Abstract: A method that is disclosed that includes the operations outlined below. Dies are arranged on a test fixture, and each of the dies includes first antennas and at least one via array, wherein the at least one via array is formed between at least two of the first antennas to separate the first antennas. By the first antennas of the dies, test processes are sequentially performed on an under-test device including second antennas that positionally correspond to the first antennas, according to signal transmissions between the first antennas and the second antennas.

Abstract: An ion source having an extraction plate with a variable thickness is disclosed. The extraction plate has a protrusion on its interior or exterior surface proximate the extraction aperture. The protrusion increases the thickness of the extraction aperture in certain regions. This increases the loss area in those regions, which serves as a sink for ions and electrons. In this way, the plasma density is decreased more significantly in the regions where the extraction aperture has a greater thickness. The shape of the protrusion may be modified to achieve the desired plasma uniformity. Thus, it may be possible to create an extracted ion beam having a more uniform ion density. In some tests, the uniformity of the beam current along the width direction was improved by between 20% and 50%.

Abstract: According to one embodiment, a misalignment measuring apparatus includes: an input circuit; a storage medium; a first circuit configured to, in a first calibration pattern, calculate a second misalignment amount; a second circuit configured to, using a first image of a second calibration pattern, calculate a third misalignment amount; a third circuit configured to calculate a coefficient indicating; and a fourth circuit configured to, using a second image corresponding to the first and second patterns, calculate a third center position of a third contour and calculate the first misalignment amount between the first pattern and the second pattern based on the fourth misalignment amount and the coefficient.

Abstract: A system and method for thermally calibrating semiconductor process chambers is disclosed. In various embodiments, a first non-contact temperature sensor can be calibrated to obtain a first reading with the semiconductor process chamber. The first reading can be representative of a first temperature at a first location. The first non-contact temperature sensor can be used to obtain a second reading representative of a second temperature of an external thermal radiation source. The second temperature of the external thermal radiation source can be adjusted to a first temperature setting of the external radiation source such that the second reading substantially matches the first reading. Additional non-contact temperature sensor(s) can be directed at the external thermal radiation source and can be adjusted such that the reading(s) of the additional non-contact sensors are calibrated and matched to one another.

Abstract: Methods for integrating an image sensor and a light emitting diode (LED) leverage conformal depositions to achieve a single-sided, same height arrangement of contacts. In some embodiments, the method includes forming a plurality of cavities on a substrate where the plurality of cavities have a cavity profile and are configured to accept an emitter pixel structure or a sensor pixel structure, forming an emitter pixel structure in a cavity on the substrate where the emitter pixel structure is configured to have a plurality of exposed direct emitter contact areas on a same side and at a same height, and forming at least one sensor pixel structure in a cavity on the substrate where the sensor pixel structure is configured to have a plurality of exposed direct sensor contact areas on a same side and at a same height.

Abstract: A quantum cascade laser includes a laser structure having an output face for emitting laser light in a first direction; and a lens having an entrance surface and a convex surface, the entrance surface receiving the laser light from the output face, and the convex surface emitting the laser light after being condensed by the lens. The laser structure includes a semiconductor substrate and a mesa waveguide provided on a first region of a principal surface of the semiconductor substrate, the mesa waveguide extending in the first direction. The lens includes a semiconductor and is provided on a second region of the principal surface of the semiconductor substrate. The first region and the second region are arranged in the first direction.

Abstract: The present invention relates to an epitaxial structure of N-face group III nitride, its active device, and its gate protection device. The epitaxial structure of N-face AlGaN/GaN comprises a silicon substrate, a buffer layer (C-doped) on the silicon substrate, an i-GaN (C-doped) layer on the buffer layer (C-doped), an i-AlyGaN buffer layer on the i-GaN (C-doped) layer, an i-GaN channel layer on the i-AlyGaN buffer layer, and an i-AlxGaN layer on the i-GaN channel layer, where x=0.1˜0.3 and y=0.05˜0.75. By connecting a depletion-mode (D-mode) AlGaN/GaN high electron mobility transistor (HEMT) to the gate of a p-GaN gate enhancement-mode (E-mode) AlGaN/GaN HEMT in device design, the gate of the p-GaN gate E-mode AlGaN/GaN HEMT can be protected under any gate voltage.

Abstract: A grinding apparatus including a chuck table for holding a wafer, a grinding unit having a spindle for rotating a grinding wheel, an inclination adjusting unit for adjusting the inclination of the rotation axis of the chuck table with respect to the rotation axis of the spindle, a touch panel, and a control portion. The control portion is adapted to compare the information regarding the target sectional shape input into a target shape input field with the information regarding the present sectional shape input into a present shape input field and then control the inclination adjusting unit to change the inclination of the rotation axis of the chuck table so that the wafer is ground to obtain the target sectional shape of the wafer.

Abstract: The present disclosure provides techniques for optical inspection systems and methods for moving objects. In some embodiments, an optical inspection system includes: a first and a second image capturing device configured to acquire images from moving objects; a first and a second first-stage storage system; a first and a second second-stage processor; a second-stage storage system; a third-stage processor; and a third-stage storage system. In some embodiments, an optical inspection system, includes: a first and a second image capturing device; a first and a second volatile memory system; a first and a second second-stage processor; a third second-stage processor; and a third-stage storage system. The first and second second-stage processors can be configured to analyze the images from the image capturing devices. The third-stage processor or the third second-stage processor can be configured to process information from a processor and/or storage system and produce a report.

Abstract: A lithographic process is used to form a plurality of target structures distributed at a plurality of locations across a substrate and having overlaid periodic structures with a number of different overlay bias values distributed across the target structures. At least some of the target structures comprising a number of overlaid periodic structures (e.g., gratings) that is fewer than said number of different overlay bias values. Asymmetry measurements are obtained for the target structures. The detected asymmetries are used to determine parameters of a lithographic process. Overlay model parameters including translation, magnification and rotation, can be calculated while correcting the effect of bottom grating asymmetry, and using a multi-parameter model of overlay error across the substrate.

Abstract: A plasma processing apparatus including a processing state detection unit having: a light emission detection unit to detect light emission of the plasma; a calculation unit to obtain a differential waveform data of the light emission of the plasma; a database unit that stores a plurality of pieces of differential waveform pattern data in advance; a film thickness calculation unit to calculate an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained by the calculation unit and the plurality of pieces of differential waveform pattern data stored in the database unit; and an end point determination unit to determine an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated by the film thickness calculation unit.

Abstract: A method of manufacturing a light emitting panel, a light emitting panel, and a display device are disclosed. The method includes providing a substrate, forming a first metal layer on the substrate, performing an oxidation process to the first metal layer to form an oxide layer on the first metal layer, forming a photoresist layer on the oxide layer, patterning the photoresist layer, the oxide layer, and the substrate, and stripping a patterned photoresist layer, and sequentially forming a first passivation layer, a color resist layer, a second passivation layer, and an indium tin oxide film layer on the oxide layer.

Abstract: The embodiments of the present disclosure provide a pixel driving circuit of driving a light emitting element to emit light. The pixel driving circuit comprises: a driving sub-circuit, configured to generate a current for making the light emitting element emit light; a light emitting control sub-circuit, electrically coupled to the driving sub-circuit and a first terminal of the light emitting element; a driving control sub-circuit, electrically coupled to the driving sub-circuit, wherein the driving control sub-circuit is configured to provide the data signal to the driving sub-circuit; a resetting sub-circuit, configured to reset the first node and the first terminal of the light emitting element; and a compensation sub-circuit, electrically coupled to the first node, wherein the compensation sub-circuit is configured to receive a compensation control signal, and compensate a voltage of the first node under a control of the compensation control signal.

Abstract: A precise optical technique for measuring electronic transport properties in semiconductors is disclosed. Using tightly focused laser beams in a photo-modulated reflectance system, the modulated reflectance signal is measured as a function of the longitudinal (Z) displacement of the sample from focus. The modulated component of the reflected probe beam is a Gaussian beam with its profile determined by the focal parameters and the complex diffusion length. The reflected probe beam is collected and input to the detector, thereby integrating over the radial profile of the beam. This results in a simple analytic expression for the Z dependence of the signal in terms of the complex diffusion length. Best fit values for the diffusion length and recombination lifetime are obtained via a nonlinear regression analysis. The output diffusion lengths and recombination lifetimes and their estimated uncertainties may then be used to evaluate various transport properties and their associated uncertainties.

Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.

Abstract: The disclosure provides a method of manufacturing an encapsulation layer and a display substrate. The method of manufacturing the encapsulation layer includes: forming a strippable layer on a first region of a substrate; forming an organic material layer on a second region of the substrate, the organic material layer comprising a portion covering the second region and an overflow portion exceeding the second region and at least partially covering the first region, wherein the first region and the second region are adjoined to each other; and stripping the strippable layer from the substrate to remove the overflow portion of the organic material layer and form an organic encapsulation layer.

Abstract: In an embodiment a conversion element includes a grid having a plurality of openings, a plurality of conversion segments configured to convert a part of a primary radiation into a secondary radiation, wherein the conversion segments are arranged in the openings, wherein the conversion segments include a matrix material into which fluorescent particles are incorporated, wherein the fluorescent particles are sedimented in a sedimented layer and a semiconductor material, a plastic or a metal, wherein the grid terminates flush with the conversion segments.

Abstract: The invention relates to an apparatus (2) for detecting imaging quality of an optical system (4) with at least one lens (6) or lens group. The apparatus (2) includes an MTF measuring apparatus (10) for measuring a modulation transfer function at a plurality of field points in the field of view of the optical system (4), and a centering measuring apparatus (18) for measuring a centered state of the optical system (4).

Abstract: An embodiment method of manufacturing an avalanche diode includes forming a first trench in a substrate material, filling the first trench with a first material that comprises a dopant, and causing the dopant to diffuse from the first trench to form part of a PN junction. An avalanche diode array can be formed to include a number of the avalanche diodes.

Abstract: A semiconductor package includes a package substrate, a plurality of package terminals disposed on the bottom surface of the package substrate, and an interposer substrate disposed on the top surface of the package substrate, a plurality of interposer terminals disposed on the bottom surface of the interposer substrate and electrically connected to the package substrate, a first semiconductor chip disposed on the top surface of the interposer substrate, a second semiconductor chip disposed on the top surface of the interposer substrate and disposed to be horizontally separated from the first semiconductor chip, a first plurality of signal pads disposed on the top surface of the interposer substrate and electrically connected to wiring in the interposer substrate and one or more circuits in the first semiconductor chip, a second plurality of signal pads disposed on the top surface of the interposer substrate and electrically connected to wiring in the interposer substrate and to one or more circuits in the sec

Abstract: Implementations described herein generally relate to improving silicon wafer manufacturing. In one implementation, a method includes receiving data from one or more manufacturing tools about a manufacturing process of a silicon wafer. The method further includes determining, based on the data, predictive information about a quality of the silicon wafer. The method further includes providing the predictive information to a manufacturing system, wherein the predictive information is used to determine whether to take corrective action.

Abstract: Systems, methods, and apparatuses are disclosed herein for directing, using an optical arrangement including one or more lenses, a main beam and a leading beam toward a specimen such that the main beam is incident on the specimen at a main beam incidence and the leading beam is incident on the specimen at a leading beam incidence. The main beam intensity is greater than a leading beam intensity of the leading beam. A TDI sensor receives electromagnetic radiation from the leading beam incidence, thereby generating a first accumulated charge portion, and receives electromagnetic radiation from the main beam incidence, thereby generating a second accumulated charge portion. A processor maps the first accumulated charge portion to a first FOV, thereby yielding leading beam data, and maps the second accumulated charge portion to a second FOV, thereby yielding main beam data.

Abstract: A transfer system for transferring multiple microelements to a receiving substrate includes a main pick-up device, a testing device, and first and second carrier plates. The testing device includes a testing platform, a testing circuit, and multiple testing electrodes electrically connected to the testing circuit. The main pick-up device is operable to releasably pick up the microelements from the first carrier plate and position the microelements on the testing electrodes. The testing device is operable to test the microelements to distinguish unqualified ones of the microelements from qualified ones. The main pick-up device is operable to release the qualified ones of the microelements to the receiving substrate.

Abstract: A laser annealing apparatus (1) according to the embodiment includes: a laser beam source (11) configured to emit a laser beam (L1) to crystallize an amorphous silicon film (101a) on a substrate (100) and to form a poly-silicon film (101b); a projection lens (13) configured to condense the laser beam to irradiate a silicon film (101); a probe beam source configured to emit a probe beam (L2); a photodetector (25) configured to detect the probe beam (L3) transmitted through the silicon film (101); a processing apparatus (26) configured to calculate a standard deviation of detection values of a detection signal output from the photodetector, and to determine a crystalline state of the crystallized film based on the standard deviation.

Abstract: A system for measuring an overlay error of a sample is disclosed. The system may include a broadband illumination source configured to emit broadband illumination. The system may also include one or more optical elements configured to direct the broadband illumination to a target disposed on the sample, wherein the one or more optical elements are configured to collect illumination from the target and direct it to a spectrometer, wherein the spectrometer is configured to disperse multiple wavelengths of the illumination collected from the sample to multiple elements of a sensor to generate a plurality of signals. The system may also include a controller configured to calculate an overlay error between a first structure and a second structure of the target by comparing the plurality of signals with a plurality of calculated signals.

Abstract: Provided is a structure capable of detecting near-infrared light with good sensitivity. Also provided are a composition for forming a near-infrared transmitting filter layer used in the structure and an optical sensor capable of detecting near-infrared light with good sensitivity. This structure 101 has a support 1, a partition wall 2 provided on the support 1, and a near-infrared transmitting filter layer 11 that shields visible light and transmits at least a portion of near-infrared light, provided in a region partitioned by the partition wall 2, in which the refractive index of the partition wall 2 is smaller than the refractive index of the near-infrared transmitting filter layer 11 at at least a portion of the wavelengths of the near-infrared light transmitted by the near-infrared transmitting filter layer 11.

Abstract: A method for evaluating crystal defects by which a distribution of the crystal defects present in a silicon wafer is evaluated, includes forming an oxide film having a thickness equal to a crystal defect size to be evaluated on the silicon wafer, measuring GOI characteristics of the silicon wafer, and obtaining the distribution of the crystal defects having the crystal defect size to be evaluated in the silicon wafer from a measurement result of the GOI characteristics on a supposition that the crystal defects whose size is equivalent to the thickness of the oxide film are present in a region where the GOI characteristics are degraded. Consequently, the method for evaluating crystal defects by which a distribution of the crystal defects can be obtained even if a crystal defect size is 10 nm or less.

Abstract: Methods described herein manage wafer entry into an electrolyte so that air entrapment due to initial impact of the wafer and/or wafer holder with the electrolyte is reduced and the wafer is moved in such a way that an electrolyte wetting wave front is maintained throughout immersion of the wafer also minimizing air entrapment.

Abstract: A method of processing materials on a semiconductor workpiece using an integrated sequence of processing steps executed on a common manufacturing platform hosting a plurality of processing modules including one or more film-forming modules, one or more etching modules, and one or more transfer modules is provided. A workpiece having an upper planar surface is received into the common manufacturing platform. The method further includes conformally applying a thin film over the feature pattern using one of the film-forming modules, removing the thin film from upper surfaces of the feature pattern using one of the etching modules to leave behind the thin film in the recessed feature, and removing the fill material from the upper planar surface of the workpiece. The integrated sequence of processing steps is executed in a controlled environment within the common manufacturing platform and without leaving the controlled environment.

Abstract: A method including obtaining an image of a plurality of structures on a substrate, wherein each of the plurality of structures is formed onto the substrate by transferring a corresponding pattern of a design layout; obtaining, from the image, a displacement for each of the structures with respect to a reference point for that structure; and assigning each of the structures into one of a plurality of groups based on the displacement.

Abstract: A method is provided for separating a portion from a sheet-like glass or glass ceramic element along an intended separation line to divide the element into the portion and a main part. The method includes producing filamentary damages a volume of the glass or glass ceramic element adjacently aligned along the separation line, the filamentary damages are produced by laser pulses of a laser, the glass or glass ceramic element comprises a material that is transparent for the laser pulses; displacing incidence points of the laser pulses on a surface of the glass or glass ceramic element thereof along the separation line; and subjecting the material of the glass or glass ceramic element located in a region of the portion to a phase transition so that the material contracts to detach the portion from the main part at the adjacently aligned filamentary damages along the separation line, while the main part remains intact as a whole.

Abstract: According to the present invention, a plasma processing apparatus includes an analysis unit that obtains wavelengths of the light correlated with a plasma processing result, selects, from the obtained wavelengths, a wavelength having a first factor that represents a deviation in an intensity distribution of the light and is larger than a first predetermined value, and predicts the plasma processing result using the selected wavelength, or an analysis unit that obtains values computed using each of light intensities of a plurality of wavelengths and correlated with the plasma processing result, selects, from the obtained values, a value having a second factor that represents a deviation in a distribution of the obtained values and is larger than a second predetermined value, and predicts the plasma processing result using the selected value.

Abstract: An assembly used in a process chamber for depositing a film on a wafer and including a pedestal extending from a central axis. An actuator is configured for controlling movement of the pedestal. A central shaft extends between the actuator and pedestal, the central shaft configured to move the pedestal along the central axis. A lift pad is configured to rest upon the pedestal and having a pad top surface configured to support a wafer placed thereon. A pad shaft extends between the actuator and the lift pad and controls movement of the lift pad. The pad shaft is positioned within the central shaft and is configured to separate the lift pad from the pedestal top surface by a process rotation displacement when the pedestal is in an upwards position. The pad shaft is configured to rotate relative to the pedestal top surface between first and second angular orientations.

Abstract: A method is provided for separating a portion from a sheet-like glass or glass ceramic element along an intended separation line to divide the element into the portion and a main part. The method includes producing filamentary damages a volume of the glass or glass ceramic element adjacently aligned along the separation line, the filamentary damages are produced by laser pulses of a laser, the glass or glass ceramic element comprises a material that is transparent for the laser pulses; displacing incidence points of the laser pulses on a surface of the glass or glass ceramic element thereof along the separation line; and subjecting the material of the glass or glass ceramic element located in a region of the portion to a phase transition so that the material contracts to detach the portion from the main part at the adjacently aligned filamentary damages along the separation line, while the main part remains intact as a whole.

Abstract: A system, a computer program product, and method for physically fabricating an electronic circuit using design space exploration as part of a design process is described. The method begins with defining a plurality of design space parameters to be tuned along with parameter ranges for each of the plurality of design space parameters. Next an output target to be optimized is defined. A series of one or more test mask shapes are generated to appear on a photo mask using the plurality of design space parameters. A simulation of a post lithography or etch on the series of one or more test mask shapes is performed to produce simulation output values. Next, the simulation output values and corresponding design space parameters are fed into to a Bayesian inference algorithm for assessment and identification of a next combination of design space parameters to investigate.

Abstract: Substrates with lenses having lenses disposed therein are aligned with high accuracy. A stacked lens structure has a configuration in which substrates with lenses having a lens disposed on an inner side of a through-hole formed in the substrate are direct-bonded and stacked based on an alignment mark. The alignment mark is formed simultaneously with the through-hole. The present technique can be applied to a camera module or the like in which a stacked lens structure in which at least three substrates with lenses including first to third substrates with lenses which are substrates with lenses in which a through-hole is formed in the substrate and a lens is formed on an inner side of the through-hole is integrated with a light receiving element, for example.

Abstract: A method of aligning a plate containing a substrate is disclosed wherein multiple cameras with distinct fields of view are aligned with mark cells that are within the field of view of each of the multiple cameras.

Abstract: A budget-management-data creating method by a computer includes: accepting designation of a brand for which budget management data is to be created and a total budget amount; creating budget amounts for respective partial periods in a predetermined period, by automatically allocating the total budget amount to the respective partial periods, based on past sales performance data of the designated brand; displaying the created budget amounts to enable acceptance of a correction instruction; proportionally distributing upon accepting a correction of one of the budget amounts, a budget amount reflecting the correction and corresponding to the respective partial periods, the budget amount being proportionally distributed according to a sales ratio of respective item categories corresponding to the brand, the sales ratio corresponding to a corresponding past partial period; and displaying as a budget amount for each of the respective item categories for the respective partial periods, a result of the proportionally

Abstract: Methods and systems may be configured to integrate data from fixed nondestructive inspection sensors positioned on a test specimen and data from laser ultrasound scans of the test specimen, in order to monitor and track damage and stress indications in the test specimen in real-time during mechanical stress testing of the test specimen. Data from the laser ultrasound scans may identify emergent areas of interest within the test specimen that were not predicted by stress analysis, and further allow for reconfiguration of the test plan in view of the emergent areas of interest, without having the stop the test. Laser ultrasound scans may be performed on the entire test specimen, with high-resolution scans being performed on emergent areas of interest. Thus, stress indications, or stress effects, in the test specimen may be measured, identified, and tracked in real-time (e.g., as growth is propagating) in a test specimen undergoing structural tests.

Abstract: An optimized measurement recipe is determined by reducing the set of measurement technologies and ranges of machine parameters required to achieve a satisfactory measurement result. The reduction in the set of measurement technologies and ranges of machine parameters is based on available process variation information and spectral sensitivity information associated with an initial measurement model. The process variation information and spectral sensitivity information are used to determine a second measurement model having fewer floating parameters and less correlation among parameters. Subsequent measurement analysis is performed using the second, constrained model and a set of measurement data corresponding to a reduced set of measurement technologies and ranges of machine parameters.

Abstract: A method of backside illuminated image sensor fabrication includes forming a plurality of photodiodes in a semiconductor material, where the plurality of photodiodes are disposed to receive image light through a backside of the backside illuminated image sensor. The method further includes forming a transfer gate coupled to extract image charge from a photodiode in the plurality of photodiodes, and forming a storage gate coupled to the transfer gate to receive the image charge. Forming the storage gate includes forming an optical shield in the semiconductor material; depositing a gate electrode proximate to a frontside of the semiconductor material; and implanting a storage node in the semiconductor material, where the storage node is disposed in the semiconductor material between the optical shield and the gate electrode.

Abstract: A measurement method for a laminate substrate is provided. The laminate substrate has: a base substrate; an absorption layer; and a measurement-target layer in this order. The measurement-target layer has a single measurement-target monolayer or a plurality of measurement-target monolayers. The method includes: emitting incident light including light with a wavelength shorter than a threshold wavelength from a side on which the measurement-target layer is positioned, and measuring reflected light and acquiring mutually independent 2n (n is a layer count of the measurement-target monolayers included in the measurement-target layer and is an integer equal to one or larger) or more reflected light-related values for wavelengths equal to the threshold wavelength or shorter; and calculating values related to the measurement-target monolayers for each measurement-target monolayer included in the measurement-target layer using the 2n or more reflected light-related values.

Abstract: An electronic device comprising a semiconductor memory unit that includes a resistance variable element formed over a substrate, and including stacked therein a bottom electrode, a variable resistance layer and a top electrode, and a barrier layer formed over the resistance variable element, and including an amorphous silicon layer which is doped with at least one kind of impurity.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer. The third semiconductor is provided between the first semiconductor layer and the second semiconductor layer. A first transistor includes a first gate electrode and a first amorphous semiconductor layer. The first gate electrode and the first amorphous semiconductor layer overlap in a first direction. The first direction is from the first semiconductor layer toward the second semiconductor layer. The first gate electrode is provided between the second semiconductor layer and the first amorphous semiconductor layer.

Abstract: Alignment of layers during manufacture of a multi-layer sample is controlled by applying optical measurements to a measurement site in the sample. The measurement site includes two diffractive structures located one above the other in two different layers, respectively. The optical measurements include at least two measurements with different polarization states of incident light, each measurement including illuminating the measurement site so as to illuminate one of the diffractive structures through the other. The diffraction properties of the measurement site are indicative of a lateral shift between the diffractive structures. The diffraction properties detected are analyzed for the different polarization states of the incident light to determine an existing lateral shift between the layers.

Abstract: A laser welding method is capable of easily restraining poor welding when spatters adhere to a protective glass of an optical system. The laser welding method includes a step of calculating a decrease-amount of the laser power before laser welding is performed by irradiating a welding portion of a workpiece with the laser beam having a predetermined power. The step of calculating the decrease-amount includes irradiating the welding portion with an inspecting laser beam having a power smaller than the predetermined power, receiving a return beam of the inspecting laser beam, measuring an intensity of the return beam, and comparing the intensity of the return beam with a standard intensity to calculate an amount of decrease in power of the inspecting laser beam at the welding portion.

Abstract: Improved processes for manufacturing wafers, chips, or dies utilize in-line data obtained from non-contact electrical measurements (“NCEM”) of fill cells that contain structures configured to target/expose a variety of open-circuit, short-circuit, leakage, or excessive resistance failure modes, including GATE-snake-open and/or GATE-snake-resistance failure modes. Such processes may involve evaluating Designs of Experiments (“DOEs”), comprised of multiple NCEM-enabled fill cells, in at least two variants, all targeted to the same failure mode(s).

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-containing amorphous carbon films on a substrate with reduced particle contamination. In one implementation, the method comprises flowing a hydrocarbon-containing gas mixture into a processing volume having a substrate positioned therein, flowing a boron-containing gas mixture into the processing volume, stabilizing the pressure in the processing volume for a predefined RF-on delay time period, generating an RF plasma in the processing volume after the predefined RF-on delay time period expires to deposit a boron-containing amorphous film on the substrate, exposing the processing volume of the process chamber to a dry cleaning process and depositing an amorphous boron season layer over at least one surface in the processing volume of the process chamber.

Abstract: Substrate temperature control apparatus including optical fiber temperature control are described. Substrate temperature control apparatus includes a base, a thermal contact member proximate to the base, and a plurality of optical fibers adapted to provide light-based heating extending laterally between the base and thermal contact member. Substrate temperature control systems and electronic device processing systems and methods including optical fiber temperature control are described, as are numerous other aspects.

Abstract: The present invention provides an exposure system including a light source and a carrier which are arranged opposite to each other. The carrier is used for placing a to-be-exposed film, and the to-be-exposed film is to be exposed to light emitted from the light source. The exposure system further includes a thickness measurement unit and a light intensity adjustment unit which are electrically connected to each other. The thickness measurement unit is used for measuring thicknesses of different regions of the to-be-exposed film, and the light intensity adjustment unit is used for adjusting exposure-light intensities of different regions of the to-be-exposed film according to the thicknesses of corresponding regions of the to-be-exposed film measured by the thickness measurement unit.