Abstract: The present invention is a system and method to create two dimensional and three dimensional structures using a maskless photolithography system that is semi-automated, directly reconfigurable, and does not require masks, templates or stencils to create each of the planes or layers on a multi layer two-dimensional or three dimensional structure. In an embodiment, the invention uses a micromirror array comprising up to several million elements to modulate light onto a substrate that has photoreactive or photoresist compounds applied to the exposed surface. The desired pattern is designed and stored using conventional computer aided drawing techniques and is used to control the positioning of the individual mirrors in the micromirror array to reflect the corresponding desired pattern. Light impinging on the array is reflected to or directed away from the substrate to create light and dark spots on the substrate according to the pattern.

Abstract: A method or an apparatus for exposing a resist or a substrate in manufacturing a semiconductor device or the like by using phase shifting masks is arranged to make a multiple exposure to obtain a desired circuit pattern on the substrate. For this purpose, first and second masks are arranged to have phase shift areas formed in the desired pattern in such a way as to give respective different phase shifting effects.

Abstract: A method of marking a polymer-based laminate including a core layer, a cover layer on at least one side of said core layer and an adhesive layer acting between the core layer and the cover layer is provided. The core, adhesive and cover layers have different radiation transmission coefficients. The method comprises the step of selectively irradiating the laminate with laser radiation having a fluence sufficient to mark the adhesive layer at selected locations while maintaining the cover layer intact.

Abstract: A method of recording identifiers, each including a group of character strings A and B including z1, and Z2 characters, respectively, on plate members involves the use of a photomask of a first type and at least one photomask of a second type. The photomask of the first type has an opaque pattern defining the character string A. The photomask of the second type has an opaque pattern defining at least one of the characters of the character string B. The method further includes the steps of forming a photoresist layer on one of the plate members, selectively exposing the photoresist layer to a radiation through the photomask of the first type to form a latent image of the character string A in the photoresist layer, and forming a latent image of the character of the character string B in the photoresist layer through the photomask of the second type.

Abstract: A digital photolithography system is provided that is capable of making smooth diagonal components. The system includes a computer for providing a first digital pattern to a digital pixel panel, such as a deformable mirror device (DMD). The DMD is capable of providing a first plurality of pixel elements for exposure onto a plurality of wafer sites. After exposure, the wafer can be scanned a distance less than the site length. The DMD then receives a second digital pattern for exposing a second plurality of pixel elements onto the plurality of sites of the subject. The exposed second plurality of pixel elements overlaps the exposed first plurality of pixel elements. This overlapping allows incremental changes to be made in the image being exposed, thereby accommodating the creation of diagonal components.

Abstract: A method of forming patterns wherein a first exposure is performed using a first alternating phase shift mask, and a second exposure is performed using a second alternating phase shift mask. Phase shift regions and non-phase shift regions of the second mask are made to correspond respectively to non-phase shift regions and phase shift regions of the first mask. Consequently, light transmitted through phase shift regions of the first mask during the first exposure, is transmitted through second non-phase shift regions of the second mask during the second exposure, so that weak light intensity is compensated for. Intensities of light passed through phase shift regions and non-phase shift regions are thus the same. Therefore, the &Dgr;CD phenomenon and the inversion phenomenon of critical dimensions between phase shift regions and non-phase shift regions with respect to different focuses, may be prevented.

Abstract: A method of fabricating a liquid crystal display device includes forming first and second metal layers on a substrate, forming a first photoresist layer on the second metal layer, partially removing the first photoresist layer, so that the first photoresist layer has first and second portions, removing the first portion of the first photoresist layer and a portion of the second metal layer, so that a portion of the first metal layer is exposed, forming an insulating layer on the second metal layer including the exposed portion of the first metal layer, forming a second photoresist layer on the insulating layer, removing a portion of the second photoresist layer to expose a portion of the insulating layer, and removing the portion of the insulating layer and first metal layer.

Abstract: A method for forming patterned insulating elements on a substrate includes a plurality of exposure steps of exposing a photosensitive paste provided on the substrate through at least one mask having a predetermined pattern; a developing step of developing the exposed photosensitive paste to form a precursor pattern; and a firing step of firing the precursor pattern to form the patterned insulating elements. This method is applied to a method for forming an electron source and a method for forming an image display device including the electron source.

Abstract: An object is to provide a measuring method and a measuring apparatus having excellent working efficiency, which can measure an optional substance contained in a predetermined gas accurately and promptly, and an exposure method and an exposure apparatus. An exposure apparatus S comprises; a measuring section M capable of measuring an absorptive substance, a gas supply unit N which can supply a gas GS in an optical path space LS to the measuring section M, a clean gas supply unit H which can supply a clean gas GT2 in which the absorptive substance has been reduced, to the measuring section M, and a switchover device B which can switch the supply of the gas GS and the clean gas GT2, to the measuring section M. Measurement of the concentration of the absorptive substance contained in the gas GS is performed accurately in a state where the residual absorptive substance in the measuring section M is reduced.

Abstract: A photoresist composition may include formulas 1 and 2: 1

Abstract: A method and apparatus for exposing a radiation-sensitive material of a microlithographic substrate to a selected radiation. The method can include directing the radiation along a radiation path in a first direction toward a reticle, passing the radiation from the reticle and to the microlithographic substrate along the radiation path in a second direction, and moving the reticle relative to the radiation path along a reticle path generally normal to the first direction. The microlithographic substrate can move relative to the radiation path along a substrate path having a first component generally parallel to the second direction, and a second component generally perpendicular to the second direction. The microlithographic substrate can move generally parallel to and generally perpendicular to the second direction in a periodic manner while the reticle moves along the reticle path to change a relative position of a focal plane of the radiation.

Abstract: The invention includes a photolithographic method in which overlapping first and second exposure patterns are formed on a photosensitive material from light passed through a single reticle. The first exposure pattern of the radiation comprises features separated by about a minimum feature spacing that can be accomplished with a single reticle exposure at the time of the photolithographic processing, and the overlapping first and second patterns comprise features separated by less than the minimum feature spacing. The invention also includes a photolithographic method of forming overlapping exposure patterns on a photosensitive material from light passed through a single reticle wherein the reticle is moved between a first exposure to a first light and a second exposure to a second light.

Abstract: Groove patterns on substrates coated with photoresist are made using the technique of photolithography by exposing photoresist via a reticle. In the instant invention, the pattern is provided on the reticle with a period larger than the final period to be printed on the photoresist. The complete pattern is obtained by subjecting the photoresist to two or more exposures and aligning the substrate relative to the reticle between exposures. In a further embodiment the slits on the reticle defining the line width of the grooves are larger than required and photoresist is subjected to multiple partial exposure. Both embodiments significantly reduce diffraction caused by the reticle and improve the resolution of the technique.

Abstract: A direct X-ray system for industrial radiography like non-destructive testing applications, and personal monitoring, being particularly less sensitive to pressure phenomena, has been disclosed, said system consisting of a direct X-ray black-and-white negative-working radiographic film material, comprised of a transparent support coated on at least one side thereof with a tabular grain emulsion layer, substantially free from spectrally sensitizing dyes, in which at least 50 percent of total grain projected area of all grains is accounted for by silver bromoiodide tabular grains having an iodide content of less than 5 mole %, based on silver, having an average aspect ratio of at least 2, and having a volume greater than 0.

Abstract: The invention provides black and white silver halide material for optical contact copying, comprising: at least one photographic emulsion layer including a silver-halide-containing matrix in which the matrix includes a polymer and a hydrophilic binder, wherein the ratio of the weight of silver in the emulsion layer to the weight of polymer in the emulsion layer per unit area is less than 2.0. The photographic material is suitable for use in optical contact copying providing reduced contact gain compared to that provided by conventional photographic material.

Abstract: A method of recording different identifiers, each including at least one character, on multiple plate-type members, involves the use of a photomask of a first type and at least two photomasks of a second type. The photomask of the first type has an opaque pattern that defines a blank region to write the identifier thereon. Each of the photomasks of the second type has an opaque pattern defining the at least one character. The method further includes the steps of forming a photoresist layer on the surface of one of the plate-type members, exposing the photoresist layer, except the blank region, to a radiation through the photomask of the first type, and forming a latent image of the at least one character in the blank region through at least one of the photomasks of the second type.

Abstract: The use of dual-focused ion beams for semiconductor image scanning and mask repair is disclosed. A mask is imaged with either a focused negative ion beam, such as a focused oxygen ion beam, or a focused positive ion beam, such as a focused gallium ion beam. Mask imaging is also referred to as image scanning. Defects in the mask are repaired with the ion beam not used in imaging of the mask. Also disclosed is image scanning being performed with the focused negative ion beam to neutralize potential charge buildup, and mask repair being performed with the focused positive ion beam. An apparatus is disclosed that has a negative ion mechanism supplying negative ions, a positive ion mechanism supplying positive ions, a filter to select the desired ratio of the negative to the positive ions, and an aiming mechanism to focus the ions onto the mask.

Abstract: A method of forming a photoresist pattern by a photolithography technique is composed of: providing a photoresist layer; exposing the photoresist layer to a first pattern-defining light using a first mask; and exposing the photoresist layer to a second pattern-defining light using a second mask. The first mask includes a shielding region shielding the first pattern-defining light. The second mask includes a phase-shifting region having a phase shifter edge and a non-phase-shifting region adjacent to the phase-shifting region on the phase shifter edge. A first light portion of the second pattern-defining light passes through the phase-shifting region. A second light portion of the second pattern-defining light passes through the non-phase-shifting region. A first phase of the first light portion differs from a second phase of the second light portion. The first and second masks are aligned such that the phase shifter edge overlaps on the shielding region.

Abstract: A photomask of this invention includes a main pattern part for forming a main pattern in a resist film and an alignment mark part for forming, in the resist film, an alignment accuracy determining mark not penetrating the resist film in section after development of the resist film.

Abstract: A method for exposing a workpiece in a dual exposure step-and-repeat process starts by forming a design for a reticle mask. Deconstruct the design for the reticle mask by removing a set(s) of the features that are juxtaposed to form hollow polygonally-shaped clusters with a gap in the center. Form unexposed resist on the workpiece. Load the workpiece and the reticle mask into the stepper. Expose the workpiece through the reticle mask. Reposition the workpiece by a nanostep. Then expose the workpiece through the reticle mask after the repositioning. Test whether the plural exposure process is finished. If the result of the test is NO the process loops back to repeat some of the above steps. Otherwise the process has been completed. An overlay mark is produced by plural exposures of a single mark. A dead zone is provided surrounding an array region in which printing occurs subsequent to exposure in an original exposure.

Abstract: An apparatus and method for the proximity photolithography of large substrates is provided. The apparatus includes a mask frame for holding the mask in a substantially vertical position. A tiltable platen is provided for receiving a photoresist-coated substrate in a horizontal position. The platen includes a vacuum chuck for holding the substrate to the platen. The platen is tilted in order to place the substrate in a position parallel to the mask. A motor is used to move the mask into close proximity with the substrate and a scanning exposure is begun. The scanning exposure is accomplished by a rail-mounted shuttle which holds equipment for producing a collimated light beam. A servo motor drives the shuttle along the rail to perform the scanning exposure. Once the exposure is completed, the mask is moved away from the exposed substrate and the platen is lowered to its horizontal position. The vacuum chuck disengages the exposed substrate which is then transported from the platen.

Abstract: A highly accurate structure is optically fabricated simply and in a short time. Rough optical fabrication using an ultraviolet-irradiation optical fabrication process is carried out for a photo-curing resin by emission of a laser beam from a first light source, and thereafter, fine optical fabrication using a two-photon absorption optical fabrication process is carried out by emission of a laser beam from a second light source. As a result, it is possible to realize optical fabrication which allows fabrication of a fine structure using a two-photon absorption optical fabrication process while realizing high speed processing using the ultraviolet-irradiation optical fabrication process.

Abstract: A phase error monitor pattern and its related applications. The phase error monitor pattern includes an alternating phase shift pattern on the peripheries of an alternating phase shift mask and a modification pattern on the peripheries of a modification pattern. The alternating phase shift mask and the modification mask are used in sequence. The alternating phase shift pattern has a plurality of pairs of first nontransparent regions. Each pair of first non-transparent regions is located at each side of a phase shift region. The modification pattern has a plurality of second non-transparent regions. Each second non-transparent region corresponds in position to the nontransparent region on a first side of each pair of first non-transparent regions. The method of monitoring phase errors includes sequentially performing photo-exposure of a positive photoresist using the alternating phase shift mask and the modification mask and measuring the deviations of the monitor photoresist pattern.

Abstract: A photolithographic mask used for defining a layer in an integrated circuit, or other work piece, where the layer comprises a pattern including a plurality of features to be implemented with phase shifting in phase shift regions is laid out including for patterns comprising high density, small dimension features, and for “full shift” patterns. The method includes identifying cutting areas for phase shift regions based on characteristics of the pattern. Next, the process cuts the phase shift regions in selected ones of the cutting areas to define phase shift windows, and assigns phase values to the phase shift windows. The phase shift values assigned comprise &phgr; and &thgr;, so that destructive interference is caused in transitions between adjacent phase shift windows having respective phase shift values of &phgr; and &thgr;. In the preferred embodiment, &phgr; is equal to approximately &thgr;+180 degrees.

Abstract: A method of transferring photomask patterns of a single photomask to a semiconductor wafer. The photomask patterns include at least a first pattern and a second pattern. The semiconductor wafer includes at least a photoresist layer positioned on the surface of the semiconductor wafer. A first exposure process is performed through the first pattern and the second pattern of the photomask to expose a first region and a second region in the photoresist layer, respectively. A second exposure process is then performed through the first pattern and the second pattern of the photomask in order to expose the second region and a third region in the photoresist layer, respectively. The combination of the first pattern and the second pattern in the second region in the photoresist layer is a latent pattern. Lastly, a development process is performed in order to transfer the latent pattern to the photoresist layer.

Abstract: This invention provides cycloaliphatic polyimide having the following formula (I): wherein 1 and n are integers from 4 to 7; m is an integer from 0 to 2; p is an integer from 1 to 8; polycyclic aliphatic compound R reprents C1-8 cycloalkyl, cycloalkenyl, cycloalkynyl, norbornenyl, decalinyl, adamantanyl, or cubanyl. That cycloaliphatic polyimide can be a through transparent film, their thermal stability is over 430° C. and dielectric constant is about 2.7.

Abstract: There are provided methods for making a reticle for use in a photolithography process, comprising forming at least two printable features on a reticle substrate, and forming at least one sub-resolution connecting structure on the reticle substrate, the sub-resolution connecting structure connecting at least two of the printable reticle features, as well as reticles formed according to such methods. In addition, there are provided computer-implemented methods for designing such a reticle, as well as computer readable storage media, computer systems and computer programs for use in making such reticles. In addition, there are provided photolithographic processes using such a reticle. The reticle may be a binary mask, a phase shift mask, or an attenuated phase shift mask.

Abstract: An exposure method and a device to be produced thereby are disclosed, wherein the method includes printing, by an exposure, a fine pattern onto a substrate, and printing, by an exposure, a mask pattern having a smallest linewidth larger than that of the fine pattern, onto the substrate, wherein the fine pattern and the mask pattern are printed on the substrate superposedly, and wherein a fine pattern exposure region in which the fine pattern is to be printed has a size that includes a chip-inside-device forming region in which a chip-inside-device is to be formed in a single chip region to be formed on the substrate.

Abstract: A method of illuminating a layer of a material, in particular a photosensitive resin, using a light source, in order to expose an area of that material to a useful dose of light for subsequent etching of that material in that area, consisting in effecting a first exposure through a pattern of a first mask made up of a central hole and peripheral holes with a first dose of light less than said useful dose, and a second exposure through a pattern of a second mask made up of a single hole with a second dose of light such that the cumulative total of said first dose induced through the central hole of the first mask and the second dose induced through the single hole of said second mask produces at least said useful dose over said area.

Abstract: A photomask producing method according to the present invention segments a parent pattern which is an &agr;-magnification of an original pattern which is a &bgr;-magnification of a circuit pattern into &agr; lengthwise and breadthwise, thereby forming parent patterns on data. The parent patterns are written on a substrate at equal magnification by using an electron beam lithography system, thereby producing master reticles. Reduced images of the parent patterns of the master reticles are transferred on a substrate while performing screen linking, thereby producing working reticle. This photomask producing method can form an original pattern with a high precision and in a short period of time.

Abstract: For phase-shifting microlithography, a method of assigning phase to a set of shifter polygons in a mask layer separated by a set of target features includes assigning a first phase to a first shifter polygon, identifying a set of target features that touch the first shifter polygon, and assigning a second phase to all shifter polygons in the set that touch the set of target features in contact with the first shifter polygon. The set of shifter polygons and the set of target features are separated into aggregates that are spatially isolated from each other such that the phase assignment in one aggregate does not affect the phase assignments in other aggregates.

Abstract: A process for increasing the line width window in a semiconductor process, which is suitable to be used to increase the line width widow at the time of the exposure of an iso-line pattern under 0.13 &mgr;m. This process includes: first forming a positive photoresist layer on the base, then using the first photomask to conduct the first exposure step on the positive photoresist layer. The first photomask is designed to have at least one main line that is opaque. On each of the two sides of the main line, there is a scattering bar. The width of the two scattering bars is greater than ⅓ of the wavelength of the light source that is used, and less than the width of the main line. The second photomask is used to conduct the second exposure step on the positive photoresist layer. The second photomask is designed to have at least two iso-lines that are pervious to light, and each of the two iso-lines is located at one of the two positions corresponding to the two scattering bars of the first photomask design.

Abstract: In accordance with the present invention, a method is provided for improving process photolithography resolution of narrow pitch patterning. The alternate exposure method for improving photolithography resolution of an original pattern with a first pitch, wherein the original pattern is a combination of a plurality of split patterns, comprises the step of providing a substrate having a layer of photoresist formed thereon. Then, a plurality of reticles having the plurality of split patterns with a second pitch is provided, wherein the second pitch is larger than the first pitch. Next, a plurality of exposures is successively performed to form a plurality of exposure regions of the plurality of split patterns in the photoresist layer using the plurality of reticles. The original pattern is transferred into the photoresist layer by combining the plurality of exposure regions of the plurality of split patterns. And then, a development of the photoresist layer is performed.

Abstract: A cartridge that supplies fresh photographic processing solution or chemistry to a photoprocessing machine and recovers silver from spent processing solution. The cartridge is designed to integrate a solution supply system and a silver recovery system to facilitate the collection of silver from spent processing solution, form a less-regulated spent solution and reduce chemical exposures to operators of photoprocessing systems.

Abstract: The photoresist barrier layer of an inkjet printer printhead is processed to enable channels narrower than a predetermined width in the barrier layer to be created without blockage. Relatively large volumes of photoresist which form a wall of the channel are exposed to a partial exposure of electromagnetic radiation to yield a reduced concentration of photoresist barrier layer in the large volume.

Abstract: A self-aligned photolithographic process for forming silicon-on-insulator devices. A substrate made from a transparent insulating material is provided. Conductive devices made from a non-transparent material, material layers made from transparent material and a photoresist layer are formed over the substrate. Transparent substrate areas having conductive devices thereon are non-transparent regions and transparent substrate areas having no conductive devices thereon are transparent regions. Using the substrate as a mask, a contact exposure of the photoresist material is conducted to form a patterned photoresist layer by shining light through the transparent substrate regions.

Abstract: An exposure method comprises the steps of: providing a resist-coated substrate; providing a first mask including first and second regions having respective patterns formed therein; conducting a first exposure process in which the patterns in the first and second regions of the first mask are projected onto the substrate so as to expose first and second regions of the substrate which correspond to the patterns, respectively; and conducting a second exposure process after completion of said first exposure process so as to make an additional exposure of the second region of the substrate. By virtue of the incorporation of the second exposure process so as to make an additional exposure of the second region of the substrate, the resist linewidth which would be otherwise produced in the second region of the substrate by the first exposure process can be compensated through the second exposure process.

Abstract: There is provided an exposure method that includes the steps of forming a phase shift mask having a desired pattern and a cyclic dummy pattern overlaid onto the desired pattern, a part of the desired pattern to be resolved by effects of the dummy pattern being thicker than the dummy pattern's line width, illuminating the phase shift mask by using illumination light having a peak near or on an optical axis in an intensity distribution to transfer the desired pattern onto the exposure plane by projecting light having passed through the phase shift mask onto the exposure plane.

Abstract: A production method of a semiconductor device, includes the steps of emitting an excimer laser from a light source, illuminating a pattern on a mask with the excimer laser emitted from the light source and passed through a filter, exposing a resist on a substrate of the semiconductor with the excimer laser passed through the mask, and forming a pattern on the substrate in accordance with a portion of the resist exposed with the excimer laser.

Abstract: Critical dimension variation of photolithographically formed features on a semiconductor substrate is reduced by measuring the reflectivity of a photoresist layer and an underlying layer, such as a polysilicon layer, and adjusting the exposure level of the photoresist in accordance with the measured reflectivity. This allows precise control of feature width on the photoresist, which in turn allows precision etching of the underlying layer to accurately form a feature, such as a gate electrode.

Abstract: A method of optical proximity correction, suitably applied to a photolithography process with a high numeric aperture. The exposure light comprises a P-polarized light and an S-polarized light perpendicular to the P-polarized light. The P-polarized light has a transmission coefficient larger than that of the S-polarized light. In this method, different optical proximity correction modes are applied to the patterns with different orientations. While correcting any pattern, the ratio of transmission coefficient of the P-polarized light to the S-polarized light and the polarization angle between the pattern orientation and the polarization direction of the P-polarization/S-polarization light are considered.

Abstract: A method of manufacturing a multi-domain liquid crystal display device having a pixel includes the steps of forming an alignment film on at least one of a first and second substrate; covering the alignment film with a mask, there being included a first surface having a plurality of light-transmitting portions and light-shielding portions and a second surface having light-shielding portions corresponding to the light-transmitting portions; radiating light from an upper portion of the mask; and assembling the first and second substrates.

Abstract: A method for manufacturing a multidomain liquid crystal display panel, including the steps of forming a photo-alignment layer on a substrate, positioning a mask having a plurality of regions with different photo-transmittances; and forming different alignment directions in different domains of the photo-alignment layer corresponding to each of the plurality of regions by irradiating the photo-alignment layer with light through the mask.

Abstract: A photoresist layer comprising an optically active component is provided, so that after an incident linearly polarized light penetrates the photoresist layer, the intensity ratio of an S wave polarization and a P wave polarization divided from the linearly polarized light is effectively 1:1 so improving astigmatism.

Abstract: A shielding film is formed on the surface of a substrate and a pair of aperture patterns for light transmission with substantially the same line width are formed in the above shielding film so as to run parallel to each other with a gap and to be isolated from other aperture patterns for light transmission. The exposure amount (exposure energy to sufficiently large aperture pattern) at the time a photoresist is exposed by using this photo mask is 4 or more times and 20 or less times as large as the exposure amount on the border where the photoresist is converted from soluble to insoluble through the exposure or the exposure amount on the border from insoluble to soluble. Thereby, it becomes possible to form a microscopic pattern without using an auxiliary pattern method or a phase shift mask and the default inspection of a mask can be made easy.

Abstract: A shielding film is formed on the surface of a substrate and a pair of aperture patterns for light transmission with substantially the same line width are formed in the above shielding film so as to run parallel to each other with a gap and to be isolated from other aperture patterns for light transmission. The exposure amount (exposure energy to sufficiently large aperture pattern) at the time a photoresist is exposed by using this photo mask is 4 or more times and 20 or less times as large as the exposure amount on the border where the photoresist is converted from soluble to insoluble through the exposure or the exposure amount on the border from insoluble to soluble. Thereby, it becomes possible to form a microscopic pattern without using an auxiliary pattern method or a phase shift mask and the default inspection of a mask can be made easy.

Abstract: An apparatus for automatically cleaning a mask applied to a mask cleaning step after an evaporation process. An RF plasma is used to clean the mask. By isolating the RF plasma generator, the wafer table and the mask table from the grounded reaction chamber, the RF voltage is supplied to the wafer table and the mask table. The bias generated by the RF voltage during evaporation process can thus be reduced to enhance the efficiency of evaporation. After removing the wafer being performed with the evaporation process, the RF plasma can be used to clean the mask. The mask can thus be fixed on the mask table without being removed or renewing the mask table.

Abstract: A resist layer (34) on a semiconductor wafer (20) is patterned by using a scanning exposure system (50) which provides light, containing pattern information which is intended to be transferred to the wafer. The lithographic system is a step and scan system in which a reticle (16) passes between a light source and a lens system(18). The wafer with the resist layer is passed through a focal plane of the patterned light at a tilt angle (&thgr;). The user selects a desirable range for the depth of the resist to be exposed at the focus of the patterned light. The tilt angle is calculated by taking the arc tangent of the desirable range divided by a width of a slit region (52) of the projected light. The depth of focus increases over standard step and scan techniques.

Abstract: A multiple resist layer photolithographic process. A substrate having an insulation layer and a first photoresist layer sequentially stacked thereon is provided. A first light-exposure is conducted to transfer a pattern on a photomask to the first photoresist layer, thereby forming a first exposure pattern. A post-exposure baking is carried out and then the first photoresist layer is developed. A second photoresist layer is formed over the patterned first photoresist layer. A second photo-exposure is conducted to transfer the pattern on the same photomask to the second photoresist layer, thereby forming a second exposure pattern. The second exposure pattern and the first exposure pattern are aligned. Finally, the second photoresist layer is developed.

Abstract: A method for exposing a workpiece in a dual exposure step-and-repeat process starts by forming a design for a reticle mask. Deconstruct the design for the reticle mask by removing a set(s) of the features that are juxtaposed. Form unexposed resist on the workpiece. Load the workpiece and the reticle mask into the stepper. Expose the workpiece through the reticle mask. Reposition the workpiece by a nanostep. Then expose the workpiece through the reticle mask after the repositioning. Test whether the plural exposure process is finished. If the result of the test is NO the process loops back to repeat some of the above steps. Otherwise the process has been completed. An overlay mark is produced by plural exposures of a single mark. A dead zone is provided surrounding an array region in which printing occurs subsequent to exposure in an original exposure. Stepper-framing-blades are moved over the dead zone to prevent additional exposures after an initial exposure.