Abstract: A two step passivation procedure, used to remove chlorine from polymer layers formed on the sides of metal structures, prior to removal of the defining photoresist shape, and of the polymer layers, has been developed. The procedure features a first passivation step, performed at a low substrate temperature, (100-140° C.) at low RF power, (150 to 250 watts), and using a 2 to 1 ratio of oxygen to water, resulting in removal of corrosion causing chlorine, from the polymer layers, located on the sides of a first group of defined metal structures, which in turn reside at the edge of a semiconductor substrate. A second passivation step, of the two step passivation procedure, is then performed using water only, at higher substrate temperature, (200-250° C.), resulting in removal of chlorine from polymer layers located on the sides of a second set of metal structures, which reside at the center of the semiconductor substrate.

Abstract: After a silicon wafer is held horizontally such that a surface thereof coated with a photoresist faces upwardly, the surface of the silicon wafer is supplied with a cleaning liquid to form a puddle thereof before a developing liquid is supplied. After the puddle of the cleaning liquid is formed, the silicon wafer starts to be rotated and the developing liquid starts to be supplied to the surface of the silicon wafer. The developing liquid is supplied to the surface of the silicon wafer with the puddle of the cleaning liquid being formed thereon. Alternatively, developing liquid is supplied to the surface of the silicon wafer which is being supplied with cleaning liquid while the silicon wafer is being rotated.

Abstract: A method of treating a process-free printing form fitted to a printing-form cylinder includes having an imaging unit act upon a coating of a printing form and produce printing areas and non-printing areas on the printing form, and after the imaging unit has acted upon the coating, operating the imaging unit at reduced power during a return pass into a starting position thereof.

Abstract: A resist stripper has a composition including a highly polar solvent containing at least one member selected from the group consisting of N-methyl-pyrrolidone(N-methyl-2-pyrrolidone), N,N-dimethyl-acetamide, dimethyl-formamide, and N,N-methyl-formamide, and an amine compound soluble in water. A resist film used and its modified hardened portion are stripped and removed by this resist stripper.

Abstract: A method for forming a pattern in a resist is provided. A resist is formed on a surface of a substrate. A first portion of the resist is exposed to a charged particle beam, such as an electron beam, to alter a first characteristic of the first portion of the resist. A second portion of the resist is exposed to electromagnetic radiation, such as UV light, to alter a second characteristic of the second portion of the resist. The second portion is larger than the first portion. At least part of the first portion is removed using the altered characteristics of the resist such that a remaining portion defines the pattern in the resist. Using this method, fine pattern resists having less than 100 nm resolution may be created at high throughput rates.

Abstract: A system and method are described for modifying an exposure image in a radiation sensitive layer with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may include providing different thermal flux to different regions of the radiation sensitive layer to concurrently create different temperatures in those regions. The different temperatures may cause different physicochemical transformation of the regions that may be used to reduce critical dimension errors in those regions. A post exposure bake hot plate may be configured to provide heterogeneous radiant energy flux to a radiation sensitive layer by providing adjustable spacers that adjust a separation distance between the hot plate and the layer. The adjustable spacers may be adjusted prior to exposure image modification by using an adjustment plate having openings to provide access to and adjustment of the adjustable spacers.

Abstract: A system and method are described for modifying an exposure image in a radiation sensitive layer by treating the exposure image with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may comprise providing different portions of the exposure feature, such as different exposure features or critical dimensions, with different thermal fluxes from a thermal modification system, such as a post exposure bake oven or hot plate configured to provide different thermal fluxes. The thermal modification system may comprise one or more adjustable spacers to adjust a radiant energy flux from a thermal energy source to the radiation sensitive layer by adjusting a separation distance between the source and the layer.

Abstract: Disclosed is an etching method of a laminated assembly having a metal layer and a non-thermoplastic polyimide layer bonded together via thermoplastic polyimide, which comprises using an etchant at least containing an alkali metal hydroxide, water and oxyalkylamine, wherein the concentrations of the alkali metal hydroxide (X weight %) and of the water (Y weight %) have relationships represented by coordinate points present within a region (inclusive of boundary lines) defined by the following expressions [1] and [2]:

Abstract: In one embodiment, the present invention relates to a method of treating a patterned resist involving providing the patterned resist having a first number of structural features, the patterned resist comprising an acid catalyzed polymer; contacting a coating containing a coating material, at least one basic compound, a photoacid generator, and a dye with the patterned resist; irradiating the coated patterned resist; permitting a deprotection region to form within an inner portion of the patterned resist; and removing the coating and the deprotection region to provide a second number of patterned resist structural features, wherein the first number is smaller than the second number.

Abstract: An exposure method for transferring a device pattern to a resist, wherein the device pattern includes a first element and a second element having a linewidth narrower than the first element. The method includes a first exposure step for exposing the resist by use of an interference fringe, produced by interference of two light beams, through an exposure amount substantially not greater than a threshold of the resist, and a second exposure step for exposing the resist with a light pattern related to the first and second elements.

Abstract: A process for reducing roughness from a surface of a patterned photoresist. The process includes exposing a substrate having the patterned photoresist thereon to a vapor, wherein the vapor penetrates into and/or reacts with the surface of the photoresist. The substrate having the patterned photoresist thereon is then heated to a temperature and for a time sufficient to cause the surface of the photoresist to flow and/or react with the vapor wherein the surface roughness decreases. Optionally, the substrate is exposed to radiation during the process to increase the etch resistance of the photoresist and/or facilitate the reaction of the vapor with the surface of the photoresist.

Abstract: A method of forming a TFT-LCD device with a rough pixel electrode is disclosed. The method comprises the following steps. First, a first passivation layer is formed on the transparent insulator substrate to cover the transistor. The first passivation layer is etched to form contact holes therein to expose a source structure and a drain structure of the transistor. A pixel electrode is formed on the first passivation layer and filled into the contact holes to connect electrically to the drain structure. A second passivation layer is formed on the first passivation layer and the pixel electrode to cover uniformly the transistor for planarization. Then a lithography procedure is done to etch the second passivation layer to make surfaces thereof rough.

Abstract: In a developing processing of a wafer having a resist film low in the dissolving rate in a developing solution formed thereon and subjected to an exposure treatment, a developing solution of a low concentration is supplied first onto a wafer and the wafer is left to stand for a prescribed time to permit a developing reaction to proceed, followed by further supplying a developing solution having a concentration higher than that of the developing solution supplied first onto the wafer, leaving the substrate to stand and subsequently rinsing the wafer, thereby improving the uniformity of the line width in the central portion and the peripheral portion of the wafer.

Abstract: A sulfonium salt compound designated by a general formula (I), a photoresist composition containing the sulfonium salt compound and a method for patterning by employing the sulfonium salt compound.

Abstract: A positive photoresist bead is removed from an edge surface of a substrate by exposing the photoresist bead with light from an exposing source along a plurality of non-parallel paths approximately normal to the surface of the photoresist bead. The light may be simultaneously directed by a light guide along the non-parallel paths, or a mount may support the light guide adjacent the bead to move the light guide to various positions to direct the light along the non-parallel paths. Alternatively, plural light sources direct light to the bead along non-parallel paths. In any case, the exposed photoresist bead is then removed with a solvent.

Abstract: A method for reducing line edge roughness of photoresist, at least include: provide a photoresist which at least has a trench and is located on substrate; fill trenches so let that trenches are totally filled by an additional material; remove part of additional material which is located on photoresist and substrate; and treat additional material so let that adhesion between additional material and photoresist is enhanced after additional material is treated. Moreover, while only trenches are filled by additional material, step of removing part of additional material could be omitted; while adhesion between additional material and photoresist is good, step of treating additional material could be omitted.

Abstract: A method of forming a resist pattern and an exposure device using the method are provided in which a relatively large pattern, whose dimension is greater than a resolution limit of a KrF exposure technique, and an extremely fine pattern, whose dimension is less than or equal to the resolution limit of the KrF exposure technique, can be formed well and simultaneously. Two patterns are exposed simultaneously by deep UV light of a wavelength of 248 nm on a resist film 10 formed of TDUR-P015 and formed on a surface of an SiO2 film 12. The two patterns are: a circular pattern of a dimension which is made larger, in accordance with a shrinkage rate, than a finally required pattern dimension, which circular pattern is formed at regions to be shrunk; and a circular pattern of a dimension which is finally required, which circular pattern is formed at regions not to be shrunk.

Abstract: Disclosed is an in-situ process that prevents pattern collapse from occurring after they have been etched in S02-containing plasmas. The developed process involving treating the etched wafer to another plasma comprising of a chemically reducing gas such as Hz. This treatment chemically reduces the hygroscopic sulfites/sulfates left on the surface after the main etch step. The lower sulfite/sulfate concentration on the wafer translates into considerably less moisture pick up and prevents high aspect ratio feature collapse.

Abstract: A process for altering exposed and developed photoresist features. The photoresist features are exposed to at least one compound that will react with at least one of itself and at least one component of the photoresist. The reaction takes place in the presence of at least one component of the photoresist. The photoresist features are exposed to reaction-initiating energy during at least one time selected from the group consisting of prior to, simultaneous with and subsequent to exposing the photoresist features to the at least one compound.

Abstract: Provided is a method and apparatus for increasing an etching selectivity of photoresist material. An exemplary method initiates with providing a substrate with a developed photoresist layer. The developed photoresist layer on the substrate includes polymer chains containing silicon. Next, the substrate and developed photoresist layer are exposed to an ultraviolet (UV) light, where the UV light emanates from a UV generating agent. A portion of the developed photoresist layer is then converted to a hardened layer where the hardened layer is created by cross-linking the polymer chains containing silicon and the cross-linking is activated by the UV light. Next an etch may be performed on the substrate using the hardened layer.

Abstract: A method of manufacturing photopolymer marking structures is disclosed. The improved method results in a substantially tack-free marking structure.

Abstract: A photosensitive printing element is used for preparing flexographic printing plates. The photosensitive printing element comprises (a) a flexible support, (b) a photopolymerizable layer comprising an elastomeric composition sensitive to non-infrared actinic radiation, said layer being soluble, swellable or dispersible in a liquid developer prior to exposure to said non-infrared actinic radiation,and (c) at least one layer comprising an infrared radiation sensitive thermographic material which provides excellent image density (e.g., greater than 3.0) at least in the electromagnetic region of said non-infrared radiation sensitivity and preferably in both the visible and ultraviolet regions of the electromagnetic spectrum upon exposure to infrared laser radiation and thermal development. The mask may be on top of the elastomeric composition or underneath the elastomeric composition (where the flexible support is transparent).

Abstract: In order that reaction products of low vapor pressure may be prevented from being deposited on the side wall of a predetermined pattern when this pattern is to be formed by dry-etching a Pt film or a PZT film, a resist mask 54 having a rounded outer periphery at its head is used when the Pt film 53 deposited on a semiconductor substrate 50 is to be dry-etched. After this dry-etching, moreover, an overetching of a proper extent is performed to completely remove the side wall deposited film 55 which is left on the side of the pattern. The resist mask 54 is formed by exposing and developing a benzophenone novolak resist and subsequently by heating to set it while irradiating it, if necessary, with ultraviolet rays.

Abstract: A method of manufacturing photopolymer marking structures is disclosed. The improved method results in a substantially tack-free marking structure.

Abstract: A positive photoresist bead is removed from an edge surface of a substrate by exposing the photoresist bead with light from an exposing source along a plurality of non-parallel paths approximately normal to the surface of the photoresist bead. The light may be simultaneously directed by a light guide along the non-parallel paths, or a mount may support the light guide adjacent the bead to move the light guide to various positions to direct the light along the non-parallel paths. Alternatively, plural light sources direct light to the bead along non-parallel paths. In any case, the exposed photoresist bead is then removed with a solvent.

Abstract: A mask set of two masks and a method of using these masks in a double exposure to avoid line shortening due to optical proximity effects is described. A pattern having pattern elements comprising a number of line segments, wherein each of the line segments has one or two free ends which are not connected to other mask pattern elements is to be transferred to a layer of resist. A first mask is formed by adding line extensions to each of the free ends of the line segments. A cutting mask is formed comprising rectangles enclosing each of the line extensions wherein one of the sides of said rectangles is coincident with the corresponding free end of said line segment. The first mask has opaque regions corresponding to the extended line segments. The cutting mask has transparent regions corresponding to the cutting pattern. In another embodiment a pattern having pattern openings comprising a number of line segments.

Abstract: A lithography method combines both high gap resolution and high processing speed. An electron beam sensitive resist is applied to a substrate, followed by a photoresist. The undesired portions of the photoresist are removed through photolithography. An electron beam flood exposure or oxygen ashing is used to remove those portions of the electron beam sensitive resist not protected by the photoresist. An optical flood is used to remove the remaining photoresist. Electron beam lithography is then used to define narrow gaps within the remaining electron beam sensitive resist.

Abstract: A damascene structure includes a hard mask layer that is applied in a liquid phase to a line dielectric layer. Contemplated hard mask layers comprise a Si—N bond and are densified such that the etch resistivity of the hard mask layer is greater than the etch resistivity of the line dielectric layer and the via dielectric layer in the damascene structure. Particularly preferred hard mask layers include polyperhydrosilazane.

Abstract: In one embodiment, the present invention relates to a method of processing a photoresist on a semiconductor structure, involving the steps of exposing and developing the photoresist; evaluating the exposed and developed photoresist to determine if negative charges exist thereon; contacting the exposed and developed photoresist with a positive ion carrier thereby reducing any negative charges thereon; and evaluating the exposed and developed photoresist with an electron beam.

Abstract: A process for forming sub-lithographic features in an integrated circuit is disclosed herein. The process includes modifying a photoresist layer after patterning and development but before it is utilized to pattern the underlying layers. The modified photoresist layer has different etch rates in the vertical and horizontal directions. The modified photoresist layer is trimmed with a plasma etch. A feature included in the trimmed photoresist layer has a sub-lithographic lateral dimension.

Abstract: The fluorine-containing epoxy resin composition of the present invention comprises a fluorine-containing epoxy resin having in one molecule at least one perfluoroalkyl group having 6 to 12 carbon atoms and at least two alicyclic epoxy groups, and a cationic polymerization catalyst.

Abstract: A process is provided for creating microstructure coupling guides for aligning photonic devices with optical signal carrying apparatuses. The process includes applying a photoresist to a semiconductor material, spinning the semiconductor material, baking the semiconductor material, exposing the photoresist, baking the semiconductor material a second time, and developing the resist. The process creates a microstructure that acts as an integral guide to align and maintain the relative position between an optical signal carrying apparatus and a photonic device.

Abstract: Multiple exposure of a photoresist layer having an exposure depth depending upon the amount of exposure energy applied are executed at different respective exposure energy amounts through a plurality of respective photomasks with different respective opening patterns. The photoresist layer is then processed for image reversal.

Abstract: In one embodiment, the present invention relates to a method of processing an ultrathin resist, involving the steps of depositing the ultra-thin photoresist over a semiconductor substrate, the ultra-thin resist having a thickness less than about 3,000 Å; irradiating the ultra-thin resist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin resist; and contacting the ultra-thin resist with a silicon containing compound in an environment of at least one of ultraviolet light and ozone, wherein contact of the ultra-thin resist with the silicon containing compound is conducted between irradiating and developing the ultra-thin resist or after developing the ultra-thin resist.

Abstract: An imageable element comprises: (A) a substrate; and (B) an imageable composition applied to the substrate comprising: (1) a first layer, comprising: (a) a photosensitive composition capable of absorbing actinic radiation; and (b) a photothermal converter; and (2) an ablatable second layer contiguous to the first layer, wherein the second layer is opaque to the actinic radiation. This imageable element advantageously is useful in both positive and negative working printing plate applications, increases the efficiency of use of mask-generating radiation such as IR radiation and eliminates the need for chemicals and additional time to create a mask.

Abstract: A photolithography method includes applying to a substrate a coating of a film forming composition containing a bonding resin and a film forming material and drying to form a film; selectively coating the film with a photosensitive composition including a photosensitizer to form a film pattern; exposing the film with the film pattern; and developing the film. Therefore, a film in a pattern and having excellent characteristics can be manufactured easily and efficiently. The photolithography method can be applied to any product which requires the formation of a film in a pattern.

Abstract: A photolithographic apparatus for rapidly processing semiconductor wafers. In the photolithographic apparatus, a plurality of steppers are in parallel connected to one coater/developer. The steppers are in parallel connected to one coater/developers, where the steppers process the semiconductor wafer at a low speed and the coater/developers process the semiconductor wafer at a high speed, to thereby remove a bottleneck phenomenon. Therefore, the photolithographic apparatus according to the present invention may rapidly perform a photolithography process.

Abstract: A method for developing copolymer photosensitive resists wherein a single solvent is used in conjunction with a puddle develop tool. The copolymer resist is ZEP 7000 and the developer is ethyl 3-ethoxy propionate (EEP).

Abstract: The invention relates to a method of manufacturing a stamper for producing optical disks, comprising the application of a photoresist to a stamper plate and the structuring of the applied photoresist film. The structuring comprises the successive exposure, development and heating of the photoresist film. The developed photoresist film is subjected to an additional exposure in the deep UV range prior to the final heat treatment. The invention also relates to a stamper and to an optical disk obtained using the stamper.

Abstract: A method of producing a lithographic printing plate which comprises subjecting a printing plate precursor comprising a support having a metallic compound layer which has a photo-catalytic property and a hydrophilic surface and bears light-heat convertible minute particles on the surface thereof to imagewise irradiation of heat mode to convert polarity of the metallic compound layer, thereby forming an imagewise hydrophobic region. The lithographic printing plate can be repeatedly employed.

Abstract: In the exposure and development of available deep ultraviolet (DUV) sensitive photoresist it has been observed that following the standard prior art methods of exposure and development results in a high density of undesirable pieces of components of the photoresist material, Blob Defects, remaining on the semiconductor substrate (body). A method of exposing and developing the photoresist material which results in a reduced incidence of these Blob Defects consists of introducing a low level uniform flood exposure of light in addition to the commonly used exposure to patterned light, followed by standard development. The flood exposure is in the range of 5 to 50% of the dose-to-clear for a non-patterned exposure.

Abstract: An improved method of forming circuit structures having linewidths which are smaller than what is achievable by conventional UV lithographic techniques on ultra-thin resist layers is provided. The method includes a hardmask which is patterned using an ultra-thin resist layer and is then trimmed to reduce the width of the hardmask before etching the underlying gate conductive layer.

Abstract: Multiple exposes of a photoresist layer of which exposure depth is controllable depending upon exposure amount are executed at different exposure amounts via a plurality of photomasks with different opening patterns, respectively.

Abstract: A method for providing color to a stereolithographically produced model is disclosed. This method comprises obtaining data representing the model, such that the data is readable by a stereolithographic model generating machine for solidifying layers of a liquid resin in a vat creating resin layers to create successive cross sections of the model. Each of the resin layers are exposed with energy effective for solidifying the resin. One or more portions of at least one of the resin layers are overexposed with an energy according to a coloring or shading indicated in the data. The model is heated with an effective amount of heat to induce a color or shading change in substantially only the overexposed portions of the model. The model is removed from the vat and cleaned. Next, the model can be exposed to an energy source, followed by the finishing of the model.

Abstract: A planographic printing member precursor comprises a first component, for example a hydroxy group containing polymer, and a second component which may be a siloxane or a compound of general formula (I), wherein M represents a silicon or a titanium atom and each of R1, R2, R3 and R4 is independently selected from hydrogen or halogen atoms; a hydroxy group; an optionally substituted alkyl, alkenyl or alkynyl group; an optionally substituted alkoxy group; or an optionally substituted saturated or unsaturated cyclic or heterocyclic group. On exposure, the second component reacts with the first component to define an oleophobic/hydrophilic material in exposed areas and in non-exposed areas the second component is removed, on processing of the precursor.

Abstract: Wafer developer solution is removed in a wafer spinning process wherein the wafer is spun for a period of time before a deionized water bath is introduced. The delay allows more developer to be spun off before introducing the water, which eliminates residue and particulates on the wafer surface.

Abstract: A surface-treating solution for a photosensitive resin printing plate which comprises an aqueous surface active agent solution and a hydrogen-abstracting agent which can abstract a hydrogen atom of a compound upon irradiation with an active radiation which hydrogen-abstracting agent is uniformly dispersed in the aqueous surface active agent solution.

Abstract: A solution having a photosensitive radical is applied onto a resist film, a developing solution is applied thereonto, and the entire surface of the solution having the photosensitive radical is exposed all at once. Developing of the resist film progresses all at once after a coating film of the solution having the photosensitive radical dissolves in the developing solution, and hence time difference in the start time of developing does not occur in the surface of a substrate, thereby enabling uniform developing and an improvement in line width uniformity (CD value uniformity) in the surface of the substrate.

Abstract: A planographic printing member precursor comprises a first component, for example a hydroxy group containing polymer, and a second component which may be a siloxane or a compound of general formula (I): wherein M represents a silicon or a titanium atom and each of R1, R2, R3 and R4 is independently selected from hydrogen or halogen atoms; a hydroxy group, an optionally substituted alkyl, alkenyl or alkynyl group; an optionally substituted alkoxy group; or an optionally substituted saturated or unsaturated cyclic or heterocyclic group. On exposure, the second component reacts with the first component to define an oleophobic/hydrophilic material in exposed areas and in non-exposed areas the second component is removed, on processing of the precursor.

Abstract: This invention discloses a manufacturing process for preparing sol-gel optical waveguides comprising the steps of solution preparation, an optical waveguide photoresist module process, and optical waveguide molding and sintering. The solution is prepared by mixing water and alcohol to form an alcoholic solution with a properly adjusted pH value followed by mingling with tetraethylorthosilicate (TEOS) at room temperature. The optical waveguide photoresist module process comprises the steps of soft baking, exposure, development, washing by deionized water, drying by a nitrogen gun, and hard baking. The optical waveguide molding and sintering comprises the steps of spinning, sintering, and photoresist module removal.