Abstract: Semiconductor devices, methods of manufacturing thereof, and image sensor devices are disclosed. In some embodiments, a semiconductor device includes a semiconductor chip comprising an array region, a periphery region, and a through-via disposed therein. A guard structure is disposed in the semiconductor chip between the array region and the through-via or between the through-via and a portion of the periphery region. A portion of the guard structure is disposed within a substrate of the semiconductor chip.

Abstract: The manufacturing of the solar cell comprises the etching of a via hole (2) with a tapered shape such that the diameter (A) at a first side (1a) of the substrate (1), intended as a main side for capturing incident light, is larger than the diameter (B) at the second side (1b) of the substrate (1). The first doped region (3) extends to a first surface (11) in the via hole (2). The second doped region (5) is present at the second side (1b) of the substrate (1) and is suitably formed by ion implantation. The resulting solar cell has an appropriate isolation between first doped region (3) and second doped region (5) over a second surface (12) in the via hole (2) and is suitably provided with a deep junction between the first doped region (3) and dopant in the substrate (1).

Abstract: Provided are methods and systems for treating shunts on solar cell substrates. Also provided are solar cells including such substrates. A shunt detected on a substrate proximate to a metallized grid pattern is electrically disconnected from at least the bus portion of the grid, which reduces shunt's impact on performance on the solar cell. An antireflective layer may be disposed between the shunt and a portion of the grid extending over the shunt. The exposure pattern of a photoresist used to form the antireflective layer may be adjusted accordingly to achieve this result. In some embodiments, the metallized grid may be modified by adjusting the exposure pattern of a photoresist used to form this grid. The grid may be modified to avoid any contact between the grid and the shunt or to disconnect a portion of the grid contacting the shunt from the bus portion area of the grid.

Abstract: A pressed-contact type semiconductor device includes a power semiconductor element, on an upper surface of which at least a first electrode is formed and on a lower surface of which at least a second electrode is formed, lead frames which face the first electrode and the second electrode of the power semiconductor element respectively, and a clip which applies a pressure to the lead frames while the power semiconductor element is sandwiched by the lead frames, wherein a metallic porous plating part is formed on a surface which faces the first electrode or the second electrode, the surface being a surface of at least one of the lead frames.

Abstract: Disclosed is an apparatus and method for manufacturing a thin film type solar cell, which enables the enhancement of productivity, the apparatus for manufacturing a thin film type solar cell including a first electrode forming unit; a first separation part; an optoelectric conversion layer forming unit; a contact line forming unit; a printing unit; and an etching process unit, wherein the etching process unit removes the optoelectric conversion layer in a second separation part to expose the first electrode in the second separation part through a wet etching process.

Abstract: A counter electrode generally shown as 1 is formed of a conductive substrate e.g. a glass substrate 10 on which is deposited doped oxide, e.g. a fluorine doped tin oxide 20. Overlaying the fluorine layer is a layer of a metal halide, e.g. platinum chloride 30 (5 Mm H2PtCl6(H2O6) in isoproply alcohol. Metal is deposited from the solution by treating with NIR. The tin oxide layer renders the glass electrically conductive, absorbs significantly in the NIR and allows for the subsequent heating of the Pt—Cl via a heat transfer process to make the counter electrode in a very efficient manner.

Abstract: According to the embodiment, there is provided a solar cell including: a back electrode layer; a light absorbing layer on the back electrode layer; a buffer layer on the light absorbing layer; and a front electrode layer on the buffer layer, wherein the front electrode layer comprises an intrinsic region and a doping region having a conductive dopant, and a concentration of the conductive dopant is gradually lowered in upward and downward directions from an excess doping region of the doping region.

Abstract: Super-transparent electrodes for photovoltaic applications are disclosed. In some embodiments, a photovoltaic cell (1) includes an absorber material (16) capable of absorbing solar energy and converting the absorbed energy into electrical current; a window electrode (10) disposed on a light-entry surface of the absorber material (16), the window electrode (10) comprising an anti-reflective coating (ARC) layer (12) and a metallic layer (13), and a rear electrode (18) disposed on a surface of the absorber material (16) in opposing relation to the window electrode (10), wherein the rear electrode (18) in combination with the window electrode (10) are configured to collect electrical current generated in the absorber material (16).

Abstract: Provided is a semiconductor device that can suppress a leakage current more than has been achieved before. A semiconductor device 22 includes a first carrier holding layer 48, which is arranged on a lower electrode 47, is in contact with a lower electrode 47 via a first interface 49, and includes majority carriers of one type, and a second carrier holding layer 57, which is arranged on the first carrier holding layer 48, defines a second interface 58 constituting a conduction path to the first carrier holding layer 48, and includes majority carriers of the other type. The first interface 49 has its outline within the outline of the first carrier holding layer 48 when seen in a plan view in a direction that is orthogonal to a surface of the substrate, and the second interface 58 has its outline within the outline of the first carrier holding layer 48 when seen in the plan view.

Abstract: A conductive contact pattern is formed on a surface of solar cell by forming a thin conductive layer over at least one lower layer of the solar cell, and ablating a majority of the thin conductive layer using a laser beam, thereby leaving behind the conductive contact pattern. The laser has a top-hat profile, enabling precision while scanning and ablating the thin layer across the surface. Heterocontact patterns are also similarly formed.

Abstract: A back-contact solar cell and manufacturing method thereof includes steps of providing a substrate, forming a first conductive doping region and a second conductive doping region on the substrate, forming a passivation layer on the substrate to cover the first conductive doping region and the second conductive doping region, distantly disposing a plurality of first electrode paste clusters on the passivation layer, in which each first electrode paste cluster corresponds to the first conductive doping region and the second conductive doping region and includes a metal component and a glass component, enclosing the first electrode paste cluster by a plurality of second electrode pastes, and heating at least the first electrode paste clusters to an predetermined temperature so that the metal component, the metal component and the passivation layer contacted by the first electrode paste clusters forms a plurality of contacting regions.

Abstract: A method for manufacturing a solar cell, comprising the steps of: a) providing a semiconductor substrate having a light-receiving side and a back side, wherein a passivation layer is formed on the back side; b) forming a silver conductor pattern comprising a metal resinate on the back side of the semiconductor substrate; c) forming an aluminum conductor pattern on the back side of the semiconductor substrate, at least part of the aluminum conductor pattern being superimposed on at least part of the silver conductor pattern; and d) firing the silver conductor pattern and the aluminum conductor pattern at the same time, thereby forming an electric contact between the semiconductor substrate and the aluminum conductor pattern by way of fire through in a region where the silver conductor pattern and the aluminum conductor pattern are superimposed.

Abstract: In order to provide a solar cell device having increased reliability, the present invention is provided with: a substrate having a semiconductor region containing silicon at one primary surface side; a first electrode provided on the one primary surface and containing silver as the primary component; and a second electrode connected to the first electrode on the one primary surface and containing aluminum as the primary component. The first electrode is a solar cell device containing elemental tin.

Abstract: A solar cell according to an embodiment of the invention includes a substrate configured to have a plurality of via holes and a first conductive type, an emitter layer placed in the substrate and configured to have a second conductive type opposite to the first conductive type, a plurality of first electrodes electrically coupled to the emitter layer, a plurality of current collectors electrically coupled to the first electrodes through the plurality of via holes, and a plurality of second electrodes electrically coupled to the substrate. The plurality of via holes includes at least two via holes having different angles.

Abstract: The present invention relates generally to dendritic metal structures and devices including them. The present invention also relates particularly to methods for making dendritic metal structures without the use of solid electrolyte materials. In one aspect, a method for constructing a dendritic metal structure includes providing a substrate having a surface and a cathode disposed on the surface; providing an anode comprising a metal; and disposing a liquid on the surface of the substrate, such that the liquid is in electrical contact with the anode and the cathode; and then applying a bias voltage across the cathode and the anode sufficient to grow the dendritic metal structure extending from the cathode. The methods described herein can be used to grow dendritic metal electrodes, which can be useful in devices such as LEDs, touchscreens, solar cells and photodetectors.

Abstract: Metal seed layers for solar cell conductive contacts and methods of forming metal seed layers for solar cell conductive contacts are described. For example, a solar cell includes a substrate. A semiconductor region is disposed in or above the substrate. A conductive contact is disposed on the semiconductor region and includes a seed layer in contact with the semiconductor region. The seed layer is composed of aluminum (Al) and a second, different, metal.

Abstract: A device includes two BSI image sensor elements and a third element. The third element is bonded in between the two BSI image sensor elements using element level stacking methods. Each of the BSI image sensor elements includes a substrate and a metal stack disposed over a first side of the substrate. The substrate of the BSI image sensor element includes a photodiode region for accumulating an image charge in response to radiation incident upon a second side of the substrate. The third element also includes a substrate and a metal stack disposed over a first side of the substrate. The metal stacks of the two BSI image sensor elements and the third element are electrically coupled.

Abstract: Disclosed is a method for manufacturing a solar cell, which is capable of enhancing the conductivity of a molybdenum thin film by decreasing the specific resistivity and thickness of the molybdenum thin film that is a back electrode. The method for manufacturing the solar cell according to the present invention includes: a step of forming a molybdenum thin film on a substrate; and a step of performing a post-processing process on the molybdenum thin film to form a back electrode. Here, the post-processing process with respect to the molybdenum thin film may be performed by irradiating an electron beam.

Abstract: This solar cell module is provided with a plurality of solar cells, a first protective member, a second protective member, a filler, and a wiring material. The solar cells have a photoelectric conversion part, transparent conductive layers formed on a principal surface of the photoelectric conversion part, and plated electrodes of silver or copper, formed directly on the transparent conductive layers.

Abstract: A solar cell can include a substrate and a semiconductor region disposed in or above the substrate. The solar cell can also include a conductive contact disposed on the semiconductor region with the conductive contact including deformed conductive particles.

Abstract: In general, the invention relates to electro-conductive pastes with Ag-metal-oxide as additives and solar cells with high Ohmic sheet resistance, preferably photovoltaic solar cells. More specifically, the invention relates to solar cell precursors, processes for preparation of solar cells, solar cells and solar modules. The invention relates to an electro-conductive paste comprising the following paste constituents: a. At least 70 wt. % Ag particles, based on the paste, b. An organic vehicle, c. A glass, d. An Ag-metal-oxide, comprising Ag, a metal M or semiconductor element different from Ag, and oxygen.

Abstract: Forming a metal layer on a solar cell. Forming a metal layer can include placing a patterned metal foil on the solar cell, where the patterned metal foil includes a positive busbar, a negative busbar, a positive contact finger extending from the positive busbar, a negative contact finger extending from the negative busbar, a metal strip, and one or more tabs. The positive and negative busbars and the positive and negative contact fingers can be connected to one another by the metal strip and tabs. Forming the metal layer can further include coupling the patterned metal foil to the solar cell and removing the metal strip and tabs. Removing the metal strip and tabs can separate the positive and negative busbars and contact fingers.

Abstract: A solar cell structure includes P-type and N-type doped regions. A dielectric spacer is formed on a surface of the solar cell structure. A metal layer is formed on the dielectric spacer and on the surface of the solar cell structure that is exposed by the dielectric spacer. A metal foil is placed on the metal layer. A laser beam is used to weld the metal foil to the metal layer. A laser beam is also used to pattern the metal foil. The laser beam ablates portions of the metal foil and the metal layer that are over the dielectric spacer. The laser ablation of the metal foil cuts the metal foil into separate P-type and N-type metal fingers.

Abstract: A solar cell can include a substrate and a semiconductor region disposed in or above the substrate. The solar cell can also include a conductive contact disposed on the semiconductor region with the conductive contact including a paste, a first metal, and a first conductive portion that includes a conductive alloy formed from the first metal at an interface of the substrate and the semiconductor region.

Abstract: Solar cell contact structures formed from metal paste and methods of forming solar cell contact structures from metal paste are described. In a first example, a solar cell includes a substrate. A semiconductor region is disposed in or above the substrate. A contact structure is disposed on the semiconductor region and includes a conductive layer in contact with the semiconductor region. The conductive layer includes a matrix binder having aluminum/silicon (Al/Si) particles and an inert filler material dispersed therein. In a second example, a solar cell includes a substrate. A semiconductor region is disposed in or above the substrate. A contact structure is disposed on the semiconductor region and includes a conductive layer in contact with the semiconductor region. The conductive layer includes an agent for increasing a hydrophobic characteristic of the conductive layer.

Abstract: A photoelectric conversion element includes an insulating film, a first electrode, a light receiving layer, and a second electrode. The first electrode is formed on the insulating film and is made of titanium oxynitride. The light receiving layer is formed on the first electrode and includes an organic material. A composition of the first electrode just before forming the light receiving layer meets (1) a requirement that an amount of oxygen contained in the whole of the first electrode is 75 atm % or more of an amount of titanium, or (2) a requirement that in a range of from the substrate side of the first electrode to 10 nm or a range of from the substrate side of the first electrode to ? of the thickness of the first electrode, an amount of oxygen is 40 atm % or more of an amount of titanium.

Abstract: Methods of doping a solar cell, particularly a point contact solar cell, are disclosed. One surface of a solar cell may require portions to be n-doped, while other portions are p-doped. At least one lithography step can be eliminated by the use of a blanket doping of species having one conductivity and a patterned counterdoping process of species having the opposite conductivity. The areas doped during the patterned implant receive a sufficient dose so as to completely reverse the effect of the blanket doping and achieve a conductivity that is opposite the blanket doping. In some embodiments, counterdoped lines are also used to reduce lateral series resistance of the majority carriers.

Abstract: A conductive paste composition contains a source of an electrically conductive metal, a lead-tellurium-based oxide, a discrete oxide of an adhesion promoting element, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the paste composition on a semiconductor substrate (e.g., by screen printing) and firing the paste to remove the organic vehicle and sinter the metal and lead-tellurium-based oxide.

Abstract: In various embodiments, photovoltaic devices incorporate discontinuous passivation layers (i) disposed between a thin-film absorber layer and a partner layer, (ii) disposed between the partner layer and a front contact layer, and/or (iii) disposed between a back contact layer and the thin-film absorber layer.

Abstract: Methods and devices are disclosed herein that generally involve solar cells having an anode formed in a core/shell/shell construction. The core is formed from oxide nanoparticles, which are then coated with a catalyst and a photoactive semiconductor. This construction, which can be combined with other innovations described herein, results in an inexpensive but efficient solar cell.

Abstract: A photoelectric conversion device with improved electric characteristics is provided. The photoelectric conversion device has a structure in which a window layer is formed by a stack of a first silicon semiconductor layer and a second silicon semiconductor layer, and the second silicon semiconductor layer has high carrier concentration than the first silicon semiconductor layer and has an opening. Light irradiation is performed on the first silicon semiconductor layer through the opening without passing through the second silicon semiconductor layer; thus, light absorption loss in the window layer can be reduced.

Abstract: A photovoltaic device can include an intrinsic metal layer adjacent to a semiconductor absorber layer; and a doped metal contact layer adjacent to the intrinsic metal layer, where the doped metal contact layer includes a metal base material and a dopant.

Abstract: A method for forming a solar cell with selective emitters is disclosed, including selectively removing a portion of a barrier layer on a substrate to form an opening, performing a texture etching process to the substrate to form a second texture structure in a second region under the opening of the barrier layer, wherein the substrate surface in the first region does not change from the first texture structure. The first texture structure and the second texture structure include a plurality of protruding portions and recessing portions. The distance between neighboring protruding portions of the first texture structure is L1, the distance between neighboring protruding portions of the second texture structure is L2, and L1 is 2˜20 times that of L2. The method for forming a solar cell with selective emitters further comprises removing the barrier layer and performing a doping process.

Abstract: A method of forming a multijunction solar cell including an upper subcell, a middle subcell, and a lower subcell by providing a substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a graded interlayer over the second subcell, the graded interlayer having a third band gap greater than the second band gap; forming a third solar subcell over the graded interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell; and forming a contact composed of a sequence of layers over the first subcell at a temperature of 280° C. or less and having a contact resistance of less than 5×10?4 ohms-cm2.

Abstract: An electroconductive paste composition for use in forming backside soldering pads on a solar cell including metallic particles, glass frit including Bi2O3, Al2O3, SiO2, B2O3 and at least one of Li2O or Li3PO4, and an organic vehicle is provided. The invention also provides a solar cell comprising a silicon wafer having a front side and a backside, and a soldering pad formed on the silicon wafer produced from an electroconductive paste according to the invention. The invention further provides a solar cell module comprising electrically interconnected solar cells according to the invention. A method of producing of a solar cell, comprising the steps of providing a silicon wafer having a front side and a backside, applying an electroconductive paste composition according to the invention onto the backside of the silicon wafer, and firing the silicon wafer according to an appropriate profile, is also provided.

Abstract: A method for forming contacts on a photovoltaic device includes forming a heterojunction cell including a substrate, a passivation layer and a doped layer and forming a transparent conductor on the cell. A patterned barrier layer is formed on the transparent conductor and has openings therein wherein the transparent conductor is exposed through the openings in the barrier layer. A conductive contact is grown through the openings in the patterned barrier layer by a selective plating process.

Abstract: A solar cell includes a photoelectric conversion section having first and second principal surfaces, and a collecting electrode formed on the first principal surface. The collecting electrode includes first and second electroconductive layers in this order from the photoelectric conversion section side, and includes an insulating layer between the first and second electroconductive layers. The insulating layer is provided with an opening, and the first and second electroconductive are in conduction with each other via the opening provided in the insulating layer. The solar cell has, on the first principal surface, the second principal surface or a side surface of the photoelectric conversion section, an insulating region freed of a short circuit of front and back sides of the photoelectric conversion section, and the surface of the insulating region is at least partially covered with the insulating layer.

Abstract: A photovoltaic cell including: (a) a housing including an at least partially transparent cell wall having an interior surface; (b) an electrolyte, containing an iodide based species; (c) a transparent electrically conductive coating disposed on the interior surface; (d) an anode disposed on the conductive coating, the anode including: (i) a porous film containing titania, the porous film adapted to make intimate contact with the iodide based species, and (ii) a dye, absorbed on a surface of the porous film, the dye and the porous film adapted to convert photons to electrons; (e) a cathode disposed on an interior surface of the housing; (f) electrically-conductive metallic wires, disposed within the cell, and electrically contacting the anode and the coating, and (g) a second electrically conductive coating including an inorganic binder and an inorganic electrically conductive filler, the second coating bridging between each of the wires and the transparent coating.

Abstract: A photovoltaic cell manufacturing method is disclosed. Methods include manufacturing a photovoltaic cell having a selective emitter and buried contact (electrode) structure utilizing nanoimprint technology. The methods include providing a semiconductor substrate having a first surface and a second surface opposite the first surface; forming a first doped region in the semiconductor substrate adjacent to the first surface; performing a nanoimprint process and an etching process to form a trench in the semiconductor substrate, the trench extending into the semiconductor substrate from the first surface; forming a second doped region in the semiconductor substrate within the trench, the second doped region having a greater doping concentration than the first doped region; and filling the trench with a conductive material. The nanoimprint process uses a mold to define a location of an electrode line layout.

Abstract: A back-side illuminated image sensor formed from a thinned semiconductor substrate, wherein: a transparent conductive electrode, insulated from the substrate by an insulating layer, extends over the entire rear surface of the substrate; and conductive regions, insulated from the substrate by an insulating coating, extend perpendicularly from the front surface of the substrate to the electrode.

Abstract: According to one embodiment, there is provided a method for manufacturing a photovoltaic cell. The method includes forming a structure including a pair of electrodes which are arranged apart from each other, and a hetero-junction type photoelectric conversion layer interposed between the electrodes and containing a p-type semiconductor and a n-type semiconductor, and annealing the photoelectric conversion layer thermally while applying an AC voltage having a frequency of 0.01 kHz or more and less than 1 kHz to control a mixed state of the p-type semiconductor and n-type semiconductor in the photoelectric conversion layer.

Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell includes a substrate of a first conductive type, an emitter layer of a second conductive type opposite the first conductive type, a plurality of first electrodes connected to the emitter layer, at least one first current collector connected to the plurality of first electrodes, and a second electrode connected to the substrate. The emitter layer forms a p-n junction along with the substrate. Each of the plurality of first electrodes has a multi-layered structure, and the at least one first current collector has a single-layered structure.

Abstract: A method for fabricating a solar cell element, the method comprising a step (a) of preparing a laminate and a chamber, a step (b) of bringing the laminate into contact with the aqueous solution in such a manner that the second surface is immersed in the aqueous solution after the step (a); a step (c) of applying a voltage difference between an anode electrode and the laminate under an atmosphere of the inert gas to form a Zn layer on the second surface after the step (b); and a step (d) of exposing the Zn layer to oxygen so as to convert the Zn layer into a ZnO crystalline layer after the step (c).

Abstract: Included are a semiconductor substrate including, on one surface side, a dopant diffusion layer, a light-receiving surface side electrode electrically connected to the dopant diffusion layer and formed on the one surface side of the semiconductor substrate, and a rear surface side electrode formed on the other surface side of the semiconductor substrate. A first unevenness structure including first projected sections each having a square pyramid shape in a light-receiving surface side electrode formation region in which the light-receiving surface side electrode is formed on the one surface side of the semiconductor substrate including the dopant diffusion layer. A second unevenness structure including second projected sections each having a square pyramid shape larger than the first projected sections in a region where the light-receiving surface side electrode is not formed on the one surface side of the semiconductor substrate including the dopant diffusion layer.

Abstract: A method for fabricating a silicon-doped or boron-doped aluminum electrode is revealed. Aluminum target or aluminum paste prepared by selectively doped with silicon and/or boron is arranged at a silicon wafer with a passivation layer by physical deposition or screen printing. Then the doped aluminum layer is melted in linear or dot pattern to pass through the passivation layer and contact with the silicon wafer. Thus contact resistance between an aluminum back electrode and the silicon wafer of crystalline silicon solar cells is reduced and acceptor concentration on a surface layer of the silicon wafer is increased. Therefore the process speed is faster and the energy conversion efficiency of the solar cell is improved.

Abstract: A method of processing a thin-film absorber material with enhanced photovoltaic efficiency. The method includes providing a soda-lime glass substrate having a surface region and forming a barrier material overlying the surface region, followed by formation of a stack structure including a first thickness of a first precursor, a second thickness of a second precursor, and a third thickness of a third precursor. The first thickness of the first precursor is sputtered with a first target device including a first mixture of copper, gallium, and a first sodium species. The method further includes subjecting the soda-lime glass substrate having the stack structure in a thermal treatment process with at least H2Se gas species at a temperature above 400° C. to cause formation of an absorber material. Moreover, the method includes transferring a second sodium species from a portion of the soda-lime glass substrate via gas-phase diffusion during the thermal treatment process.

Abstract: A method for fabricating a photovoltaic device includes forming a first contact on a crystalline substrate, by epitaxially growing a first doped layer having a doping concentration of 1019 cm?3 or greater, a dislocation density of 105 cm?2 or smaller, a hydrogen content of 0.1 atomic percent or smaller, and a thickness configured to reduce Auger recombination in the epitaxially grown doped layer. A first passivation layer is formed on the first doped layer. A second contact is formed on the crystalline substrate on a side opposite the first contact by epitaxially growing a second doped layer having a doping concentration of 1019 cm?3 or greater, a dislocation density of 105 cm?2 or smaller, a hydrogen content of 0.1 atomic percent or smaller and a thickness configured to reduce Auger recombination in the second epitaxially grown doped layer. A second passivation layer is formed on the second doped layer.

Abstract: A multilayer back electrode for a photovoltaic thin-film solar cell includes, in the following sequence: at least one bulk back electrode layer containing at least one of V, Mn, Cr, Mo, Co, Zr, Ta, Nb, and W; at least one conductive barrier layer; and at least one ohmic contact layer containing (i) at least one first ply adjacent to the at least one conductive barrier layer, the at least one first ply containing at least one of Mo, W, Ta, Nb, Zr and Co, and (ii) at least one second ply not adjacent to the at least one barrier layer, the at least one second ply containing at least one metal chalcogenide.

Abstract: A method of manufacturing a semiconductor device provided with an interlayer insulating film formed on a semiconductor substrate, and a plurality of wiring layers formed on the interlayer insulating film. The method includes forming of a first wiring layer closest to the semiconductor substrate among the plurality of wiring layers, and forming of an alloy of a titanium layer and a metal layer by heating treatment. The forming of the first wiring layer includes: forming of a titanium layer on an interlayer insulating film; forming of a metal layer containing a metal capable of forming an alloy with titanium in the titanium layer; forming of an orientation layer on the metal layer; and forming of an aluminum layer on the orientation layer.

Abstract: A solar cell segment includes a substrate defining a rear side including a number of base doped regions and emitter doped regions. A dielectric layer and at least one metallizing layer are disposed on the rear side of the substrate. The at least one metallizing layer is structured in an interdigital comb-shaped contact deck arrangement and defines base contact decks for a number of base doped regions and emitter contact decks for a number of base doped regions. The at least one metallization layer is disposed between the rear side of the substrate and the dielectric layer. At least one first row of first contact openings is formed in the dielectric layer lying in a region of the base contact decks and at least one second row of second contact openings is formed in the dielectric layer lying in a region of the emitter contact decks.