Abstract: A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M1, an element M2, optionally an element M3, and an element Z, and have an average particle size of 50 nm or less. The element M1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.

Abstract: Methods and systems to manufacture a semi-conducting backplane are described. According to one set of implementations, semi-conducting particles are positioned in a supporting material of the semi-conducting backplane utilizing perforations in the supporting material or perforations in a removable support member upon which the semi-conducting backplane is constructed. For example, semi-conducting particles are deposited in perforations on a supporting member such that a portion of the semi-conducting particles protrudes from the supporting member. Suction is applied to the semi-conducting particles to retain the semi-conducting particles in the perforations and a layer of encapsulant material is applied onto the supporting member to cover the protruding portion. The supporting member is then removed from the semi-conducting particles and the layer of encapsulant material, which together form an assembly of the semi-conducting particles and the layer of encapsulant material.

Abstract: Small silicon spheres, less than 200 um in diameter, are desirable for use in forming solar panels. To make such small spheres, a large-area glass substrate has etched in its surface millions of identical indentations, such as having diameters less than 200 um. A silicon ink, formed of a fluid containing nanoparticles of milled silicon, is then deposited over the substrate to completely fill the indentations, and the excess ink is removed. The ink is heated to evaporate the fluid and melt the silicon nanoparticles. A photonic system is used to rapidly melt the silicon. The melted silicon forms a sphere in each indentation by surface tension. Since the density of the silicon in the ink and the volume of each indentation are well defined, the volume of each sphere is well defined. The substrates are reusable. Hundreds of millions of spheres may be produced per minute using the process.

Abstract: Compositions for solution-based deposition of CIGS films are described. The compositions include ternary, quaternary or quinary chalcogenide nanoparticles (i.e., CIGS nanoparticles) and one or more inorganic salts dissolved or dispersed in a solvent to form an ink. The ink can be deposited on a substrate by conventional coating techniques and then annealed to form a crystalline layer. Further processing can be employed to fabricate a PV device. The inorganic salts are included to (i) tune the stoichiometry of the CIGS precursor ink to a desirable ratio, thus tuning the semiconductor band gap, to (ii) dope the CIGS layer with additives, such as Sb and/or Na, to promote grain growth, and/or to (iii) modify and improve the coating properties of the CIGS precursor ink.

Abstract: A method of manufacturing a nano-rod and a method of manufacturing a display substrate in which a seed including a metal oxide is formed. A nano-rod is formed by reacting the seed with a metal precursor in an organic solvent. Therefore, the nano-rod may be easily formed, and a manufacturing reliability of the nano-rod and a display substrate using the nano-rod may be improved.

Abstract: The present invention provides a method for producing a semiconductor laminate including a substrate having formed thereon a silicon layer with small surface unevenness and high continuity. The method of the present invention for producing a semiconductor laminate having a substrate 10 and a sintered silicon particle layer 5 on the substrate includes (a) coating a silicon particle dispersion containing a dispersion medium and silicon particles dispersed in the dispersion medium, on a substrate 10 to form a silicon particle dispersion layer 1, (b) drying the silicon particle dispersion layer 1 to form a green silicon particle layer 2, (c) stacking a light-transmitting layer 3 on the green silicon particle layer, and (d) irradiating the green silicon particle layer 2 with light through the light-transmitting layer 3 to sinter the silicon particles constituting the green silicon particle layer 2, and thereby form a sintered silicon particle layer 5.

Abstract: An embodiment relates to a method of manufacturing a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.

Abstract: Disclosed herein is a solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions.

Abstract: The invention relates to a method for preparing a colloidal nanoparticle solution, including: (a) dissolving a titanium-oxide precursor, referred to as a precursor, in one or more solvents, referred to as precursor solvents; and (b) chemically converting, preferably by means of hydrolysis, said titanium-oxide precursor and said precursor solvent into a colloidal-solution solvent so as to form titanium-oxide nanoparticles that are dispersed in the colloidal-solution solvent, said colloidal solution having a dynamic viscosity of between 4 and 54 cP at 20° C. and 101,325 Pa. The invention also relates to a colloidal titanium-oxide nanoparticle solution containing a dispersion of titanium-oxide nanoparticles in a solvent or system of solvents, the viscosity of which is between 4 and 54 cP, said solution being particularly obtainable according to the method of the invention, as well as to the uses thereof, in particular for preparing photovoltaic cells.

Abstract: The present disclosure explores and fabricates coupled plasmonic nanoparticles of gold (Au), silver (Ag), or aluminum (Al) onto nanorods or nanowires of zinc telluride (ZnTe), silicon (Si), germanium (Ge), or other semiconductor materials. Full-wave simulation is performed to obtain an optimum design for maximum light absorption. The nanorods, after being coated with a shell to form a p-n junction, or being imparted with a radial junction, are of interest for enhanced light harvesting in solar cells, for example. The fabrication method of such arrays is described. Modeling of the spectral properties using equivalent circuit theory is implemented to predict fabrication results and provide an intuitive approach regarding the design of these optical metamaterials with predetermined properties.

Abstract: An exemplary method of manufacturing a light-absorbing layer and a method of manufacturing a semiconductor device including the same light-absorbing layer are provided. The exemplary method includes: forming a nanoparticles film by applying a semiconductor nanoparticles solution on a substrate; thermally treating the nanoparticles film at least one time to cause adhesion among the nanoparticles; and forming a light-absorbing layer by applying a light-absorbing solution on the nanoparticles film.

Abstract: Compositions having a dispersion of nano-particles therein and methods of fabricating compositions having a dispersion of nano-particles therein are described. In an example, a method of forming a composition having a dispersion of nano-particles therein includes forming a mixture of semiconductor nano-particles and discrete prepolymer molecules. A polymer matrix is formed from the discrete prepolymer molecules. The polymer matrix includes a dispersion of the semiconductor nano-particles therein. In another example, a composition includes a medium including discrete prepolymer molecules. The medium is a liquid at 25 degrees Celsius. A plurality of semiconductor nano-particles is suspended in the medium.

Abstract: A solid-state imaging device includes a first electrode, a second electrode disposed opposing to the first electrode, and a photoelectric conversion layer, which is disposed between the first electrode and the second electrode and in which narrow gap semiconductor quantum dots are dispersed in a conductive layer, wherein one electrode of the first electrode and the second electrode is formed from a transparent electrode and the other electrode is formed from a metal electrode or a transparent electrode.

Abstract: Methods of fabricating solar cell emitter regions using silicon nano-particles and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a region of doped silicon nano-particles above a dielectric layer disposed above a surface of a substrate of the solar cell. A layer of silicon is formed on the region of doped silicon nano-particles. At least a portion of the layer of silicon is mixed with at least a portion of the region of doped silicon nano-particles to form a doped polycrystalline silicon layer disposed on the dielectric layer.

Abstract: Semiconducting quantum dots are applied to a fluid. The quantum dots are configured to absorb visible or near infrared light and re-radiate infrared energy that excites a fundamental vibration frequency of the fluid.

Abstract: Novel structures of photovoltaic cells (also treated as solar cells) are provided. The cells are based on nanometer-scaled wires, tubes, and/or rods, which are made of electronic materials covering semiconductors, insulators or metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells will have enormous applications in space, commercial, residential, and industrial applications.

Abstract: Novel structures of photovoltaic cells (also called as solar cells) are provided. The cells are based on nanoparticles or nanometer-scaled wires, tubes, and/or rods, which are made of electronic materials covering semiconductors, insulators, and may be metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells will have enormous applications such as in space, commercial, residential and industrial applications.

Abstract: Methods of fabricating solar cell emitter regions using silicon nano-particles and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a region of doped silicon nano-particles above a dielectric layer disposed above a surface of a substrate of the solar cell. A layer of silicon is formed on the region of doped silicon nano-particles. At least a portion of the layer of silicon is mixed with at least a portion of the region of doped silicon nano-particles to form a doped polycrystalline silicon layer disposed on the dielectric layer.

Abstract: A semiconductor package includes a substrate, a semiconductor die, a package body, an electromagnetic interference shield, a dielectric structure and an antenna element. The substrate comprises a grounding segment and a feeding point. The semiconductor die is disposed on the substrate. The package body encapsulates the semiconductor die. The electromagnetic interference shield is formed on the package body. The dielectric structure encapsulates the electromagnetic interference shield. The antenna element is formed on the dielectric structure and electrically connecting the grounding segment of the substrate and the feeding point.

Abstract: An apparatus comprises at least one transistor. The at least one transistor comprises a substrate, a graphene layer formed on the substrate, and first and second source/drain regions spaced apart relative to one another on the substrate. The graphene layer comprises at least a first portion and a second portion, the first portion being in contact with the first source/drain region and the second portion being in contact with the second source/drain region. One or more cuts are formed in at least one of the first and second portions of the graphene layer. The apparatus allows for lowered contact resistance in graphene/metal contacts.

Abstract: Quantum dot-sensitized solar cell and manufacturing method thereof are provided. The proposed quantum dot-sensitized solar cell has a counter electrode with a PbS thin-film layer and a polysulfide electrolyte contacting the PbS thin-film layer.

Abstract: An image sensor device includes a substrate including a light sensing region therein and a reflective structure on a first surface of the substrate over the light sensing region. An interconnection structure having a lower reflectivity than the reflective structure is provided on the first surface of the substrate adjacent to the reflective structure. A microlens is provided on a second surface of the substrate opposite the first surface. The microlens is configured to direct incident light to the light sensing region, and the reflective structure is configured to reflect portions of the incident light that pass through the light sensing region back toward the light sensing region. Related devices and fabrication methods are also discussed.

Abstract: The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

Abstract: A photoelectric conversion material is disclosed in the present invention and comprises at least a cone material. The cone material is composed of an isomer and comprises a plurality of grains. The sizes of the grains are arranged from smaller ones to larger ones along a direction. In the meantime, a method for fabricating the above photoelectric conversion material is also disclosed here. The method comprises the following steps. First, a precursor is provided. The precursor comprises at least a cone material and the cone material is a multilayer structured material, such as sodium titanate and potassium titanate, formed by stacking first materials and second materials. And then, the precursor is annealed to let the second materials leave from the cone material, and the cone material becomes the above photoelectric conversion material with a plurality of grains.

Abstract: A method for forming, on an organic semiconductor layer, an electrical contact layer comprising a metal, is disclosed. In one aspect, the method includes providing a charge collecting barrier layer on the organic semiconductor layer, providing a liquid composition comprising a precursor for the metal on the charge collecting barrier layer, and performing a sintering process. The charge collecting barrier layer is substantially impermeable to the components of the liquid composition.

Abstract: A photoelectric conversion device is provided and includes: a first electrode, a second electrode, and a photoelectric conversion layer between the first and second electrodes, the photoelectric conversion layer containing a mixture of an organic photoelectric conversion dye, a fullerene or a fullerene derivative, and a fullerene polymer; various embodiments of the device, a photosensor, an imaging device, and production methods for these devices.

Abstract: A method of texturing a surface of a crystalline silicon substrate is provided. The method includes immersing a crystalline silicon substrate into an aqueous alkaline etchant solution to form a pyramid shaped textured surface, with (111) faces exposed, on the crystalline silicon substrate. The aqueous alkaline etchant solution employed in the method of the present disclosure includes an alkaline component and a nanoparticle slurry component. Specifically, the aqueous alkaline etchant solution of the present disclosure includes 0.5 weight percent to 5 weight percent of an alkaline component and from 0.1 weight percent to 5 weight percent of a nanoparticle slurry on a dry basis.

Abstract: A method is described for producing a grating, in particular an absorption grating, having a grating constant of less than 100 ?m, by using a solution of superparamagnetic colloidal nanocrystal clusters (CNCs), a solvent liquid and a photocurable resin, with the following steps: —alignment of the CNCs in the solution by an external magnetic field, —exposure of the solution, so that the resin is cured and grating structures of an intended grating constant are formed, and —removal of the magnetic field.

Abstract: Small particle compositions including nanoparticle compositions are provided. The particle compositions, in some cases, are characterized by having an extremely small average particle size (e.g., 150 nanometers or less). The small particles may comprise a semiconductor material and/or a light-emitting material. In some embodiments, the particles may be in the form a preferred shape including platelets, amongst others. The small particle compositions may be produced in a milling process. In some embodiments, the milling process uses preferred types of grinding media to form milled particles having desired characteristics (e.g., particle size, shape). The small (or nano) particle compositions may be used in a variety of different applications including light-emitting applications. In certain applications, it may be desirable to form thin films from the small particle compositions.

Abstract: Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices.

Abstract: Novel structures of photovoltaic cells (also known as solar cells) are provided. The Cells are based on the nanometer-scaled wire, tubes, and/or rods, which are made of the electronics materials covering semiconductors, insulator or metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells can have also high radiation tolerant capability. These cells will have enormous applications such as in space, in commercial, residential and industrial applications.

Abstract: Novel structures of photovoltaic cells (also treated as solar cells) are provided. The cells are based on nanometer-scaled wires, tubes, and/or rods, which are made of electronic materials covering semiconductors, insulators or metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells will have enormous applications in space, commercial, residential, and industrial applications.

Abstract: Novel structures of photovoltaic cells (also known as solar cells) are provided. The Cells are based on the nanometer-scaled wire, tubes, and/or rods, which are made of the electronics materials covering semiconductors, insulator or metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells can have also high radiation tolerant capability. These cells will have enormous applications such as in space, in commercial, residential and industrial applications.

Abstract: A new photovoltaic (PV) cell structure, prepared on transparent substrate with transparent conductive oxide (TCO) layer and having nanorod zinc oxide layer. The cell has a thin conductive layer of doped zinc oxide deposited on the nanorod zinc oxide layer, an extremely thin blocking layer of titanium oxide or indium sulfide on the thin conductive layer, a buffer layer of indium sulfide on the extremely thin blocking layer, an absorber layer, comprising copper indium disulfide on said buffer layer and one electrode attached to the transparent conductive oxide layer and a second electrode attached to the absorber layer. Also, a method of preparing a zinc oxide nanorod PV cell entirely by chemical spray pyrolysis is disclosed. Efficiency up to 3.9% is achieved by simple continuous non-vacuum process.

Abstract: An hyperspectral imaging device comprising semiconductor nanocrystals is provided.

Abstract: A solar cell in which an n-type fine silicon particle film is formed in a lamination layer on the surface of a transparent substrate via a transparent electrode, and the n-type fine silicon particle film is covalently bound to the transparent electrode via the first organic coating formed on the surface of the transparent electrode and the second organic coating formed on the surface of the n-type fine silicon particle film and the n-type fine silicon particle film is covalently bound to the p-type fine silicon particle film via the second organic coating formed on the surface of the n-type fine silicon particle film and the third organic coating formed on the surface of the p-type fine silicon particle film.

Abstract: Provided are solar cells and methods of forming the same. The solar cell includes an anti-reflection layer on a substrate, a first electrode on the anti-reflection layer, a photo-electro conversion layer on the first electrode, and a second electrode on the photo-electro conversion layer.

Abstract: The present invention provides a method for manufacturing an electrode of a dye-sensitized solar cell using an inkjet printing process, an electrode formed thereby, and a dye-sensitized solar cell having the electrode. According to the method, a metal electrode is formed by jetting an ink solution containing nano metal powder on a transparent substrate or a transparent substrate in which a barrier layer is deposited to improve coating performance of a transparent conductive layer. A transparent conductive layer is formed on the transparent substrate on which the metal electrode is formed. The transparent conductive layer protects the metal electrode from liquid electrolyte.

Abstract: A continuous film of desired electrical characteristics is obtained by successively printing and annealing two or more dispersions of prefabricated nanoparticles.

Abstract: A method for forming copper indium gallium (sulfide) selenide (CIGS) solar cells, cadmium telluride (CdTe) solar cells, and copper zinc tin (sulfide) selenide (CZTS) solar cells using laser annealing techniques to anneal the absorber and/or the buffer layers. Laser annealing may result in better crystallinity, lower surface roughness, larger grain size, better compositional homogeneity, a decrease in recombination centers, and increased densification. Additionally, laser annealing may result in the formation of non-equilibrium phases with beneficial results.

Abstract: A solid-state imaging device includes a first electrode, a second electrode disposed opposing to the first electrode, and a photoelectric conversion layer, which is disposed between the first electrode and the second electrode and in which narrow gap semiconductor quantum dots are dispersed in a conductive layer, wherein one electrode of the first electrode and the second electrode is formed from a transparent electrode and the other electrode is formed from a metal electrode or a transparent electrode.

Abstract: An organic/inorganic hybrid photovoltaic device architecture. In some variations, power conversion efficiencies approach 1%. Some variations include an unexpected order of magnitude improvement of power conversion efficiency approaching 5%. Methods of fabricating a photovoltaic device, including depositing over a first electrode an organic semiconductor layer; depositing over the organic semiconductor layer a cross-linking ligand layer; depositing over the cross-linking ligand layer an inorganic nanocrystal layer; and depositing a second electrode over the inorganic nanocrystal layer.

Abstract: Disclosed is a method of fabricating a thin film solar cell. A separation process (‘P4’ process) of insulating a thin film solar cell from the outside is integrally performed with a transparent electrode patterning process (‘P1’ process) and a metallic electrode patterning process (‘P3’ process). This may reduce the fabrication costs and enhance spatial efficiency as the ‘P4’ process and equipment for the ‘P4’ process are not required.

Abstract: An electron multiplier for a system for detecting electromagnetic radiation or an ion flow is disclosed. The multiplier includes at least one active structure intended to receive a flow of incident electrons, and to emit in response a flow of electrons called secondary electrons. The active structure includes a substrate on which is positioned a thin nanodiamond layer formed from diamond particles the average size of which is less than or equal to about 100 nm.

Abstract: The present invention provides of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure towards the realization of photodetecting and photovoltaic devices working in the visible and the near-infrared. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, they are include only protrusions or peninsulas, and no islands. The method of producing the three-dimensional biocontinuous heterostructure relies on forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer which is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure; and forming a final coating with the second material that ensures that only the second material is contacted by subsequent layer.

Abstract: A high operating temperature split-off band infrared (SPIP) detector having a double and/or graded barrier on either side of the emitter is provided. The photodetector may include a first and second barrier and an emitter disposed between the first and second barriers so as to form a heterojunction at each interface between the emitter and the first and second barriers, respectively. The emitter may be of a first semiconductor material having a split-off response to optical signals, while one of the first or the second barriers may include a double barrier having a light-hole energy band level that is aligned with the split-off band energy level of the emitter. In addition, the remaining barrier may be graded.

Abstract: A photoelectric conversion device including a single crystal silicon substrate; a first amorphous silicon layer in contact with a surface (a light-receiving surface) of the single crystal silicon substrate; a first polarity (p-type) impurity diffusion layer in contact with the first amorphous silicon layer; a second amorphous silicon layer in contact with a back surface of the single crystal silicon substrate; and a second polarity (n-type) impurity diffusion layer in contact with the second amorphous silicon layer, in which the first and second polarity impurity diffusion layers are microcrystalline silicon layers formed under a deposition condition where a pressure in a reaction chamber is adjusted to be greater than or equal to 450 Pa and less than or equal to 10000 Pa is provided.

Abstract: The present invention relates to devices, particularly photovoltaic devices, incorporating Group IIB/VA semiconductors such phosphides, arsenides, and/or antimonides of one or more of Zn and/or Cd. In particular, the present invention relates to methodologies, resultant products, and precursors thereof in which electronic performance of the semiconductor material is improved by causing the Group IIB/VA semiconductor material to react with at least one metal-containing species (hereinafter co-reactive species) that is sufficiently co-reactive with at least one Group VA species incorporated into the Group IIB/VA semiconductor as a lattice substituent (recognizing that the same and/or another Group VA species also optionally may be incorporated into the Group IIB/VA semiconductor in other ways, e.g., as a dopant or the like).

Abstract: Proposed is the backside silicon photovoltaic cell and method for forming backside selective emitters, backside doped base contact regions, backside field-induced emitters, FSF-regions, and contacts to the functional regions of a backside solar cell by essentially electrical means and without conventional thermal diffusion and masking processes. The process includes forming conductive layers on both sides of an intermediate device structure, performing Joule heating by passing electrical current through the backside conductive layers thus forming the selective emitters, the base contact regions, and contacts to the functional regions. The obtained structure is then subjected to pulse electrical treatment by applying a voltage pulse or pulses between the front and back conductive layers to form the field-induced emitter and the field-induced FSF. After the conductive layers are removed, a final solar cell is obtained.

Abstract: The present invention involves a method of providing an integrated circuit package having a substrate with a vent opening. The integrated circuit package includes a substrate having an opening and an integrated circuit mounted to the substrate. An underfill material is dispensed between the substrate and the integrated circuit.