Abstract: This invention concerns a colorimetric device for detecting, in an aqueous solution of interest, a hydrolytic enzymatic activity with regard to at least one polymer of interest. This device (1) includes (i) a substrate (2) and (ii) a transparent detection layer (3), including the said polymer of interest. This detection layer (3) is adapted so that, on the one hand, after application of the said aqueous solution of interest, when it is deprived of said hydrolytic enzymatic activity, it preserves the said first thickness e, and on the other, after the application of the said aqueous solution of interest, when it includes the said hydrolytic enzymatic activity, it has a second thickness e?, thinner than the said first thickness e, and the said first thickness e and/or the said second thickness e? of the said detection layer (3) are adapted to generate a color by an optical interference phenomenon caused by the recombining of the light beams reflected at the interfaces (4, 5) of the said detection layer (5).

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer.

Abstract: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of first three-dimensional nano-structures are located on the second surface of the first semiconductor layer. A number of second three-dimensional nano-structures are located on a surface of the active layer contacting the second semiconductor layer, and a cross section of each of the three-dimensional nano-structures is M-shaped.

Abstract: One of the objects of the present invention is to provide a method for readily manufacturing a seamless mold in the form of a roll which has a porous alumina layer over its surface. The mold manufacturing method of the present invention is a method for manufacturing a mold which has a porous alumina layer over its surface, including the steps of: providing a hollow cylindrical support; forming an insulating layer on an outer perimeter surface of the hollow cylindrical support; depositing aluminum on the insulating layer to form an aluminum film; and anodizing a surface of the aluminum film to form a porous alumina layer which has a plurality of minute recessed portions.

Abstract: A method for applying a pressure-sensitive gel material during assembly of an array of pre-singulated packaged semiconductor devices. In the method, pressure-sensitive gel material is dispensed onto a first semiconductor device of the array, where the first semiconductor device is disposed within a first cavity. A first curing process is performed to partially cure the pressure-sensitive gel material in the first cavity. Pressure-sensitive gel material is then dispensed onto another semiconductor device of the array, where the other semiconductor device is disposed within another cavity. The first curing process is initiated before the dispensing of the pressure-sensitive gel material inside of the other cavity is completed and initially cures pressure-sensitive gel material for fewer than all of the pre-singulated packaged semiconductor devices of the array.

Abstract: Provided are an organic light-emitting display apparatus having a very low defect rate in a manufacturing process, and a method of manufacturing the organic light-emitting display apparatus. The organic light-emitting display apparatus includes: a substrate; a planarization layer covering the substrate and having a top surface including a recessed portion; a pixel electrode in the recessed portion of the planarization layer; a step forming unit on the top surface of the planarization layer outside of the recessed portion; and a pixel-defining layer exposing at least a central portion of the pixel electrode, and covering the step forming unit so that a top surface of the pixel-defining layer includes a protruding portion corresponding to the step forming unit.

Abstract: Described is a method for producing a semiconductor device (100), in which at least one column-shaped or wall-shaped semiconductor device (10, 20) extending in a main direction (z) is formed on a substrate (30), wherein at least two sections (11, 13, 21, 23) of a first crystal type and one section (12, 22) of a second crystal type therebetween are formed in an active region (40), each section with a respective predetermined height (h1, h2), wherein the first and second crystal types have different lattice constants and each of the sections of the first crystal type has a lattice strain which depends on the lattice constants in the section of the second crystal type.

Abstract: The invention describes a method of manufacturing a VCSEL module (100) comprising at least one VCSEL chip (33) with an upper side (U) and a lower side (L) and with a plurality of VCSEL units (55) on a common carrier structure (35), the VCSEL units (55) comprising a first doped layer (50) of a first type facing towards the lower side (L) and a second doped layer (23) of a second type facing towards the upper side (U). The method comprises the steps of dividing the VCSEL chip (33) into a plurality of subarrays (39a, 39b, 39c, 39d, 39e, 39f, 39g, 39h, 39i) with at least one VCSEL unit (55) each, electrically connecting at least some of the subarrays (39a, 39b, 39c, 39d, 39e, 39f, 39g, 39h, 39i) in series. The invention also describes a VCSEL module (100) manufactured in such process.

Abstract: An LED light emitting device is provided that has high color rendering properties and is excellent color uniformity and, at the same time, can realize even luminescence unattainable by conventional techniques. A phosphor having a composition represented by formula: (Sr2-X-Y-Z-?BaXMgYMnZEu?)SiO4 wherein x, y, z, and ? are respectively coefficients satisfying 0.1<x<1, 0<y<0.5, 0<z<0.1, y>z, and 0.01<?<0.2 is provided. The phosphor is used in combination with ultraviolet and blue light emitting diodes having a luminescence peak wavelength of 360 to 470 nm to form an LED light emitting device.

Abstract: A light emitting device includes a conductive support member, a first conductive layer disposed on the conductive support member, a second conductive layer disposed on the first conductive layer, a light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and an insulation layer disposed between the first conductive layer and the second conductive layer. The first conductive layer includes a first expansion part penetrating through the second conductive layer, the second semiconductor layer and the active layer, and includes a second expansion part extending from the first expansion part and being disposed in the first semiconductor layer. The insulation layer is disposed on the lateral surface of the first expansion part, and the lateral surface of the second expansion part contacts with the first semiconductor layer.

Abstract: A liquid crystal display (LCD) device according to an embodiment includes a liquid crystal panel; a first polarization plate on the liquid crystal panel; a backlight unit under the liquid crystal panel; and a quantum rod sheet disposed between the liquid crystal panel and the backlight unit.

Abstract: Disclosed is a semiconductor device comprising a substrate (10); at least one semiconducting layer (12) comprising a nitride of a group 13 element on said substrate; and an ohmic contact (20) on the at least one semiconducting layer, said ohmic contact comprising a silicon-comprising portion (22) on the at least one semiconducting layer and a metal portion (24) adjacent to and extending over said silicon-comprising portion, the metal portion comprising titanium and a further metal. A method of manufacturing such a semiconductor device is also disclosed.

Abstract: A method of manufacturing an organic light emitting display device includes defining pixels on a substrate, each of the pixels including a first area in which light is emitted in a first direction and a second area in which light is emitted in a second direction opposite the first direction; forming first electrodes respectively disposed in the first area of each of the pixels; forming a sacrificial layer in the first area and the second area of each pixel to cover the first electrodes; forming openings in the sacrificial layer to open a patterning area in the respective second area of each of the pixels; forming a conductive layer on the patterning areas and the sacrificial layer; removing the sacrificial layer; forming an intermediate layer including an organic emitting layer; and forming a third electrode on the intermediate layer.

Abstract: The present sensor chip comprises a substrate. A plurality of electrode elements is arranged at a first level on the substrate with at least one gap between neighboring electrode elements. A metal structure is arranged at a second level on the substrate, wherein the second level is different from the first level. The metal structure at least extends over an area of the second level that is defined by a projection of the at least one gap towards the second level.

Abstract: The present invention provides a package for a light-emitting device, including the light-emitting device configured to provide light having a specific wavelength region, electrode pads formed on the light-emitting device, and a phosphor layer formed over the light-emitting device other than regions where the electrode pads are formed and configured to convert the light of the light-emitting device into white light by changing the wavelength of the light provided by the light-emitting device, wherein the phosphor layer is formed in a conformable thickness and is formed in a region wider than an upper region of the light-emitting device other than the regions where the electrode pads are formed.

Abstract: Standardized photon building blocks are packaged in molded interconnect structures to form a variety of LED array products. No electrical conductors pass between the top and bottom surfaces of the substrate upon which LED dies are mounted. Microdots of highly reflective material are jetted onto the top surface. Landing pads on the top surface of the substrate are attached to contact pads disposed on the underside of a lip of the interconnect structure. In a solder reflow process, the photon building blocks self-align within the interconnect structure. Conductors in the interconnect structure are electrically coupled to the LED dies in the photon building blocks through the contact pads and landing pads. Compression molding is used to form lenses over the LED dies and leaves a flash layer of silicone covering the landing pads. The flash layer laterally above the landing pads is removed by blasting particles at the flash layer.

Abstract: A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode is electrically connected with and covers the first surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located both on the first surface and second surface, and a cross section of each of the three-dimensional nano-structure is M-shaped.

Abstract: Baking methods and tools for improved wafer coating are described. In one embodiment, a method of dicing a semiconductor wafer including integrated circuits involves coating a surface of the semiconductor wafer to form a mask covering the integrated circuits. The method involves baking the mask with radiation from one or more light sources. The method involves patterning the mask with a laser scribing process to provide a patterned mask with gaps, exposing regions of the substrate between the ICs. The method may also involves singulating the ICs, such as with a plasma etching operation.

Abstract: An optoelectronic semiconductor laser includes a growth substrate; a semiconductor layer sequence that generates laser radiation; a front facet at the growth substrate and at the semiconductor layer sequence, wherein the front facet constitutes a main light exit side for the laser radiation generated in the semiconductor laser and has a light exit region at the semiconductor layer sequence; a light blocking layer for the laser radiation, which partly covers at least the growth substrate at the front facet such that the light exit region is not covered by the light blocking layer; and a bonding pad at a side of the semiconductor layer sequence facing away from the growth substrate, wherein a distance between the bonding pad and the light blocking layer at least at the light exit region is 0.1 ?m to 100 ?m.

Abstract: A light source and method for making the same are disclosed. The light source includes a conducting substrate, and a light emitting structure that is divided into segments. The light emitting structure includes a first layer of semiconductor material of a first conductivity type deposited on the substrate, an active layer overlying the first layer, and a second layer of semiconductor material of an opposite conductivity type from the first conductivity type overlying the active layer. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first layer in the first segment to the second layer in the second segment. A power contact is electrically connected to the second layer in the first segment, and a second power contact electrically connected to the first layer in the second segment.

Abstract: An objective is to increase the reliability of a light emitting device structured by combining TFTs and organic light emitting elements. A TFT (1201) and an organic light emitting element (1202) are formed on the same substrate (1203) as structuring elements of a light emitting device (1200). A first insulating film (1205) which functions as a blocking layer is formed on the substrate (1203) side of the TFT (1201), and a second insulating film (1206) is formed on the opposite upper layer side as a protective film. In addition, a third insulating film (1207) which functions as a barrier film is formed on the lower layer side of the organic light emitting element (1202). The third insulating film (1207) is formed by an inorganic insulating film such as a silicon nitride film, a silicon oxynitride film, an aluminum nitride film, an aluminum oxide film, or an aluminum oxynitride film.

Abstract: A display apparatus includes a sealing portion. A method for fabricating the sealing portion includes: irradiating a pulse laser beam onto a deposition target to form the sealing portion at an edge where a substrate and an encapsulation face each, wherein a display unit is formed on the substrate, and the encapsulation is configured to seal the substrate; bonding the substrate and the encapsulation to each other; hardening the sealing portion; and monitoring the sealing portion. Thus, structural strength of the sealing portion is improved.

Abstract: A method of manufacturing a solid-state image sensor includes preparing a structure including a photoelectric converter formed in an image sensing region and a pad electrode formed in a pad region, forming a first organic film including a first organic portion arranged in the image sensing region of the structure in the image sensing region and the pad region, forming a color filter layer on the first organic portion, forming a second organic film in the image sensing region and the pad region, forming an inorganic film in the image sensing region and the pad region, and etching the inorganic film, the second organic film, and the first organic film so as to form an opening which communicates with the pad electrode.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer.

Abstract: The invention provides a method for fabricating a light-emitting diode device. The method includes providing a carrier having a first surface and a second surface. The first surface has insulating micro patterns. A buffer layer, a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer are grown on the first surface to form a light-emitting lamination layer. A substrate is provided for the second-type semiconductor layer to bond on. The carrier is lifted off from the light-emitting lamination layer by a laser lift-off process, and surfaces of the insulating micro patterns and a surface of the buffer layer between the insulating micro patterns are exposed. The insulating micro patterns and the buffer layer are removed. Recess structures are formed on the first-type semiconductor layer. A surface-roughing process is then performed on the recess structures.

Abstract: A method of manufacturing a semiconductor light emitting device, includes forming a light emitting structure on a growth substrate. The light emitting structure includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. A support substrate having one or more protrusions formed on one surface thereof is prepared. The one or more protrusions formed on the one surface of the support substrate are attached to one surface of the light emitting structure. The growth substrate is separated from the light emitting structure.

Abstract: A method of forming a light-emitting diode includes: providing a substrate having one or more first openings passing through the substrate; forming a sacrificial layer on the substrate; forming an epitaxial layer on the sacrificial layer; connecting a supporting substrate with the epitaxial layer; and separating the substrate from the epitaxial layer by selectively etching the sacrificial layer.

Abstract: An ultraviolet semiconductor light emitting device includes: a light-emitting epitaxial layer including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer; a tunnel junction at a non-light-emitting surface of the light-emitting epitaxial layer and having a patterned structure with openings to expose the light-emitting epitaxial layer; an optical phase matching layer over a surface layer of the light-emitting epitaxial layer and transmissive of UV light; and a reflecting layer covering the entire tunneling junction and the optical phase matching layer. A patterned structure is provided over the tunnel junction for full-angle light reflection. Part of the tunneling junction forms ohmic contact with the low work function reflecting metal. The patterned distribution design can effectively reduce the ohmic contact resistance.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a fluorescent material layer and a scattering layer. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface and includes a light emitting layer. The p-side electrode and the n-side electrode are provided on the semiconductor layer on a side of the second surface. The fluorescent material layer is provided on a side of the first surface and includes a plurality of fluorescent materials and a first bonding material. The first bonding material integrates the fluorescent materials. The scattering layer is provided on the fluorescent material layer and includes scattering materials and a second bonding material. The scattering materials are configured to scatter radiated light of the light emitting layer. The second bonding material integrates the scattering materials.

Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.

Abstract: Light-emitting devices are provided that include a mixed-index layer having a buried grid disposed below a bottom electrode of the device. The grid provides improved outcoupling into glass and air modes relative to techniques that omit such a grid and/or that use a conventional low-index grid embedded in the emissive layers of the device.

Abstract: Exemplary embodiments of the present invention disclose a light-emitting diode (LED) including a semiconductor stack structure including a first semiconductor layer, an active layer, and a second semiconductor layer, the semiconductor stack disposed on a substrate, a conductive substrate disposed on the semiconductor stack structure, and an electrode disposed on the conductive substrate and in ohmic contact with the conductive substrate, wherein the electrode comprises grooves penetrating the electrode and a portion of the conductive substrate.

Abstract: A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.

Abstract: A semiconductor light-emitting device according to the embodiment includes a substrate, a compound semiconductor layer, a metal electrode layer provided with particular openings, a light-extraction layer, and a counter electrode. The light-extraction layer has a thickness of 20 to 120 nm and covers at least partly the metal part of the metal electrode layer; or otherwise the light-extraction layer has a rugged structure and covers at least partly the metal part of the metal electrode layer. The rugged structure has projections so arranged that their summits are positioned at intervals of 100 to 600 nm, and the heights of the summits from the surface of the metal electrode layer are 200 to 700 nm.

Abstract: A method for manufacturing an LED (light emitting diode) package comprises following steps: providing an electrically insulated base, the base having a first surface and a second surface opposite thereto; an annular voltage stabilizing module is formed on the first surface; a first electrode is formed on the first surface, wherein the first electrode is attached to and encircled by the voltage stabilizing module; a second electrode is formed on the first surface, wherein the second electrode is attached to and encircles the voltage stabilizing module; an LED chip is mounted on the first electrode, wherein the LED chip is electrically connected to the first and second electrodes, and the LED chip and the voltage stabilizing module are connected in reverse parallel. Finally, an encapsulative layer is brought to encapsulate the LED chip.

Abstract: A manufacturing method of an organic light emitting display device is disclosed which includes: forming a thin film transistor on each sub-pixel region which is defined in a substrate; forming a passivation layer on the substrate provided with the thin film transistor; forming a first electrode of an organic light emitting diode in each sub-pixel region of the passivation layer; forming a bank pattern in boundaries of the sub-pixel region of the passivation layer; forming a photoresist pattern, which exposes a first sub-pixel region, on the bank pattern; forming an organic light emission layer on the first electrode within the first sub-pixel region and an organic material layer on the photoresist pattern by depositing an organic material on the entire surface of the substrate provided with the photoresist pattern; and removing the photoresist pattern and the organic material pattern using a detachment film.

Abstract: According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting element. The method can include bonding a stacked main body of a structural body to a substrate main body. The structural body includes a growth substrate and the stacked main body provided on the growth substrate. The stacked main body includes a first nitride semiconductor film, a light emitting film provided on the first nitride semiconductor film, and a second nitride semiconductor film provided on the light emitting film. The method can include removing the growth substrate. The method can include forming a plurality of stacked bodies. The method can include forming an uneven portion in a surface of a first nitride semiconductor layer. The method can include forming a plurality of the semiconductor light emitting elements.

Abstract: A novel method and apparatus for performing the method is disclosed the apparatus comprises a laser (17), at least one ink jet print head (14), means for holding a transparent substrate having a transparent conductive layer, means (22) for adjusting the relative positions of the laser and at least one ink jet print head to the transparent conducting layer (2) and a controller to control the laser and ink jet print head whereby in a first step to inkjet print one or more coarse metal borders (15) onto the deposited TCM layer and in a second step by means of a single laser ablation process, ablating tracks in both the metal border and underlying TCM layer to form a plurality of discrete electrical busbars (12) and optionally also to form electrodes in the remainder of the TCM layer.

Abstract: Pixels of a display device include a first substrate, an organic insulation layer disposed on the first substrate and having an upper surface formed in an uneven structure, an inorganic insulation layer disposed on the organic insulation layer and formed in the uneven structure, a first electrode disposed on the inorganic insulation layer and formed in the uneven structure, and a device to provide a data voltage to the first electrode, in which the first electrode includes a reflective electrode to reflect incident light.

Abstract: A manufacturing method for an LED with roughened lateral surfaces comprises following steps: providing an LED wafer with an electrically conductive layer disposed thereon; providing a photoresist layer on the electrically conductive layer; roughening a lateral surface of the electrically conductive layer by wet etching; forming a depression in the LED wafer by dry etching and roughening a sidewall of the LED wafer defining the depression; and disposing two pads respectively in the depression and the conducting layer. The disclosure also provides an LED with roughened lateral surfaces. A roughness of the roughened lateral surfaces is measurable in micrometers.

Abstract: A method of forming a photovoltaic device is provided that includes a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion, wherein an upper exposed surface of one of the semiconductor portions represents a front side surface of the semiconductor substrate. Patterned antireflective coating layers are formed on the front side surface of the semiconductor surface to provide a grid pattern including a busbar region and finger region. A mask having a shape that mimics each patterned antireflective coating layer is provided atop each patterned antireflective coating layer. A metal layer is electrodeposited on the busbar region and the finger regions. After removing the mask, an anneal is performed that reacts metal atoms from the metal layer react with semiconductor atoms from the busbar region and the finger regions forming a metal semiconductor alloy.

Abstract: The inventive concept provides light emitting devices and methods of manufacturing a light emitting device. The light emitting device may include a transparent substrate including a first region and a second region, a first transparent electrode disposed on a first surface of the transparent substrate, a second transparent electrode facing and spaced apart from the first transparent electrode, an organic light emitting layer disposed between the first and second transparent electrodes, an assistant electrode disposed between the first and second transparent electrodes and selectively masking the second region, and a light path changing structure disposed on a second surface of the transparent substrate and selectively masking the second region.

Abstract: A screen printing method of LED module with phosphor includes: board preparation providing an LED module board with a substrate and a plurality of LED sources fixed on the substrate. The LED sources are flip chip structural and the metal electrodes thereof are fixed to the bonding pads of the substrate. A screen board is provided with meshes corresponding to the shiny sides of the LED sources of the substrate one by one. A projection of each mesh to the shiny side of the corresponding LED source has similar shape with the shiny side of the LED source. The top of the screen board is printed with allocated colloidal phosphor until each mesh is coated fully. The printed substrates are baked to solidify the phosphor. The periphery of the shiny side is fully coated.

Abstract: An LED module includes a submount having a face in a thickness direction thereof, an LED chip bonded to the face of the submount with a first bond, and a patterned wiring circuit electrically connected to the LED chip. The first bond transmits light emitted from the LED chip. The submount is a light-transmissive member having light diffusing properties, and a planar size larger than a planar size of the LED chip. The patterned wiring circuit is provided on the face of the submount so as not to overlap the LED chip. The submount is constituted by a plurality of light-transmissive layers which are stacked in the thickness direction and have different optical properties so that a light-transmissive layer of the plurality of light-transmissive layers which is farther from the LED chip is higher in reflectance in a wavelength range of the light emitted from the LED chip.

Abstract: A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.

Abstract: The present invention provides methods for making pnictide compositions, particularly photoactive and/or semiconductive pnictides. In many embodiments, these compositions are in the form of thin films grown on a wide range of suitable substrates to be incorporated into a wide range of microelectronic devices, including photovoltaic devices, photodetectors, light emitting diodes, betavoltaic devices, thermoelectric devices, transistors, other optoelectronic devices, and the like. As an overview, the present invention prepares these compositions from suitable source compounds in which a vapor flux is derived from a source compound in a first processing zone, the vapor flux is treated in a second processing zone distinct from the first processing zone, and then the treated vapor flux, optionally in combination with one or more other ingredients, is used to grow pnictide films on a suitable substrate.

Abstract: Light-emitting elements such as LEDs are associated with light-converting material such as phosphor and/or other material. A donor substrate comprising the light-converting and/or other material is suitably placed relative to a target substrate associated with the light-emitting elements. A laser or other energy source is then used to transfer the light-converting and/or other material in a pattern via writing or masking from the donor substrate to the target substrate in accordance with the pattern. Addressability and targetability of the transfer process facilitates precise patterning of the target substrate.

Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

Abstract: Disclosed is a light emitting module capable of representing improved heat radiation and improved light collection. there is provided a light emitting module. The light emitting module includes a metallic circuit board formed therein with a cavity, and a light emitting device package including a nitride insulating substrate attached in the cavity of the metallic circuit board, at least one pad part on the nitride insulating substrate, and at least one light emitting device attached on the pad part.

Abstract: An electroluminescent display or lighting product incorporates a panel comprising a collection of distinct light-emitting elements formed on a substrate. A plurality of distinct local seals are formed over respective individual light-emitting elements or groups of light-emitting elements. Each local seal is formed by depositing a low melting temperature glass powder suspension or paste using inkjet technology, and fusing the glass powder using a scanning laser beam having a tailored beam profile. The local seal may be used in conjunction with a continuous thin film encapsulation structure. Optical functions can be provided by each local seal, including refraction, filtering, color shifting, and scattering.