Abstract: The current invention provides a method of fabricating quantum confinement (QC) in a solar cell that includes using atomic layer deposition (ALD) for providing at least one QC structure embedded into an intrinsic region of a p-i-n diode in the solar cell, where optical and electrical properties of the confinement structure are adjusted according to at least one dimension of the confinement structure. The QC structures can include quantum wells, quantum wires, quantum tubes, and quantum dots.

Abstract: An optoelectronic device comprises a photodetector feature, an interfacial layer disposed above at least a portion of the photodetector feature, and a vertical contact disposed on at least a portion of the interfacial layer. The photodetector feature comprises germanium and is operative to convert a light signal into an electrical signal. The interfacial layer comprises nickel. Finally, the vertical contact is operative to transmit the electrical signal from the photodetector feature.

Abstract: Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes a substrate provided with a transistor circuit, first and second interconnections separated from each other on the substrate, a first conductive-type conductive layer formed at side surfaces of the first interconnection, a second conductive-type conductive layer formed at side surfaces of the second interconnection, and an intrinsic layer formed between the first and second conductive-type conductive layers thereby forming a P-I-N structure.

Abstract: A method for fabricating a silicon nano wire, a solar cell including the silicon nano wire and a method for fabricating the solar cell. The solar cell includes a substrate, a first++-type poly-Si layer formed on the substrate, a first-type silicon nano wire layer including a first-type silicon nano wire grown from the first++-type poly-Si layer, an intrinsic layer formed on the substrate having the first-type silicon nano wire layer, and a second-type doping layer formed on the intrinsic layer.

Abstract: The present invention relates to a dye sensitized solar cell comprising a semiconductor formed of a particulate metal oxide, a dye adsorbed onto the semiconductor wherein the semiconductor interface with the dye is formed by atomic layer deposition (ALD) of a semiconductor material onto the particulate metal oxide.

Abstract: [Problems] To provide an electrode substrate for a dye-sensitized solar cell having a dye-sensitized semiconductor porous layer of a structure capable of improving conversion efficiency. [Means for Solution] The dye-sensitized semiconductor porous layer formed on the surface of the electrode substrate comprises oxide semiconductor fine particles (A) having spherical shapes and oxide semiconductor fine particles (B) having irregular shapes and particle diameters smaller than those of the spherical oxide semiconductor fine particles, has a voidage of not less than 60%, and in which a maximum peak of pore volume in the semiconductor porous layer as measured by a BET method is present in a region of pore diameters of not smaller than 30 nm.

Abstract: This invention relates to the fabrication of nanowires for electrical and electronic applications. A method of growing silicon nanowires using an alumina template is disclosed whereby the aluminum forming the alumina is also used as the catalyst for growing the silicon nanowires in a VLS (CVD) process and as the semiconductor dopant. In addition, various techniques for masking off parts of the aluminum and alumina in order to maintain electrical isolation between device layers is disclosed.

Abstract: Methods and devices are provided for improved photovoltaic devices. In one embodiment, the transparent electrode of a thin-film solar cell is replaced in part by a sheet of nanowires. One technique for use in present invention comprises forming a solar cell having: a) a thinner than usual transparent top electrode of a conductive material having a reduced thickness and b) an interconnected network of nanowires in contact with and/or coated by the top electrode. In some embodiments, the top electrode and network of nanowires increases overall power output of the solar cell compared to an otherwise identical cell using only a) a top electrode layer of the material at a thickness and light transmission equal to a combined thickness and light transmission of the top electrode and the network of nanowires, or b) an interconnected network of nanowires of thickness equal to the combined thickness and light transmission.

Abstract: A solid-state imaging device includes a first electrode, a second electrode disposed opposing to the first electrode, and a photoelectric conversion layer, which is disposed between the first electrode and the second electrode and in which narrow gap semiconductor quantum dots are dispersed in a conductive layer, wherein one electrode of the first electrode and the second electrode is formed from a transparent electrode and the other electrode is formed from a metal electrode or a transparent electrode.

Abstract: A solar panel can include a substrate with layers of droplets of different materials disposed on a surface of the substrate. An outer layer can be disposed away from the surface and can comprise a face of the solar panel. The layers can comprise a cathode electrode and an anode electrode disposed between the outer layer and the surface of the substrate. The layers can further comprise a P region and an N region. The P region can be disposed at least partially around the anode electrode. The N region can be disposed at least partially around the P region and at least partially around the cathode electrode. The P region and the N region can comprise droplets of a P material comprising P-doped semiconductor particles and an N material comprising N-doped semiconductor particles respectively.

Abstract: Embodiments of the present invention include an improved method of forming a thin film solar cell device using a plasma processing treatment between two or more deposition steps. Embodiments of the invention also generally provide a method and apparatus for forming the same. The present invention may be used to advantage to form other single junction, tandem junction, or multi-junction solar cell devices.

Abstract: The present invention provides materials, devices, and methods for generation of electricity from solar power. In one aspect, the present invention includes a solar cell, including a first conductor, a doped silicon layer in electrical communication with the first conductor, a nanodiamond layer in contact with the doped silicon layer, a doped amorphous diamond layer in contact with the nanodiamond layer, and a second conductor in electrical communication with the doped amorphous diamond layer.

Abstract: An inorganic two-phase nanowire structure including an inorganic semiconducting nanoporous charge conducting phase, and, an inorganic semiconductor nanowire array disposed within at least one of the pores of the nanoporous charge conducting phase.

Abstract: Fullerene-capped Group IV nanoparticles, materials and devices made from the nanoparticles, and methods for making the nanoparticles are provided. The fullerene-capped Group IV nanoparticles have enhanced electron transporting properties and are well-suited for use in photovoltaic, electronics, and solid-state lighting applications.

Abstract: The present invention provides a method of manufacturing a nano-array electrode with a controlled nano-structure by filling a compound having an electron-accepting structure or an electron donating structure into the fine pores of an anodic-oxide porous alumina film obtained by anodically oxidizing aluminum in electrolyte. The spaces defined between the nano-arrays formed of the compound by removing the alumina film are filled with a compound having an electron-donating structure if the nano-arrays have an electron-accepting structure and a compound having an electron-accepting structure if the nano-arrays have an electron-donating structure. A high-performance, high-efficiency photoelectric converting device comprising a nano-array electrode manufactured by the method is also disclosed.

Abstract: The present invention provides a photoelectric conversion element having a high power generation efficiency, raising no problem of corrosion, and being applicable to a substrate having a low heat resistance, as well as a method of producing the same. It is a photoelectric conversion element formed in such a manner that a reference electrode serving as a negative electrode and a counter electrode serving as a positive electrode are arranged to oppose each other. The reference electrode is constructed by forming a photocatalyst film (8) dyed with a photosensitizing dye via a transparent conductive film (2) on one surface of a transparent substrate (1). The counter electrode is constructed by disposing, on one surface of a substrate (4) for the counter electrode, a brush-shaped carbon nanotube film (5) oriented substantially perpendicularly to the substrate surface via a conductive adhesive agent layer (7) that covers the surface.

Abstract: The present invention provides a photoelectric conversion element having a high power generation efficiency, raising no problem of corrosion, and being applicable to a substrate having a low heat resistance, as well as a method of producing the same. Two sheets of photocatalyst electrodes (10) constructed by forming a photocatalyst film (8) dyed with a photosensitizing dye on one surface of a transparent substrate (1) via a transparent conductive film (2) are disposed to oppose each other. A counter electrode (11) is disposed between these electrodes. The counter electrode is constructed in such a manner that, via a conductive adhesive agent layer (7) that covers the whole of the non-opening parts on both surfaces of a counter electrode substrate (4) having a plurality of openings (9), a brush-shaped carbon nanotube (5) that is oriented substantially perpendicularly to the substrate surface is disposed.

Abstract: The copper-indium-gallium (CuInGa) alloy is in particular to be used for the production of sputter targets, tubular cathodes and similar coating material sources. It has a phase corresponding to a Cu5Zn8 prototype phase in which the lattice sites of the zinc atoms (Zn) are occupied by gallium atoms (gallium-substituted Cu5Zn8 phase) and in which indium is simultaneously introduced into the elementary cell or phase, making up a proportion of up to 26 wt %.

Abstract: An optical sensor that can be produced at a low cost from inexpensive silicon fine particles as raw materials and a method for making the optical sensor are provided. In an optical sensor 1, a layer of n-type silicon fine particles 24 coated with a coating film having a functional group is selectively fixed and bonded onto only a pattern portion of a surface of a transparent electrode 14 coated with a coating film having a first functional group, and a layer of p-type silicon fine particles 25 coated with a coating film having a third functional group is fixed and bonded thereon. The first and second functional groups and the second and third coupling groups are respectively fixed with each other via bonds formed between them and coupling reactive groups in a coupling agent.

Abstract: A solar cell coating and a method for manufacturing the solar cell coating. The solar cell coating is formed by adding a low bandgap material, a semiconductor material and a conductive polymer to a solvent or performing high-temperature milling on a mixture formed by mixing a conductive polymer material, a low bandgap material and a semiconductor material so that the solar cell coating exhibits high capability in transporting carriers effectively to transmit the electrons and holes to respective electrodes rapidly. Since the low bandgap material exhibits a small bandgap, MEG takes place to generate a plurality of electro-hole pairs when a photon is absorbed by the low bandgap material. Besides, by mixing the three materials corresponding to different conductive and valence bands respectively, a ladder structure formed by the HOMO and the LUMO corresponding to the three materials respectively will assist effective and rapid carrier transport.

Abstract: Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices.

Abstract: A dye-sensitized solar cell comprising a semiconductor electrode prepared by spraying a metal oxide nanoparticle dispersion on a conductive substrate using an electric field to form a metal oxide nanoball layer which is composed of agglomerated metal oxide nanoparticles and has a high porosity and specific surface area, exhibits improved photoelectric properties even when a gel or solid electrolyte is used.

Abstract: A system that facilitates high-speed data transfer between integrated circuit chips. The system contains a first integrated circuit chip, which includes a capacitive receiver and an electrical-to-optical transceiver. The capacitive receiver receives a capacitively coupled voltage signal transmitted from a corresponding capacitive transmitter located on a second integrated circuit chip and converts the capacitively coupled voltage signal into an electrical signal. The electrical-to-optical transceiver converts the electrical signal to an optical signal and transmits the optical signal to an optical device through optical coupling.

Abstract: A photovoltaic device includes one or more structures, an array of at least one of quantum dots and quantum dashes, at least one groove, and at least one conductor. Each of the structures comprises an intrinsic layer on one of an n type layer and a p type layer and the other one of the n type layer and the p type layer on the intrinsic layer. The array of at least one of quantum dots and quantum dashes is located in the intrinsic layer in at least one of the structures. The groove extends into at least one of the structures and the conductor is located along at least a portion of the groove.

Abstract: The present invention relates to a photodetector using nanoparticles, and more particularly, to a novel photodetector wherein surfaces of nanoparticles synthesized by a wet colloidal process are capped with organic materials which then serve as channels for electron migration, or nanoparticles, from which organic materials capped on the surfaces of nanoparticles are removed to form a close-packed particle structure, directly serve to transport electrons. In accordance with specific embodiments of the present invention, it is possible to improve performance of the photodetector and simplify the manufacturing process thereof.

Abstract: A method for manufacturing an active layer of a solar cell is disclosed, the active layer manufactured including multiple micro cavities in sub-micrometer scale, which can increase the photoelectric conversion rate of a solar cell. The method comprises following steps: providing a substrate having multiple layers of nanospheres which are formed by the aggregated nanospheres; forming at least one silicon active layer to fill the inter-gap between the nanospheres and part of the surface of the substrate; and removing the nanospheres to form an active layer having plural micro cavities on the surface of the substrate. The present invention also provides a solar cell comprising: a substrate, an active layer, a transparent top-passivation, at least one front contact pad, and at least one back contact pad. The active layer locates on a surface of the substrate and has plural micro cavities whose diameter is less than one micrometer.

Abstract: A method for fabricating an image sensor is provided. In the image sensor fabrication method, an interconnection and a dielectric interlayer are formed on a semiconductor substrate including a readout circuit. An image sensing unit is formed on a carrier substrate of one side of a dielectric layer. The carrier substrate and the dielectric interlayer are bonded to each other. The dielectric layer and the carrier substrate are removed to leave the image sensing unit on the dielectric interlayer.

Abstract: A photovoltaic cell of high efficiency may be obtained using metallic nanoparticles or nanostructures as the main light absorbing element in the photosensitive layer of the cell, which absorb the light through a surface plasmon or polaron mechanism. The cell comprises at least one photosensitive layer containing nanoparticles or nanostructures each between a n-doped and a p-doped charge transport layer, characterized in that • the nanoparticles or nanostructures are the main light absorbing element in the photosensitive layer, • the nanoparticles or nanostructures have metallic conductivity and absorb near infrared, visible and/or ultraviolet light through a surface plasmon or polaron mechanism, and • the nanoparticles or nanostructures have at least one of their dimensions of size between 0.1 and 500 nm.

Abstract: A photodetector is provided with a method for fabricating a semiconductor nanoparticle embedded Si insulating film for photo-detection applications. The method provides a bottom electrode and introduces a semiconductor precursor and hydrogen. A thin-film is deposited overlying the substrate, using a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, a semiconductor nanoparticle embedded Si insulating film is formed, where the Si insulating film includes either N or C elements. For example, the Si insulating film may be a non-stoichiometric SiOXNY thin-film, where (X+Y<2 and Y>0), or SiCX, where X<1. The semiconductor nanoparticles are either Si or Ge. Following the formation of the semiconductor nanoparticle embedded Si insulating film, an annealing process is performed.

Abstract: A hybrid photovoltaic cell module includes a substrate and a photopolymer composition disposed on the substrate. The photopolymer composition includes an organic photopolymer, a plurality of nanoparticles, and a dendrimer that disperses the nanoparticles in the composition. The dendrimer has a number average molecular weight of from 300 to 10,000 g/mol and a core having a carbon atom directly bonded to X1 and X2 and two —CH2 groups. X1 is a hydrogen atom, a functional group, or a chain including a functional group. X2 is a chain including a functional group that is the same or different from the functional groups of X1. Each —CH2 group is bonded to a chain that independently includes a functional group that is the same or different from said functional groups of X1 and X2. The module is formed using a method that includes the step of disposing the photopolymer composition on the substrate.

Abstract: An imager having a photodiode with a shallow doping profile with respect to the top surface of a substrate is disclosed. An imager with a graded pinned surface layer, self-aligned to a gate stack is provided. A photodiode with a shallow doping profile with respect to the top surface of a substrate and a graded pinned surface layer, self-aligned to a gate stack is provided. These photodiodes exhibit reduced image lag, transfer gate leakage, and photodiode dark current generation.

Abstract: A semiconductor device that attenuates light to the circuit element area is provided. The semiconductor device includes light-sensitive element area formed on substrate and a circuit element area formed on the substrate. Additionally, a multilayer wiring area is formed on circuit element area. A Tantalum film (which is generally made of tantalum or a tantalum compound) is formed on the surface of the multilayer wiring area to attenuate incident light on circuit element area.

Abstract: The invention relates to the fabrication of an electronic component having a very high integration density, notably an image sensor. The component comprises two, superposed integrated circuits, one of which one (the image sensor) is formed on the front side of a thinned first silicon substrate (12) and the other of which is produced on the front side of a second substrate (30), with an insulating planarization layer (28, 48) interposed between the front sides of the two substrates. The silicon (12) of the backside of the thinned substrate is opened locally above a first conducting area (P1) located in the thinned substrate and above a second conducting area (P2) located in the second substrate. A conducting layer portion (50), deposited on both areas, electrically connects them so as to provide the interconnection between the two circuits. The external connection pads (PL1) may also be formed in this conducting layer (50).

Abstract: An infrared detector comprises: a reflection portion transmitting far- and middle-infrared rays and reflecting near-infrared and visible rays; a photo-current generating portion having a quantum well structure in which electrons are excited by the far- and middle-infrared rays having passed through the reflection portion so as to generate photo-current; a light emitting portion having a quantum well structure into which electrons of the photo-current generated by the photo-current generating portion are injected and the electrons thus injected thereinto are recombined with holes, thus emitting near-infrared and visible rays; and a photo-detecting portion detecting the near-infrared and visible rays emitted from the light emitting portion, and detecting the near-infrared and visible rays emitted from the light emitting portion and reflected by the reflection portion.

Abstract: The invention relates to methods and devices comprising a nanostructure (2;4,4a) for improving the optical behavior of components and apparatuses and/or improving the behavior of sensors by increasing the active surface area. The nanostructure (2) is produced by means of a special RIE etching process, can be modified regarding the composition of the materials thereof, and can be provided with adequate coatings. The amount of material used for the base layer (3) can be reduced by supplying a buffer layer (406). Many applications are disclosed.

Abstract: Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes a substrate provided with a transistor circuit, first and second interconnections separated from each other on the substrate, a first conductive-type conductive layer formed at side surfaces of the first interconnection, a second conductive-type conductive layer formed at side surfaces of the second interconnection, and an intrinsic layer formed between the first and second conductive-type conductive layers thereby forming a P-I-N structure.

Abstract: A photo sensor has an insulator layer for covering a diode stack, and the insulator layer is made of photoresist to reduce a side leakage current.

Abstract: A photovoltaic device has nanoparticles sandwiched between a conductive substrate and a charge selective transport layer. Each of the nanoparticles has a ligand shell attached to the nanoparticle core. A first type of ligand is electron rich and attached to one hemisphere of the nanoparticle core, while a second type of ligand is electron poor and attached to an opposite hemisphere of the core. Consequently, the ligand shell induces an electric field within the nanoparticle, enhancing the photovoltaic effect. The arrangement of ligands types on different sides of the nanoparticle is obtained by a process involving ligand substitution after adhering the nanoparticles to the conductive substrate.

Abstract: A dye-sensitized solar cell absorbing a multi-wavelength, and a method of preparing the same are provided. In the dye-sensitized solar cell, a contacted interface structure of metal oxide nanoparticle layers of a photoelectrode and a counter electrode may be provided. The contacted interface structure may be formed by contacting the faces of the nanoparticle layers of the electrodes adsorbed by same or different dyes after forming photoabsorption layers comprising the nanoparticle layers respectively on the photoelectrode and the counter electrode.

Abstract: A method for operating a photosensitive device is provided. At first, the photosensitive device is provided, which comprising a photo sensor circuit and a photo sensor, where the photo sensor is located above and electrically coupled with the photo sensor circuit, and where the photo sensor comprises a bottom electrode; a photosensitive layer located on the bottom electrode; and a transparent electrode located on the photosensitive layer. Then, a first electrical potential is supplied to the transparent electrode, and a second electrical potential is supplied to the bottom electrode, where the first electrical potential is greater than the second electrical potential.

Abstract: The present invention provides organic optoelectronic devices including organic photovoltaic devices. In an embodiment, the present invention provides an organic optoelectronic device comprising a fiber core, a radiation transmissive first electrode surrounding the fiber core, at least one photosensitive organic layer surrounding the first electrode and electrically connected to the first electrode, and a second electrode surrounding the organic layer and electrically connected to the organic layer.

Abstract: Dual seed semiconductor photodetectors and methods to fabricate thereof are described. A dual seed semiconductor photodetector is formed directly on an insulating layer on a substrate. The dual seed semiconductor photodetector includes an optical layer formed on a dual seed semiconductor layer. The dual seed semiconductor layer includes a seed layer and a buffer layer. The seed layer of a first material is formed on an insulating layer over a substrate. The buffer layer is formed on the seed layer. Next, an optical layer of a second material is formed on the buffer layer. The buffer layer includes the first material and the second material. In one embodiment, the first material is silicon. In one embodiment, the second material is germanium.

Abstract: Disclosed are a CMOS image sensor and a manufacturing method thereof.

Abstract: InSb infrared photodiodes and sensor arrays with improved passivation layers and methods for making same are disclosed. In the method, a passivation layer of AlInSb is deposited on an n-type InSb substrate using molecular beam epitaxy before photodiode detector regions are formed in the n-type substrate. Then, a suitable P+ dopant is implanted directly through the AlInSb passivation layer to form photodiode detector regions. Next, the AlInSb passivation layer is selectively removed, exposing first regions of the InSb substrate, and gate contacts are formed in the first regions of the InSb substrate. Then, additional portions of the AlInSb passivation layer are selectively removed above the photodiode detectors exposing second regions. Next, metal contacts are formed in the second regions, and bump contacts are formed atop the metal contacts. Then, an antireflection coating is applied to a side of the substrate opposite from the side having the metal and bump contacts.

Abstract: A pinned photodiode, which is a double pinned photodiode having increased electron capacitance, and a method for forming the same are disclosed. The invention provides a pinned photodiode structure comprising a substrate base over which is a first layer of semiconductor material. There is a base layer of a first conductivity type, wherein the base layer of a first conductivity type is the substrate base or is a doped layer over the substrate base. At least one doped region of a second conductivity type is below the surface of said first layer, and extends to form a first junction with the base layer. A doped surface layer of a first conductivity type is over the at least one region of a second conductivity type and forms a second junction with said at least one region of a second conductivity type.

Abstract: A ZnX, X is S, Se, Te or a combination thereof, quantum dot preparation method. This method comprises the following steps: dissolving S powder, Se powder, Te powder or a combination thereof into an organic alkali to form a first complex solution; dissolving ZnO into an organic acid and a co-solvent to form a second complex solution; and mixing the first complex solution and the second complex solution to obtain the ZnX quantum dot.

Abstract: A radiation detector (46) includes a semiconductor layer(s) (12) formed on a substrate (14) and a scintillator (30) formed on the semiconductor layer(s) (12). The semiconductor layer(s) (12) includes an n?doped region (16) disposed adjacent to the substrate (14), and a p?doped region (18) disposed adjacent to the n?doped region (16). A trench (20) is formed within the semiconductor layer(s) (12) and around the p?doped region (18) and is filled with a material (22) that reduces pn junction curvature at the edges of the pn junction, which reduces breakdown at the edges. The scintillator (30) is disposed over and optically coupled to the p?doped regions (18). The radiation detector (46) further includes at least one conductive electrode (24) that electrically contacts the n?doped region.

Abstract: Electromagnetic radiation detecting and sensing systems using carbon nanotube fabrics and methods of making the same are provided. In certain embodiments of the invention, an electromagnetic radiation detector includes a substrate, a nanotube fabric disposed on the substrate, the nanotube fabric comprising a non-woven network of nanotubes, and first and second conductive terminals, each in electrical communication with the nanotube fabric, the first and second conductive terminals disposed in space relation to one another. Nanotube fabrics may be tuned to be sensitive to a predetermined range of electromagnetic radiation such that exposure to the electromagnetic radiation induces a change in impedance between the first and second conductive terminals. The detectors include microbolometers, themistors and resistive thermal sensors, each constructed with nanotube fabric. Nanotube fabric detector arrays may be formed for broad-range electromagnetic radiation detecting.

Abstract: The present invention relates to a photovoltaic cell, a method of manufacturing such photovoltaic cell, and to uses of such cell.

Abstract: A method of manufacturing a thermoelectric converter including supplying raw materials by mutually supplying a p-type semiconductor raw material and an n-type semiconductor raw material into a piercing hole of a honeycomb made of a non-metal inorganic material. The method also includes sintering the p-type semiconductor raw material and the n-type semiconductor raw material supplied in the honeycomb to form a p-type semiconductor and an n-type semiconductor in the piercing hole of the honeycomb, and connecting the p-type semiconductor and an n-type semiconductor formed in the piercing hole of the honeycomb to each other by an electrode.