[F]×5.6+[S]×1.5+[I]×39.5)/([H]×1+[C]×12+[N]×14+[O]×16+[F]×19+[S]×32+[I]×127)??Formula(1) Requirement 2: The concentration of solid contents in the photosensitive composition for EUV light is 5.0% by mass or less, Requirement 3: The content of the photoacid generator is 5% to 50% by mass with respect to the total solid content in the photosensitive composition for EUV light.

Abstract: A resist composition including a compound (D0) represented by general formula (d0) and a polymeric compound (A10) having a structural unit (a0) derived from a compound represented by general formula (a0-1) shown below (in formula (d0), n represents an integer of 2 or more; in formula (a0-1), W1 represents a polymerizable group-containing group; Ct represents a tertiary carbon atom, and the ?-position of Ct is a carbon atom which constitutes a carbon-carbon unsaturated bond; R11 represents an aromatic hydrocarbon group which may have a substituent, or a chain hydrocarbon group; R12 and R13 each independently represents a chain hydrocarbon group, or R12 and R13 are mutually bonded to form a cyclic group

Abstract: A black photosensitive resin composition comprising (A) an acid crosslinkable group-containing silicone resin, (B) carbon black, and (C) a photoacid generator is coated onto a substrate to form a photosensitive resin coating which has improved reliability with respect to adhesion and crack resistance, resolution and flexibility while maintaining satisfactory light shielding properties.

Abstract: The present specification relates to a binder resin, a photosensitive resin composition, an insulating film and a semiconductor device.

Abstract: Disclosed is a resist composition including a compound represented by formula (I), a resin having an acid-labile group and an acid generator: wherein, in formula (I), R1 represents a halogen atom or an alkyl fluoride group having 1 to 6 carbon atoms, m1 represents an integer of 1 to 5, and when m1 is 2 or more, a plurality of R1 may be the same or different from each other.

Abstract: Disclosed is a resist composition including a compound represented by formula (I), a resin having an acid-labile group and an acid generator, the resin having an acid-labile group including at least one selected from the group consisting of a structural unit represented by formula (a1-1) and a structural unit represented by formula (a1-2):

Abstract: A patterning method includes providing a photosensitive composition on a material layer. The photosensitive composition includes one part by weight of a photo sensitive compound, 1.5 to 8 parts by weight of a resin, and 10 to 40 parts by weight of a diluent. The photosensitive compound has a chemical structure of The patterning method further includes removing the diluent in the photosensitive composition to form a photoresist layer, exposing the photoresist layer, and removing an exposed part of the photoresist layer to expose a part of the material layer.

Abstract: This disclosure relates to functionalized polyhedral oligomeric silsesquioxanes (POSS) and polymeric membranes containing the functionalized POSS. This disclosure also relates to methods of using the membranes for natural gas liquid recovery, such as removal and recovery of C3+ hydrocarbons from natural gas.

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method of processing a substrate includes applying a photoresist layer comprising a photoacid generator to on a multi-layer disposed on a substrate, wherein the multi-layer comprises an underlayer formed from an organic material, inorganic material, or a mixture of organic and inorganic materials, exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process, and applying an electric field or a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction.

Abstract: A resist composition that generates an acid upon exposure is soluble in a developing solution, and is changed by action of an acid. The resist composition contains a resin component having solubility in a developing solution, which is changed by action of an acid, and has a constitutional unit represented by General Formula (a01-1) and a constitutional unit derived from a compound represented by General Formula (a02-1). In General Formula (a01-1), R represents a hydrogen atom, an alkyl group, or a halogenated alkyl group; Yax01 represents a single bond or a linking group; Ax represents a sulfonyl group or a sulfoxide group; and Rax01 represents an alkyl group, an alkoxy group, a halogen atom, or a halogenated alkyl group.

Abstract: The present invention provides a method for forming a patterned polyimide layer with the use of a positive photoresist composition. The composition comprises a cresol-type novolac resin, a diazonaphthoquinone-based sensitizer and an organic solvent; based on the cresol-type novolac resin with a total amount of 100 parts by weight, the amount of the diazonaphthoquinone-based sensitizer ranges from 40 parts to 60 parts by weight, the amount of the free cresol in the cresol-type novolac resin is lower than 2 parts by weight, and the alkaline dissolution rate (ADR) of the cresol-type novolac resin in an aqueous solution of 3.5 wt % to 7 wt % tetramethylammonium hydroxide is lower than 285 ?/s. The positive photoresist composition has excellent chemical resistance to the polyimide stripper, and can specifically improve the protective ability of the photoresist layer to the low-dielectric polyimide layer, thereby optimizing the manufacturing process and quality of the patterned polyimide layer.

Abstract: The present disclosure provides a filter device and a photoresist coating system, and the filter device includes: a liquid storage tank, configured to hold photoresist to be filtered; a stirring structure, including a stirring tank and a stirring assembly at least partially received in the stirring tank; a first pipeline, one end of the first pipeline communicates with the liquid storage tank, and the other end of the first pipeline communicates with the stirring tank; a first filter assembly, provided on the first pipeline and located between the liquid storage tank and the stirring tank; a first pressure detection assembly, provided on the first pipeline and configured to detect a pressure of the photoresist in the first pipeline; and a second pipeline, one end of the second pipeline communicates with the stirring tank, and the other end of the second pipeline communicates with the coating device.

Abstract: A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Conditions 1 and 2, Condition 1: The A value determined by Formula (1) is 0.14 or more, A=([H]×0.04+[C]×1.0+[N]×2.1+[O]×3.6+[F]×5.6+[S]×1.5+[I]×39.5)/([H]×1+[C]×12+[N]×14+[O]×16+[F]×19+[S]×32+[I]×127)??Formula (1): Condition 2: The concentration of the solid content in the photosensitive composition for EUV light is 2.5% by mass or less.

Abstract: The present disclosure is directed to organotin cluster compounds having formula (I) and their use as photoresists in extreme ultraviolet lithography processes.

Abstract: The present invention provides a negative tone photosensitive composition for EUV light, capable of forming a pattern, in which occurrence of missing defects is suppressed and pattern collapse is suppressed. The present invention also provides a pattern forming method and a method for manufacturing an electronic device. The negative tone photosensitive composition for EUV light of an embodiment of the present invention includes a resin A having a repeating unit having an acid-decomposable group with a polar group being protected with a protective group that is eliminated by the action of an acid, and a photoacid generator, in which a ClogP value of the resin after elimination of the protective group from the resin A is 1.4 or less, a value x calculated by Expression (1) is 1.2 or more, and the value x calculated by Expression (1) and a value y calculated by Expression (2) satisfy a relationship of Expression (3).

Abstract: Provided is a compound that can be used as a base resin for a photosensitive resin composition. The photosensitive resin can form a fine pattern and can achieve high resolution without impairing mechanical strength and solubility. The compound is represented by the general formula (1): wherein Z represents a linear, branched or cyclic divalent hydrocarbon group having 2 to 30 carbon atoms; X1 to X3 represent any of —CO2—, —CONRX1—, —O—, —NRX1—, —S—, —SO2—, —SO3— and —SO2NRX1— and may be the same as or different from each other, provided that RX1 is a hydrogen atom or a monovalent hydrocarbon group having 1 to 30 carbon atoms; Ar represents a divalent aromatic group having 2 to 30 carbon atoms; L1 and L2 independently represent a divalent hydrocarbon group having 1 to 30 carbon atoms; and x and y are each independently 0 or 1.

Abstract: A resist underlayer composition and a method of forming patterns, the composition including a solvent; and a polymer that includes a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2,

Abstract: Provided are a photosensitive resin composition in which warping of a cured film after curing is decreased and lithographic properties in a case of forming a pattern are excellent, a cured film, a laminate, a method for producing a cured film, and a semiconductor device. The photosensitive resin composition includes a polyimide precursor including a repeating unit including a biphenyl structure and a photopolymerization initiator having an oxime structure capable of generating an aryl radical by being irradiated with light.

Abstract: The present application provides a photoresist, a display panel, and a display device. The photoresist is with a photosensitive polymerizable compound, wherein under irradiation of light of a first wavelength, the photosensitive polymerizable compound behaves as a hydrophilic polymerizable compound, and under irradiation of light of a second wavelength, the photosensitive polymerizable compound behaves as a hydrophobic polymerizable compound.

Abstract: A photosensitive resin composition is provided comprising 100 pbw of a polyimide silicone containing a primary alcoholic hydroxyl group, a crosslinker, a photoacid generator, a polyfunctional epoxy compound, 1-70 pbw of a filler having an average particle size of 0.01-20.0 ?m, and 0.01-30 pbw of a colorant. The resin composition is colored and photosensitive and cures into a product having an improved modulus.