Post Imaging Radiant Energy Exposure Patents (Class 430/328)
  • Patent number: 9366952
    Abstract: A lithographic method is disclosed that includes, on a substrate provided with a layer of a resist and a further layer of a material provided on the layer of resist, providing a pattern in the further layer, the pattern defining a space via which an area of the layer of resist may be exposed to radiation, a distance between features of the pattern defining the space, and exposing the layer of resist to radiation having a wavelength greater than the distance between features of the pattern defining the space, such that near-field radiation is generated which propagates into and exposes an area of the resist.
    Type: Grant
    Filed: June 15, 2015
    Date of Patent: June 14, 2016
    Assignee: ASML HOLDING N.V.
    Inventor: Donis George Flagello
  • Patent number: 9213239
    Abstract: Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.
    Type: Grant
    Filed: January 22, 2013
    Date of Patent: December 15, 2015
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Scott Light, Yuan He, Michael A. Many, Michael Hyatt
  • Patent number: 9099314
    Abstract: Spacers in a pitch multiplication process are formed without performing a spacer etch. Rather, the mandrels are formed over a substrate and then the sides of the mandrels are reacted, e.g., in an oxidization, nitridation, or silicidation step, to form a material that can be selectively removed relative to the unreacted portions of the mandrel. The unreacted portions are selectively removed to leave a pattern of free-standing spacers. The free-standing spacers can serve as a mask for subsequent processing steps, such as etching the substrate.
    Type: Grant
    Filed: June 30, 2010
    Date of Patent: August 4, 2015
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Gurtej S. Sandhu, Kirk D. Prall
  • Patent number: 9029073
    Abstract: A undercoat agent used for performing phase separation of a layer formed on a substrate and containing a block copolymer having a plurality of blocks bonded, wherein the undercoat agent contains a resin component, the resin component is formed from a structural unit having an aromatic ring and a structural unit not having an aromatic ring, and the resin component has a group that can interact with the substrate, and also has a 3 to 7-membered, ether-containing cyclic group.
    Type: Grant
    Filed: March 5, 2013
    Date of Patent: May 12, 2015
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Takahiro Senzaki, Ken Miyagi, Kenichiro Miyashita
  • Patent number: 9017933
    Abstract: A method for treating a dielectric film on a substrate and, in particular, a method for integrating a low-k dielectric film with subsequently formed metal interconnects is described. The method includes preparing a dielectric film on a substrate, wherein the dielectric film is a low-k dielectric film having a dielectric constant less than or equal to a value of about 4. Thereafter, the method further includes performing a preliminary curing process on the dielectric film, forming a pattern in the dielectric film using a lithographic process and an etching process, removing undesired residues from the substrate, and performing a final curing process on the dielectric film, wherein the final curing process includes irradiating the substrate with ultraviolet (UV) radiation.
    Type: Grant
    Filed: March 25, 2011
    Date of Patent: April 28, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Junjun Liu, Dorel I. Toma, Hongyu Yue
  • Patent number: 9017928
    Abstract: A resin structure for the formation of a micro-structure is manufactured by (A) applying a composition comprising a polymer, a photoacid generator, an epoxy compound, and an organic solvent onto a substrate, (B) heating the composition to form a sacrificial film, (C) exposing imagewise the film to first high-energy radiation, (D) developing the film in an alkaline developer to form a sacrificial film pattern, (E) exposing the sacrificial film pattern to UV as second high-energy radiation, and (F) heating the substrate at 80-250° C. The exposure dose of first high-energy radiation in step (C) is up to 250 mJ/cm2. At the end of step (F), the sacrificial film has a sidewall angle of 80°-90° relative to the substrate.
    Type: Grant
    Filed: January 14, 2014
    Date of Patent: April 28, 2015
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Yoshinori Hirano, Masashi Iio, Hideyoshi Yanagisawa
  • Publication number: 20150111176
    Abstract: The invention relates to the use of a composite resin composition comprising (a) at least one polyreactive binder, (b) a first photopolymerization initiator having an absorption maximum at a wavelength of less than 400 nm, (c) a second photopolymerization initiator having an absorption maximum at a wavelength of at least 400 nm and (d) an absorber having an absorption maximum at a wavelength of less than 400 nm, for the stereolithographic production of a dental shaped part based on composite resin. The invention also relates to a process for the stereolithographic production of a dental shaped part and the use of the composite resin composition in this process.
    Type: Application
    Filed: April 11, 2013
    Publication date: April 23, 2015
    Inventors: Wolfgang Wachter, Jörg Ebert, Dieter Voser, Norbert Moszner, Volker Rheinberger, Jürgen Stampfl
  • Patent number: 9005854
    Abstract: A conductive pattern is formed using a reactive polymer comprising pendant tertiary alkyl ester groups, a compound that provides an acid upon exposure to radiation, and a crosslinking agent. A polymeric layer is patternwise exposed to form first exposed regions with a polymer comprising carboxylic acid groups that are contacted with electroless seed metal ions, and then contacted with a halide to form corresponding electroless seed metal halide. Another exposure converts electroless seed metal halide to electroless seed metal nuclei and forms second exposed regions. A reducing agent is used to develop the electroless seed metal nuclei in the second exposed regions, or to develop the electroless seed metal halide in the first exposed regions. Fixing is used to remove any remaining electroless seed metal halide. The electroless seed metal nuclei are then electrolessly plated in various exposed regions.
    Type: Grant
    Filed: November 5, 2013
    Date of Patent: April 14, 2015
    Assignee: Eastman Kodak Company
    Inventors: Mark Edward Irving, Thomas B. Brust
  • Patent number: 9005875
    Abstract: A method of fabricating a substrate including coating a first resist onto a hardmask, exposing regions of the first resist to electromagnetic radiation at a dose of 10.0 mJ/cm2 or greater and removing a portion of said the and forming guiding features. The method also includes etching the hardmask to form isolating features in the hardmask, applying a second resist within the isolating features forming regions of the second resist in the hardmask, and exposing regions of the second resist to electromagnetic radiation having a dose of less than 10.0 mJ/cm2 and forming elements.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: April 14, 2015
    Assignee: Intel Corporation
    Inventors: Robert L. Bristol, Paul A. Nyhus, Charles H. Wallace
  • Patent number: 8993221
    Abstract: An integrated circuit is made by depositing a pinning layer on a substrate. A block copolymer photoresist is formed on the pinning layer. The block copolymer has two blocks A and B that do not self-assemble under at least some annealing conditions. The exposed block copolymer photoresist is processed to cleave at least some block copolymer bonds in the exposed selected regions. The exposed pinning layer is processed to create a chemical epitaxial pattern to direct the local self assembly of the block copolymer.
    Type: Grant
    Filed: February 11, 2013
    Date of Patent: March 31, 2015
    Assignee: Pixelligent Technologies, LLC
    Inventors: Gregory D. Cooper, Brian L. Wehrenberg
  • Patent number: 8974683
    Abstract: A method of reducing roughness in an opening in a surface of a resist material disposed on a substrate, comprises generating a plasma having a plasma sheath and ions therein. The method also includes modifying a shape of a boundary defined between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the boundary facing the resist material is not parallel to a plane defined by the surface of the substrate. The method also includes providing a first exposure of ions while the substrate is in a first position, the first exposure comprising ions accelerated across the boundary having the modified shape toward the resist material over an angular range with respect to the surface of the substrate.
    Type: Grant
    Filed: September 9, 2011
    Date of Patent: March 10, 2015
    Inventors: Ludovic Godet, Patrick M. Martin, Joseph C. Olson, Andrew J. Hornak
  • Publication number: 20150017590
    Abstract: A coating agent for forming a fine pattern and a method for forming a fine pattern using the coating agent, in which the coating agent allows a resist pattern to be favorably fined, and can form a fined pattern having a suppressed deviation of CD. A coating agent for forming a fine pattern including (A) a water-soluble polymer is combined with a compound in which the compound has an alkyl group having 8 or more carbon atoms bound to a nitrogen atom, and is combined with 4 moles or more of ethylene oxide and/or propylene oxide with respect to 1 mole of a nitrogen atom bound with the alkyl group as (B) a nitrogen-containing compound.
    Type: Application
    Filed: July 9, 2014
    Publication date: January 15, 2015
    Inventors: Tomoya Kumagai, Takumi Namiki
  • Patent number: 8889343
    Abstract: Approaches for utilizing laser annealing to optimize lithographic processes such as directed self assembly (DSA) are provided. Under a typical approach, a substrate (e.g., a wafer) will be subjected to a lithographic process (e.g., having a set of stages/phases, aspects, etc.) such as DSA. Before or during such process, a set of laser annealing passes/scans will be made over the substrate to optimize one or more of the stages. In addition, the substrate could be subjected to additional processes such as hotplate annealing, etc. Still yet, in making a series of laser annealing passes, the techniques utilized and/or beam characteristics of each pass could be varied to further optimize the results.
    Type: Grant
    Filed: December 26, 2012
    Date of Patent: November 18, 2014
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Moshe E Preil, Gerard M. Schmid, Richard A. Farrell, Ji Xu, Thomas I. Wallow
  • Patent number: 8877641
    Abstract: A method for mitigating line-edge roughness on a semiconductor device. The method includes line-edge roughness mitigation techniques in accordance with embodiments of the present invention. The techniques include: reducing the SiON film thickness below a conventional thickness; increasing the photoresist thickness above a conventional thickness; etching the SiON film with an etch bias power less than a conventional wattage amount with an overetch percentage less than a conventional overetch percentage; removing the SiON film layer immediately after completion of the amorphous carbon film layer etching; and lowering the lower electrode temperature below a conventional temperature.
    Type: Grant
    Filed: December 28, 2009
    Date of Patent: November 4, 2014
    Assignee: Spansion LLC
    Inventor: Calvin T Gabriel
  • Patent number: 8852830
    Abstract: A photomask for exposing a region on a substrate, with a mask pattern, including a first line pattern, a second line pattern, a first connection pattern for a peripheral portion of the region and a second connection pattern for the peripheral portion, wherein the first connection pattern is wider than the first line pattern and the second connection pattern is wider than the second line pattern, a distance from a virtual line between the first line pattern and the second line pattern to a center line of the first connection pattern is larger than a distance from the virtual line to a center line of the first line pattern and a distance from the virtual line to a center line of the second connection pattern is larger than a distance from the virtual line to a center line of the second line pattern.
    Type: Grant
    Filed: February 19, 2013
    Date of Patent: October 7, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Satoshi Hirayama, Atsushi Kanome
  • Patent number: 8828650
    Abstract: A method for making a retarder includes: (a) forming a photocurable layer on a substrate, the photocurable layer including at least one photocurable prepolymer that has a plurality of reactive functional groups and a functional group equivalent weight ranging from 70 to 700 g/mol; (b) covering partially the photocurable layer using a patterned mask; (c) exposing the photocurable layer through the patterned mask; (d) removing the patterned mask; (e) exposing the photocurable layer to cure second regions of the photocurable layer so as to form a microstructure; (f) forming an alignment layer on the microstructure; (g) forming a liquid crystal layer on the alignment layer; and (h) curing the liquid crystal layer.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: September 9, 2014
    Assignee: Far Eastern New Century Corporation
    Inventors: Da-Ren Chiou, Wei-Che Hung, Chiu-Fang Chen, Yu-June Wu
  • Patent number: 8828493
    Abstract: Methods are disclosed for forming a layered structure comprising a self-assembled material. An initial patterned photoresist layer is treated photochemically, thermally, and/or chemically to form a treated patterned photoresist layer comprising a non-crosslinked treated photoresist. The treated photoresist is insoluble in an organic solvent suitable for casting a material capable of self-assembly. A solution comprising the material capable of self-assembly dissolved in the organic solvent is casted on the treated layer, and the organic solvent is removed. The casted material is allowed to self-assemble with optional heating and/or annealing, thereby forming the layered structure comprising the self-assembled material. The treated photoresist can be removed using an aqueous base and/or a second organic solvent.
    Type: Grant
    Filed: December 18, 2009
    Date of Patent: September 9, 2014
    Assignee: International Business Machines Corporation
    Inventors: Joy Cheng, William D. Hinsberg, Charles Thomas Rettner, Daniel Paul Sanders
  • Patent number: 8822139
    Abstract: A method for providing an ordered polymer layer at a surface of a substrate includes depositing a self-assemblable polymer layer directly onto a primer layer on a substrate to provide an interface between the self-assemblable polymer layer and the primer layer, and treating the self-assemblable polymer layer to provide self-assembly into an ordered polymer layer, such as a block copolymer, having first and second domain types at the interface. The primer layer is adapted to improve its chemical affinity to each domain type at the interface, in response to the presence of the respective domain type in the self-assembled polymer at the interface during the self-assembly of the self-assemblable polymer layer into the ordered polymer layer. This may lead to reduction in defect levels and/or improved persistence length for the ordered polymer layer. The method may be useful for forming resist layers for use in device lithography.
    Type: Grant
    Filed: January 19, 2011
    Date of Patent: September 2, 2014
    Assignee: ASML Netherlands B.V.
    Inventors: Emiel Peeters, Sander Frederik Wuister, Roelof Koole
  • Patent number: 8821978
    Abstract: A method of forming a layered structure comprising a domain pattern of a self-assembled material utilizes a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist. The developed photoresist is not soluble in an organic casting solvent for a material capable of self-assembly. The developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the material capable of self-assembly and the organic casting solvent is casted on the patterned photoresist layer. Upon removal of the organic casting solvent, the material self-assembles, thereby forming the layered structure.
    Type: Grant
    Filed: December 18, 2009
    Date of Patent: September 2, 2014
    Assignee: International Business Machines Corporation
    Inventors: Joy Cheng, William D. Hinsberg, Ho-Cheol Kim, Young-Hye Na, Daniel Paul Sanders, Linda Karin Sundberg, Hoa D. Truong, Gregory Michael Wallraff, Atsuko Ito
  • Patent number: 8785111
    Abstract: The present application discloses a method for preparing and rendering hydrophilic a nanoporous material of a polymer matrix which has a porosity of 0.1-90% (v/v), such that the ratio between the final water absorption (% (w/w)) and the porosity (% (v/v)) is at least 0.05, the method comprising the steps of: (a) preparing a precursor material comprising at least one polymeric component and having a first phase and a second phase; (b) removal of at least a part of the first phase of the precursor material prepared in step (a) so as to leave behind a nanoporous material of the polymer matrix; (c) irradiating at least a part of said nanoporous material with light of a wave length of in the range of 250-400 nm (or 200-700 nm) in the presence of oxygen and/or ozone. Corresponding hydrophilic nanoporous materials are also disclosed.
    Type: Grant
    Filed: December 9, 2009
    Date of Patent: July 22, 2014
    Assignee: Danmarks Tekniske Universitet
    Inventors: Li Li, Sokol Ndoni, Rolf Henrik Berg, Lars Schulte, Martin E. Vigild
  • Patent number: 8785115
    Abstract: A photoresist removal method is described. A substrate having thereon a positive photoresist layer to be removed is provided. The positive photoresist layer is UV-exposed without using a photomask. A development liquid is used to remove the UV-exposed positive photoresist layer. The substrate as provided may further have thereon a sacrificial masking layer under the positive photoresist layer. The sacrificial masking layer is removed after the UV-exposed positive photoresist layer is removed.
    Type: Grant
    Filed: February 9, 2012
    Date of Patent: July 22, 2014
    Assignee: United Microelectronics Corp.
    Inventors: Hung-Yi Wu, Yuan-Chi Pai, Yu-Wei Cheng, Chang-Mao Wang
  • Patent number: 8778603
    Abstract: A method of treating resist features comprises positioning, in a process chamber, a substrate having a set of patterned resist features on a first side of the substrate and generating a plasma in the process chamber having a plasma sheath adjacent to the first side of the substrate. The method may further comprise modifying a shape of a boundary between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the substrate facing the plasma, wherein ions from the plasma impinge on the patterned resist features over a wide angular range during a first exposure.
    Type: Grant
    Filed: March 11, 2011
    Date of Patent: July 15, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Ludovic Godet, Patrick M. Martin, Timothy J. Miller, Vikram Singh
  • Patent number: 8765358
    Abstract: A water-soluble resin composition for forming fine patterns comprising water-soluble polymer represented by Chemical Formula 1 as below and the first water-soluble solvent, is coated and heated on a photoresist layer having at least one contact hole to reduce a size of the at least one contact hole. (In Chemical Formula 1, each of R1, R2, R3 and R5 independently represents an alkyl group of C1-30 or an cyclo alkyl group of C3-30 which respectively have one selected from the group consisting of hydrogen, an ether group, an ester group, a carbonyl group, an acetal, an epoxy group, a nitril group, an amine group, and an aldehyde group; each of R4, R6, R7 and R8 independently represents hydrogen or a methyl group; n represents an integer of 0 to 5; a represents a real number of 0.05 to 0.5; each of b, c and d respectively represents a real number of 0 to 0.7; and a+b+c+d=1).
    Type: Grant
    Filed: June 29, 2011
    Date of Patent: July 1, 2014
    Assignee: Korea Kumho Petrochemical Co., Ltd.
    Inventors: Sang Wook Park, So Jung Park, Dong-Chul Seo
  • Publication number: 20140154632
    Abstract: A method of modifying a surface of a photoresist material including exposing the photoresist material to an aqueous ionic surfactant solution and varying the pH of the aqueous ionic surfactant solution until a fluorochemical layer is formed in or on the photoresist material. The aqueous ionic surfactant solution includes a perfluoroalkyl sulfonamide the formula: RfS02NH—R? where Rf=CnF2n+1— and n=1 to 6, R?=—H, —CH3, and —CH2CH2OH. The aqueous ionic surfactant solution has a pH of within about 3 pH units of a pKa of the perfluoroalkyl sulfonamide.
    Type: Application
    Filed: August 1, 2012
    Publication date: June 5, 2014
    Applicant: 3M INNOVATIVE PROPERTIES COMPANY
    Inventors: Jason M. Kehren, Patricia M. Savu, Matthew J. Pinnow
  • Patent number: 8735049
    Abstract: A method of making a relief printing element in a liquid photopolymer platemaking process is described. The method comprises the steps of: (a) selectively exposing the liquid photopolymer to actinic radiation through a negative to crosslink and cure portions of the liquid photopolymer; and (b) reclaiming uncured portions of the liquid photopolymer to be reused in the platemaking process. The step of reclaiming uncured portions of the liquid photopolymer comprises (i) heating the printing element to decrease the viscosity of the uncured liquid photopolymer; and (ii) removing uncured liquid photopolymer from the surface of the relief image printing element so that recovery of uncured liquid photopolymer from the surface of the relief image printing element is enhanced.
    Type: Grant
    Filed: May 22, 2012
    Date of Patent: May 27, 2014
    Inventor: Ryan W. Vest
  • Patent number: 8703409
    Abstract: A method for forming a microstructure includes: (a) forming a photocurable layer on a substrate, the photocurable layer including at least one photocurable compound that has a photocurable functional group equivalent weight ranging from 70 to 700 g/mol; (b) covering partially the photocurable layer using a patterned mask; (c) exposing the photocurable layer through the patterned mask using a first light source so that the photocurable layer is cured at first regions which are exposed; (d) removing the patterned mask; and (e) illuminating the photocurable layer using a second light source to cure second regions of the photocurable layer which have not been cured. The first and second regions have different surface heights and provide a surface roughness for the microstructure.
    Type: Grant
    Filed: September 13, 2011
    Date of Patent: April 22, 2014
    Assignee: Far Eastern New Century Corporation
    Inventors: Da-Ren Chiou, Wei-Che Hung, Shoh-Yue Lin, Chiu-Fang Chen, Tzu-Ying Chen
  • Patent number: 8703399
    Abstract: In a method of manufacturing a display apparatus, a first substrate including a plurality of pixels is formed, and a black column spacer is formed on the first substrate. A second substrate is formed, and a liquid crystal layer is formed between the first substrate and the second substrate. The black column spacer is formed by coating a photoresist on the first substrate, exposing the photoresist to a first light, developing the exposed photoresist and exposing the developed photoresist to a second light.
    Type: Grant
    Filed: April 4, 2012
    Date of Patent: April 22, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Gwan-Soo Kim, Dong-Uk Kang, Chul Huh
  • Patent number: 8703394
    Abstract: The present disclosure is a method for forming a thin film pattern to form a micron-pattern and a flat display device having the same. The method for forming a thin film pattern includes the steps of forming first to third thin film layers on a substrate in succession, forming a first photoresist pattern on the third thin film layer, patterning the second and third thin film layers using the first photoresist pattern as a mask to form first and second thin film mask pattern having line widths different from each other, forming a second photoresist pattern at a region where the first and second thin film mask patterns do not overlap positioned between the first thin film layer and the second thin film mask pattern, removing the first and second thin film mask patterns, and patterning the first thin film layer using the second photoresist pattern as a mask.
    Type: Grant
    Filed: June 10, 2011
    Date of Patent: April 22, 2014
    Assignee: LG Display Co., Ltd.
    Inventors: Jeong-Oh Kim, Jung-Il Lee, Kang-Il Kim, Jung-Ho Bang, Jung-Sun Beak
  • Patent number: 8697314
    Abstract: A method of producing a volume hologram laminate which can regenerate a hologram image in an arbitrary wavelength by a simple process. The method uses a volume hologram forming substrate which includes: a substrate, a volume hologram layer formed on the substrate and containing a photopolymerizable material, a resin layer, formed on the substrate so as to contact to the volume hologram layer, containing a resin and a polymerizable compound. The producing method includes processes of: a hologram recording process to record a volume hologram to the volume hologram layer, a substance transit process of transiting the polymerizable compound to the volume hologram layer, and an after-treatment process of polymerizing the polymerizable compound.
    Type: Grant
    Filed: February 28, 2008
    Date of Patent: April 15, 2014
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Minoru Azakami, Koji Eto, Hiroyuki Ohtaki, Yoshihito Maeno, Sakurako Hatori
  • Patent number: 8697342
    Abstract: Disclose herein is a method of modifying a positive-type chemically amplified resist pattern, including the steps of, applying to a surface of a resist pattern, an aqueous solution of a modifier for the positive-type chemically amplified resist pattern, the aqueous solution containing a water-soluble cross-linking agent and a penetration accelerator, the cross-linking agent and the penetration accelerator being dissolved in water or a mixed solvent containing water as a main ingredient, so as to permit the cross-linking agent to penetrate the resist pattern, removing a surplus of the cross-linking agent, and irradiating the resist pattern.
    Type: Grant
    Filed: March 8, 2011
    Date of Patent: April 15, 2014
    Assignee: Sony Corporation
    Inventors: Ichiro Takemura, Isao Mita, Eriko Matsui, Nobuyuki Matsuzawa
  • Patent number: 8691495
    Abstract: A photoresist pattern forming method, comprising a first step of forming on an underlayer a photoresist film which includes a convex portion and a concave portion having a thickness thinner than a thickness of the convex portion, and a second step of processing the photoresist film to form, in a portion which has been the convex portion, an opening having a width narrower than a width of the convex portion, wherein in the second step, the convex portion of the photoresist film is at least partially exposed, and the photoresist film is then developed, and exposure light is condensed by the convex portion in exposing the photoresist film.
    Type: Grant
    Filed: August 24, 2012
    Date of Patent: April 8, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kousei Uehira, Satoshi Hirayama
  • Patent number: 8679728
    Abstract: A method for fabricating a patterned layer is disclosed. Firstly, a semiconductor substrate is provided. Then, a precursory gas on the semiconductor substrate is formed. Finally, a patterned layer on the semiconductor substrate is deposited by reacting the precursory gas with at least one electron beam or at least one ion beam. The present invention not only fabricates a patterned layer on the substrate in a single step but also achieves a high lithographic resolution and avoids remains of contaminations by using the properties of the electron beam or the ion beam and the precursory gas.
    Type: Grant
    Filed: November 21, 2012
    Date of Patent: March 25, 2014
    Assignee: National Applied Research Laboratories
    Inventors: Chien-Chao Huang, Chun-Chi Chen, Shyi-Long Shy, Cheng-San Wu, Fu-Liang Yang
  • Patent number: 8657961
    Abstract: Embodiments of the invention generally provide methods for cleaning a UV processing chamber. In one embodiment, the method includes flowing an oxygen-containing gas through a plurality of passages formed in a UV transparent gas distribution showerhead and into a processing region located between the UV transparent gas distribution showerhead and a substrate support disposed within the thermal processing chamber, exposing the oxygen-containing gas to UV radiation under a pressure scheme comprising a low pressure stage and a high pressure stage to generate reactive oxygen radicals, and removing unwanted residues or deposition build-up from exposed surfaces of chamber components presented in the thermal processing chamber using the reactive oxygen radicals.
    Type: Grant
    Filed: April 4, 2013
    Date of Patent: February 25, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Bo Xie, Alexandros T. Demos, Scott A. Hendrickson, Sanjeev Baluja, Juan Carlos Rocha-Alvarez
  • Patent number: 8652766
    Abstract: An organic passivation film having a high transmittance and capable of setting a taper angle of a through hole within a predetermined range in a liquid crystal display device. A pixel electrode and a source electrode of a TFT are connected by way of a through hole formed in an organic passivation film. The organic passivation film having high productivity, high transmittance, and a predetermined taper angle ? of a through hole can be formed by using a chemical amplification photosensitive resin composition comprising, as a base material, an acrylic resin having a molecular weight of 4,000 to 20,000 and containing 1 to 6 wt % of a photoacid generator as the material for the organic passivation film, performing exposure and development for forming a through hole, and then performing post exposure, prebaking, and baking under appropriate conditions.
    Type: Grant
    Filed: October 3, 2011
    Date of Patent: February 18, 2014
    Assignees: Hitachi Displays, Ltd., Panasonic Liquid Crystal Display Co., Ltd.
    Inventors: Toshimasa Ishigaki, Fumio Takahashi, Toshiki Kaneko
  • Patent number: 8637226
    Abstract: A method of forming an image having multiple phases is disclosed herein. The method includes forming exposed and unexposed areas, the exposed areas comprising a first polymer network exhibiting first and second phases that are chemically connected and have different refractive indices, the first phase being continuous, and the second phase comprising a plurality of structures dispersed within the first phase, and the unexposed areas comprising a second polymer network comprising third and fourth phases that are chemically connected and have different refractive indices, the third phase being continuous, and the fourth phase comprising a plurality of structures dispersed within the third phase. The first and second polymer networks are chemically connected, and morphology formed by the first and second phases is different than that formed by the third and fourth phases.
    Type: Grant
    Filed: February 8, 2012
    Date of Patent: January 28, 2014
    Assignee: 3M Innovative Properties Company
    Inventors: Mieczyslaw H. Mazurek, Raymond P. Johnston, John E. Potts, Marc D. Radcliffe, Kevin R. Schaffer, Audrey A. Sherman, Wendi J. Winkler
  • Patent number: 8574795
    Abstract: Correction of CD variation is accomplished with a second exposure, e.g. using a second reticle. Embodiments include exposing a first wafer with a first dose using a first reflective reticle having a pattern corresponding to a wafer target pattern, or measuring and/or inspecting first reticle pattern portions and calculating and/or simulating corresponding first wafer pattern portions obtained with a predetermined first dosage, identifying CD variations between the exposed wafer or the calculated/simulated first wafer pattern and the target pattern for different target pattern features, exposing a second wafer with the first reticle using a second dose, and correcting the CD variations by applying an additional exposure of the second wafer, before or after exposing the second wafer with the first reticle. Embodiments further include using additional exposures to prevent printing unwanted structures on the reticle or to deliberately vary sizes of selected structures on the wafer for development purposes.
    Type: Grant
    Filed: August 27, 2012
    Date of Patent: November 5, 2013
    Assignee: GLOBALFOUNDRIES Inc.
    Inventor: Arthur Hotzel
  • Patent number: 8563202
    Abstract: A method for stitching a first field mask to a second field mask on a wafer includes providing a photomask with a first set of targets and a second set of targets, printing images of the first set of targets and the second set of targets onto the wafer where the photomask is applied to the wafer having no previous alignment marks formed thereon for the photomask to align to. A first set of alignment marks is formed from the first set of targets and a second set of alignment marks is formed from the second set of targets. The method includes aligning a first field mask to the first set of alignment marks and aligning a second field mask to the second set of alignment marks. The images of the first field mask and the second field mask are thereby stitched together on the wafer.
    Type: Grant
    Filed: April 17, 2013
    Date of Patent: October 22, 2013
    Assignee: Micrel, Inc.
    Inventor: Arthur Lam
  • Patent number: 8551677
    Abstract: Correction of critical dimension variation is accomplished with a second exposure, e.g. using a second reticle. Embodiments include exposing a first wafer with a first dose using a first reticle, having a pattern corresponding to a target pattern for a wafer, identifying CD variations between the exposed wafer and the target pattern for different features in the target pattern, exposing a second wafer with the first reticle using a second dose, less than or equal to the first dose, and correcting the CD variations by applying an additional exposure of the second wafer. Embodiments further include using one or more additional exposures to prevent printing unwanted structures on the reticle or to deliberately vary the sizes of selected structures on the wafer for development purposes.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: October 8, 2013
    Assignee: GlobalFoundries Inc.
    Inventor: Arthur Hotzel
  • Patent number: 8475980
    Abstract: A method of forming a semiconductor device can include determining a shot set including a plurality of shots, based on a final pattern used to form a mask. Shots included in the plurality shots can be classified as being in a first pass shot set or in a second pass shot set, where each can include a plurality of non-directly neighboring shots. A first pass exposure can be performed to radiate a reticle to provide the first pass shot set and a second pass exposure can be performed to radiate the reticle to provide the second pass shot set.
    Type: Grant
    Filed: August 26, 2011
    Date of Patent: July 2, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin Choi, Byung-gook Kim, Hee-bom Kim, Sang-hee Lee
  • Patent number: 8465903
    Abstract: Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.
    Type: Grant
    Filed: October 6, 2011
    Date of Patent: June 18, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Timothy W. Weidman, Timothy Michaelson, Paul Deaton, Nitin K. Ingle, Abhijit Basu Mallick, Amit Chatterjee
  • Patent number: 8465910
    Abstract: Lithographic Method. The method fabricates complex structures and includes depositing a photoresist onto a substrate, the photoresist including a predominantly thermal band of optical absorption possibly due to the incorporation of a doping agent. A three-dimensional pattern is generated within the resist using a first wavelength of light to effect activation of a photoinitiator to produce a latently photostructured resist. Focused laser spike annealing of the photostructured resist with a second wavelength of light selected to be absorbed by the thermally absorbing band to accelerate the photoinduced reaction in the resist is provided. Three-dimensional direct writing may be performed within the resist to define features not part of the interference pattern and the resist is developed to produce the complex structure.
    Type: Grant
    Filed: June 29, 2011
    Date of Patent: June 18, 2013
    Assignee: Massachusetts Institute of Technology
    Inventors: Jonathan Phillip Singer, Jae-Hwang Lee, Steven E. Kooi, Edwin Lorimer Thomas
  • Patent number: 8460857
    Abstract: In the case in which a film for a resist is formed by spin coating, there is a resist material to be wasted, and the process of edge cleaning is added as required. Further, when a thin film is formed on a substrate using a vacuum apparatus, a special apparatus or equipment to evacuate the inside of a chamber vacuum is necessary, which increases manufacturing cost. The invention is characterized by including: a step of forming conductive layers on a substrate having a dielectric surface in a selective manner with a CVD method, an evaporation method, or a sputtering method; a step of discharging a compound to form resist masks so as to come into contact with the conductive layer; a step of etching the conductive layers with plasma generating means using the resist masks under the atmospheric pressure or a pressure close to the atmospheric pressure; and a step of ashing the resist masks with the plasma generating means under the atmospheric pressure or a pressure close to the atmospheric pressure.
    Type: Grant
    Filed: October 3, 2008
    Date of Patent: June 11, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hideaki Kuwabara
  • Patent number: 8445183
    Abstract: A method of manufacturing a semiconductor device, includes: a first resist film formation process of forming a first resist film on a processing target surface using a positive-type photoresist material; a first resist pattern formation process of forming a first resist pattern by performing development after exposure in which light is irradiated onto the first resist film; a second resist film formation process of forming a second resist film on the processing target surface, where the first resist pattern is formed, using a photoresist material; and a second resist pattern formation process of forming a second resist pattern by performing exposure in which light is irradiated onto the second resist film and then performing development. The method further includes an insolubilization process for insolubilizing the first resist pattern against a developer and a solvent of a photoresist material used in the second resist pattern formation process.
    Type: Grant
    Filed: June 29, 2010
    Date of Patent: May 21, 2013
    Assignee: Sony Corporation
    Inventor: Hiroyuki Miyamoto
  • Patent number: 8435728
    Abstract: A method and system for patterning a substrate using a radiation-sensitive material is described. The method and system include forming a layer of radiation-sensitive material on a substrate, exposing the layer of radiation-sensitive material to a pattern of radiation, and then performing a post-exposure bake following the exposing. The imaged layer of radiation-sensitive material is then developed to remove either a region having high radiation exposure or a region having low radiation exposure to form radiation-sensitive material lines. An exposure gradient within the radiation-sensitive material lines is then removed, followed by slimming the radiation-sensitive material lines.
    Type: Grant
    Filed: March 31, 2011
    Date of Patent: May 7, 2013
    Assignee: Tokyo Electron Limited
    Inventors: Michael A. Carcasi, Benjamin M. Rathsack, Mark H. Somervell
  • Patent number: 8426113
    Abstract: The present invention provides chemically amplified silsesquioxane polymers for preparing masks using e-beam lithography. The silsesquioxane polymers have reactive sidechains that in the presence of an acid undergo acid catalyzed rearrangement to generate reactive functionalities that crosslink to form Si—O—Si bonds. The reactive side-chains comprise ?- and ?-substituted alkyl groups bound to the silicon of the silsesquioxane polymer. The substituent of the ?- and ?-substituted alkyl group is an electron withdrawing group. Resists generated with the chemically amplified silsesquioxane polymers of the present invention and imaged with e-beams have resolution of ?60 nm line/space.
    Type: Grant
    Filed: August 13, 2010
    Date of Patent: April 23, 2013
    Assignee: International Business Machines Corporation
    Inventors: Luisa Dominica Bozano, Blake W. Davis, Alshakim Nelson, Jitendra Singh Rathore, Linda Karin Sundberg
  • Patent number: 8420302
    Abstract: A method of fine patterning a thin film and a method of manufacturing a display substrate by using the same, in which a fine photo pattern is formed on a base substrate, and a photoresist pattern is formed on the thin film. A fine photo pattern is formed by ashing the photoresist pattern. A fine pattern is formed by removing the thin film exposing through the fine photo pattern. A fine pattern is formed, and the fine pattern has a higher resolution than that of an exposure apparatus. The reliability of a process for manufacturing a display substrate and the display quality of a display device may be improved.
    Type: Grant
    Filed: June 8, 2009
    Date of Patent: April 16, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yoon-Sung Um, Su-Jeong Kim, Hye-Ran You, Jae-Jin Lyu, Seung-Beom Park
  • Patent number: 8404407
    Abstract: According to certain embodiments, a mask blank for an electron beam writing is provided, capable of forming a resist pattern of a 3-dimensional topology through an one-time writing. The mask blank includes a substrate, a thin film formed on the substrate, and an electron beam resist film formed on the thin film. The electron beam resist film is made of a laminated film including at least a lower resist film and an upper resist film. The lower resist film and the upper resist film have different resist sensitivities with respect to an electron beam.
    Type: Grant
    Filed: December 20, 2010
    Date of Patent: March 26, 2013
    Assignee: Hoya Corporation
    Inventors: Masahiro Hashimoto, Hiroshi Shirotori, Yuusuke Honma, Mitsuhiro Shirakura
  • Patent number: 8394720
    Abstract: A plasma processing method includes modifying a resist pattern of the substrate; and trimming the modified resist pattern through a plasma etching. The modifying includes: supplying the processing gas for modification from the processing gas supply unit to the inside of the processing chamber while the substrate having a surface on which the resist pattern is formed is mounted on the lower electrode; supplying the high frequency power from the high frequency power supply to generate a plasma of the processing gas for modification; and supplying the negative DC voltage from the DC power supply to the upper electrode.
    Type: Grant
    Filed: September 3, 2009
    Date of Patent: March 12, 2013
    Assignee: Tokyo Electron Limited
    Inventor: Jin Fujihara
  • Patent number: 8361699
    Abstract: The present invention relates to a method for performing high speed electron beam lithography (EBL). An electron beam source (EBS), capable of emitting an electron beam towards the energy sensitive resist, forms a first pattern (P1) on the substrate, the first pattern defining a first direction (D1) on the substrate. The electron beam source then forms a second pattern (P2) on the substrate. The energy and/or dose delivered to the energy sensitive resist during the exposure of the first and the second pattern is dimensioned so that the threshold dose/energy of the energy sensitive resist is reached on the overlapping portions of the first and the second patterns (P1, P2). The invention provides a high speed technique for the production of substrates with high quality developed patterns, e.g. hole or dot arrays, by electron beam lithography. Each hole or dot may be defined by the mutually overlapping portions of the first and second pattern, e.g.
    Type: Grant
    Filed: February 5, 2009
    Date of Patent: January 29, 2013
    Assignee: Nil Technology APS
    Inventors: Theodor Kamp Nielsen, Brian Bilenberg, Peixiong Shi
  • Patent number: 8329381
    Abstract: A pattern forming method includes providing a first mask with a first aperture, forming a first transfer pattern on a resist by irradiating a first electron beam through the first aperture, the first transfer pattern extending in a first direction and having a boundary along a circumference thereof, and the first electron beam having a cross section of a first square when emerging from the first aperture, and forming a second transfer pattern on the resist by irradiating a second electron beam through the first aperture, the second transfer pattern extending in the first direction and overlapping a portion the boundary of the first transfer pattern, and the second electron beam having a cross section of a second square when emerging from the first aperture.
    Type: Grant
    Filed: February 17, 2012
    Date of Patent: December 11, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin Choi, Byung-Gook Kim, Hee-Bom Kim, Sang-Hee Lee