Abstract: A semiconductor device includes a gate structure on a substrate, in which the gate structure includes a main branch extending along a first direction on the substrate and a sub-branch extending along a second direction adjacent to the main branch. The semiconductor device also includes a first doped region overlapping the main branch and the sub-branch according to a top view and a second doped region overlapping the first doped region.

Abstract: The present invention discloses a method for preparing a semiconductor sample for failure analysis, which is characterized by using an adhesive layer comprising a non-volatile and non-liquid adhesive material with higher adhesion to the dielectric materials and lower adhesion to the metallic contact materials to selectively remove part of the dielectric materials in a large area with high uniformity, but completely remain the metallic contact materials, and not chemically react with the semiconductor specimens or even damage to the structures of interest to be analyzed, and different adhesive materials can be selected as the adhesive layer to control the adhesion to the dielectric layer, thereby the removed thickness of the dielectric layer can be controlled to provide a semiconductor specimen for failure analysis.

Abstract: A vertical memory structure comprises a stack of alternating layers of insulator material and word line material with a vertical opening through the alternating layers. One of the layers of insulating material and layers of word line material have recessed inside surfaces facing the opening. First and second conductive pillars are disposed inside the vertical opening. A data storage structure is disposed on the inside surfaces of the layers of word line material, including on the recessed inside surfaces. A semiconductor channel layer is disposed on the data storage structures around a perimeter of the vertical opening, and having first and second source/drain terminals at contacts with the first and second conductive pillars.

Abstract: The present disclosure describes a method for the fabrication of ruthenium conductive structures over cobalt conductive structures. In some embodiments, the method includes forming a first opening in a dielectric layer to expose a first cobalt contact and filling the first opening with ruthenium metal to form a ruthenium contact on the first cobalt contact. The method also includes forming a second opening in the dielectric layer to expose a second cobalt contact and a gate structure and filling the second opening with tungsten to form a tungsten contact on the second cobalt contact and the gate structure. Further, the method includes forming a copper conductive structure on the ruthenium contact and the tungsten contact, where the copper from the copper conductive structure is in contact with the ruthenium metal from the ruthenium contact.

Abstract: A semiconductor device includes a core gate and a pair of isolation gates. The core gate has a first stack of two or more layers, the first stack including at least (i) a first dielectric layer having a first thickness and (ii) a first electrode layer. The isolation gates are formed on first and second sides of the core gate. The isolation gates are configured to electrically isolate the core gate. At least one of the isolation gates has a second stack of two or more layers, the second stack including at least (i) a second dielectric layer having a second thickness greater than the first thickness and (ii) a second electrode layer.

Abstract: According to one embodiment, a semiconductor device includes an element region, an element isolation region adjacent to the element region, a gate insulating layer provided on an upper surface of the element region, and a gate electrode including a semiconductor layer, the semiconductor layer containing boron (B) and including a portion provided on the gate insulating layer, the element isolation region including an upper portion including an upper surface of the element isolation region and a lower portion including a lower surface of the element isolation region, and the upper portion of the element isolation region applying compressive stress to a portion of the element region, which is adjacent to the upper portion of the element isolation region.

Abstract: A semiconductor device in which sufficient stress can be applied to a channel region due to lattice constant differences.

Abstract: An antifuse One-Time-Programmable memory cell includes a substrate, a select transistor, and an antifuse capacitor. The select transistor includes a first high-voltage junction formed in the substrate and a first low-voltage junction formed in the substrate. The antifuse capacitor includes a second high-voltage junction formed in the substrate and a second low-voltage junction formed in the substrate.

Abstract: The disclosed embodiments provide a system that facilitates the processing of network data. During operation, the system causes for display a graphical user interface (GUI) for configuring the generation of time-series event data from network packets captured by one or more remote capture agents. Next, the system causes for display, in the GUI, a first set of user-interface elements containing a set of statistics associated with one or more event streams that comprise the time-series event data. The system then causes for display, in the GUI, one or more graphs comprising one or more values from the set of statistics. Finally, the system causes for display, in the GUI, a value of a statistic from the set of statistics based on a position of a cursor over the one or more graphs.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a fin. A gate dielectric layer is over the top of the fin and laterally adjacent the sidewalls of the fin. A gate electrode is over the gate dielectric layer over the top of the fin and laterally adjacent the sidewalls of the fin. First and second semiconductor source or drain regions are adjacent the first and second sides of the gate electrode, respectively. First and second trench contact structures are over the first and second semiconductor source or drain regions, respectively, the first and second trench contact structures both comprising a U-shaped metal layer and a T-shaped metal layer on and over the entirety of the U-shaped metal layer.

Abstract: A semiconductor power device and a manufacturing method thereof are provided. In the manufacturing method, before the self-aligned silicide process is performed, a gate stacked structure and a spacer are formed on a semiconductor layer having a body region and a source region. The spacer defines a portion of the source region for forming a silicide layer. Subsequently, the self-aligned silicide process is performed with the gate stacked structure and the spacer functioning as a mask to form the silicide layer at the defined portion of the source region. Thereafter, an interconnection structure including an interlayer dielectric layer and a source conductive layer is formed on the semiconductor layer. The source conductive layer is electrically connected to the source region. The silicide layer extends toward the gate stacked structure from a position under the source conductive layer to another position under the interlayer dielectric layer.

Abstract: A semiconductor device including, in cross section, a semiconductor substrate; a gate insulating film on the semiconductor substrate; a gate electrode on the gate insulating film, the gate electrode including a metal, a side wall insulating film at opposite sides of the gate electrode, the side wall insulating film contacting the substrate; a stress applying film at the opposite sides of the gate electrode and over at least a portion of the semiconductor substrate, at least portion of the side wall insulating film being between the gate insulating film and the stress applying film and in contact with both of them; source/drain regions in the semiconductor substrate at the opposite sides of the gate electrode, and silicide regions at surfaces of the source/drain regions at the opposite sides of the gate electrode, the silicide regions being between the source/drain regions and the stress applying layer and in contact with the stress applying layer.

Abstract: A semiconductor device includes a semiconductor substrate, a dielectric feature and an epitaxy feature. The epitaxy feature is on the semiconductor substrate. The epitaxy feature has a top central portion and a corner portion. The dielectric feature is closer to the corner portion than the top central portion, and the corner portion has an impurity concentration higher than that of the top central portion.

Abstract: Embodiments described in this disclosure relate to formation of a gate structure of a device, such as in a replacement gate process, and the device formed thereby. In some examples, after an interfacial layer and a gate dielectric layer are deposited, a rapid anneal process, such as laser anneal or flash lamp anneal process, is performed in a controlled ambient nitrogen-containing environment to form a nitrided portion in the gate dielectric layer. The nitrided portion passivates the defects at the surface of the gate dielectric layer and can serve as a barrier to prevent etchant chemistry and defects/dopants from the subsequent gate stack layers from affecting or diffusing through the gate dielectric layer. Particularly, the rapid anneal process is performed on a millisecond scale to confine nitrogen atoms in the gate dielectric layer without diffusing into the underlying interfacial dielectric and/or any neighboring structure such as fin.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a substrate, at least two gate structures disposed over the substrate, each of the at least two gate structures including a gate electrode and a spacer disposed along sidewalls of the gate electrode, wherein the spacer includes a refill portion and a bottom portion, the refill portion of the spacer has a funnel shape such that a top surface of the refill portion of the spacer is larger than a bottom surface of the refill portion of the spacer, and a source/drain contact disposed over the substrate and between the spacers of the at least two gate structures.

Abstract: Methods and apparatus for polysilicon MOS capacitors in a replacement gate process. A method includes disposing a gate dielectric layer over a semiconductor substrate; disposing a polysilicon gate layer over the dielectric layer; patterning the gate dielectric layer and the polysilicon gate layer to form a plurality of polysilicon gates spaced by at least a minimum polysilicon to polysilicon pitch; defining a polysilicon resistor region containing at least one of the polysilicon gates and not containing at least one other of the polysilicon gates, which form dummy gates; depositing a mask layer over an inter-level dielectric layer; patterning the mask layer to expose the dummy gates; removing the dummy gates and the gate dielectric layer underneath the dummy gates to leave trenches in the inter-level dielectric layer; and forming high-k metal gate devices in the trenches in the inter-level dielectric layer. An apparatus produced by the method is disclosed.

Abstract: The alignment mark and method for making the same are described. In one embodiment, a semiconductor structure includes a plurality of gate stacks formed on the semiconductor substrate and configured as an alignment mark; doped features formed in the semiconductor substrate and disposed on sides of each of the plurality of gate stacks; and channel regions underlying the plurality of gate stacks and free of channel dopant.

Abstract: A FinFET device and method of forming the same are disclosed. The method includes forming a gate dielectric layer and depositing a metal oxide layer over the gate dielectric layer. The method also includes annealing the gate dielectric layer and the metal oxide layer, causing ions to diffuse from the metal oxide layer to the gate dielectric layer to form a doped gate dielectric layer. The method also includes forming a work function layer over the doped gate dielectric layer, and forming a gate electrode over the work function layer.

Abstract: A resistive memory includes a semiconductor substrate, a dielectric layer, an insulating layer and a metal electrode layer. The semiconductor substrate has a top surface and a recess extending downwards into the semiconductor substrate from the top surface. The dielectric layer is disposed on the semiconductor substrate and has a first through-hole aligning the recess. The insulating layer is disposed in the first through-hole and the recess. The metal electrode layer is disposed on the insulating layer by which the metal electrode layer is isolated from the semiconductor substrate.

Abstract: An integrated circuit device includes a substrate, first and second fin active regions formed on the substrate and extending in a first direction parallel to a top surface of the substrate, a first gate structure disposed on a side surface of the first fin active region, a pair of first impurity regions respectively formed on a top portion and a bottom portion of the first fin active region, a second gate structure disposed on a side surface of the second fin active region, and a pair of second impurity regions respectively formed on a top portion or a bottom portion of the second fin active region, wherein the pair of first impurity regions vertically overlap each other, and the pair of second impurity regions do not vertically overlap each other.

Abstract: A finFET device and methods of forming a finFET device are provided. The method includes forming a first gate spacer is formed over a dummy gate of a fin field effect transistor (finFET). The method also includes performing a carbon plasma doping of the first gate spacer. The method also includes forming a plurality of source/drain regions, where a source/drain region is disposed on opposite sides of the dummy gate. The method also includes removing dummy gate.

Abstract: An integrated circuit and method having a first PMOS transistor with extension and pocket implants and with SiGe source and drains and having a second PMOS transistor without extension and without pocket implants and with SiGe source and drains. The distance from the SiGe source and drains to the gate of the first PMOS transistor is greater than the distance from the SiGe source and drains to the gate of the second PMOS transistor and the turn on voltage of the first PMOS transistor is at least 50 mV higher than the turn on voltage of the second PMOS transistor.

Abstract: A semiconductor device includes a first semiconductor channel, a second semiconductor channel, a first gate stack and a second gate stack. The first gate stack is present on the first semiconductor channel. The second gate stack is present on the second semiconductor channel. The first gate stack and the second gate stack are different at least in tantalum nitride amount.

Abstract: Disclosed are performance-enhanced vertical devices (e.g., vertical field effect transistors (FETs) or complementary metal oxide semiconductor (CMOS) devices, which incorporate vertical FETs) and methods of forming such devices. A strained dielectric layer is positioned laterally adjacent to the gate of a vertical FET, increasing the charge carrier mobility within the channel region and improving performance. In a vertical n-type FET (NFET), the strain is compressive to improve electron mobility given the direction of current within the vertical NFET; whereas, in a vertical p-type FET (PFET), the strain is tensile to improve hole mobility given the direction of current within the vertical PFET. Optionally, the orientation of a vertical FET relative to the surface plane of the semiconductor wafer on which it is formed is also preplanned as function of the type of FET (i.e., NFET or PFET) for optimal charge carrier mobility and, thereby enhanced performance.

Abstract: A semiconductor device and method of fabricating thereof is described that includes a substrate including at least one fin, at least one gate stack formed on a top surface of the at least one fin, a first inter-layer dielectric (ILD) layer formed on the top surface of the at least one fin, and a strained layer formed at least on a top surface of the at least one gate stack, wherein the strained layer is configured to provide a strain force to the at least one gate stack.

Abstract: A semiconductor device includes a first semiconductor channel, a second semiconductor channel, a first gate stack and a second gate stack. The first gate stack is present on the first semiconductor channel. The first gate stack includes a first work function layer and a first interposing layer present between the first semiconductor channel and the first work function layer. The second gate stack is present on the second semiconductor channel. The second gate stack includes a second work function layer and a second interposing layer present between the second semiconductor channel and the second work function layer. The first interposing layer and the second interposing layer are different at least in tantalum nitride amount.

Abstract: Methodologies for patterning and implantation are provided Embodiments include forming fins; forming an SiN over the fins; forming an a-Si layer over the SiN; forming and patterning a first patterning layer over the a-Si layer; etching through the a-Si layer using the first patterning layer as a mask; removing the first patterning layer; implanting ions in exposed groups of fins; forming and patterning a second patterning layer to expose a first group of fins and a portion of the a-Si layer on opposite sides of the first group of fins; implanting ions in a first region of the first group of fins; forming a third patterning layer over the first region of the first group of fins and exposing a second region of the first group of fins; and implanting ions in the second region of the first group of fins.

Abstract: A semiconductor device includes: a sidewall insulating film; a gate electrode; source and drain regions; a first stress film; and a second stress film.

Abstract: An improved transistor with channel epitaxial silicon. In one aspect, a method of fabrication includes: forming a gate stack structure on an epitaxial silicon region disposed on a substrate, a width dimension of the epitaxial silicon region approximating a width dimension of the gate stack structure; and growing a raised epitaxial source and drain from the substrate, the raised epitaxial source and drain in contact with the epitaxial silicon region and the gate stack structure. For a SRAM device, further: removing an epitaxial layer in contact with the silicon substrate and the raised source and drain and to which the epitaxial silicon region is coupled leaving a space above the silicon substrate and under the raised epitaxial source and drain; and filling the space with an insulating layer and isolating the raised epitaxial source and drain and a channel of the transistor from the silicon substrate.

Abstract: An improved transistor with channel epitaxial silicon and methods for fabrication thereof. In one aspect, a method for fabricating a transistor includes: forming a gate stack structure on an epitaxial silicon region, a width dimension of the epitaxial silicon region approximating a width dimension of the gate stack structure; encapsulating the epitaxial silicon region under the gate stack structure with sacrificial spacers formed on both sides of the gate stack structure and the epitaxial silicon region; forming a channel of the transistor having a width dimension that approximates that of the epitaxial silicon region and the gate stack structure, the epitaxial silicon region and the gate stack structure formed on the channel of the transistor; removing the sacrificial spacers; and growing a raised epitaxial source and drain from the silicon substrate, with portions of the raised epitaxial source and drain in contact with the epitaxial silicon region.

Abstract: A method of preventing contact metal from protruding into neighboring gate devices to affect work functions of the neighboring gate devices is provided includes forming a gate structure. Forming the gate structure includes forming a work function layer, and forming a gate metal layer having a void, wherein the work function layer surrounds the gate metal layer. The method further includes forming a contact plug having a contact metal directly on the gate metal layer of the first gate stack, wherein the contact metal protrudes into the void, and the work function layer prevents the contact metal from protruding into a second gate stack.

Abstract: A semiconductor device includes a gate electrode formed on a silicon substrate via a gate insulation film in correspondence to a channel region, source and drain regions of a p-type diffusion region formed in the silicon substrate at respective outer sides of sidewall insulation films of the gate electrode, and a pair of SiGe mixed crystal regions formed in the silicon substrate at respective outer sides of the sidewall insulation films in epitaxial relationship to the silicon substrate, the SiGe mixed crystal regions being defined by respective sidewall surfaces facing with each other, wherein, in each of the SiGe mixed crystal regions, the sidewall surface is defined by a plurality of facets forming respective, mutually different angles with respect to a principal surface of the silicon substrate.

Abstract: Embodiments are directed to a method of forming portions of a fin-type field effect transistor (FinFET). The method includes forming at least one fin, and forming a dielectric layer over at least a portion of the at least one fin. The method further includes forming a work function layer over at least a portion of the dielectric layer. The method further includes forming a source region or a drain region adjacent the at least one fin, and performing an anneal operation, wherein the anneal operation anneals the dielectric layer and either the source region or the drain region, and wherein the work function layer provides a protection function to the at least a portion of the dielectric layer during the anneal operation.

Abstract: To enhance reliability and performance of a semiconductor device that has a fully-depleted SOI transistor, while a width of an offset spacer formed on side walls of a gate electrode is configured to be larger than or equal to a thickness of a semiconductor layer and smaller than or equal to a thickness of a sum total of a thickness of the semiconductor layer and a thickness of an insulation film, an impurity is ion-implanted into the semiconductor layer that is not covered by the gate electrode and the offset spacer. Thus, an extension layer formed by ion implantation of an impurity is kept from entering into a channel from a position lower than the end part of the gate electrode.

Abstract: First protective films are formed to cover side surfaces of gate electrode portions. In an nMOS region, an extention implantation region is formed by causing a portion of the first protective film located on the side surface of the gate electrode portion to function as an offset spacer and using the offset spacer as a mask, and then, cleaning is done. Since silicon nitride films are formed on surfaces of the first protective films, the resistance to chemical solutions is improved. Furthermore, second protective films are formed on the first protective films, respectively. In a pMOS region, an extention implantation region is formed by causing a portion of the first protective film and a portion of the second protective film located on the side surface of the gate electrode portion to function as an offset spacer and using the offset spacer as the mask, and then, cleaning is done.

Abstract: An integrated circuit containing metal replacement gates may be formed by forming a nitrogen-rich titanium-based barrier between a high-k gate dielectric layer and a metal work function layer of a PMOS transistor. The nitrogen-rich titanium-based barrier is less than 1 nanometer thick and has an atomic ratio of titanium to nitrogen of less than 43:57. The nitrogen-rich titanium-based barrier may be formed by forming a titanium based layer over the gate dielectric layer and subsequently adding nitrogen to the titanium based layer. The metal work function layer is formed over the nitrogen-rich titanium-based barrier.

Abstract: A method comprises growing a channel layer comprising a first channel region and a second channel region, depositing a first hard mask layer over the channel layer, patterning the first hard mask layer, applying a first delta doping process to the first channel region to form a first delta doping layer over the first channel region, depositing a first cap layer over the first delta doping layer, depositing a second hard mask layer over the channel layer, wherein the first cap layer is embedded in the second hard mask layer, patterning the second hard mask layer and the first hard mask layer to expose the second channel region, applying a second delta doping process to the second channel region to form a second delta doping layer over the second channel region and applying a first diffusion process to the first delta doping layer and the second delta doping layer.

Abstract: A method is provided for fabricating a semiconductor device. The method includes providing a semiconductor substrate; and forming a first gate structure on the semiconductor substrate. The method also includes forming offset spacers doped with a certain type of ions to increase an anti-corrosion ability of the offset spacers on both sides of the first gate structure by a stability doping process; and forming trenches in the semiconductor substrate at both sides of the first gate structures. Further, the method includes forming stress layers in the trenches.

Abstract: In patterning a transistor, some of a layer of gate dielectric material is allowed to remain over a semiconductor substrate upon which the transistor is formed. This remaining dielectric material retards the implantation of dopants into the underlying substrate, effectively lengthening a channel region of the transistor. This mitigates unwanted short channel effects, such as leakage currents, for example, and thus mitigates yield loss by establishing a transistor that performs in a more predictable or otherwise desirable manner.

Abstract: In a method for fabricating a semiconductor device, a first gate electrode and a second gate electrode are provided on a substrate, the first gate electrode and the second gate electrode being formed in a first region and a second region of the substrate, respectively. A conductive buffer layer is formed along sidewalls of the first gate electrode and the second gate electrode and on upper surfaces of the first gate electrode and second gate electrode. A first mask pattern covering the first region of the substrate on the buffer layer is formed. A first impurity region is formed in the substrate at sides of the second gate electrode using the first mask pattern as a mask of an ion implantation process.

Abstract: A TFT substrate includes: a substrate; and a plurality of TFTs, wherein each of the TFTs comprises: a gate electrode, disposed on the substrate; a gate insulating layer, disposed on the substrate and covering the gate electrode; a metallic oxide active layer, disposed on the gate insulating layer; a metallic oxide protection layer, disposed on the metallic oxide active layer; an etching stop layer, disposed on the metallic oxide protection layer, wherein a first through hole and a second through hole penetrate through the etching stop layer and the metallic oxide protection layer; and a source electrode and a drain electrode, disposed in the first through hole and the second through hole respectively, and electrically connected to the metallic oxide active layer.

Abstract: The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a trench in the substrate, where a bottom surface of the trench has a first crystal plane orientation and a side surface of the trench has a second crystal plane orientation, and epitaxially (epi) growing a semiconductor material in the trench. The epi process utilizes an etch component. A first growth rate on the first crystal plane orientation is different from a second growth rate on the second crystal plane orientation.

Abstract: Embodiments of a method for forming a semiconductor device structure are provided. The method includes forming a gate stack over a semiconductor substrate and forming a sealing structure over a sidewall of the gate stack. The method also includes forming a dummy shielding layer over the semiconductor substrate, the sealing structure, and the gate stack. The method further includes performing an ion implantation process on the dummy shielding layer to form source and drain regions in the semiconductor substrate. In addition, the method includes removing the dummy shielding layer after the source and drain regions are formed.

Abstract: A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.

Abstract: A dielectric material layer is deposited on gate structures of first and second semiconductor material portions. The dielectric material layer is anisotropically etched to form a first gate spacer on a first semiconductor material portion, while being protected above the second semiconductor material portion. After formation of first raised active regions on the first semiconductor material portion, a dielectric stack of a dielectric oxide liner and a dielectric nitride liner is formed. The dielectric stack is removed over the second semiconductor material portion and a second gate spacer is formed on the second semiconductor material portion, while the dielectric stack protects the first raised active regions. A second gate spacer is formed by anisotropically etching the dielectric material layer over the second semiconductor material portion. The first and second gate spacers have the same composition and thickness. Second raised active regions can be formed on the second semiconductor material portion.

Abstract: Devices and methods for forming semiconductor devices with FinFETs are provided. One intermediate semiconductor device includes, for instance: a substrate with at least one fin with at least one channel; at least one gate over the channel; at least one hard-mask over the gate; and at least one spacer disposed over the gate and hard-mask. One method includes, for instance: obtaining an intermediate semiconductor device; forming at least one recess into the substrate, the recess including a bottom and at least one sidewall exposing a portion of the at least one fin; depositing a dielectric layer into the at least one recess; removing at least a portion of the dielectric layer to form a barrier dielectric layer; and performing selective epitaxial growth in the at least one recess over the barrier dielectric layer.

Abstract: A semiconductor device and a method of manufacturing the same is disclosed. In one aspect, the method comprises forming a first MOSFET having a first gate length in a semiconductor substrate, and forming a second MOSFET having a second gate length in the semiconductor substrate. Furthermore, the second gate length is less than the first gate length, and wherein the second MOSFET has a gate stack in the form of a spacer having a gate conductor and a gate dielectric isolating the gate conductor from the semiconductor substrate.

Abstract: A stack of a gate dielectric layer and a workfunction material layer are deposited over a plurality of semiconductor material portions, which can be a plurality of semiconductor fins or a plurality of active regions in a semiconductor substrate. A first gate conductor material applying a first stress is formed on a first portion of the workfunction material layer located on a first semiconductor material portion, and a second gate conductor material applying a second stress is formed on a second portion of the workfunction material layer located on a second semiconductor material portion. The first and second stresses are different in at least one of polarity and magnitude, thereby inducing different strains in the first and second portions of the workfunction material layer. The different strains cause the workfunction shift differently in the first and second portions of the workfunction material layer, thereby providing devices having multiple different workfunctions.

Abstract: An asymmetrical field effect transistor (FET) device includes a semiconductor substrate, a buried oxide layer disposed on the semiconductor substrate, an extended source region disposed on the buried oxide layer and a drain region disposed on the buried oxide layer. The asymmetrical FET device also includes a silicon on insulator region disposed between the extended source region and the drain region and a gate region disposed above the extended source region and the silicon on insulator region.

Abstract: A semiconductor chip having a P? substrate and an N+ epitaxial layer grown on the P? substrate is shown. A P? circuit layer is grown on top of the N+ epitaxial layer. A first moat having an electrically quiet ground connected to a first N+ epitaxial region is created by isolating the first N+ epitaxial region with a first deep trench. The first moat is surrounded, except for a DC path, by a second moat with a second N+ epitaxial region, created by isolating the second N+ epitaxial region with a second deep trench. The second moat may be arranged as a rectangular spiral around the first moat.