Abstract: Disclosed is a method for manufacturing a thin film transistor LCD device, in which a counter and a gate bus line are made in a single photolithography process, and a channel of a thin film transistor, a source electrode, a drain electrode, ohmic contacts for the source and drain electrodes are made in a single photolithography process.

Abstract: An exposure method which irradiates a slit-shaped illumination light IL on a reticle Ri and a substrate while moving them synchronously so as to sequentially transfer images of patterns formed on the reticle Ri to the substrate 4, wherein a density filter Fj having an attenuating part for gradually reducing the distribution of illuminance of the illumination light IL is moved in synchronization with the movement of the reticle Ri.

Abstract: An unwanted deposited film is removed from the surface of a photomask in which a desired pattern has been formed. Then, a resist film is exposed to extreme ultraviolet radiation through the photomask, from which the deposited film has been removed, thereby transferring the desired pattern onto the resist film.

Abstract: A method of exposure to a light pattern containing a first strip-shaped portion extending in a first direction and a second strip-shaped portion extending in a second direction comprises steps of placing, on a light-receiving face, a first mask having a strip-shaped slit corresponding to the first strip-shaped portion extending in a first direction of the pattern, projecting, to the first mask, a first linearly polarized light beam polarized in the second direction to irradiate the light-receiving face through the slit of the first mask, removing the first mask from the light-receiving face, and placing, on the light-receiving face, a second mask having a strip-shaped slit corresponding to the second strip-shaped portion extending in a second direction of the pattern and projecting, to the second mask, a second linearly polarized light beam polarized in the first direction to irradiate the light-receiving face through the slit of the second mask.

Abstract: Disclosed is an illumination optical system for illuminating a surface, to be illuminated, with use of light from a light source, which includes a diffractive optical element for forming a desired light intensity distribution upon a predetermined plane, and an angular distribution transforming unit for transforming an angular distribution of light incident or to be incident on the diffractive optical element into a desired distribution.

Abstract: A method for manufacturing an LCD including at least two stacked thin layers in which the upper thin film smoothly and completely covers the lower thin film includes the steps of coating a photo-resist on a patterned layer, patterning the photo-resist by exposing and developing the photo-resist with a mask which has lines and spaces in which a distance between the lines is smaller than a resolution of an exposure system used and etching the metal layer using the patterned photo-resist as a mask.

Abstract: A method for manufacturing a multidomain liquid crystal display panel, including the steps of forming a photo-alignment layer on a substrate, positioning a mask having a plurality of regions with different photo-transmittances; and forming different alignment directions in different domains of the photo-alignment layer corresponding to each of the plurality of regions by irradiating the photo-alignment layer with light through the mask.

Abstract: Disclosed is an exposure method in which a multiple exposure process including a first exposure for a first pattern and a second exposure for a second pattern is performed by use of a projection optical system to thereby resolve a desired pattern, wherein a numerical aperture NA1 of the projection optical system for the first pattern exposure and a numerical aperture NA2 of the projection optical system for the second pattern exposure are made different from each other.

Abstract: Herein disclosed is an exposure technology for a semiconductor integrated circuit device which has a pattern as fine as that of an exposure wavelength. The technology contemplates to improve the resolution characteristics of the pattern by making use of the mutual interference of exposure luminous fluxes.

Abstract: A method of manufacturing an electron device provided with minute structure such as a semiconductor integrated circuit using projection exposure technique and phase shift mask technique, maintaining a high yield is disclosed. In an electron device manufacturing method according to the invention, a desired electron device is manufactured by printing a light shielding film pattern on a photosensitive film provided on the surface of a workpiece by a projection tool using a mask where a phase shifter having predetermined thickness is partially formed on the flat surface of a transparent plate and a light shielding film having a predetermined pattern and made of non-metal is partially provided with the film covering the end of the shifter and developing the photosensitive film.

Abstract: A circuit pattern surface curving in correspondence with the surface shape of a ball-like semiconductor device material such as a silicon ball is formed in a reticle. A resist-applied surface of the device material is so exposed as to move the ball-like semiconductor device material close to the circuit pattern surface. In this manner, a circuit pattern is formed on the surface of the ball-like device material.

Abstract: A method of contact printing on a device using a partially transparent mask (18) having first and second surfaces, comprises the steps of applying a layer of low surface energy polymeric material (22) to the first surface of the mask; placing the first surface (24) of the mask contiguous to the device (10), the layer of low surface energy polymeric material being substantially in contact with the device; and applying radiation (32) to the second surface of the mask for affecting a pattern in the device.

Abstract: In a lithographic projection apparatus, a reflective-type mask MA is attached to a compliant membrane 110 on a mask table MT. The backside of the membrane is in turn attached to a plurality of actuators 140 which are operable to deform the membrane. A mask level sensor can be used to detect the level of the mask and the actuators operate to keep the mask at a constant level. Additionally, the actuators may also serve to keep the mask flat and in the correct planar orientation. FIG.

Abstract: A process for crosslinking polyacrylate compositions, wherein, by selective irradiation of the pressure-sensitive adhesive composition with electron beams, the polymer is cured only in certain structures and, as a result, structured pressure-sensitive adhesive compositions can be prepared.

Abstract: A method of forming a metal wiring using a dual damascene process is provided. A photosensitive polymer having low permittivity is used as an etch mask. Though the etch mask remains in the final structure, its low permittivity reduces parasitic capacitance effects. In this method, a photosensitive polymer pattern having a first hole with a first width is formed on a first interlayer dielectric film. A second interlayer dielectric film is formed on the photosensitive polymer pattern. A mask pattern, having a second hole, above the first hole, with a second width larger than the first width, is formed on the second interlayer dielectric film. A wiring region is formed by dry-etching the second interlayer dielectric film using the mask pattern as an etch mask. A via hole region is formed by dry-etching the first interlayer dielectric film using the photosensitive polymer pattern as an etch mask.

Abstract: An intermediate substrate holder for use in a lithographic projection apparatus, which holder can itself be held by a standard substrate holder in said lithographic projection apparatus and in turn can hold a non-standard substrate. The means for holding the non-standard substrate may be comprised of one of or both of a vacuum holding means and mechanical clamping means. The vacuum holding means may be comprised of: a vacuum space on which the non-standard substrate is placed; a barrier means around the edge of the vacuum space that closes off the vacuum space and that makes a sealing contact with the non-standard substrate; and a means for exposing the vacuum space to vacuum. The mechanical clamping means may be comprised of: two or more stationary positioning pins opposed by a slidable mechanism which is provided with at least one sliding positioning pin mounted thereon and which is biased to move the sliding positioning pin towards the stationary pins.

Abstract: A photomask having small pitch images of openings for fabricating an opening of a semiconductor memory device includes a plurality of images of openings arranged in a row direction with a predetermined pitch to be used to transfer the images of openings onto a photoresist layer, and is used for a photolithographic process employing a photoresist flow process. The distance between the centers of the images of openings arranged in the photomask is larger than the pitch. A photolithographic method for fabricating reduced size openings and a semiconductor memory device having openings fabricated using the same method is also provided.

Abstract: A system of etching using quantum entangled particles to get shorter interference fringes. An interferometer is used to obtain an interference fringe. N entangled photons are input to the interferometer. This reduces the distance between interference fringes by n, where again n is the number of entangled photons.

Abstract: An object of the invention is to provide an illumination apparatus and exposure apparatus and method employing this, whereby the illumination distribution on a mask or wafer can be compensated to a desired distribution, and whereby it is possible to independently alter the pupil shape (coherence factor) of illuminating light in respect of various image heights above the wafer.

Abstract: A method and apparatus for printing vertically and horizontally aligned features having reduced, substantially equal, critical dimensions on a photoresist-coated semiconductor wafer are disclosed. Radiant energy is passed through a pattern transfer tool to irradiate a first region of the wafer when the wafer is at a first position relative to the pattern transfer tool. The wafer is then positioned at a second position relative to the pattern transfer tool offset from the first position by a first distance along an axis aligned with the horizontal features and by a second distance along an axis aligned with the vertical features. The second distance is different from the first distance by a compensation distance. Radiant energy is then passed through the pattern transfer tool to irradiate a second region of the wafer region defining a second side of each of the horizontally and vertically aligned features.

Abstract: A polymer material is exposed to radiation of a type that changes some aspect of the polymer's radiation passing properties. The radiation that caused the property change is then contained by the material. The property change can be self-focusing or self-trapping light can be used. In that case, the same light that causes the photopolymerization is contained by the change in index of refraction that is caused by the polymerization.

Abstract: The non-uniformity edge effect that can affect the quality of chips near the edge of a semiconductor wafer of various steps in the manufacture of integrated circuits is reduced. This is achieved by increasing the field area exposed by a step and repeat printer only when printing squares for chips located near the wafer edge. As a result there is also printed for processing an additional non-functional area outside the functional area to reduce the non-uniformity effect. This increases throughput of the printing apparatus.

Abstract: A reticle pattern is split into a first pattern which defines a configuration in the shorter dimension (X direction) and a second pattern which defines a configuration in the longer dimension (Y direction). The length in the longer dimension of each light-blocking pattern element of the first pattern is set longer than the length in the Y direction of the original reticle pattern. The second pattern has two opening pattern elements arrayed in the Y direction at a predetermined interval. The interval is set to a distance which is not shorter than the length in the Y direction of the original reticle pattern and is shorter than the length of each light-blocking pattern element. The image of the first pattern and the image of the second pattern are superimposed on one another by overlay exposure.

Abstract: A method for determining translation portion of misalignment error in a stepper. In one embodiment, the method comprises a series of steps in a stepper, starting with the step of receiving a wafer in the stepper. In another step a first pattern, including an error-free fine alignment target, is created on the wafer. Next, the wafer is realigned in the stepper using the error-free fine alignment target. Then a second pattern is created on the wafer overlaying said first pattern. In another step, the translational error between the first pattern and the second pattern is measured.

Abstract: Provided in the present invention are methods and apparatuses for transporting a substrate plate efficiently, for positioning the substrate plate to enable to minimize mechanical motions and generation of vibration associated with conventional substrate positioning, and for holding the substrate. For example, the present exposure apparatus has a plurality of electrodes arranged along the baseplate and a transport apparatus having a control apparatus to impress a voltage on each electrode to first generate static charges in the substrate plate, then to impress a voltage on each of the plurality of electrodes so that the charge code of the electrodes is the same as the charge code of the substrate plate, and to switch the voltage on the electrodes in accordance with the time interval required to produce dielectric polarization in the substrate plate. The substrate plate can be transported by electrostatic forces at high speed without contacting the baseplate.

Abstract: A balanced positioning apparatus comprises a balance mass which is supported so as to be moveable in the three degrees of freedom, such as X and Y translations and rotation about the Z-axis. Drive forces in these degrees of freedom act directly between the positioning body and the balance mass. Reaction forces arising from positioning movements result in corresponding movement of the balance mass and all reaction forces are kept within the balanced positioning system. The balance mass may be a rectangular balance frame having the stators of two linear motors forming the uprights of an H-drive mounted on opposite sides. The cross-piece of the H-drive spans the frame and the positioned object is positioned within the central opening of the frame.

Abstract: The present invention aims at reducing the number of scanning exposure and at enhancing throughput.

Abstract: A double exposure process is disclosed whereby a first exposure produced by conventional photolithographic techniques generates a latent negative image in a photoresist etch mask layer (22), the image subsequently employed to modulate a second exposure generated by the multiple beam interferometric lithography technique. Periodic surface relief structures (80) patterned by the second exposure and formed after development of the exposed photoresist material, are restricted to regions (52) defined by the initial exposure, with the photoresist material (54) outside these regions remaining unmodulated, or devoid of the periodic structures (80), and suitable for use as a mask in a subsequent etching process.

Abstract: Provided is a method of manufacturing a thin film magnetic head which can precisely control a pole width and obtain sufficient overwrite properties even when the pole width is reduced. A top pole has a step along the width, which is changed substantially perpendicularly, at a coupling portion between an intermediate portion and an end portion for defining a track width. A photoresist pattern functioning as a mask for forming the top pole is formed by using a negative photoresist. A photomask for forming this photoresist pattern has a concave pattern at a corner of the step along the width. Thus, the corner at the coupling portion between the intermediate and end portions of the top pole has a sharp edge. Thus, even if a throat height is changed, a write track width is not changed. Thus, a stable write track width can be obtained, and the write track width can be narrowed.

Abstract: A cylindrical lenticular image is made possible by the interlacing of multiple views of an object. The interlaced views are then printed on a substrate and the substrate formed into a cylinder. A lenticular lens is then properly aligned with the substrate. The result is a three dimensional image that can be rotated to reveal a full three-hundred and sixty degree perspective of the imaged object.

Abstract: A maskless exposure system for selectively exposing a photosensitive work surface, such as a photoresist layer, includes a semiconductor substrate having an elongated aperture. A series of shutters and associated guides are formed upon the substrate using conventional wafer processing methods. The shutters move between a first position covering the aperture and a second position exposing the aperture. A corresponding series of computer-controlled actuators, in the form of electromagnetic coils, cooperate with the shutters for selectively sliding each shutter between its first and second positions. A light beam is directed toward the aperture, and the shutters create a patterned light beam exiting the aperture. A computer-controlled stepper is synchronized with the shutter actuators and adjusts the relationship between the patterned light beam and the photosensitive work surface to direct the patterned light beam at different portions of the work material.

Abstract: The present invention provides a method of manufacturing a circuit element which includes a step of performing first exposure for transferring a pattern having a narrowed portion for forming a particular pattern, onto an exposure-target substrate, and a step of moving the pattern in a direction not parallel to a segment forming an outer circumference of the narrowed portion and performing second exposure for transferring the pattern onto the exposure-target substrate.

Abstract: A motion picture intermediate film has on one side of a support material, in order, an antihalation undercoat and at least one silver halide emulsion layer; and on the opposite side of the support a transparent, process surviving antistatic backing layer. The transparent, antistatic backing layer retains its antistatic properties after photographic film processing so that the motion picture intermediate film is protected from the generation of static charge during high speed printing of, for example, motion picture print films. The antistatic backing layer of the invention has a resistivity of less than about 1×1011 &OHgr;/□ after film processing. In a most preferred embodiment, the motion picture intermediate film of the invention is used to print images onto a motion picture print film that has a transparent antistatic backing layer.

Abstract: Methods are provided for producing relief images having improved fidelity and resolution. The methods comprise positioning an image-bearing negative transparency closely adjacent and substantially parallel to a layer of a photocurable material; positioning on the other side of the negative from the photocurable material and in substantially parallel relationship thereto; providing a collimator that has first and second opposing major faces and comprises at least one cell that extends from said first collimator face to said second collimator face and is defined by at least one surface that substantially absorbs actinic radiation incident upon said surface; positioning said collimator opposite a photographic negative that is adjacent a layer of photocurable material; and passing actinic radiation through said collimator for a time sufficient to form a latent relief image in the photocurable material.

Abstract: The non-uniformity edge effect that can affect the quality of chips near the edge of a semiconductor wafer of various steps in the manufacture of integrated circuits is reduced. This is achieved by increasing the field area exposed by a step and repeat printer only when printing squares for chips located near the wafer edge. As a result there is also printed for processing an additional non-functional area outside the functional area to reduce the non-uniformity effect. This increases throughput of the printing apparatus.

Abstract: A maskless lithography system that provides large-area, seamless patterning using a reflective spatial light modulator such as a Deformable Micromirror Device (DMD) directly addressed by a control system so as to provide a first pattern, via a first projection subsystem, on a first photoresist-coated substrate panel, while simultaneously providing a duplicate pattern, which is a negative of the pattern on the first substrate panel, via a second projection subsystem, onto a second photosensitive substrate panel, thus using the normally-rejected non-pattern “off” pixel radiation reflected by the “off” pixel micromirrors of the DMD, to pattern a second substrate panel. Since the “off” pixel reflections create a pattern which is complementary to the “on” pixel pattern, using a complementary photoresist coating on the second substrate panel provides for a duplicate pattern, as is usually desired.

Abstract: The resist to be used for the method of this invention in producing a semiconductor device is patterned by a procedure which comprises the steps of disposing in the direction of a semiconductor wafer a first mask having circuit patterns repeatedly formed at a plurality of positions, then shielding those of said plurality of circuit patterns which overlap the edge of the semiconductor wafer with a blind to an extent such that the remaining circuit patterns are not shielded, exposing a resist overlying the semiconductor wafer by using the first mask held in a state partially shielded by the blind, projecting light through a second mask provided with a light passing pattern defined by a shielding film to an area of the resist to which the edge of the blind is transferred, and developing the resist

Abstract: A method for patterning a layer of photoresist includes the steps of 1) exposing the photoresist through a standard precision mask to define all possible patterns and features, and 2) selecting desired patterns and features with a non-precision targeting energy beam or mask. Consequently, no custom precision masks are required to pattern the various layers of photoresist during the fabrication of application specific integrated circuits (ASICs), thereby reducing both the lead-time and costs for manufacturing ASICs.

Abstract: The invention relates to a method of manufacturing a nozzle member, having the step of splitting light from a light source by amplitude splitting to form a plurality of illumination beams, and the step of illuminating a plurality of mask patterns formed on a mask with the corresponding split illumination beams so as to expose a workpiece via the mask patterns, and a work apparatus using the method.

Abstract: Photolithographic methods and apparatus for reducing or eliminating the proximity effect. Multiple exposures using different exposure parameters are used to reduce or to eliminate the proximity effect.

Abstract: A method of forming a metal wiring using a dual damascene process is provided. A photosensitive polymer having low permittivity is used as an etch mask. Though the etch mask remains in the final structure, its low permittivity reduces parasitic capacitance effects. In this method, a photosensitive polymer pattern having a first hole with a first width is formed on a first interlayer dielectric film. A second interlayer dielectric film is formed on the photosensitive polymer pattern. A mask pattern, having a second hole, above the first hole, with a second width larger than the first width, is formed on the second interlayer dielectric film. A wiring region is formed by dry-etching the second interlayer dielectric film using the mask pattern as an etch mask. A via hole region is formed by dry-etching the first interlayer dielectric film using the photosensitive polymer pattern as an etch mask.

Abstract: It is to provide a process for forming a mask pattern and a process for producing a thin film magnetic head, in which burr is not formed on removing a resist. The process for forming a mask pattern comprises a first coating step of coating a first resist on a surface, on which the mask pattern is formed; a first exposure step of forming a pattern latent image by exposing the first resist; a second coating step of coating a second resist on the first resist; a second exposure step of forming a pattern latent image by exposing the second resist; a first development step of forming an upper layer mask pattern by developing the second resist; and a second development step of forming a lower layer mask pattern by developing the first resist, the upper layer mask pattern having a resist bridge part, and a space being present between the resist bridge part and the surface, on which the mask pattern is formed.

Abstract: A method of forming raised and recessed patterns comprising: the first step of forming over a substrate a photosensitive resin layer including an alkali-insoluble resin and a negative type photosensitive resin, or the first step of forming over a substrate a photosensitive resin layer including a thermosetting resin and a negative type photosensitive resin and then heat-treating the photosensitive resin layer to harden at least a part of the thermosetting resin; the second step of exposing the photosensitive resin layer; and the third step of developing the photosensitive resin layer and hardening it to form a raised and recessed pattern including raised portions representing an exposed region and recessed portions representing an unexposed region. Liquid crystal display color filters which comprises over the substrate a colored layer, and a transparent protective layer and transparent columnar raised portions formed by one of the above two methods.

Abstract: A checking routine verifies a phase shifted mask (PSM) design based on fundamental principles of PSM and utilizing only basic shape manipulation functions and Boolean operations found in most computer aided design (CAD) systems. The design verification system checks complete chip designs for the two possible design errors that can cause defective masks by eliminating the phase transition; namely, placing a 180° phase region on both sides of a critical feature or completely omitting the phase region adjacent to certain critical features.

Abstract: A method for exposing photo-sensitive printing plates comprises applying a patterned coating to the printing plate to form a mask. The coating may be sprayed onto the printing plate and patterned by laser ablation. The method avoids the need to stock printing plates with integral masking layers. In preferred implementations the printing plate is exposed to actinic radiation without dismounting it from the apparatus in which the coating is applied. This minimizes the likelihood that the coating could be damaged in handling. The coating may be a thin sprayed on layer of carbon in a suitable binder.

Abstract: A method for patterning a thin film layer into a predetermined configuration improves resolution thereof by exposing a partial depth “d” of a photoresist layer to a light beam. The patterning method includes the steps of: (a) preparing a semiconductor substrate with the thin film layer, an intermediate layer and a photoresist layer formed thereon, successively; (b) exposing a partial depth of the photoresist layer to a light beam; (c) removing the portion of the photoresist layer exposed to the light beam by using a solution to thereby obtain a patterned photoresist layer; (d) etching the intermediate layer by using the patterned photoresist layer as a mask; and (e) patterning the thin film layer into the predetermined configuration by using the etched intermediate layer as a mask.

Abstract: A method of forming a resist pattern comprising the steps of depositing a resist on a semiconductor substrate, performing a first exposure on the resist using a reticle with a certain pattern formed on it as a mask to change the degree of polymerization at the exposed area in the resist, causing diffusion of a silicon compound to silylate selectively a part of the surface of the resist, performing a second exposure on the resist so that light passing through the silylated area and the unsilylated area become inverse in phase, and developing the resist for forming a micropattern on the resist.

Abstract: A method for fabricating a substantially transparent polymer substrate for an anti-scatter x-ray grid for medical diagnostic radiography includes positioning a phase mask between the substrate and a high power laser; providing a laser beam from the laser; conditioning the laser beam; ablating a first portion the substrate through the phase mask with the conditioned laser beam; and moving the substrate; and ablating a second portion of the substrate through the phase mask with the conditioned laser beam.

Abstract: An improved method of integrated circuit fabrication is described with a photolithographic step involving pattern decomposition. A desired final pattern is decomposed into two or more component patterns for photoresist imaging, leading to improvements in image fidelity.

Abstract: A process for creating and an apparatus employing shaped orifices in a semiconductor substrate. A first layer of material is applied on the semiconductor substrate then a second layer of material is then applied upon the first layer of material. An orifice image is then transferred to the first layer of material and a fluid-well image is transferred to the second layer of material. That portion of the second layer of material where the orifice image is located is then developed along with that portion of the first layer of material where the fluid well is located to define an orifice in the substrate.