Abstract: An organic light emitting diode (OLED) display panel includes a substrate, a reflective electrode disposed on the substrate, and a pixel define layer (PDL) formed on the substrate and the reflective electrode layer. The reflective electrode layer has multiple reflective structures, and each reflective structure has a first region and a second region. The PDL is provided with multiple openings corresponding to the reflective structures, such that the first region and the second region of each of the reflective structures are exposed in a corresponding one of the openings. Multiple organic emissive structures are correspondingly formed in the openings and covering the reflective structures, forming a plurality of pixels. For each respective pixel of the pixels, a first reflective ratio of the respective pixel corresponding to the first region is greater than a second reflective ratio of the respective pixel corresponding to the second region.

Abstract: Provided is a method for manufacturing an inorganic material having a tensile stress, which includes: forming an inorganic stressor from an inorganic wafer made of an inorganic matter; forming an inorganic layer on the inorganic stressor; and etching a bulk inorganic matter at a lower portion of the inorganic stressor to generate an inorganic material having a tensile stress, wherein the inorganic layer has a tensile stress by etching the bulk inorganic matter to relieve a compressive stress applied to the inorganic stressor when the inorganic stressor is being formed. Therefore, FET and various circuits having higher charge mobility may be realized, and also, since characteristics may be maintained even when being applied to a plastic substrate, high performance flexible electronic device may be manufactured.

Abstract: A pixel array substrate including a substrate, an active device, a planarization layer, a first conductive layer, a first insulation layer and a second conductive layer is provided. The active device is disposed on the substrate. The planarization layer covers the active device and has a first opening. The first conductive layer is disposed on the planarization layer and is electrically connected with a first end of the active device. The first insulation layer is disposed on the first conductive layer. The second conductive layer is disposed on the first insulation layer. The first conductive layer and the second conductive layer cover a side surface of the first opening of the planarization layer.

Abstract: A method of manufacturing an etched glass article includes the steps of jetting an image with a UV curable inkjet ink on a surface of the glass article; UV curing the image; etching the surface not covered by the UV cured image to obtain an etched image; and removing the UV cured image in an aqueous alkaline solution; wherein the UV curable inkjet ink includes a polymerizable composition, wherein at least 80 wt % of the polymerizable composition consists of: a) 15.0 to 70.0 wt % of an acryl amide; b) 20.0 to 75.0 wt % of a polyfunctional acrylate; and c) 1.0 to 15.0 wt % of a (meth)acrylate containing a carboxylic acid group, a phosphoric acid group or a phosphonic acid group-; with all weight percentages (wt %) based on the total weight of the polymerizable composition.

Abstract: An antenna apparatus includes a dielectric substrate, a base plate, an antenna unit, and a reflecting unit. A plurality of conductor patches are structured to resonate, at an operating frequency of the antenna unit, in a resonating direction which is different from a polarization direction Dan of a radio wave transmitted and received by the antenna unit.

Abstract: A semiconductor nanocrystal and a preparation method thereof, where the semiconductor nanocrystal include a bare semiconductor nanocrystal and a water molecule directly bound to the bare semiconductor nanocrystal.

Abstract: The present invention relates to a light converting device (11) comprising a solid state light source (2) and a wavelength converting layer (3) arranged to at least partly wavelength convert the light emitted, in use, by the solid state light source (2), the wavelength converting layer (3) having a back side (4) facing the solid state light source (2) and a front side (5) opposite the back side (4), wherein the front side (5) of the wavelength converting layer (3) defines an exit window of the light converting device (11). The light converting device (11) further comprises a hydrophobic nanostructure (6) having spaced apart protrusions (66) arranged on the front side (5) of the wavelength converting layer (3) and a protective coating (7) applied on top of the hydrophobic nanostructure (6).

Abstract: A flexible display device is disclosed. In one aspect, the display device includes a flexible display panel including a display substrate, wherein the display substrate includes an active area for pixel circuits, an inactive area adjacent to the active area and having a pad area including a plurality of pad terminals, and a thin film encapsulation layer covering the active area. The display device also includes a display driver electrically connected to the pad terminals and a plurality of driving terminals each having a rounding unit. A conductive unit is configured to electrically connect the pad terminals to the respective driving terminals.

Abstract: A light-emitting device includes a substrate including a base member having an upper surface having a substantially rectangular shape, a lower surface opposite to the upper surface, a first longer lateral surface, a second longer lateral surface opposite to the first longer lateral surface, a first shorter lateral surface, and a second shorter lateral surface opposite to the first shorter lateral surface, first wirings disposed on the upper surface, and second wirings disposed on the lower surface and each electrically connected with a respective one of the first wirings; at least one light-emitting element; and a light-reflective covering member covering lateral surfaces of the light-emitting element and the upper surface of the base member. The base member has at least one first recess open at the upper surface and the first longer lateral surface. Surfaces defining the at least one first recess are covered with the covering member.

Abstract: Disclosed is an organic light emitting diode display apparatus including: a substrate; an organic light emitting diode disposed on the substrate; and an encapsulation layer encapsulating the organic light emitting diode. The encapsulation layer has a structure in which two or more inorganic layers and one or more organic layers are alternately stacked one above another, two adjacent inorganic layers at least partially contact each other, and the organic layers are formed of an encapsulating composition. The encapsulating composition includes a photocurable monomer and a photopolymerization initiator. The photocurable monomer includes a monomer containing no aromatic hydrocarbon group; and a monomer having two or more substituted or unsubstituted phenyl groups represented by Formula 1.

Abstract: A thin-film manufacturing method, a thin-film manufacturing apparatus, a manufacturing method for a photoelectric conversion element, a manufacturing method for a logic circuit, a manufacturing method for a light-emitting element, and a manufacturing method for a light control element with which number-of-layers control and laminating and film-forming of different kinds of materials is described. A thin-film manufacturing method according to the present technology includes bringing an electrically conductive film-forming target into contact with a first terminal and a second terminal, heating a first region that is a region of the film-forming target between the first terminal and the second terminal by applying voltage between the first terminal and the second terminal, supplying a film-forming raw material to the first region; and forming a thin film in the first region by controlling reaction time such that a thin film having a desired number of layers is formed.

Abstract: An optical component for optical semiconductor includes a wavelength converting member including a fluorescent part having an upper surface, a lower surface, and one or more lateral surfaces, and containing a fluorescent material, and a light-reflecting part disposed adjacently surrounding the one or more lateral surfaces of the fluorescent part when viewed from above, and a light-transmissive member disposed below the wavelength converting member. A dielectric multilayer film is disposed on an upper surface of the light-transmissive member at least at a region facing the fluorescent part, the dielectric multilayer film is configured to transmit excitation light incident from below the light-transmissive member and to reflect fluorescent light emitted from the fluorescent part. Further, a space is formed between the fluorescent part and the dielectric multilayer film, and the light-reflecting part and the light-transmissive member are connected by a connecting member made of a metal material.

Abstract: A display device may include a substrate; a plurality of signal lines on the substrate; a plurality of scan lines on the substrate, the scan lines crossing the signal lines; and a plurality of thin film transistors at crossing positions of the scan lines and the signal lines. The scan lines include some first scan lines and some second scan lines. Each of the second scan lines has an end connected to a load element.

Abstract: Embodiments relate to a method for fabricating a light-emitting-diode (LED). A metal layer is deposited on a p-type semiconductor. The p-type semiconductor is on an n-type semiconductor. The metal layer is patterned to define a p-metal. The p-type semiconductor is etched using the p-metal as an etch mask. Similarly, the n-type semiconductor is etched using the p-metal and the p-type semiconductor as an etch mask to define individual LEDs.

Abstract: An optoelectronic module assembly includes an optoelectronic module. The module includes: an active optoelectronic component in or on a mounting substrate, an optical sub-assembly, and a spacer disposed between the mounting substrate and the optical sub-assembly so as to establish a particular distance between the active optoelectronic component and the optical sub-assembly. The optoelectronic module assembly also includes a recessed substrate including first and second surfaces, wherein the second surface is in a plane closer to the optical sub-assembly than is the first surface. The optoelectronic module is mounted on the first surface. The second surface is for mounting other components.

Abstract: A laminated glazed automobile roof including two outer and inner sheets of glass and inserted sheets joining the sheets of glass, and including, arranged between the two sheets of glass, an LC (liquid crystal film) assembly for controlling light transmission, and light-emitting diode (LED) lighting elements.

Abstract: The present disclosure relates to an ultra high density transparent flat panel display. The present disclosure provides a transparent flat panel display including: a driving current line, a data line and a sensing line running in a vertical direction on a substrate; a scan line and a horizontal sensing line running in a horizontal direction on the substrate; an emission area disposed between the driving current line and the data line; and a transparent area disposed between the data line and the sensing line.

Abstract: An optical device includes a first plate having a first transparent region defining an exit face of the device, and a second plate having a second transparent region defining an entrance face of the device. At least one lens is formed over at least one of the first and second transparent regions. First and second planar reflectors are spaced apart and fixed between the first and second plates in mutually-parallel orientations diagonal to the first and second plates, thereby defining an optical path through the device from the entrance face, reflecting from the first and second reflectors, through the exit face and passing through the at least one refractive surface.

Abstract: A light emitting diode and a light emitting diode display, the light emitting diode including a first electrode; a second electrode overlapping the first electrode; an emission layer between the first electrode and the second electrode; and an electron injection layer between the second electrode and the emission layer, wherein the electron injection layer includes a lanthanide element, an alkali meta first element, and a halogen second element, and wherein the first element and the second element are included in the electron injection layer in an amount of 1 vol % to 20 vol %, based on a total volume of a material including the lanthanide element, the first element, and the second element.

Abstract: The invention provides a photo-alignment apparatus and a photo-alignment method. In photo-alignment apparatus, a movable polarizing element is disposed between loading platform and light source; when the LC panel to be aligned uses display mode of horizontal alignment, moving the polarizing element to below light source to convert non-polarized light emitted from light source into linearly polarized light to irradiate on the LC panel to be aligned to perform alignment; when the LC panel to be aligned uses display mode of vertical alignment, moving the polarizing element to a region outside of below light source, so that the non-polarized light emitted from light source irradiating on the LC panel to be aligned to perform alignment. As such, the present invention can be applied to horizontal alignment and vertical alignment respectively, improve the usability of the photo-alignment apparatus, reduce the manufacturing cost, save space and reduce management load.

Abstract: A light-emitting apparatus including a light-emitting device, a light-guiding structure and a light output structure is provided. The light-emitting device includes a light-emitting layer. The light-guiding structure is configured to guide light emitted from the light-emitting layer. The light-guiding structure is disposed beside the light-emitting device and a refractive index of the light-guiding structure is greater than or equal to an average refractive index of the light-emitting device. The light output structure is configured to receive the light guided by the light-guiding structure to output the light out of the light-emitting apparatus.

Abstract: A display device includes a display panel, a window on the display panel, and an adhesive member between the display panel and the window, wherein the window includes a base substrate and a light-shielding pattern layer, the base substrate including a first region overlapping the display panel, and a second region extending and protruding outward from the display panel, the light-shielding pattern layer being on the first region and the second region and including a groove adjacent to an outer surface of the display panel.

Abstract: A method of producing optoelectronic components includes A) providing a carrier and optoelectronic semiconductor chips including contact elements arranged on a contact side of the semiconductor chip; B) applying the semiconductor chips laterally next to one another on to the carrier, wherein the contact sides face the carrier during application; C) applying an electrically-conductive layer at least on to subregions of the sides of the semiconductor chip not covered by the carrier; D) applying a protective layer at least on to subregions of side surfaces of the semiconductor chips running transversely to the contact surface; E) electrophoretically depositing a converter layer on to the electrically-conductive layer, wherein the converter layer is configured to convert at least part of radiation emitted by the semiconductor chip into radiation of a different wavelength range; and F) removing the electrically-conductive layer from regions between the converter layer and the semiconductor chips.

Abstract: A flexible display apparatus is provided in the present disclosure and includes a flexible substrate, an organic electroluminescent device, and a plurality of thin film transistors disposed between the flexible substrate and the organic electroluminescent device. The organic electroluminescent device is controlled by the thin film transistors to emit light. The flexible substrate is doped with a plurality of nano-particles that are configured to refract the light emitted from the organic light-emitting layer to an external environment.

Abstract: This application discloses a method for manufacturing an array substrate. The array substrate manufacturing method includes: providing a first substrate; forming gate layers on the first substrate; forming a gate insulation layer on the first substrate, and covering the gate layers; forming an amorphous silicon layer on the gate insulation layer; forming a metal layer on the amorphous silicon layer; forming a photo-sensitive photoresist layer on the metal layer; etching the amorphous silicon layer by using inert gas or nitrogen plasma, to form a groove; forming source layers and a drain layer; removing the photo-sensitive photoresist layer; and forming a passivation layer on the source layers, where a baking process is performed on the photo-sensitive photoresist layer, so that the photo-sensitive photoresist layer flows to some extent so as to form a protection layer, so as to cover the metal layer in a non-active switch channel region.

Abstract: This disclosure relates to light emitting devices and methods of manufacture thereof, including side and/or multi-surface light emitting devices. Embodiments according to the present disclosure include the use of a functional layer, which can comprise a stand-off distance with one or more portions of the light emitter to improve the functional layer's stability during further device processing. The functional layer can further comprise winged portions allowing for the coating of the lower side portions of the light emitter to further interact with emitted light and a reflective layer coating on the functional layer to further improve light extraction and light emission uniformity. Methods of manufacture including methods utilizing virtual wafer structures are also disclosed.

Abstract: A light-emitting device including a window layer-cum-support substrate, a light-emitting portion provided on the window layer-cum-support substrate and including a second semiconductor layer of a second conductivity type, an active layer, and first semiconductor layer of a first conductivity type in stated order, a first ohmic electrode provided on the first semiconductor layer, and insulator top coat at least partially coating the first semiconductor layer surface and light-emitting portion side surface, wherein the first semiconductor layer surface and surface of the window layer-cum-support substrate are roughened, and the first semiconductor layer includes at least two layers of an active-layer-side layer and roughened-side layer, and roughened-side layer is formed of material having lower Al content than the active-layer-side layer.

Abstract: To prevent degradation of electrical characteristics caused by a resin filled between electrodes in an ultraviolet light-emitting operation, there is provided a nitride semiconductor wafer having ultraviolet light-emitting elements on a substrate 12, each element including a semiconductor laminated portion 21 constituted by an n-type AlGaN layer 16, an active layer 17 composed of an AlGaN layer, and p-type AlGaN layers 19 and 20, an n-electrode 23, a p-electrode 22, a protective insulating film 24, first and second plated electrodes 25 and 26, and a fluororesin film 27. The p-electrode is formed on an upper surface of the p-type AlGaN layer in the first region R1 and the n-electrode is formed on an upper surface of the n-type AlGaN layer in the second region R2. The protective insulating film has openings for exposing at least parts of the n-electrode and the p-electrode.

Abstract: Standardized photon building blocks are packaged in molded interconnect structures to form a variety of LED array products. No electrical conductors pass between the top and bottom surfaces of the substrate upon which LED dies are mounted. Microdots of highly reflective material are jetted onto the top surface. Landing pads on the top surface of the substrate are attached to contact pads disposed on the underside of a lip of the interconnect structure. In a solder reflow process, the photon building blocks self-align within the interconnect structure. Conductors in the interconnect structure are electrically coupled to the LED dies in the photon building blocks through the contact pads and landing pads. Compression molding is used to form lenses over the LED dies and leaves a flash layer of silicone covering the landing pads. The flash layer laterally above the landing pads is removed by blasting particles at the flash layer.

Abstract: Alternating Current (AC)-coupled switch and metal capacitor structures for nanometer or low metal layer count processes are provided. According to one aspect of the present disclosure, a switch and capacitor structure comprises a substrate comprising a device region with a Field Effect Transistor (FET) formed therein, the FET having a source terminal comprising a structure in a first metal layer and a drain terminal comprising a structure in the first metal layer, and a capacitor comprising a first plate and a second plate, the first plate comprising a structure in a second metal layer, the second metal layer being above the first metal layer, the structure of the first plate being electrically connected to the structure of the drain terminal, and the second plate comprising a structure in the second metal layer, the structure of the first plate spaced from the structure of the second plate.

Abstract: Provided are a wavelength conversion member and a wavelength conversion element which are capable of reducing the decrease in luminescence intensity with time and the melting of a component material when irradiated with light of a high-power LED or LD, and a light emitting apparatus using the wavelength conversion member or the wavelength conversion element. A wavelength conversion member contains, in % by mass, 70 to 99.9% inorganic phosphor particles and 0.1 to 30% easily sinterable ceramic particles, wherein the easily sinterable ceramic particles are interposed between the inorganic phosphor particles and the inorganic phosphor particles are bound together by the easily sinterable ceramic particles.

Abstract: In various embodiments, a stretchable electroluminescent device may be provided. The electroluminescent device may include a first contact structure. The first contact structure may include an ionic conductor layer. The electroluminescent device may also include a second contact structure. The electroluminescent device may additionally include an emission layer between the first contact structure and the second contact structure. The emission layer may be configured to emit light when an alternating voltage is applied between the first contact structure and the second contact structure.

Abstract: A side-view light emitting laser element includes a support substrate, a first electrode layer, a second electrode layer, and a light emitting multilayer unit sandwiched between the first electrode layer and the second electrode layer. The first electrode layer is disposed on the support substrate. The second electrode layer is disposed on the first electrode layer. The light emitting multilayer unit includes a first semiconductor layer, a second semiconductor layer and an activating layer sandwiched between the first semiconductor layer and the second semiconductor layer. A first refractive index of the first electrode layer and a second refractive index of the second electrode layer are between 1 and 0, respectively.

Abstract: The present invention relates to a film for flip chip type semiconductor back surface, which is to be disposed on a back surface of a semiconductor element flip chip-connected onto an adherend, the film for flip chip type semiconductor back surface including an adhesive layer and a protective layer laminated on the adhesive layer, in which the protective layer is constituted of a heat-resistant resin having a glass transition temperature of 200° C. or more or a metal.

Abstract: Methods of fabricating solid-state imaging devices having a flat microlens array are provided. The method includes providing a semiconductor substrate having a plurality of photoelectric conversion elements. A color filter layer is formed above the semiconductor substrate. A lens material layer is formed on the color filter layer. A hard mask having a lens-shaped pattern is formed on the lens material layer. The method further includes etching both the hard mask and the lens material layer to form a microlens with a flat top surface that is formed from the lens material layer, and to leave a portion of the hard mask on the flat top surface of the microlens. The method also includes removing the portion of the hard mask that remains on the microlens.

Abstract: A thin film transistor “TFT”) substrate includes a substrate, an active layer over the substrate, and first and second TFTs over the substrate. The active layer includes: a first drain region, a first channel region and a first source region, which function as a drain, a channel and a source of the first TFT: a first lightly doped region between the first drain region and the first channel region: a second lightly doped region between the first channel region and the first source region: and a second drain region, a second channel region and a second source region, which function as a drain, a channel and a source of the second TFT. An impurity concentration at the second drain or source region is lower than an impurity concentration at the first drain or source region and higher than an impurity concentration at the first or second channel region.

Abstract: Disclosed is an AMOLED display panel structure, comprising a plurality of transversely scan lines which extend horizontally, a plurality of data lines which extend vertically and are insulated from the scan lines, switching lines of a same number of the scan lines which extend vertically, a plurality of row driving circuits coupled to the switching lines and a plurality of column driving circuits coupled to the data lines; one switching line is coupled to one scan line, one row driving circuit is coupled to a plurality of switching lines, one column driving circuits is coupled to a plurality of data lines; the row driving circuit and the column driving circuit are located in the lower border frame region; the left, right and upper frame regions are only used for package to achieve the ultra narrow border frames for all three sides of the AMOLED display panel.

Abstract: A method for manufacturing a light-emitting diode (LED) is provided. The method includes following steps. A LED wafer including a substrate and a plurality of light-emitting units formed thereon is provided. At least a portion of the substrate is removed. The LED wafer is fixed on an extensible membrane, wherein the light-emitting unit faces the extensible membrane. The LED wafer is broken to form a plurality of LED dices separated from each other, wherein each LED dice includes at least one light-emitting unit. The extensible membrane is expanded to make a distance between any two of the LED dices become larger.

Abstract: The present disclosure relates to a display device and a color filter. The color filter includes a dielectric layer and wire grid structures on the dielectric layer, each of the wire grid structures includes a first wire grid unit, a second wire grid unit, a third wire grid unit, and a fourth wire grid unit. The first wire grid unit, the second wire grid unit, the third wire grid unit, and the fourth wire grid unit respectively includes a plurality of wire grids spaced apart from each other. Grid-spaces of the first wire grid unit, the second wire grid unit, the third wire grid unit, and the fourth wire grid unit are different. With such configuration, the white CIE composited by the R sub-pixel, the G sub-pixel, and the B sub-pixel may be matched with the white CIE of the W sub-pixel.

Abstract: A includes a switch TFT and a drive TFT. The switch TFT is formed of a first source and a first drain, a first gate, and a first etching stopper layer, and a first oxide semiconductor layer and first gate isolation layer sandwiched therebetween. The drive TFT is formed of a second source and a second drain, a second gate, and a second oxide semiconductor layer, and a first etching stopper layer and a second gate isolation layer sandwiched therebetween. The electrical properties of the switch TFT and the drive TFT are different. The switch TFT has a smaller subthreshold swing to achieve fast charge and discharge, and the drive TFT has a relatively larger subthreshold swing for controlling a current and a grey scale more precisely.

Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.

Abstract: LED chip packaging assembly that facilitates an integrated method for mounting LED chips as a group to be pre-wired to be electrically connected to each other through a pattern of extendable metal wiring lines is provided. LED chips which are electrically connected to each other through extendable metal wiring lines, replace pick and place mounting and the wire bonding processes of the LED chips, respectively. Wafer level MEMS technology is utilized to form parallel wiring lines suspended and connected to various contact pads. Bonding wires connecting the LED chips are made into horizontally arranged extendable metal wiring lines which can be in a spring shape, and allowing for expanding and contracting of the distance between the connected LED chips. A tape is further provided to be bonded to the LED chips, and extended in size to enlarge distance between the LED chips to exceed the one or more prearranged distances.

Abstract: A light emitting device includes a substrate, a light emitting element provided on the substrate, a first resin layer provided on the substrate to directly cover the light emitting element having a first side surface and a second side surface, and the first side surface and the second side surface differ from each other in inclination angle with respect to the substrate, and a second resin layer provided so as to surround side surfaces of the first resin layer.

Abstract: Standardized photon building blocks are packaged in molded interconnect structures to form a variety of LED array products. No electrical conductors pass between the top and bottom surfaces of the substrate upon which LED dies are mounted. Microdots of highly reflective material are jetted onto the top surface. Landing pads on the top surface of the substrate are attached to contact pads disposed on the underside of a lip of the interconnect structure. In a solder reflow process, the photon building blocks self-align within the interconnect structure. Conductors in the interconnect structure are electrically coupled to the LED dies in the photon building blocks through the contact pads and landing pads. Compression molding is used to form lenses over the LED dies and leaves a flash layer of silicone covering the landing pads. The flash layer laterally above the landing pads is removed by blasting particles at the flash layer.

Abstract: Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include an air cavity disposed on a substrate, a bulk acoustic wave resonant unit including a piezoelectric layer, and a reflective layer to reflect a wave of a resonant frequency that is generated from the piezoelectric layer.

Abstract: Standardized photon building blocks are packaged in molded interconnect structures to form a variety of LED array products. No electrical conductors pass between the top and bottom surfaces of the substrate upon which LED dies are mounted. Microdots of highly reflective material are jetted onto the top surface. Landing pads on the top surface of the substrate are attached to contact pads disposed on the underside of a lip of the interconnect structure. In a solder reflow process, the photon building blocks self-align within the interconnect structure. Conductors in the interconnect structure are electrically coupled to the LED dies in the photon building blocks through the contact pads and landing pads. Compression molding is used to form lenses over the LED dies and leaves a flash layer of silicone covering the landing pads. The flash layer laterally above the landing pads is removed by blasting particles at the flash layer.

Abstract: A method for manufacturing an array substrate is provided. The array substrate, by providing a black matrix and a color resist layer on the array substrate and providing the color resist layer on the TFT layer, prevents bad influences on the color resist layer caused by a high temperature TFT process so as to provide a liquid crystal panel with improved displaying quality. The method includes, firstly, forming a black matrix on a substrate, and secondly, implementing a TFT manufacture process on the black matrix, and then forming a color resist layer after the TFT manufacture process. Accordingly, forming both the black matrix and the color resist layer on the array substrate can be achieved, where the color resist layer is formed after the TFT manufacture process to prevent bad phenomenon caused by the high temperature of the TFT process.

Abstract: A light source includes LED dies that are flip-chip mounted on a flexible plastic substrate. The LED dies are attached to the substrate using an asymmetric conductor material with deformable conducting particles sandwiched between surface mount contacts on the LED dies and traces on the substrate. A diffusively reflective material containing light scattering particles is used instead of expensive reflective cups to reflect light upwards that is emitted sideways from the LED dies. The diffusively reflective material is dispensed over the top surface of the substrate and contacts the side surfaces of the dies. The light scattering particles are spheres of titanium dioxide suspended in silicone. The light source is manufactured in a reel-to-reel process in which the asymmetric conductor material and the diffusively reflective material are cured simultaneously. A silicone layer of molded lenses including phosphor particles is also added over the mounted LED dies in the reel-to-reel process.

Abstract: A flip-chip light emitting diode chip includes a first semiconductor structure, which includes a P-type semiconductor layer, a N-type semiconductor layer, openings, a reflective layer, a barrier layer, a passivation layer, and an electrical contact layer. The openings penetrate the P-type semiconductor layer and a part of the N-type semiconductor layer so as to partially expose the N-type semiconductor layer. The reflective layer is disposed on the P-type semiconductor layer. The barrier layer is disposed on the reflective layer, and the area of the barrier layer is smaller than that of the reflective layer therefore the reflective layer is exposed from the barrier layer. The passivation layer is disposed on the barrier layer and partially fills in the openings. The electrical contact layer disposed on the passivation layer partially penetrates through the passivation layer to contact the exposed part of the N-type semiconductor layer.

Abstract: A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide.