Abstract: In a photoelectric conversion device using a semiconductor electrode composed of semiconductor nanoparticles, the semiconductor electrode is made by coating and drying a paste containing a binder and semiconductor nanoparticles dispersed therein on a transparent conductive substrate, and pressing the paste to bond the semiconductor nanoparticles onto the transparent conductive substrate while heating it to a temperature in the range from 30° C. to the softening temperature of the transparent conductive substrate, or, if the semiconductor nanoparticles retain a sensitizing dye, to a temperature in the range from 30° C. to lower one of the softening temperature of the transparent conductive substrate and the deactivation temperature of the sensitizing dye.

Abstract: A photoelectric transducer comprises an electrode (5) on which a semiconductor layer (7) carrying a sensitizing dye is deposited. The semiconductor layer (7) contains semiconductor particles and a binder and has a porosity of 40 to 80%. A method for manufacturing a photoelectric transducer by applying a solution containing semiconductor particles and a binder to an electrode (5), drying the electrode, and pressing the electrode under a pressure of 20 to 200 Mpa so as to form a semiconductor layer (7) is also disclosed. By the method, a photoelectric transducer comprising a semiconductor layer where a conduction path of photo-excited electrons is ensured without sintering the semiconductor layer at a high temperature and which has an adhesive power adaptable to the flexibility of the base and exhibiting excellent photoelectric transducing characteristics can be provided.

Abstract: This invention is related to a micromesh material and a mono-crystal high frequency capacitor manufactured with said micromesh material as well as the producing method for the mono-crystal high frequency capacitor, i.e., disperse a colloidal material unevenly to form a sub-micrometer ceramic cell structure to get a micromesh mono-crystal material on the basis of the theory of liquid-liquid phase transformation, and produce capacitors with the obtained material to enhance the high frequency characteristics of those capacitors with the micromesh mono-crystal structure (air medium) of dielectric ceramics.

Abstract: A dye-sensitized solar cell including: a first electrode; a light absorption layer on one side of the first electrode; a second electrode facing the light absorption layer on the first electrode; and an electrolyte between the first electrode and the second electrode, wherein the light absorption layer includes: a photosensitive dye adsorbed to a porous membrane, the porous membrane including semiconductor particulates and an -M-O-M- oxide network about the semiconductor particulates, wherein the M is a transition metal.

Abstract: The present invention relates to a layered structure with laser-induced aggregation silicon nano-dots in a silicon-rich dielectric layer, where the laser-induced aggregation silicon nano-dots are formed by a laser-induced aggregation process applied to the silicon-rich dielectric layer, and applications of the same. In one embodiment, the silicon-rich dielectric layer is one of a silicon-rich oxide film having a refractive index in the range of about 1.4 to 2.3, and a silicon-rich nitride film having a refractive index in the range of about 1.7 to 2.3. The layered structure with laser-induced aggregation silicon nano-dots in a silicon-rich dielectric layer is usable in a solar cell, a photosensitive element, a touch panel, a non-volatile memory device as storage node, and a display panel, respectively.

Abstract: A silicon solar cell having a silicon substrate includes p-type and n-type emitters on a surface of the substrate, the emitters being doped nano-particles of silicon. To reduce high interface recombination at the substrate surface, the nano-particle emitters are preferably formed over a thin interfacial tunnel oxide layer on the surface of the substrate.

Abstract: A dye-sensitized solar cell includes a first electrode including a conductive transparent substrate; a light absorption layer disposed on a side of the first electrode; a second electrode facing the first electrode; and an electrolyte disposed between the first and the second electrode. The light absorption layer includes a porous membrane that includes semiconductor particulates, and a photosensitized dye adsorbed on a surface of the porous membrane. The porous membrane has a membrane density ranging from about 0.83 to about 1.97 mg/mm3, wherein the membrane density is a ratio of a porous membrane volume relative to a semiconductor particulate mass.

Abstract: The invention relates to a self-adjusting serial connection of thin layers and a method for the production thereof. The invention is characterized in that electrically conducting conductor tracks (20) are applied to a substrate (10), whereupon several main deposit layers (30, 40, 50) of conducting, semi-conducting or insulating materials are applied to the substrate. The application of the layers is carried out at various angles of incidence to the surface of the substrate.

Abstract: Switching uniformity of an optical modulation device for controlling the propagation of electromagnetic radiation is improved by use of an electrode comprising an electrically resistive layer that is transparent to the radiation. The resistive layer is preferably an innerlayer of a wide-bandgap oxide sandwiched between layers of indium tin oxide or another transparent conductor, and may be of uniform thickness, or may be graded so as to provide further improvement in the switching uniformity. The electrode may be used with electrochromic and reversible electrochemical mirror (REM) smart window devices, as well as display devices based on various technologies.

Abstract: A method of fabricating a photovoltaic solar cell is provided. A plurality of generally spherical semiconductor elements are provided. Each of the semiconductor elements has a core and an outer surface surface forming a p-n junction. An anti-reflection coating is deposited on the outer surface of each of the semiconductor elements and each of the semiconductor elements is bonded into a perforated aluminum foil array thereby providing ohmic contact to a first side of the p-n junction. The anti-reflection coating is removed from a portion of each of the semiconductor elements and then the core is exposed, thereby allowing ohmic contact to be made to a second side of the p-n junction.

Abstract: The invention relates to a method for the production of automatically adjusting serial connections of thick and/or thin layers. The method comprises the following process steps: applying electrically conductive strip conductors (20) to a substrate (10); applying a first main layer (30) at an angle a relative to the surface of the substrate; applying a second main layer which is made of granular-shaped particles (40) to the substrate (10); applying several layers in conjunction with material and process-dependent processing steps; applying a third main layer (70) at an angle ? relative to the surface of the substrate; and applying a fourth main layer (80) at an angle y relative to the surface of the substrate.

Abstract: Charge splitting networks for optoelectronic devices may be fabricated using a nanostructured porous film, e.g., of SiO2, as a template. The porous film may be fabricated using surfactant temptation techniques. Any of a variety of semiconducting materials including semiconducting metals and metal oxides (such as TiO2, CdSe, CdS, CdTe, or CuO) may be deposited into the pores of the porous template film. After deposition, the template film may be removed by controlled exposure to acid or base without disrupting the semiconducting material leaving behind a nanoscale network grid. Spaces in the network grid can then be filled with complementary semiconducting material, e.g., a semiconducting polymer or dye to create a exciton-splitting and charge transporting network with superior optoelectronic properties for an optoelectronic devices, particularly photovoltaic devices.

Abstract: A bi-layer photovoltaic cell, and method (100) of making same, with an electric field applied at the p-n heterojunction interface. The cell includes a first semiconductor layer including a binder, nanocrystals of an n-type semiconductor, and spatially bound cations and a second semiconductor layer contacting the first semiconductor layer that includes a binder, nanocrystals of a p-type semiconductor, and spatially bound anions. The cell further includes a p-n heterojunction at the contacting interface between the first and second semiconductor layers. An electric field is created by the spatially bound cations and anions that are located in the layers proximal to the p-n heterojunction. The nanocrystals are single crystals of organic semiconductors that are less than 50 nanometers in size and that comprise a majority of the volume of their respective layers. The binder is a polymer matrix, such as an epoxy. The cell includes electrical contacts abutting the semiconductor layers.

Abstract: A method and apparatus for oxidizing conductive redeposition in TMR sensors is disclosed. A TMR barrier layer is etched. Redeposition material is oxidized and the barrier is healed using an oxidizing agent selected from the group consisting of ozone and water vapor.

Abstract: A process for fabricating a polymer based circuit by the following steps. A mold of a design is formed through a lithography process. The design is transferred to a polymer substrate through a hot embossing process. A metal layer is then deposited over at least part of said design and at least one electrical lead is connected to said metal layer.

Abstract: This invention provides a method for producing semiconductor nanoparticles having a monodispersed distribution of particle sizes and the semiconductor nanoparticles produced by the same, which were insufficient in conventional reversed micelle methods. This method for producing semiconductor nanoparticles comprises steps of: forming semiconductor nanoparticles in the reaction field in the micelle or in the reversed micelle; and regulating the particle size of the semiconductor nanoparticles by size-selective photoetching, wherein the reaction field in the micelle or in the reversed micelle serves also as the dissolution field for ions that are produced when the semiconductor nanoparticles are subjected to size-selective photoetching. In this method, particle sizes of the semiconductor nanoparticles are regulated by adjusting the size of the dissolution field for ions and regulating the reactivity of size-selective photoetching.

Abstract: Nanocomposite photovoltaic devices are provided that generally include semiconductor nanocrystals as at least a portion of a photoactive layer. Photovoltaic devices and other layered devices that comprise core-shell nanostructures and/or two populations of nanostructures, where the nanostructures are not necessarily part of a nanocomposite, are also features of the invention. Varied architectures for such devices are also provided including flexible and rigid architectures, planar and non-planar architectures and the like, as are systems incorporating such devices, and methods and systems for fabricating such devices. Compositions comprising two populations of nanostructures of different materials are also a feature of the invention.

Abstract: An avalanche photodiode including a multiplication layer is provided. The multiplication layer may include a well region and a barrier region. The well region may include a material having a higher carrier ionization probability than a material used to form the barrier region.

Abstract: A solid state electric device includes templated charge-carrier-transporting channel layer interposed between a pair of conductive substrates. The templated charge-carrier-transporting channel layer includes a layer of a first charge-carrier-transporting material having one or more regions defined using templating techniques, in which a second charge-carrier-transporting material is deposited. The second charge-carrier-transporting material is distributed within the templated charge-carrier-transporting channel layer such that, predominantly, only a single contiguous part of the second charge-carrier-transporting material is interposed between the first conductive substrate and the second conductive substrate along any imaginary normal axis extending between the two conductive substrates.

Abstract: A UV detector has a UV detection thin film of coated spherical silicon nanoparticles formed upon a substrate. The detector includes structures to bias the thin film. In preferred embodiments, a thin conductor that is at least semi-transparent to UV radiation is formed over the thin film. In preferred embodiments, the UV detector is formed as a silicon based integration, upon a device quality silicon wafer.

Abstract: The objects of the present invention are to provide semiconductor layers for obtaining solar cells having a relatively high energy conversion efficiency, solar cells using the same, and their production methods and uses; all of which are solved by providing semiconductor layers that are used in solar cells and constructed by semiconductor particle groups having a plurality of peaks in particle size distribution, solar cells using the same, and their production methods and uses.

Abstract: This invention is a layered thin film semiconductor device comprising a first transparent layer; a thin, second transparent layer having a conductivity less than the first transparent layer; an n-type layer; and a p-type layer comprising one or more IIB and VIA elements. This invention is also a method for making such semiconductor device. The thin film semiconductor devices of this invention are useful for making photovoltaic devices.

Abstract: A method of fabricating a photovoltaic solar cell is provided. A plurality of generally spherical semiconductor elements are provided. Each of the semiconductor elements has a core and an outer surface surface forming a p-n junction. An anti-reflection coating is deposited on the outer surface of each of the semiconductor elements and each of the semiconductor elements is bonded into a perforated aluminum foil array thereby providing ohmic contact to a first side of the p-n junction. The anti-reflection coating is removed from a portion of each of the semiconductor elements and then the core is exposed, thereby allowing ohmic contact to be made to a second side of the p-n junction.

Abstract: This invention relates an optoelectronic material comprising a uniform medium with a controllable electric characteristic; and semiconductor ultrafine particles dispersed in the medium and having a mean particle size of 100 nm or less, and an application device using the same.

Abstract: The invention relates to a porous film for use in an electronic device, uses of such a porous film, a method of producing a porous film and a porous film produced by said method.

Abstract: There is disclosed a photoelectric conversion device comprising a substrate 1 serving as a lower electrode; first conductivity-type crystalline semiconductor particles 3 deposited on the substrate; second conductivity-type semiconductor layers 4 formed on the crystalline semiconductor particles 3; an insulator layer 2 formed among the crystalline semiconductor particles; and an upper electrode layer 5 formed on the second conductivity-type semiconductor layers 4, wherein the second conductivity-type semiconductor layers 4 each have a smaller thickness at or below an equator of each of the crystalline semiconductor particles than at a zenith region thereof, and the second conductivity-type semiconductor layers 4 include an impurity element with a concentration gradient decreasing with proximity to the crystalline semiconductor particles.

Abstract: A protective tape is applied by a tape applying mechanism on a surface of a wafer suction-supported by a chuck table. The protective tape is cut to the shape of the wafer by a cutter unit. This process is repeated a plurality of times to apply protective tape in a plurality of plies to the wafer surface. The protective tapes applied are separated successively, starting with an uppermost tape, by a separating mechanism of a tape separating apparatus.

Abstract: The present invention provides a new method for the production of inorganic semiconductor nanocrystals having a rod-like shape. More specifically the present invention provides a method of synthesizing rod shaped Group III-V semiconductor nanocrystals. The method comprises: reacting, in a high-boiling point organic solvent, a two-source precursor solution comprising at least one metal source and at least one nonmetal source, or a single-source precursor solution, with a metal catalyst or an agent capable of producing said metal catalyst, said high-boiling point organic solvent having a temperature above 200° C., thereby forming a reaction product comprising semiconductor nanocrystals of various shape; cooling the reaction product, and subsequently exposing said cooled reaction product to at least one centrifugal step so as to obtain semiconductor nanocrystals having substantially rod-like shape.

Abstract: The disclosure describes an economical and environmentally benign method to recover crystalline silicon metal kerf from wiresaw slurries and to shape and sinter said recovered crystalline silicon kerf into thin-layer PV cell configurations with enhanced surface texture for metallization and reduced optical reflection losses.

Abstract: A method of fabricating a photovoltaic solar cell is provided. A plurality of generally spherical semiconductor elements are provided. Each of the semiconductor elements has a core and an outer surface surface forming a p-n junction. An anti-reflection coating is deposited on the outer surface of each of the semiconductor elements and each of the semiconductor elements is bonded into a perforated aluminum foil array thereby providing ohmic contact to a first side of the p-n junction. The anti-reflection coating is removed from a portion of each of the semiconductor elements and then the core is exposed, thereby allowing ohmic contact to be made to a second side of the p-n junction.

Abstract: A method of producing a photovoltaic panel, including the steps of producing a light-transmitting, photovoltaic-element holding member which holds, along a reference surface, a plurality of photovoltaic elements each of which includes a P-type layer and an N-type layer, and forming, on one of opposite sides of the photovoltaic-element holding member, a first electrode which is electrically connected to the respective P-type layers of the photovoltaic elements, and a second electrode which is electrically connected to the respective N-type layers of the photovoltaic elements.

Abstract: A method of analyzing an electromagnetic interference amount of an LSI includes an equivalent impedance information calculating step of calculating and estimating equivalent impedance information based on circuit information of an LSI chip and package information of the LSI chip, and an electromagnetic interference noise calculating step of calculating an electromagnetic interference noise based on the equivalent impedance information.

Abstract: A high-speed cross-point switch is built on a preferably silicon substrate and uses bipolar transistor switching elements. Preferably, the bipolar transistors are SiGe bipolar junction transistors. Intersecting conductive input and output microstrips are preferably thinned at their intersections to reduce shunt capacitance between the coupled lines. It is also preferred that the input buffer be connected in cascode fashion with the switching transistors in order to create an amplification stage. The signal and its inverse are carried on balanced microstrip pairs in order to reduce electromagnetic field strength at the center of the balanced line pairs thereby improving isolation between two crossing balanced pairs.

Abstract: Improved photovoltaic cells utilizing for a semiconductor layer, titanium dioxide powders, consisting of porous particles, ranging in size from 0.1 to 10 microns (10−6 meters), and possess relatively high bulk density combined with high surface area.

Abstract: A photoelectric conversion device comprising at least an electron acceptive charge transfer layer, an electron donative charge transfer layer, and a light absorption layer existing between the charge transfer layers, wherein either one of the charge transfer layers comprises a semiconductor acicular crystal layer comprising an aggregate of acicular crystals or a mixture of an acicular crystal and another crystal, and a method of producing the device are disclosed. Consequently, a photoelectric conversion device being capable of smoothly carrying out transfer of electrons and having high photoelectric conversion efficiency is provided.

Abstract: A photoelectric conversion element is disposed in each of a plurality of recesses of a support. Light reflected by the inside surface of the recess shines on the photoelectric conversion element. The photoelectric conversion element has an approximately spherical shape and has the following structure. The outer surface of a center-side n-type amorphous silicon (a-Si) layer is covered with a p-type amorphous SiC (a-SiC) layer having a wider optical band gap than a-Si does, whereby a pn junction is formed. A first conductor of the support is connected to the p-type a-SiC layer of the photoelectric conversion element at the bottom or its neighborhood of the recess. A second conductor, which is insulated from the first conductor by an insulator, of the support is connected to the n-type a-Si layer of the photoelectric conversion element.

Abstract: A CMOS imager having an epitaxial layer formed below pixel sensor cells is disclosed. An epitaxial layer is formed between a semiconductor substrate and a photosensitive region to improve the cross-talk between pixel cells. The thickness of the epitaxial layer is optimized so that the collection of signal carriers by the photosensitive region is maximized.

Abstract: A solar cell has an active structure including a paint voltage source having a first paint layer structure comprising p-type pigment particles dispersed in a first-layer binder, and a second paint layer structure comprising n-type pigment particles dispersed in a second-layer binder. The second paint layer structure is in electrical contact with the first paint layer structure. The active structure further includes an electrically conductive contact structure having a first electrically conductive contact to the first paint layer structure, and a second electrically conductive contact to the second paint layer structure. At least one of the first electrically conductive contact and the second electrically conductive contact permits light to pass therethrough to the paint voltage source. A capacitive paint layer may be included to store electrical charge produced by the active structure. The active structure may be affixed to a support.

Abstract: A photovoltaic device comprising a plurality of spherical photovoltaic elements, a support and a first conductor layer and its production method are disclosed. Each of the photovoltaic elements comprises a spherical first semiconductor and a second semiconductor layer covering the surface thereof, the second semiconductor layer having an opening through which a part of the first semiconductor is exposed. An electrode is formed on each of the exposed part of the first semiconductor and the outer surface of the second semiconductor layer. The support has a plurality of recesses, each having a connection hole in its bottom, and comprises an electric insulator layer having the connection holes and a second conductor layer which is formed on the electric insulator layer except around the connection holes and which constitutes the inner surface of the recesses. The first conductor layer is disposed on the backside of the support.

Abstract: Nano photovoltaic/solar cells each include a layer of plastic, conductive paint on the layer of plastic, dielectric adhesive colloid film on the conductive paint, nano photovoltaic/solar elements in the dielectric adhesive colloid film and contacting the conductive paint, clear conductive coating on the nano photovoltaic/solar elements, and a contact transfer release sheet on the clear conductive coating. The nano photovoltaic/solar elements each include a conductive bottom, a P type layer on the conductive bottom, an N type layer on the P type layer, and a clear conductive top on the N type layer. The nano photovoltaic/solar elements may include more than one P and N junction between the conductive bottom and clear conductive top.

Abstract: Nano photovoltaic/solar cells each include a layer of plastic, conductive paint on the layer of plastic, glue on the conductive paint, nanocone photovoltaic/solar elements in the glue and contacting the conductive paint, clear conductive coating on the nanocone photovoltaic/solar elements, and a contact transfer release sheet on the clear conductive coating. The nanocone photovoltaic/solar elements each include a conductive bottom, a P type layer on the conductive bottom, an N type layer on the P type layer, and a clear conductive top on the N type layer. The nanocone photovoltaic/solar elements may include more than one P and N junction between the conductive bottom and clear conductive top.

Abstract: There is provided a photoelectric conversion device comprising a lower electrode, numerous crystalline semiconductor particles of one conductivity type deposited on the lower electrode, an insulator interposed among the crystalline semiconductor particles, and a semiconductor layer of the opposite conductivity type provided over the crystalline semiconductor particles, in which a pyramidal projection having a cross section in the shape of a trapezoid or triangle and a lateral face that faces one of the crystalline semiconductor particles is provided between the crystalline semiconductor particles. In this device, light incident on areas among the crystalline semiconductor particles is reflected or refracted by the pyramidal projection and directed into the crystalline semiconductor particles. Accordingly, this device can achieve high conversion efficiency.

Abstract: A photoelectric conversion device comprising at least an electron acceptive charge transfer layer, an electron donative charge transfer layer, and a light absorption layer existing between the charge transfer layers, wherein either one of the charge transfer layers comprises a semiconductor acicular crystal layer comprising an aggregate of acicular crystals or a mixture of an acicular crystal and another crystal, and a method of producing the device are disclosed. Consequently, a photoelectric conversion device being capable of smoothly carrying out transfer of electrons and having high photoelectric conversion efficiency is provided.

Abstract: A photoelectric conversion device comprising a particulate semiconductor layer, wherein the particulate semiconductor layer is prepared by a method comprising a step of irradiating semiconductor particles with electromagnetic wave or a step of heating semiconductor particles at a temperature of 50° C. or higher and lower than 350° C. under a pressure of 0.05 MPa or lower.

Abstract: The invention, in various embodiments, is directed to photovoltaic cells, modules and methods for making the same, wherein a plurality of discrete portions of metal foil having an interconnected nanoparticle material formed thereon are disposed, preferably as strips having a controlled size and relative spacing, between first and second flexible substrates.

Abstract: Co-sensitizers that co-adsorb with a sensitizing dye to the surface of an interconnected semiconductor oxide nanoparticle material increase the efficiency of photovoltaic cells by improving their charge transfer efficiency and reducing the back transfer of electrons from the interconnected semiconductor oxide nanoparticle material to the sensitizing dye.

Abstract: An insulator is formed on a substrate, on which numerous first conductivity-type crystalline semiconductor particles are deposited on and brought into contact with the substrate. A second conductivity-type semiconductor layer for forming a PN-junction between the layer and the crystalline semiconductor particles is formed over the crystalline semiconductor particles and the insulator. The second conductivity-type semiconductor layer comprises a semiconductor layer including a crystalline semiconductor and an amorphous semiconductor in a mixed manner.

Abstract: In a photoelectric conversion device having numerous crystalline semiconductor grains deposited on a substrate, the substrate includes an aluminum layer or an aluminum alloy layer, an intermediate layer, and a base material layer, in which the intermediate layer is arranged such that it is composed mainly of one or a plurality of elements selected from among nickel, titanium, chromium, and cobalt. With the constitution as above, it is possible to suppress reaction between the aluminum electrode layer and the base material layer, thereby maintaining the high adhesiveness of the aluminum electrode layer. A photoelectric conversion device with high reliability and high conversion efficiency is therefore realized.

Abstract: Tellurium-containing nanocrystallites are produced by injection of a precursor into a hot coordinating solvent, followed by controlled growth and annealing. Nanocrystallites may include CdTe, ZnTe, MgTe, HgTe, or alloys thereof. The nanocrystallites can photoluminesce with quantum efficiencies as high as 70%.

Abstract: A solid state photovoltaic device is formed on a substrate and includes a photoactive channel layer interposed between a pair of electrodes. The photoactive channel layer includes a first material which absorbs light and operates as a hole carrier. Within the first material are nanoparticles of a second material which operate as electron carriers. The nanoparticles are distributed within the photoactive channel layer such that, predominantly, the charge path between the two electrodes at any given location includes only a single nanocrystal. Because a majority of electrons are channeled to the electrodes via single nanocrystal conductive paths, the resulting architecture is referred to as a channel architecture.